CN107177867A - Crack the layering electrocasting method of rectangular waveguide - Google Patents
Crack the layering electrocasting method of rectangular waveguide Download PDFInfo
- Publication number
- CN107177867A CN107177867A CN201710315486.1A CN201710315486A CN107177867A CN 107177867 A CN107177867 A CN 107177867A CN 201710315486 A CN201710315486 A CN 201710315486A CN 107177867 A CN107177867 A CN 107177867A
- Authority
- CN
- China
- Prior art keywords
- layer
- electroforming
- substrate
- rectangular waveguide
- cracks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
Abstract
A kind of layering electrocasting method for the rectangular waveguide that cracks, belongs to electric machining field, comprises the following steps：Step 1：In substrate（1）Surface coats one layer of photoresist（2）；Step 2：Carry out first time exposure；Step 3：Carry out first time development；Step 4：One layer of copper of electroforming（4）；Step 5：Carry out accurate rubbing down；Step 6：Coat one layer of photoresist（5）；Step 7：Second is carried out to expose；Step 8：Carry out second development；Step 9：Carry out surface conductance processing；Step 10：Microelectrolysis is carried out to first layer copper, the oxide-film on surface is removed；Step 11：Electroforming second layer copper（8）, form electroforming device（9）；Step 12：Unnecessary photoresist is dissolved, electroforming device is taken out（9）, accurate rubbing down is carried out to surface；Step 13：Clean electroforming device（9）, obtain the rectangular waveguide that cracks（10）.The rectangular waveguide that cracks is obtained by copper electroforming twice, and machining accuracy is high, and Technological adaptability is strong.
Description
Art
A kind of layering electrocasting method of rectangular waveguide that cracks of the present invention relates generally to eletroforming, belongs to EDM Technology
Field.
Background technology
THz wave refer to frequency 0.1THz to 10THz scopes, wavelength 0.03mm to 3mm scopes electromagnetic wave.Terahertz
The special performance of ripple is brought to fields such as broadband connections, radar imagery, electronic countermeasure, ELECTROMAGNETIC WEAPON, safety inspection, Non-Destructive Testings
Far-reaching influence, has broad application prospects in national security field.For example：Terahertz radar relative to microwave radar,
With the advantage such as high resolution, strong security, antijamming capability are protruded, gas ions penetration capacity is strong.
Metal waveguide is the conventional transmission line of THz low-frequency ranges, wherein metal rectangular waveguide because can effectively reduce absorption loss,
There is significant superiority in terms of transmission performance, and receive significant attention and pay attention to.The waveguide of THz frequency range metal rectangulars have compared with
Small face size and larger conveying length, are typical big L/D ratio microdevices.For example：1THz square wave guide cavity chi
Very little is 254 μm of 127 μ m, and tolerance is at ± 5 μm, waveguide cavity surface roughness Ra≤0.4 μm, the μ of minimum radius of corner R≤50
m；1.7THz rectangular waveguide face size is 165 μm of 83 μ m, radius of corner R≤20 μm.Terahertz metal rectangular waveguide
Precision manufactureing is extremely challenging, is always the key issue and Pinch technology for restricting the research and development of Terahertz application system.
In recent years, domestic and international research institution proposes all Alternatives to solve metal rectangular waveguide precision manufactureing problem.
But limited by processing method, the Terahertz rectangular waveguide closed at present is semi-enclosed U-shaped generally by subdivision
Chamber and cover plate separate machined, U-shaped chamber and cover plate are then assembled into rectangular waveguide device after machine-shaping respectively.Foreign countries,
Britain C.E.Collins etc. successfully processes combined type rectangular metal waveguide using photoetching micro-processing technology.The U.S.
G.Narayanan etc. processes 0.345THz waveguides by numerical control milling on integrated form high precision numerical control platform on metal derby
Chamber.U.S. A.Rowen etc. produces the 3THz of tens microns of inside dimension golden rectangular waveguide using multiple layer metal stacking.State
Interior, Yan Feng etc. processes rectangular metal waveguide chamber using photoetching galvanoplastics perhaps, and waveguide cavity surface is smooth straight, substantially without processing
Fillet.Sun Yujie etc. uses sacrifice layer photoetching process, prepares verticality of side wall very high rectangular waveguide cavity configuration.
Rectangular waveguide crack as a kind of special rectangular waveguide, has the small square hole of array arrangement in Surface Machining.With
The continuous improvement of waveguide work frequency, the small square hole size in rectangular waveguide surface that cracks accordingly reduces so that its difficulty processed
Spend more and more higher.Meanwhile, requirement of the high-frequency rectangular waveguide to minimum radius of corner and surface roughness also more and more higher, this makes
Obtaining some manufacturing process can not use.Such as Wire EDM, electric spark, Laser Processing, all because of the intrinsic fillet mistake of instrument
It can not use greatly.Therefore, existing process technology is difficult to meet the processing need that following THz wave transmits symmetry slot rectangular waveguide
Ask, it is necessary to develop other process technologies.
The content of the invention
Present invention aims at provide a kind of machining accuracy height, the rectangular waveguide electrocasting method that cracks of Technological adaptability by force.
A kind of layering electrocasting method for the rectangular waveguide that cracks, the slotting structure for the rectangular waveguide that cracks highly is L2, rectangular channel
Structure height is L3, it is characterised in that including procedure below：Step 1. prepares core, and core is by understructure and superstructure two
Part is constituted, and wherein understructure is the small cuboid pillar array structure that thickness is L2, and superstructure is that thickness is that L3 is length
Cube structure, specific preparation method is as follows：Step 1-1：The first layer photoresist that a layer thickness is L1 is coated in substrate surface；Step
Rapid 1-2：Substrate in step 1-1 by first time overlay film is placed on litho machine objective table, first time exposure mask plate is used
Carry out first time exposure；Step 1-3：Substrate in step 1-2 after first time exposes is put into developer solution and carries out first
Secondary development, cleans and dries after development, obtains core lower floor preliminary structure, and its height is L1；Step 1-4：Passed through in step 1-3
The substrate surface electroforming a layer thickness crossed after developing for the first time is L1 first layer copper；Step 1-5：To step 1-4 resulting structures
Surface carries out accurate rubbing down, it is ensured that first layer copper and the thickness of core understructure are L2；Step 1-6：Tied obtained by step 1-5
Structure surface coats the second layer photoresist that a layer thickness is L3；Step 1-7：By the substrate in step 1-6 by second of overlay film
It is placed on litho machine objective table, second is carried out with second of exposure mask plate and is exposed；Step 1-8：It will pass through in step 1-7
Substrate after second of exposure, which is put into developer solution, carries out second development, cleans and dries after development, obtains core upper strata knot
Structure；Step 1-9：Mask is covered by the substrate surface of second development in step 1-8, core superstructure upper surface is entered
The processing of row surface conductance forms one layer of conducting film；Step 1-10：Microelectrolysis is carried out to first layer copper upper surface, surface is removed
Oxide-film；Step 1-11：Electroforming second layer copper, first layer on the basis of the first layer copper of oxide-film are eliminated in step 1-10
Copper and second layer copper collectively constitute electroforming device, and core is located in electroforming device；Step 2：Unnecessary photoresist is dissolved, from substrate
Electroforming device is removed, accurate rubbing down is carried out to surface, required external dimensions is obtained；Step 3：Electroforming device is cleaned, what is obtained is institute
The rectangular waveguide that cracks needed.
Multiple rectangular waveguides that crack can be processed on said one substrate simultaneously.Rectangular waveguide crack by being layered electroforming two
Layer copper is directly obtained.
Invention advantage
1st, at present, the processing of the U-shaped chamber of metal rectangular waveguide is typically processed using minuteness milling.But with constantly carrying for working frequency
Height, rectangular waveguide face size accordingly reduces, and corresponding dimensional accuracy has broken through tradition machinery manufacturing limit.On the other hand,
Because traditional diamond-making technique is by above and below rectangular waveguide points of chamber separate machined, it is necessary to assure dividing the faying face of chamber up and down has very high
, otherwise easily there is the mutual clamping of part, with reference to the problems such as not close in flatness.In addition, what is produced in tradition machinery processing adds
Work stress and material stress can all cause the machining deformation of micro-structural, machine vibration, part material composition during micro- Milling Process
Machining accuracy and precision stability can be all influenceed with the factor such as uniformity, tool wear.And this method is used by electroforming
Two layers of bronze medal directly obtains the rectangular waveguide that cracks, and whole process is completed on same substrate, simplifies technical process, it is not necessary to examine
Consider the influence of assembly precision.And the method uniformity of eletroforming is good, no machining stress, it is to avoid the hair that traditional processing is present
Many, the yielding shortcomings of thorn, it is ensured that the structure for the rectangular waveguide that cracks and required precision.
2nd, because the rectangular waveguide that cracks has the feature of high aspect ratio, and there is small square hole array in side, it is difficult to once
Machine-shaping, so the rectangular waveguide that will be cracked in the present invention is divided into two layers to process, first time photoetching forms correspondence with photoresist
The small square column array of small square hole array, then one layer of copper of electroforming rectangular waveguide that completes to crack crack the processing of side.Second
Secondary photoetching forms the high aspect ratio inner chamber for the rectangular waveguide that cracks with photoresist, and then one layer of copper of electroforming forms the complete square that cracks again
Shape waveguide.The advantage of photoetching can be accurately on the graph copying on mask plate to photoresist.Meanwhile, using film mulching method
Photoresist is coated, the steps such as spin coating, front baking is eliminated, saves process time.Further, since photoresist is nonmetallic materials,
It can be dissolved with organic solvent, influence will not be produced on other metal materials.
3rd, because photoresist is non-conductive, if the direct electroforming after second development, the square of a closing cannot be formed
Shape waveguide cavities.Therefore this method first carries out surface conductance processing after second development to photoresist surface, in photoresist
Face table one layer of other conducting film of submicron order of formation, neither influences the size of inner chamber, and can cause after electroforming second layer copper directly
Form the rectangular waveguide inner chamber of closing.
4th, due to also being needed after electroforming first layer copper by other several steps ability electroforming second layer copper, in first layer
Copper surface may produce oxide-film.If direct electroforming second layer copper, can influence the adhesion between two layers of bronze medal, or even shadow
Ring the transmission performance for the rectangular waveguide that cracks.Therefore this method first carries out micro electricity in the electroforming second layer with before to first layer copper
Solution, removes oxide film dissolving, so as to improve the adhesion between two layers of bronze medal, them is formed a complete waveguide cavity.
5th, in production, the size of rectangular waveguide of cracking might have and change with the changes in demand of practical application.Now,
Only need to change the thickness of the figure and photoresist on mask plate, simple and quick, Technological adaptability is strong.Meanwhile, one
Multiple rectangular waveguides that crack can be processed on substrate simultaneously, processing efficiency is improved.
Brief description of the drawings
Fig. 1 coats photoresist profile figure for the first time;
Fig. 2 exposes profile for the first time;
Fig. 3 first time development profiles;
Fig. 4 electroforming first layer copper profiles;
Second of coating photoresist profile figure of Fig. 5;
Fig. 6 exposes profile for the second time;
Fig. 7 second development profiles;
Fig. 8 surface conductance processing profiles figures;
Fig. 9 electroforming second layer copper profiles;
The rectangular waveguide schematic diagram that cracks obtained after Figure 10 cleanings;
Label title in figure：1st, substrate, 2, first layer photoresist, 3, first time exposure mask plate, 4, first layer copper, 5, the second layer
Photoresist, 6, second of exposure mask plate, 7, mask, 8, second layer copper,
9th, electroforming device；10th, crack rectangular waveguide.
Embodiment
The rectangular waveguide that cracks of required preparation is as shown in Figure 10, using following preparation process：
Step 1：The photoresist 2 that a layer thickness is L1 is coated on the surface of substrate 1；
Step 2：Substrate 1 in step 1 by first time overlay film is placed on litho machine objective table, first time exposed mask is used
Plate 3 carries out first time exposure；
Step 3：Substrate 1 in step 2 after first time exposes is put into progress first time development in developer solution, it is clear after development
Wash and dry；
Step 4：Surface electroforming a layer thickness of substrate 1 after first time develops is L1's in step 3
Copper 4；
Step 5：Accurate rubbing down is carried out to the surface of copper electroforming in step 44, it is ensured that the thickness of first layer copper 4 is L2；
Step 6：In steps of 5 the photoetching that a layer thickness is L3 is coated by the surface of copper 4 of accurate rubbing down
Glue 5；
Step 7：Substrate 1 in step 6 by second of overlay film is placed on litho machine objective table, second of exposed mask is used
Plate 6 carries out second and exposed；
Step 8：Substrate 1 in step 7 after second exposes is put into developer solution and carries out second development, it is clear after development
Wash and dry；
Step 9：In step 8 surface conductanceization processing such as chemistry are carried out by mask 7 in the surface cover of substrate 1 of second development
Vapour deposition, physical vapour deposition (PVD), chemical plating etc., form one layer of conducting film;
Step 10：Microelectrolysis is carried out to first layer copper 4, the oxide-film on surface is removed；
Step 11：Electroforming second layer copper 8 on the basis of the first layer copper 4 of oxide-film is eliminated in step 10, obtains electroforming device 9；
Step 12：Unnecessary photoresist is dissolved, electroforming device 9 is removed from substrate 1, accurate rubbing down is carried out to surface, institute is obtained
Need size；
Step 13：Electroforming device 9 is cleaned, what is obtained is the required rectangular waveguide 10 that cracks.
Claims (2)
1. a kind of layering electrocasting method for the rectangular waveguide that cracks, the slotting structure for the rectangular waveguide that cracks highly is L2, rectangular channel knot
Structure is highly L3, it is characterised in that including procedure below：
Step 1. prepares core, and core is made up of understructure and superstructure two parts, and wherein understructure is that thickness is L2
Small cuboid pillar array structure, superstructure is that thickness is that L3 is rectangular parallelepiped structure, and specific preparation method is as follows：
Step 1-1：In substrate（1）Surface coats the first layer photoresist that a layer thickness is L1（2）；
Step 1-2：The substrate of first time overlay film will be passed through in step 1-1（1）It is placed on litho machine objective table, with for the first time
Exposure mask plate（3）Carry out first time exposure；
Step 1-3：By the substrate in step 1-2 after first time exposes（1）Progress first time development in developer solution is put into, is shown
Movie queen cleans and dried, and obtains core lower floor preliminary structure, and its height is L1；
Step 1-4：Substrate in step 1-3 after first time develops（1）Electroforming a layer thickness in surface is L1 first layer
Copper（4）；
Step 1-5：Accurate rubbing down is carried out to step 1-4 resulting structures surface, it is ensured that first layer copper（4）With core understructure
Thickness be L2；
Step 1-6：The second layer photoresist that a layer thickness is L3 is coated in step 1-5 resulting structures surface（5）；
Step 1-7：By the substrate in step 1-6 by second of overlay film（1）It is placed on litho machine objective table, with second
Exposure mask plate（6）Second is carried out to expose；
Step 1-8：By the substrate in step 1-7 after second exposes（1）It is put into developer solution and carries out second development, shows
Movie queen cleans and dried, and obtains core superstructure；
Step 1-9：Pass through the substrate of second development in step 1-8（1）Mask in surface cover（7）, to core superstructure
Upper surface carries out surface conductance processing and forms one layer of conducting film；
Step 1-10：To first layer copper（4）Upper surface carries out microelectrolysis, removes the oxide-film on surface；
Step 1-11：The first layer copper of oxide-film is eliminated in step 1-10（4）On the basis of electroforming second layer copper（8）, first
Layer copper（4）Electroforming device is collectively constituted with second layer copper（9）, core is positioned at electroforming device（9）In；
Step 2：Unnecessary photoresist is dissolved, from substrate（1）On remove electroforming device（9）, accurate rubbing down is carried out to surface, is obtained
Required external dimensions；
Step 3：Clean electroforming device（9）, what is obtained is the required rectangular waveguide that cracks（10）.
2. a kind of layering electrocasting method of rectangular waveguide that cracks according to claim 1, it is characterised in that：In same base
Multiple rectangular waveguides that crack can be processed on piece simultaneously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710315486.1A CN107177867B (en) | 2017-05-08 | 2017-05-08 | Crack the layering electrocasting method of rectangular waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710315486.1A CN107177867B (en) | 2017-05-08 | 2017-05-08 | Crack the layering electrocasting method of rectangular waveguide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107177867A true CN107177867A (en) | 2017-09-19 |
| CN107177867B CN107177867B (en) | 2019-01-11 |
Family
ID=59831065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710315486.1A Active CN107177867B (en) | 2017-05-08 | 2017-05-08 | Crack the layering electrocasting method of rectangular waveguide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107177867B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109728420A (en) * | 2019-01-03 | 2019-05-07 | 中天宽带技术有限公司 | A kind of oscillator and its manufacturing method of hollow structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050276914A1 (en) * | 2004-06-15 | 2005-12-15 | Liu Ming-Dah | Method for manufacturing light guide plate mold cores |
| CN101557028A (en) * | 2009-05-26 | 2009-10-14 | 中国科学院微电子研究所 | Method for preparing micro wave guide |
| CN102277598A (en) * | 2011-07-18 | 2011-12-14 | 河南理工大学 | Method for manufacturing core mold for use in electroforming of flared micro hole array |
| CN103320825A (en) * | 2013-06-06 | 2013-09-25 | 宁波微极电子科技有限公司 | Method for manufacturing high-density large-scale micro-nano-structure array |
| CN105463517A (en) * | 2015-12-31 | 2016-04-06 | 湖南航天环宇通信科技股份有限公司 | Electrotyping forming method of waveguide assembly |
| CN105734619A (en) * | 2016-03-03 | 2016-07-06 | 北京同方生物芯片技术有限公司 | Electric casting mold and preparation method thereof |
| CN105908222A (en) * | 2016-05-03 | 2016-08-31 | 岭南师范学院 | Preparation method of precise chip metal mold with low cost and high utilization rate |
-
2017
- 2017-05-08 CN CN201710315486.1A patent/CN107177867B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050276914A1 (en) * | 2004-06-15 | 2005-12-15 | Liu Ming-Dah | Method for manufacturing light guide plate mold cores |
| CN101557028A (en) * | 2009-05-26 | 2009-10-14 | 中国科学院微电子研究所 | Method for preparing micro wave guide |
| CN102277598A (en) * | 2011-07-18 | 2011-12-14 | 河南理工大学 | Method for manufacturing core mold for use in electroforming of flared micro hole array |
| CN103320825A (en) * | 2013-06-06 | 2013-09-25 | 宁波微极电子科技有限公司 | Method for manufacturing high-density large-scale micro-nano-structure array |
| CN105463517A (en) * | 2015-12-31 | 2016-04-06 | 湖南航天环宇通信科技股份有限公司 | Electrotyping forming method of waveguide assembly |
| CN105734619A (en) * | 2016-03-03 | 2016-07-06 | 北京同方生物芯片技术有限公司 | Electric casting mold and preparation method thereof |
| CN105908222A (en) * | 2016-05-03 | 2016-08-31 | 岭南师范学院 | Preparation method of precise chip metal mold with low cost and high utilization rate |
Non-Patent Citations (1)
| Title |
|---|
| 许延峰等: "基于3D化学成型技术的太赫兹器件加工", 《微波学报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109728420A (en) * | 2019-01-03 | 2019-05-07 | 中天宽带技术有限公司 | A kind of oscillator and its manufacturing method of hollow structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107177867B (en) | 2019-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103706899B (en) | For the line electrode array structure preparation method of electrochemical micromachining | |
| CN105186091B (en) | A kind of production method of the extra small metal waveguide of terahertz wave band | |
| CN105470094A (en) | Ion optical device and mass spectrometer | |
| WO2010023925A1 (en) | Plasma etching method, plasma etching device and photonic crystal manufacturing method | |
| CN108963462A (en) | A kind of Terahertz ripple Feed Horn manufacturing method | |
| US20180274104A1 (en) | Cold Gas Dynamic Spraying Using A Mask | |
| CN105140599B (en) | A kind of linear motion type waveguide switch | |
| CN107177867A (en) | Crack the layering electrocasting method of rectangular waveguide | |
| KR100394810B1 (en) | Method of manufacturing dielectric waveguide and dielectric waveguide | |
| CN109286056A (en) | Terahertz coat of metal hollow rectangular waveguide integral manufacturing method | |
| CN106917115B (en) | The electrocasting method of leaky waveguide | |
| Starodubov et al. | Technological approaches to the microfabrication of planar slow-wave structures for millimeter-and THz-band vacuum electron devices | |
| CN115799795B (en) | Mass electroforming manufacturing method for terahertz metal hollow rectangular waveguide cavity | |
| CN105762491A (en) | Terahertz transmission array antenna and preparation method thereof | |
| KR20130024453A (en) | Plasma reactor having dual inductively coupled plasma source | |
| CN105572781B (en) | A kind of optical element with non-uniform polarisation selectivity | |
| CN103983858B (en) | High-precision broadband measurement method for dielectric property of low-loss material | |
| CN110029351B (en) | Super-hydrophilic metal surface micro-nano structure and manufacturing method thereof | |
| CN102593718B (en) | Preparation method for intermediate infrared laser | |
| CN109362178A (en) | A kind of VOP production method of silicon microphone pcb board | |
| CN111180753B (en) | Method for processing metal bipolar plate of fuel cell | |
| Spindloe et al. | An update of target fabrication techniques for the mass production of advanced fast ignition cone targets | |
| CN210803334U (en) | Atomic beam microscope | |
| US6585566B2 (en) | Method for manufacturing dielectric wave guide | |
| CN108551723B (en) | Partitioned seamless laser processing method of circuit board for thick gas electron multiplier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |