CN107177867B - Crack the layering electrocasting method of rectangular waveguide - Google Patents
Crack the layering electrocasting method of rectangular waveguide Download PDFInfo
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- CN107177867B CN107177867B CN201710315486.1A CN201710315486A CN107177867B CN 107177867 B CN107177867 B CN 107177867B CN 201710315486 A CN201710315486 A CN 201710315486A CN 107177867 B CN107177867 B CN 107177867B
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- 238000000034 method Methods 0.000 title claims abstract description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052802 copper Inorganic materials 0.000 claims abstract description 37
- 239000010949 copper Substances 0.000 claims abstract description 37
- 238000005323 electroforming Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 24
- 238000012545 processing Methods 0.000 claims abstract description 21
- 238000011161 development Methods 0.000 claims abstract description 18
- 230000003647 oxidation Effects 0.000 claims abstract description 7
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000003754 machining Methods 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 6
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 229910000906 Bronze Inorganic materials 0.000 description 3
- 239000010974 bronze Substances 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 208000029152 Small face Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010892 electric spark Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optical Integrated Circuits (AREA)
Abstract
A kind of layering electrocasting method for the rectangular waveguide that cracks, belongs to electric machining field, comprising the following steps: step 1: coating a layer photoresist (2) on substrate (1) surface；Step 2: carrying out first time exposure；Step 3: carrying out first time development；Step 4: one layer of copper (4) of electroforming；Step 5: carrying out accurate rubbing down；Step 6: coating one layer photoresist (5)；Step 7: carrying out second and expose；Step 8: carrying out second development；Step 9: carrying out surface conductance processing；Step 10: microelectrolysis being carried out to first layer copper, removes the oxidation film on surface；Step 11: electroforming second layer copper is formed electroforming device (9)；Step 12: dissolving extra photoresist, take out electroforming device (9), accurate rubbing down is carried out to surface；Step 13: cleaning electroforming device (9) obtains crack rectangular waveguide (10).The rectangular waveguide that cracks is obtained by copper electroforming twice, and machining accuracy is high, and Technological adaptability is strong.
Description
Technical field
A kind of layering electrocasting method of rectangular waveguide that cracks of the invention relates generally to eletroforming, belongs to EDM Technology
Field.
Background technique
THz wave refer to frequency 0.1THz to 10THz range, wavelength 0.03mm to 3mm range electromagnetic wave.Too
The special performance of Hertz wave is to fields such as broadband connections, radar imagery, electronic countermeasure, ELECTROMAGNETIC WEAPON, safety inspection, non-destructive testings
Far-reaching influence is brought, is had broad application prospects in national security field.Such as: Terahertz radar is relative to microwave thunder
It reaches, there are the advantages such as high resolution, strong security, anti-interference ability are prominent, gas ions penetration capacity is strong.
Metal waveguide is the common transmission line of THz low-frequency range, and wherein metal rectangular waveguide be because that can be effectively reduced absorption loss,
There is significant superiority in terms of transmission performance, and receives significant attention and pay attention to.THz frequency range metal rectangular waveguide have compared with
Small face size and biggish conveying length are typical big L/D ratio microdevices.Such as: the rectangular wave guide cavity ruler of 1THz
Very little is 254 μm of 127 μ m, and tolerance is at ± 5 μm, waveguide cavity surface roughness Ra≤0.4 μm, the minimum μ of radius of corner R≤50
m；The rectangular waveguide face size of 1.7THz is 165 μm of 83 μ m, radius of corner R≤20 μm.Terahertz metal rectangular waveguide
Precision manufactureing is extremely challenging, is always the critical issue and Pinch technology for restricting the research and development of Terahertz application system.
In recent years, domestic and international research institution proposes all Alternatives to solve metal rectangular waveguide precision manufactureing problem.
But limited by processing method, current closed Terahertz rectangular waveguide is usually semi-enclosed U-shaped by subdivision
Chamber and cover plate separate machined, U-shaped cavity and cover plate are then assembled into rectangular waveguide device after machine-shaping respectively.Foreign countries,
Britain C.E.Collins etc. successfully processes combined type rectangular metal waveguide using photoetching micro-processing technology.The U.S.
G.Narayanan etc. processes 0.345THz waveguide by numerical control milling on integrated form high precision numerical control platform on metal block
Chamber.U.S. A.Rowen etc. produces the golden rectangular waveguide of tens microns of inside dimension of 3THz using multiple layer metal stacking.State
Interior, Yan Feng etc. processes rectangular metal waveguide chamber using photoetching galvanoplastics perhaps, and waveguide cavity surface is smooth straight, substantially without processing
Fillet.Sun Yujie etc. uses sacrificial layer photoetching process, prepares the very high rectangular waveguide cavity configuration of verticality of side wall.
Rectangular waveguide crack as a kind of special rectangular waveguide, is machined with the small square hole of array arrangement on surface.With
The continuous improvement of waveguide work frequency, the small square hole size in rectangular waveguide surface that cracks accordingly reduce so that its processing difficulty
It spends higher and higher.Meanwhile requirement of the high-frequency rectangular waveguide to minimum radius of corner and surface roughness is also higher and higher, this makes
Some manufacturing process are obtained not to be available.Such as Wire EDM, electric spark, laser processing etc., all because of the intrinsic fillet mistake of tool
It cannot use greatly.Therefore, existing processing technology is difficult to meet the processing need of the following THz wave transmission symmetry slot rectangular waveguide
It asks, it is necessary to develop other processing technologies.
Summary of the invention
It is high that it is an object of that present invention to provide a kind of machining accuracies, the strong rectangular waveguide electrocasting method that cracks of Technological adaptability.
A kind of layering electrocasting method for the rectangular waveguide that cracks, the slotting structure height for the rectangular waveguide that cracks are L2, rectangular channel
Structure height is L3, it is characterised in that including following procedure: step 1. prepares core model, and core model is by understructure and superstructure two
Part forms, and wherein understructure is the small cuboid pillar array structure with a thickness of L2, and superstructure is that thickness is L3 for length
Cube structure, specifically the preparation method is as follows: step 1-1: coating the first layer photoresist that a layer thickness is L1 in substrate surface；Step
Rapid 1-2: the substrate for passing through first time overlay film in step 1-1 is placed on litho machine objective table, with first time exposure mask plate
Carry out first time exposure；Step 1-3: the substrate in step 1-2 after first time exposes is put into developer solution and carries out first
Secondary development washes and dries after development, obtains core model lower layer preliminary structure, height L1；Step 1-4: it is passed through in step 1-3
The first layer copper that the substrate surface electroforming a layer thickness crossed after developing for the first time is L1；Step 1-5: to step 1-4 resulting structures
Surface carries out accurate rubbing down, guarantee first layer copper and core model understructure with a thickness of L2；Step 1-6: it is tied obtained by step 1-5
Structure surface coats the second layer photoresist that a layer thickness is L3；Step 1-7: the substrate of second of overlay film will be passed through in step 1-6
It is placed on litho machine objective table, carries out second with second of exposure mask plate and expose；Step 1-8: will pass through in step 1-7
Substrate after second of exposure, which is put into developer solution, carries out second development, washes and dries after development, obtains core model upper layer knot
Structure；Step 1-9: covering exposure mask by the substrate surface of second development in step 1-8, to core model superstructure upper surface into
Row surface conductance processing forms one layer of conductive film；Step 1-10: microelectrolysis is carried out to first layer copper upper surface, removes surface
Oxidation film；Step 1-11: electroforming second layer copper, first layer on the copper-based plinth of first layer of oxidation film are eliminated in step 1-10
Copper and second layer copper collectively constitute electroforming device, and core model is located in electroforming device；Step 2: extra photoresist is dissolved, from substrate
Electroforming device is removed, accurate rubbing down is carried out to surface, obtains required external dimensions；Step 3: cleaning electroforming device, what is obtained is institute
The rectangular waveguide that cracks needed.
It can be with the multiple rectangular waveguides that crack of simultaneous processing on said one substrate.The rectangular waveguide that cracks passes through layering electroforming two
Layer copper directly obtains.
Invention advantage
1, currently, the processing of metal rectangular waveguide U-shaped cavity generally uses micro-milling to process.But not with working frequency
Disconnected to improve, rectangular waveguide face size accordingly reduces, and corresponding dimensional accuracy has broken through tradition machinery manufacturing limit.Another party
Face, since traditional diamond-making technique is to divide rectangular waveguide to chamber separate machined up and down, it is necessary to assure divide the faying face of chamber to have very up and down
Otherwise easily there is the mutual clamping of part, in conjunction with the problems such as not close in high flatness.In addition, being generated in tradition machinery processing
Machining stress and material stress can all cause the machining deformation of micro-structure, machine vibration, part material when micro- Milling Process
The factors such as composition and uniformity, tool wear can all influence machining accuracy and precision stability.And this method is using passing through
Two layers of bronze medal of electroforming directly obtains the rectangular waveguide that cracks, and whole process is completed on the same substrate, simplifies technical process, is not required to
Consider the influence of assembly precision.And the method uniformity of eletroforming is good, no machining stress, avoids traditional processing presence
More, the easily-deformable disadvantage of burr, ensure that the structure and required precision of the rectangular waveguide that cracks.
2, since the rectangular waveguide that cracks has the feature of high aspect ratio, and there is small square hole array in side, be difficult primary
Machine-shaping, so the rectangular waveguide that will crack in the present invention is divided into two layers to process, first time photoetching forms correspondence with photoresist
The small square column array of small square hole array, then one layer of copper of electroforming rectangular waveguide of completing to crack cracks the processing of side.Second
Secondary photoetching forms the high aspect ratio inner cavity for the rectangular waveguide that cracks with photoresist, and then one layer of copper of electroforming forms the square that completely cracks again
Shape waveguide.The advantages of photoetching, can be accurately on the graph copying to photoresist on mask plate.Meanwhile using film mulching method
Photoresist is coated, spin coating, front baking is eliminated, saves process time.Further, since photoresist is nonmetallic materials,
It can be dissolved, other metal materials will not be had an impact with organic solvent.
3, since photoresist is non-conductive, if the direct electroforming after second development, a closed square cannot be formed
Shape waveguide cavities.Therefore this method first carries out surface conductance processing to photoresist surface after second development, in photoresist
Face table forms one layer of other conductive film of submicron order, neither influences the size of inner cavity, and can make after electroforming second layer copper directly
Form closed rectangular waveguide inner cavity.
4, due to also being needed after electroforming first layer copper by other several steps ability electroforming second layer copper, in first layer
Copper surface may generate oxidation film.If direct electroforming second layer copper, will affect the binding force or even shadow between two layers of bronze medal
Ring the transmission performance for the rectangular waveguide that cracks.Therefore this method first carries out micro electricity to first layer copper in the electroforming second layer with before
Solution, removes oxide film dissolving, to improve the binding force between two layers of bronze medal, them is made to form a complete waveguide cavity.
5, the size of rectangular waveguide of in production, cracking might have the changes in demand with practical application and change.At this point,
Only need to change the thickness of the figure and photoresist on mask plate, simple and quick, Technological adaptability is strong.Meanwhile one
On substrate processing efficiency can be improved with the multiple rectangular waveguides that crack of simultaneous processing.
Detailed description of the invention
Fig. 1 coats photoresist profile figure for the first time;
Fig. 2 exposes sectional view for the first time;
Fig. 3 first time development sectional view;
Fig. 4 electroforming first layer copper sectional view;
Second of coating photoresist profile figure of Fig. 5;
Fig. 6 exposes sectional view for the second time;
Fig. 7 second development sectional view;
Fig. 8 surface conductance processing profiles figure;
Fig. 9 electroforming second layer copper sectional view;
The rectangular waveguide schematic diagram that cracks obtained after Figure 10 cleaning;
Figure label title: 1, substrate, the 2, first layer photoresist, 3, first time exposure mask plate, 4, first layer copper, 5,
Two layer photoresists, 6, second of exposure mask plate, 7, exposure mask,
9, electroforming device；10, crack rectangular waveguide.
Specific embodiment
The rectangular waveguide that cracks of required preparation is as shown in Figure 10, using following preparation process:
Step 1: coating the photoresist 2 that a layer thickness is L1 on 1 surface of substrate；
Step 2: the substrate 1 for passing through first time overlay film in step 1 being placed on litho machine objective table, is exposed with first time
Mask plate 3 carries out first time exposure；
Step 3: the substrate 1 in step 2 after first time exposes is put into progress first time development in developer solution, development
After wash and dry；
Step 4: 1 surface electroforming a layer thickness of substrate after first time develops is L1's in step 3
Copper 4；
Step 5: accurate rubbing down is carried out to the surface of copper electroforming 4 in step 4, guarantee first layer copper 4 with a thickness of L2；
Step 6: coating the photoetching that a layer thickness is L3 by 4 surface of copper of accurate rubbing down in steps of 5
Glue 5；
Step 7: the substrate 1 for passing through second of overlay film in step 6 being placed on litho machine objective table, is exposed with second
Mask plate 6 carries out second and exposes；
Step 8: the substrate 1 in step 7 after second exposes being put into developer solution and carries out second development, is developed
After wash and dry；
Step 9: carrying out surface conductance processing such as by exposure mask 7 in 1 surface cover of substrate of second development in step 8
Chemical vapor deposition, physical vapour deposition (PVD), chemical plating etc. form one layer of conductive film;
Step 10: microelectrolysis being carried out to first layer copper 4, removes the oxidation film on surface；
Step 11: eliminating electroforming second layer copper on the basis of the first layer copper 4 of oxidation film in step 10, obtain electroforming device
9；
Step 12: dissolving extra photoresist, electroforming device 9 is removed from substrate 1, accurate rubbing down is carried out to surface, is obtained
To required size；
Step 13: cleaning electroforming device 9, what is obtained is the required rectangular waveguide 10 that cracks.
Claims (2)
1. a kind of layering electrocasting method for the rectangular waveguide that cracks, the slotting structure height for the rectangular waveguide that cracks is L2, rectangular channel knot
Structure height is L3, it is characterised in that including following procedure:
Step 1. prepares core model, and core model is made of understructure and superstructure two parts, and wherein understructure is with a thickness of L2
Small cuboid pillar array structure, it be L3 is rectangular parallelepiped structure that superstructure, which is thickness, it is specific the preparation method is as follows:
Step 1-1: the first layer photoresist (2) that a layer thickness is L1 is coated on substrate (1) surface；
Step 1-2: the substrate (1) for passing through first time overlay film in step 1-1 is placed on litho machine objective table, with for the first time
Exposure mask plate (3) carries out first time exposure；
Step 1-3: the substrate (1) in step 1-2 after first time exposes is put into progress first time development in developer solution, is shown
Movie queen washes and dries, and obtains core model lower layer preliminary structure, height L1；
Step 1-4: the first layer that substrate (1) surface electroforming a layer thickness in step 1-3 after first time develops is L1
Copper (4)；
Step 1-5: accurate rubbing down is carried out to step 1-4 resulting structures surface, guarantees first layer copper (4) and core model understructure
With a thickness of L2；
Step 1-6: the second layer photoresist (5) that a layer thickness is L3 is coated in step 1-5 resulting structures surface；
Step 1-7: the substrate (1) for passing through second of overlay film in step 1-6 is placed on litho machine objective table, with second
Exposure mask plate (6) carries out second and exposes；
Step 1-8: the substrate (1) in step 1-7 after second exposes is put into developer solution and carries out second development, is shown
Movie queen washes and dries, and obtains core model superstructure；
Step 1-9: by exposure mask (7) in substrate (1) surface cover of second development in step 1-8, to core model superstructure
Upper surface carries out surface conductance processing and forms one layer of conductive film；
Step 1-10: microelectrolysis is carried out to first layer copper (4) upper surface, removes the oxidation film on surface；
Step 1-11: electroforming second layer copper on the basis of eliminating first layer copper (4) of oxidation film in step 1-10, first layer copper
(4) it is collectively constituted electroforming device (9) with second layer copper, core model is located in electroforming device (9)；
Step 2: dissolving extra photoresist, electroforming device (9) are removed from substrate (1), accurate rubbing down is carried out to surface, is obtained
Required external dimensions；
Step 3: cleaning electroforming device (9), what is obtained is the required rectangular waveguide that cracks (10).
2. a kind of layering electrocasting method of rectangular waveguide that cracks according to claim 1, it is characterised in that: in the same base
The multiple rectangular waveguides that crack of on piece simultaneous processing.
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| CN201710315486.1A CN107177867B (en) | 2017-05-08 | 2017-05-08 | Crack the layering electrocasting method of rectangular waveguide |
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| CN201710315486.1A CN107177867B (en) | 2017-05-08 | 2017-05-08 | Crack the layering electrocasting method of rectangular waveguide |
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| CN107177867A CN107177867A (en) | 2017-09-19 |
| CN107177867B true CN107177867B (en) | 2019-01-11 |
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| CN109728420B (en) * | 2019-01-03 | 2021-04-20 | 中天宽带技术有限公司 | Vibrator with hollow structure and manufacturing method thereof |
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| US20050276914A1 (en) * | 2004-06-15 | 2005-12-15 | Liu Ming-Dah | Method for manufacturing light guide plate mold cores |
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2017
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