CN1629663A - Silicon ridge optical waveguide with novel crosssectional shape on an insulator and method for manufacturing the same - Google Patents
Silicon ridge optical waveguide with novel crosssectional shape on an insulator and method for manufacturing the same Download PDFInfo
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- CN1629663A CN1629663A CN 200310122347 CN200310122347A CN1629663A CN 1629663 A CN1629663 A CN 1629663A CN 200310122347 CN200310122347 CN 200310122347 CN 200310122347 A CN200310122347 A CN 200310122347A CN 1629663 A CN1629663 A CN 1629663A
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Abstract
This invention relates to a silicon backbone light waveguide of a new section shape on an insulator and its manufacturing method, in which, the backbone section is composed of a rectangular top and an isosceles trapezoid bottom, the bottom limitation layer of the waveguide to light is the isolation layer, the top surface is covered by silicon oxide or nitride. Its preparation method includes: a, processing mask of light waveguide on SOI wafer by photo-etching, b, dry-etching a backbone waveguide with a rectangular section at the top silicon, c, wet-etching the rectangular waveguide for the second time, d, removing the mask to cover an oxide or nitride layer on the waveguide.
Description
Technical field
(SOI, silicon-on-insulator) ridge optical waveguide and preparation method thereof can be applied in the making of single multimode SOI optical waveguide and SOI waveguide device to the present invention relates to the silicon-on-insulator in optical waveguide technique field, particularly a kind of new cross sectional shape.
Background technology
The research of current optical devices develops towards the direction of material, structure diversification, and wherein silica-based integrated optics is the important directions that people study all the time.The SOI material can be used for making the high-speed cmos device, the technology of SOI material is very ripe simultaneously, the thickness of top silicon surface is unrestricted, can make the SOI optical waveguide of various sizes, SOI optical waveguide technology has the characteristics with the cmos circuit process compatible, so the very suitable making photoelectricity of SOI material mixing integrated chip.Various in recent years SOI base optical passive components, for example optical devices such as the waveguide coupler of SOI material, Electro-optic Modulators, electricity/thermo-optical switch, AWG have obtained increasing concern.And the SOI based optical waveguide is these devices and realizes the basis that silica-based integrated optics is interconnected, and the SOI optical waveguide of design and making function admirable has crucial meaning.The SOI optical waveguide adopts wet etching or dry etching to make usually, wet etching adopts anisotropic solution to carry out etching, can obtaining as shown in Figure 1, the cross section is trapezoidal waveguide, the ridge waveguide 1 and the insulation course 2 that comprise the trapezoid cross section, and silicon substrate 3, waveguide sidewalls and bottom surface be smoother all, and etching surface not damaged layer, etch residue are also seldom.But the SOI ridge waveguide of the trapezoid cross section that wet etching obtains (is generally and utilizes wet method in { 100} silicon chip upper edge＜110〉crystal orientation photoetching, this moment, the etching side was { 111} a face, the 111} face and the angle theta of 100} face is 54.74 °) some optical device of constituting, for example the AWG of SOI material is difficult to obtain good Polarization Dependent Loss performance.The dry etching anisotropy is good, etch rate and crystal orientation are irrelevant, can obtain the ridge waveguide of square-section as shown in Figure 2, the ridge waveguide 4 and the insulation course 2 that comprise the square-section, and silicon substrate 3, polarization insensitive, but the roughness of sidewall and bottom surface is high more a lot of than wet method etching, and the roughness of etching surface can produce directly influence to light-transfer characteristic, the SOI single mode waveguide of while square-section is under the close situation of waveguide parameter, and is more lower slightly than the SOI optical waveguide of trapezoidal sectional shape with the single-mode fiber coupling efficiency.Dry etching is inevitable to form the thin or thick affected layer of one deck at etching surface, and when taking some bromo or carbon containing fluorine base gas to carry out etching, also can there be the skim polymkeric substance in etching surface, and this can all produce bad influence to the optics and the electricity of device.When making some waveguide devices, when for example making hot light or electric light SOI switch, if place, waveguide sidewalls base angle is too steep, be unfavorable for the climbing of electrode in addition, electrode is easy to be burnt, and causes component failure.
Summary of the invention
The object of the present invention is to provide a kind of structure, make the optical waveguide simple relatively, that the smooth not damaged of etching surface does not have the higher relatively new cross sectional shape of SOI of polymer residue, coupling efficiency, with optical property and the electric property that improves waveguide.
For achieving the above object, technical solution of the present invention provides a kind of SOI ridge optical waveguide of new cross sectional shape, its structure comprises: a silicon substrate, the oxide skin(coating) of one deck on the silicon substrate top, and the monocrystalline silicon layer of one deck on the oxide top layer, wherein on the silicon layer on the oxide top layer ridge optical waveguide is arranged, the ridged partial cross section shape of its waveguide is made of a rectangular top and an isosceles trapezoid bottom, waveguide is an insulation course to the lower limit layer of light, and the upper surface of waveguide is by the oxide or the nitride covering of silicon.
Described silicon optical waveguide, the height of the rectangle part of its described ridge waveguide and the height of trapezoidal portions, the ratio that accounts for the ridged overall height can change.
Described silicon optical waveguide, the base angle of its described isosceles trapezoid are 54.74 °.
A kind of method for making of silicon-on-insulator optical waveguide of new cross sectional shape, it may further comprise the steps:
A. on the SOI wafer,, { make optical waveguide mask on the 100} silicon wafer face along＜110〉crystal orientation at top layer by photoetching process;
B. the ridge waveguide that on top layer silicon, is rectangle with cross section of dry etching;
C. on the basis of former mask, carry out secondarily etched to the rectangular ridge waveguide with wet etching;
D. remove mask, capping oxide and/or nitride layer on ridge waveguide are as the waveguide top covering.
Described method, the silicon layer on its insulation course are that { 100} silicon wafer face, the dry etching direction is along＜100〉crystal orientation.
Described method, it carries out when secondarily etched ridge waveguide with wet method, and used wet etching solution is anisotropic etching solution, and the side of resulting trapezoidal waveguide is that { the 111} face, { the 111} face is with { angle of 100} face is 54.74 °.
Described method, its described mask, material can adopt the oxide of metal and/or silicon and/or the nitride of silicon.
Described method, it can adopt different anisotropic wet etch solution according to the difference of mask material.
Described method, it is by changing the etching parameters and the etching time of dry method and wet method, and the height that can change the height of rectangle part of ridge waveguide and trapezoidal portions accounts for the ratio of ridged overall height.
The present invention adopts the method for doing the wet method combination, can obtain cross sectional shape SOI ridge optical waveguide as shown in Figure 3, has carried out solving or improving for the problem that prior art exists.
Structure of the present invention, make simple relatively, etching surface is smooth, not damaged, no polymer residue, coupling efficiency are higher relatively, is beneficial to the climbing of electrode, can improve the optical property of waveguide and the electric property of fiber waveguide device.
Description of drawings
The conventional anisotropic wet etch waveguide of Fig. 1 schematic cross-section;
The conventional dry etching waveguide of Fig. 2 schematic cross-section;
Fig. 3 the present invention does wet method in conjunction with the waveguide schematic cross-section that obtains;
Fig. 4-7 is a process implementing step synoptic diagram of the present invention.
Embodiment
As shown in Figure 4, at first { make optical waveguide mask 9 on the 100} silicon thin layer 8 at the top layer of the SOI material that comprises silicon substrate 3, insulation course 2 along＜110〉direction by photoetching process, mask material can adopt the oxide of metal, silicon, the nitride of silicon, then by dry etch process edge＜100〉crystal orientation etchings, the cross sectional shape that obtains as shown in Figure 5 is the ridge waveguide 10 of rectangle, and the sidewall of gained rectangular waveguide is { 110} a crystal face.According to the proportioning of the different mining that adopts mask material with different etching solutions or change solution, on the dry etching basis, carry out secondarily etched, in secondarily etched process owing to adopted anisotropic etching solution, the sidewall of rectangular waveguide is subjected to etching, width diminishes, etching is carried out downwards simultaneously, obtains trapezoidal waveguide 11 as shown in Figure 6, and its sidewall is { 111} a crystal face.The θ angle is that { the 100} face is with { angle of 111} face is 54.74 °.After obtaining the waveguide of cross sectional shape as shown in Figure 6, remove mask 9, the oxide and/or the nitride layer 7 of silicon on waveguide top surface covers, as shown in Figure 7.In the waveguide fabrication process,, can obtain the high and a high proportion of ridge waveguide of trapezoidal waveguide of different rectangles by changing the etching parameters and the etching time of dry method and wet etching.
Claims (9)
1. the silicon-on-insulator ridge optical waveguide of a new cross sectional shape, its structure comprises: a silicon substrate, one oxide skin(coating) on silicon substrate top, and a monocrystalline silicon layer on the oxide top layer, wherein on the silicon layer on the oxide top layer ridge optical waveguide is arranged, it is characterized in that: the ridged partial cross section shape of waveguide is made of a rectangular top and an isosceles trapezoid bottom, and waveguide is an insulation course to the lower limit layer of light, and the upper surface of waveguide is by the oxide or the nitride covering of silicon.
2. silicon-on-insulator ridge optical waveguide as claimed in claim 1 is characterized in that: the height of the rectangle part of described ridge waveguide and the height of trapezoidal portions, the ratio that accounts for the ridged overall height can change.
3. silicon-on-insulator ridge optical waveguide as claimed in claim 1 is characterized in that: the base angle of described isosceles trapezoid is 54.74 °.
4. the method for making of the silicon-on-insulator ridge optical waveguide of a new cross sectional shape is characterized in that: may further comprise the steps:
A. on the SOI wafer,, { make optical waveguide mask on the 100} silicon wafer face along＜110〉crystal orientation at top layer by photoetching process;
B. the ridge waveguide that on top layer silicon, is rectangle with cross section of dry etching;
C. on the basis of former mask, carry out secondarily etched to the rectangular ridge waveguide with wet etching;
D. remove mask, capping oxide and/or nitride layer on ridge waveguide are as the waveguide top covering.
5, method as claimed in claim 4 is characterized in that, the silicon on the insulation course is that { 100} silicon wafer face, the dry etching direction is along＜100〉crystal orientation.
6, method as claimed in claim 4, it is characterized in that with wet method ridge waveguide is carried out when secondarily etched, used wet etching solution is anisotropic etching solution, the side of resulting trapezoidal waveguide is that { the 111} face, { the 111} face is with { angle of 100} face is 54.74 °.
7, method as claimed in claim 4 is characterized in that, described mask, material can adopt the oxide and/or the silicon nitride of metal mask and/or silicon.
8, as claim 4 or 7 described methods, it is characterized in that,, can adopt different anisotropic wet etch solution according to the difference of mask material.
9, method as claimed in claim 4 is characterized in that, by changing the etching parameters and the etching time of dry method and wet method, the height that can change the height of rectangle part of ridge waveguide and trapezoidal portions accounts for the ratio of ridged overall height.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310122347 CN1629663A (en) | 2003-12-18 | 2003-12-18 | Silicon ridge optical waveguide with novel crosssectional shape on an insulator and method for manufacturing the same |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200310122347 CN1629663A (en) | 2003-12-18 | 2003-12-18 | Silicon ridge optical waveguide with novel crosssectional shape on an insulator and method for manufacturing the same |
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| CN1629663A true CN1629663A (en) | 2005-06-22 |
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| CN 200310122347 Pending CN1629663A (en) | 2003-12-18 | 2003-12-18 | Silicon ridge optical waveguide with novel crosssectional shape on an insulator and method for manufacturing the same |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100406934C (en) * | 2005-08-04 | 2008-07-30 | 浙江大学 | Deep-etched SiO2 ridge waveguide and its preparing process |
| CN100430764C (en) * | 2005-11-18 | 2008-11-05 | 中国科学院半导体研究所 | Photonic crystals splitter based on SOI and preparing method |
| CN102096149A (en) * | 2011-01-19 | 2011-06-15 | 浙江大学 | Silicon-based long-wave infrared waveguide and preparation method thereof |
| CN102540336A (en) * | 2010-12-24 | 2012-07-04 | 苏州东微半导体有限公司 | Manufacture method for planar lightwave circuit (PLC) light device |
| CN101499552B (en) * | 2008-02-01 | 2013-01-02 | 南京理工大学 | Wideband substrate integrated ridge waveguide and analyzing method thereof |
| CN105731352A (en) * | 2016-03-01 | 2016-07-06 | 南京大学 | On-chip integrated arsenic sulfide microdisk cavity and method for manufacturing same |
| CN108254829A (en) * | 2018-01-04 | 2018-07-06 | 华南师范大学 | A kind of design method of the vertical pattern converter of double, asymmetrical |
| CN110709775A (en) * | 2017-07-12 | 2020-01-17 | 应用材料公司 | Method for producing high refractive index waveguide |
| CN112596158A (en) * | 2020-12-22 | 2021-04-02 | 浙江大学绍兴微电子研究中心 | Silicon-based magneto-optical nonreciprocal ridge optical waveguide |
-
2003
- 2003-12-18 CN CN 200310122347 patent/CN1629663A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100406934C (en) * | 2005-08-04 | 2008-07-30 | 浙江大学 | Deep-etched SiO2 ridge waveguide and its preparing process |
| CN100430764C (en) * | 2005-11-18 | 2008-11-05 | 中国科学院半导体研究所 | Photonic crystals splitter based on SOI and preparing method |
| CN101499552B (en) * | 2008-02-01 | 2013-01-02 | 南京理工大学 | Wideband substrate integrated ridge waveguide and analyzing method thereof |
| CN102540336A (en) * | 2010-12-24 | 2012-07-04 | 苏州东微半导体有限公司 | Manufacture method for planar lightwave circuit (PLC) light device |
| CN102096149A (en) * | 2011-01-19 | 2011-06-15 | 浙江大学 | Silicon-based long-wave infrared waveguide and preparation method thereof |
| CN102096149B (en) * | 2011-01-19 | 2012-08-15 | 浙江大学 | Silicon-based long-wave infrared waveguide and preparation method thereof |
| CN105731352A (en) * | 2016-03-01 | 2016-07-06 | 南京大学 | On-chip integrated arsenic sulfide microdisk cavity and method for manufacturing same |
| CN110709775A (en) * | 2017-07-12 | 2020-01-17 | 应用材料公司 | Method for producing high refractive index waveguide |
| CN108254829A (en) * | 2018-01-04 | 2018-07-06 | 华南师范大学 | A kind of design method of the vertical pattern converter of double, asymmetrical |
| CN112596158A (en) * | 2020-12-22 | 2021-04-02 | 浙江大学绍兴微电子研究中心 | Silicon-based magneto-optical nonreciprocal ridge optical waveguide |
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