CN103706899A - Wire electrode array structure preparation method for micro-electrochemical machining - Google Patents

Wire electrode array structure preparation method for micro-electrochemical machining Download PDF

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CN103706899A
CN103706899A CN201310681914.4A CN201310681914A CN103706899A CN 103706899 A CN103706899 A CN 103706899A CN 201310681914 A CN201310681914 A CN 201310681914A CN 103706899 A CN103706899 A CN 103706899A
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micro
line electrode
electrode array
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electrode
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CN103706899B (en
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王权岱
肖继明
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Jiangsu Weizhi Field Intelligent Technology Co ltd
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Xian University of Technology
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Abstract

The invention discloses a wire electrode array structure preparation method for micro-electrochemical machining. The wire electrode array structure preparation method includes the steps of 1), pretreating a metal base; 2), manufacturing a graphical masking film; 3), subjecting the masking film to profound electrolytic corrosion, namely taking the metal base with the graphical surface as a positive electrode for electrolytic machining to obtain a tool negative electrode in a wire electrode template machined and manufactured in the profound electrolytic corrosion, and determining electrolytic corrosion time according to photoresist pattern width and electrolysis current density till to obtain a metal gate line array pattern with the point top; 4), removing back materials, namely removing the back materials corresponding to the manufactured metal gate lines to obtain a wire electrode array integrated with a frame. By means of the method, the metal microstructure array with cross sections different in shapes like square, rectangle and rhombus can be manufactured, so that the metal microstructure array with large depth-to-width ratio, high density and high machining quality can be efficiently realized.

Description

Line electrode array structure preparation method for micro-electrochemical machining processing
Technical field
The invention belongs to micro-electrochemical machining processing technique field, main application target is the preparation of high-aspect-ratio metal micro structure array, relates to a kind of line electrode array structure preparation method for micro-electrochemical machining processing.
Background technology
In MEMS, high aspect ratio microstructures can bring higher sensitivity, larger displacement or stronger driving force for micro element, for example, at aspects such as Aero-Space airborne equipment, micro mirror array, microfluid sensor, micro motor and minute nozzles, in order to obtain the micro-system of high reliability, high s/n ratio signal, high-transmission efficiency, low energy losses, high integration, the making of high aspect ratio microstructures is the important goal of pursuing in MEMS.
Micro-electrochemical machining processing (EMM) is based on electrochemical metal solution principle, have processing work surface there is not the defects such as thermal deformation and micro-crack, can realize batch machining, with the advantage such as material hardness is irrelevant, in micro-nano manufacturing technology group, occupy critical positions at present.Micro-electrochemical machining process technology can be divided into mask Electrolyzed Processing and without mask Electrolyzed Processing.Mask Electrolyzed Processing main advantage is not need to make micro tool electrode, can realize by means of ripe photoetching technique the parallel processing of large area.Subject matter is: horizontal dissolving also occurs when dissolving depth direction, and the etching factor (etching depth and side direction are dissolved the ratio of width) is difficult to improve.Without mask micro-electrochemical machining, be that the tool-electrode miniaturization of macroscopical electrolysis process is carried out to Electrolyzed Processing, at present can carry out the processing of the micro-feature of tens nanometer, the greatest problem existing without mask micro-electrochemical machining technique is that the working (machining) efficiency determining due to its serial process essence is very low.
In order to improve the efficiency without mask Electrolyzed Processing, researcher has proposed group's electrode and line electrode electrolysis machining method both at home and abroad, in this class methods processing, production method and the quality of group's electrode and line electrode have determined working ability and crudy to a great extent, and typical method comprises:
1) by LIGA technology, fine electric spark processing, micro-cutting processing preparation group electrode, electrode prepared by the method can be realized the processing in groups in group hole, and subject matter is: the fine group of large area technology for preparing electrode is complicated; In order to process high density group hole, electrode column spacing is very little, and while adopting this electrode to carry out Electrolyzed Processing, dispersion corrosion is serious; In addition, still exist tradition without being difficult to process the problem of the steep micro-structural of wall in mask Electrolyzed Processing, in order to solve dispersion corrosion problem, adopted sidewall to carry out the electrolysis of insulation processing, but preparation technology is more complicated;
2) usining metal screen printing plate carries out the processing of bundle pillar micro-structural as group's electrode, and the half tone back side and sidewall carry out depositing insulating layer, but complex process, and difformity figure need to be made different half tones;
3) adopt single line electrode, line electrode can time processing go out a groove, and compare without mask Electrolyzed Processing with tradition, line electrode is little to the dispersion corrosion of newly-generated structure, be expected to solve the problem that is difficult to process suitable to fine structure with high depth-width ratio in common minute yardstick Electrolyzed Processing, although deficiency is to improve than single post electrode working (machining) efficiency, still has the problem that working (machining) efficiency is low;
4) micro-wire is wrapped in and in specific frame, forms line-group seam electrode, the method has improved line electrode working (machining) efficiency, and shortcoming is that wire winding difficulty is large because wire is not integrated processing with framework, and the uniformity of line electrode size and spacing is difficult to assurance.
Summary of the invention
The object of this invention is to provide a kind of line electrode array structure preparation method for micro-electrochemical machining processing, solved that the working (machining) efficiency that prior art exists in micro-electrochemical machining process is low, machining accuracy not and the problem that is difficult to process high aspect ratio microstructures.
The technical solution adopted in the present invention is that a kind of line electrode array structure preparation method for micro-electrochemical machining processing, specifically comprises the following steps:
The pretreatment of step 1, metal substrate;
Step 2, make graphical masking film;
Step 3, mask electrolysis deep etching
The metal substrate of surface graphics of take carries out Electrolyzed Processing as anode, obtain the tool cathode in mask electrolysis deep etching processing and fabricating line electrode template, according to photoetching offset plate figure width and electrolytic current density, determine the electrolytic etching time, until obtain the metal grid lines array pattern of top point;
Step 4, remove backing material, remove the back material corresponding with the metal grid lines of having made, obtain the line electrode array with frame one.
The invention has the beneficial effects as follows, adopt line electrode array as tool cathode, to carry out the micro-electrochemical machining processing and fabricating of high-aspect-ratio metal micro structure, realized the efficient making of high-aspect-ratio metal micro structure array, it is characterized in that following aspect:
1) making of line electrode array structure is the method in conjunction with removal backing material by mask electrolysis deep etching, realizes the integrated manufacture of line electrode wire and framework;
2) line electrode array fabrication process comprises the following steps: the positive photoresist line strip array that obtains big space rate through gluing, exposure, development; Carry out micro-electrochemical machining deep etching, after removing photoresist, obtain having the array of metal lines of enough height; At the dorsal area corresponding with front metal line, carry out material removal process, be deep to front metal line, thereby obtain the tinsel electrode array configurations with metal edge frame one;
3) tool-electrode, with certain speed to workpiece feeding, can process micro groove array in groups, and tool-electrode or workpiece rotate to an angle and again process, and can produce metal micro-pillar array square, diamond-shaped cross-section;
4) control tool electrode, in the feeding step pitch of workpiece place plane, can be controlled the density (or width of micro-boss) of processed micro groove;
5) on tool-electrode metal wire, the feature of sharp complimentary close makes in process, the impact of newly-generated micro-structural wall to be reduced, and can further improve the steep property of the sidewall of line electrode micro-electrochemical machining processing.
Feature of the present invention also comprises:
1) the integrated processing of wire and frame, wire live width and spacing good uniformity;
2) can be according to the requirement of the dispersion corrosion of drawing up and the calculated results, mask dutycycle when mask electrolysis deep processing is made to line electrode is carried out appropriate design, make line electrode wire dispersion corrosion each other when carrying out line electrolysis microfabrication of making enough little, improve the locality of processing;
3) between tool-electrode and workpiece anode, the move toward one another of vertical direction is unrestricted, can make in theory the unrestricted micro-structural of depth-to-width ratio;
4) can the relative motion in workpiece planarization by accurate control tool electrode and workpiece anode, carry out the making of little gap high density micro structure array;
5) can, by controlling the different of the angle between tool-electrode and workpiece in twice processing, produce the metal micro structure array of different cross section shape;
6) on line electrode processing and tool-electrode line, the lower wide feature of point improves processed micro-structural sidewall degree.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of the inventive method;
Fig. 2 is the sidewall degree schematic diagram that the electrode of employing the present invention making adds man-hour;
Fig. 3 adopts traditional electrode to add the schematic diagram of sidewall degree in man-hour;
Fig. 4 is for adopting the inventive method to make the process flow diagram of square-section or diamond-shaped cross-section micro structure array.
In figure, 1. metal substrate, 2. photoresist, 3. mask plate, 4. graphical photoresist, 5. tool cathode, 6. line electrode array, 7. line electrode cross section, 8. workpiece cross section, 9. tool-electrode, 10. workpiece to be processed, 11. surface of the work groove arrays, 12. square-section micro structure arrays, 13. diamond-shaped cross-section micro structure arrays.
The specific embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
With reference to Fig. 1, the present invention is for the line electrode array structure preparation method of micro-electrochemical machining processing, and (describe mask electrolysis deep etching and in conjunction with removal backing material, prepare the technical process of line electrode), specifically comprises the following steps:
The pretreatment of step 1, metal substrate: metal substrate 1 adopts copper product, the object of processing is to make specimen surface smooth and clean dry, energy and photoresist better adhere to, concrete grammar is, on polishing machine, metal substrate 1 is carried out to polishing, make surface roughness Ra≤0.3, then use successively acetone, alcohol and washed with de-ionized water, then after drying up with nitrogen, on dryer, dry and stand-byly (see Fig. 1 a).
Step 2, for the graphical masking film of mask Electrolyzed Processing, make: masking film need to have good electrical insulating property, adopts the photoresist 2 of EPG533 model in embodiment, and idiographic flow comprises:
Front baking is toasted 10-15min by the metal substrate cleaning up 1 at 110 ℃-120 ℃, and the object of front baking is to make metal substrate surface fully dry, to increase photoresist 2 in the adhesiveness of metallic substrates;
Gluing, adopts spin-coating method to apply the thick photoresist 2(of one deck 2-5 μ m on metal substrate 1 surface and sees Fig. 1 b);
Middle baking, 100 ℃-110 ℃ of temperature, time 10-15min, the object of middle baking is the solvent of removing in photoresist 2, and photoresist 2 is solidified to a certain extent;
Exposure, covers one deck mask plate 3 at photoresist 2 outer surfaces, adopts litho machine (model is selected ABM350//NOV/DCCD) to expose, and time for exposure 8-10s(is shown in Fig. 1 c);
Develop, it is 4 ‰-6 ‰ NaOH solution (solvent is water) that developer solution is selected mass concentration, developing time is 55-65s, thereby obtains the photoresist lines figure of certain dutycycle, obtains the graphical photoresist 4(on metal substrate 1 surface after exposure imaging and sees Fig. 1 d).
Step 3, mask electrolysis deep etching: the metal substrate 1 of surface graphics of take carries out Electrolyzed Processing as anode, the tool cathode 5(obtaining in mask electrolysis deep etching processing and fabricating line electrode template is shown in Fig. 1 e), technological parameter is: it is the NaCl mixed liquor (solvent is also water) of 5%-10%NaNO3 and 5%-10% that electrolyte is selected mass concentration, and current density is 5-20A/dm 2voltage is 2-5V, and spacing is 20-30mm, and electrolytic etching carries out improving the mass transfer in deep etching in ultrasound environments, according to photoetching offset plate figure width and electrolytic current density, determine the electrolytic etching time, until obtain the metal grid lines array pattern of top point, (Fig. 1 f is before removing photoresist; Fig. 1 g is after removing photoresist).
Step 4, remove backing material (seeing Fig. 1 h): remove the back material corresponding with the metal grid lines of having made to obtain the wire array with frame one, due to wire thin (several microns to tens of microns), removal method need to guarantee not destroy wire array, preferably the method for (but being not limited to) comprises mask electrolysis, post electrolysis, the combination of Laser Processing and various ways thereof, the method of removing in the present embodiment adopts mask electrolysis (shelter and give over to frame portion), need to be according to metal substrate 1 thickness and the accurate controlled working of rate of dissolution time, through above-mentioned processing step, the line electrode array 6(that obtains wire array and frame one is shown in Fig. 1 i), .
Described electrolysis masking film obtains by the method for photoetching, and the width of masking film determines according to the requirement that suppresses dispersion corrosion.
Line electrode is realized the integrated processing of wire and frame in conjunction with back material removal process by mask electrolytic etching.Because line electrode has formed penetrating wire seam, while adopting this line electrode to carry out Electrolyzed Processing, the depth of microstructure that can process is unrestricted in theory.
The line electrode cross section that adopts the inventive method to make is triangle, this cross section metal wire adds man-hour as tool-electrode, be conducive to improve the steepness of sidewall, machined surface distance electrode is distant, dispersion corrosion is corresponding less, thereby having improved the steepness of sidewall processing, as shown in Figure 2, is that the line electrode cross section 7 of made and the line electrode of employing the present invention making carry out metal micro structure Electrolyzed Processing institute's processing work cross section 8.In conventional post electrode or line electrode process, the surface having processed is due to distance electrode near distance, in depth direction process, sidewall is all the time in dissolved state, so the sidewall finally processing is an inclined-plane, as shown in Figure 3, traditional tool-electrode 9 is the structural representation of rectangle post electrode (for contrast).
Embodiment
With reference to Fig. 4, be the application of the inventive method made electrode, adopt line electrode array of the present invention to carry out metal micro structure array processing, according to following steps, implement:
Step 1, workpiece are prepared (Fig. 4 a): to workpiece to be processed 10 surface finish, clean, dry stand-by;
Step 2, tool-electrode are prepared (Fig. 4 b): adopt above-mentioned line electrode array making method (technological principle is referring to Fig. 1) to make wire and the integrated line electrode of framework, photoresist masking film width dimensions during by control line electrode fabrication is controlled the distance between the line electrode wire of made, the impact of the mutual dispersion corrosion while making to adopt above-mentioned line electrode to carry out Electrolyzed Processing between line electrode is enough little, to improve the locality of processing;
Step 3, groove Electrolyzed Processing (Fig. 4 c): the move toward one another of vertical direction between control tool line electrode and workpiece, process sidewall, the unrestricted groove of the degree of depth, while being worked into projected depth, tool-electrode rollback, prepares to carry out next Pocket Machining;
Step 4, the controlled groove array processing of spacing: the relative motion of parallel direction between control tool electrode and workpiece, flute pitch to design, repeating step 3(Fig. 4 d again), stepping processing successively, obtain the groove array of the technological requirement degree of depth and spacing, the surface of the work groove array 11(Fig. 4 e obtaining after stepping processing);
Step 5, by tool-electrode with respect to workpiece half-twist, repeating step 3 and step 4(Fig. 4 f again), the metal micro structure array that to obtain the technological requirement degree of depth and width, cross section be rectangle, the square-section micro structure array 12(Fig. 4 h obtaining after the processing of vertical direction secondary feed);
Step 6, tool-electrode is rotated with respect to workpiece to other is arbitrarily angled, repeating step 3 and step 4(Fig. 4 g again), obtain requiring the metal micro structure array that the degree of depth and width, cross section are rhombus, i.e. diamond-shaped cross-section micro structure array 13(Fig. 4 i that the angled stepping processing of secondary feed direction and primary feed direction obtains).
Line electrode array structure preparation method for the processing of scroll saw micro-electrochemical machining of the present invention, by the line electrode array of photoetching, mask electrolysis deep etching and removal backing material formation line thickness and spacing uniformity.With respect to tradition group electrode, adopt the electrode that the inventive method is made can pass through distance between mask design control tool electrode line, thereby the corrosion of the stray electric field between control electrode lines, and the density of institute's processing micro structure is controlled by controlling feeding step pitch, thereby solved to a great extent the contradiction between graphics processing density and dispersion corrosion in the processing of group's electrode; Line electrode array is made by photoetching and mask electrolysis, line thickness, spacing high conformity; By making the angled repeatedly stepping Electrolyzed Processing of carrying out between tool-electrode and workpiece anode, cross section can be made for difform metal micro structure arrays such as square, rectangle, rhombuses, the efficient making of large depth-to-width ratio, high density, high crudy metal micro structure array can be realized.

Claims (5)

1. for a line electrode array structure preparation method for micro-electrochemical machining processing, its feature is, specifically comprises the following steps:
The pretreatment of step 1, metal substrate;
Step 2, make graphical masking film;
Step 3, mask electrolysis deep etching
The metal substrate (1) of surface graphics of take carries out Electrolyzed Processing as anode, obtain the tool cathode (5) in mask electrolysis deep etching processing and fabricating line electrode template, according to photoetching offset plate figure width and electrolytic current density, determine the electrolytic etching time, until obtain the metal grid lines array pattern of top point;
Step 4, remove backing material, remove the back material corresponding with the metal grid lines of having made, obtain the line electrode array (6) with frame one.
2. the line electrode array structure preparation method for micro-electrochemical machining processing according to claim 1, its feature is, in described step 1, metal substrate (1) adopts copper product, metal substrate (1) is carried out to polishing, make surface roughness Ra≤0.3, then use successively acetone, alcohol and washed with de-ionized water, then dry up post-drying with nitrogen.
3. the line electrode array structure preparation method for micro-electrochemical machining processing according to claim 1, its feature is, in described step 2, idiographic flow comprises:
Front baking is toasted 10-15min by the metal substrate cleaning up (1) at 110 ℃-120 ℃;
Gluing, adopts spin-coating method to apply the thick photoresist (2) of one deck 2-5 μ m on metal substrate (1) surface;
Middle baking, 100 ℃-110 ℃ of temperature, time 10-15min;
Exposure, covers one deck mask plate (3) at photoresist (2) outer surface, and exposes, time for exposure 8-10s;
Develop, it is 4 ‰-6 ‰ NaOH solution that developer solution is selected mass concentration, and developing time is 55-65s, obtains photoresist lines figure, obtains the graphical photoresist (4) on metal substrate (1) surface after exposure imaging.
4. the line electrode array structure preparation method for micro-electrochemical machining processing according to claim 1, its feature is, in described step 3, technological parameter is: it is the NaCl mixed liquor of 5%-10%NaNO3 and 5%-10% that electrolyte is selected mass concentration, and current density is 5-20A/dm 2, voltage is 2-5V, and spacing is 20-30mm, and electrolytic etching carries out in ultrasound environments.
5. the line electrode array structure preparation method for micro-electrochemical machining processing according to claim 1, its feature is, in described step 4, the preferred mask electrolysis of removal method, post electrolysis, laser processing.
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CN104384636A (en) * 2014-10-09 2015-03-04 南京航空航天大学 Method for protecting non-processed workpiece surface by utilizing passivation metal coating in electrochemical machining
CN104475893A (en) * 2014-11-04 2015-04-01 南京航空航天大学 Wire feeding micro electrochemical wire cutting process,
CN104772538A (en) * 2015-04-29 2015-07-15 常州工学院 Copper-aluminum composite micro-electrolysis electrode and preparation method for same
CN104772540A (en) * 2015-04-29 2015-07-15 常州工学院 Electrochemical machining method for copper-aluminum composite electrode surface texturing
CN104785872A (en) * 2015-04-28 2015-07-22 河南理工大学 Liquid drainage device used for electrochemical machining of interelectrode porous medium filling type mask
CN105081488A (en) * 2015-08-20 2015-11-25 南京航空航天大学 Quick controllable manufacturing method of large-area micron/nanometer texture on metal material surface
CN105127524A (en) * 2015-09-02 2015-12-09 广东工业大学 Linear electrode curved surface electrolysis electrical discharge machining system and method
CN108080782A (en) * 2018-01-02 2018-05-29 南京航空航天大学 The lateral wall insulation method of micro hole Electrolyzed Processing electrode and application
CN108796438A (en) * 2018-07-24 2018-11-13 京东方科技集团股份有限公司 A kind of preparation method of mask plate, mask plate, evaporated device
CN109128405A (en) * 2017-06-13 2019-01-04 苏州含光微纳科技有限公司 A kind of anchor fine electric spark metal electrode structure and its manufacturing method
CN110275097A (en) * 2019-06-25 2019-09-24 清华大学 Nanoscale gap spark discharge test macro and method
CN113319387A (en) * 2021-06-18 2021-08-31 南京航空航天大学 Large-scale preparation method of heat exchange enhancement microstructure
CN114769759A (en) * 2022-05-26 2022-07-22 南京航空航天大学 Method for inhibiting stray corrosion in spin-printing electrolytic machining

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CN104384636A (en) * 2014-10-09 2015-03-04 南京航空航天大学 Method for protecting non-processed workpiece surface by utilizing passivation metal coating in electrochemical machining
CN104475893A (en) * 2014-11-04 2015-04-01 南京航空航天大学 Wire feeding micro electrochemical wire cutting process,
CN104785872A (en) * 2015-04-28 2015-07-22 河南理工大学 Liquid drainage device used for electrochemical machining of interelectrode porous medium filling type mask
CN104772540B (en) * 2015-04-29 2017-05-24 常州工学院 Electrochemical machining method for copper-aluminum composite electrode surface texturing
CN104772540A (en) * 2015-04-29 2015-07-15 常州工学院 Electrochemical machining method for copper-aluminum composite electrode surface texturing
CN104772538A (en) * 2015-04-29 2015-07-15 常州工学院 Copper-aluminum composite micro-electrolysis electrode and preparation method for same
CN105081488A (en) * 2015-08-20 2015-11-25 南京航空航天大学 Quick controllable manufacturing method of large-area micron/nanometer texture on metal material surface
CN105127524A (en) * 2015-09-02 2015-12-09 广东工业大学 Linear electrode curved surface electrolysis electrical discharge machining system and method
CN105127524B (en) * 2015-09-02 2020-05-01 广东工业大学 Linear electrode curved surface electrolytic discharge machining system and method
CN109128405A (en) * 2017-06-13 2019-01-04 苏州含光微纳科技有限公司 A kind of anchor fine electric spark metal electrode structure and its manufacturing method
CN108080782A (en) * 2018-01-02 2018-05-29 南京航空航天大学 The lateral wall insulation method of micro hole Electrolyzed Processing electrode and application
CN108796438A (en) * 2018-07-24 2018-11-13 京东方科技集团股份有限公司 A kind of preparation method of mask plate, mask plate, evaporated device
CN108796438B (en) * 2018-07-24 2021-01-15 京东方科技集团股份有限公司 Mask plate preparation method, mask plate and evaporation equipment
CN110275097A (en) * 2019-06-25 2019-09-24 清华大学 Nanoscale gap spark discharge test macro and method
CN110275097B (en) * 2019-06-25 2020-09-22 清华大学 Nanoscale gap electric spark discharge test system and method
CN113319387A (en) * 2021-06-18 2021-08-31 南京航空航天大学 Large-scale preparation method of heat exchange enhancement microstructure
CN113319387B (en) * 2021-06-18 2022-04-12 南京航空航天大学 Large-scale preparation method of heat exchange enhancement microstructure
CN114769759A (en) * 2022-05-26 2022-07-22 南京航空航天大学 Method for inhibiting stray corrosion in spin-printing electrolytic machining

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