CN109445032A - SiON waveguide and optical coupling structure and preparation method thereof - Google Patents
SiON waveguide and optical coupling structure and preparation method thereof Download PDFInfo
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- CN109445032A CN109445032A CN201910014594.4A CN201910014594A CN109445032A CN 109445032 A CN109445032 A CN 109445032A CN 201910014594 A CN201910014594 A CN 201910014594A CN 109445032 A CN109445032 A CN 109445032A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/262—Optical details of coupling light into, or out of, or between fibre ends, e.g. special fibre end shapes or associated optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/138—Integrated optical circuits characterised by the manufacturing method by using polymerisation
Abstract
The present invention provides a kind of SiON waveguide and optical coupling structures, including SiON waveguide, are input waveguide；SiO 2 waveguide is coated on the outside of SiON waveguide；Taper SiON waveguide is coated on the inside of SiO 2 waveguide, and is in the lower section of SiON waveguide horizontal plane, and cross sectional dimensions is less than the cross sectional dimensions of SiON waveguide, cross sectional dimensions along optical transport direction flaring；SiON output waveguide is connect with taper SiON waveguide.And the method for production SiON waveguide and optical coupling structure.The present invention coats one layer of SiO2 in SiON waveguide; this structure is set to separate and play a protective role with air; SiON waveguide is different from the refractive index of taper SiON waveguide; SiON waveguide can be matched with optical fiber; taper SiON waveguide can accomplish small size again; by this kind of coupled structure, device can be done small, and reduce energy consumption.
Description
Technical field
The present invention relates to technical field of optical fiber communication, more particularly, to a kind of SiON waveguide and optical coupling structure and its system
Make method.
Background technique
With the continuous rapid development of silicon based photon integrated chip technology, such as chip and chip chamber are realized using photon chip
Or the short distance optic communication in chip becomes closer to reality.Silicon-on-insulator (SilicononInsulator, SOI) is in light
There is excellent characteristics, and because silicon and SiO on2Or air has very big refringence, the optical waveguide of silicon substrate
Ability with very strong limitation light field, so the optical waveguide of silicon substrate can be fabricated to very small size, its usual cross section
Size is less than 1 μm.While very the silicon waveguide belt of small size carrys out high device integration, also serious ask for one, band
Topic --- the coupling loss of silicon waveguide and optical fiber is very big.In general, the core diameter size of single mode optical fiber is about 8~10 μm, far
Much larger than the SOI optical waveguide that cross sectional dimensions is usually less than 1 μm, light enters 102 meeting of silicon waveguide of this small size from optical fiber 101
Very big loss is brought, optical fiber and the coupling schematic diagram of silicon waveguide are as shown in Figure 1.Therefore, optical fiber and silicon waveguide how to be realized
Efficient coupling is a critical issue of silicon-based optical interconnection urgent need to resolve.
If it is intended to realizing the efficient coupling of optical fiber and silicon waveguide, need to realize by certain moduli spot converter.Mould
Spot converter can be divided into two classes according to coupled modes: vertical coupled and end coupling.The spot-size converter master of vertical coupled type
Refer to grating coupler.In recent years, the performance of grating coupler is continuously improved in the extensive concern of researcher, coupler
Structure also emerge one after another, from common grating coupler, developed the grating coupler with substrate reflecting mirror, band DBR reflect
The grating coupler of mirror, the grating coupler with coating, glittering type grating coupler, focusing grating coupler, two-dimentional light
Grid coupler etc..
End coupling is easier to realize high coupling efficiency than plane coupling, and the packaging technology of device is also relatively easy, application
Also more extensively.The spot-size converter of end coupling type mainly has taper spot-size converter, prism coupler, prism coupler, water
Flat Double-Fiber-Bragg-Gratings Coupler etc..In integrated photon waveguide device, usually using tapered transmission line structure as spot-size converter come real
The connection of existing waveguide device and optical fiber.Taper spot-size converter can overcome single mode optical fiber and waveguide in effective refractive index, core diameter
The excessive problem of size etc. difference improves the mould field matching degree of optical fiber and waveguide, converts light for the mode in optical fiber
Mode in waveguide, to realize efficient coupling.The structure of taper spot-size converter is generally divided into positive taper and reversed cone
Two kinds of shape.Positive pyramidal structure is a kind of intuitive structure of comparison, and the one end connecting with optical fiber is extended to optical fiber core diameter size
Size is gradually reduced to form taper to the one end connecting with waveguide, and the mould field in optical fiber is converted in waveguide by pyramidal structure
Mould field.Inverse taper structure is that the one end for connecting waveguide with optical fiber gradually decreases to even tens nanometers and covers covering,
It leaks into the mould field being limited in waveguide originally in covering to expand mould field, realizes the matching with optical fiber mode fields.
Silicon waveguide and optical fiber can be reduced to a certain degree by coupled structure loss, but for optical fiber and SiON waveguide
Coupling loss it is still very big, the present invention is directed to propose a kind of coupled structure of completely new realization optical fiber and SiON waveguide.
Summary of the invention
One of the objects of the present invention is to provide a kind of SiON waveguide and optical coupling structures, to solve to deposit in the prior art
SiON waveguide and fiber coupling big technical problem is lost.
The second object of the present invention is to provide the production method of a kind of SiON waveguide and optical coupling structure.
To achieve the above object, the present invention provides following technical schemes:
A kind of SiON waveguide provided by the invention and optical coupling structure, comprising: SiON waveguide is input waveguide；Dioxy
SiClx waveguide is coated on the outside of the SiON waveguide；Taper SiON waveguide is coated on the inside of the SiO 2 waveguide,
And it is in the lower section of the SiON waveguide horizontal plane, and cross sectional dimensions is less than the cross sectional dimensions of the SiON waveguide, it is transversal
Face size along optical transport direction flaring；SiON output waveguide is connect with the taper SiON waveguide.
Preferably, the SiON waveguide is located at the symmetry axis position of the SiO 2 waveguide.
Preferably, taper SiON waveguide is located at the symmetry axis position of the SiO 2 waveguide.
Preferably, the cross section of the SiO 2 waveguide is rectangle structure, by buried oxide layer and silica overlayer
It collectively constitutes, wherein the thickness of buried oxide layer and the thickness of silica overlayer are equal.
It preferably, further include substrate, the substrate is the partial silicon substrate of SOI Substrate, and the quilting material of the SOI Substrate is
The silicon of submicron thickness, the material of buried oxide layer are silica, and the material at backing bottom is pure silicon materials.
In order to realize above-mentioned second purpose, the present invention provides the production sides of a kind of SiON waveguide and optical coupling structure
Method,
The production method of SiON waveguide and optical coupling structure provided by the invention, comprising the following steps:
S1: pass through RCA technique, handle clean SOI wafer；
S3: use Raith150 electron beam exposure apparatus, and pass through developing fixing, produce pyramidal structure, waveguiding structure and
The mask pattern of the common alignment mark to be used of photoetching alignment；
S4: utilizing ICP lithographic technique, mask pattern be transferred in SOI wafer, under shallow2LR3 etching condition, carves
Lose 10s~60s；
S6: one layer of SiON coating is covered with PECVD；
S7: photoresist is spin-coated in the SOI wafer of SiON coating；
S8: utilizing ultraviolet photolithographic, and set carves the mask structure of SiON waveguide；
S9:ICP etches SiON waveguiding structure；
S11: with PECVD in the SOI wafer for having made SiON waveguiding structure, then one layer of SiO2 protective layer is covered.
Preferably, in which: further include step S2 between step S1 and step S3, the step S2 is to revolve PMMA photoresist
It is coated in SOI wafer.
Preferably, in which: further include step S5 between step S4 and step S6, the step S5 is to be beaten using plasma
Glue machine removes residue glue, the clean SOI wafer of RCA cleaning treatment.
Preferably, in which: further include step S10 between step S9 and step S11, the step S10 is to utilize plasma
Body adhesive supplier removes residue glue, the clean SOI wafer of RCA cleaning treatment.
Preferably, in which: further include step S12 after step S11, the step S12 is scribing, by reversed conical die spot
The input end face of converter exposes.
The SiON waveguide of offer of the invention and optical coupling structure, have following technical effect that
Tapered transmission line encapsulated by structures is among the waveguide of a low-refraction, and the light field leaked out from tapered transmission line can
It resuming and broadcasts to be limited in the waveguide relaying of low-refraction, the distance between two tips end face of such tapered transmission line can have a certain distance,
And mode spot-size will not change with this distance and be changed.The present invention coats one layer of SiO in SiON waveguide2, make this knot
Structure is separated and is played a protective role with air.SiON waveguide is different from the refractive index of taper SiON waveguide, and SiON waveguide can be with
Optical fiber matching, taper SiON waveguide can accomplish small size again, and large-sized SiON waveguide is sheathed on the taper SiON of small size
The outside of waveguide can make device small by this kind of coupled structure, and reduce energy consumption.
SiO is obtained by the production method of SiON waveguide and optical coupling structure2The SiON waveguide of cladding, eliminates light field
The leakage loss spread to substrate, effectively increases coupled structure to the limitation capability of light field, extends optical mode field size, reduces
Model field unbalance loss when the dispersion loss of back taper coupled structure end and optical fiber are coupled with submicron-scale waveguide and
Reflection loss.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the coupled structure schematic diagram of optical fiber and silicon waveguide；
Fig. 2 is the schematic perspective view of SiON waveguide and optical coupling structure；
Fig. 3 is the side view of SiON waveguide and optical coupling structure.
In figure:
101, optical fiber；102, silicon waveguide；201, SiON waveguide；202, SiO 2 waveguide；203, taper SiON waveguide；
204, SiON output waveguide；205, substrate.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, technical solution of the present invention will be carried out below
Detailed description.Obviously, described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, those of ordinary skill in the art are obtained all without making creative work
Other embodiment belongs to the range that the present invention is protected.
In the description of the present invention, it is to be understood that, term " center ", " length ", " width ", " height ", "upper",
The orientation of instructions such as "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " side " or
Positional relationship is to be merely for convenience of description of the present invention and simplification of the description based on attached orientation or positional relationship shown in FIG. 1, without
It is that the equipment of indication or suggestion meaning or element must have a particular orientation, be constructed and operated in a specific orientation, therefore not
It can be interpreted as limitation of the present invention.In the description of the present invention, unless otherwise indicated, the meaning of " plurality " is two or two
More than.
SOI Substrate refers to silicon nanowires waveguide, generally use on insulator silicon SOI (Silicon on insulator,
SOI) substrate makes, and the refractive index of sandwich layer and covering is very big, and very strong limitation can be formed to light field, to realize super
Small waveguide dimensions and bending radius, and its manufacture craft is mutually compatible with mature CMOS technology technology, is extensive
The research of photoelectricity integrated chip is had laid a good foundation with application.
PECVD refers to that gas ions enhance chemical vapour deposition technique, and application range is most universal, because it is with lower
The advantages that technological temperature, high deposition rate, few pin hole and cavity blemish, high film consistency.Plasma enhancing
Learning gas phase deposition technology is that will supply substrate, gas radio-frequency power supply in reaction chamber containing several gases for constituting film element
The electromagnetic field effect of generation issues biochemical reaction, by thin-film deposition in sample surfaces.
Lithographic technique is the key technology of semiconductor fabrication process, and the purpose is to realizations reported as precisely as possible from exposure mask to quarter
The pattern transfer of corrosion material.Etch the wet etching for being generally divided into liquid and two kinds of gaseous dry etching.Wet etching passes through
Chemical reaction occurs for liquid chemical reagent (such as HF, KOH) and material to remove material, is generally used for the biggish feelings of dimension of picture
Under condition.Dry etching is that the main lithographic method of production submicron component is compared with wet etching, and there are many excellent for dry etching
Point: fine pattern working ability, high anisotropy etch, without waste liquor contamination etc..Inductively gas ions (ICP) etching is present
Using more dry etching technology, it has, and apparatus structure is simple, cost performance is high, good big chambers uniform, easy to operate
The advantages that.Extraordinary etching effect can be obtained to the etching of the multiple materials such as silicon, SiO2, III-V compound and metal
Fruit, therefore, ICP lithographic technique are widely used in the preparation process of the devices such as microelectronics, photoelectron and MEMS.
Fig. 2 is the schematic perspective view of SiON waveguide and optical coupling structure, and Fig. 3 is SiON waveguide and fiber coupling knot
The side view of structure.Wherein, the direction x in figure is the direction of optical transport, and plane where x, y is horizontal plane, plane where y, z
For cross section.
Embodiment 1:
SiON waveguide of the invention and optical coupling structure, as shown in Figures 2 and 3, including SiON waveguide 201, for input
Waveguide；SiO 2 waveguide 202 is coated on the outside of SiON waveguide 201；Taper SiON waveguide 203201, is coated on dioxy
202 inside of SiClx waveguide, and it is in the lower section of 201 horizontal plane of SiON waveguide, and cross sectional dimensions is less than the cross of SiON waveguide 201
Sectional dimension, cross sectional dimensions along optical transport direction flaring；SiON output waveguide 204, with taper SiON waveguide 203201
Connection.
Wherein, SiON waveguide 201 is located at the symmetry axis position of SiO 2 waveguide 202.Taper SiON waveguide
203201 are located at the symmetry axis position of SiO 2 waveguide 202.The cross section of SiO 2 waveguide 202 is rectangle knot
Structure is collectively constituted by buried oxide layer and silica overlayer, wherein the thickness phase of the thickness of buried oxide layer and silica overlayer
Deng.
And further include substrate 205, substrate 205 is the partial silicon substrate 205 of SOI Substrate, the quilting material of the SOI Substrate
For the silicon of submicron thickness, the material of buried oxide layer is silica, and the material at backing bottom 205 is pure silicon materials.
It describes in detail below to the present embodiment SiON waveguide 201 and the various pieces of optical coupling structure.
The cross section of SiO 2 waveguide 202 is symmetrical structure, is preferably both axial symmetry and centrosymmetric structure, this
In embodiment, the cross section of SiO 2 waveguide 202 is rectangle structure, by common group of buried oxide layer and silica overlayer
At, wherein the thickness of buried oxide layer and the thickness of silica overlayer are equal, thus the symmetrical mould of SiO 2 waveguide 202
Field may be implemented preferably to match with the circular mode fields in optical fiber, to reduce mode mismatch loss.Light in optical fiber is from dioxy
The input terminal of SiClx waveguide 202 inputs, as shown in Figure 2.
Referring to shown in Fig. 2, in the present embodiment, SiON waveguide 201 is along the direction of optical transport, and thickness is consistent, in length
Bar shaped is coated on the inside of silica, and along the direction of optical transport, thickness is consistent for taper SiON waveguide 203201,
The structure of taper is presented along the section that horizontal plane is splitted, input terminal is narrow, and output end is wide, i.e., cross sectional dimensions is along optical transport
Direction flaring；The SiON waveguide 201 and taper SiON waveguide 203201 being coated in SiO 2 waveguide 202, wherein SiON wave
Lead 201 tops for being located at taper SiON waveguide 203201, and the refractive index of SiON waveguide 201 and taper SiON waveguide 203201
It is not identical.Enter SiON output waveguide 204 by the compressed light of taper SiON waveguide 203201, then in SiON output waveguide
204 are done step-by-step coupling, to realize the output of light.Light field passes through taper SiON waveguide 203201 and SiON output waveguide 204
Coupling, the various function elements of connection can minimize more.
Substrate 205 is the partial silicon substrate 205 in SOI Substrate, and the top layer silicon of the SOI Substrate is the silicon of submicron thickness,
Buried oxide layer is silica, and backing bottom 205 is pure silicon.
Wherein, the width of 203201 end of taper SiON waveguide will not generally be narrowed due to being limited by craft precision
To zero, the width is smaller, and to improving, coupling efficiency is more advantageous.
Embodiment 2:
The production of reversed taper spot-size converter, it is the SOI that 340nm is thick, BOX layer is 2 μ m-thicks that we, which have used top layer silicon,
Wafer.The entire process flow of production is as follows:
S1: pass through RCA technique, handle clean SOI wafer；
S2: PMMA photoresist is spin-coated in SOI wafer, and revolving speed is 4000 turns/min, with a thickness of 220nm；
S3: use Raith150 electron beam exposure apparatus, and pass through developing fixing, produce pyramidal structure, waveguiding structure and
The mask pattern of the common alignment mark to be used of photoetching alignment；
S4: utilizing ICP lithographic technique, mask pattern be transferred in SOI wafer, under shallow2LR3 etching condition, carves
Lose 50s；
S5: remove residue glue, the clean SOI wafer of RCA cleaning treatment using plasma adhesive supplier；
S6: with PECVD cover one layer of SiON coating, refractive index 1.7,3 μm of thickness；
S7: photoresist being spin-coated in the SOI wafer of SiON coating, and about 2.5 μm of glue thickness；
S8: utilizing ultraviolet photolithographic, and set carves the mask structure of SiON waveguide；
S9:ICP etches SiON waveguiding structure；
S10: remove residue glue, the clean SOI wafer of RCA cleaning treatment using plasma adhesive supplier；
S11: with PECVD in the SOI wafer for having made SiON waveguiding structure, then 2 μm of a thickness is covered, refractive index is
1.47 SiO2 protective layer；
S12: the input end face of reversed taper spot-size converter is exposed in scribing.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
1. a kind of SiON waveguide and optical coupling structure characterized by comprising
SiON waveguide is input waveguide；
SiO 2 waveguide is coated on the outside of the SiON waveguide；
Taper SiON waveguide is coated on the inside of the SiO 2 waveguide, and is in the lower section of the SiON waveguide horizontal plane,
And cross sectional dimensions be less than the SiON waveguide cross sectional dimensions, cross sectional dimensions along optical transport direction flaring；
SiON output waveguide is connect with the taper SiON waveguide.
2. a kind of SiON waveguide according to claim 1 and optical coupling structure, which is characterized in that SiON waveguide position
In the symmetry axis position of the SiO 2 waveguide.
3. a kind of SiON waveguide according to claim 1 and optical coupling structure, which is characterized in that the taper SiON wave
It leads positioned at the symmetry axis position of the SiO 2 waveguide.
4. a kind of SiON waveguide according to claim 1 and optical coupling structure, which is characterized in that the silica wave
The cross section led is rectangle structure, is collectively constituted by buried oxide layer and silica overlayer, wherein the thickness of buried oxide layer and two
The thickness of siliconoxide blanket layer is equal.
5. a kind of SiON waveguide according to claim 1 and optical coupling structure, which is characterized in that it further include substrate, institute
The partial silicon substrate that substrate is SOI Substrate is stated, the quilting material of the SOI Substrate is the silicon of submicron thickness, the material of buried oxide layer
For silica, the material at backing bottom is pure silicon materials.
6. a kind of production method of SiON waveguide and optical coupling structure, comprising the following steps:
S1: pass through RCA technique, handle clean SOI wafer；
S3: using Raith150 electron beam exposure apparatus, and pass through developing fixing, produces pyramidal structure, waveguiding structure and common
The mask pattern of the alignment mark to be used of photoetching alignment；
S4: utilizing ICP lithographic technique, mask pattern be transferred in SOI wafer, under shallow2LR3 etching condition, etching
10s~60s；
S6: one layer of SiON coating is covered with PECVD；
S7: photoresist is spin-coated in the SOI wafer of SiON coating；
S8: utilizing ultraviolet photolithographic, and set carves the mask structure of SiON waveguide；
S9:ICP etches SiON waveguiding structure；
S11: with PECVD in the SOI wafer for having made SiON waveguiding structure, then one layer of SiO is covered2Protective layer.
7. production method according to claim 6, in which: further include step S2, the step between step S1 and step S3
Rapid S2 is that PMMA photoresist is spin-coated in SOI wafer.
8. production method according to claim 6, in which: further include step S5, the step between step S4 and step S6
Rapid S5 is to remove residue glue, the clean SOI wafer of RCA cleaning treatment using plasma adhesive supplier.
9. production method according to claim 6, in which: it further include step S10 between step S9 and step S11, it is described
Step S10 is to remove residue glue, the clean SOI wafer of RCA cleaning treatment using plasma adhesive supplier.
10. production method according to claim 6, in which: it further include step S12 after step S11, the step S12
For scribing, the input end face of reversed taper spot-size converter is exposed.
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|---|---|---|---|---|
| CN110632702A (en) * | 2019-10-23 | 2019-12-31 | 北京工业大学 | LNOI-based optical waveguide reverse wedge-shaped spot coupler and preparation method thereof |
| CN111239899A (en) * | 2020-03-17 | 2020-06-05 | 联合微电子中心有限责任公司 | Method for realizing spot size conversion based on substrate SiON waveguide bonding and spot size converter |
| CN111367016A (en) * | 2020-04-10 | 2020-07-03 | 联合微电子中心有限责任公司 | Spot converter and preparation method thereof |
| CN112341207A (en) * | 2020-11-20 | 2021-02-09 | 哈尔滨工业大学 | Silicon nitride-silicon oxynitride column-hole composite ceramic material and preparation method thereof |
| CN113917613A (en) * | 2021-10-14 | 2022-01-11 | 中国科学院半导体研究所 | Silicon waveguide end face coupling structure and preparation method thereof |
| CN117452557A (en) * | 2023-12-22 | 2024-01-26 | 无锡芯光互连技术研究院有限公司 | 3D silicon-based optical end face coupler and preparation method thereof |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57132105A (en) * | 1981-02-09 | 1982-08-16 | Nec Corp | Buried type optical waveguide path |
| US5078516A (en) * | 1990-11-06 | 1992-01-07 | Bell Communications Research, Inc. | Tapered rib waveguides |
| CN1246928A (en) * | 1997-02-07 | 2000-03-08 | 布克哈姆技术有限公司 | Tapered rib waveguide |
| US6317445B1 (en) * | 2000-04-11 | 2001-11-13 | The Board Of Trustees Of The University Of Illinois | Flared and tapered rib waveguide semiconductor laser and method for making same |
| CN1495447A (en) * | 2002-09-20 | 2004-05-12 | 日本电信电话株式会社 | Optical module and its manufacturing method |
| CN1839331A (en) * | 2003-08-04 | 2006-09-27 | 皮雷利&C.有限公司 | Integrated optical waveguide structure with low coupling losses to an external optical field |
| CN101710195A (en) * | 2009-12-09 | 2010-05-19 | 中国科学院半导体研究所 | Free-etching oxidation manufacturing method of SOI submicron ridge optical waveguide back-taper coupler |
| CN102159975A (en) * | 2008-09-17 | 2011-08-17 | 英特尔公司 | Method and apparatus for efficient coupling between silicon photonic chip and optical fiber |
| CN102253450A (en) * | 2011-06-10 | 2011-11-23 | 中国科学院半导体研究所 | Manufacturing method of integrated optical waveguide Mach-Zehnder interferometric sensor chip |
| CN203241564U (en) * | 2013-05-30 | 2013-10-16 | 青岛海信宽带多媒体技术有限公司 | Optical fiber waveguide spot size converter and optical coupler |
| CN105607186A (en) * | 2016-03-22 | 2016-05-25 | 河南仕佳光子科技股份有限公司 | Waveguide Bragg grating based on SiO2 strip-loaded waveguide and manufacturing method thereof |
| CN107561640A (en) * | 2017-08-18 | 2018-01-09 | 中国科学院半导体研究所 | Silicon nanowires waveguide and optical coupling structure and preparation method thereof |
-
2019
- 2019-01-14 CN CN201910014594.4A patent/CN109445032A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57132105A (en) * | 1981-02-09 | 1982-08-16 | Nec Corp | Buried type optical waveguide path |
| US5078516A (en) * | 1990-11-06 | 1992-01-07 | Bell Communications Research, Inc. | Tapered rib waveguides |
| CN1246928A (en) * | 1997-02-07 | 2000-03-08 | 布克哈姆技术有限公司 | Tapered rib waveguide |
| US6317445B1 (en) * | 2000-04-11 | 2001-11-13 | The Board Of Trustees Of The University Of Illinois | Flared and tapered rib waveguide semiconductor laser and method for making same |
| CN1495447A (en) * | 2002-09-20 | 2004-05-12 | 日本电信电话株式会社 | Optical module and its manufacturing method |
| CN1839331A (en) * | 2003-08-04 | 2006-09-27 | 皮雷利&C.有限公司 | Integrated optical waveguide structure with low coupling losses to an external optical field |
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