CN105721997A - 一种mems硅麦克风及其制备方法 - Google Patents
一种mems硅麦克风及其制备方法 Download PDFInfo
- Publication number
- CN105721997A CN105721997A CN201510164691.3A CN201510164691A CN105721997A CN 105721997 A CN105721997 A CN 105721997A CN 201510164691 A CN201510164691 A CN 201510164691A CN 105721997 A CN105721997 A CN 105721997A
- Authority
- CN
- China
- Prior art keywords
- silicon
- vibrating diaphragm
- pole plate
- silica
- back pole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 161
- 239000010703 silicon Substances 0.000 title claims abstract description 161
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 155
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 186
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 29
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 18
- 239000003990 capacitor Substances 0.000 claims abstract description 8
- 230000004888 barrier function Effects 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- 150000003376 silicon Chemical class 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 4
- 230000009467 reduction Effects 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 13
- 238000005516 engineering process Methods 0.000 abstract description 10
- 238000000926 separation method Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 13
- 230000008859 change Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000007812 deficiency Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- NAXKFVIRJICPAO-LHNWDKRHSA-N [(1R,3S,4R,6R,7R,9S,10S,12R,13S,15S,16R,18S,19S,21S,22S,24S,25S,27S,28R,30R,31R,33S,34S,36R,37R,39R,40S,42R,44R,46S,48S,50R,52S,54S,56S)-46,48,50,52,54,56-hexakis(hydroxymethyl)-2,8,14,20,26,32,38,43,45,47,49,51,53,55-tetradecaoxa-5,11,17,23,29,35,41-heptathiapentadecacyclo[37.3.2.23,7.29,13.215,19.221,25.227,31.233,37.04,6.010,12.016,18.022,24.028,30.034,36.040,42]hexapentacontan-44-yl]methanol Chemical compound OC[C@H]1O[C@H]2O[C@H]3[C@H](CO)O[C@H](O[C@H]4[C@H](CO)O[C@H](O[C@@H]5[C@@H](CO)O[C@H](O[C@H]6[C@H](CO)O[C@H](O[C@H]7[C@H](CO)O[C@@H](O[C@H]8[C@H](CO)O[C@@H](O[C@@H]1[C@@H]1S[C@@H]21)[C@@H]1S[C@H]81)[C@H]1S[C@@H]71)[C@H]1S[C@H]61)[C@H]1S[C@@H]51)[C@H]1S[C@@H]41)[C@H]1S[C@H]31 NAXKFVIRJICPAO-LHNWDKRHSA-N 0.000 description 2
- 239000008280 blood Substances 0.000 description 2
- 210000004369 blood Anatomy 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 230000005534 acoustic noise Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 238000013316 zoning Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/038—Bonding techniques not provided for in B81C2203/031 - B81C2203/037
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (10)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510164691.3A CN105721997B (zh) | 2015-04-08 | 2015-04-08 | 一种mems硅麦克风及其制备方法 |
EP15738235.9A EP3094112B8 (en) | 2015-04-08 | 2015-04-23 | Silicon mems microphone and manufacturing method therefor |
PCT/CN2015/077281 WO2016161670A1 (zh) | 2015-04-08 | 2015-04-23 | 一种mems硅麦克风及其制备方法 |
US14/764,811 US9676615B2 (en) | 2015-04-08 | 2015-04-23 | MEMS silicone microphone and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510164691.3A CN105721997B (zh) | 2015-04-08 | 2015-04-08 | 一种mems硅麦克风及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105721997A true CN105721997A (zh) | 2016-06-29 |
CN105721997B CN105721997B (zh) | 2019-04-05 |
Family
ID=56144630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510164691.3A Active CN105721997B (zh) | 2015-04-08 | 2015-04-08 | 一种mems硅麦克风及其制备方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9676615B2 (zh) |
EP (1) | EP3094112B8 (zh) |
CN (1) | CN105721997B (zh) |
WO (1) | WO2016161670A1 (zh) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107786929A (zh) * | 2016-08-26 | 2018-03-09 | 上海微联传感科技有限公司 | 硅麦克风 |
CN108055604A (zh) * | 2017-12-07 | 2018-05-18 | 钰太芯微电子科技(上海)有限公司 | 一种背腔增强的麦克风结构及电子设备 |
CN108313975A (zh) * | 2017-01-16 | 2018-07-24 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
CN108609575A (zh) * | 2016-12-12 | 2018-10-02 | 中芯国际集成电路制造(上海)有限公司 | 一种mems器件及其制备方法、电子装置 |
CN108622843A (zh) * | 2017-03-22 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | Mems麦克风及其形成方法 |
CN108622846A (zh) * | 2017-03-22 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | Mems麦克风及其形成方法 |
CN108810776A (zh) * | 2018-06-19 | 2018-11-13 | 杭州法动科技有限公司 | 电容式mems麦克风及其制造方法 |
CN110357030A (zh) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | Mems器件及其制备方法 |
CN110896518A (zh) * | 2019-12-17 | 2020-03-20 | 安徽奥飞声学科技有限公司 | 一种mems结构的制造方法 |
CN110972048A (zh) * | 2018-09-28 | 2020-04-07 | 台湾积体电路制造股份有限公司 | 麦克风、微机电系统装置及制造微机电系统装置的方法 |
CN111148000A (zh) * | 2019-12-31 | 2020-05-12 | 瑞声科技(南京)有限公司 | 一种mems麦克风及阵列结构 |
CN112533119A (zh) * | 2019-09-18 | 2021-03-19 | 无锡华润上华科技有限公司 | Mems麦克风及其制备方法 |
CN112788508A (zh) * | 2019-11-05 | 2021-05-11 | 鑫创科技股份有限公司 | 微机电系统麦克风的结构及其制作方法 |
CN113596690A (zh) * | 2021-08-13 | 2021-11-02 | 中北大学 | 新型压电式mems麦克风的结构及装置 |
CN113709642A (zh) * | 2021-06-21 | 2021-11-26 | 天津大学 | 压电mems执行器及其形成方法和运行方法 |
CN114598979A (zh) * | 2022-05-10 | 2022-06-07 | 迈感微电子(上海)有限公司 | 一种双振膜mems麦克风及其制造方法 |
CN115321475A (zh) * | 2022-10-13 | 2022-11-11 | 苏州敏芯微电子技术股份有限公司 | 声波感测结构的制作方法 |
WO2023202418A1 (zh) * | 2022-04-20 | 2023-10-26 | 苏州敏芯微电子技术股份有限公司 | 一种麦克风组件及电子设备 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9878899B2 (en) * | 2015-10-02 | 2018-01-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for reducing in-process and in-use stiction for MEMS devices |
JP6132047B1 (ja) * | 2016-03-28 | 2017-05-24 | 国立大学法人東北大学 | 圧力センサとその製造方法 |
KR101776752B1 (ko) | 2016-09-02 | 2017-09-08 | 현대자동차 주식회사 | 마이크로폰 |
KR102322257B1 (ko) * | 2017-05-11 | 2021-11-04 | 현대자동차 주식회사 | 마이크로폰 및 그 제조 방법 |
CN107337174B (zh) * | 2017-06-27 | 2019-04-02 | 杭州电子科技大学 | 一种多晶硅振膜结构的制作方法 |
US10349188B2 (en) * | 2017-10-18 | 2019-07-09 | Akustica, Inc. | MEMS microphone system and method |
US11206493B2 (en) * | 2018-03-30 | 2021-12-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Sensor device and manufacturing method thereof |
CN112334867A (zh) | 2018-05-24 | 2021-02-05 | 纽约州立大学研究基金会 | 电容传感器 |
US11119532B2 (en) * | 2019-06-28 | 2021-09-14 | Intel Corporation | Methods and apparatus to implement microphones in thin form factor electronic devices |
US12091313B2 (en) | 2019-08-26 | 2024-09-17 | The Research Foundation For The State University Of New York | Electrodynamically levitated actuator |
DE102019215086A1 (de) * | 2019-10-01 | 2021-04-01 | Robert Bosch Gmbh | Mikromechanische Vorrichtung mit einem Anschlag und Herstellungsverfahren |
CN111212369A (zh) * | 2019-12-31 | 2020-05-29 | 杭州士兰微电子股份有限公司 | Mems麦克风及其制造方法 |
CN111131985A (zh) * | 2019-12-31 | 2020-05-08 | 歌尔股份有限公司 | 防尘结构、麦克风封装结构以及电子设备 |
DE102020100244A1 (de) | 2020-01-08 | 2021-07-08 | X-FAB Global Services GmbH | Verfahren zur Herstellung eines Membran-Bauelements und ein Membran-Bauelement |
EP3937512A1 (en) * | 2020-07-10 | 2022-01-12 | Infineon Technologies AG | Method and structure for sensors on glass |
CN111954138A (zh) * | 2020-08-19 | 2020-11-17 | 苏州礼乐乐器股份有限公司 | 一种带音梁及音隧的全频段硅麦 |
US12047744B2 (en) * | 2021-04-26 | 2024-07-23 | Rf360 Singapore Pte. Ltd. | Etch stop and protection layer for capacitor processing in electroacoustic devices |
CN114143689B (zh) * | 2022-01-10 | 2024-06-04 | 刘昊 | 一种硅麦克风的封装结构 |
CN114513730B (zh) * | 2022-04-20 | 2022-08-23 | 苏州敏芯微电子技术股份有限公司 | 麦克风组件及电子设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103139691A (zh) * | 2013-02-22 | 2013-06-05 | 上海微联传感科技有限公司 | 采用多孔soi硅硅键合的mems硅麦克风及其制造方法 |
US8705777B2 (en) * | 2011-10-12 | 2014-04-22 | Electronics And Telecommunications Research Institute | MEMS microphone and method of manufacturing the same |
CN103964368A (zh) * | 2013-01-25 | 2014-08-06 | 英飞凌科技股份有限公司 | Mems器件和制造mems器件的方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7329933B2 (en) * | 2004-10-29 | 2008-02-12 | Silicon Matrix Pte. Ltd. | Silicon microphone with softly constrained diaphragm |
GB0605576D0 (en) * | 2006-03-20 | 2006-04-26 | Oligon Ltd | MEMS device |
KR101096544B1 (ko) * | 2009-11-18 | 2011-12-20 | 주식회사 비에스이 | 멤스 마이크로폰 패키지 및 패키징 방법 |
CN103607684B (zh) * | 2013-11-29 | 2019-01-18 | 上海集成电路研发中心有限公司 | 电容式硅麦克风及其制备方法 |
CN104378724A (zh) * | 2014-11-18 | 2015-02-25 | 缪建民 | 一种无背部大声学腔体的mems硅麦克风 |
-
2015
- 2015-04-08 CN CN201510164691.3A patent/CN105721997B/zh active Active
- 2015-04-23 EP EP15738235.9A patent/EP3094112B8/en active Active
- 2015-04-23 WO PCT/CN2015/077281 patent/WO2016161670A1/zh active Application Filing
- 2015-04-23 US US14/764,811 patent/US9676615B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8705777B2 (en) * | 2011-10-12 | 2014-04-22 | Electronics And Telecommunications Research Institute | MEMS microphone and method of manufacturing the same |
CN103964368A (zh) * | 2013-01-25 | 2014-08-06 | 英飞凌科技股份有限公司 | Mems器件和制造mems器件的方法 |
CN103139691A (zh) * | 2013-02-22 | 2013-06-05 | 上海微联传感科技有限公司 | 采用多孔soi硅硅键合的mems硅麦克风及其制造方法 |
Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107786929B (zh) * | 2016-08-26 | 2023-12-26 | 华景科技无锡有限公司 | 硅麦克风 |
CN107786929A (zh) * | 2016-08-26 | 2018-03-09 | 上海微联传感科技有限公司 | 硅麦克风 |
CN108609575B (zh) * | 2016-12-12 | 2020-09-08 | 中芯国际集成电路制造(上海)有限公司 | 一种mems器件及其制备方法、电子装置 |
CN108609575A (zh) * | 2016-12-12 | 2018-10-02 | 中芯国际集成电路制造(上海)有限公司 | 一种mems器件及其制备方法、电子装置 |
US10689246B2 (en) | 2017-01-16 | 2020-06-23 | Semiconductor Manufacturing International (Shanghai) Corporation | Low contact resistance semiconductor structure and method for manufacturing the same |
CN108313975B (zh) * | 2017-01-16 | 2019-12-13 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
US10815120B2 (en) | 2017-01-16 | 2020-10-27 | Semiconductor Manufacturing International (Shanghai) Corporation | Method for manufacturing low contact resistance semiconductor structure |
CN108313975A (zh) * | 2017-01-16 | 2018-07-24 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
CN108622846B (zh) * | 2017-03-22 | 2020-09-08 | 中芯国际集成电路制造(上海)有限公司 | Mems麦克风及其形成方法 |
CN108622843A (zh) * | 2017-03-22 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | Mems麦克风及其形成方法 |
CN108622846A (zh) * | 2017-03-22 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | Mems麦克风及其形成方法 |
CN108055604A (zh) * | 2017-12-07 | 2018-05-18 | 钰太芯微电子科技(上海)有限公司 | 一种背腔增强的麦克风结构及电子设备 |
CN110357030A (zh) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | Mems器件及其制备方法 |
CN110357030B (zh) * | 2018-04-11 | 2022-12-16 | 中芯国际集成电路制造(上海)有限公司 | Mems器件及其制备方法 |
CN108810776B (zh) * | 2018-06-19 | 2023-09-29 | 杭州法动科技有限公司 | 电容式mems麦克风及其制造方法 |
CN108810776A (zh) * | 2018-06-19 | 2018-11-13 | 杭州法动科技有限公司 | 电容式mems麦克风及其制造方法 |
CN110972048A (zh) * | 2018-09-28 | 2020-04-07 | 台湾积体电路制造股份有限公司 | 麦克风、微机电系统装置及制造微机电系统装置的方法 |
CN110972048B (zh) * | 2018-09-28 | 2021-08-06 | 台湾积体电路制造股份有限公司 | 麦克风、微机电系统装置及制造微机电系统装置的方法 |
CN112533119B (zh) * | 2019-09-18 | 2022-05-06 | 无锡华润上华科技有限公司 | Mems麦克风及其制备方法 |
CN112533119A (zh) * | 2019-09-18 | 2021-03-19 | 无锡华润上华科技有限公司 | Mems麦克风及其制备方法 |
US12022270B2 (en) | 2019-09-18 | 2024-06-25 | Csmc Technologies Fab2 Co., Ltd. | MEMS microphone and preparation method therefor |
US11172287B2 (en) | 2019-11-05 | 2021-11-09 | Solid State System Co., Ltd. | Structure of micro-electro-mechanical-system microphone and method for fabricating the same |
TWI751451B (zh) * | 2019-11-05 | 2022-01-01 | 鑫創科技股份有限公司 | 微機電系統麥克風的結構及其製作方法 |
CN112788508A (zh) * | 2019-11-05 | 2021-05-11 | 鑫创科技股份有限公司 | 微机电系统麦克风的结构及其制作方法 |
CN112788508B (zh) * | 2019-11-05 | 2022-09-13 | 鑫创科技股份有限公司 | 微机电系统麦克风的结构及其制作方法 |
CN110896518A (zh) * | 2019-12-17 | 2020-03-20 | 安徽奥飞声学科技有限公司 | 一种mems结构的制造方法 |
CN110896518B (zh) * | 2019-12-17 | 2021-03-12 | 安徽奥飞声学科技有限公司 | 一种mems结构的制造方法 |
CN111148000A (zh) * | 2019-12-31 | 2020-05-12 | 瑞声科技(南京)有限公司 | 一种mems麦克风及阵列结构 |
CN113709642A (zh) * | 2021-06-21 | 2021-11-26 | 天津大学 | 压电mems执行器及其形成方法和运行方法 |
CN113596690A (zh) * | 2021-08-13 | 2021-11-02 | 中北大学 | 新型压电式mems麦克风的结构及装置 |
WO2023202418A1 (zh) * | 2022-04-20 | 2023-10-26 | 苏州敏芯微电子技术股份有限公司 | 一种麦克风组件及电子设备 |
CN114598979A (zh) * | 2022-05-10 | 2022-06-07 | 迈感微电子(上海)有限公司 | 一种双振膜mems麦克风及其制造方法 |
CN114598979B (zh) * | 2022-05-10 | 2022-08-16 | 迈感微电子(上海)有限公司 | 一种双振膜mems麦克风及其制造方法 |
CN115321475A (zh) * | 2022-10-13 | 2022-11-11 | 苏州敏芯微电子技术股份有限公司 | 声波感测结构的制作方法 |
Also Published As
Publication number | Publication date |
---|---|
US9676615B2 (en) | 2017-06-13 |
WO2016161670A1 (zh) | 2016-10-13 |
US20160304337A1 (en) | 2016-10-20 |
CN105721997B (zh) | 2019-04-05 |
EP3094112A4 (en) | 2016-12-28 |
EP3094112A1 (en) | 2016-11-16 |
EP3094112B1 (en) | 2019-04-10 |
EP3094112B8 (en) | 2019-07-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105721997A (zh) | 一种mems硅麦克风及其制备方法 | |
US9266716B2 (en) | MEMS acoustic transducer with silicon nitride backplate and silicon sacrificial layer | |
KR101570931B1 (ko) | 다이어프램과 카운터 전극 사이에 저압 영역을 갖는 mems 마이크로폰 | |
CN109905833B (zh) | Mems麦克风制造方法 | |
JP4966370B2 (ja) | シングルダイ型mems音響トランスデューサおよび製造方法 | |
US8796790B2 (en) | Method and structure of monolithetically integrated micromachined microphone using IC foundry-compatiable processes | |
US8509462B2 (en) | Piezoelectric micro speaker including annular ring-shaped vibrating membranes and method of manufacturing the piezoelectric micro speaker | |
WO2020133375A1 (zh) | Mems声音传感器、mems麦克风及电子设备 | |
GB2561925A (en) | MEMS devices and processes | |
US20110165720A1 (en) | Microphone with Irregular Diaphragm | |
US8955212B2 (en) | Method for manufacturing a micro-electro-mechanical microphone | |
CN101346014A (zh) | 微机电系统麦克风及其制备方法 | |
CN105792084B (zh) | Mems麦克风及其制造方法 | |
CN102333254B (zh) | 一种与cmos电路纵向集成的mems硅麦克风及其制备方法 | |
CN204836579U (zh) | 一种梳齿结构mems硅麦克风 | |
EP2969911A1 (en) | Mems acoustic transducer with silicon nitride backplate and silicon sacrificial layer | |
US20160142829A1 (en) | Integrated package forming wide sense gap micro electro-mechanical system microphone and methodologies for fabricating the same | |
CN105359553A (zh) | 具有悬挂式振膜的硅麦克风和具有该硅麦克风的系统 | |
WO2020140574A1 (zh) | Mems 麦克风制造方法 | |
TW201242382A (en) | MEMS microphone device and method for making same | |
WO2018103208A1 (zh) | 一种mems麦克风芯片以及mems麦克风 | |
WO2020140572A1 (zh) | Mems麦克风制造方法 | |
KR20200036764A (ko) | 이중 백플레이트 및 다이어프램 마이크로폰 | |
WO2020140571A1 (zh) | 一种mems麦克风 | |
CN116347310A (zh) | 一种mems麦克风结构及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20190308 Address after: 214000 China Sensor Network International Innovation Park F2, 200 Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province Applicant after: Huajing Technology Wuxi Co.,Ltd. Address before: Floor 2, Building 439 Chunxiao Road, Zhangjiang High-tech Park, Pudong New Area, Shanghai, 200120 Applicant before: MICROLINK SENSTECH SHANGHAI Ltd. |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240425 Address after: 214135 China Sensor Network International Innovation Park F2, 200 Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province Patentee after: SV SENSTECH (WUXI) CO.,LTD. Country or region after: China Address before: 214000 China Sensor Network International Innovation Park F2, 200 Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province Patentee before: Huajing Technology Wuxi Co.,Ltd. Country or region before: China |
|
TR01 | Transfer of patent right |