CN105734619A - Electric casting mold and preparation method thereof - Google Patents
Electric casting mold and preparation method thereof Download PDFInfo
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- CN105734619A CN105734619A CN201610122272.8A CN201610122272A CN105734619A CN 105734619 A CN105734619 A CN 105734619A CN 201610122272 A CN201610122272 A CN 201610122272A CN 105734619 A CN105734619 A CN 105734619A
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- photoresist
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- electroforming
- mould
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
Abstract
The invention relates to a preparation method of an electric casting mode. In an embodiment, the method comprises the following steps: a negative mask plate is designed according to a pattern of microfluidics design; negative photoresist is rotationally coated on a substrate; the photoresist on the substrate is exposed by using the negative mask plate; the exposed photoresist is developed to obtain a photoresist pattern; the surface metallization treatment is performed for the photoresist pattern; the surface-metallized photoresist pattern is electrically cast to obtain the electric casting mold; and the electric casting mold is dipped in alkali solution to obtain a photoresist-removed electric casting mold. The method mainly makes an improvement on stripping between the photoresist and the electric casting mold. The method can quickly and efficiently prepare a metal mold with a smooth surface and no damage, improves the stripping efficiency of the electric casting mold and the photoresist to a greater extent, and improves the quality of the electric casting mold.
Description
Technical field
The present invention relates to micro-fluidic chip preparing technical field, particularly relate to a kind of electroforming mould and preparation method thereof.
Background technology
Photoetching technique is widely used in the preparation field of micro-fluidic chip, and the quality of photoetching directly influences the quality of preparation metal positive and micro-fluidic chip thereof.The preparation method optimizing and revising mould plays vital effect to improving product quality.
SU-8 photoresist overcomes normal light photoresist and adopts the problem that UV photoetching depth-to-width ratio is not enough, is quite suitable for preparing high aspect ratio microstructures, and therefore SU-8 glue is a kind of negativity, epoxide resin type, nearultraviolet rays photoresist.Its absorbance in black light (365nm-400nm) scope is very low, and the light exposure uniformity that whole photoresist layer obtains, and can obtain the thick film figure with vertical sidewall and high-aspect-ratio;It also has good mechanical property, resistance to chemical corrosion and heat stability;SU-8 cross-links after being subject to ultraviolet radiation, is a kind of chemical amplification negative photoresist, it is possible to form the baroque figures such as step;And SU-8 glue is non-conductive, can use directly as insulator when plating.Owing to it has more advantages, SU-8 glue is just applied to the fields such as MFMS, chip package and micro Process gradually.Directly adopt SU-8 photoresist a to prepare new technique that the high micro structure of depth-to-width ratio and micro-part are micro Process fields.
The negative photoresists such as SU-8 are widely used in PDMS micro-fluidic chip and the preparation field of micro-fluidic chip metal die thereof.Using SU-8 photoetching, by magnetic control surface metalation, then utilize electrocasting machine to prepare the metal of available injection moulding, this technique is the technique that fast injection molding prepares that biochip is conventional.But the exposure of SU-8 photoresist is thick through electroforming, together with adhering well to electroforming mould, it is difficult to peel off by conventional method.
SU-8 has certain mechanical strength, it is possible to as portioned product device.Be exposed development SU-8 photoresist can strong acid, the corrosion of highly basic and heatproof up to 200 DEG C.Generally removing SU-8 photoresist and need Piranha solution (concentrated sulphuric acid+hydrogen peroxide), be i.e. " tiger fish " solution, this solution is extremely dangerous, and metal also has very strong corrosivity.
Being exposed the SU-8 photoresist of development, make its surface metalation by magnetron sputtering, the negative electrode as electrocasting machine puts into electroforming pond.Through long electroforming, it is possible to prepare for the identical metal die of SU-8 photoengraving pattern, for instance nickel mould.But by long electroforming, nickel mould and SU-8 photoresist have very strong adhesion to make SU-8 glued membrane and very firm the sticking together of nickel.If by " tiger fish " solution soaking, SU-8 photoresist can be removed, but the corrosion that nickel mould also can be very serious;Have tried to come the nickel mould that ashing electroforming is thick, the vestige after nickel die surface so can be made to leave a lot of SU-8 photoresist ashing with high temperature.
Summary of the invention
The purpose of the present invention is for the deficiencies in the prior art, it is proposed that the preparation method of a kind of electroforming mould, and the method is primarily directed to negative photoresist and how electroforming mould is peeled off and improved.Any surface finish, undamaged metal die can be prepared fast and efficiently by the method, improve the charge stripping efficiency of electroforming mould and photoresist and the quality of electroforming mould to a great extent.
First aspect, the preparation method that the invention provides a kind of electroforming mould, described method includes: the figure according to micro-fluidic design, designs negative mask plate;Spin coating negative photoresist on substrate;Described negative mask plate is utilized to be exposed the photoresist on described substrate processing;Photoresist after described exposure-processed is carried out development treatment, obtains photoetching offset plate figure;Described photoetching offset plate figure is carried out surface metalation process;The litho pattern of described surface metalation is carried out electroforming process, obtains electroforming mould;Described electroforming mould is soaked in alkaline solution, it is thus achieved that remove the electroforming mould of photoresist.
Preferably, before being exposed the photoresist on described substrate processing, also include: the photoresist on described substrate is carried out baking process.
Preferably, before the photoresist after described exposure-processed is carried out development treatment, also include: the photoresist after described exposure-processed is carried out baking process.
Preferably, described described photoetching offset plate figure is carried out surface metalation process, including: described photoetching offset plate figure is first carried out aluminum thin film sputter, forms sacrifice layer;Then nickel thin film sputter is carried out.
Preferably, described alkaline solution is sodium hydroxide solution, and its concentration is 8-20%.
Preferably, described substrate is silicon materials.
Preferably, the draft angle of described electroforming mould is not more than 90 degree.
Second aspect, the invention provides electroforming mould prepared by the preparation method of a kind of electroforming mould as described in above-mentioned first aspect.
The invention provides a kind of electroforming mould and preparation method thereof, it is primarily directed to negative photoresist and how electroforming mould is peeled off and improved, photoetching offset plate figure is being carried out in surface metalation processing procedure, first described photoetching offset plate figure is first being carried out aluminum thin film sputter, forming sacrifice layer;Then nickel thin film sputter is carried out.Finally utilize aluminum sacrificial layer to be soluble in alkaline solution and electroforming mould uncorroded principle in alkaline solution, the mould after electroforming is placed in alkaline solution and soaks, the ganoid electroforming mould of final acquisition.
Accompanying drawing explanation
The preparation method flow chart of the electroforming mould that Fig. 1 provides for one embodiment of the invention;
Detailed description of the invention
Below by drawings and Examples, the present invention is further detailed, it should be appreciated that these embodiments are only used for the use being described in more detail, and should not be construed as with limiting the present invention in any form, be namely not intended to limit the scope of the invention.
Material and test method that this part is used during the present invention is tested carry out general description.Although for realize many materials that the object of the invention uses and operational approach is to it is known in the art that but the present invention remains in this to be described in detail as far as possible.It will be apparent to those skilled in the art that within a context, if not specified, material therefor of the present invention and operational approach are well known in the art.
Embodiment one
The preparation method flow chart of the electroforming mould that Fig. 1 provides for the embodiment of the present invention, as described in Figure 1, described method includes:
S110, the figure according to micro-fluidic design, designs negative mask plate.
Concrete, according to micro-fluidic design figure, designs one piece of negativity mask version, standby.
S120, spin coating negative photoresist on substrate.
Photoresist is the key intermediary that the micro structure on mask is accurately transferred to substrate by photoetching technique.On substrate, the detailed process of spin coating photoresist is to be fixed on a spinstand by clean substrate, first carries out spin coating, then carries out whirl coating.Preferably, negative photoresist is SU-8 sequence of photolithography glue.
Specifically, substrate can be glass, metal or the surface glass with metal.Because silicon is relatively good with SU-8 sequence of photolithography adhesion, it is therefore preferable that silicon chip is substrate.
In actual mechanical process, the degree of depth of first design chips groove, select the model of required SU-8 photoresist, then pass through the thickness that spin processes and whirl coating technique are adjusted obtaining required photoresist.
S130, utilizes negative mask plate to be exposed the photoresist on described substrate processing.
Preferably, for making other organic solvents in photoresist volatilize, before being exposed the photoresist on substrate processing, it is possible to first the photoresist on substrate is carried out baking process, namely soft baking processes.Not only can improve the ratio of the light sensation factor, and photoresist mummification can be made, not viscous mask plate.
Baking process after photoresist, the mask plate of preparation is placed above in step S110, under certain light intensity, processes a period of time, namely planless region to be exposed, have the region of figure to want printing opacity.Acting as of described exposure: by the graph copying on described negative mask plate to described photoresist.In actual mechanical process, time of exposure and the model of photoresist, thickness, light intensity etc. have direct relation, and aforesaid baking process also has certain relation.
S140, carries out development treatment to the photoresist after exposure-processed, obtains photoetching offset plate figure.
Preferably, by the photoresist after exposure-processed, define acid catalyst, for accelerating the micromolecular crosslinking of photoresist, thus the development of not developed liquid, it is possible to before development treatment, first the photoresist after exposure-processed being carried out baking process, in namely, baking processes.Middle baking technique need according to the thickness of model with photoresist and photoresist thereof be adjusted.
Specifically, by the photoresist after exposure by " shower " of required developer solution or immersion, photoetching offset plate figure is finally obtained.Developing time is determined according to thickness and the exposure technology of photoresist.Preferably, photoresist developing, it is necessary to hocket between developer solution and aqueous isopropanol, i.e. special developer solution " shower " or immersion with photoresist, and clean in isopropanol, the effect according to development, then decide whether to " shower " or immersion in developer solution again.
S150, carries out surface metalation process to photoetching offset plate figure.
The purpose of metalized is to make photoresist have electric conductivity, specifically, photoetching offset plate figure is carried out surface metalation process, includes two steps altogether, and first photoetching offset plate figure first carries out aluminum thin film sputter, forms sacrifice layer;Then nickel thin film sputter is carried out, it is thus achieved that the photoetching offset plate figure of surface metalation.Preferably, the thickness of aluminum thin film is about 1/3rd of thickness of metal film.
S160, carries out electroforming process to the metallized litho pattern in surface, obtains electroforming mould.
The metallized photoetching offset plate figure in surface being carried out electroformed nickel process, specifically, is put in nickeliferous electroforming solution by the photoetching offset plate figure of surface metalation, as negative electrode, electroforming processes 72h, it is thus achieved that with the nickel mould of photoresist.Preferably, the pH value of electroforming solution is about 4, and temperature is at about 50 DEG C.
S170, soaks electroforming mould in alkaline solution, it is thus achieved that remove the electroforming mould of photoresist.
Electroforming is good and with photoresist nickel mould is placed in alkaline solution and soaks, the final nickel mould obtaining removal photoresist.Preferably, alkaline solution is sodium hydroxide solution, it is further preferred that the concentration of Strong oxdiative sodium solution is between 8~20%.
The preparation method of the electroforming mould that the present embodiment provides, it is primarily directed to negative photoresist and how electroforming mould is peeled off and improved, photoetching offset plate figure is being carried out in surface metalation processing links, introduce aluminum thin film as sacrifice layer, then aluminum thin film is utilized to be soluble in alkaline solution, but electroformed nickel mould is uncorroded principle in alkaline solution, nickel mould good for electroforming is placed in alkaline solution and soaks, quickly, remove photoresist efficiently, prepare the undamaged metal die of any surface finish, improve the charge stripping efficiency of electroforming mould and photoresist to a great extent, and the quality of electroforming mould.
The technical scheme provided for a better understanding of the present invention, the following preparation method with instantiation explanation application the above embodiment of the present invention offer prepares the detailed process of nickel mould.
Embodiment two
A kind of preparation method of electroformed nickel mould, step is as follows:
1, the figure according to micro-fluidic design, designs one piece of negativity mask version, standby.
2, based on the chip that projected depth is 60 μm, being the photoresist of SU-83050 model with photoresist, first carry out spin coating: spin coating speed is 500rad/s on a spinstand by fixing for clean silicon chip, acceleration is 100rad/s2, spin coating 15s;Then carrying out brush coating: whirl coating speed is 3000rad/s, acceleration is 500rad/s2, whirl coating 30s.
3, carry out soft baking process: first at 65 DEG C, toast 1min, rise to 95 DEG C then as hot plate, toast 9min, be finally cooled to room temperature with hot plate.
It is exposed processing: by the Hg lamp of 1000W, add 405nm filter lens, be exposed with 365nm light, can force density be 20mW/cm2Exposure 20s.
4, carry out middle baking process: first at 65 DEG C, toast 1min, rise to 95 DEG C then as hot plate, toast 4min, be finally cooled to room temperature with hot plate.
Carry out development treatment: be placed on by the silicon chip processed by middle baking in the container filling SU-8 development, carry out soaking development.In development process, it is necessary at developer solution and isopropanol alternate immersion.
5, photoetching offset plate figure first carries out aluminum thin film sputter, sputter 80nm, forms sacrifice layer;Then nickel thin film sputter, sputter 150nm are carried out, it is thus achieved that the SU-8 photoetching offset plate figure of surface metalation
6, being put in nickeliferous electroforming solution by the SU-8 photoetching offset plate figure of surface metalation, as negative electrode, electroforming processes, and forming diameter is 160nm, and thickness is the metal nickel mould of 300 μm.Process conditions are: the pH=4 of electroforming solution, and temperature is 50 DEG C, electric current density 50AH, electroforming time 72h.
7, electroforming is good and with SU-8 photoresist metal nickel mould is placed in the Strong oxdiative sodium solution that concentration is 15% and soaks, it is thus achieved that remove photoresist and smooth surface, undamaged metal nickel mould.
Metal nickel mould prepared by the present embodiment, in preparation process, how to peel off improved mainly for being primarily directed to SU-8 photoresist and electroforming mould, namely photoetching offset plate figure is being carried out in surface metalation processing links, first described photoetching offset plate figure is first carried out aluminum thin film sputter, forms sacrifice layer;Then nickel thin film sputter is carried out.Aluminum sacrificial layer is finally utilized to be soluble in alkaline solution, but electroforming mould is uncorroded principle in alkaline solution, mould after electroforming is placed in alkaline solution and soaks, it is possible to rapidly remove the SU-8 photoresist of electroforming die surface, the final electroformed nickel mould obtaining removal photoresist.This metal nickel mould any surface finish, not damaged.Namely the preparation method utilizing the embodiment of the present invention, by materials such as SU-8 negative photoresist, aluminum, nickel, by equipment such as photoetching, magnetic control, high accuracy electroforming, it is possible to prepare the Ni-based micro-fluidic injection mold of high accuracy.
Above example be premised on technical solution of the present invention under, what provide implements in detail material component and concrete preparation process, but protection scope of the present invention is not limited to above-described embodiment.
Although it should be noted that present invention has been a degree of description, it will be apparent that, without departing from the spirit and scope of the present invention when, can carry out the suitable change of each condition.Can be understood as and the invention is not restricted to described embodiment, and be attributed to scope of the claims, it includes the equivalent replacement of described each factor.
Above-described detailed description of the invention; the purpose of the present invention, technical scheme and beneficial effect have been further described; it is it should be understood that; the foregoing is only the specific embodiment of the present invention; the protection domain being not intended to limit the present invention; all within the spirit and principles in the present invention, any amendment of making, equivalent replacement, improvement etc., should be included within protection scope of the present invention.
Claims (8)
1. the preparation method of an electroforming mould, it is characterised in that described method includes:
Figure according to micro-fluidic design, designs negative mask plate;
Spin coating negative photoresist on substrate;
Described negative mask plate is utilized to be exposed the photoresist on described substrate processing;
Photoresist after described exposure-processed is carried out development treatment, obtains photoetching offset plate figure;Described photoetching offset plate figure is carried out surface metalation process;
The litho pattern of described surface metalation is carried out electroforming process, obtains electroforming mould;
Described electroforming mould is soaked in alkaline solution, it is thus achieved that remove the electroforming mould of photoresist.
2. preparation method according to claim 1, it is characterised in that before being exposed the photoresist on described substrate processing, also include:
Photoresist on described substrate is carried out baking process.
3. preparation method according to claim 1, it is characterised in that before the photoresist after described exposure-processed is carried out development treatment, also include:
Photoresist after described exposure-processed is carried out baking process.
4. preparation method according to claim 1, it is characterised in that described described photoetching offset plate figure is carried out surface metalation process, including:
Described photoetching offset plate figure is first carried out aluminum thin film sputter, forms sacrifice layer;Then nickel thin film sputter is carried out.
5. method according to claim 1, it is characterised in that described alkaline solution is sodium hydroxide solution, its concentration is 8-20%.
6. preparation method according to claim 1, it is characterised in that described substrate is silicon materials.
7. preparation method according to claim 1, it is characterised in that the draft angle of described electroforming mould is not more than 90 degree.
8. the electroforming mould that prepared by the preparation method as described in any one of the claims 1~7.
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106222708A (en) * | 2016-08-30 | 2016-12-14 | 北京同方生物芯片技术有限公司 | Improve method and the electroforming micro-fluidic nickel mould of electroforming micro-fluidic nickel die life |
CN107177867A (en) * | 2017-05-08 | 2017-09-19 | 南京航空航天大学 | Crack the layering electrocasting method of rectangular waveguide |
CN108160124A (en) * | 2016-12-07 | 2018-06-15 | 中国科学院大连化学物理研究所 | Micro-fluidic chip with gradual change microchannel height, its preparation template and method |
CN108193236A (en) * | 2017-12-20 | 2018-06-22 | 广东工业大学 | A kind of micro-mould manufacturing method based on UV-LIGA technologies |
CN108452855A (en) * | 2018-04-15 | 2018-08-28 | 新羿制造科技(北京)有限公司 | The processing method of micro-fluidic chip |
CN108560027A (en) * | 2018-04-12 | 2018-09-21 | 深圳市华熠科技有限公司 | Metal sticker manufacturing method |
CN110318075A (en) * | 2018-03-29 | 2019-10-11 | 和谐工业有限责任公司 | Conduit assembly and forming method |
CN113502510A (en) * | 2021-06-07 | 2021-10-15 | 北京保利微芯科技有限公司 | Manufacturing method of integrated micro-column array metal mold and metal mold thereof |
CN116040576A (en) * | 2023-01-10 | 2023-05-02 | 北京大学 | Nanometer channel of flexible material and preparation method of female die of nanometer channel |
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CN106222708B (en) * | 2016-08-30 | 2018-07-13 | 北京同方光盘股份有限公司 | Improve the method and the micro-fluidic nickel mold of electroforming of electroforming micro-fluidic nickel die life |
CN106222708A (en) * | 2016-08-30 | 2016-12-14 | 北京同方生物芯片技术有限公司 | Improve method and the electroforming micro-fluidic nickel mould of electroforming micro-fluidic nickel die life |
CN108160124A (en) * | 2016-12-07 | 2018-06-15 | 中国科学院大连化学物理研究所 | Micro-fluidic chip with gradual change microchannel height, its preparation template and method |
CN107177867A (en) * | 2017-05-08 | 2017-09-19 | 南京航空航天大学 | Crack the layering electrocasting method of rectangular waveguide |
CN107177867B (en) * | 2017-05-08 | 2019-01-11 | 南京航空航天大学 | Crack the layering electrocasting method of rectangular waveguide |
CN108193236A (en) * | 2017-12-20 | 2018-06-22 | 广东工业大学 | A kind of micro-mould manufacturing method based on UV-LIGA technologies |
CN110318075A (en) * | 2018-03-29 | 2019-10-11 | 和谐工业有限责任公司 | Conduit assembly and forming method |
CN110318075B (en) * | 2018-03-29 | 2022-07-15 | 和谐工业有限责任公司 | Duct assembly and method of forming |
CN108560027A (en) * | 2018-04-12 | 2018-09-21 | 深圳市华熠科技有限公司 | Metal sticker manufacturing method |
CN108452855B (en) * | 2018-04-15 | 2021-02-26 | 新羿制造科技(北京)有限公司 | Method for processing micro-fluidic chip |
CN108452855A (en) * | 2018-04-15 | 2018-08-28 | 新羿制造科技(北京)有限公司 | The processing method of micro-fluidic chip |
CN113502510A (en) * | 2021-06-07 | 2021-10-15 | 北京保利微芯科技有限公司 | Manufacturing method of integrated micro-column array metal mold and metal mold thereof |
CN113502510B (en) * | 2021-06-07 | 2024-02-02 | 北京保利微芯科技有限公司 | Manufacturing method of integrated micro-column array metal mold and metal mold thereof |
CN116040576A (en) * | 2023-01-10 | 2023-05-02 | 北京大学 | Nanometer channel of flexible material and preparation method of female die of nanometer channel |
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Application publication date: 20160706 |