CN104868351B - A method of adjusting Whispering-gallery-mode microcavity resonant frequency - Google Patents
A method of adjusting Whispering-gallery-mode microcavity resonant frequency Download PDFInfo
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Abstract
The present invention provides a kind of method adjusting Whispering-gallery-mode microcavity resonant frequency, includes the following steps：One Whispering-gallery-mode microcavity is provided, the resonant wavelength of the Whispering-gallery-mode microcavity is tested, and selects the pattern of the Whispering-gallery-mode microcavity；Determine a target wavelength；And hot reflow treatment is carried out to realize the resonant frequency for adjusting the Whispering-gallery-mode microcavity to the Whispering-gallery-mode microcavity using a hot reflux, the hot reflux includes a laser, the laser projects laser irradiation on the Whispering-gallery-mode microcavity, which specifically includes：The time that fixed heat flows back gradually increases the output power of the laser simultaneously, or the output power of the fixed laser is stepped up the time that heat flows back simultaneously；And the variation of observation Whispering-gallery-mode microcavity resonant wavelength, until the absolute value of the difference of the target wavelength and resonant wavelength of the Whispering-gallery-mode microcavity is less than the line width of the pattern of the Whispering-gallery-mode microcavity.
Description
Technical field
The invention belongs to micronano optical devices fields, more particularly to a kind of flowed back by low-power heat to adjust Whispering-gallery-mode
The method of microcavity resonant frequency.
Background technology
Whispering-gallery-mode microcavity is one of high-quality optical microcavity most important at present, that research is the most deep.In the Echo Wall
In mode optical micro-cavity, just constantly by being totally reflected in microcavity internal communication.Whispering-gallery-mode microcavity generally comprises microballoon
Chamber（microsphere）, micro- disk chamber（microdisk）, micro- core annulus microcavity（microtoroid）Deng.Whispering-gallery-mode microcavity
Surface is very smooth, the material used（It is often silica）It is smaller to the absorption of light, so the service life of photon is very long, quality
Factor Q is very high（Up to 108More than）.In addition, the mode volume of this type microcavity（The effective volume of optical field distribution）Nor
It is often small, under identical incident power, the intensity bigger of intracavitary light field.Based on the above advantage, echo wall mode optical micro-cavity has
It many extremely important and is widely applied.
Resonant frequency is one of optical microcavity very important parameter.It is micro-nano light to carry out regulating and controlling simple and efficiently to it
Important one of the research topic of sub- devices field.Referring to Fig. 1, Fig. 1 is the mobile schematic diagram of resonant frequency in an optical microcavity,
It can be seen from the figure that after optical microcavity resonant frequency is adjusted, the drift to the right of entire lorentzian curve can be made, represented
Resonant wavelength increases（Resonant frequency reduces）.
The control measures of the existing resonant frequency to Whispering-gallery-mode microcavity are mainly that temperature is adjusted.However, temperature tune
There are following defects for section：First, when heating temperature is excessively high, when the excessive temperature differentials of microcavity and ambient enviroment, whole system meeting
Become highly unstable, the variation of environment may generate prodigious disturbance to the resonant frequency of microcavity, seriously affect and restrict
Its practical application；Secondly, it is difficult to realize that the adjusting to single microcavity, temperature in use adjust usual when method regulates and controls target cavity
The temperature that can influence neighbouring sample changes its relevant parameter, generates counter productive；Finally, experimental provision is complex, temperature tune
Section usually needs by complicated processing technology or additionally adds many controller units, it is difficult to and it is integrated, and be highly detrimental to
Application in daily production and life.It is, thus, sought for a kind of simple and efficient method regulates and controls Whispering-gallery-mode microcavity
Resonant frequency.
Invention content
In view of this, it is necessory to provide a kind of method adjusting Whispering-gallery-mode microcavity resonant frequency, this method can be with
The shortcomings that overcoming existing temperature to adjust.
A method of it is flowed back by low-power heat and adjusts Whispering-gallery-mode microcavity resonant frequency, included the following steps：S1：
One Whispering-gallery-mode microcavity is provided, the resonant wavelength of the Whispering-gallery-mode microcavity is tested, and selects the Whispering-gallery-mode microcavity
Pattern；S2：Determine a target wavelength；And S3：Hot reflux is carried out to the Whispering-gallery-mode microcavity using a hot reflux
It handles to realize that the resonant frequency for adjusting the Whispering-gallery-mode microcavity, the hot reflux include a laser, the laser
Laser irradiation is projected on the Whispering-gallery-mode microcavity, which specifically includes：The time of fixed heat reflux
The output power of the laser is gradually increased simultaneously, or the output power of the fixed laser is stepped up heat time simultaneously
The time of stream；And the variation of observation Whispering-gallery-mode microcavity resonant wavelength, until the target wave of the Whispering-gallery-mode microcavity
The long absolute value with the difference of resonant wavelength is less than the line width of the pattern of the Whispering-gallery-mode microcavity.
Compared with prior art, provided by the invention flowed back by low-power heat adjusts Whispering-gallery-mode microcavity resonance frequency
The method of rate has the following advantages：First, resonant wavelength is adjusted by changing the geometry of Whispering-gallery-mode microcavity, in reality
Keep microcavity temperature and ambient temperature essentially identical in the application of border, influence of the greatly less ambient enviroment to microcavity, disturbance rejection
Property is very strong, and then keeps whole system highly stable；Second, using the method for heat reflux, laser can be allowed to exist by lens focus
Single target microcavity is adjusted for single target microcavity, is not had an impact to other microcavitys；Third, this method is fully sharp
The resonant frequency of microcavity is adjusted with the thermal reflow process in Whispering-gallery-mode microcavity preparation process, required equipment is simple, is not necessarily to
Additional control device.
Description of the drawings
Fig. 1 is an optical microcavity resonant frequency shift schematic diagram.
Fig. 2 is the dimensional structure diagram of micro- core annulus microcavity provided in an embodiment of the present invention.
Fig. 3 is the manufacturing process schematic diagram of micro- core annulus microcavity provided in an embodiment of the present invention.
Fig. 4 is the schematic diagram that micro- core annulus microcavity provided in an embodiment of the present invention is coupled with fiber optics.
Light path when Fig. 5 is test provided in an embodiment of the present invention micro- core annulus microcavity resonant wavelength and circuit connection signal
Figure.
Fig. 6 is thermal reflow process schematic diagram in micro- core annulus microcavity provided in an embodiment of the present invention.
Fig. 7 is the hot return time of fixation provided in an embodiment of the present invention, gradually increases the output work of carbon dioxide laser
When rate, the variation diagram of micro- core annulus microcavity resonant wavelength.
Fig. 8 is fixed carbon dioxide laser output power provided in an embodiment of the present invention at red shift area, increases heat and returns
Flow time, micro- core annulus microcavity resonant wavelength variation diagram.
Fig. 9 is fixed carbon dioxide laser output power provided in an embodiment of the present invention at blue shift area, increases heat and returns
Flow time, micro- core annulus microcavity resonant wavelength variation diagram.
Main element symbol description
| Silicon chip | 1 |
| Silicon dioxide layer | 2 |
| Photoresist | 3 |
| Micro- disk chamber | 4 |
| Micro- core annulus microcavity | 5 |
| Signal generator | 6,11 |
| Tunable laser | 7 |
| Oscillograph | 8 |
| Polarization Controller | 9 |
| Photodetector | 10 |
| Controller | 12 |
| Laser | 13 |
| Lens | 14 |
Following specific implementation mode will be further illustrated the present invention in conjunction with above-mentioned attached drawing.
Specific implementation mode
Below in conjunction with the accompanying drawings and the specific embodiments, to adjusting Whispering-gallery-mode microcavity resonant frequency provided by the invention
Method is described in further detail.
The present invention provides a kind of method adjusting Whispering-gallery-mode microcavity resonant frequency, includes the following steps：
S1：One Whispering-gallery-mode microcavity is provided, the resonant wavelength of the Whispering-gallery-mode microcavity is tested, and selects the Echo Wall
The pattern of pattern microcavity；
S2：Determine a target wavelength；And
S3：Hot reflow treatment is carried out to the Whispering-gallery-mode microcavity using a hot reflux and adjusts described return to realize
The resonant frequency of sound wall pattern microcavity, the hot reflux include a laser, which projects laser irradiation at described time
On sound wall pattern microcavity, which specifically includes：The time of fixed heat reflux gradually increases the laser simultaneously
The output power of device, or the output power of the fixed laser are stepped up the time that heat flows back simultaneously；And it observes back
The variation of sound wall pattern microcavity resonant wavelength, until the difference of the target wavelength and resonant wavelength of the Whispering-gallery-mode microcavity
Absolute value is less than the line width of the pattern of the Whispering-gallery-mode microcavity.
In step S1, it is preferred that the Whispering-gallery-mode microcavity is micro- core annulus microcavity, Microsphere Cavities or micro- disk chamber.Work as institute
State Whispering-gallery-mode microcavity be Microsphere Cavities and micro- disk chamber when, it is small when the output power of the laser is than micro- core annulus microcavity.More
Preferably, the Whispering-gallery-mode microcavity is micro- core annulus microcavity.Referring to Fig. 2, in micro- core annulus microcavity, including one by dissipating
The pillar that the preferable material silicon chip of thermal effect 1 is fabricated to, column upper section are the fused silica layer 2 after solidification.The present embodiment
In, the Whispering-gallery-mode microcavity is regular shape, the preferably micro- core annulus microcavity of pattern.
Referring to Fig. 3, the preparation method of micro- core annulus microcavity includes the following steps：
S11：The silicon chip 1 of a high-purity is provided, the surface of the silicon chip 1 is coated with thick about 2 μm of silicon dioxide layer 2；
S12：It cleans and dries, in the one layer of photoetching of the uniformly smearing far from the silicon chip 1 of the silicon dioxide layer 2
Glue 3；
S13：One template with etching pattern is placed in parallel in the photoresist 3 far from the silicon dioxide layer 2
Surface exposes under ultraviolet lamp, and develops, by the photoresist of ultraviolet light irradiation can developed liquid wash off, and not illuminated still deposit
It stays on silicon chip 1, forms required figure；
S14：It is dried after washing off remaining developer solution, is placed in hydrofluoric acid and corrodes, the effect of hydrofluoric acid is and silica
Layer 2 reacts, and the silicon dioxide layer 2 being covered by photoresist will not be corroded, and remaining silicon dioxide layer 2 can disappear rapidly in reaction,
Hydrofluoric acid and photoresist 3 are washed off, the pattern that such photoresist is formed is converted to the pattern of silicon dioxide layer 2；
S15：It is placed in xenon fluoride and reacts, xenon fluoride can be reacted with silicon chip 1, but not be reacted with silicon dioxide layer 2, be passed through
Slowly etching can be obtained by a micro- disk chamber 4 for a long time；And
S16：Hot reflow treatment is carried out to micro- disk chamber 4, obtains micro- core annulus microcavity 5.
Quality factor（Q）It is the important parameter for describing optical microcavity constraint trimmed book neck, expression formula is：
,
Wherein,WithRespectively centre frequency and centre wavelength；WithRespectively as unit of frequency and wavelength
Line width, i.e., corresponding difference on the frequency or wavelength difference when height is the half of peak value or valley.
The quality factor for micro- disk chamber that step S15 is obtained can reach 105.By the hot reflow treatment of high power it
Afterwards, the quality factor of the micro- core annulus microcavity obtained in step S16 can greatly improve, and highest can reach 108。
It is obtained, be may be used existing using the preparation method it is appreciated that micro- core annulus microcavity 5 is not limited
Any preparation method obtains.
The pattern of Whispering-gallery-mode microcavity described in step S1 is the eigen solution for solving Maxwell equation and obtaining, each
Eigen solution corresponds to a specific spatial distribution, and by four pattern counts、、、To portray.Representative is TE
（Transverse electric）Pattern or TM（Horizontal magnetic）Pattern；It is radial pattern count, is the maximum number of radial field；It is angular pattern count,
It can be understood as the number of the strong maximum value of equator in-plane field；It is azimuthal modes number, it can be understood as vertical with the equatorial plane
The half maximum number of section field strength.Different pattern distributions correspond to different resonant frequencies and quality factor.It is appreciated that
In experiment, since the shape of Whispering-gallery-mode microcavity is theoretically full symmetric without the image of Buddha, so the theoretically microcavity pattern of degeneracy
It can cleave, therefore the model number that actual observation arrives can be very more.
Need to excite the pattern of the Whispering-gallery-mode microcavity in step S1.In the present embodiment, the method for use is to use
Optical taper couples micro- core annulus microcavity.The advantages of optical taper couples is that coupling efficiency is high, adjustability is strong.Referring to Fig. 4, preparing light
When fibre cone, the extramural cladding of optical fiber is first removed, and is cleaned up；It places it on oxyhydrogen flame and heats, while is opposite to two
Direction stretches, until most thin place is about 2 μm.It is appreciated that the method for excitation Whispering-gallery-mode may be optical taper coupling
Other methods except conjunction.
Referring to Fig. 5, Fig. 5 is the light path and circuit connecting mode when testing micro- core annulus 5 resonant wavelength of microcavity.It surveys
Trying principle is：Signal generator 6 exports triangular signal, gives tunable laser 7 to be used for frequency modulation all the way, another way is to oscillograph
8, after the laser that tunable laser 7 is emitted adjusts its polarization state by Polarization Controller 9, it is coupled by optical taper described
Micro- core annulus microcavity 5 is detected by photodetector 10 by the transmitted light of micro- core annulus microcavity 5, and is output to oscillograph 8
For observing waveform.In the present embodiment, the adjustable range of the tunable laser 7 is 1520nm-1570nm, tunable laser
The line width for the laser that device 7 is emitted is less than 200KHz.
Referring to Fig. 6, in step S3, hot reflux in thermal reflow process by signal generator 11, controller 12, swash
Light device 13 and lens 14 are constituted, wherein the laser 13 is for exporting laser, and in the present embodiment, the laser 13 is two
Carbon oxide laser device exports as square pulse laser；The signal generator 11 is used to set the frequency and duty of the laser
Than；The controller 12 can control largest light intensity and the time of pulse；The lens 14 are described micro- for focusing on laser
On core annulus microcavity 5.
In the present embodiment, since the centre wavelength that carbon dioxide laser exports laser is 10.6 μm, micro- core annulus
The materials silicon dioxide of microcavity 5 has very strong absorption in the wave band, and the silicon chip 1 of 2 bottom of silicon dioxide layer is in the suction of the wave band
It receives less.So when the carbon dioxide laser using low-power focuses on micro- core annulus microcavity 5, micro- core circle
The radius of ring microcavity 5 has small variation, due to approximate relation, micro- core annulus microcavity 5
Resonant frequency（Resonant wavelength）It can change with the variation of radius, and the shape of the stay material silicon chip 1 of bottom is hardly
Become.It is appreciated that the laser 14 is not limited to the carbon dioxide laser in the present embodiment, it can be according to the echo
The difference of melted material replaces with other lasers in wall pattern microcavity.
In step S3, before carrying out thermal reflow process, can according to the resonant wavelength of the Whispering-gallery-mode microcavity with
Difference and the experiment experience estimation of the target wavelength need output power or the heat reflux of laser in thermal reflow process
Time.In thermal reflow process, position of the Whispering-gallery-mode microcavity in each heat reflux should be identical, that is, in each heat
When reflux, the laser that the laser 13 is emitted is by focusing on the position phase on the Whispering-gallery-mode microcavity after lens 14
Together, to ensure that the output of energy and laser that Whispering-gallery-mode microcavity receives is in a linear relationship.
In the time of fixed heat reflux, when gradually increasing the output power of laser, output power preferably start from scratch by
It is cumulative big.Referring to Fig. 7, Fig. 7 is in the present embodiment, fixed hot return time gradually increases the output of carbon dioxide laser
When power, the variation diagram of micro- 5 resonant wavelength of core annulus microcavity, it can be seen from the figure that in this process, micro- core annulus microcavity
5 resonant wavelength first increases（In red shift area）, when the output power of carbon dioxide laser is 6W, micro- core annulus microcavity 5
Resonant wavelength reach critical value, continue growing the output power of carbon dioxide laser, the resonant wavelength of micro- core annulus microcavity 5
Start to reduce（In blue shift area）.The dynamic process of whole process is：When the output power of carbon dioxide laser is smaller
When（Red shift area）, the energy that micro- core annulus microcavity 5 receives is smaller, and surface portion silica, which can melt, causes radius to become
Greatly.According to formulaIt is found that the increase of radius can lead to the increase of micro- 5 resonant wavelength of core annulus microcavity.
When the output power of carbon dioxide laser reaches more than certain threshold value（Blue shift area）, the surface of micro- core annulus microcavity 5
Power can become sufficiently large, and micro- core annulus microcavity 5 is forced further to shrink, meanwhile, part of silica is led to radius by thermal evaporation
Reduce, so the resonant wavelength of micro- core annulus microcavity 5 can correspondingly reduce.It can also be seen that identical resonant frequency from Fig. 7
Correspond to two heat reflux laser powers.It is not reached so carrying out heat reflux using lower laser output power in red shift area
When to target, the power that can also continue to increase laser reaches blue shift area, realizes target, greatlys improve success
Rate.
Using the output power of fixed laser, when method for being stepped up the time of heat reflux, need to first determine whether resonance wave
Long moving direction, and according to the output power of moving direction selection laser.If target wavelength is more than the Echo Wall
The resonant wavelength of pattern microcavity is it is necessary to selecting the output power in red shift area, output power that is on the contrary then selecting blue shift area.This reality
It applies in example, when target wavelength is more than the resonant wavelength of micro- core annulus microcavity 5, the range of choice of output power is more than 0W
Less than 6W；When target wavelength is less than the resonant wavelength of micro- core annulus microcavity 5, the range of choice of output power is more than 6W
Less than 13W.
Referring to Fig. 8, Fig. 8 is to fix carbon dioxide laser output power in the present embodiment at red shift area（It selects herein
Select 4.5W）, increase hot return time, micro- 5 resonant wavelength variation diagram of core annulus microcavity.It can be seen from the figure that in this region
With the increase of hot return time, resonant wavelength can increase.When hot return time is shorter, resonant wavelength and hot return time base
Related in linear positive in sheet, after reaching turning point, advancing the speed for resonant wavelength can obviously slow down.Referring to Fig. 9, Fig. 9 is
Fixed carbon dioxide laser output power is at blue shift area（11W is selected herein）, increase hot return time, micro- core annulus microcavity
5 resonant wavelength variation diagrams.It can be seen from the figure that when hot return time is shorter, resonant wavelength and hot return time are substantially
In negative linear correlation, after reaching turning point, the rate of change of resonant wavelength slows down.Comparing Fig. 8 and Fig. 9 can obtain, the transfer of blue shift area
Obviously hot return time more corresponding than turning point in red shift area is small for the corresponding hot return time of break, this is because the process is in indigo plant
It is the process that melting is shunk to move area, and is nature melting process in red shift area, so the relaxation time in blue shift area is relative to red shift
The relaxation time in area is shorter.
The first regulative mode：
One micro- core annulus microcavity is provided, and tests the resonant wavelength of micro- core annulus microcavity；A target wavelength is set, the mesh
Mark wavelength is grown up 20 pm than the resonance wave of micro- core annulus microcavity；Estimate to obtain laser in thermal reflow process according to experiment experience
Peak power output be 3-4W, in thermal reflow process, set the frequency of square pulse carbon dioxide laser as 1Hz, duty ratio
It is 10%, fixed hot return time every time is 100s, and the output power of laser is started from scratch and increased as unit of 0.6W.Institute
The quality factor for stating micro- one pattern of core annulus microcavity is 1.9 × 106（The pattern is 0.8pm in the line width of 1550nm wave bands）.Please
Refering to table 1, as can be seen from Table 1, with the increase of laser output power, the difference of target wavelength and microcavity resonant wavelength by
Decrescence small, when the output power of laser increases to 3.6W, the two is almost the same, differs 0.4pm, micro- much smaller than micro- core annulus
The pattern line width 0.8pm of chamber, it is believed that realize set adjusting requirement.And the heat in micro- core annulus microcavity manufacturing process
Power flow back generally in 25W or more, the power which needs is smaller, far below in micro- core annulus microcavity manufacturing process
Heat reflux power.
Table 1 fixes hot return time and is 100s and increases laser power, resonant wavelength variation table
| Heat reflux power（W） | 0 | 0.6 | 1.2 | 1.8 | 2.4 | 3.0 | 3.6 |
| The difference of target wavelength and resonant wavelength（pm） | 20 | 12.8 | 8.8 | 3.6 | 1.8 | 0.9 | 0.4 |
Second of regulative mode：
One micro- core annulus microcavity is provided, and tests the resonant wavelength of micro- core annulus microcavity；A target wavelength is set, the mesh
Mark wavelength is grown up 25pm than the resonance wave, estimates that the total time of heat reflux may be in 60s-70s or so according to experiment experience.By
It should be moved to increased direction in micro- core annulus microcavity resonant wavelength, so, laser output power should be located at red shift area, and laser is defeated
It is 5W to go out power selection.Hot return time increases 15s every time, sets the frequency of square pulse laser as 1Hz, duty ratio is
10%.The quality factor of micro- one pattern of core annulus microcavity is 1.2 × 106（The pattern is in the line width of 1550nm wave bands
1.29pm）.
Please refer to table 2, it can be seen that as time increases, the resonant wavelength of micro- core annulus microcavity gradually levels off to mesh
Wavelength is marked, when hot return time is 60s, the difference about -0.34pm of target wavelength and the resonant wavelength of micro- core annulus microcavity,
Absolute value is less than line width 1.29pm, thinks to have achieved the purpose that effective adjusting substantially.
2 fixed laser power 5W of table simultaneously increases hot return time, resonant wavelength movement figure
| Hot return time（s） | 0 | 15 | 30 | 45 | 60 |
| The difference of target wavelength and resonant wavelength（pm） | 25 | 13.5 | 9.12 | 7.49 | -0.34 |
The method provided in an embodiment of the present invention that adjust Whispering-gallery-mode microcavity resonant frequency that flowed back by low-power heat has
It has the advantage that：First, being put forward for the first time through laser irradiation Whispering-gallery-mode microcavity, make the geometry of Whispering-gallery-mode microcavity
Small variation is generated to adjust resonant wavelength, keeps microcavity temperature identical as ambient temperature in experiment and practical application, pole
Greatly influence of the less ambient enviroment to microcavity, disturbance rejection is very strong, avoids microcavity and external environment when temperature in use is adjusted
System instability problem caused by excessive temperature differentials；Second, using the method for heat reflux, carbon dioxide laser can be allowed to pass through lens
Single target microcavity is focused on, is adjusted, other microcavitys is not had an impact for single target microcavity；Third, should
Method makes full use of adjusts the resonant frequency of microcavity with identical thermal reflow process in Whispering-gallery-mode microcavity preparation process, with
Temperature adjust unlike, this method be not necessarily to additional control device, and reach adjust purpose after, it is no longer necessary to regulating device
The stabilization of resonant frequency, method and required equipment can be maintained fairly simple；Fourth, degree of regulation can reach 0.005nm
（Corresponding to 1550nm wave bands about 600MHz）Hereinafter, maximal regulated range can be in 0.06nm（About corresponding to 1550nm wave bands
7.5GHz）More than, it is more suitable for using in actual production, life；Fifth, laser described in the adjusting method of the present invention
Power is generally in 13W hereinafter, far below the heat reflux power in microcavity manufacturing process（About 25W or more）.
In addition, those skilled in the art can also make other variations in spirit of that invention, these are smart according to the present invention certainly
Change made by god, should all be included in scope of the present invention.
Claims (7)
1. a kind of method adjusting Whispering-gallery-mode microcavity resonant frequency, includes the following steps：
S1：One Whispering-gallery-mode microcavity is provided, the resonant wavelength of the Whispering-gallery-mode microcavity is tested, and selects the Whispering-gallery-mode
The pattern of microcavity；
S2：Determine a target wavelength；And
S3：Hot reflow treatment is carried out to the Whispering-gallery-mode microcavity using a hot reflux and adjusts the Echo Wall to realize
The resonant frequency of pattern microcavity, the hot reflux include a laser, and the output power of the laser is less than or equal to 13W, should
Laser projects laser irradiation on the Whispering-gallery-mode microcavity, which specifically includes：Fixed heat reflux
Time gradually increase the output power of the laser simultaneously and realize the bidirectional modulation of resonant frequency, or the fixed laser
The output power of device is stepped up the time of heat reflux simultaneously, when the output power using the fixed laser gradually increases simultaneously
When the method for the time being heated to reflux, the moving direction of the resonant wavelength of Whispering-gallery-mode microcavity need to be first determined whether, and according to this
Moving direction selects the output power of laser, defeated when target wavelength is more than the resonant wavelength of the Whispering-gallery-mode microcavity
The range of choice for going out power is to be less than 6W more than 0W；When target wavelength is less than the resonant wavelength of the Whispering-gallery-mode microcavity,
The range of choice of output power is to be less than 13W more than 6W；And the variation of observation Whispering-gallery-mode microcavity resonant wavelength, Zhi Daosuo
The absolute value for stating the target wavelength of Whispering-gallery-mode microcavity and the difference of resonant wavelength is less than the mould of the Whispering-gallery-mode microcavity
The line width of formula.
2. the method for adjusting Whispering-gallery-mode microcavity resonant frequency as described in claim 1, which is characterized in that the Echo Wall
Pattern microcavity is micro- core annulus microcavity, Microsphere Cavities or micro- disk chamber.
3. the method for adjusting Whispering-gallery-mode microcavity resonant frequency as described in claim 1, which is characterized in that the laser
For carbon dioxide laser.
4. the method for adjusting Whispering-gallery-mode microcavity resonant frequency as described in claim 1, which is characterized in that returned in each heat
When stream, the same position of laser that the laser projects by a lens focus on the Whispering-gallery-mode microcavity.
5. the method for adjusting Whispering-gallery-mode microcavity resonant frequency as described in claim 1, which is characterized in that in step S3,
When gradually increasing the method for output power of laser simultaneously using the time of the fixed heat reflux, output power is started from scratch
Gradually increase.
6. the method for adjusting Whispering-gallery-mode microcavity resonant frequency as claimed in claim 5, which is characterized in that the output work
Rate is increased as unit of 0.6W.
7. the method for adjusting Whispering-gallery-mode microcavity resonant frequency as described in claim 1, which is characterized in that the tune of this method
It saves precision and is less than 0.005nm, adjustable range is more than 0.06nm.
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