CN107450249B - Memristor and using method thereof - Google Patents
Memristor and using method thereof Download PDFInfo
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- CN107450249B CN107450249B CN201710612920.2A CN201710612920A CN107450249B CN 107450249 B CN107450249 B CN 107450249B CN 201710612920 A CN201710612920 A CN 201710612920A CN 107450249 B CN107450249 B CN 107450249B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/354—Third or higher harmonic generation
Abstract
The embodiment of the invention provides a memristor and a using method thereof, wherein the memristor comprises the following components: the micro-ring resonator is positioned in the plane of the optical waveguide and is processed by a material with three-order nonlinearity; the optical waveguide comprises a first channel and a second channel, wherein the first channel is used for inputting pump light, and the second channel is used for outputting light; the electrode is positioned on the micro-ring resonant cavity and used for applying voltage to the micro-ring resonant cavity. The memristor and the use method thereof provided by the embodiment of the invention can realize higher extinction ratio, reduce power consumption, are compatible with the existing photonic integration scheme, are more suitable for future large-scale integration, and realize high-efficiency optical storage.
Description
Technical Field
The embodiment of the invention relates to the technical field of photoelectron technology and optical fiber communication, in particular to a memristor and a using method thereof.
Background
Memristors were prophetic in 1971 by chinese scientist zeiss, but were not physically implemented until their presence was first experimentally confirmed in natural journal by the hewlett packard laboratory in 2008. Heretofore, memristors have attracted extensive attention. Because of the non-volatile memory function, the Resistive Random Access Memory (RRAM), namely the memory resistance, can be realized, the memory time is longer compared with the traditional dynamic memory (DRAM), the refreshing time is reduced, and the next generation of non-volatile memory can be realized in the future and replace the existing flash memory. Moreover, by utilizing the electro-optic nonlinear effect, a plurality of complex analog calculation processes can be realized, such as chaos phenomenon, reserve pool calculation and the like. At present, research shows that the memristor chaotic circuit can generate high-frequency chaotic signals and has important application in the fields of chaotic secret communication, electronic measurement, image encryption and the like.
The traditional electronic memristor generally adopts a metal-insulation layer-metal structure, and the resistance is changed by adjusting the voltage between two metal layers to realize a low resistance state and a high resistance state. In recent years, with the development of photonic technology, some photon-assisted memristors attract attention. Such optical read-based memories are key next generation optical storage devices in optical communication systems and may potentially replace existing electronic buffers.
However, in recent years, optically read memory cells implemented using a plasmon process have a limited extinction ratio in spite of their small size, and require relatively high electrical power consumption to implement phase shifting. Moreover, the compatibility of the technology and the existing photon integration platform is poor, and the technology is not suitable for large-scale integration in the fields of future photon calculation and photon storage.
Disclosure of Invention
Aiming at the problems in the prior art, the embodiment of the invention provides a memristor and a using method thereof.
In one aspect, an embodiment of the present invention provides a memristor, where the memristor includes:
a micro-ring resonator, an optical waveguide, and an electrode, wherein,
the micro-ring resonant cavity is positioned in the optical waveguide plane and is processed by a material with three-order nonlinearity;
the optical waveguide comprises a first channel and a second channel, wherein the first channel is used for inputting pump light, and the second channel is used for outputting light;
the electrode is positioned on the micro-ring resonant cavity and used for applying voltage to the micro-ring resonant cavity.
In another aspect, an embodiment of the present invention provides a method for using the memristor, where the method includes:
inputting pump light to a first channel of the optical waveguide; the wavelength of the pumping light is close to or the same as the inherent resonance wavelength of the memristor, and the optical power of the pumping light is within the preset optical power range of the memristor;
applying an input voltage to the electrode; the input voltage is gradually increased from a first critical voltage preset by the memristor to a second critical voltage preset by the memristor, and then is gradually decreased from the second critical voltage to the first critical voltage, wherein at the moment, the resonant wavelength of the memristor is the same as the wavelength of the pumping light.
According to the memristor and the using method thereof, the memristor effect of electric signal input and photocurrent reading is achieved by using the micro-ring resonant cavity with the high Q value and the high extinction ratio. The micro-ring resonant cavity is characterized in that a micro-ring resonant cavity is arranged on the substrate, a plurality of photonic integrated platforms are arranged on the substrate, the photonic integrated platforms are arranged on the photonic integrated platforms, and the photonic integrated platforms are arranged on the photonic integrated platforms.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a memristor based on electrical signal input and photocurrent reading of a micro-ring resonant cavity according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a memristor for photocurrent reading of an electrical signal input of the silicon nitride-based high-Q micro-ring resonant cavity according to the embodiment of the present invention;
fig. 3 is a schematic diagram of a memristor for photocurrent reading based on electrical signal input of a micro-ring resonant cavity according to an embodiment of the present invention;
FIG. 4 is a graph of the change in memristor characteristics with input pump light power provided by an embodiment of the present invention;
FIG. 5 is a flow chart of a method of using a memristor provided by an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments, but not all embodiments, of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of a memristor based on electrical signal input and photocurrent reading of a micro-ring resonant cavity according to an embodiment of the present invention, as shown in fig. 1, the memristor includes: a micro-ring resonator 11, an optical waveguide 12, and an electrode 13, wherein,
the micro-ring resonant cavity 11 is positioned in the plane of the optical waveguide 12 and is processed by a material with three-order nonlinearity, so that the processed micro-ring resonant cavity 11 can generate a three-order nonlinearity effect under the excitation of pump light, in addition, the Q value of the micro-ring resonant cavity 11 is very large, the Q value can reach 460000, the micro-ring resonant cavity is a high-Q-value micro-ring resonant cavity, the extinction ratio is very high, and the extinction ratio can reach 40 dB; the optical waveguide 12 includes a first channel 121 and a second channel 122, where the first channel 121 is used to input pump light, the pump light is used to excite the micro-ring resonator 11 to generate a third-order nonlinear effect, and the second channel 122 is used to output light, and after performing photoelectric conversion by a photodetector, optical power or photocurrent of the output light can be read; the electrode 13 is located on the micro-ring resonator 11, and is configured to apply an input voltage to the micro-ring resonator 11, and the position of the resonant wavelength of the micro-ring resonator 11 can be changed by adjusting the magnitude of the input voltage.
Specifically, the memristor provided by the embodiment of the present invention is a memristor based on the electrical signal input and photocurrent reading of the micro-ring resonant cavity 11, and the memristor includes the micro-ring resonant cavity 11, the optical waveguide 12 and the electrode 13, where the micro-ring resonant cavity 11 is processed by a material with third-order nonlinearity and has a very high Q value, which may cause the third-order nonlinearity effect, such as the Kerr effect, to occur in the micro-ring resonant cavity 11 under the excitation action of the pump light after the pump light with sufficiently high optical power is input in the first channel 121 of the optical waveguide 12, and this effect may cause the red shift of the resonant wavelength of the micro-ring resonant cavity 11. Because the micro-ring resonant cavity 11 has a frequency selection effect, the wavelength of the pump light is adjusted to be close to the inherent resonant wavelength of the micro-ring resonant cavity 11; an input voltage is applied to the electrode 13 of the micro-ring resonator 11, and the magnitude of the input voltage is adjusted, so that the resonance wavelength of the micro-ring resonator 11 can be caused to move, and when the resonance wavelength is consistent with the wavelength of the pump light, the maximum optical power enhancement can be realized. Therefore, when the wavelength of the pump light is close to the inherent wavelength of the micro-ring resonator 11, the energy in the micro-ring resonator 11 can be enhanced to a greater extent by using a small input voltage, and further, the output optical power can be increased. In addition, the micro-ring resonator 11 is a micro-ring resonator with a high Q value, and the extinction ratio of the micro-ring resonator 11 is high, which can reach 40 dB.
Fig. 3 is a schematic diagram of a memristor based on input of an electrical signal and reading of photocurrent by a micro-ring resonator according to an embodiment of the present invention, and as shown in fig. 3, normalized voltage is represented on the abscissa, which is obtained after processing an input voltage applied to an electrode, and optical power output from a second channel of an optical waveguide is represented on the ordinate. The method comprises the steps that pumping light is input into a first channel in an optical waveguide, wherein the wavelength of the pumping light is lambda 0, the wavelength lambda 0 of the pumping light is close to the inherent wavelength of a micro-ring resonant cavity, under the excitation of the pumping light, a third-order nonlinear effect, such as a Kerr effect, is generated in the micro-ring resonant cavity, and at the moment, an input voltage is applied to two ends of an electrode, the resonant wavelength of the micro-ring resonant cavity can be moved. As shown in fig. 3, initially, when the input voltage is small, the resonant wavelength of the micro-ring resonator is smaller than the wavelength λ 0 of the pump light, and as the input voltage increases, the resonant wavelength of the micro-ring resonator is shifted red and gradually approaches the wavelength λ 0 of the pump light, and the energy in the micro-ring resonator is continuously enhanced, so that the output optical power is continuously increased; with the increase of the input voltage, the resonant wavelength of the micro-ring resonant cavity is gradually close to the wavelength lambda 0 of the pump light, the energy enhancement speed in the micro-ring resonant cavity is faster and faster, when the input voltage reaches a second critical voltage, the degree of red shift of the resonant wavelength of the micro-ring resonant cavity is increased, and the resonant wavelength jumps to cause the resonant wavelength of the micro-ring resonant cavity to be larger than the wavelength lambda 0 of the pump light; at this time, if the input voltage is continuously increased, the resonant wavelength of the micro-ring resonant cavity is continuously red-shifted, the resonant wavelength is more and more away from the wavelength λ 0 of the pump light, so that the energy in the micro-ring resonant cavity is gradually reduced, therefore, after the input voltage reaches the second critical voltage, the input voltage is gradually reduced, at this time, the resonant wavelength of the micro-ring resonant cavity is blue-shifted and gradually approaches the wavelength λ 0 of the pump light, so that the energy in the micro-ring resonant cavity is continuously increased, and the output optical power is also continuously increased; when the input voltage is reduced to a first critical voltage, the resonance wavelength of the micro-ring resonant cavity is consistent with the wavelength lambda 0 of the pump light, at the moment, the energy in the micro-ring resonant cavity reaches the maximum, and the output light power is also the maximum; if the input voltage is continuously reduced, the resonant wavelength of the micro-ring resonant cavity is continuously blue-shifted and gradually gets away from the wavelength lambda 0 of the pump light, so that the energy in the micro-ring resonant cavity is gradually reduced, and the output optical power is also gradually reduced. Thus, as can be seen from fig. 3, as the input voltage changes from a small increase to a small decrease, the output optical power exhibits a hysteresis loop effect, i.e., a memristor-like effect. Because the wavelength of the selected pump light is very close to the inherent wavelength of the micro-ring resonant cavity, the larger output optical power can be realized only by using a very small input voltage.
According to the memristor provided by the embodiment of the invention, a higher extinction ratio can be realized by utilizing the high nonlinearity in the micro-ring resonant cavity with the high extinction ratio and the high Q value, and the requirement of an electric signal bias voltage can be effectively reduced by reasonably setting the optical wavelength position of input pump light, so that the power consumption is reduced.
Optionally, on the basis of the above embodiment, the micro-ring resonator is processed by using a photonic integrated platform.
Optionally, on the basis of the foregoing embodiments, the optical waveguide is specifically a single strip-shaped optical waveguide.
Optionally, on the basis of the above examples, the optical waveguide is specifically a double-strip optical waveguide.
Specifically, the micro-ring resonator mentioned in the above embodiment adopts a general photonic integration platform in the processing process, for example, an optical waveguide provided by a trillex waveguide process may be adopted, so as to implement a micro-ring resonator (add-drop type) having an upper path and a lower path with a Q value of 460000, and the trillex waveguide process is compatible with the existing photonic integration scheme, so that the micro-ring resonator is suitable for large-scale integration.
The memristor provided by the embodiment of the invention realizes the functions by adopting a universal photon integration platform to process a device and adopting an important basic unit in the integration platform, namely the micro-ring resonant cavity, is compatible with the existing photon integration scheme, is more suitable for future large-scale integration and realizes high-efficiency optical storage.
Optionally, on the basis of the foregoing embodiments, the material having third-order nonlinearity is specifically silicon nitride.
Optionally, on the basis of the foregoing embodiments, the material having third-order nonlinearity is specifically silicon.
Specifically, the micro-ring resonator mentioned in the above embodiments is processed from a material having third-order nonlinearity, where the material having third-order nonlinearity is many, and the embodiment of the present invention does not limit the material, for example, the material may be silicon nitride, or silicon, as long as the material has third-order nonlinearity.
Fig. 2 is a schematic structural diagram of a memristor for inputting an electrical signal and reading a photocurrent of a silicon nitride-based high-Q micro-ring resonant cavity according to an embodiment of the present invention, and as shown in fig. 2, the micro-ring resonant cavity is processed by using a silicon nitride material and has a very high Q value. The radius of the micro-ring resonant cavity is 125 μm, the width of the optical waveguide is 1.2 μm, the distance between the optical waveguide and the micro-ring resonant cavity is 2 μm, the input end of the optical waveguide is used for inputting pump light, the output end of the optical waveguide is used for optical reading and reading optical power or optical current of output light, the micro-ring resonant cavity processed by silicon nitride materials can generate a nonlinear effect under the excitation of the pump light, and the electrode is positioned on the micro-ring resonant cavity and used for applying an electric signal, for example, input voltage can be applied. By adjusting the magnitude of the input voltage, the resonant wavelength of the micro-ring resonant cavity can generate red shift or blue shift, so that the output optical power presents the effect of a hysteresis loop.
According to the memristor provided by the embodiment of the invention, the micro-ring resonant cavity is processed by adopting silicon nitride or silicon with third-order nonlinearity, so that the embodiment of the invention is more scientific and reasonable.
Fig. 4 is a graph showing the change of the characteristics of the memristor with the input pump light power according to the embodiment of the present invention, and fig. 5 is a flowchart of a method for using the memristor according to the embodiment of the present invention, as shown in fig. 5, the method includes:
Specifically, after the memristor provided by the embodiment of the present invention is processed, a group of corresponding parameter lists is provided, where the parameter lists include: the wavelength value of the pump light, the optical power value range of the pump light, the first critical voltage and the second critical voltage. The wavelength value of the pump light is close to or the same as the inherent resonant wavelength of the micro-ring resonant cavity, so that the larger optical power enhancement can be realized by applying smaller input voltage on the electrode, and the required input voltage is very small because the wavelength of the pump light is very close to the inherent resonant wavelength of the micro-ring resonant cavity; the optical power value range of the pump light means that when the optical power of the pump light is within the range, can excite the third-order nonlinear effect in the micro-ring resonant cavity, so that the resonant wavelength of the micro-ring resonant cavity can be shifted, furthermore, by adjusting the magnitude of the input voltage, the output optical power can exhibit the hysteresis loop effect, as shown in fig. 4, the abscissa represents the value of the input voltage, the ordinate represents the optical power of the output light, the curves in fig. 4 correspond to the hysteresis loop effect exhibited by the output optical power when the optical power of the pump light takes different values, as shown in fig. 4, when the optical power of the pump light is 21dBm, the output optical power can exhibit the hysteresis loop effect, when the optical power of the pump light gradually increases to 23dBm, 25dBm, 27dBm and 30dBm, the hysteresis loop effect of the output optical power becomes more and more obvious; the first critical voltage means that in the process that the input voltage is greatly reduced, when the input voltage is reduced to the first critical voltage, the resonant wavelength of the micro-ring resonant cavity is the same as the wavelength of the pump light, and at the moment, the maximum output optical power can be obtained; the second threshold voltage is that, when the input voltage is increased from a small value to the second threshold voltage, the output optical power of the optical waveguide starts to decrease if the input voltage is increased continuously.
The memristor using method comprises the following steps: firstly, selecting the wavelength and the optical power of the pump light according to the parameter list; then, the pump light is input into a first channel of the optical waveguide, and under the excitation of the pump light, a third-order nonlinear effect is generated in the micro-ring resonant cavity; applying an input voltage to the electrode, wherein the input voltage is gradually increased from a value close to but less than the first critical voltage to the second critical voltage, and the output optical power is gradually increased in the process; then, the value of the input voltage is gradually decreased to the first critical voltage, in the process, the output optical power in the optical waveguide is continuously increased, and when the input voltage is decreased to the first critical voltage, the output optical power reaches the maximum, and in the change process of the input voltage, the output optical power can present a hysteresis loop effect, namely, the memristor effect is achieved.
According to the using method of the memristor, provided by the embodiment of the invention, the function of the memristor can be realized by inputting the pumping light and adjusting the magnitude of the applied voltage.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the embodiments of the present invention, and are not limited thereto; although embodiments of the present invention have been described in detail with reference to the foregoing embodiments, those skilled in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (7)
1. A memristor, comprising:
a micro-ring resonator, an optical waveguide, and an electrode, wherein,
the micro-ring resonant cavity is positioned in the optical waveguide plane and is processed by a material with three-order nonlinearity;
the optical waveguide comprises a first channel and a second channel, wherein the first channel is used for inputting pump light, and the second channel is used for outputting light;
the electrode is positioned on the micro-ring resonant cavity and used for applying voltage to the micro-ring resonant cavity.
2. The memristor according to claim 1, wherein the micro-ring resonant cavity is fabricated using a photonic integration platform.
3. Memristor according to claim 1, characterized in that the optical waveguide is in particular a single strip-shaped optical waveguide.
4. Memristor according to claim 1, characterized in that the optical waveguide is in particular a double-stripe optical waveguide.
5. Memristor according to claim 1, characterized in that the material with third-order nonlinearity is in particular silicon nitride.
6. Memristor according to claim 1, characterized in that the material with third-order nonlinearity is in particular silicon.
7. A method of using the memristor of any of claims 1 to 6, comprising:
inputting pump light to a first channel of the optical waveguide; the wavelength of the pumping light is close to or the same as the inherent resonance wavelength of the memristor, and the optical power of the pumping light is within the preset optical power range of the memristor;
applying an input voltage to the electrode; the input voltage is gradually increased from a first critical voltage preset by the memristor to a second critical voltage preset by the memristor, and then is gradually decreased from the second critical voltage to the first critical voltage, wherein at the moment, the resonant wavelength of the memristor is the same as the wavelength of the pumping light.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0915666A (en) * | 1994-02-25 | 1997-01-17 | Agency Of Ind Science & Technol | Method for controlling nonlinear optical effect |
| CN101794053A (en) * | 2010-03-01 | 2010-08-04 | 中国科学院半导体研究所 | Full-gloss logic XNOR gate structure based on micro-ring resonator structure |
| CN104868351A (en) * | 2015-04-27 | 2015-08-26 | 清华大学 | Method for adjusting resonant frequency of echo wall mode microcavity |
| CN106374332A (en) * | 2016-11-09 | 2017-02-01 | 南京诺派激光技术有限公司 | Saturable absorption device based on silicon quantum dot thin film and application thereof in fiber pulse laser device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0915666A (en) * | 1994-02-25 | 1997-01-17 | Agency Of Ind Science & Technol | Method for controlling nonlinear optical effect |
| CN101794053A (en) * | 2010-03-01 | 2010-08-04 | 中国科学院半导体研究所 | Full-gloss logic XNOR gate structure based on micro-ring resonator structure |
| CN104868351A (en) * | 2015-04-27 | 2015-08-26 | 清华大学 | Method for adjusting resonant frequency of echo wall mode microcavity |
| CN106374332A (en) * | 2016-11-09 | 2017-02-01 | 南京诺派激光技术有限公司 | Saturable absorption device based on silicon quantum dot thin film and application thereof in fiber pulse laser device |
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