CN103022896A - Miniature composite structure laser - Google Patents
Miniature composite structure laser Download PDFInfo
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- CN103022896A CN103022896A CN2012105485404A CN201210548540A CN103022896A CN 103022896 A CN103022896 A CN 103022896A CN 2012105485404 A CN2012105485404 A CN 2012105485404A CN 201210548540 A CN201210548540 A CN 201210548540A CN 103022896 A CN103022896 A CN 103022896A
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- composite construction
- silica
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- miniature composite
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Abstract
The invention discloses a miniature composite structure laser which comprises a silicon oxide micro-disk and semiconductor nanowires. An inclined surface is arranged on the side surface of the silicon oxide micro-disk, and the semiconductor nanowires are arranged on the inclined surface. The miniature composite structure laser has the advantages of being miniature, simple in production, stable, high in quality factor, low in threshold and the like.
Description
Technical field
The invention belongs to the micro optical element field, relate to a kind of miniature composite construction laser.
Background technology
Laser is a kind of important opto-electronic device, all has important application at numerous areas such as industry, military affairs, communication, medical science, scientific researches.The in recent years development of micro-nano photonic propulsion is with a wide range of applications microminiaturized laser.Along with preparation technology's improvement, semiconductor nanowires has been produced out and has been proved to be a kind of very outstanding optoelectronics material, has the advantages such as monocrystalline, defective is few, gain coefficient is high, material ranges is wide.But semiconductor nanowires itself is low owing to reflectivity as the words that the F-P resonant cavity uses, and diffraction loss causes greatly the quality factor of resonant cavity not high.A kind of based semiconductor nano wire realizes that the trial of microlaser is to utilize semiconductor nanowires and other resonant cavitys to be combined into composite construction.The miniature composite construction laser of having realized in the world at present mainly comprises: semiconductor nanowires and horse race field pattern integrated waveguide, semiconductor nanowires and photonic crystal resonant cavity form composite construction etc., but these structural quality factors are general and processing technology is complicated, are unfavorable for that also optics is integrated.
Therefore, need a kind of new miniature composite construction laser to address the above problem.
Summary of the invention
Goal of the invention: the present invention is directed to the defective of the miniature composite construction laser of prior art, the miniature composite construction laser of a kind of simple, stable, high-quality-factor, low threshold value is provided.
Technical scheme: for solving the problems of the technologies described above, miniature composite construction laser of the present invention adopts following technical scheme:
A kind of miniature composite construction laser comprises the little dish of silica and semiconductor nanowires, and the side of the little dish of described silica is provided with the inclined-plane, and described semiconductor nanowires is arranged on the described inclined-plane.
Preferably, the little dish of described silica is disc.
Preferably, described semiconductor nanowires is cadmium selenide nano thread.
Preferably, the little dish diameter of described silica is 20 ~ 100 μ m.
Preferably, the little disc thickness of described silica is 0.2 ~ 2 μ m.
Preferably, described semiconductor nano line length is 5 ~ 20 μ m.
Preferably, described semiconductor nano linear diameter is 200 ~ 500nm.
Beneficial effect: the novel miniature composite construction laser of the present invention has the characteristics such as miniaturization, preparation are simple, stable, high-quality-factor, low threshold value.
Description of drawings
Fig. 1 is the stereogram of miniature composite construction laser of the present invention;
Fig. 2 is the vertical view of miniature composite construction laser of the present invention;
Fig. 3 be miniature composite construction laser of the present invention be 385 μ J/cm in pumping light power density
2The time output spectrum;
Fig. 4 be miniature composite construction laser of the present invention be 125 μ J/cm in pumping light power density
2The time output spectrum;
Fig. 5 be miniature composite construction laser of the present invention be 110 μ J/cm in pumping light power density
2The time output spectrum;
Fig. 6 be miniature composite construction laser of the present invention be 85 μ J/cm in pumping light power density
2The time output spectrum;
Fig. 7 is the typical threshold figure of miniature composite construction laser of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment only is used for explanation the present invention and is not used in and limits the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.
See also illustrated in figures 1 and 2, miniature composite construction laser of the present invention is grown to have on the silicon chip of silicon oxide film with being combined in of mask, dry etching and wet etching means and is prepared little dish 1 resonant cavity of silica, wherein, the side of the little dish 1 of silica is provided with inclined-plane 11.The semiconductor nanowires 2 of growing with the meteorological precipitation method of physical/chemical or other modes is positioned over little dish 1 side wall inclined plane of silica as gain media by the tapered fiber point in the mode of microscopically microoperation.Be coupled by evanscent field between the gain media resonant cavity.Wherein, the little dish 1 of silica is disc, and the diameter of the little dish 1 of silica is 20 ~ 100 μ m, and little dish 1 thickness of silica is 0.2 ~ 2 μ m.Cadmium selenide semiconductor nano line length is 5 ~ 20 μ m.Cadmium selenide semiconductor nano linear diameter is 200 ~ 500nm.The little dish 1 of silica is the little dish of Echo Wall type.
The preparation process of miniature composite construction laser of the present invention is as follows:
(1), have on the silicon chip of silicon oxide film and prepare the little dish 1 of Echo Wall type silica with the growth that is combined in of mask, dry etching and wet etching means, the little dish 1 of silica is resonant cavity, and wherein, the side of the little dish 1 of silica is provided with inclined-plane 11.Can obtain little dish 1 resonant cavity of silica of different-diameter and thickness by the selection of mask process control and silicon oxide film different-thickness.Little dish 1 diameter of silica is 20 ~ 100 μ m, and little dish 1 thickness of silica is 0.2 ~ 2 μ m.Wherein, the little dish 1 of silica is supported by the silicon post 3 that corrosion forms;
(2), semiconductor nanowires 2 is to utilize the physical vapor precipitation method to grow in tube type high-temperature furnace, resulting nanowire length is 5 ~ 20 μ m, diameter is 200 ~ 500nm, and wherein, the material of semiconductor nanowires 2 is cadmium selenide (CdSe) semiconductor nanowires;
(3), utilize optical fiber to draw the probe made of cone with realizing that the suitable semiconductor nanowires 2 of size of choosing provokes and be positioned on the inclined-plane 11 of little dish 1 sidewall of silica at microscopically, namely finish the assembling of composite construction microlaser.
(4), use high power objective with pumping laser (wavelength 532nm, pulse duration 10ns, repetition rate 2KHz) be radiated on the semiconductor nanowires 2 after converging, its stimulated luminescence is coupled to some in little dish chamber and resonance amplifies, and this process finally forms laser.
See also Fig. 3, Fig. 4, Fig. 5 and shown in Figure 6, Fig. 3, Fig. 4, Fig. 5 and Fig. 6 are the exemplary spectrum of miniature composite construction laser of the present invention.Each figure upper left corner numeral is pumping light power density.Can see (85 μ J/cm when pump energy is low
2), output spectrum is that wider gain spectra is wider approximately about 70 nanometers.Increase gradually so that when surpassing laser threshold, can obtain Laser output (the 110 μ J/cm of single mode when pumping light power
2), peak value centre wavelength is about 712 nanometers (but this value has very little change according to different sample individualities).(125 μ J/cm after pumping light power continues to increase
2With 385 μ J/cm
2), can obtain the Laser output of multimode.Its Free Spectral Range (FSR) meets very well with the theoretical prediction value of Echo Wall resonant cavity.Its laser line live width is minimum can to reach 0.08 nanometer.
See also shown in Figure 7ly, Fig. 7 is the typical threshold figure of miniature composite construction laser of the present invention.When pumping light power surpasses 100 μ J/cm
2The time, output light intensity has ferocious growth, means that the threshold value of laser is 100 μ J/cm
2, this is a very low value, this just because of high-quality-factor the little dish resonant cavity of silica and the advantage brought of the semiconductor nanowires of high-gain.
The novel miniature composite construction laser of the present invention has the characteristics such as miniaturization, preparation are simple, stable, high-quality-factor, low threshold value.
Claims (7)
1. miniature composite construction laser, it is characterized in that, comprise the little dish of silica (1) and semiconductor nanowires (2), the side of the little dish of described silica (1) is provided with inclined-plane (11), and described semiconductor nanowires (2) is arranged on the described inclined-plane (11).
2. miniature composite construction laser as claimed in claim 1 is characterized in that, described semiconductor nanowires (2) is cadmium selenide nano thread.
3. miniature composite construction laser as claimed in claim 1 is characterized in that, the little dish of described silica (1) diameter is 20 ~ 100 μ m.
4. miniature composite construction laser as claimed in claim 1 is characterized in that, the little dish of described silica (1) thickness is 0.2 ~ 2 μ m.
5. miniature composite construction laser as claimed in claim 1 is characterized in that, described semiconductor nanowires (2) length is 5 ~ 20 μ m.
6. miniature composite construction laser as claimed in claim 1 is characterized in that, described semiconductor nanowires (2) diameter is 200 ~ 500nm.
7. miniature composite construction laser as claimed in claim 1 is characterized in that, the little dish of described silica (1) is disc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2012105485404A CN103022896A (en) | 2012-12-17 | 2012-12-17 | Miniature composite structure laser |
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|---|---|---|---|
| CN2012105485404A CN103022896A (en) | 2012-12-17 | 2012-12-17 | Miniature composite structure laser |
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| CN103022896A true CN103022896A (en) | 2013-04-03 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103708405A (en) * | 2013-11-08 | 2014-04-09 | 南京大学 | On-chip large-dig-angle silicon oxide micro-disc resonant cavity and manufacturing method for same |
| CN104868359A (en) * | 2015-06-08 | 2015-08-26 | 中国科学院半导体研究所 | Single-mode high-speed modulation Fabry-Perot semiconductor laser based on coupled cavity |
| CN105731352A (en) * | 2016-03-01 | 2016-07-06 | 南京大学 | On-chip integrated arsenic sulfide microdisk cavity and method for manufacturing same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5825799A (en) * | 1995-05-25 | 1998-10-20 | Northwestern University | Microcavity semiconductor laser |
| CN101714742A (en) * | 2009-11-19 | 2010-05-26 | 浙江大学 | Multi-wavelength semiconductor nanowire and micro-optical fiber composite structure micro laser |
| CN101986175A (en) * | 2010-10-29 | 2011-03-16 | 浙江大学 | surface plasma excitation method for chip-integrated metal nanowire |
-
2012
- 2012-12-17 CN CN2012105485404A patent/CN103022896A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5825799A (en) * | 1995-05-25 | 1998-10-20 | Northwestern University | Microcavity semiconductor laser |
| CN101714742A (en) * | 2009-11-19 | 2010-05-26 | 浙江大学 | Multi-wavelength semiconductor nanowire and micro-optical fiber composite structure micro laser |
| CN101986175A (en) * | 2010-10-29 | 2011-03-16 | 浙江大学 | surface plasma excitation method for chip-integrated metal nanowire |
Non-Patent Citations (2)
| Title |
|---|
| GUANZHONG WAND ET AL.: "Hybrid structure microlaser based on a nanowire and a silica microdisk cavity", 《2012 17TH OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE》, 30 October 2012 (2012-10-30), pages 228 - 229 * |
| T. J. KIPPENBERG ET AL: "T. J. Kippenberg, Demonstration of an erbium-doped microdisk laser on a silicon chip", 《PHYSICAL REVIEW A》, 31 December 2006 (2006-12-31) * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103708405A (en) * | 2013-11-08 | 2014-04-09 | 南京大学 | On-chip large-dig-angle silicon oxide micro-disc resonant cavity and manufacturing method for same |
| CN104868359A (en) * | 2015-06-08 | 2015-08-26 | 中国科学院半导体研究所 | Single-mode high-speed modulation Fabry-Perot semiconductor laser based on coupled cavity |
| CN105731352A (en) * | 2016-03-01 | 2016-07-06 | 南京大学 | On-chip integrated arsenic sulfide microdisk cavity and method for manufacturing same |
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Application publication date: 20130403 |