CN111665592A - LNOI suspended spot size converter and process implementation method thereof - Google Patents
LNOI suspended spot size converter and process implementation method thereof Download PDFInfo
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- CN111665592A CN111665592A CN202010377320.4A CN202010377320A CN111665592A CN 111665592 A CN111665592 A CN 111665592A CN 202010377320 A CN202010377320 A CN 202010377320A CN 111665592 A CN111665592 A CN 111665592A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
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Abstract
The invention discloses an LNOI suspended spot size converter and a process realization method thereof2Cantilever beam supporting structure and SiO2Suspended optical waveguide, LNOI tapered core layer, transition structure, LNOI optical waveguide core layer, and SiO2A cladding layer and a chip substrate. Wherein the LNOI tapered core layer is embedded in SiO2The core layer of the LNOI optical waveguide is positioned between the transition structure and the SiO2The space enclosed by the cladding; the SiO2Suspended optical waveguide, transition structure and SiO2The cladding layers are connected in sequence, and the embedded LNOI tapered core layer is precisely butted with the LNOI optical waveguide core layer. The invention realizes the simultaneous horizontal and longitudinal conversion of the optical mode size in the LNOI optical waveguide, and can meet the requirements of submicron LNOI optical waveguide and LNOI optical waveguideThe requirement of matching the fiber mode size, the mode converter is suitable for both ridge type LNOI optical waveguide and rectangular LNOI optical waveguide.
Description
Technical Field
The invention relates to the field of integrated photons, and relates to an LNOI suspended spot size converter and a process implementation method thereof.
Background
The thin film Lithium Niobate (LNOI) material is a new integrated photoelectronic chip material, and not only has LiNbO3The bulk material has excellent performance, and has stronger optical confinement capability, higher integration level and higher electro-optic regulation and control efficiency compared with the traditional bulk material after being thinned. In particular, the Si-based LNOI material is more thin-film LiNbO3The photonic technology and the photoelectric monolithic integration of the Si-CMOS circuit provide an excellent platform, and have wide application prospects in the field of photoelectric integration.
For LNOI photonic chips, the insertion loss is one of the key factors to determine whether it meets the requirements of practical applications. Factors affecting LNOI chip insertion loss mainly include LNOI optical path optical transmission loss due to material absorption, waveguide surface scattering and bending radiation and coupling loss due to mode mismatch between the optical fiber and the sub-micron LNOI optical waveguide. Compared with the prior art, the latter is the most important factor influencing the insertion loss of the LNOI photonic chip and is also a key factor limiting the practicability of the LNOI photonic chip. Therefore, a spot size converter must be employed at the port where the LNOI optical waveguide couples to the optical fiber to reduce the mode size mismatch and coupling loss between the two.
At present, in order to reduce the coupling loss of the LNOI photonic chip and the optical fiber, the following two methods are mainly included: (1) coupling a signal in an LNOI optical path into a Si optical waveguide in an evanescent wave coupling mode, and coupling the signal into an optical fiber through a mature low-coupling-loss Si grating structure in the Si optical waveguide; (2) a double-layer conical LN structure is introduced into the end face of the LNOI photonic chip waveguide, and mode size amplification to a certain degree is achieved.
However, the grating coupling scheme in (1) is easily affected by wavelength, polarization and other factors, and is not favorable for device packaging application; the solution (2) has limited ability to enlarge the size of the optical mode, and especially in the longitudinal direction, it is usually necessary to use a tapered lens fiber to reduce the size of the optical mode in the fiber to achieve the low-loss coupling effect between the fiber and the LNOI optical waveguide, and this coupling method has high structural requirements for the coupling fiber and the LNOI optical waveguide mode spot converter. Therefore, there is a need for an efficient, stable, and low-requirement LNOI speckle converter to reduce the insertion loss of LNOI photonic chips and advance the development of LNOI photonic chips.
Disclosure of Invention
In order to solve the problems, the invention provides an LNOI suspended spot size converter and a process implementation method thereof, which realize the simultaneous horizontal and longitudinal conversion of the optical mode size in an LNOI optical waveguide, can meet the requirement of matching the submicron LNOI optical waveguide with the optical fiber mode size, and is suitable for ridge type LNOI optical waveguides and rectangular LNOI optical waveguides.
In order to achieve the purpose, the technical scheme of the invention is that the LNOI suspended mode spot converter comprises an optical fiber fixing groove, an optical coupling end face and SiO2Cantilever beam supporting structure and SiO2Suspended optical waveguide, LNOI tapered core layer, transition structure, LNOI optical waveguide core layer, and SiO2A cladding layer and a chip substrate.
Wherein the LNOI tapered core layer is embedded in SiO2The core layer of the LNOI optical waveguide is positioned between the transition structure and the SiO2The space enclosed by the cladding; the SiO2Suspended optical waveguide, transition structure and SiO2The cladding layers are connected in sequence, and the embedded LNOI tapered core layer is precisely butted with the LNOI optical waveguide core layer;
the SiO2Cantilever beam supporting structure and SiO2The suspended optical waveguide is a suspended structure, and the SiO is2Cantilever beam supporting structure is used for connecting SiO2Suspended optical waveguide and SiO2A cladding layer, the optical coupling end face being located on SiO2The optical fiber fixing groove is positioned at the end face of the optical coupling and deviates from SiO2Suspending one side of the optical waveguide.
The transition structure is used for connecting the LNOI tapered core layer and the LNOI optical waveguideCore layer for simultaneously connecting SiO2Suspended optical waveguide and SiO2Cladding of said SiO2The cladding comprises SiO2Upper cladding and SiO2And a lower cladding layer.
Preferably, the LNOI tapered core layer and the LNOI optical waveguide core layer in the transition structure are rectangular optical waveguide structures.
Preferably, the LNOI optical waveguide core layer is a ridge optical waveguide structure or a rectangular optical waveguide structure; when the optical waveguide structure is a ridge type optical waveguide structure, SiO2An LNOI flat plate layer is embedded in the middle of the cladding; when a rectangular optical waveguide structure is used, SiO2The cladding layer has no LNOI flat plate layer in the middle.
Preferably, the SiO2The cantilever beam supporting structure is respectively connected with the SiO2Side wall of suspended optical waveguide and SiO2Cladding connection to achieve SiO2Mechanical support of the suspended optical waveguide.
Preferably, the SiO2Cantilever beam supporting structure and SiO2The periphery of the suspended optical waveguide is filled with the same curing agent as in the optical fiber fixing groove to achieve refractive index matching.
Preferably, the fiber securing groove is for securing an external optical fiber, and the optical fiber is aligned with the optical coupling end face.
Preferably, the optical fiber is fixed in the fiber fixing groove by a curing agent.
Preferably, the light coupling end face is angled to reduce end face reflection of light.
A process implementation method of an LNOI suspended spot size converter comprises the following steps:
1) etching the LNOI optical waveguide core layer;
preparing a hard mask on the upper surface layer of the LNOI material; under the protection of the hard mask, etching the LNOI optical waveguide core layer by a dry etching process;
2) etching the LNOI conical core layer and the transition structure;
preparing a hard mask on the surface layer of the LNOI optical waveguide core layer; under the protection of the hard mask, the LNOI tapered core layer and the transition structure are etched to SiO by a dry etching process2A lower cladding;
3）SiO2growing an upper cladding layer;
growing SiO on the surface of the etched LNOI chip by adopting PECVD or LPCVD2An upper cladding layer;
4）SiO2cantilever beam supporting structure and SiO2Etching the suspended optical waveguide;
in the grown SiO2Preparing a hard mask on the surface layer of the upper cladding; etching SiO by dry etching process under the protection of hard mask2Cladding to chip substrate to form SiO preliminarily2Cantilever beam supporting structure and SiO2A suspended optical waveguide;
5）SiO2cantilever beam supporting structure and SiO2Hollowing out the lower part of the suspended optical waveguide;
adopting wet or dry over-etching process to etch SiO2Cantilever beam supporting structure and SiO2Partial substrate material below the suspended optical waveguide is hollowed out to make SiO2Cantilever beam supporting structure and SiO2The suspended optical waveguide is suspended;
6) etching an optical fiber fixing groove;
preparing a hard mask, and under the protection of the hard mask, etching partial materials of the chip substrate by adopting a dry process to form an optical fiber fixing groove.
Preferably, the hard mask is a nickel or chromium hard mask prepared by spin-coating photoresist, exposing, developing, metal evaporating and wet stripping processes, or a nickel or chromium-containing alloy hard mask; or the HSQ hard mask is prepared by adopting electron beam glue HSQ and through electron beam exposure and development processes.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention adopts SiO2The suspended mode spot converter structure with the suspended optical waveguide wrapping the tapered LNOI optical waveguide core layer realizes the transverse and longitudinal simultaneous conversion of the optical mode size in the LNOI optical waveguide, and when light is coupled and input from the optical fiber to the LNOI suspended mode spot converter, the light firstly enters SiO with micron scale2The suspended optical waveguide realizes the mode size matching,then embedded in SiO2The LNOI tapered core layer in the middle of the suspended optical waveguide gradually restrains, compresses and couples the optical field from the transverse direction and the longitudinal direction into the transition structure with submicron scale and the LNOI optical waveguide core layer for transmission, thereby realizing the conversion of the optical mode field from large size to small size; on the contrary, when light is coupled and output from the LNOI optical waveguide core layer to the external optical fiber through the LNOI suspended mode spot converter, the light firstly enters the transition structure with submicron scale, then the light field is diverged and expanded through the LNOI tapered core layer, and then SiO with micron scale is carried out2The optical mode field is transmitted under the constraint of the suspended optical waveguide, so that the conversion from small size to large size of the optical mode field is realized, and the requirement of matching with an optical fiber mode is met. The requirement of matching the sizes of the submicron LNOI optical waveguide and the optical fiber mode can be met, and the mode converter is suitable for both ridge type LNOI optical waveguides and rectangular LNOI optical waveguides.
2. The optical fiber fixing groove is arranged at the interface of the optical fiber, so that the mechanical strength of the butt joint of the optical fiber and the LNOI photonic chip can be increased, and the end face reflection of light can be reduced by adopting a certain-angle inclination on the end face of the LNOI.
3. The transition structure is arranged between the LNOI tapered core layer and the LNOI optical waveguide core layer, so that the radiation loss of light transmitted through the transition structure is reduced.
4. SiO in the invention2Cantilever beam supporting structure and SiO2The periphery of the suspended optical waveguide is filled with the same curing agent as that in the optical fiber fixing groove so as to realize refractive index matching and enhance the mechanical property of the structure.
Drawings
FIG. 1 is a schematic diagram of an LNOI suspended spot size converter according to the present invention;
FIG. 2 is a schematic view of the structure at A-A' in FIG. 1;
FIG. 3 is a schematic view of an LNOI ridge waveguide structure;
FIG. 4 is a schematic diagram of an LNOI rectangular waveguide structure;
fig. 5 is a schematic diagram of the main process flow of an LNOI suspended spot-size converter.
In the figure: 1. optical fiber fixing groove, 2, optical coupling end face, 3, SiO2Cantilever beam support structure, 4, SiO2A suspended optical waveguide 5,LNOI tapered core layer, 6 transition structure, 7 LNOI optical waveguide core layer, 7-1 ridge type LNOI optical waveguide core layer, 7-2 rectangular LNOI optical waveguide core layer, 8 SiO2Cladding, 8-1, SiO2Upper cladding, 8-2, SiO2Lower cladding layer, 9, chip substrate, 10, LNOI flat plate layer.
Detailed Description
The following description of the present invention will be made in conjunction with the accompanying drawings.
An LNOI suspended spot size converter, as shown in FIG. 1-2, comprises a fiber fixing groove 1, an optical coupling end face 2, and SiO2Cantilever beam supporting structure 3, SiO2Suspended optical waveguide 4, LNOI tapered core layer 5, transition structure 6, LNOI optical waveguide core layer 7, SiO2Cladding layer 8 and chip substrate 9. The LNOI conical core layer 5 is embedded in SiO2In the middle of the suspended optical waveguide 4, an LNOI optical waveguide core layer 7 is positioned between the transition structure 6 and SiO2In the space enclosed by the cladding 8; SiO 22Suspended optical waveguide 4, transition structure 6 and SiO2The claddings 8 are connected in sequence, and the embedded LNOI tapered core layer 5 is precisely butted with the LNOI optical waveguide core layer 7;
SiO2cantilever beam supporting structure 3 and SiO2The suspended optical waveguide 4 is a suspended structure of SiO2Cantilever beam supporting structure 3 is used for connecting SiO2Suspended optical waveguide 4 and SiO2Cladding 8 to achieve SiO2Mechanical support of the suspended optical waveguide 4. The optical coupling end face 2 is positioned on SiO2The port of the suspended optical waveguide 4 and the optical fiber fixing groove 1 are positioned on the optical coupling end face 2 and deviate from SiO2Suspending one side of the optical waveguide 4. The transition structure 6 is used for connecting the LNOI tapered core layer 5 and the LNOI optical waveguide core layer 7, and is also used for connecting the SiO2Suspended optical waveguide 4 and SiO2Cladding 8, SiO2The cladding 8 comprises SiO2Upper cladding 8-1 and SiO2And a lower cladding layer 8-2.
The optical fiber fixing groove 1 fixes the optical fiber through the curing agent, and the optical fiber is aligned with the optical coupling end face 2, and the optical coupling end face 2 is inclined at a certain angle to reduce the end face reflection of light. SiO 22Cantilever beam supporting structure 3, SiO2The periphery of the suspended optical waveguide 4 is filled with optical fibers and fixedThe same curing agent in tank 1 to achieve index matching.
As shown in FIG. 3, the LNOI optical waveguide core layer 7 is a ridge type optical waveguide structure 7-1, in which case SiO is present2Upper cladding 8-1 and SiO2An LNOI flat plate layer 10 is embedded between the lower cladding layers 8-2.
Example 2:
as shown in fig. 4, the LNOI optical waveguide core layer 7 is a rectangular optical waveguide structure 7-2.
As shown in fig. 5, a process implementation method of an LNOI suspended spot-size converter includes the following steps:
step 1) preparing a hard mask on the upper surface layer of the LNOI material by processes of spin coating of photoresist, exposure, development, metal evaporation and wet stripping; under the protection of the hard mask, etching the LNOI optical waveguide core layer 7 by a dry etching process;
step 2), etching the LNOI conical core layer 5 and the transition structure 6;
preparing a hard mask on the surface layer of the LNOI optical waveguide core layer 7 by processes of spin coating of photoresist, exposure, development, metal evaporation and wet stripping; under the protection of the hard mask, the LNOI tapered core layer 5 and the transition structure 6 are etched to SiO by a dry etching process2A lower cladding layer 8-2;
step 3) growing SiO on the etched LNOI chip surface2An upper cladding layer 8-1;
step 4) on the grown SiO2Preparing a hard mask on the surface layer of the upper cladding layer 8-1 by processes of spin coating photoresist, exposure, development, metal evaporation and wet stripping; etching SiO by dry etching process under the protection of hard mask2Cladding layer 8 to chip substrate 9, SiO is preliminarily formed2Cantilever beam supporting structure 3 and SiO2A suspended optical waveguide 4;
step 5) adopting a dry over-etching process to etch SiO2Cantilever beam supporting structure 3 and SiO2The partial substrate material under the suspended optical waveguide 4 is hollowed out to make SiO2Cantilever beam supporting structure 3 and SiO2The suspended optical waveguide 4 is suspended;
and 6) preparing a hard mask for etching the optical fiber fixing groove 1, and etching partial materials of the chip substrate 9 by adopting a dry process under the protection of the hard mask to form the optical fiber fixing groove 1.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. An LNOI suspended spot size converter is characterized in that;
comprises an optical fiber fixing groove, an optical coupling end face and SiO2Cantilever beam supporting structure and SiO2Suspended optical waveguide, LNOI tapered core layer, transition structure, LNOI optical waveguide core layer, and SiO2A cladding layer and a chip substrate;
wherein the LNOI tapered core layer is embedded in SiO2The core layer of the LNOI optical waveguide is positioned between the transition structure and the SiO2The space enclosed by the cladding; the SiO2Suspended optical waveguide, transition structure and SiO2The cladding layers are connected in sequence, and the embedded LNOI tapered core layer is precisely butted with the LNOI optical waveguide core layer;
the SiO2Cantilever beam supporting structure and SiO2The suspended optical waveguide is a suspended structure, and the SiO is2Cantilever beam supporting structure is used for connecting SiO2Suspended optical waveguide and SiO2A cladding layer, the optical coupling end face being located on SiO2The optical fiber fixing groove is positioned at the end face of the optical coupling and deviates from SiO2One side of the suspended optical waveguide;
the transition structure is used for connecting the LNOI tapered core layer and the LNOI optical waveguide core layer and is also used for connecting the SiO2Suspended optical waveguide and SiO2Cladding of said SiO2The cladding comprises SiO2Upper cladding and SiO2And a lower cladding layer.
2. The LNOI suspended spot-size converter of claim 1, wherein: the LNOI tapered core layer and the LNOI optical waveguide core layer in the transition structure are rectangular optical waveguide structures.
3. The LNOI suspended spot-size converter of claim 1, wherein: the LNOI optical waveguide core layer is of a ridge type optical waveguide structure or a rectangular optical waveguide structure; when the optical waveguide structure is a ridge type optical waveguide structure, SiO2An LNOI flat plate layer is embedded in the middle of the cladding; when a rectangular optical waveguide structure is used, SiO2The cladding layer has no LNOI flat plate layer in the middle.
4. The LNOI suspended spot-size converter of claim 1, wherein: the SiO2The cantilever beam supporting structure is respectively connected with the SiO2Side wall of suspended optical waveguide and SiO2Cladding connection to achieve SiO2Mechanical support of the suspended optical waveguide.
5. The LNOI suspended spot-size converter of claim 1, wherein: the SiO2Cantilever beam supporting structure and SiO2The periphery of the suspended optical waveguide is filled with the same curing agent as in the optical fiber fixing groove to achieve refractive index matching.
6. The LNOI suspended spot-size converter of claim 1, wherein: the optical fiber fixing groove is used for fixing an external optical fiber, and the optical fiber is aligned to the optical coupling end face.
7. The LNOI suspended spot-size converter of claim 6, wherein: the optical fiber is fixed in the optical fiber fixing groove by the curing agent.
8. The LNOI suspended spot-size converter of claim 1, wherein: the light coupling end face is angled to reduce end face reflection of light.
9. A process implementation method of the LNOI suspended spot-size converter according to claims 1-8, characterized by comprising the following steps:
1) etching the LNOI optical waveguide core layer;
preparing a hard mask on the upper surface layer of the LNOI material; under the protection of the hard mask, etching the LNOI optical waveguide core layer by a dry etching process;
2) etching the LNOI conical core layer and the transition structure;
preparing a hard mask on the surface layer of the LNOI optical waveguide core layer; under the protection of the hard mask, the LNOI tapered core layer and the transition structure are etched to SiO by a dry etching process2A lower cladding;
3）SiO2growing an upper cladding layer;
growing SiO on the surface of the etched LNOI chip by adopting PECVD or LPCVD2An upper cladding layer;
4）SiO2cantilever beam supporting structure and SiO2Etching the suspended optical waveguide;
in the grown SiO2Preparing a hard mask on the surface layer of the upper cladding; etching SiO by dry etching process under the protection of hard mask2Cladding to chip substrate to form SiO preliminarily2Cantilever beam supporting structure and SiO2A suspended optical waveguide;
5）SiO2cantilever beam supporting structure and SiO2Hollowing out the lower part of the suspended optical waveguide;
adopting wet or dry over-etching process to etch SiO2Cantilever beam supporting structure and SiO2Partial substrate material below the suspended optical waveguide is hollowed out to make SiO2Cantilever beam supporting structure and SiO2The suspended optical waveguide is suspended;
6) etching an optical fiber fixing groove;
preparing a hard mask, and under the protection of the hard mask, etching partial materials of the chip substrate by adopting a dry process to form an optical fiber fixing groove.
10. The method for implementing the LNOI suspended spot-size converter process of claim 9, wherein: the hard mask is a nickel or chromium hard mask prepared by processes of spin-coating photoresist, exposure, development, metal evaporation and wet stripping, or a nickel or chromium-containing alloy hard mask; or the HSQ hard mask is prepared by adopting electron beam glue HSQ and through electron beam exposure and development processes.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112162349A (en) * | 2020-09-29 | 2021-01-01 | 中国科学院物理研究所 | Suspended ridge waveguide structure and preparation method thereof |
| CN112180504A (en) * | 2020-09-29 | 2021-01-05 | 中国科学院物理研究所 | Suspended waveguide structure and preparation method thereof |
| CN112782805A (en) * | 2020-12-30 | 2021-05-11 | 中国电子科技集团公司第五十五研究所 | LNOI (Low noise optical insulator) spot size converter based on sub-wavelength grating and preparation method |
| CN112904481A (en) * | 2021-01-20 | 2021-06-04 | 苏州极刻光核科技有限公司 | End-face coupler and semiconductor device |
| CN114706163A (en) * | 2022-03-28 | 2022-07-05 | 深圳技术大学 | Suspended ridge optical waveguide device and 3D printing preparation method thereof |
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120076465A1 (en) * | 2010-09-27 | 2012-03-29 | Alcatel-Lucent, Usa Inc. | Low loss broadband fiber coupler to optical waveguide |
| CN202904062U (en) * | 2012-08-20 | 2013-04-24 | 东南大学 | Direct coupling device of integrated photonic chip after cutting |
| JP5697778B1 (en) * | 2014-04-03 | 2015-04-08 | 株式会社フジクラ | Substrate type optical waveguide device |
| JP2015215477A (en) * | 2014-05-12 | 2015-12-03 | 日本電信電話株式会社 | Spot size converter |
| US20160041340A1 (en) * | 2014-08-05 | 2016-02-11 | Sifotonics Technologies Co., Ltd. | Optical Coupler Having Anchored Cantilever Structure With Multi-Stage Inverse Taper Core Waveguide And Fabrication Method Thereof |
| CN107342446A (en) * | 2017-06-01 | 2017-11-10 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Terahertz substrate integration wave-guide microstrip transition structure |
| CN108535807A (en) * | 2018-05-25 | 2018-09-14 | 中国科学院半导体研究所 | With the optical fiber-silicon optical chip coupler and preparation method for tilting Waveguide end face |
| CN108885307A (en) * | 2016-12-22 | 2018-11-23 | 华为技术有限公司 | The optical edge coupler with controllable mould field for photon chip |
| CN209342970U (en) * | 2018-11-15 | 2019-09-03 | 杭州芯耘光电科技有限公司 | A kind of coupling device of silicon based opto-electronics chip and single mode optical fiber |
| CN110716262A (en) * | 2019-11-19 | 2020-01-21 | 杭州芯耘光电科技有限公司 | Silicon optical mode spot mode converter and manufacturing method thereof |
| CN111025487A (en) * | 2019-12-26 | 2020-04-17 | 北京航空航天大学 | Direct coupling method and device for hollow photonic band gap optical fiber ring and integrated optical chip with environment wide adaptability |
-
2020
- 2020-05-07 CN CN202010377320.4A patent/CN111665592B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120076465A1 (en) * | 2010-09-27 | 2012-03-29 | Alcatel-Lucent, Usa Inc. | Low loss broadband fiber coupler to optical waveguide |
| CN202904062U (en) * | 2012-08-20 | 2013-04-24 | 东南大学 | Direct coupling device of integrated photonic chip after cutting |
| JP5697778B1 (en) * | 2014-04-03 | 2015-04-08 | 株式会社フジクラ | Substrate type optical waveguide device |
| JP2015215477A (en) * | 2014-05-12 | 2015-12-03 | 日本電信電話株式会社 | Spot size converter |
| US20160041340A1 (en) * | 2014-08-05 | 2016-02-11 | Sifotonics Technologies Co., Ltd. | Optical Coupler Having Anchored Cantilever Structure With Multi-Stage Inverse Taper Core Waveguide And Fabrication Method Thereof |
| CN108885307A (en) * | 2016-12-22 | 2018-11-23 | 华为技术有限公司 | The optical edge coupler with controllable mould field for photon chip |
| CN107342446A (en) * | 2017-06-01 | 2017-11-10 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Terahertz substrate integration wave-guide microstrip transition structure |
| CN108535807A (en) * | 2018-05-25 | 2018-09-14 | 中国科学院半导体研究所 | With the optical fiber-silicon optical chip coupler and preparation method for tilting Waveguide end face |
| CN209342970U (en) * | 2018-11-15 | 2019-09-03 | 杭州芯耘光电科技有限公司 | A kind of coupling device of silicon based opto-electronics chip and single mode optical fiber |
| CN110716262A (en) * | 2019-11-19 | 2020-01-21 | 杭州芯耘光电科技有限公司 | Silicon optical mode spot mode converter and manufacturing method thereof |
| CN111025487A (en) * | 2019-12-26 | 2020-04-17 | 北京航空航天大学 | Direct coupling method and device for hollow photonic band gap optical fiber ring and integrated optical chip with environment wide adaptability |
Non-Patent Citations (1)
| Title |
|---|
| HUAXIANG YI 等: ""Nanotaper mode converter based on silicon pillar waveguide"", 《CHINESE OPTICS LETTERS》, vol. 7, no. 4, pages 312 - 314 * |
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| WO2024001428A1 (en) * | 2022-06-30 | 2024-01-04 | 华进半导体封装先导技术研发中心有限公司 | Silicon optical device and preparation method therefor |
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