CN100494070C - Fabrication method of whispering gallery mode laser cavity based on zinc oxide single crystal micro-nanodisk - Google Patents
Fabrication method of whispering gallery mode laser cavity based on zinc oxide single crystal micro-nanodisk Download PDFInfo
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- CN100494070C CN100494070C CNB200710020543XA CN200710020543A CN100494070C CN 100494070 C CN100494070 C CN 100494070C CN B200710020543X A CNB200710020543X A CN B200710020543XA CN 200710020543 A CN200710020543 A CN 200710020543A CN 100494070 C CN100494070 C CN 100494070C
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- zinc oxide
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- single crystal
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 26
- 239000013078 crystal Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000011701 zinc Substances 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims abstract description 8
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 4
- 239000010980 sapphire Substances 0.000 claims abstract description 4
- 239000002994 raw material Substances 0.000 claims abstract 2
- 239000012495 reaction gas Substances 0.000 claims abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 239000002107 nanodisc Substances 0.000 claims 1
- 239000002105 nanoparticle Substances 0.000 claims 1
- 238000001704 evaporation Methods 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229960001296 zinc oxide Drugs 0.000 description 14
- 238000002360 preparation method Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 4
- 239000003517 fume Substances 0.000 description 4
- 230000012010 growth Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007805 chemical reaction reactant Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000012938 design process Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- Semiconductor Lasers (AREA)
Abstract
A process for preparing the sound reflection-mode laser cavity based on micron-(or nono-) disc of zinc oxide monocrystal includes such steps as providing Zn powder as raw material, O2 as reaction gas, Si (or sapphire) chip as substrate, and N2 as delivering gas, evaporating Zn powder at 700-800 deg.C, carrying the Zn vapor to substrate at 400-500 deg.C by N2, depositing while oxidizing to obtain zinc oxide crystal kernels, and growing to become symmetric hexagonal micron- (or nano-) discs.
Description
Technical field
The present invention prepares the symmetric dish shape of sixfold zinc oxide micro with simple gas phase transmission method, and, refer in particular to preparation method based on the echo wall die laser cavity of zinc oxide single crystal micronano dish based on this zinc oxide micro-/ nano laser cavity that makes up echo wall die (WGM).
Background technology
Zinc oxide (ZnO) because of its strong exciton binding energy (60meV), has become the focus material of low threshold value semiconductor Ultra-Violet Laser and opto-electronic device as the semiconductor material of a kind of wide direct band gap (3.34eV).ZnO from large size bulk-shaped monocrystal, thin-film material to micro nano structure, its ultra-violet light-emitting, particularly Ultra-Violet Laser all are the research focuses that attract people's attention most.People wish to take this to develop the novel short wavelength light electron device based on the ZnO material, as ultraviolet laser diode, ultraviolet light-emitting diode, transmitter etc., and then bring into play its vital role in fields such as electronics, communication, demonstration, biotechnology and environmental monitorings.
Along with the development of photonic device and optoelectronic integrated technology, the development of micro-cavity laser has caused extensive interest, and (Whispering Gallery Mode, WGM) research of laser extremely attracts people's attention wherein little dish-shaped echo wall die.It utilizes light to form the laser generation microcavity in the total reflection of the little dish of high refractive index medium inboard, thereby has avoided DBR or DFB design process and growth technique complicated in the common semiconductor laser, and can obtain very low threshold value and very high quality factor q.Random Laser in film or the powdered material or the F-P chamber laser in the micro nano structure are more common in the research of relevant ZnO Ultra-Violet Laser at present.How utilizing the superior photoelectric properties of ZnO to make up the new pattern laser device then is a very significant problem.The ZnO film that the researchist of Northwestern Univ USA grows on the SiO2 substrate, little to be processed to form little dish echo wall die (WGM) laser microcavity be exactly an of great value exploration.But this method complicated process of preparation, particle are serious to the absorption of light to scattering of light and substrate, and the WGM laser threshold of acquisition is higher, and the quality factor q value is lower.If can make the little dish of the ZnO of single crystal structure, then the performance of this Laser Devices will be greatly improved.
The symmetric dish shape of the sixfold zinc oxide micro-/ nano single crystal structure that the method that we transmit with gas phase prepares, and based on the WGM laser cavity of this structure, its method is simple, and each micro unit is a monocrystalline, can avoid in the polycrystalline structure particle to scattering of light well, thereby can improve the Q value greatly, reduce stimulated radiation threshold.Corresponding devices can be used for important advanced sciemtifec and technical spheres such as photoelectricity is integrated, photodetection, chemical/biological sensing.
Summary of the invention
The present invention relates to a kind of preparation technology simply based on the preparation method of the echo wall die laser cavity of zinc oxide single crystal micronano dish, the cavity that is made by the present invention has the high advantage of quality factor.
The present invention adopts following technical scheme:
A kind of preparation method of the echo wall die laser cavity based on zinc oxide single crystal micronano dish, be with mass content more than or equal to 99.99% zinc powder as the reaction starting material, with mass concentration more than or equal to 99.99% oxygen as reactant gases, with silicon chip or sapphire sheet as substrate, nitrogen is as transport gas, zinc powder is under the 700-800 ℃ of temperature, zinc powder is evaporated into zinc fume, zinc fume is transferred to area by nitrogen, be deposition and be oxidized to the zinc oxide nucleus on 400-500 ℃ the substrate in temperature, finally become the hexagonal symmetry saucer-like configuration of micro-/ nano size by these nucleus growths.
Compared with prior art, the present invention has following advantage:
The present invention as gain media, constitutes echo wall die laser cavity with its inwall total reflection with the micro-/ nano dish of its preparation.The symmetric dish shape of the sixfold zinc oxide micron/nano structure of the present invention's preparation is a single crystal structure, and its method is simple.Based on the WGM laser apparatus of this structure, can avoid in the polycrystalline structure particle to scattering of light well, thereby can improve the Q value greatly, reduce stimulated radiation threshold.Corresponding devices can be used for important advanced sciemtifec and technical spheres such as photoelectricity is integrated, photodetection, chemical/biological sensing.
1. zinc oxide micro-/ nano dish has both the dual nature of gain media and laser cavity.As gain media, the energy of its absorptive pumping light also produces population inversion.As cavity, it relies on total internal reflection to make the formation closed circuit of light at ZnO nanometer dish, produces laser generation.
2. do not need DBR or DFB design process and growth technique complicated in the common semiconductor laser, preparation technology is simple.
3. the nanometer dish that grows is a single crystal structure, has reduced scatter loss and substrate and has absorbed the loss that causes, helps lowering the threshold value of laser, improves quality factor.
Description of drawings
The resulting zinc-oxide nano dish of Fig. 1 the present invention scanning electron microscopy (SEM) photo (a) hangs down ratio of enlargement, (b) high power.
Fig. 2 zinc-oxide nano dish X-ray diffraction (XRD) photo.
The travel path synoptic diagram of Whispering-gallery-mode laser in Fig. 3 nanometer dish.
Embodiment
A kind of preparation method of the echo wall die laser cavity based on zinc oxide single crystal micronano dish, be with mass content more than or equal to 99.99% zinc powder as the reaction starting material, with mass concentration more than or equal to 99.99% oxygen as reactant gases, with silicon chip or sapphire sheet as substrate, nitrogen is as transport gas, zinc powder is under the 700-800 ℃ of temperature, zinc powder is evaporated into zinc fume, zinc fume is transferred to area by nitrogen, it in temperature deposition and be oxidized to the zinc oxide nucleus on 400-500 ℃ the substrate, finally become the hexagonal symmetry saucer-like configuration of micro-/ nano size by these nucleus growths, above-mentioned reaction will be finished in 30-60 minute.In the present embodiment, the mass content of zinc powder is 99.99% or 99.999%, and the mass concentration of oxygen is 99.99% or 99.999%, and the heating evaporation temperature of zinc powder is 700 ℃, 800 ℃ or 759 ℃, and underlayer temperature is 400 ℃, 500 ℃ or 445 ℃.
With reference to Fig. 1, (a) be the stereoscan photograph of the low ratio of enlargement of zinc oxide micro-/ nano dish, therefrom as can be seen, the output of dish is bigger, and size is even.(b) be the stereoscan photograph of high power, therefrom as can be seen, the size of dish is about 1 μ m, and any surface finish, does not have defective.
With reference to Fig. 2, this figure is the diffraction photo of the X ray of dish, and as can be seen, all diffraction peaks are all corresponding with the zinc oxide crystal indices of wurtzite structure, can find out that from narrow peak width crystal has the excellent lattice structure.Owing to do not have other assorted peak, so the crystal inclusion-free.
With reference to Fig. 3, this figure is the travel path of Whispering-gallery-mode laser, and the condition of laser generation is the integral multiple that this path length is optical wavelength.
Claims (1)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200710020543XA CN100494070C (en) | 2007-03-12 | 2007-03-12 | Fabrication method of whispering gallery mode laser cavity based on zinc oxide single crystal micro-nanodisk |
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| CNB200710020543XA CN100494070C (en) | 2007-03-12 | 2007-03-12 | Fabrication method of whispering gallery mode laser cavity based on zinc oxide single crystal micro-nanodisk |
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| CN101045548A CN101045548A (en) | 2007-10-03 |
| CN100494070C true CN100494070C (en) | 2009-06-03 |
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7801189B2 (en) * | 2007-11-13 | 2010-09-21 | Oewaves, Inc. | Cross modulation-based opto-electronic oscillator with tunable electro-optic optical whispering gallery mode resonator |
| CN101257189B (en) * | 2008-02-28 | 2010-12-15 | 复旦大学 | Wavelength tunable helical annular coupled micro-cavity laser |
| CN102249287B (en) * | 2011-06-22 | 2013-04-24 | 浙江大学 | I-shaped ZnO nano array and preparation method thereof |
| CN102496854A (en) * | 2011-12-27 | 2012-06-13 | 东南大学 | Preparation method of hexagonal zinc oxide whispering gallery mode micro laser diode |
| CN102545046B (en) * | 2012-01-17 | 2013-05-01 | 东南大学 | Method for manufacturing Whispering-gallery mode micro-cavity laser diode |
| CN102570304A (en) * | 2012-01-17 | 2012-07-11 | 东南大学 | Preparation method for micro-nano laser diode |
| CN102545060B (en) * | 2012-01-17 | 2013-03-20 | 东南大学 | Preparation method of micro laser diode array |
| CN105369341A (en) * | 2015-12-15 | 2016-03-02 | 淮北师范大学 | Method used for preparing uniform large single-orientation ZnO hexagonal micro disk |
| CN107356584B (en) * | 2017-09-07 | 2020-08-11 | 东南大学 | Preparation method of zinc oxide-silver composite microcavity structure surface enhanced Raman substrate |
| CN110829181B (en) * | 2019-11-18 | 2025-01-28 | 苏州大学 | Semiconductor hexagonal micro-disk laser with double triangular whispering gallery optical resonance mode |
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Owner name: NANTONG DONGHAI MACHINE TOOLS CO., LTD. Free format text: FORMER OWNER: SOWTHEAST UNIV. Effective date: 20140820 Owner name: SOWTHEAST UNIV. Effective date: 20140820 |
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Effective date of registration: 20140820 Address after: 226600, No. 118, South West Road, Li Town, Haian County, Jiangsu, Nantong Patentee after: Nantong Donghai Machine Tools Co., Ltd. Patentee after: Southeast University Address before: 210096 Jiangsu city Nanjing Province four pailou No. 2 Patentee before: Southeast University |
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