CN105811240A - Silicon-based GaN-nanowire-coated random laser emission apparatus - Google Patents
Silicon-based GaN-nanowire-coated random laser emission apparatus Download PDFInfo
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- CN105811240A CN105811240A CN201610311836.2A CN201610311836A CN105811240A CN 105811240 A CN105811240 A CN 105811240A CN 201610311836 A CN201610311836 A CN 201610311836A CN 105811240 A CN105811240 A CN 105811240A
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- nano wire
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- base layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3027—IV compounds
- H01S5/3031—Si
Abstract
The invention discloses a silicon-based GaN-nanowire-coated random laser emission apparatus. The apparatus is characterized by comprising a bottom layer silicon base layer, a dielectric layer and a metal layer which are stacked in sequence, wherein the silicon base layer is a silicon base layer for coating the GaN nanowire; the dielectric layer is an MgF<2> dielectric layer; and the metal layer is made from Au. The apparatus has high localization characteristics, low gain threshold value and integratable order of magnitude of sub-wavelengths, so that the apparatus has wide potential in the application in the fields of biological monitoring and optical communications.
Description
Technical field
The present invention relates to technical field of photo communication, specifically the device of a kind of silica-based parcel GaN nano wire outgoing Random Laser.
Background technology
Accidental laser is a kind of unconventional laser instrument, and its feedback mechanism is based on random scatter, and this point and conventional laser are diverse by the feedback mechanism that reflecting mirror reflects.The feedback mechanism of this uniqueness lacks the laser instrument of effective reflecting element for those in work spectrum district, manufacture such as UV laser instrument, x-ray laser is highly useful, it it is exactly typically the sequence ZnO powder laser phenomenon of the strong coherent feedback of the H.Cao seminar proposition of Northwestern Univ USA, this seminar takes the lead in observed the coupling between Random Laser pattern, and thereby is achieved the interphase interaction of stochastic system eigen mode.The substrate compatibility of the manufacturing cost that accidental laser is cheap, special operation wavelength, small size, flexibly shape and close friend makes them likely obtain application in many aspects.Such as machine vision, searching and rescue field, be coated in the laser instrument on stranded ship, aircraft and satellite external surface can provide reliably for people, the discrimination method of low cost.Medically, accidental laser has potential application in photodynamic therapy and tumor examination.
" nature material " published " Solution-grownnanowiresmakethebestlasers " literary composition in 2015, the XiaoyangZhu cooperation team of Columbia University reports the laser instrument of Wavelength tunable under a kind of room temperature prepared by monocrystalline lead halogen perovskite nano wire, and this laser instrument has very low laser threshold and high quality coefficient.While it is true, the development bottleneck of current accidental laser is still that its high threshold, low integration problem.
By retrieving and looking into new discovery, at present ZnO particle resonator cavity field is mostly concentrated on for accidental laser research.
Summary of the invention
It is an object of the invention to for the deficiencies in the prior art, and the device of a kind of silica-based parcel GaN nano wire outgoing Random Laser is provided.This device localization characteristic is strong, gain threshold is low, sub-wavelength magnitude can be integrated, has extensive potential application for biological monitoring, optical communication field.
The technical scheme realizing the object of the invention is:
The device of a kind of silica-based parcel GaN nano wire outgoing Random Laser, including underlying silicon substrate layer, dielectric layer and metal level that order is spliced；
Described silicon base layer is the silicon base layer of parcel GaN nano wire, and silica-based silicon is silicon dioxide.
Described dielectric layer is MgF2Dielectric layer, MgF2Dielectric layer is possible to prevent the burning of manufacturing process, and can focus light near nano wire.
Described metal level material is Au, make use of that Au loss is less, manufacturing technology is ripe, lower-cost feature.
Incident illumination incides MgF from Au metal level upper surface with vertical angle2Dielectric layer, so that electric field concentrates between the GaN nano wire on Au metal level and silicon base layer.
Described lambda1-wavelength is 380nm, and pump wavelength is the blue light of 440nm.
In silicon base layer side, angle incidence to produce resonance more than surface plasma makes electronics that metal surface produces and photon resonance formation surface etc. from resonance to pump light, owing to the gain of the GaN nano wire on silicon base layer and the enhancing of surface plasma can improve population inversion level, and then the GaN nano wire two ends on silicon base layer form shoot laser.
The device manufacturing process of above-mentioned silica-based parcel GaN nano wire outgoing Random Laser is as follows:
1) first pass through flame hydrolysis and make silicon dioxide silicon base layer, bottom silicon base layer, form the cylinder consistent with the GaN nano wire diameter after growth by laser beam；
2) GaN nano wire is embedded into silicon base layer, respectively successively by MgF2Dielectric layer, layer gold deposit to the upper surface of GaN nano wire.
Described GaN nano wire growth adopts MOCVD technology, and GaN nano wire can provide the band gap of relative broad range as gain material, has the optical property being combined preferably with plasma.
This device is by the potentiation of interparticle random scatter feedback mechanism, nano wire and surface plasma resonance, achieve the random outgoing of light laser of nano wire end face, this device manufactures useful not only for the laser instrument lacking effective reflecting element, and can provide efficient light sources for small photon circuit, optoelectronic intagration field.
This device localization characteristic is strong, gain threshold is low, sub-wavelength magnitude can be integrated, has extensive potential application for biological monitoring, optical communication field.
Accompanying drawing explanation
Fig. 1 is the structural representation of embodiment.
In figure, 1. silicon base layer 2.GaN nano wire 3.MgF2Dielectric layer 4.Au metal level 5. incident illumination 6. pump light 7. shoot laser.
Detailed description of the invention
Below in conjunction with drawings and Examples, present invention is further elaborated, but is not that the present invention is limited.
Embodiment:
With reference to Fig. 1, the device of a kind of silica-based parcel GaN nano wire outgoing Random Laser, including underlying silicon substrate layer 1, dielectric layer 3 and metal level 4 that order is spliced.
The length and width of the whole device of the present embodiment are 600nm, 500nm, and underlying silicon substrate layer 1 thickness is 200nm, GaN nano wire 2 diameter is 80nm, MgF2Dielectric layer 3 thickness is 50nm, Au metal level 4 thickness is 140nm.
Described silicon base layer 1 is the silicon base layer of parcel GaN nano wire 2, and silica-based silicon is silicon dioxide.
Described dielectric layer 3 is MgF2Dielectric layer, MgF2Dielectric layer is possible to prevent the burning of manufacturing process, and can focus light near nano wire.
Described metal level 4 material is Au, make use of that Au loss is less, manufacturing technology is ripe, lower-cost feature.
Incident illumination 5 incides MgF from Au metal level 4 upper surface with vertical angle2Dielectric layer 3, so that electric field concentrates between the GaN nano wire 2 on Au metal level 4 and silicon base layer 1.
Described incident illumination 5 wavelength is 380nm, and pump light 6 wavelength is the blue light of 440nm.
In silicon base layer 1 side, angle incidence to produce resonance more than surface plasma makes electronics that metal surface produces and photon resonance formation surface etc. from resonance to pump light 6, owing to the gain of the GaN nano wire 2 on silicon base layer 1 and the enhancing of surface plasma can improve population inversion level, and then GaN nano wire 2 two ends on silicon base layer 1 form shoot laser 7.
The device manufacturing process of above-mentioned silica-based parcel GaN nano wire outgoing Random Laser is as follows:
1) first pass through flame hydrolysis and make silicon dioxide silicon base layer 1, bottom silicon base layer 1, form the cylinder consistent with GaN nano wire 2 diameter after growth by laser beam；
2) GaN nano wire 2 is embedded into silicon base layer 1, respectively successively by MgF2Dielectric layer 3, layer gold 4 deposit to the upper surface of GaN nano wire 2.
Described GaN nano wire 2 growth adopts MOCVD technology, and GaN nano wire 2 can provide the band gap of relative broad range as gain material, has the optical property being combined preferably with plasma.
Claims (3)
1. a device for silica-based parcel GaN nano wire outgoing Random Laser, is characterized in that, including underlying silicon substrate layer, dielectric layer and metal level that order is spliced；
Described silicon base layer is the silicon base layer of parcel GaN nano wire.
2. the device of silica-based parcel GaN nano wire outgoing Random Laser according to claim 1, is characterized in that, described dielectric layer is MgF2Dielectric layer.
3. the device of silica-based parcel GaN nano wire outgoing Random Laser according to claim 1, is characterized in that, described metal level material is Au.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610311836.2A CN105811240A (en) | 2016-05-12 | 2016-05-12 | Silicon-based GaN-nanowire-coated random laser emission apparatus |
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|---|---|---|---|
| CN201610311836.2A CN105811240A (en) | 2016-05-12 | 2016-05-12 | Silicon-based GaN-nanowire-coated random laser emission apparatus |
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| CN105811240A true CN105811240A (en) | 2016-07-27 |
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| CN201610311836.2A Pending CN105811240A (en) | 2016-05-12 | 2016-05-12 | Silicon-based GaN-nanowire-coated random laser emission apparatus |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106654855A (en) * | 2016-11-09 | 2017-05-10 | 西南大学 | Optical chaos generating device based on silicon photon microcavity |
| CN109260603A (en) * | 2018-10-31 | 2019-01-25 | 京东方科技集团股份有限公司 | Method, device for laser therapy and the system of laser source are formed using metal halide perovskite material |
| CN114678760A (en) * | 2022-03-25 | 2022-06-28 | 苏州浪潮智能科技有限公司 | Nanowire laser |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623887A (en) * | 2012-01-13 | 2012-08-01 | 燕山大学 | SP (Surface Plasmon) wave signal amplifier and manufacturing method thereof |
| CN102957086A (en) * | 2012-10-25 | 2013-03-06 | 电子科技大学 | Deep sub-wavelength surface plasma laser |
| US20130148682A1 (en) * | 2010-07-27 | 2013-06-13 | The Regents Of The University Of California | Plasmon lasers at deep subwavelength scale |
| CN105305219A (en) * | 2015-10-09 | 2016-02-03 | 东南大学 | Optical fluid three-color composite random laser |
| CN205752983U (en) * | 2016-05-12 | 2016-11-30 | 广西师范大学 | A kind of device of silica-based parcel GaN nano wire outgoing Random Laser |
-
2016
- 2016-05-12 CN CN201610311836.2A patent/CN105811240A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130148682A1 (en) * | 2010-07-27 | 2013-06-13 | The Regents Of The University Of California | Plasmon lasers at deep subwavelength scale |
| CN102623887A (en) * | 2012-01-13 | 2012-08-01 | 燕山大学 | SP (Surface Plasmon) wave signal amplifier and manufacturing method thereof |
| CN102957086A (en) * | 2012-10-25 | 2013-03-06 | 电子科技大学 | Deep sub-wavelength surface plasma laser |
| CN105305219A (en) * | 2015-10-09 | 2016-02-03 | 东南大学 | Optical fluid three-color composite random laser |
| CN205752983U (en) * | 2016-05-12 | 2016-11-30 | 广西师范大学 | A kind of device of silica-based parcel GaN nano wire outgoing Random Laser |
Non-Patent Citations (1)
| Title |
|---|
| XIANGFENG DUAN等: "Single-nanowire electrically driven lasers", 《NATURE》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106654855A (en) * | 2016-11-09 | 2017-05-10 | 西南大学 | Optical chaos generating device based on silicon photon microcavity |
| CN109260603A (en) * | 2018-10-31 | 2019-01-25 | 京东方科技集团股份有限公司 | Method, device for laser therapy and the system of laser source are formed using metal halide perovskite material |
| CN114678760A (en) * | 2022-03-25 | 2022-06-28 | 苏州浪潮智能科技有限公司 | Nanowire laser |
| CN114678760B (en) * | 2022-03-25 | 2023-11-07 | 苏州浪潮智能科技有限公司 | Nanowire laser |
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Application publication date: 20160727 |