CN105731352B - Micro- disk chamber of arsenones and preparation method thereof is integrated on a kind of piece - Google Patents
Micro- disk chamber of arsenones and preparation method thereof is integrated on a kind of piece Download PDFInfo
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- CN105731352B CN105731352B CN201610116421.XA CN201610116421A CN105731352B CN 105731352 B CN105731352 B CN 105731352B CN 201610116421 A CN201610116421 A CN 201610116421A CN 105731352 B CN105731352 B CN 105731352B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
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Abstract
The embodiment of the invention discloses micro- disk chamber of integrated arsenones and preparation method thereof on a kind of piece, wherein, micro- disk chamber includes：The micro- disk and supporting construction being laminated from top to bottom；The size of micro- disk is more than the size of the supporting construction.Provided in an embodiment of the present invention upper micro- disk chamber of arsenones and preparation method thereof that integrates can improve the quality factor that the micro- disk chamber of arsenones is integrated on piece.
Description
Technical field
The present embodiments relate to the micro- disk chamber of arsenones and its making are integrated on optical technical field, more particularly to a kind of piece
Method.
Background technology
Micro- disk chamber of Whispering-gallery-mode is a kind of important micro-nano photonic device, low threshold laser, chamber photodynamics and
Bio-sensing etc. has a wide range of applications.Especially, in integrated optics field, due to mid-infrared light and nonlinear optics
Huge potential using value, the integrated optics research based on middle infrared light transmission high nonlinear coefficient material will produce to this direction
Life is greatest to benefit.
The main flow that infrared transparent material is studied in integrated optics at present is chalcogenide glass, wherein again with arsenones and selenium
Change based on arsenic.The technology of preparing of the existing micro- disk chamber of arsenones, is easy to by with oxidizing substance due to that can not solve arsenones
The problem of (including gas and liquid) corrodes, is directly grown in silicon dioxide substrates.But such structure is due to sulphur
Refractive index difference is little between change arsenic and silica, and light energy is understood some and is distributed in substrate, loss of the substrate to light
Problem can reduce the quality factor of such micro- disk chamber.
The content of the invention
The embodiment of the present invention, which provides, integrates micro- disk chamber of arsenones and preparation method thereof on a kind of piece, to solve in the prior art
Piece on integrate the problem of arsenones micro- disk chamber quality factors is relatively low.
To use following technical scheme up to this purpose, the embodiment of the present invention：
In a first aspect, the embodiments of the invention provide the micro- disk chamber of integrated arsenones on a kind of piece, including：It is laminated from top to bottom
Micro- disk and supporting construction；
The size of micro- disk is more than the size of the supporting construction.
Further, the supporting construction includes：The intermediate layer being laminated from top to bottom and supporting layer.
Further, the material of micro- disk is arsenones；The material in the intermediate layer is silica；The supporting layer
Material be silicon.
Further, micro- disk be shaped as cylinder or truncated cone-shaped；
The intermediate layer is shaped as cylinder；
The supporting layer is shaped as truncated cone-shaped.
Further, the center at the center of the supporting layer, the center in the intermediate layer and micro- disk is straight in same
On line, and the supporting layer, the intermediate layer and micro- disk are integrated on silicon chip.
Further, the thickness of micro- disk is more than or equal to 0.5 micron, and less than or equal to 2 microns.
Further, the diameter of micro- disk upper surface is more than or equal to 20 microns, and less than or equal to 100 microns.
Further, the thickness in the intermediate layer is more than or equal to 0.2 micron, and less than or equal to 1 micron.
Second aspect, the preparation method that the embodiment of the present invention additionally provides a kind of micro- disk chamber as described in relation to the first aspect, bag
Include：
Commercial silica piece is provided；
Vulcanization arsenic layer is formed on the titanium dioxide silicon chip；
The photoresist of spin coating first on the vulcanization arsenic layer, and be exposed, develop, form the first photoresist sub-block；
The vulcanization arsenic layer of remaining area in etching vulcanization arsenic layer in addition to the first photoresist sub-block region, shape
Into at least one micro- disk；
Remove remaining first photoresist；
The photoresist of spin coating second, and carry out alignment again on the structure after getting rid of photoresist, form the second light
Photoresist sub-block, and the second photoresist sub-block surrounds micro- disk；
The silica of remaining area in etching silicon dioxide layer in addition to the second photoresist sub-block region
Layer, form silica sub-block；
The silicon of remaining area in silicon chip in addition to the silica sub-block region is performed etching, forms support
Layer；
The edge of silica sub-block is performed etching, formed intermediate layer so that the size of micro- disk be more than it is described in
The size of interbed；
Remove remaining second photoresist.
Provided in an embodiment of the present invention above integrates micro- disk chamber of arsenones and preparation method thereof, by the way that the size of micro- disk is set
The size more than supporting construction is set to, micro- disk is realized and vacantly sets, and then the optical mode being strapped in micro- disk will not be by
The influence of supporting construction, so as to improve the quality factor that the micro- disk chamber of arsenones is integrated on piece, and then it can improve on piece and collect
Into performance of the micro- disk chamber of arsenones on optics.
Brief description of the drawings
By reading the detailed description made to non-limiting example made with reference to the following drawings, of the invention is other
Feature, objects and advantages will become more apparent upon：
Fig. 1 is a kind of section view signal of implementation of the provided in an embodiment of the present invention micro- disk chamber of upper integrated arsenones
Figure.
Fig. 2 is the schematic top plan view that micro- disk in the micro- disk chamber of arsenones is integrated on the piece that Fig. 1 is provided.
Fig. 3 is the schematic top plan view that the intermediate layer in the micro- disk chamber of arsenones is integrated on the piece that Fig. 1 is provided.
Fig. 4 is the schematic top plan view that the supporting layer in the micro- disk chamber of arsenones is integrated on the piece that Fig. 1 is provided.
Fig. 5 is the section view signal of another implementation of the provided in an embodiment of the present invention micro- disk chamber of upper integrated arsenones
Figure.
Fig. 6 is the schematic top plan view that micro- disk in the micro- disk chamber of arsenones is integrated on the piece that Fig. 5 is provided.
Fig. 7 is the normalization transmission spectrum schematic diagram of the provided in an embodiment of the present invention micro- disk chamber of upper integrated arsenones.
Fig. 8 is the schematic flow sheet of the preparation method of the provided in an embodiment of the present invention micro- disk chamber of upper integrated arsenones.
Fig. 9 A are the schematic cross-sectional views that step forms silicon dioxide layer on silicon chip in Fig. 8.
Fig. 9 B are the schematic cross-sectional views that step forms vulcanization arsenic layer on titanium dioxide silicon chip in Fig. 8.
Fig. 9 C are the schematic cross-sectional views of step photoresist of spin coating first on vulcanization arsenic layer in Fig. 8.
Fig. 9 D are that step is exposed, developed in Fig. 8, form the schematic cross-sectional view of the first photoresist sub-block.
Fig. 9 E are the remaining areas in step etching vulcanization arsenic layer in addition to the first photoresist sub-block region in Fig. 8
Vulcanize arsenic layer, form the schematic cross-sectional view of at least one micro- disk.
Fig. 9 F are the schematic cross-sectional views that step removes remaining first photoresist in Fig. 8.
Fig. 9 G are that step on the structure after getting rid of photoresist show again by the section view of the photoresist of spin coating second in Fig. 8
It is intended to.
Fig. 9 H are that step carries out alignment in Fig. 8, form the schematic cross-sectional view of the second photoresist sub-block.
Fig. 9 I are the remaining areas in step etching silicon dioxide layer in addition to the second photoresist sub-block region in Fig. 8
Silicon dioxide layer, formed silica sub-block schematic cross-sectional view.
Fig. 9 J are that step is carved to the silicon of the remaining area in silicon chip in addition to silica sub-block region in Fig. 8
Erosion, form the schematic cross-sectional view of supporting layer.
Fig. 9 K are that step performs etching to the edge of silica sub-block in Fig. 8, form the schematic cross-sectional view in intermediate layer.
Fig. 9 L are the schematic cross-sectional views that step removes remaining second photoresist in Fig. 8.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention, rather than limitation of the invention.It also should be noted that in order to just
Part related to the present invention rather than full content are illustrate only in description, accompanying drawing.
Fig. 1 is a kind of section view signal of implementation of the provided in an embodiment of the present invention micro- disk chamber of upper integrated arsenones
Figure.As shown in figure 1, the provided in an embodiment of the present invention upper integrated micro- disk chamber of arsenones includes：Supporting construction 101 and micro- disk 102.
Wherein, micro- disk 102 is located on supporting construction 101, and the size of micro- disk 102 is more than the size of supporting construction 101.
The provided in an embodiment of the present invention micro- disk chamber of upper integrated arsenones, by the way that micro- disk 102 to be sized to be more than
The size of supporting construction 101, realize micro- disk 102 and vacantly set, and then the optical mode being strapped in micro- disk 102 will not be by
The influence of supporting construction 101, so as to improve the quality factor that the micro- disk chamber of arsenones is integrated on piece, and then it can improve on piece
Integrated performance of the micro- disk chamber of arsenones on optics.
As shown in figure 1, supporting construction 101 can include：Intermediate layer 103 and supporting layer 104.Wherein, intermediate layer 103 is located at
The top of supporting layer 104.
Wherein, the material of micro- disk 102 can be arsenones；The material in intermediate layer 103 can be silica；Supporting layer
104 material can be silicon.
Fig. 2 is the schematic top plan view that micro- disk in the micro- disk chamber of arsenones is integrated on the piece that Fig. 1 is provided.Such as Fig. 1 and Fig. 2 institutes
Show, the shape of micro- disk 102 can be cylinder.The thickness of micro- disk 102 can be more than or equal to 0.5 micron, and less than or equal to 2
Micron.The diameter of micro- disk 102 can be more than or equal to 20 microns, and less than or equal to 100 microns.
Fig. 3 is the schematic top plan view that the intermediate layer in the micro- disk chamber of arsenones is integrated on the piece that Fig. 1 is provided.Such as Fig. 1 and Fig. 3 institutes
Show, the shape in intermediate layer 103 can be cylinder.The thickness in intermediate layer 103 can be more than or equal to 0.2 micron, and be less than or
Equal to 1 micron.
Fig. 4 is the schematic top plan view that the supporting layer in the micro- disk chamber of arsenones is integrated on the piece that Fig. 1 is provided.Such as Fig. 1 and Fig. 4 institutes
Show, the shape of supporting layer 104 can be truncated cone-shaped.
As shown in figure 1, the center at the center of supporting layer 104, the center in intermediate layer 103 and micro- disk 102 can be in same
On straight line line A-A.
In addition, supporting layer 104, intermediate layer 103 and micro- disk 102 can be integrated in (not shown) on silicon chip.
Fig. 5 is the section view signal of another implementation of the provided in an embodiment of the present invention micro- disk chamber of upper integrated arsenones
Figure.As shown in Figure 1 and Figure 5, from being integrated on the piece shown in Fig. 1 unlike the micro- disk chamber of arsenones, sulphur is integrated on the piece shown in Fig. 5
That changes the micro- disk 102 of arsenic is shaped as truncated cone-shaped.Wherein, the diameter of micro- upper surface of disk 102 can be more than or equal to 20 microns, and be less than
Or equal to 100 microns.
Fig. 6 is the schematic top plan view that micro- disk in the micro- disk chamber of arsenones is integrated on the piece that Fig. 5 is provided.Because shown in Fig. 1
Micro- disk 102 in the micro- disk chamber of arsenones is integrated on piece is shaped as cylinder, is integrated on the piece shown in Fig. 5 in the micro- disk chamber of arsenones
Micro- disk 102 be shaped as truncated cone-shaped, therefore, as shown in Fig. 6 and Fig. 2, integrated on the piece shown in Fig. 1 in the micro- disk chamber of arsenones
The top view of micro- disk 102 is different with the top view of the micro- disk 102 integrated on the piece shown in Fig. 5 in the micro- disk chamber of arsenones.Because Fig. 1
Arsenones are integrated on the piece shown in intermediate layer 103 and supporting layer 104 and Fig. 5 on the piece shown in the micro- disk chamber of integrated arsenones
Intermediate layer 103 and supporting layer 104 in micro- disk chamber is identical, therefore, in being integrated on the piece shown in Fig. 5 in the micro- disk chamber of arsenones
The top view of interbed 103 and supporting layer 104 as shown in Figure 3 and Figure 4, will not be repeated here.
Fig. 7 is the normalization transmission spectrum schematic diagram of the provided in an embodiment of the present invention micro- disk chamber of upper integrated arsenones.Wherein,
The radius of micro- disk in the micro- disk chamber utilized in Fig. 7 is 60 microns.As shown in fig. 7, abscissa is frequency detuning/GHz, indulges and sit
It is designated as normalized transmittance.As shown in Figure 7：The intrinsic quality factor Q of micro- disk chamber provided in an embodiment of the present invention0Reachable 8.4 ×
105。
Fig. 8 is the schematic flow sheet of the preparation method of the provided in an embodiment of the present invention micro- disk chamber of upper integrated arsenones.Fig. 8
The preparation method shown, which is used to make, integrates the micro- disk chamber of arsenones on the piece of the above embodiment of the present invention offer.As shown in figure 8, this
The preparation method of the micro- disk chamber of arsenones is integrated on the piece that inventive embodiments provide to be included：
Step 701, provide commercial silica piece.
The commercial silica piece that this step 701 provides is to form layer of silicon dioxide layer on the surface of silicon chip to obtain.
Its making step may include：Silicon chip is provided；Silicon dioxide layer is formed on silicon chip.
Fig. 9 A are the schematic cross-sectional views that step forms silicon dioxide layer on silicon chip in Fig. 8.As shown in Figure 9 A, in silicon chip
Silicon dioxide layer 802 is formed on 801.
Formed in this step 701 technique that is utilized of silicon dioxide layer 802 can be thermal oxidation technology or wait from
Daughter enhancing chemical vapour deposition technique (PEVCD, Plasma Enhanced Chemical Vapor Deposition).
The thickness of the silicon dioxide layer 802 formed in this step 701 can be designed according to being actually needed, such as：0.2
- 1 micron of micron, the specific thickness of silicon dioxide layer 802 does not limit herein.
It should be noted that after providing silicon chip, before forming silicon dioxide layer on silicon chip, can also include：It is right
Silicon chip 801 is cleaned, dried, to ensure the cleannes on the surface of silicon chip 801.
Step 702, vulcanization arsenic layer is formed on titanium dioxide silicon chip.
Fig. 9 B are the schematic cross-sectional views that step forms vulcanization arsenic layer on titanium dioxide silicon chip in Fig. 8.As shown in Figure 9 B, exist
Vulcanization arsenic layer 803 is formed on silicon dioxide layer 802.
It can be vacuum evaporation deposition technique or pulse that the technique that vulcanization arsenic layer 803 is utilized is formed in this step 702
Laser deposition technique.
It should be noted that after step 701, before step 702, can also include：Silicon chip 801 is cleaned, dried
It is dry, to ensure the cleannes on the surface of silicon chip 801.After step 702, it can also include：The structure that step 702 obtains is moved back
Fire processing, to improve the compactness for vulcanizing arsenic layer 803.
Step 703, the photoresist of spin coating first on vulcanization arsenic layer, and be exposed, develop, form the first photoetching gluon
Block.
Fig. 9 C are the schematic cross-sectional views of step photoresist of spin coating first on vulcanization arsenic layer in Fig. 8.As shown in Figure 9 C, exist
Vulcanize the first photoresist of spin coating 804 on arsenic layer 803.
Fig. 9 D are that step is exposed, developed in Fig. 8, form the schematic cross-sectional view of the first photoresist sub-block.As shown in 8D,
Using photoetching technique, after being exposed, developing, by the pattern transfer on mask plate to the first photoresist, the first photoetching is formed
Gluon block 805.
It should be noted that the shape of mask plate used in this step 703 can be circle.The size of mask plate can
It is actually needed and is designed with basis, such as：10 microns -100 microns, the specific size of mask plate does not limit herein.
After step 702, it can also include before step 703：The structure obtained to step 702 clean at drying
Reason, to ensure the cleannes on surface.
The arsenones of remaining area in step 704, etching vulcanization arsenic layer in addition to the first photoresist sub-block region
Layer, form at least one micro- disk.
Fig. 9 E are the remaining areas in step etching vulcanization arsenic layer in addition to the first photoresist sub-block region in Fig. 8
Vulcanize arsenic layer, form the schematic cross-sectional view of at least one micro- disk.As shown in fig. 9e, photoresist block effect under, etching liquid
Body (or gas) can only etch the remaining area in addition to the region of the first photoresist sub-block 805 in vulcanization arsenic layer from top to bottom
Vulcanization arsenic layer, form at least one micro- disk 806.
In this step 704, the method that etching vulcanization arsenic layer is utilized can be：Using containing ammonia liquid carry out wet etching or
Person carries out dry etching using gases such as fluoroforms.
It is understood that in etching process, ideally micro- disk 806 will not be caused to etch.But actual feelings
Under condition, because etch liquids and gas are in addition to longitudinal diffusion, horizontal proliferation also be present, so can cause on micro- disk 806
The inconsistent situation of the etching depth of edge and lower edge, now, the structure of formation is the structure shown in Fig. 5.
It should be noted that micro- disk 806 herein is micro- disk 102 in Fig. 1 and Fig. 5.
Step 705, remove remaining first photoresist.
Fig. 9 F are the schematic cross-sectional views that step removes remaining first photoresist in Fig. 8.As shown in fig. 9f, this step 705
In there is no the first photoresist in obtained structure.
Step 706, the photoresist of spin coating second, and carry out alignment, shape again on the structure after getting rid of photoresist
Into the second photoresist sub-block, and the second photoresist sub-block surrounds micro- disk.
Fig. 9 G are that step on the structure after getting rid of photoresist show again by the section view of the photoresist of spin coating second in Fig. 8
It is intended to.As shown in fig. 9g, the second photoresist of spin coating 807 again on the structure after getting rid of photoresist.Wherein, the second light
Photoresist 807 not only covers micro- disk 806, also covers the silica 802 between two neighboring micro- disk 806.
Fig. 9 H are that step carries out alignment in Fig. 8, form the schematic cross-sectional view of the second photoresist sub-block.As shown in Fig. 9 H, lead to
Alignment process is crossed, forms the second photoresist sub-block 808.Wherein, the second photoresist sub-block 808 surrounds micro- disk 806.
It should be noted that micro- disk 806 is surrounded to the second photoresist sub-block 808, then：Second photoresist sub-block 808 is not
The upper surface of micro- disk 806 is only covered, also surrounds the side of micro- disk 806 one week.In addition, the shape of the second photoresist sub-block 808 should
It is identical with the shape of micro- disk 806.And second the radius of photoresist sub-block 808 can be bigger than the diameter of micro- disk 806 20 microns, and
The center of circle of two photoresist sub-blocks 808 and the center of circle of micro- disk 806 can be concentric.
The dioxy of remaining area in step 707, etching silicon dioxide layer in addition to the second photoresist sub-block region
SiClx layer, form silica sub-block.
Fig. 9 I are the remaining areas in step etching silicon dioxide layer in addition to the second photoresist sub-block region in Fig. 8
Silicon dioxide layer, formed silica sub-block schematic cross-sectional view.As shown in figure 91, the second photoetching is removed in etching silicon dioxide
The silicon dioxide layer of remaining area outside the region of gluon block 808, form silica sub-block 809.The knot now formed
In structure, the second photoresist sub-block 808 and silica sub-block 809 form the clad of micro- disk 806.
The technique that etching silicon dioxide layer is utilized in this step 707 can be wet etching, and the liquid utilized can be with
It is hydrofluoric acid solution.
Step 708, the remaining silicon that silica sub-block region is removed in silicon chip is performed etching, form supporting layer.
Fig. 9 J are that step performs etching to the remaining silicon that silica sub-block region is removed in silicon chip in Fig. 8, are formed
The schematic cross-sectional view of supporting layer.As shown in Fig. 9 J, the remaining silicon in silicon chip in addition to silica sub-block region is entered
Row etching, forms supporting layer 810.The supporting layer 810 being here formed as is the supporting layer 104 in Fig. 1 and Fig. 5.
It can be dry etch process that the technique that silicon is utilized is etched in this step 708, or wet-etching technology,
The etching material utilized can be sulfur hexafluoride.
It should be noted that due in step 707 second photoresist sub-block 808 and silica sub-block 809 form micro- disk
806 clad, therefore, in this step 708 during etching silicon dioxide, the etching to micro- disk 806 will not be caused.
Step 709, the edge to silica sub-block perform etching, and intermediate layer are formed, so that during the size of micro- disk is more than
The size of interbed.
Fig. 9 K are that step performs etching to the edge of silica sub-block in Fig. 8, form the section view signal in intermediate layer 811
Figure.The intermediate layer 811 being here formed as is the intermediate layer 103 shown in Fig. 1 and Fig. 5.
This step 709 can be performed etching using hydrofluoric acid to the edge of silica sub-block.
It should be noted that due in step 707 second photoresist sub-block 808 and silica sub-block 809 form micro- disk
806 clad, therefore, in this step 709 during etching silicon dioxide sub-block, the etching to micro- disk 806 will not be caused.
Step 710, remove remaining second photoresist.
Fig. 9 L are the schematic cross-sectional views that step removes remaining second photoresist in Fig. 8.As shown in Fig. 9 K, step 710
To structure in there is no the second photoresist.
It should be noted that in the structure shown in Fig. 9 L, cut along line B-B, the knot shown in Fig. 1 can be obtained
Structure.
The preparation method of the provided in an embodiment of the present invention upper integrated micro- disk chamber of arsenones, by by the size of micro- disk 806
The size of supporting construction (supporting construction includes supporting layer 810 and the intermediate layer 811 being laminated from bottom to top) is set greater than, is realized
Micro- disk 806 is vacantly set, and then the optical mode being strapped in micro- disk 806 will not be supported the influence of structure, so as to
The quality factor that the micro- disk chamber of arsenones is integrated on piece is enough improved, and then can improve and the micro- disk chamber of arsenones is integrated on piece in optics device
Performance on part.In addition, the preparation method of the provided in an embodiment of the present invention micro- disk chamber of upper integrated arsenones integrates with traditional
Circuit technology is mutually compatible, has the advantages of simple to operate, repetitive rate is high and is easily integrated.
Pay attention to, above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious changes,
Readjust and substitute without departing from protection scope of the present invention.Therefore, although being carried out by above example to the present invention
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
Other more equivalent embodiments can be included, and the scope of the present invention is determined by scope of the appended claims.
Claims (3)
1. the micro- disk chamber of arsenones is integrated on a kind of piece, it is characterised in that including：The micro- disk and supporting construction being laminated from top to bottom；
The size of micro- disk is more than the size of the supporting construction, and micro- disk is vacantly set relative to the supporting construction；
The material of micro- disk is arsenones；The thickness of micro- disk is more than or equal to 0.5 micron, and less than or equal to 2 microns；
The supporting construction includes intermediate layer and the supporting layer being laminated from top to bottom；The material in the intermediate layer is silica；
The thickness in the intermediate layer is more than or equal to 0.2 micron, and less than or equal to 1 micron；
The material of the supporting layer is silicon；
Micro- disk is shaped as cylinder or truncated cone-shaped；The intermediate layer is shaped as cylinder；The shape of the supporting layer
Shape is truncated cone-shaped；The center at the center of the supporting layer, the center in the intermediate layer and micro- disk on same straight line, and
The supporting layer, the intermediate layer and micro- disk are integrated on silicon chip.
2. micro- disk chamber according to claim 1, it is characterised in that it is micro- that the diameter of micro- disk upper surface is more than or equal to 20
Rice, and less than or equal to 100 microns.
3. the preparation method of the micro- disk chamber of arsenones is integrated on a kind of piece as claimed in claim 1 or 2, it is characterised in that including：
Commercial silica piece is provided；
Vulcanization arsenic layer is formed on the titanium dioxide silicon chip；
The photoresist of spin coating first on the vulcanization arsenic layer, and be exposed, develop, form the first photoresist sub-block；
The vulcanization arsenic layer of remaining area in etching vulcanization arsenic layer in addition to the first photoresist sub-block region, is formed extremely
A few micro- disk；
Remove remaining first photoresist；
The photoresist of spin coating second, and carry out alignment again on the structure after getting rid of photoresist, form the second photoresist
Sub-block, and the second photoresist sub-block surrounds micro- disk；
The silicon dioxide layer of remaining area in etching silicon dioxide layer in addition to the second photoresist sub-block region, shape
Into silica sub-block；
The silicon of remaining area in silicon chip in addition to the silica sub-block region is performed etching, forms supporting layer；
The edge of silica sub-block is performed etching, intermediate layer is formed, so that the size of micro- disk is more than the intermediate layer
Size；
Remove remaining second photoresist.
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| CN109799002B (en) * | 2019-03-21 | 2020-07-10 | 中山大学 | All-optical tuning temperature sensor and preparation method thereof |
| CN110212078B (en) * | 2019-06-14 | 2020-10-27 | 厦门大学 | Electric injection microdisk resonant cavity light-emitting device and preparation method thereof |
| CN111103740B (en) * | 2019-11-19 | 2021-03-30 | 中山大学 | Batch preparation method of high-quality factor chalcogenide suspended microdisk |
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| CN103708405A (en) * | 2013-11-08 | 2014-04-09 | 南京大学 | On-chip large-dig-angle silicon oxide micro-disc resonant cavity and manufacturing method for same |
| CN104101945A (en) * | 2014-07-23 | 2014-10-15 | 宁波屹诺电子科技有限公司 | Horizontal slit optical waveguide based microdisk resonant cavity and production method thereof |
| CN104556691B (en) * | 2015-01-16 | 2017-02-22 | 浙江大学 | Optical micro-cavity based on tellurate glass and preparation method of optical micro-cavity |
| CN104868351B (en) * | 2015-04-27 | 2018-08-03 | 清华大学 | A method of adjusting Whispering-gallery-mode microcavity resonant frequency |
| CN105337168A (en) * | 2015-10-16 | 2016-02-17 | 南京邮电大学 | Optical pumping nitride echo wall laser performing emission in single direction and preparation method thereof |
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2016
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