CN108808433B - Whispering gallery mode photonic device with strut support and preparation method and application thereof - Google Patents
Whispering gallery mode photonic device with strut support and preparation method and application thereof Download PDFInfo
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- CN108808433B CN108808433B CN201710283543.2A CN201710283543A CN108808433B CN 108808433 B CN108808433 B CN 108808433B CN 201710283543 A CN201710283543 A CN 201710283543A CN 108808433 B CN108808433 B CN 108808433B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
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- C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
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- C09D133/12—Homopolymers or copolymers of methyl methacrylate
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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Abstract
The invention belongs to the field of photonic devices, and particularly relates to a whispering gallery mode photonic device with a strut support, and a preparation method and application thereof. In particular, the present invention provides a microdisk having a support post support, wherein the support post comprises a first e-beam resist, the microdisk comprises a second e-beam resist, and the first e-beam resist has a lower molecular weight than the second e-beam resist. The microdisk with the support column support, the microdisk array structure, the whispering gallery mode optical resonance microcavity and the photonic device have the advantages of simple preparation process, convenient operation, low cost, large-scale preparation, high quality factor and spectrum modulation function, solve the problem that the substrate needs to be independently etched in the preparation process of the traditional high-quality microcavity, and realize the coupling effect of a plurality of microcavities; the method has wide practicability and is particularly suitable for the design and application of photonic integrated components.
Description
Technical Field
The invention belongs to the field of photonic devices, and particularly relates to a whispering gallery mode photonic device with a strut support, and a preparation method and application thereof.
Background
Existing computers transfer and process information electronically. However, the integration density is limited by the interference of the electron thermal effect and the quantum effect, and higher requirements on the information storage and the processor performance cannot be met. The development of the information age urgently needs to research and develop high-performance integrated optical devices to solve the problems of operation speed limitation and thermal effect under a small scale faced by integrated electronics. Compared with the traditional Fabry-Perot (FP) cavity, the whispering gallery mode micro-cavity has higher quality factor, so that the transmission or luminescence spectrum can be modulated with higher resolution, and a series of integrated photonics functions based on spectral line mode modulation, such as efficient filters, high-sensitivity sensors, low-threshold lasers, nonlinear effects, signal delayers and the like, can be realized. The existing echo wall micro-cavity comprises a micro-disk cavity, a micro-goblet cavity, a micro-ring core cavity and the like. It is also generally necessary to etch away a portion of the substrate in contact with the cavity by a corrosive and toxic xenon fluoride gas to obtain a post-supported microdisk structure that reduces the energy dissipation of the optical field to the substrate. These methods face the problems of complicated process and large energy consumption. More importantly, the existing method can not realize the preparation of arrayed and patterned multi-microcavity structures, and is difficult to realize a functionalized whispering gallery mode photonic loop. Therefore, there is a need to develop whispering gallery mode microdisk photonic devices with improved performance, and low cost, controllable and broad range fabrication methods for high quality factor microcavity structures.
Disclosure of Invention
To ameliorate the deficiencies of the prior art, the present invention provides a microdisk having a support post support, wherein the support post comprises a first e-beam resist, the microdisk comprises a second e-beam resist, and the first e-beam resist has a lower molecular weight than the second e-beam resist.
Preferably, the pillars are composed of a first electron beam resist and the microdisk is composed of a second electron beam resist.
According to the invention, the first and second electron beam resists are of different molecular weight, for example selected from linear polymers of different molecular weight.
As an example, the first e-beam resist may be a first polymer, the second e-beam resist may be a second polymer, and the molecular weights of the first and second polymers are not the same. For example, the first and second polymers may be selected from the following polymers of different molecular weights: polymethyl methacrylate (PMMA), poly (butene-1-sulfone), poly (p-tert-butoxy-2-methylstyrene) (TBMS), glycidyl methacrylate, and ethyl acrylate.
According to the present invention, preferably, the polymers having different molecular weights may be selected from polymers having molecular weights of 10k to 1000 k. For example, it may be selected from PMMA with a molecular weight of 996k, PMMA with 350k, PMMA with 120k, PMMA with 90k, PMMA with 15 k.
Preferably, a substrate is further disposed below the support post made of the first electron beam resist.
According to the invention, the substrate may be selected from conductive or non-conductive substrates which may be spin coated with polymeric materials, for example selected from one or more of the following: silicon wafer, quartz wafer, glass wafer, conductive glass wafer, magnesium fluoride (MgF)2) Metal films, reinforced mirrors, polyethylene naphthalate (PEN), polyethylene terephthalate (PET), and the like.
The invention also provides a preparation method of the microdisk with the support column support, which comprises the following steps:
1) mixing a first electron beam resist and a first solvent, and mixing a second electron beam resist and a second solvent to obtain a solution of the first electron beam resist and a solution of the second electron beam resist respectively;
2) adding a luminescent material into the solution of the second electron beam resist to obtain a mixed solution;
3) spin-coating a solution of a first electron beam resist on a substrate to obtain a first film containing the first electron beam resist;
4) spin-coating the mixed solution obtained in the step 2) on the first film, drying, and forming a second film containing a second electron beam resist on the first film;
5) preparing a disc pattern by electron beam exposure, and washing by a developing solution and a fixing solution to form the microdisk with the support pillar.
According to the present invention, the concentration of the solution of the first electron beam resist and the solution of the second electron beam resist may be 70 to 250mg/ml, for example 120 to 200 mg/ml. Preferably, the first and second solvents may be the same or different and may be selected from organic solvents, for example from one or more of the following solvents: chlorobenzene, anisole, ethyl lactate, toluene.
According to the present invention, the light emitting material may be selected from one or more of organic dyes, quantum dots, rare earth doped nanoparticles, and the like.
According to the present invention, the organic dye may be one or more selected from the group consisting of rhodamine (e.g., rhodamine 6G), coumarin (e.g., coumarin 30), nile blue, oligostyrenes (e.g., 1, 4-bis (α -cyano-4-diphenylanilinophenyl) -2, 5-diphenylbenzene CNDPASDB), and the like.
According to the invention, the mass percentage of the luminescent material in the second electron beam resist may be 0.2-10%, preferably 2-5%.
If the substrate used is a non-conductive substrate, a layer of conductive glue can be spin-coated on the second electron resist and removed after the electron beam exposure is finished.
For example, the conductive paste may be spin-coated at 1000-.
The drying method of the conductive adhesive can be hot plate drying, the temperature can be 120-200 ℃ (such as 180 ℃), and the drying time can be 1-30 minutes (such as 2 minutes). Preferably, after the conductive paste is removed, the subsequent steps are continued.
According to the present invention, the conductive paste may be, for example, one or more of water-soluble polymer conductive pastes. As an example, the conductive paste may be selected from a solution of polyaniline and its derivatives in a mixed solvent of water and isopropyl alcohol, such as commercially available AR-PC 5090.02.
According to the invention, the developing solution can be selected from a mixed solution of methyl isobutyl ketone and isopropanol in a volume ratio of 1:3, and the developing time can be 10-60 s, such as 30 s; the fixing solution can be selected from isopropanol, and the fixing time can be 10-60 s, such as 30 s.
According to the invention, step 1) also comprises a step of stirring after mixing;
preferably, the stirring temperature can be 15-80 ℃, for example, 25-70 ℃;
preferably, the stirring time may be 1 to 36 hours, for example 5 to 24 hours;
in the step 3), the spin coating speed can be 500-5000 rpm (revolutions per minute), for example 1000-1500 rpm;
preferably, step 3) further comprises a drying step after spin coating the solution of the first electron beam resist on the substrate; preferably, the drying method may be hot plate drying, the temperature may be 120 to 200 ℃ (e.g. 180 ℃), and the drying time may be 1 to 30 minutes, for example 1.5 to 4 minutes, such as 2 minutes;
preferably, the first film may have a thickness of 1 to 5 μm, for example 2 to 4 μm, such as 3 μm;
preferably, the second film may have a thickness of 0.2 to 5 μm, for example 0.7 to 3 μm, such as 1.0 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm.
Preferably, the diameter of the microdisk can be 10-50 μm, such as 13-20 μm.
The invention also provides a micro-disk array, which is composed of a plurality of micro-disks with supporting columns for supporting;
according to the present invention, the microdisk array may or may not be coupled to each other.
The invention also provides a whispering gallery mode optical resonant microcavity comprising the microdisk or microdisk array with the strut support.
The invention also provides a whispering gallery mode photonic device comprising the whispering gallery mode optical resonant microcavity.
Preferably, the whispering gallery mode photonic device is a high quality factor whispering gallery mode photonic device.
According to the invention, the photonic device may be selected from photonic laser integrated components, photonic modulation integrated components and photonic sensing integrated components.
The invention also provides a photonic testing method comprising inputting light into the microdisk or microdisk array with the pillar support.
Preferably, in the photonic testing method, the signal is input by means of near-field coupling or far-field pumping, and the output signal light is detected by means of near-field coupling or far-field collection.
The invention also provides a microdisk or microdisk array with a support for a whispering gallery mode photonic device with a high quality factor, wherein the microdisk is prepared by the above preparation method.
The invention also provides a preparation method of the whispering gallery mode optical resonance microcavity or the whispering gallery mode photonic device, which comprises the preparation method of the microdisk supported by the support.
The invention also provides the use of said microdisk or microdisk array with pillar support for the production of whispering gallery mode optically resonant microcavities or whispering gallery mode photonic devices.
The invention has the beneficial effects that:
electron beam exposure is a technique that uses an electron beam to directly draw or project a copy image on a lens coated with a photoresist. According to the invention, two layers of electron beam resists with different molecular weights are spin-coated to serve as exposure samples, incident particles break chains in the electron beam resist structure, and an exposed area is easier to dissolve. After the development is finished, the glue at the shadow part of the exposed pattern is dissolved. Because the electron beam resists with different molecular weights have different sensitivities to electron beams, the lower-layer electron beam resist with low molecular weight has higher sensitivity, and the upper-layer electron beam resist with high molecular weight has lower sensitivity, so that a micro-disk or micro-disk array structure with a support post support is formed. Due to the reduced dissipation of the optical field to the substrate, a microdisk cavity of high quality factor is formed. Optical signals are input into a micrometer disc structure with a support column support in an excitation, scattering or near field coupling mode to form conduction and limited region of light in a polymer structure, resonance effect of a whispering gallery mode is realized, a modulation spectrum with narrow line width is obtained in a high-quality optical microcavity, amplified stimulated emission of the light in the whispering gallery mode can be realized through optical gain, and further, in a plurality of coupled or uncoupled micro-disc array structures, optical signal processing and high-sensitivity response to external stimulation are realized according to the modulation spectrum and wavelength change information of a laser mode.
By utilizing the locatability and high repetition precision of the printing technology, the invention can prepare the microdisk arrays in various arrangement modes on a centimeter-sized planar substrate in a large area. Resonant electromagnetic fields in whispering gallery modes are formed at the edge of the microdisk, thereby modulating and selectively enhancing the optical signal. The whispering gallery mode photonic elements coupled with the multiple micro-disk cavities are prepared by utilizing the point, and a series of photonic functions such as micro-cavity lasers, filtering, coupled cavity optical waveguides, slow light, sensing and the like can be realized.
In addition, the microdisk and microdisk array structure with the support column support, the whispering gallery mode optical resonance microcavity and the photonic device have the advantages of simple preparation process, convenient operation, low cost, large-scale preparation, high quality factor and spectrum modulation function, solve the problem that the substrate needs to be etched independently in the preparation process of the traditional high-quality microcavity, and realize the coupling effect of a plurality of microcavities; the method has wide practicability and is particularly suitable for the design and application of photonic integrated components.
Drawings
FIG. 1 is a schematic diagram of a method for preparing a microplate having a pillar support according to the present invention.
Fig. 2 is a bright field photograph of a microdisk array with support posts according to the present invention.
FIG. 3 shows a scanning electron micrograph and a laser spectrum of a microdisk having a pillar support according to the present invention.
Fig. 4 is a schematic view of whispering gallery mode micro laser measurement provided by the present invention.
FIG. 5 is a fluorescent photograph of a coupled microdisk having a pillar support according to the present invention.
FIG. 6 is an electron micrograph of a cavity-coupled optical waveguide structure with a pillar support according to the present invention.
Detailed Description
The invention will be further illustrated with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. After reading the description of the invention, one skilled in the art can make various changes or modifications to the invention, and such equivalents fall within the scope of the invention.
Instruments and reagents
FEI Nova Nano450 scanning electron microscope equipped with Raith ELPHY Quantum Pattern Generator for electron beam exposure. PMMA is available from sigma aldrich and solvent is available from beijing chemicals. The water-soluble polymer conductive adhesive (AR-PC 5090.02) was obtained from Beijing Vigorti technologies, Inc.
Unless otherwise indicated, the instruments and reagents used in the present invention are commercially available.
Example 1: dye-doped microdisk with support structure for generating whispering gallery mode micron laser
As shown in fig. 4, the whispering gallery mode micro-laser material is a microdisk array structure (1) with a support structure provided by the inventor, a pulse laser (2) (430 nm) of a titanium sapphire laser is used as a pump light, the spot diameter is 30 microns, the light intensity is 145 microwatts, and partial areas of a single microdisk array structure with a support pillar are irradiated, so that the dye doped in the microdisk array structure emits light to form gain. The overflowing light of the micro-disk cavity is collected through a 50-time objective lens (3), and exciting light is filtered by an optical filter (4) (520 nm long pass) to obtain multimode laser (5) generated by the whispering gallery mode micro-cavity.
The preparation method of the microdisk array with the supporting structure used in the method is as follows:
first, a first electron resist film was prepared, and 2 g of polymethyl methacrylate (PMMA) having a molecular weight of 90k was slowly added to 10 ml of chlorobenzene (C) at 1300 rpm6H5Cl) was stirred for several hours to be sufficiently dissolved to form a clear solution, and the resulting mixed solution was spin-coated (1000 rpm) on a silicon substrate to form a thin film having a thickness of about 2 μm.
Then, a second electron resist film was prepared on the first electron resist film, and 1.2 g of polymethyl methacrylate (PMMA) having a molecular weight of 996k was slowly added to 10 ml of chlorobenzene (C) at 1300 rpm6H5Cl) was stirred for several hours to be sufficiently dissolved to form a clear solution, 60 mg of 1, 4-bis (α -cyano-4-dianilinophenylstyryl) -2, 5-diphenylbenzene (CNDPASDB) was added to the clear solution, and stirring was continued for 10 minutes to uniformly disperse CNDPASDB in the clear solution, and the resulting mixed solution was spin-coated (1500 rpm) on a roll of aOn the first electronic resist film, a film having a thickness of about 1.2 μm was formed. A microdisk array having a diameter of 15 μm was exposed using an electron beam exposure system (EBL), and developed and fixed for 30 seconds by a developing solution (methyl isobutyl ketone MIBK: isopropyl alcohol IPA ═ 1:3(v: v)) and a fixing solution (isopropyl alcohol IPA), respectively. And obtaining the polymer microdisk array laser with the supporting structure.
Example 2: micro-disk coupling cavity with support column support for realizing single-mode laser
The used material is a micro-disk array structure provided by the inventor, pulse laser (430 nanometers) of a titanium sapphire laser is used as pump light, the diameter of a light spot is 40 micrometers, and the whole coupled micro-disk array structure is irradiated at 45 degrees in an inclined mode, so that the dye doped in the coupled micro-disk array structure emits light to form gain. The overflowing light of the micro-disk cavity is collected through a 50-time objective lens, and the exciting light is filtered by an optical filter (520 nm long pass) to obtain the laser spectrum of the whispering gallery mode micro-cavity. By adjusting the diameters of the two coupling disks and utilizing the vernier effect formed by the coupling of the two different microdisk cavities, the resonance mode at the same wavelength position is selectively amplified, and the mode selection function of the laser is realized to obtain the single-mode laser.
The preparation method of the coupling micro-disk array with the supporting structure used in the method comprises the following steps:
first, a first electron resist film was prepared, and 2 g of polymethyl methacrylate (PMMA) having a molecular weight of 90k was slowly added to 10 ml of chlorobenzene (C) at 1300 rpm6H5Cl) was stirred for several hours to be sufficiently dissolved to form a clear solution, and the resulting mixed solution was spin-coated (1000 rpm) on a silicon substrate to form a thin film having a thickness of about 2 μm.
Then, a second electron resist film was prepared on the first electron resist film, and 1.2 g of polymethyl methacrylate (PMMA) having a molecular weight of 996k was slowly added to 10 ml of chlorobenzene (C) at 1300 rpm6H5Cl) was stirred for several hours to dissolve it sufficiently to form a clear solution, and then 60 mg of CNDPASDB was added to the clear solution and stirring was continued for 10 minutes to uniformly disperse CNDPASDB in the clear solution. The resulting mixed solution was spin-coated (1500)Rpm) on the first electronic resist film, a film about 1.2 microns thick was formed. After drawing a 15 micron and 13 micron microdisk tangential coupling array structure by a pattern generator and exposing by electron beam, development was performed for 30s and fixation was performed for 30s by a developing solution (methyl isobutyl ketone MIBK: isopropyl alcohol IPA ═ 1:3(v: v)) and a fixing solution (isopropyl alcohol IPA), respectively. And obtaining the polymer coupled microdisk array laser with the supporting structure.
Example 3: multi-micro-disk array for coupling cavity optical waveguide element
The material used for the optical waveguide structure (comprising 9 microdisk) with the support column coupled cavity provided by the inventor is that pulsed laser (430 nm) of a titanium sapphire laser is used as pump light, the diameter of a light spot is 20 microns, and the whole coupled microdisk array structure is irradiated at 45-degree inclination, so that the dye doped in the coupled microdisk array structure emits light to form gain. The overflowing light of the end microdisk cavity is collected through a 50-time objective lens, the exciting light is filtered by an optical filter (520 nm long pass), and the laser signal of the initial microdisk can be collected at the end through the conduction of 8 microdisks.
The preparation method of the multi-microdisk array used in the method comprises the following steps:
the preparation method of the coupling micro-disk array with the supporting structure used in the method comprises the following steps:
first, a first electron resist film was prepared, and 2 g of polymethyl methacrylate (PMMA) having a molecular weight of 90k was slowly added to 10 ml of chlorobenzene (C) at 1300 rpm6H5Cl) was stirred for several hours to be sufficiently dissolved to form a clear solution, and the resulting mixed solution was spin-coated (1000 rpm) on a silicon substrate to form a thin film having a thickness of about 2 μm.
Then, a second electron resist film was prepared on the first electron resist film, and 1.2 g of polymethyl methacrylate (PMMA) having a molecular weight of 996k was slowly added to 10 ml of chlorobenzene (C) at 1300 rpm6H5Cl) was stirred for several hours to dissolve it sufficiently to form a clear solution, and then 60 mg of CNDPASDB was added to the clear solution and stirring was continued for 10 minutes to uniformly disperse CNDPASDB in the clear solution. Will obtain a mixed solutionA film of about 1.2 microns thick was formed on the first electronic resist film by spin coating (1500 rpm). The multi-micro-disk coupling structure EBL exposure diameter is drawn by a pattern generator to be 15-micron and 13-micron micro-disk tangent coupling array structures, and the structures are respectively developed for 30s and fixed for 30s by a developing solution (methyl isobutyl ketone MIBK: isopropanol IPA-1: 3(v: v)) and a fixing solution (isopropanol IPA). And obtaining the polymer coupled microdisk array laser with the supporting structure.
Claims (25)
1. A microdisk having a support post support, wherein the support post comprises a first e-beam resist, the microdisk comprises a second e-beam resist, and the first e-beam resist has a lower molecular weight than the second e-beam resist; the first and second e-beam resists are selected from linear polymers of different molecular weights; the linear polymers of different molecular weights are selected from the following polymers: copolymers of polymethyl methacrylate, poly (butene-1-sulfone), poly (p-tert-butoxy-2-methylstyrene), glycidyl methacrylate and ethyl acrylate.
2. The microdisk of claim 1, wherein a substrate is further disposed below the pillar; the substrate is selected from one or more of the following: silicon wafer, quartz wafer, glass wafer, conductive glass wafer, magnesium fluoride, metal film, reinforced reflector, polyethylene naphthalate or polyethylene terephthalate.
3. The microdisk of claim 1, wherein the linear polymers having different molecular weights are selected from at least two of the group consisting of polymethylmethacrylate having a molecular weight of 996k, polymethylmethacrylate having a molecular weight of 350k, polymethylmethacrylate having a molecular weight of 120k, polymethylmethacrylate having a molecular weight of 90k, and polymethylmethacrylate having a molecular weight of 15 k.
4. The microdisk of claim 1, wherein the pillar is comprised of a first e-beam resist and the microdisk is comprised of a second e-beam resist.
5. The method for preparing a microdisk according to any one of claims 1 to 4, comprising the steps of:
1) mixing a first electron beam resist and a first solvent, and mixing a second electron beam resist and a second solvent to obtain a solution of the first electron beam resist and a solution of the second electron beam resist respectively;
2) adding a luminescent material into the solution of the second electron beam resist to obtain a mixed solution;
3) spin-coating a solution of a first electron beam resist on a substrate to obtain a first film containing the first electron beam resist;
4) spin-coating the mixed solution obtained in the step 2) on the first film, drying, and forming a second film containing a second electron beam resist on the first film;
5) preparing a disc pattern by electron beam exposure, and washing by a developing solution and a fixing solution to form the microdisk with the support pillar.
6. The production method according to claim 5, wherein:
the concentration of the solution of the first electron beam resist and the concentration of the solution of the second electron beam resist are 70-250 mg/ml.
7. The production method according to claim 5, wherein: the first solvent and the second solvent are the same or different and are selected from one or more of the following solvents: chlorobenzene, anisole, ethyl lactate, toluene.
8. The production method according to claim 5, wherein: the luminescent material is selected from one or more of organic dye, quantum dot and rare earth doped nano particle; the organic dye is selected from one or more of rhodamine, coumarin, nile blue and oligomeric styrene.
9. The production method according to claim 5, wherein: the mass percentage of the luminescent material in the second electron beam resist is 0.2-10%.
10. The production method according to claim 5, wherein: and the used substrate is a non-conductive substrate, a layer of conductive adhesive is coated on the second electronic resist in a spin mode, and the conductive adhesive is removed after the electron beam exposure is finished.
11. The production method according to claim 5, wherein: spin-coating the conductive adhesive at the rotation speed of 1000-.
12. The production method according to claim 5, wherein: the drying mode of the conductive adhesive is hot plate drying, the temperature is 120-200 ℃, and the drying time is 1-30 minutes.
13. The production method according to claim 10, wherein: the conductive adhesive is selected from water-soluble polymer conductive adhesives, and the water-soluble polymer conductive adhesives are selected from solutions of polyaniline and derivatives thereof in a mixed solvent of water and isopropanol.
14. The production method according to claim 5, wherein: the developing solution is selected from a mixed solution of methyl isobutyl ketone and isopropanol in a volume ratio of 1:3, and the developing time is 10-60 s; the fixing solution is selected from isopropanol, and the fixing time is 10-60 s.
15. The production method according to claim 5, wherein:
step 1) further comprises the step of stirring after mixing; the stirring temperature is 15-80 ℃; stirring for 1-36 hours;
in the step 3), the spin coating speed is 500-5000 rpm.
16. The production method according to claim 5, wherein: step 3) further comprises a drying step after spin coating the solution of the first electron beam resist on the substrate; the drying mode is hot plate drying, the temperature is 120-200 ℃, and the drying time is 1-30 minutes.
17. The production method according to claim 5, wherein: the thickness of the first film is 1-5 mu m; the thickness of the second film is 0.2-5 mu m; the diameter of the microdisk is 10-50 mu m.
18. A microdisk array comprised of a plurality of microdisks according to any one of claims 1 to 3, with or without coupling between microdisks in the microdisk array.
19. A whispering gallery mode optical resonant microcavity comprising a microdisk according to any one of claims 1 to 3 or an array of microdisks according to claim 18.
20. A whispering gallery mode photonic device comprising the whispering gallery mode optically resonant microcavity of claim 19.
21. The photonic device of claim 20, selected from the group consisting of photonic laser integrated components, photonic modulation integrated components, and photonic sensing integrated components.
22. A photonic testing method comprising inputting light into the microdisk of any one of claims 1-3 or the microdisk array of claim 18.
23. The method of claim 22, wherein the signal is input by near-field coupling or far-field pumping, and the output signal light is detected by near-field coupling or far-field collection.
24. Use of a microdisk according to any one of claims 1 to 3 or of an array of microdisks according to claim 18 for the production of whispering gallery mode optically resonant microcavities or whispering gallery mode photonic devices.
25. The use according to claim 24, wherein the photonic device is selected from photonic laser integrated components, photonic modulation integrated components and photonic sensing integrated components.
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