CN113358576B - Full silicon dioxide spinning device simulation method - Google Patents
Full silicon dioxide spinning device simulation method Download PDFInfo
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- CN113358576B CN113358576B CN202110619677.3A CN202110619677A CN113358576B CN 113358576 B CN113358576 B CN 113358576B CN 202110619677 A CN202110619677 A CN 202110619677A CN 113358576 B CN113358576 B CN 113358576B
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- wall cavity
- silicon dioxide
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 35
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 31
- 238000004088 simulation Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000009987 spinning Methods 0.000 title abstract description 6
- 239000013307 optical fiber Substances 0.000 claims abstract description 32
- 238000001228 spectrum Methods 0.000 claims abstract description 6
- 238000009826 distribution Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 230000033228 biological regulation Effects 0.000 claims description 4
- 239000008358 core component Substances 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 4
- 239000011797 cavity material Substances 0.000 claims 25
- 238000005259 measurement Methods 0.000 abstract description 2
- 230000004069 differentiation Effects 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 238000000411 transmission spectrum Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 25
- 229960001866 silicon dioxide Drugs 0.000 description 22
- 239000013078 crystal Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009022 nonlinear effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000002077 nanosphere Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
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- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a method for simulating a spinning device of all silicon dioxide, belonging to the field of micro-nano optics; the method specifically comprises the following steps: firstly, preparing an optical fiber or waveguide coupled echo wall coupling structure; the optical fiber is moved to be positioned in the evanescent field range of the echo wall cavity; then, opening a laser, inputting laser into the echo wall cavity, scanning a spectrum, and determining the working wavelength by finding the lowest point of the transmission spectrum; dividing the input laser field into two equal parts and respectively inputting the two equal parts into the echo wall micro-cavity in the clockwise direction and the anticlockwise direction; detecting the intensity of the clockwise and anticlockwise modes of each cavity by using photoelectric detection; gradually increasing the power of input laser, and generating differentiation in the light field output in two directions, wherein the differentiation corresponds to the measurement result of the classical spin problem; the invention realizes the simulation of spin by using the structure which is thought to be manufactured, and has the characteristic that the resonance frequency can be modulated.
Description
Technical Field
The invention relates to the field of simulation of optical micro-cavities, in particular to a self-rotating state simulation method of a silicon dioxide echo wall micro-cavity.
Background
The optical microcavity is one kind of optical resonant cavity capable of limiting light field in micron level area and consists of light field storage and light and matter interacting generating platform.
For a spherical optical microcavity, one important mode in which the optical field exists is the whispering gallery mode, which is formed on the principle of total reflection of light in the whispering gallery optical cavity, and can exist stably only when the path through which the light passes in the cavity forms a closed path and the length of this path is an integer multiple of the wavelength of the light. The light in the whispering gallery mode is not completely confined inside the geometry, but there is also a portion of light outside the geometry, which is referred to as the evanescent field. When a medium structure with a near wavelength scale exists in an evanescent field, the optical path of the whole echo wall mode can be changed, and the resonance frequency of the echo wall mode is further changed, so that the mode regulation is realized.
The optical nonlinear effect refers to the correspondence that the evolution rule of the optical field changes along with the intensity of the optical field, and almost all materials have the nonlinear effect. In the silicon dioxide whispering gallery optical microcavity, molecules have asymmetry, which can induce the nonlinear effect. The properties of the optical field in the silica microcavity can be subject to qualitative changes when the optical field therein exceeds a certain intensity.
The currently used optical spin simulation method simulates spin by using a strong nonlinear crystal, such as lithium niobate, to make the phase of the optical field in the crystal oscillate. The measurement of the optical field phase must be involved in the process, so that the manufacturing cost of a simulation instrument is extremely high, and in addition, the preparation process of the nonlinear crystals such as lithium niobate is complex, and the manufacturing cost is also greatly improved.
Disclosure of Invention
The invention directly uses silicon dioxide as a basic material, enables the nonlinearity of the silicon dioxide to be excited by the characteristic of strong locality of the echo wall microcavity, can generate a spin simulator for directly measuring the light field intensity under the nonlinearity, and particularly relates to a method for simulating a spin device of all-silicon dioxide.
The method for simulating the all-silicon-dioxide spinning device comprises the following specific steps:
step one, building a silicon dioxide echo wall micro-cavity resonance frequency regulation and control device (or directly preparing a corresponding chip by applying a photoetching technology);
the method specifically comprises the following steps: the laser is coupled with one end of an optical fiber through a flange, the optical fiber is carried above the core component, the other end of the optical fiber is connected with the optical detector through the flange, and finally the optical detector is connected with the oscilloscope.
The core assembly comprises: silicon dioxide echo wall cavity, optical fiber/prism/waveguide, laser and photoelectric detector.
Two telescopic supports are arranged above the outer side of the echo wall cavity, optical fibers/prisms/waveguides are carried on the supports, and the distance between the optical fibers and the echo wall cavity is adjusted by adjusting the length of the telescopic supports; meanwhile, the lower part of the echo wall cavity is placed on the shifter, and the echo wall cavity is driven to move up and down by moving the shifter, so that the distance between the echo wall cavity and the optical fiber is adjusted.
Moving the echo wall cavity through the shifter to enable the echo wall cavity to be located in the evanescent field range of the optical fiber;
the distance between the optical fiber and the echo wall cavity is about 100 nm.
Step three, opening a laser, inputting laser into the echo wall cavity from clockwise and anticlockwise at the same power, and determining the resonance frequency of the echo wall micro-cavity through spectrum scanning;
and step four, after the laser frequency is adjusted to the resonance frequency, the power of the laser is gradually increased from zero, the intensity output from the echo wall in two directions is the same at the beginning, and the power is continuously increased. At a certain power, the laser power in the two directions will be different, and this value is the analog threshold h of the cavity.
Step five, recording the upper threshold value h, inputting the laser power above the same threshold value every time, taking 1.1h as an example, testing the strength of the output intensity of the system in two directions every time, and defining the clockwise intensity as the spin-up and the counterclockwise intensity as the spin-down (or vice versa);
the above operation recording results can be taken for a single spin simulation.
For multiple spin simulations, multiple (e.g., 100) results may be taken and the distribution recorded. The corresponding distribution results in the distribution of simulated spins.
The invention has the advantages that:
a simulation method of a spinning device of the all silicon dioxide, use the all silicon dioxide device to imitate, do not need the complicated crystal production technology, pollution-free; the intensity of the light field can be directly measured, and the testing device has a simple structure; the optical signal can be directly changed into an electric signal through the photoelectric detector, and the compatibility with the existing electronic device is good.
Drawings
FIG. 1 is a flow chart of a method for modulating the whispering gallery microcavity resonance frequency of a magneto-optical nanosphere of the present invention;
FIG. 2 is a schematic diagram of a whispering gallery microcavity resonance frequency control device of the magneto-optical nanospheres constructed in the present invention;
fig. 3 is a diagram illustrating core components of the resonant frequency control device according to the present invention.
Detailed Description
The present invention will be described in further detail and with reference to the accompanying drawings so that those skilled in the art can understand and practice the invention.
The invention discloses a method for modulating the frequency of a whispering gallery microcavity resonance by using silicon dioxide, which is a spinning optical fiber simulation scheme under nonlinear induction. The method specifically comprises the following steps: the silicon dioxide microdisk cavity has a scale structure close to the communication wavelength 1550nm which can generate strong optical local modes, and the clockwise and counterclockwise modes in the silicon dioxide whispering gallery optical microcavity have exactly the same resonant frequency, so that both modes can be excited by the same laser beam, with the resonant frequency related to the size of the cavity. The silicon dioxide microdisk cavity structure with the diameter of 1-100 microns is adopted, wherein silicon dioxide molecules have weak nonlinearity due to the existence of a non-completely symmetrical structure of the molecules; the strong local field in the echo wall mode enables the nonlinear characteristics to generate influence even under weak nonlinearity, so that the input laser intensity can be adjusted to be above the nonlinear threshold of the echo wall microcavity, the clockwise mode and the anticlockwise mode are split in intensity, and the splitting is utilized to realize the hardware simulation of the physical quantity of spin.
The implementation method of the spin simulation device of the silicon dioxide microdisk cavity is shown in fig. 1, and comprises the following specific steps:
step one, building a sound echo wall micro-cavity resonance frequency regulation and control device of silicon dioxide (or directly preparing a corresponding chip by applying a photoetching technology);
the method specifically comprises the following steps: the laser is coupled with one end of an optical fiber through a flange, the optical fiber is carried above the core component, the other end of the optical fiber is connected with the optical detector through the flange, and finally the optical detector is connected with the oscilloscope.
The core assembly comprises: silicon dioxide echo wall cavity, optical fiber/prism/waveguide, laser and photoelectric detector.
Two telescopic supports are arranged above the outer side of the echo wall cavity, optical fibers/prisms/waveguides are carried on the supports, and the distance between the optical fibers and the echo wall cavity is adjusted by adjusting the length of the telescopic supports; meanwhile, the lower part of the echo wall cavity is placed on the shifter, and the shifter is moved to drive the echo wall cavity to move up and down, so that the distance between the echo wall cavity and the optical fiber is adjusted.
The echo wall optical microcavity is in a disc-shaped, spherical, micro-ring core or columnar structure in geometry, and the material of the optical microcavity is silicon dioxide.
Moving the echo wall cavity through the shifter to enable the echo wall cavity to be located in the evanescent field range of the optical fiber;
the distance between the optical fiber and the echo wall cavity is about 100 nm.
Step three, opening a laser, inputting laser into the echo wall cavity from clockwise and anticlockwise at the same power, and determining the resonance frequency of the echo wall micro-cavity through spectrum scanning;
and step four, after the laser frequency is adjusted to the resonance frequency, gradually increasing the power of the laser from zero, and continuously increasing the power when the intensities output from the echo wall in two directions are the same at the beginning. At a certain power, the laser power in the two directions will be different, and this value is the analog threshold h of the cavity.
Step five, recording the upper threshold value h, inputting the laser power above the same threshold value every time, taking 1.1h as an example, testing the strength of the output intensity of the system in two directions every time, and defining the clockwise intensity as the spin-up and the counterclockwise intensity as the spin-down (or vice versa);
the above operation recording results can be taken for a single spin simulation.
For multiple spin simulations, the distribution can be recorded taking the results multiple times (e.g., 100 times). The corresponding distribution results in the distribution of simulated spins.
Examples
The selected laser is standard 1550nm communication light source with power of 0.3mw and echo wall cavity with quality factor of 1 × 10 8 Silicon dioxide disk-shaped cavities.
The input light of the laser is coupled into the silicon dioxide disc-shaped cavity, the bonding area of the optical fiber and the disc is adjusted, an obvious absorption valley is observed in the spectrum scanning of the oscilloscope, and the spectrum scanning range is locked to be near the absorption valley; the frequency of the laser light is modulated to the region of the absorption valley.
Gradually increasing the laser intensity to 0.3mw, recording the output laser intensity at two output ports of the microcavity, recording the laser intensity of a strong mode as 1, recording the laser intensity of a weak mode as 0, bringing the intensity of a clockwise mode into an upper diagonal element, bringing the intensity of a counterclockwise mode into a lower diagonal element, and obtaining the simulated spin matrix.
It is finally noted that the disclosed embodiments are intended to aid in the further understanding of the invention, but that those skilled in the art will appreciate that: various substitutions and modifications are possible without departing from the spirit and scope of the invention and the appended claims. Therefore, the invention should not be limited to the embodiments disclosed, but the scope of the invention is defined by the appended claims.
Claims (5)
1. A spin simulation device of a silicon dioxide micro-disk cavity is characterized by comprising the following specific steps:
step one, building a resonant frequency regulation and control device of a silicon dioxide echo wall cavity;
the method specifically comprises the following steps: the laser is coupled with one end of an optical fiber through a flange, the optical fiber is carried above the core component, the other end of the optical fiber is connected with a light detector through the flange, and finally the light detector is connected with an oscilloscope;
the core assembly comprises: a silica echo wall cavity, an optical fiber or a prism or a waveguide, a laser and a photoelectric detector;
two telescopic supports are arranged above the outer side of the echo wall cavity, optical fibers or prisms or waveguides are carried on the supports, and the distance between the optical fibers or prisms or waveguides and the echo wall cavity is adjusted by adjusting the length of the telescopic supports; meanwhile, the lower part of the echo wall cavity is placed on a shifter, and the shifter is moved to drive the echo wall cavity to move up and down, so that the distance between the echo wall cavity and the optical fiber or the prism or the waveguide is adjusted;
the echo wall cavity is in a disc-shaped, spherical, micro-ring core or columnar structure in geometry, and the material of the echo wall cavity is silicon dioxide;
moving the echo wall cavity through the shifter to enable the echo wall cavity to be located in the evanescent field range of the optical fiber, wherein the distance between the optical fiber and the echo wall cavity is about 100 nm;
step three, opening a laser, and determining the resonant frequency of the echo wall cavity through spectrum scanning after the laser is input into the echo wall cavity from the clockwise and the anticlockwise at the same power;
after the laser frequency is adjusted to the resonance frequency, the power of the laser is gradually increased from zero, the output intensity in two directions of the echo wall cavity is the same at the beginning, and the power is continuously increased; under a certain power, the laser power in two directions can be different, and the value is the simulation threshold h of the cavity;
step five, recording the upper threshold value h, inputting the laser power above the same threshold value every time, testing the strength of the output intensity of the system in two directions every time, and defining the clockwise intensity as upward spin and the anticlockwise intensity as downward spin;
taking the recorded result of the previous operation for single spin simulation;
for 100 spin simulations, the distribution of the results is recorded, and the corresponding distribution results are the distribution of the simulated spins.
2. The silicon dioxide micro-disk cavity spin simulation device of claim 1, wherein the echo wall cavity material in step one is pure silicon dioxide or doped silicon dioxide with other materials.
3. The silicon dioxide micro-disk cavity spin simulation device of claim 1, wherein in the second step, the echo wall cavity is directly coupled or coupled through an optical fiber, a waveguide or a prism.
4. The silicon dioxide microdisk cavity spin emulation device of claim 1, wherein the spin-up and spin-down are represented by the clockwise mode and the counter-potential needle mode of the light in the whispering gallery cavity, respectively, or the spin-down and spin-up are represented by the clockwise mode and the counter-potential needle mode of the light in the whispering gallery cavity, respectively.
5. The silicon dioxide microdisk cavity spin simulation device of claim 1, operable to achieve simulation of classical spin states and quantum spin states.
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| US6781696B1 (en) * | 1999-10-06 | 2004-08-24 | The Board Of Regents For Oklahoma State University | Apparatus and method for a microsphere whispering-gallery mode evanescent-wave sensor |
| WO2016130594A1 (en) * | 2015-02-09 | 2016-08-18 | Washington University | Micro-resonator and fiber taper sensor system |
| CN104868351B (en) * | 2015-04-27 | 2018-08-03 | 清华大学 | A method of adjusting Whispering-gallery-mode microcavity resonant frequency |
| CN108896512A (en) * | 2018-07-18 | 2018-11-27 | 清华-伯克利深圳学院筹备办公室 | The detection device and method of microfluid |
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| CN112290363A (en) * | 2020-11-10 | 2021-01-29 | 中国计量大学 | Method for manufacturing low-cost echo wall micro-cavity laser based on erbium-doped microspheres |
| CN112764289A (en) * | 2021-01-11 | 2021-05-07 | 北京邮电大学 | Method for converting optical wavelength based on spherical magneto-optical material by using adjustable magnetic field |
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