CN103706899B - For the line electrode array structure preparation method of electrochemical micromachining - Google Patents
For the line electrode array structure preparation method of electrochemical micromachining Download PDFInfo
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- CN103706899B CN103706899B CN201310681914.4A CN201310681914A CN103706899B CN 103706899 B CN103706899 B CN 103706899B CN 201310681914 A CN201310681914 A CN 201310681914A CN 103706899 B CN103706899 B CN 103706899B
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Abstract
The invention discloses a kind of line electrode array structure preparation method for electrochemical micromachining, step comprises: the pretreatment of step 1, metal substrate; Step 2, make graphical masking film; Step 3, mask electrolysis deep etching, with the metal substrate of surface graphics for anode carries out Electrolyzed Processing, obtain the tool cathode in mask electrolysis deep etching processing and fabricating line electrode template, according to photoetching offset plate figure width and electrolytic current density determination electrolytic etching time, until obtain the metal grid lines array pattern of top point; Step 4, removal backing material, remove the backing material corresponding with the metal grid lines made to obtain and frame line electrode array integrally.Method of the present invention, can make cross section is the difform metal micro structure arrays such as square, rectangle, rhombus, the metal micro structure array of the large depth-to-width ratio of effective implemention, high density, high crudy.
Description
Technical field
The invention belongs to electrochemical micromachining technical field, main application target is the preparation of high-aspect-ratio metal micro structure array, relates to a kind of line electrode array structure preparation method for electrochemical micromachining.
Background technology
In MEMS, high aspect ratio microstructures can bring higher sensitivity, larger displacement or stronger driving force for micro element, such as, in Aero-Space airborne equipment, micro mirror array, microfluid sensor, micro motor and minute nozzle etc., in order to obtain the micro-system of high reliability, high s/n ratio signal, high-transmission efficiency, low energy losses, high integration, the making of high aspect ratio microstructures is the important goal pursued in MEMS.
Electrochemical micromachining (EMM) is based on electrochemical metal solution principle, there is processing work surface and there is not the defect such as thermal deformation and micro-crack, batch machining can be realized, with the advantage such as material hardness is irrelevant, in micro-nano manufacturing technology group, occupy critical positions at present.Electrochemical micromachining technology can be divided into mask Electrolyzed Processing and without mask Electrolyzed Processing.Mask Electrolyzed Processing main advantage is not need to make micro tool electrode, can realize large area parallel fabrication by means of the photoetching technique of maturation.Subject matter is: depth direction, while dissolving, horizontal dissolving also occurs, and the etching factor (etching depth and side direction dissolve the ratio of width) is difficult to improve.That Electrolyzed Processing is carried out in the tool-electrode miniaturization of macroscopical electrolysis process without mask micro-electrochemical machining, can carry out the processing of the micro-feature of tens nanometer at present, the greatest problem existed without mask micro-electrochemical machining technique is because the working (machining) efficiency of its serial process essence decision is very low.
In order to improve the efficiency without mask Electrolyzed Processing, domestic and international researcher proposes group act on sets and line electrode electrolysis machining method, in the processing of these class methods, the production method of group act on sets and line electrode and quality determine working ability and crudy to a great extent, and typical method comprises:
1) prepare group act on sets by LIGA technology, micro EDM, micro-cutting processing, electrode prepared by the method can realize the processed in batches in group hole, and subject matter is: large area micro electrode arrays complicated process of preparation; In order to process high density group hole, electrode column spacing is very little, and when adopting this electrode to carry out Electrolyzed Processing, dispersion corrosion is serious; In addition, still there is tradition without the problem being difficult to process the steep micro-structural of wall in mask Electrolyzed Processing, in order to solve dispersion corrosion problem, have employed the electrolysis that sidewall carries out insulation processing, but preparation technology is more complicated;
2) carry out the processing of bundle pillar micro-structural using metal screen printing plate as group act on sets, the half tone back side and sidewall carry out depositing insulating layer, but complex process, and difformity figure needs to make different half tone;
3) single line electrode is adopted, line electrode time processing can go out a groove, and with tradition without compared with mask Electrolyzed Processing, the dispersion corrosion of line electrode to newly-generated structure is little, be expected to solve in common minute yardstick Electrolyzed Processing the problem being difficult to process suitable to fine structure with high depth-width ratio, although deficiency improves than single post electrode machining efficiency, still there is the problem that working (machining) efficiency is low;
4) be wrapped in by micro-wire in specific frame and form line-group seam electrode, the method increase line electrode working (machining) efficiency, shortcoming is because wire and framework are not integrated processing, and wire winding difficulty is large, and the uniformity of line electrode size and spacing is difficult to ensure.
Summary of the invention
The object of this invention is to provide a kind of line electrode array structure preparation method for electrochemical micromachining, solve that the working (machining) efficiency that prior art exists in electrochemical micromachining process is low, machining accuracy not and be difficult to process the problem of high aspect ratio microstructures.
The technical solution adopted in the present invention is, a kind of line electrode array structure preparation method for electrochemical micromachining, specifically comprises the following steps:
The pretreatment of step 1, metal substrate;
Step 2, make graphical masking film;
Step 3, mask electrolysis deep etching
With the metal substrate of surface graphics for anode carries out Electrolyzed Processing, obtain the tool cathode in mask electrolysis deep etching processing and fabricating line electrode template, according to photoetching offset plate figure width and electrolytic current density determination electrolytic etching time, until obtain the metal grid lines array pattern of top point;
Step 4, removal backing material, remove the backing material corresponding with the metal grid lines made, and obtains and frame line electrode array integrally.
The invention has the beneficial effects as follows, the electrochemical micromachining adopting line electrode array to carry out high-aspect-ratio metal micro structure as tool cathode makes, and achieves the efficient making of high-aspect-ratio metal micro structure array, it is characterized in that following aspect:
1) line electrode array structure makes is combine by mask electrolysis deep etching the method removing backing material, realizes the integration manufacture of line electrode wire and framework;
2) line electrode array fabrication process comprises the following steps: front obtains the photoresist line strip array of big space rate through gluing, exposure, development; Carry out micro-electrochemical machining deep etching, after removing photoresist, obtain the array of metal lines with enough height; Carry out material removal process at the dorsal area corresponding with front metal line, be deep to front metal line, thus obtain the tinsel electrode array configurations with metal edge frame one;
3) tool-electrode is with certain speed to workpiece feeding, and can go out micro groove array by processed in batches, tool-electrode or workpiece rotate to an angle and again process, and can produce metal micro-pillar array that is square, diamond-shaped cross-section;
4) control tool electrode is in the feeding step pitch of workpiece place plane, can control the density (or width of micro-boss) of processed micro groove;
5) on tool-electrode metal wire, the feature of sharp complimentary close makes to reduce the impact of newly-generated micro-structural wall in process, can improve the steep property of the sidewall of line electrode electrochemical micromachining further.
Feature of the present invention also comprises:
1) wire is integrated with frame processes, wire live width and pitch uniformity good;
2) can according to the requirement of dispersion corrosion of drawing up and the calculated results, appropriate design is carried out to mask dutycycle during mask electrolysis deep processing making line electrode, making line electrode wire dispersion corrosion each other when carrying out line electrolysis microfabrication of making enough little, improving the locality of processing;
3) between tool-electrode and workpiece anode, the move toward one another of vertical direction is unrestricted, can make the unrestricted micro-structural of depth-to-width ratio in theory;
4) can the relative motion in workpiece planarization by accurate control tool electrode and workpiece anode, carry out the making of small―gap suture high density micro structure array;
5) the different of the angle in control twice processing between tool-electrode from workpiece can be passed through, produce the metal micro structure array of different cross section shape;
6) on line electrode processing and tool-electrode line, the lower wide feature of point makes processed microstructure side wall steepness improve.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of the inventive method;
Fig. 2 is the sidewall steepness schematic diagram that the electrode adopting the present invention to make carries out adding man-hour;
Fig. 3 is the schematic diagram adopting traditional electrode to carry out adding sidewall steepness in man-hour;
Fig. 4 is the process flow diagram adopting the inventive method to make square-section or diamond-shaped cross-section micro structure array.
In figure, 1. metal substrate, 2. photoresist, 3. mask plate, 4. graphical photoresist, 5. tool cathode, 6. line electrode array, 7. line electrode cross section, 8. workpiece interface, 9. tool-electrode, 10. workpiece to be processed, 11. surface of the work groove arrays, 12. square-section micro structure arrays, 13. diamond-shaped cross-section micro structure arrays.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
With reference to Fig. 1, the present invention is used for the line electrode array structure preparation method of electrochemical micromachining, and (describe mask electrolysis deep etching and combine the technical process removed backing material and prepare line electrode), specifically comprises the following steps:
The pretreatment of step 1, metal substrate: metal substrate 1 adopts copper product, the object of process makes specimen surface smooth and clean drying, energy and photoresist better adhere to, concrete grammar carries out polishing to metal substrate 1 on polishing machine, make surface roughness Ra≤0.3, then use acetone, alcohol and washed with de-ionized water successively, then dry on dryer after drying up with nitrogen stand-by (see Fig. 1 a).
Step 2, to make for the graphical masking film of mask Electrolyzed Processing: masking film needs to have good electrical insulating property, and adopt the photoresist 2 of EPG533 model in embodiment, idiographic flow comprises:
Front baking, toasts 10-15min by the metal substrate 1 cleaned up at 110 DEG C-120 DEG C, and the object of front baking makes metal substrate surface fully dry, to increase the adhesiveness of photoresist 2 in metallic substrates;
Gluing, adopts spin-coating method to see Fig. 1 b at the photoresist 2(that coating one deck 2-5 μm in metal substrate 1 surface is thick);
Middle baking, temperature 100 DEG C-110 DEG C, time 10-15min, the object of middle baking removes the solvent in photoresist 2, and photoresist 2 is solidified to a certain extent;
Exposure, covers one deck mask plate 3 at photoresist 2 outer surface, and adopt litho machine (model selects ABM350//NOV/DCCD) to expose, time for exposure 8-10s(is shown in Fig. 1 c);
Development, developer solution select mass concentration be 4 ‰-6 ‰ NaOH solution (solvent is water), developing time is 55-65s, thus obtains the photoresist bargraphs of certain dutycycle, and after namely obtaining exposure imaging, the graphical photoresist 4(on metal substrate 1 surface is shown in Fig. 1 d).
Step 3, mask electrolysis deep etching: with the metal substrate 1 of surface graphics for anode carries out Electrolyzed Processing, the tool cathode 5(obtained in mask electrolysis deep etching processing and fabricating line electrode template is shown in Fig. 1 e), technological parameter is: electrolyte selects mass concentration to be the NaCl mixed liquor (solvent is also water) of 5%-10%NaNO3 and 5%-10%, and current density is 5-20A/dm
2voltage is 2-5V, and spacing is 20-30mm, and electrolytic etching carries out the mass transfer improved in deep etching in ultrasound environments, according to photoetching offset plate figure width and electrolytic current density determination electrolytic etching time, until obtain the metal grid lines array pattern of top point, (Fig. 1 f is before removing photoresist; Fig. 1 g is after removing photoresist).
Step 4, remove backing material (see Fig. 1 h): remove the backing material corresponding with the metal grid lines made to obtain the wire array with frame one, due to wire comparatively thin (several microns to some tens of pm), minimizing technology needs to ensure not destroy wire array, preferably the method for (but being not limited to) comprises mask electrolysis, post electrolysis, the combination of Laser Processing and various ways thereof, the method removed in the present embodiment adopts mask electrolysis (shelter and give over to frame portion), need according to metal substrate 1 thickness and rate of dissolution accurate controlled working time, through above-mentioned processing step, the line electrode array 6(obtaining wire array and frame one is shown in Fig. 1 i), .
Described electrolysis masking film is obtained by the method for photoetching, and the width of masking film determines according to suppressing the requirement of dispersion corrosion.
Line electrode realizes wire by mask electrolytic etching in conjunction with backing material removal technique and processes with the integrated of frame.Because line electrode defines penetrating wire seam, when adopting this line electrode to carry out Electrolyzed Processing, the depth of microstructure that can process is unrestricted in theory.
The line electrode cross section adopting the inventive method to make is triangle, this cross section metal line carries out adding man-hour as tool-electrode, be conducive to the steepness improving sidewall, machined surface distance electrode is distant, dispersion corrosion is corresponding less, thus improve the steepness of sidewall processing, as shown in Figure 2, be that the line electrode that made line electrode cross section 7 and employing the present invention make carries out metal micro structure workpiece interface that Electrolyzed Processing is processed 8.In conventional post electrode or line electrode process, the surface processed is because distance electrode is apart near, in depth direction process, sidewall is in dissolved state all the time, so the sidewall finally processed is an inclined-plane, as shown in Figure 3, traditional tool-electrode 9 is the structural representation of rectangle post electrode (for contrast).
Embodiment
With reference to Fig. 4, be the application of electrode made by the inventive method, adopt line electrode array of the present invention to carry out metal micro structure array processing, implement according to following steps:
Step 1, workpiece prepare, and (Fig. 4 a): to workpiece to be processed 10 surface finish, cleaning, dries stand-by;
Step 2, tool-electrode prepare (Fig. 4 b): adopt above-mentioned line electrode array making method (technological principle is see Fig. 1) to make the line electrode of wire and framework integration, the distance between made line electrode wire is controlled by photoresist masking film width dimensions during control line electrode fabrication, the impact of mutual dispersion corrosion when making to adopt above-mentioned line electrode to carry out Electrolyzed Processing between line electrode is enough little, to improve the locality of processing;
Step 3, groove Electrolyzed Processing (Fig. 4 c): the move toward one another of vertical direction between control tool line electrode and workpiece, process sidewall, the unrestricted groove of the degree of depth, when being worked into projected depth, tool-electrode rollback, prepares to carry out next Pocket Machining;
The groove array processing of step 4, spacing-controllable: the relative motion of parallel direction between control tool electrode and workpiece, to the flute pitch of design, repeat step 3(Fig. 4 d again), stepping processing successively, obtain the groove array of the technological requirement degree of depth and spacing, the surface of the work groove array 11(Fig. 4 e namely obtained after stepping processing);
Step 5, by tool-electrode relative to workpiece half-twist, repeat step 3 and step 4(Fig. 4 f again), obtain the technological requirement degree of depth and width, cross section are the metal micro structure array of rectangle, the square-section micro structure array 12(Fig. 4 h namely obtained after the processing of vertical direction secondary feed);
Step 6, tool-electrode rotated relative to workpiece other is arbitrarily angled, repeat step 3 and step 4(Fig. 4 g again), obtain requiring that the degree of depth and width, cross section are the metal micro structure array of rhombus, namely the diamond-shaped cross-section micro structure array 13(Fig. 4 i obtained is processed in the angled stepping in secondary feed direction and primary feed direction).
Line electrode array structure preparation method for scroll saw electrochemical micromachining of the present invention, by photoetching, mask electrolysis deep etching and the line electrode array removing backing material formation line thickness and spacing uniformity.Relative to traditional group act on sets, the electrode adopting the inventive method to make can by the spacing of mask design control tool electrode line, thus the stray electric field corrosion between control electrode lines, and the density of institute's processing micro structure controls by controlling feeding step pitch, thus largely solve the contradiction between graphics processing density and dispersion corrosion in group act on sets processing; Line electrode array is made by photoetching and mask electrolysis, and line thickness, spacing uniformity are good; By making angledly between tool-electrode and workpiece anode to carry out repeatedly stepping Electrolyzed Processing, can make cross section is the difform metal micro structure arrays such as square, rectangle, rhombus, can realize the efficient making of large depth-to-width ratio, high density, high crudy metal micro structure array.
Claims (1)
1., for a line electrode array structure preparation method for electrochemical micromachining, it is characterized in that, specifically comprise the following steps:
The pretreatment of step 1, metal substrate,
Metal substrate (1) adopts copper product, carries out polishing, makes surface roughness Ra≤0.3, then use acetone, alcohol and washed with de-ionized water successively, then dry up post-drying with nitrogen metal substrate (1);
Step 2, make graphical masking film, idiographic flow comprises:
Front baking, toasts 10-15min by the metal substrate cleaned up (1) at 110 DEG C-120 DEG C;
Gluing, adopts spin-coating method to apply the thick photoresist (2) of one deck 2-5 μm on metal substrate (1) surface;
Middle baking, temperature 100 DEG C-110 DEG C, time 10-15min;
Exposure, covers one deck mask plate (3) at photoresist (2) outer surface, and exposes, time for exposure 8-10s;
Development, developer solution select mass concentration be 4 ‰-6 ‰ NaOH solution, developing time is 55-65s, obtains photoresist bargraphs, namely obtains the graphical photoresist (4) on metal substrate (1) surface after exposure imaging;
Step 3, mask electrolysis deep etching
With the metal substrate of surface graphics (1) for anode carries out Electrolyzed Processing, obtain the tool cathode (5) in mask electrolysis deep etching processing and fabricating line electrode template, according to photoetching offset plate figure width and electrolytic current density determination electrolytic etching time, until obtain the metal grid lines array pattern of top point
Technological parameter is: electrolyte selects mass concentration to be the NaCl mixed liquor of 5%-10%NaNO3 and 5%-10%, and current density is 5-20A/dm
2, voltage is 2-5V, and spacing is 20-30mm, and electrolytic etching carries out in ultrasound environments;
Step 4, removal backing material, remove the backing material corresponding with the metal grid lines made, minimizing technology adopts mask electrolysis, post electrolysis or laser processing, obtains and frame line electrode array (6) integrally.
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|---|---|---|---|---|
| CN104001997B (en) * | 2014-05-27 | 2016-08-24 | 南京航空航天大学 | The method of contact Electrolyzed Processing array unevenness |
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| CN108080782B (en) * | 2018-01-02 | 2020-02-21 | 南京航空航天大学 | Side wall insulation method of micro-hole electrolytic machining electrode and application |
| CN108796438B (en) * | 2018-07-24 | 2021-01-15 | 京东方科技集团股份有限公司 | Mask plate preparation method, mask plate and evaporation equipment |
| CN110275097B (en) * | 2019-06-25 | 2020-09-22 | 清华大学 | Nanoscale gap electric spark discharge test system and method |
| CN113319387B (en) * | 2021-06-18 | 2022-04-12 | 南京航空航天大学 | Large-scale preparation method of heat exchange enhancement microstructure |
| CN114769759A (en) * | 2022-05-26 | 2022-07-22 | 南京航空航天大学 | Method for inhibiting stray corrosion in spin-printing electrolytic machining |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006263865A (en) * | 2005-03-24 | 2006-10-05 | Ngk Insulators Ltd | Back hole forming method of mouth piece for molding honeycomb structure forming |
| CN1958206A (en) * | 2006-10-10 | 2007-05-09 | 南京航空航天大学 | Electrochemical machining method in cellular dimple structure |
| CN101791726A (en) * | 2010-04-22 | 2010-08-04 | 西安交通大学 | Processing method of cylindrical component with mask micro-structure on outer curved surface |
| CN101804960A (en) * | 2010-01-13 | 2010-08-18 | 西安交通大学 | Ultra-fine cone electrode array and method for manufacturing same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6624377B2 (en) * | 2001-06-01 | 2003-09-23 | Wisconsin Alumni Research Foundation | Micro-electro-discharge machining method and apparatus |
-
2013
- 2013-12-12 CN CN201310681914.4A patent/CN103706899B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006263865A (en) * | 2005-03-24 | 2006-10-05 | Ngk Insulators Ltd | Back hole forming method of mouth piece for molding honeycomb structure forming |
| CN1958206A (en) * | 2006-10-10 | 2007-05-09 | 南京航空航天大学 | Electrochemical machining method in cellular dimple structure |
| CN101804960A (en) * | 2010-01-13 | 2010-08-18 | 西安交通大学 | Ultra-fine cone electrode array and method for manufacturing same |
| CN101791726A (en) * | 2010-04-22 | 2010-08-04 | 西安交通大学 | Processing method of cylindrical component with mask micro-structure on outer curved surface |
Non-Patent Citations (1)
| Title |
|---|
| 《UV-LIGA制作超高微细阵列电极技术》;胡洋洋等;《光学精密工程》;20100315(第3期);论文正文第671-672页 * |
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