CN104597719A - Positive photoresist-based nickel positive mold production method - Google Patents
Positive photoresist-based nickel positive mold production method Download PDFInfo
- Publication number
- CN104597719A CN104597719A CN201510015397.6A CN201510015397A CN104597719A CN 104597719 A CN104597719 A CN 104597719A CN 201510015397 A CN201510015397 A CN 201510015397A CN 104597719 A CN104597719 A CN 104597719A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- layers
- substrate
- positive
- chrome pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 132
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims abstract description 48
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 18
- 239000011651 chromium Substances 0.000 claims abstract description 18
- 238000004528 spin coating Methods 0.000 claims abstract description 16
- 238000005323 electroforming Methods 0.000 claims abstract description 15
- 238000001465 metallisation Methods 0.000 claims abstract description 10
- 230000008020 evaporation Effects 0.000 claims abstract description 6
- 238000001704 evaporation Methods 0.000 claims abstract description 6
- 230000008569 process Effects 0.000 claims description 17
- 238000006263 metalation reaction Methods 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000007747 plating Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 description 14
- 238000002360 preparation method Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229920001486 SU-8 photoresist Polymers 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000011104 metalized film Substances 0.000 description 2
- 229910001453 nickel ion Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000006088 Fotoceram Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
The embodiment of the invention relates to a positive photoresist-based nickel positive mold production method. The method comprises the following steps: evenly spin-coating the front side of a substrate with a positive photoresist; exposing the positive photoresist of the substrate by utilizing a negative mask plate of a target pattern, and developing to obtain the patterned photoresist; splash-plating chromium on the substrate with the patterned photoresist, to form a uniform chromium layer pattern; performing tackifier hexamethyldisilazane evaporation on the chromium layer pattern so as to enhance the adhesiveness of the chromium layer pattern and the photoresist, and evenly spin-coating the chromium layer pattern with the positive photoresist; exposing the photoresist on the chromium layer pattern on the substrate by utilizing the chromium layer pattern, and developing to obtain the photoresist of the chromium layer pattern; performing surface metallization on the photoresist of the chromium layer pattern; and performing metal nickel positive mold electroforming on the photoresist of the metalized the chromium layer pattern, to obtain the nickel positive mold. For the nickel positive mold, the production technology is simple and convenient, the photoresist removal is convenient, and the upwarping edges of the nickel positive mold can be avoided.
Description
Technical field
The present invention relates to micro-fluidic chip preparation field, particularly relate to a kind of nickel positive mold method for making based on positive photoresist.
Background technology
Photoetching technique is widely used in the preparation field of micro-fluidic chip, and the quality of photoetching directly has influence on the quality of preparation metal positive and micro-fluidic chip thereof, optimizes and revises photoetching process and method plays vital effect to improving the quality of products.Therefore optimize and revise photoetching process and show particularly important to preparing micro-fluidic chip accurately and fast.Thick photoresist photoetching technique is due to the existence of the phenomenons such as optical diffraction, photoetching agent pattern and substrate angle [alpha] is made to be not equal to 90 °, if when the angle [alpha] of photoetching agent pattern and substrate is not more than 90 °, the sidewall of photoetching agent pattern is difficult to or can not by surface metalation, produce discontinuous metallic film, the bottom of pattern and photoresist surface can not be conducted electricity smoothly, and then do not reach the effect of surface metalation, or the draft angle angle of the metal positive obtained after micro-electroforming is not less than 90 °, even affect follow-up microelectroforming technology, thus make the sample when injection moulding produce the problems such as edge tilting.
At present, the negative photoresists such as SU8 are at dimethyl silicone polymer (polydimethylsiloxane, widespread use in the preparation field of PDMS) micro-fluidic chip and micro-fluidic chip metal die thereof, usually be used to carry out thick resist lithography technique, the angle [alpha] of photoetching agent pattern and substrate is not less than 90 °, but there is the problems such as photoetching preparation efficiency is low, photoresist stress is large, degumming process is difficult in SU8 photoresist, affects production in enormous quantities and the application of micro-fluidic chip.
Summary of the invention
Embodiments provide a kind of nickel positive mold method for making based on positive photoresist, solve that photoetching preparation efficiency is low, degumming process is difficult, the problem that edge tilts.
For achieving the above object, this application provides a kind of nickel positive mold method for making based on positive photoresist, described method comprises:
The even spin coating positive photoresist in the front of substrate;
Utilize the positive photoresist of negativity mask plate to described substrate of target pattern to expose, after development, obtain patterned photoresist; Wherein, after development, in the photoresist region of described exposure, described substrate is exposed;
Sputter chromium on the described substrate with described patterned photoresist, forms even layers of chrome pattern;
Described substrate is placed in respectively acetone, alcohol ultrasonic cleaning, in order to remove described patterned photoresist;
Tackifier hmds evaporation is carried out to described layers of chrome pattern, in order to strengthen the adhesiveness of described layers of chrome pattern and photoresist, and on described layers of chrome pattern even spin coating positive photoresist;
Utilize described layers of chrome pattern to expose the photoresist on the described layers of chrome pattern on described substrate, after development, obtain the photoresist of layers of chrome pattern;
Surface metalation is carried out to the photoresist of described layers of chrome pattern;
Carry out the electroforming of metallic nickel formpiston by the photoresist of micro-electroforming to the described layers of chrome pattern after metallization, obtain nickel positive mold.
Preferably, described exposure specifically for: the target pattern on described negativity mask plate is copied on described positive photoresist.
Preferably, described obtain patterned photoresist after, described method also comprises: the described substrate with described patterned photoresist is put into plasma cleaning cavity, carries out plasma cleaning, in order to remove the bottom of developing regional photoresist.
Preferably, it is characterized in that, on described layers of chrome pattern after even spin coating positive photoresist, also comprise: baking process is carried out to the positive photoresist of spin coating even on described layers of chrome pattern.
Preferably, the angle angle between the sidewall of the photoresist of described layers of chrome pattern and described substrate is not less than 90 degree.
Preferably, described angle angle was adjusted by the time of described exposure.
Preferably, the draft angle of described nickel positive mold is not more than 90 degree.
Preferably, described substrate is glass or quartz material.
The nickel positive mold method for making based on positive photoresist that the embodiment of the present invention provides, utilizes the positive photoresist of negativity mask plate to described substrate of target pattern to expose, after development, obtains patterned photoresist; Sputter chromium on the described substrate with described patterned photoresist, forms even layers of chrome pattern; Even spin coating positive photoresist on described layers of chrome pattern; Utilize described layers of chrome pattern to expose the photoresist on the described layers of chrome pattern on described substrate, after development, obtain the photoresist identical with above-mentioned layers of chrome pattern; Surface metalation is carried out to the photoresist of described layers of chrome pattern; Angle angle between the sidewall of the photoresist of layers of chrome pattern and described substrate is not less than 90 degree, makes metallized film uniformity and conducts electricity very well.Carry out the electroforming of metallic nickel formpiston by the photoresist of micro-electroforming to the described layers of chrome pattern after metallization, obtain nickel positive mold, the draft angle of nickel positive mold is not more than 90 degree, avoids nickel positive mold edge and tilts.The manufacture craft of nickel positive mold is easy in addition, removes photoresist conveniently.
Accompanying drawing explanation
The nickel positive mold method for making process flow diagram based on positive photoresist that Fig. 1 provides for the embodiment of the present invention;
The nickel positive mold method for making schematic flow sheet based on positive photoresist that Fig. 2 provides for the embodiment of the present invention;
The nickel positive mold based on positive photoresist that Fig. 3 provides for the embodiment of the present invention makes scene schematic diagram.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the specific embodiment of the invention is described in further detail.
Below for the nickel positive mold method for making based on positive photoresist that Fig. 1 detailed description embodiment of the present invention provides, the nickel positive mold method for making process flow diagram based on positive photoresist that Fig. 1 provides for the embodiment of the present invention; The nickel positive mold method for making schematic flow sheet based on positive photoresist that Fig. 2 provides for the embodiment of the present invention; The nickel positive mold based on positive photoresist that Fig. 3 provides for the embodiment of the present invention makes scene schematic diagram.As shown in Figure 1,2 and 3, the method comprises the steps:
Step S101, in the front of substrate even spin coating positive photoresist;
Particularly, substrate can be glass or quartz material.Glass and quartz have excellent optical property, are conducive to using different chemical methodes to carry out surface modification to it, use fotoceram chemical etching technology microchannel directly can be processed on glass and quartz.
Photoresist is the key intermediary by photoetching technique, the microstructure on mask accurately being transferred to substrate.Photoresist has two kinds of fundamental types, and one is negative photoresist, and the polymkeric substance that cross-linking reaction forms more indissoluble before comparatively exposure occurs when exposing, and is fixed but not exposed portion is washed off after negative photoresist exposed portion development; Another kind is positive photoresist, and when exposing, polymkeric substance generation bond rupture is decomposed and becomes and more easily dissolve, and the exposed portion of positive optical cement is then washed off after development, and non-exposed part is fixed.Thus micro-fluidic chip layout on mask is transferred on photoresist layer.The feature of positive photoresist is that photoresist originally by some dissolution with solvents, when there is photolysis reactions by after suitable wavelength light irradiation, can not cut off resin polymers main chain and from the contact between chain, making it become solable matter.Therefore, when with positive glue photoetching, can obtain photoetching offset plate figure identical with reticle light-shielding pattern at substrate surface, positive photoresist resolution is higher, has better adhesiveness to some common metal surfaces.
Detailed process is fixed on a spinstand by substrate, and facing up of substrate, drops on substrate with glue head dropper by positive photoresist, and universal stage rotates and carries out whirl coating, and positive photoresist is evenly spin-coated on substrate.
Step S102, utilize the positive photoresist of negativity mask plate to described substrate of target pattern to expose, after development, obtain patterned photoresist; Wherein, after development, in the photoresist region of described exposure, described substrate is exposed;
Negativity mask plate will expose for there being the region of figure, wants printing opacity for not having the region of figure.
Described exposure specifically for: the target pattern on described negativity mask plate is copied on described positive photoresist.
Exposure can be contact exposure, proximity printing or projection exposure.The substrate applying positive photoresist is exposed, make exposed portion generation photochemical reaction and change its solubleness in developer solution, by development, show the figure corresponding to mask plate on a photoresist, obtain patterned photoresist, in the photoresist region of exposure, expose described substrate, concavely, there is the region of figure dented, do not have the region of figure constant.
Alternatively, described obtain patterned photoresist after, the described substrate with described patterned photoresist is put into plasma cleaning cavity, carries out plasma cleaning, in order to remove the bottom of developing regional photoresist.
The photoresist for shielding specifically is removed in primer process, obtains required litho pattern, and provides a clean surface for subsequent processing.Be conducive to follow-up on substrate, after sputter chromium, strengthening the layers of chrome of sputter and the adhesiveness of substrate.Often in production adopt the oxygen plasma process of removing photoresist to primer, the major control radio-frequency power that removes photoresist, remove photoresist the technological parameter such as time, oxygen pressure.
Step S103, on the described substrate with described patterned photoresist sputter chromium, form even layers of chrome pattern;
By the surface metalation means of magnetron sputtering, by there is patterned photoresist described substrate on even sputter one deck chromium, the thickness of chromium is about 100nm.
Step S104, described substrate is placed in acetone, alcohol ultrasonic cleaning respectively, in order to remove described patterned photoresist;
Particularly, in ultrasonic container, described substrate is placed in respectively acetone, alcohol ultrasonic cleaning, respectively cleans 10min, in order to remove described patterned photoresist.
Step S105, tackifier hmds evaporation is carried out to described layers of chrome pattern, in order to strengthen the adhesiveness of described layers of chrome pattern and photoresist, and on described layers of chrome pattern even spin coating positive photoresist.
Particularly, hmds (Hexamethyldisilazane is carried out to substrate, be called for short HMDS) evaporation, HMDS evaporation utilizes inert gas (such as nitrogen) to pass through substrate surface with the steam of HMDS, form thin film at substrate surface, its object is to: the micro-moisture eliminating substrate surface; The steam in air is prevented again to be adsorbed in crystal face; Increase the adhesive ability of photoresist (especially positive photoresistance) for crystal face, and then reduce to produce in developing process afterwards and start, or create the phenomenon from undercut when etching.
Alternatively, on described layers of chrome pattern after even spin coating positive photoresist, also baking process is carried out to the positive photoresist of spin coating even on described layers of chrome pattern.
Step S106, utilize described layers of chrome pattern to expose the photoresist on the described layers of chrome pattern on described substrate, after development, obtain the photoresist of layers of chrome pattern;
The detailed process of this step is identical with step 102, does not repeat them here.
Alternatively, the angle angle between the sidewall of the photoresist of described layers of chrome pattern and described substrate is not less than 90 degree.
Alternatively, described angle angle was adjusted by the time of described exposure.
Such as, the time shutter is long, and the angle angle between the sidewall of the photoresist of layers of chrome pattern and described substrate is large; Time shutter is short, and the angle angle between the sidewall of the photoresist of layers of chrome pattern and described substrate is little.
Step S107, surface metalation is carried out to the photoresist of described layers of chrome pattern;
Metallization is the process being formed layer of metal layer by various process for treating surface at nonmetallic surface, thus gives nonmetallic materials new performance.After carrying out surface metalation to the front and back of nonmetallic materials substrate, substrate is made to have some metallicities such as wear-resisting, anticorrosion.
Step S108, by micro-electroforming, the electroforming of metallic nickel formpiston is carried out to the photoresist of described layers of chrome pattern after metallization, obtain nickel positive mold.
The anode of micro-electroforming is pure nickel plate, and in micro-electroforming process, metallic nickel atom loses electronics under voltage effect, changes into nickel ion and enters in electrolytic solution.The metal level of substrate surface, as conductive layer, is coated with the substrate of metal level as negative electrode, and the metallic nickel ions in electrolytic solution moves to cathode surface and obtains electronics and change into nickle atom, and form nucleus and also grow, substrate surface after metallization piled up by crystal grain.
Substrate after metallization is placed on electroforming hood, (rectangular pulse power supply parameter, electrolyte prescription, electrolytic solution value, electrolyte temperature, stirring rate) energising deposition a period of time under certain technological parameter condition, substrate surface after metallization deposits certain thickness nickel metal layer, obtains nickel positive mold.
Alternatively, the draft angle of nickel positive mold is not more than 90 degree.The problem that after avoiding injection moulding, pattern edge tilts.
Therefore, the nickel positive mold method for making based on positive photoresist that the embodiment of the present invention provides, utilizes the positive photoresist of negativity mask plate to described substrate of target pattern to expose, after development, obtains patterned photoresist; Sputter chromium on the described substrate with described patterned photoresist, forms even layers of chrome pattern; Even spin coating positive photoresist on described layers of chrome pattern; Utilize described layers of chrome pattern to expose the photoresist on the described layers of chrome pattern on described substrate, after development, obtain the photoresist of layers of chrome pattern; Surface metalation is carried out to the photoresist of described layers of chrome pattern; Angle angle between the sidewall of the photoresist of layers of chrome pattern and described substrate is not less than 90 degree, makes metallized film uniformity and conducts electricity very well.Carry out the electroforming of metallic nickel formpiston by the photoresist of micro-electroforming to the described layers of chrome pattern after metallization, obtain nickel positive mold, the draft angle of nickel positive mold is not more than 90 degree, avoids nickel positive mold edge and tilts.The manufacture craft of nickel positive mold is easy in addition, removes photoresist conveniently.
Above-described embodiment; to the embodiment of the present invention, technical scheme and beneficial effect further describe; be understood that; the foregoing is only the embodiment of the embodiment of the present invention; be not intended to limit the present invention the protection domain of embodiment; within all spirit in the embodiment of the present invention and principle, any amendment made, equivalent replacement, improvement etc., within the protection domain that all should be included in the embodiment of the present invention.
Claims (8)
1., based on a nickel positive mold method for making for positive photoresist, it is characterized in that, described method comprises:
The even spin coating positive photoresist in the front of substrate;
Utilize the positive photoresist of negativity mask plate to described substrate of target pattern to expose, after development, obtain patterned photoresist; Wherein, after development, in the photoresist region of described exposure, described substrate is exposed;
Sputter chromium on the described substrate with described patterned photoresist, forms even layers of chrome pattern;
Described substrate is placed in respectively acetone, alcohol ultrasonic cleaning, in order to remove described patterned photoresist;
Tackifier hmds evaporation is carried out to described layers of chrome pattern, in order to strengthen the adhesiveness of described layers of chrome pattern and photoresist, and on described layers of chrome pattern even spin coating positive photoresist;
Utilize described layers of chrome pattern to expose the photoresist on the described layers of chrome pattern on described substrate, after development, obtain the photoresist of layers of chrome pattern;
Surface metalation is carried out to the photoresist of described layers of chrome pattern;
Carry out the electroforming of metallic nickel formpiston by the photoresist of micro-electroforming to the described layers of chrome pattern after metallization, obtain nickel positive mold.
2. method according to claim 1, is characterized in that, described exposure specifically for: the target pattern on described negativity mask plate is copied on described positive photoresist.
3. method according to claim 1, it is characterized in that, described obtain patterned photoresist after, described method also comprises: the described substrate with described patterned photoresist is put into plasma cleaning cavity, carry out plasma cleaning, in order to remove the bottom of developing regional photoresist.
4. method according to claim 1, is characterized in that, on described layers of chrome pattern after even spin coating positive photoresist, also comprises: carry out baking process to the positive photoresist of spin coating even on described layers of chrome pattern.
5. method according to claim 1, is characterized in that, the angle angle between the sidewall of the photoresist of described layers of chrome pattern and described substrate is not less than 90 degree.
6. method according to claim 5, is characterized in that, described angle angle was adjusted by the time of described exposure.
7. method according to claim 1, is characterized in that, the draft angle of described nickel positive mold is not more than 90 degree.
8. method according to claim 1, is characterized in that, described substrate is glass or quartz material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510015397.6A CN104597719B (en) | 2015-01-12 | 2015-01-12 | Nickel positive mold manufacture method based on positive photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510015397.6A CN104597719B (en) | 2015-01-12 | 2015-01-12 | Nickel positive mold manufacture method based on positive photoresist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104597719A true CN104597719A (en) | 2015-05-06 |
| CN104597719B CN104597719B (en) | 2016-09-14 |
Family
ID=53123595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510015397.6A Expired - Fee Related CN104597719B (en) | 2015-01-12 | 2015-01-12 | Nickel positive mold manufacture method based on positive photoresist |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104597719B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105734619A (en) * | 2016-03-03 | 2016-07-06 | 北京同方生物芯片技术有限公司 | Electric casting mold and preparation method thereof |
| CN107065432A (en) * | 2017-05-27 | 2017-08-18 | 中国电子科技集团公司第四十研究所 | A kind of method for preparing chromium plate mask plate |
| CN109164674A (en) * | 2018-08-30 | 2019-01-08 | 无锡中微掩模电子有限公司 | A kind of integrated circuit phase shifting mask manufacturing method |
| CN110676156A (en) * | 2019-10-21 | 2020-01-10 | 昆山百利合电子材料有限公司 | Photoetching semiconductor processing technology |
| CN113502510A (en) * | 2021-06-07 | 2021-10-15 | 北京保利微芯科技有限公司 | Manufacturing method of integrated micro-column array metal mold and metal mold thereof |
| CN113867104A (en) * | 2021-09-01 | 2021-12-31 | 安徽光智科技有限公司 | Preparation method of photoresist structure for Lift-off |
| CN114355736A (en) * | 2022-02-23 | 2022-04-15 | 鲁东大学 | Method for preparing micron-scale double-layer structure in one step by utilizing mask photoetching technology |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07287879A (en) * | 1994-04-15 | 1995-10-31 | Seiko Epson Corp | Production of stamper for optical recording medium |
| US20040169003A1 (en) * | 2002-10-24 | 2004-09-02 | Heon Lee | Micro-casted silicon carbide nano-imprinting stamp |
| US20040256762A1 (en) * | 2003-06-23 | 2004-12-23 | Eiichi Ito | Method for producing stamper for optical information recording medium |
| CN1621945A (en) * | 2004-12-20 | 2005-06-01 | 西安交通大学 | Method for making dimethyl silicone polymer micro flow control chip composite type optical cured resin die arrangement |
| CN103472682A (en) * | 2013-09-03 | 2013-12-25 | 南昌航空大学 | Method for preparing diffraction micro-optical elements based on mask lithography technique and injection molding |
-
2015
- 2015-01-12 CN CN201510015397.6A patent/CN104597719B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07287879A (en) * | 1994-04-15 | 1995-10-31 | Seiko Epson Corp | Production of stamper for optical recording medium |
| US20040169003A1 (en) * | 2002-10-24 | 2004-09-02 | Heon Lee | Micro-casted silicon carbide nano-imprinting stamp |
| US20040256762A1 (en) * | 2003-06-23 | 2004-12-23 | Eiichi Ito | Method for producing stamper for optical information recording medium |
| CN1621945A (en) * | 2004-12-20 | 2005-06-01 | 西安交通大学 | Method for making dimethyl silicone polymer micro flow control chip composite type optical cured resin die arrangement |
| CN103472682A (en) * | 2013-09-03 | 2013-12-25 | 南昌航空大学 | Method for preparing diffraction micro-optical elements based on mask lithography technique and injection molding |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105734619A (en) * | 2016-03-03 | 2016-07-06 | 北京同方生物芯片技术有限公司 | Electric casting mold and preparation method thereof |
| CN107065432A (en) * | 2017-05-27 | 2017-08-18 | 中国电子科技集团公司第四十研究所 | A kind of method for preparing chromium plate mask plate |
| CN109164674A (en) * | 2018-08-30 | 2019-01-08 | 无锡中微掩模电子有限公司 | A kind of integrated circuit phase shifting mask manufacturing method |
| CN110676156A (en) * | 2019-10-21 | 2020-01-10 | 昆山百利合电子材料有限公司 | Photoetching semiconductor processing technology |
| CN113502510A (en) * | 2021-06-07 | 2021-10-15 | 北京保利微芯科技有限公司 | Manufacturing method of integrated micro-column array metal mold and metal mold thereof |
| CN113502510B (en) * | 2021-06-07 | 2024-02-02 | 北京保利微芯科技有限公司 | Manufacturing method of integrated micro-column array metal mold and metal mold thereof |
| CN113867104A (en) * | 2021-09-01 | 2021-12-31 | 安徽光智科技有限公司 | Preparation method of photoresist structure for Lift-off |
| CN114355736A (en) * | 2022-02-23 | 2022-04-15 | 鲁东大学 | Method for preparing micron-scale double-layer structure in one step by utilizing mask photoetching technology |
| CN114355736B (en) * | 2022-02-23 | 2023-06-16 | 鲁东大学 | Method for preparing micron-sized double-layer structure in one step by using mask lithography technology |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104597719B (en) | 2016-09-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104597719A (en) | Positive photoresist-based nickel positive mold production method | |
| CN105448800B (en) | A kind of production method of the curved surface thin film circuit based on 3D printing technique | |
| CN101520600B (en) | Method for preparing transparent nano imprinting template based on X-ray exposure technology | |
| JP4407770B2 (en) | Pattern formation method | |
| US20020164534A1 (en) | Method for producing metal mask and metal mask | |
| CN101726990B (en) | Silicon mask used for super-diffraction photoetching with line width of below 200 nanometers and manufacturing method thereof | |
| CN105734619A (en) | Electric casting mold and preparation method thereof | |
| JP2010158805A (en) | Method of manufacturing mold for photo imprinting | |
| US20110195363A1 (en) | Layered radiation-sensitive materials with varying sensitivity | |
| US11420361B2 (en) | Imprint template, method of fabricating imprint template, apparatus for performing method of fabricating imprint template, imprint mold for fabricating an imprint template | |
| CN107065432A (en) | A kind of method for preparing chromium plate mask plate | |
| CN109179312B (en) | A kind of preparation method of pattern metal film | |
| US4489146A (en) | Reverse process for making chromium masks using silicon dioxide dry etch mask | |
| US20230194788A1 (en) | Grating, method for manufacturing grating, and optical waveguide | |
| CN104698745A (en) | Method for manufacturing size-controlled nano block | |
| KR101467633B1 (en) | Photo Film Mask including DLC pattern and Manufacturing method thereof | |
| US7320856B2 (en) | Manufacturing method of pattern formed body | |
| CN100376953C (en) | Method for manufacturing light guiding plate core | |
| JP6001987B2 (en) | Edge-enhanced phase shift mask manufacturing method and edge-enhanced phase shift mask | |
| KR20090112195A (en) | Curved mold having minute pattern and method for fablicating thereof | |
| TWI220267B (en) | Manufacturing method of transferring pattern with high aspect ratio | |
| KR20090006703A (en) | Method for manufacturing high-aspect-ratio micro structures | |
| JPH06119661A (en) | Stamper and production of stamper | |
| JPH0626246U (en) | Mask for forming a pattern on the lacquer layer by X-ray lithography | |
| CN118244575A (en) | Nanoimprint sub-plate substrate for improving adhesion of nanoimprint adhesive, preparation method thereof and nanoimprint method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180511 Address after: 100000 Beijing Haidian District 6 graduated from Tsinghua University. Patentee after: BEIJING TONGFANG OPTICAL DISC CO.,LTD. Address before: 101500 Miyun, Beijing, Miyun Economic Development Zone, 4, No. 202 Tsinghua Tongfang software information complex, west two level, 202 Patentee before: BEIJING TONGFANG BIOCHIP TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP02 | Change in the address of a patent holder |
Address after: 101500 6 floor, Huaye building, Tsinghua University, Haidian District, Beijing. Patentee after: BEIJING TONGFANG OPTICAL DISC CO.,LTD. Address before: 100000 Beijing Haidian District 6 graduated from Tsinghua University. Patentee before: BEIJING TONGFANG OPTICAL DISC CO.,LTD. |
|
| CP02 | Change in the address of a patent holder | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160914 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |