WO2020133375A1 - Mems声音传感器、mems麦克风及电子设备 - Google Patents

Mems声音传感器、mems麦克风及电子设备 Download PDF

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Publication number
WO2020133375A1
WO2020133375A1 PCT/CN2018/125411 CN2018125411W WO2020133375A1 WO 2020133375 A1 WO2020133375 A1 WO 2020133375A1 CN 2018125411 W CN2018125411 W CN 2018125411W WO 2020133375 A1 WO2020133375 A1 WO 2020133375A1
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Prior art keywords
diaphragm
mems
back plate
conductive layer
layer
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PCT/CN2018/125411
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English (en)
French (fr)
Inventor
何宪龙
谢冠宏
邱士嘉
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共达电声股份有限公司
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Priority to CN201880026720.1A priority Critical patent/CN110574397B/zh
Priority to PCT/CN2018/125411 priority patent/WO2020133375A1/zh
Publication of WO2020133375A1 publication Critical patent/WO2020133375A1/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones

Definitions

  • the invention relates to the technical field of microphones, in particular to a MEMS sound sensor and its preparation method, MEMS microphone and electronic equipment.
  • MEMS Micro-Electro-Mechanical System
  • MEMS microphone is an electric energy transducer manufactured based on MEMS technology, which has the advantages of small size, good frequency response characteristics and low noise. With the miniaturization of electronic devices, MEMS microphones are more and more widely used in these devices.
  • the MEMS sound sensor is a key device in the MEMS microphone, and its performance directly affects the performance of the entire MEMS microphone. The sensitivity of the traditional MEMS sound sensor is low and cannot meet the user's use requirements.
  • a MEMS sound sensor a MEMS microphone, and an electronic device are provided.
  • a MEMS sound sensor for detecting sound through at least one of air sound pressure change and mechanical vibration includes:
  • a substrate with a back hole formed on the substrate A substrate with a back hole formed on the substrate
  • the back plate is arranged above the substrate, and part of the area is exposed by the back hole;
  • a diaphragm which is disposed opposite to the back plate and has a gap with the back plate; the diaphragm and the back plate form a capacitor structure;
  • the connecting post includes a first end and a second end that are oppositely arranged; the first end of the connecting post is electrically connected to the middle region of the diaphragm; the second end of the connecting post is fixedly connected to the back plate To fix and support the diaphragm on the back plate;
  • a MEMS microphone includes a printed circuit board, a MEMS sound sensor provided on the printed circuit board, and an integrated circuit provided on the printed circuit board; the MEMS microphone uses the MEMS as described in any of the foregoing embodiments Sound sensor.
  • An electronic device includes a device body and a MEMS microphone provided on the device body; the MEMS microphone uses the MEMS microphone as described above.
  • FIG. 1 is a cross-sectional view of the MEMS sound sensor in the first embodiment.
  • FIG. 2 is a cross-sectional view of the MEMS sound sensor in the second embodiment.
  • FIG 3 is a cross-sectional view of the MEMS sound sensor in the third embodiment.
  • FIG. 4 is a cross-sectional view of the MEMS sound sensor in the fourth embodiment.
  • FIG. 5 is a cross-sectional view of the MEMS sound sensor in the fifth embodiment.
  • FIG. 6 is a cross-sectional view of the MEMS sound sensor in the sixth embodiment.
  • FIG. 7 is a schematic diagram of the structure of the diaphragm in an embodiment.
  • FIG. 8 is a schematic structural diagram of a MEMS microphone in an embodiment.
  • FIG. 9 is a schematic structural view of a MEMS microphone in another embodiment.
  • FIG. 10 is a schematic structural diagram of a MEMS microphone in another embodiment.
  • FIG. 1 is a schematic structural diagram of a MEMS sound sensor in an embodiment.
  • the MEMS sound sensor can also be called a MEMS sensor or a MEMS chip.
  • the MEMS sound sensor is used to detect sound by at least one of air sound pressure change and mechanical vibration, that is, the MEMS sound sensor can detect the change of air pressure caused by the sound to achieve sound detection, or by detecting sound Or vibration caused by mechanical external force to achieve sound detection.
  • the vibration referred to in this case is exemplified by vibration of bones such as ear bones or other solids caused by sound or mechanical external force.
  • the MEMS sound sensor includes a substrate 110, a back plate 200, a diaphragm 300, and a connecting post 400.
  • a back hole 112 is formed on the substrate 110.
  • the back plate 200 may also be referred to as a back plate.
  • the back plate 200 is disposed above the substrate 110 and is fixed by the substrate 110. And part of the area of the substrate 110 is exposed by the back hole 112.
  • the diaphragm 300 is disposed opposite to the back plate 200, and the diaphragm 300 is disposed on the side of the back plate 200 away from the substrate 110.
  • a gap 10 is formed between the diaphragm 300 and the back plate 200.
  • the gap 10 is not filled with other substances and is an air gap.
  • the diaphragm 300 and the back plate 200 constitute a capacitor structure.
  • the shape of the diaphragm 300 is not particularly limited.
  • the diaphragm 300 may have a circular or square shape.
  • the connecting post 400 includes a first end 400a and a second end 400b disposed oppositely. Wherein, the first end 400a is connected to the middle region of the diaphragm 300, and is electrically connected to the diaphragm 300. The second end 400b is fixedly connected to the backplane 200. The connecting post 400 is connected to the backplane 200 through the second end 400b, so as to fix and support the diaphragm 300 on the backplane 200.
  • the diaphragm 300 is fixedly supported on the back plate 200 through the connecting post 400, so that the edge area around the diaphragm 300 does not need other fixing structures to support and fix it, that is, the edge area of the diaphragm 300 and the entire MEMS sensor The other structures are completely separated, so that the sensitivity of the entire diaphragm 300 can be greatly improved to meet people's needs.
  • at least one mass 310 is provided in the edge area of the diaphragm 300.
  • the edge area is relative to the middle area, that is, the edge area is an area away from the connecting post 400.
  • There is a gap d between the mass 310 and the back plate 200 so that external airflow can enter the gap 10 between the diaphragm 300 and the back plate 200 through the gap.
  • the air will enter the gap 10 between the back plate 200 and the diaphragm 300 through the gap d between the mass 310 and the back plate 200, so that the diaphragm 300 is at this air pressure or sound pressure Vibration occurs under the action of, or the change in air pressure below the diaphragm 300 directly pushes the diaphragm 200 to cause the diaphragm 200 to vibrate, which in turn causes the capacitor structure to produce a changed capacitance, which enables detection of sound waves.
  • the changed capacitance signal can be processed through an ASIC (Application Specific Integrated Circuit) integrated circuit (IC) chip and the electrical signal after the acoustoelectric conversion is output.
  • ASIC Application Specific Integrated Circuit
  • the gap d between the mass 310 and the back plate 200 can be set as needed to minimize the damping effect that exists when air enters and exits the gap 10, and to ensure that the mass 310 and the back plate 200 are not easily affected by static electricity or There is a bonding problem with external forces.
  • the MEMS sound sensor When the MEMS sound sensor is in direct or indirect contact with bones that conduct sound (such as ear bones, vocal cords, etc.) (usually the side where the diaphragm 300 is located close to the ear bone), because the corresponding bones will mechanically vibrate during speech, the machine The vibration causes the diaphragm 300 to vibrate. Since the mass region 310 is provided in the edge area of the diaphragm 300, even a small mechanical vibration can cause the vibration of the diaphragm 300, and the detection of the sound is realized, that is, the MEMS sound sensor has high sensitivity.
  • bones that conduct sound such as ear bones, vocal cords, etc.
  • the MEMS sound sensor in this embodiment can work as a vibration sensor, so that when the user is in a noisy environment, it can be brought into contact with the human body's sound conduction tissue (such as the ear bones), by detecting the solid matter caused by the person when speaking Vibration realizes the detection of sound, and the entire detection process will not be disturbed by environmental noise, so that the entire MEMS sound sensor has a high signal-to-noise ratio.
  • the human body's sound conduction tissue such as the ear bones
  • both the back plate 200 and the diaphragm 300 Since air can directly enter the gap d between the mass 310 and the back plate 200 to cause vibration of the diaphragm 300 or mechanical vibration to cause vibration of the diaphragm 300, both the back plate 200 and the diaphragm 300 The sound hole may not be opened, thereby making the electrode area in the backplane 200 larger, ensuring that the MEMS sound sensor has a high capacitance change, and further improving the sensitivity of the detection process.
  • the back plate 200 does not need to be cut to release the mass 310, so that the back plate 200 has a full-surface structure, and thus the entire MEMS sound sensor has a higher capacitance change.
  • the diaphragm 300 covers the effective area of the backplane 200, which is also a full-face structure, with a larger area, which makes it possible to form a mass 310 with a larger mass, and makes the entire MEMS sound sensor have a higher capacitance change .
  • a sound hole 230 is defined in the back plate 200, as shown in FIG.
  • the sound hole 230 is provided in the area on the back plate 200 close to the connecting post 400, and the sound hole 230 is not provided below the area where the mass 310 is located.
  • the sound hole 230 may also be disposed in an area near the mass 310, as shown in FIG. 2. It can be understood that the sound hole 230 may also be provided on the entire area of the back plate 200 exposed to the back hole 112, as shown in FIG. 3. 4 is a cross-sectional view of a MEMS sound sensor in another embodiment.
  • the back plate 200 is not provided with sound holes, and only the sound hole 320 is formed on the diaphragm 300.
  • the sound hole 320 is opened on the diaphragm 300 between the mass 310 and the connecting post 400.
  • sound holes may be provided on the back plate 200 and the diaphragm 300 at the same time, as shown in FIGS. 5 and 6. At this time, the sound hole 230 need not be formed on the entire surface of the back plate 200.
  • the mass 310 includes a first part.
  • the first part is formed on the side of the diaphragm 300 facing the back plate 200.
  • the side facing the diaphragm 300 in the first part is also provided with an anti-adhesion portion 330.
  • the gap d may be sufficiently small, so that the capacitive structure formed by the backplate 200 and the diaphragm 300 has a high capacitance change, and thus the MEMS sound sensor has a very high sensitivity.
  • the anti-adhesion portion 330 may have a convex structure, as shown in FIG. 1.
  • the first part, the anti-adhesion part 330 and the material layer where the diaphragm 300 is located are formed in the same process step, and the first part and the anti-adhesion part 330 are formed by an etching process, that is, the materials of the first part, the anti-adhesion part 330 and the diaphragm 300 The same and one-piece structure.
  • the mass block 310 may further include a second part (not shown in the figure).
  • the second part is formed on the side of the diaphragm 300 away from the back plate 200, that is, it is disposed opposite to the first part. By adding the second part, a mass with greater mass can be obtained to improve the sensitivity.
  • the second part may be formed on the diaphragm 300 through additional exposure, development, and etching processes after the diaphragm 300 is formed.
  • the second part and the diaphragm 300 have the same material, and form an integral structure with the diaphragm 300.
  • the quality of the mass block 310 can be adjusted, so as to realize the quality adjustment of the entire mass block 310, and thus the adjustment of the sensing frequency band of the entire MEMS vibration sensor.
  • the frequency detection range of the MEMS sound sensor is 20 Hz to 20 KHz.
  • the substrate 110 may be a silicon substrate directly. It can be understood that the substrate 110 may also be other base structures, such as an SOI base.
  • the backplane 200 includes a first conductive layer 210 and a protective layer 220.
  • the first conductive layer 210 is connected to the substrate 110 through the first insulating layer 120.
  • the first conductive layer 210 is a patterned layer (not shown in the figure) to form the electrode extraction area of the back plate electrode and the diaphragm.
  • the first insulating layer 120 may be a dielectric oxide layer, such as silicon dioxide.
  • the protective layer 220 covers the first conductive layer 210, as shown in FIG.
  • the protective layer 220 is a passivation layer.
  • the protective layer 220 may be silicon nitride (silicon nitride) or silicon-rich silicon nitride (si-rich silicon nitride).
  • the surface of the protective layer 220 must be or processed to be non-hydrophilic, that is, the surfaces of the protective layer 220 are all non-hydrophilic surfaces.
  • a very thin silicon oxide material is not completely removed, it will be attached to the protective layer, which will also cause the protective layer to be hydrophilic (hydrophilic); or the protective layer silicon nitride (silicon nitride), silicon rich Silicon nitride (si-rich silicon nitride) itself has a certain degree of hydrophilicity after the semiconductor process is completed.
  • silicon nitride silicon nitride
  • silicon rich Silicon nitride silicon rich Silicon nitride
  • the first conductive layer 210 is a patterned conductive layer.
  • the first conductive layer 210 may be a polysilicon layer, a silicon germanium compound (SiGe) layer, or a metal layer.
  • the metal of the metal layer may be aluminum (Al), aluminum-copper alloy (AlCu), platinum (Pt), gold (Au), or the like.
  • the materials of the first conductive layer 210 and the diaphragm 300 are both polysilicon (polySi).
  • the first conductive layer 210 includes a back plate electrode and a diaphragm extraction region (not shown in the figure) that are separated from each other.
  • the backplane electrode serves as one electrode of the capacitor, and the diaphragm 300 serves as another electrode of the capacitor.
  • the two form a capacitor structure.
  • the diaphragm lead-out area is connected to the second end 400b of the connecting post 400 to lead the electrode where the diaphragm 300 is located.
  • the MEMS sound sensor further includes a second insulating layer 130, a back plate electrode extraction electrode 140, and a diaphragm extraction electrode 150.
  • the second insulating layer 130 is disposed on the first conductive layer 210. Both the second insulating layer 130 and the first insulating layer 120 may be dielectric oxide layers, for example, prepared by using silicon dioxide.
  • the back plate electrode extraction electrode 140 is formed on the second insulating layer 130, and penetrates the entire second insulating layer 130 and is connected to the back plate electrode in the first conductive layer 210 to extract the back plate electrode.
  • the diaphragm extraction electrode 150 is also formed on the second insulating layer 130 and penetrates the entire second insulating layer 130 and is connected to the diaphragm extraction region in the second conductive layer 210.
  • a backplane pad 162 and a diaphragm pad 164 are also formed on the MEMS sound sensor, as shown in FIG. 1.
  • the backplane pad 162 is formed on the backplane extraction electrode 140, and the diaphragm pad 164 is formed on the diaphragm extraction electrode 150, respectively to electrically connect the backplane electrode and the diaphragm 300 to the outside.
  • the material layers where the conductive layer in the diaphragm 300, the mass 310, the back electrode extraction electrode 140, the diaphragm extraction electrode 150, and the connecting post 400 are all formed in the same process step, that is, the diaphragm 300, the mass 310, the back plate electrode extraction electrode 140, the diaphragm extraction electrode 150, and the conductive layer in the connecting column 400 are made of the same material.
  • the conductive layers in the diaphragm 300, the mass 310, the backplane electrode extraction electrode 140, the diaphragm extraction electrode 150, and the connecting pillar 400 are all formed through the same polysilicon deposition process step.
  • the second insulating layer 130 is formed on the back plate 200 first, and then the second insulating layer 130 is etched to form a penetration area corresponding to the back plate electrode extraction electrode 140, the diaphragm extraction electrode 150, and the connection post 400, Fill the entire surface with material to form a complete material layer. Due to the need to fill the previously etched grooves, the thickness of the conductive layer formed at this time is relatively thick, at this time, the formed conductive layer such as polysilicon material needs to be formed by CMP (Chemical, Mechanical, Polishing process) or silicon etching process The layer is etched to the desired thickness of the diaphragm 300.
  • CMP Chemical, Mechanical, Polishing process
  • the material layer is etched to form the diaphragm 300, the back electrode extraction electrode 140, and the diaphragm extraction electrode 150 which are independent of each other.
  • the diaphragm 300 may adopt single crystal silicon, polycrystalline silicon, silicon nitride, silicon-rich silicon nitride, silicon germanium compound (SiGe), metal, or the like.
  • the metal may be aluminum (Al), aluminum-copper alloy (AlCu), platinum (Pt), gold (Au), and the like. Therefore, any one of the foregoing materials may be used for the material layer.
  • the diaphragm 300 uses silicon nitride or silicon-rich silicon nitride as a material, a layer of conductive material needs to be added to the surface as an electrode of the diaphragm 300.
  • the edge area of the diaphragm 300 is completely isolated from other areas of the entire MEMS sound sensor, that is, the diaphragm 300 is completely fixed and supported by the connecting post 400, without borrowing other fixing structures to the periphery of the diaphragm 300 To be fixed.
  • the periphery of the diaphragm 300 is suspended, which can release residual stress, so that the diaphragm 300 has higher sensitivity.
  • the diaphragm 300 is doped or ion implanted as necessary.
  • the doping may be N-type doping or P-type doping, so that the diaphragm 300 has better conductivity.
  • doping or ion implantation is also required to make the backplane have better conductivity.
  • a limiting layer 170 is disposed on the first insulating layer 120 on the side close to the back hole 112.
  • the limiting layer 170 is an etch stop layer, and can be made of the same material as the protective layer 220, for example, silicon nitride.
  • the removal position and the removal amount of the silicon oxide material in the first insulating layer 120 (also referred to as a sacrificial layer) can be accurately controlled to determine the etching end point .
  • the removal position and amount of the oxide silicon material in the first insulating layer 120 under the backplane 200 strict control of product performance can be achieved, for example, the rigidity of the backplane 200 can be controlled, and then Improve product yield.
  • the etching end point can be directly determined according to the position passing through the limiting layer 170, so that the above problem can be effectively solved.
  • the diaphragm 300 includes a plurality of diaphragms 330 that move independently of each other, as shown in FIG. 7.
  • the diaphragm 300 includes four symmetrically distributed diaphragms 330, and each diaphragm 330 has the same structure, that is, the same mass 310 is formed thereon.
  • the sensitivity during the vibration detection process can be further improved.
  • at least two of the diaphragms 330 on the diaphragm 300 have different structures, that is, they are asymmetrically distributed.
  • the masses 310 are provided on different diaphragms 330, and the masses 310 on each diaphragm 330 may be the same or different. It is set to the frequency detection range corresponding to the diaphragm 330, for example, the frequency detection range is 20Hz ⁇ 20KHz
  • the diaphragm 300 may be provided with a first diaphragm corresponding to a low frequency, a second diaphragm corresponding to an intermediate frequency and a third diaphragm corresponding to a high frequency, so that the first diaphragm can be used to realize Low frequency detection 100Hz ⁇ 1KHz frequency detection, the second module to achieve 1KHz ⁇ 10KHz frequency detection, and the third diaphragm to achieve 10KHz ⁇ 20KHz frequency detection.
  • different diaphragms 330 correspond to different frequency bands, so that the MEMS sound sensor has a wider frequency band detection range, and meets the user's detection requirements for multiple frequency bands.
  • an insulating layer is provided between the diaphragms 330 to achieve electrical insulation between the diaphragms 330, so that the diaphragms 330 can independently detect sounds in corresponding frequency bands.
  • Each diaphragm 330 is led out to the corresponding diaphragm extraction electrode 150 on the back plate 200 through the connecting post 400 to be connected to the corresponding pad through the diaphragm extraction electrode 150.
  • the connecting post 400 also includes a plurality of mutually insulated lead-out areas, and a plurality of diaphragm lead-out electrodes 150 are also provided in the back plate 200 to lead each diaphragm 330 to the corresponding pad, that is, at this time
  • Each diaphragm 330 has mutually independent circuit paths.
  • each diaphragm 330 may also be led out using the same circuit path.
  • the membrane 330 responsible for sensing the corresponding frequency band forms a capacitance with the backplane to generate a variable capacitance change signal, so that the ASIC chip processes the change signal accordingly.
  • the capacitance change signal is small, and the ASIC does not process it at this time.
  • the first end 400a of the connecting post 400 and the diaphragm 300 are integrally formed, so there is no impedance problem, so there is no need to add a corresponding impedance matching structure, and the overall conductive performance is better. Moreover, the two are formed integrally so that the diaphragm 300 and the connecting post 400 have a more reliable connection relationship, enough to resist external mechanical impact.
  • part of the material of the second end 400b is embedded in the first conductive layer 210 of the backplane 200.
  • the second end 400b is electrically connected to the diaphragm extraction region in the first conductive layer 210 in the backplane 200, so that the connecting post 400 can lead out the electrode where the diaphragm 300 is located through the diaphragm extraction region.
  • At least partial material embedding of the second end 400b means that a part of the layer structure on the connecting pillar 400 is embedded in the first conductive layer 210 or all layer structures on the connecting pillar 400 are embedded in the first conductive layer 210.
  • the connection pillar 400 may be embedded inside the first conductive layer 210 or embedded in and penetrate the first conductive layer 210.
  • the second end 400b of the connecting pillar 400 may be partially not embedded, but partially embedded in the first conductive layer 210 or embedded and penetrate the first conductive layer 210.
  • the second ends 400b of the connecting pillar 400 may all be embedded, but partially embedded in the first conductive layer 210, and the rest are embedded in and penetrate the first conductive layer 210.
  • the second end 400b of the connecting post 400 may also be embedded in the first conductive layer 210 or may be embedded in and penetrate the first conductive layer 210.
  • the shape, structure, and number of the connecting posts 400 are not particularly limited.
  • the cross section of the connecting column 400 may be circular, rectangular, elliptical, semicircular, etc., as long as it can play a role of supporting and hanging.
  • the connection column 400 is cylindrical as an example.
  • the number of connecting posts 400 may be one or two or more.
  • the number of the connecting posts 400 can also be determined according to the size of the MEMS sound sensor, for example, as the size of the MEMS sound sensor increases, the number of the connecting posts 400 is increased or the cross-sectional area of the connecting posts 400 is adjusted.
  • the connecting post 400 is fixedly supported on the back plate 200 by embedding the back plate 200. Since the connecting post 400 is embedded in the backplane 200, the connecting post 400 has a vertical joint area and a horizontal joint area with the backplane 200, that is, the joint area between the connecting post 400 and the backplane 200 is increased, and it has better mechanical properties.
  • the connection strength can improve the performance of the vibration resistance of the diaphragm 300 against blowing and falling, rolling, roller testing, and the like.
  • the mechanical sensitivity of the diaphragm is susceptible to the residual stress of the semiconductor process.
  • Individual MEMS sound sensors are prone to variability, resulting in decreased sensitivity consistency, and even uneven distribution of diaphragm stress, causing instability (bi- The possibility of deformation occurs, which makes the final MEMS microphone acoustic performance unstable, even exceeding the specifications.
  • the MEMS sound sensor in this application can have high mechanical strength and can improve the resistance to various mechanical impact forces.
  • the suspension type is used to strengthen the connection strength of the connecting column 400 and the back plate 200, so that the diaphragm 300 can freely Complying with the external mechanical impact force, the diaphragm 300 becomes a flexible diaphragm and does not resist the external mechanical impact force.
  • the diaphragm 300 in this application has no peripheral fixed points or fixed points (diaphragm), which means that the periphery of the diaphragm is completely cut.
  • This design can release the residual stress caused by the semiconductor process and greatly improve the performance of the MEMS sound sensor. Performance and manufacturability, relax manufacturing tolerance tolerance of manufacturing, and make manufacturing yield higher.
  • some spring-like connection structures may also be provided around the diaphragm 300 to connect with the substrate 110. It can be understood that the structure in which the connecting post 400 in this embodiment is embedded in the back plate 200 to fix and support the diaphragm 300 on the back plate 200 is not limited to the structure shown in FIG. 1, and can also be applied to other structures such as having a double back plate or MEMS sound sensor with double diaphragm.
  • the connecting post 400 is located at the center of the diaphragm 300.
  • the diaphragm 300 is circular
  • the connecting post 400 is a cylinder, that is, the central axis of the connecting post 400 intersects the center of the diaphragm 300.
  • the plurality of connecting posts 400 are symmetrically distributed about the center of the diaphragm 300, so that the force of the diaphragm 300 is uniform everywhere.
  • the plurality of connecting posts 400 are all disposed within a half of the distance from the center of the diaphragm 300 to the edge, so as to ensure that the diaphragm 300 has better support performance and that the diaphragm 300 has Higher sensitivity.
  • the depth of the first conductive layer 210 embedded in the connecting pillar 400 is greater than or equal to one-third of the thickness of the first conductive layer 210, so that the connecting pillar 400 has a vertical bonding area and a horizontal bonding with the backplane 200
  • the area, that is, the joint area between the connecting post 400 and the backing plate 200 is increased, so as to ensure that the backing plate 200 and the connecting post 400 are more resistant to external mechanical shocks, and meet the anti-blow and anti-drop of the diaphragm 300 , Rolling and roller testing and other mechanical impact strength performance requirements.
  • the connection pillar 400 includes a third insulating layer 410 and a second conductive layer 420 that are spaced apart from each other. Since the connecting pillar 400 is a cylinder, the shapes of the third insulating layer 410 and the second conductive layer 420 projected on the back plate 200, that is, their top views are all ring-shaped structures. The number of layers of the third insulating layer 410 and the second conductive layer 420 can be set as needed, usually from the center of the connecting post 400 are the third insulating layer 410, the second conductive layer 420, the third insulating layer 410... until the most The second conductive layer 420 of the outer layer. In the embodiment shown in FIG.
  • the second conductive layer 420 and the third insulating layer 410 are both two layers.
  • the third insulating layer 410 is prepared in the same process as the second insulating layer 130 above the substrate 110 during the preparation.
  • the second insulating layer 130 is named as the second insulating layer 130 and the second Three insulating layer 410. Therefore, the materials of the second insulating layer 130 and the third insulating layer 410 are the same, and both are dielectric oxide layers.
  • the first end of the second conductive layer 420 is integrally formed with the diaphragm 300 and electrically connected.
  • the second end of the second conductive layer 420 is embedded in the first conductive layer 210.
  • the second end of the second conductive layer 420 may be embedded inside the first conductive layer 210, or may be embedded in and penetrate the first conductive layer 210.
  • the materials of the diaphragm 300, the second conductive layer 420, and the first conductive layer 210 are the same, for example, all are polysilicon.
  • the second conductive layer 420 is embedded in the first conductive layer 210, it is an embedding of the same material, which will not cause an impedance problem, so that no additional impedance matching structure needs to be added, and the overall conductive performance is better.
  • the second conductive layer 420 may include two types, that is, a first type conductive layer and a second type conductive layer. Wherein, the second end of the first type conductive layer is embedded in the first conductive layer 210, and its embedding depth is greater than or equal to one third of the thickness of the first conductive layer 210 and less than the thickness of the first conductive layer 210. The second end of the second type conductive layer is embedded in and penetrates the entire first conductive layer 210.
  • the second conductive layers 420 in the connection pillar 400 may all be the first type conductive layers or all the second type conductive layers. It can be understood that the second conductive layer 420 in the connecting pillar 400 may also include the first type conductive layer and the second type conductive layer at the same time. In FIG. 1, the second conductive layers 420 are all second-type conductive layers.
  • the third insulating layer 410 can also be embedded inside the first conductive layer 210, thereby further increasing the bonding area of the connecting post 400 and the backplane 200, and improving the mechanical strength of the connecting post 400 connecting the backplane 200.
  • the third insulating layer 410 does not embed and penetrate the first conductive layer 210, that is, the embedded depth of the third insulating layer 410 is greater than one third of the thickness of the first conductive layer 210 and less than the thickness of the first conductive layer 210.
  • the third insulating layer 410 When the third insulating layer 410 is embedded in and penetrates the first conductive layer 210, when the first insulating layer 120 (for example, silicon dioxide) is released, the material of the third insulating layer 410 will be attacked, causing penetration through the back The material of the third insulating layer 410 of the board 200 is etched and does not exist.
  • the first insulating layer 120 for example, silicon dioxide
  • a protrusion 240 is formed on the side of the back plate 200 away from the diaphragm 300.
  • the protrusion 240 is integrally formed with the back plate 200, that is, the two are an integral structure.
  • the second-type conductive layer on the connecting post 400 extends into the protrusion 240, thereby further increasing the joint area of the connecting post 400 and the back plate 200, and improving the mechanical strength of the diaphragm 300 connection.
  • the second type conductive layer extends into the protrusion 240.
  • the protrusion 240 wraps the portion of the second type conductive layer that extends into this area.
  • the protrusion 240 has a full-face structure from a bottom view.
  • the protrusion 240 may also have a hollow square structure or a full-surface structure.
  • the thickness of the protrusion 240 may not be limited.
  • the first insulating layer 120 is first formed on the substrate 110 and then the first conductive layer 210 is formed on the first insulating layer 120. If the protrusion 240 needs to be formed, the first insulating layer 120 needs to be etched before the first conductive layer 210 is formed to form a corresponding groove structure, and then a whole layer of conductive layer structure is formed above the first insulating layer 120 , Thereby forming the first conductive layer 210 having the raised structure.
  • the rigidity of the back plate 200 can be improved to a certain extent.
  • the connecting post 400 further includes a bearing portion (not shown).
  • the bearing portion is connected to the side of the back plate 200 away from the diaphragm 300.
  • the bearing portion is connected to at least a part of the second-type conductive layer in the connecting post 400 to form a rivet structure.
  • the connection column 400 embedded in the back plate 200 can provide a horizontal force to fix the diaphragm 300, and the increase of the bearing portion 430 can increase the horizontal contact area with the back plate 200, which can increase the vertical direction
  • the supporting force makes the supporting force in two directions, so that the supporting strength of the connecting column 400 is stronger, and the stability of the diaphragm 300 is better.
  • the edge of the second conductive layer 420 in the connecting post 400 is located in the edge of the bearing portion, so there can be a greater tolerance of alignment errors during the preparation process, the process is better, and there will be no cracking Or the etching is difficult to align.
  • the above MEMS sound sensor can be used as an acceleration sensor to detect acceleration.
  • the external force acting on the mass 310 can be detected according to the capacitance change of the MEMS sound sensor, so that the current acceleration can be calculated according to the mass of the mass 310.
  • the MEMS sound sensor can be multi-functionalized, and has a simpler structure than the conventional comb-shaped acceleration sensor, and the diaphragm 300 and the back plate 200 are the entire surface Structure, with extremely high capacitance.
  • An embodiment of the present application further provides a MEMS microphone, as shown in FIG. 8.
  • the MEMS microphone includes a printed circuit board 610 and a MEMS sound sensor 620 and an integrated circuit 630 provided on the printed circuit board 610.
  • the integrated circuit 630 may also be called an ASIC chip.
  • the MEMS sound sensor 620 uses the MEMS microphone described in any of the foregoing embodiments. This case does not specifically limit the structure of the MEMS microphone.
  • the MEMS microphone is packaged using a flip chip, that is, both the MEMS sound sensor 620 and the integrated circuit 630 are integrated on the printed circuit board 610 using a flip chip process.
  • the MEMS sound sensor 620 and the integrated circuit 630 are directly connected to the pads on the printed circuit board 610 by not bonding wires.
  • the MEMS sound sensor 620 and the integrated circuit 630 are connected to the printed circuit board 610 through the solder ball 640, so as to realize the electrical connection between the MEMS sound sensor 620 and the integrated circuit 630 and the printed circuit board 610.
  • the noise problem caused by wire bonding can be avoided, so that the entire MEMS microphone has a high signal-noise ratio (SNR).
  • SNR signal-noise ratio
  • the above-mentioned MEMS microphone also includes a package case 650.
  • the package case 650 and the printed circuit board 610 cooperate with each other to form a receiving space for receiving the MEMS sound sensor 620 and the integrated circuit 630.
  • neither the package case 650 nor the printed circuit board 610 is provided with a through hole for air flow to pass through.
  • the above-mentioned MEMS microphone is used for detecting sound and converting it into an electrical signal output by detecting vibration of bones (such as ear bones) or solid substances caused during speech.
  • the side where the printed circuit board 610 is located is close to the ear bones or other solid substances, so that the diaphragm 300 is very close to the vibration source (the arrows in FIG. 8 to FIG. 10 indicate the vibration source), the entire conduction path is short, Greatly enhance the effectiveness of the sensor signal under the flip-chip structure, so that the MEMS microphone has a higher signal-to-noise ratio.
  • a perforation 652 for the airflow to pass through may also be provided in the area of the package housing 650 near the MEMS sound sensor 620, as shown in FIG. 9.
  • a through hole 612 may also be directly formed on the printed circuit board 610, as shown in FIG.
  • the MEMS sound sensor 620 in the MEMS microphone can perform sound detection according to the change in capacitance caused by the change in sound pressure or air pressure, and can also perform sound detection according to the change in capacitance caused by vibration.
  • the integrated circuit 630 may process the detected signal according to a preset algorithm and output it.
  • An embodiment of the present application further provides an electronic device, including a device body and a MEMS microphone provided on the device body.
  • the MEMS microphone is prepared by using the MEMS sound sensor described in any of the foregoing embodiments.
  • the electronic device may be a mobile phone, digital camera, notebook computer, personal digital assistant, MP3 player, hearing aid, TV, telephone, conference system, wired headset, wireless headset, voice recorder, recording device, wire controller, etc.

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Abstract

一种MEMS声音传感器，用于通过空气声压变化和机械振动中的至少一种来检测声音，MEMS声音传感器包括：基板，基板上形成有背洞；背板，设置于基板上方，且部分区域被所述背洞所裸露；振膜，与背板相对设置且与背板之间存在间隙；振膜与背板构成电容结构；以及连接柱，包括相对设置的第一端和第二端；连接柱的第一端与振膜的中间区域电性连接；连接柱的第二端与背板固定连接；以将振膜固定支撑在背板上；其中，振膜的边缘区域设置有至少一个质量块；质量块与背板之间存在间隙。

Description

MEMS声音传感器、MEMS麦克风及电子设备 技术领域
本发明涉及麦克风技术领域，特别是涉及一种MEMS声音传感器及其制备方法、MEMS麦克风及电子设备。
背景技术
MEMS(Micro-Electro-Mechanical System，微机电系统)麦克风是基于MEMS技术制造的电能换声器，具有体积小、频响特性好以及噪声低等优点。随着电子设备的小型化发展，MEMS麦克风被越来越广泛地运用到这些设备上。MEMS声音传感器是MEMS麦克风中的关键器件，其性能直接影响整个MEMS麦克风的性能。传统的MEMS声音传感器的灵敏度较低，无法满足用户的使用需求。
发明内容
根据本申请的各种实施例，提供一种MEMS声音传感器、MEMS麦克风及电子设备。
一种MEMS声音传感器，用于通过空气声压变化和机械振动中的至少一种来检测声音，所述MEMS声音传感器包括：
基板，所述基板上形成有背洞；
背板，设置于所述基板上方，且部分区域被所述背洞所裸露；
振膜，与所述背板相对设置且与所述背板之间存在间隙；所述振膜与所述背板构成电容结构；以及
连接柱，包括相对设置的第一端和第二端；所述连接柱的第一端与所述振膜的中间区域电性连接；所述连接柱的第二端与所述背板固定连接；以将所述振膜固定支撑在所述背板上；
其中，所述振膜的边缘区域设置有至少一个质量块；所述质量块与所述 背板之间存在间隙。
一种MEMS麦克风，包括印刷电路板、设置于所述印刷电路板上的MEMS声音传感器和设置于所述印刷电路板上的集成电路；所述MEMS麦克风采用如前述任一实施例所述的MEMS声音传感器。
一种电子设备，包括设备本体以及设置在所述设备本体上的MEMS麦克风；所述MEMS麦克风采用如前所述的MEMS麦克风。
本申请的一个或多个实施例的细节在下面的附图和描述中提出。本申请的其他特征、目的和优点将从说明书、附图以及权利要求书变得明显。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他实施例的附图。
图1为第一实施例中的MEMS声音传感器的剖视图。
图2为第二实施例中的MEMS声音传感器的剖视图。
图3为第三实施例中的MEMS声音传感器的剖视图。
图4为第四实施例中的MEMS声音传感器的剖视图。
图5为第五实施例中的MEMS声音传感器的剖视图。
图6为第六实施例中的MEMS声音传感器的剖视图。
图7为一实施例中的振膜的结构示意图。
图8为一实施例中的MEMS麦克风的结构示意图。
图9为另一实施例中的MEMS麦克风的结构示意图。
图10为又一实施例中的MEMS麦克风的结构示意图。
具体实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及 实施例，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”以及“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，需要说明的是，当元件被称为“形成在另一元件上”时，它可以直接连接到另一元件上或者可能同时存在居中元件。当一个元件被认为是“连接”另一个元件，它可以直接连接到另一元件或者同时存在居中元件。相反，当元件被称作“直接在”另一元件“上”时，不存在中间元件。
图1为一实施例中的MEMS声音传感器的结构示意图。该MEMS声音传感器也可以称之为MEMS传感器或者MEMS芯片。该MEMS声音传感器用于通过空气声压变化和机械振动中的至少一种来检测声音,也即该MEMS声音传感器可以对声音所引起的空气气压变化进行检测来实现声音检测，也可以通过对声音或者机械外力所引起的振动来实现声音检测。可以理解，本案中所指的振动以由于声音或者机械外力所引起的骨头比如耳骨或者其他固体的振动为例。
该MEMS声音传感器包括基板110、背板200、振膜300和连接柱400。其中，基板110上形成有背洞112。背板200也可以称之为背极板。背板200设置在基板110的上方，并通过基板110进行固定。并且基板110的部分区域被背洞112所裸露。振膜300与背板200相对设置，振膜300设置在背板200上远离基板110的一侧。振膜300与背板200之间形成有间隙10。间隙10内并不填充其他物质，为空气间隙。振膜300与背板200构成电容结构。在本实施例中，并不对振膜300的形状进行特别限定。例如，振膜300可以为圆形、方形等形状。
连接柱400包括相对设置的第一端400a和第二端400b。其中，第一端 400a与振膜300的中间区域连接，且与振膜300电性连接。第二端400b与背板200固定连接。连接柱400通过第二端400b与背板200连接，从而将振膜300固定支撑于背板200上。通过连接柱400将振膜300固定支撑在背板200上，从而使得振膜300四周的边缘区域无需其他固定结构来对其进行支撑固定，也即振膜300的边缘区域与整个MEMS传感器中的其他结构完全分离，从而可以较大程度提高整个振膜300的灵敏度，满足人们的使用需求。在本实施例中，振膜300的边缘区域设置有至少一个质量块310。在本案中，边缘区域是相对于中间区域而言的，也即边缘区域为远离连接柱400的区域。其中，质量块310与背板200之间存在间隙d，从而使得外部气流可以通过该间隙进入到振膜300和背板200之间的间隙10中。
当声音引起空气气压变化时，空气会经过质量块310与背板200之间的间隙d进入到背板200和振膜300之间的孔隙10中，从而使得振膜300在该气压或者声压的作用下发生振动，或者振膜300下方气压变化直接推动振膜200使得振膜200发生振动，进而使得电容结构产生变化的电容，实现对声波的探测。可以通过ASIC(Application Specific Integrated Circuit，集成电路)芯片对该变化的电容信号进行处理并输出声电转换后的电信号。当气压或者声压引起振膜300的振动时，由于振膜300的边缘区域设置有质量块310，即便是较小气压变化也能够产生较大的力矩，从而使得振膜300产生较为明显的振动，极大地提高了MEMS声音传感器的灵敏度。其中，质量块310与背板200之间的间隙d可以根据需要进行设置，以尽可能降低空气进出间隙10时存在的阻尼效应，并确保质量块310与背板200之间不容易因为静电或者外力出现粘接问题。
当MEMS声音传感器与传导声音的骨头(比如耳骨、声带等)直接或者间接接触(通常是振膜300所在一侧靠近耳骨)时，由于说话过程中相应的骨头会发生机械振动，该机械振动会引起振膜300发生振动。由于振膜300的边缘区域设置有质量块310，从而即便是较小的机械振动也能够引起振膜300的振动，实现对该声音的检测，也即该MEMS声音传感器具有较高的灵敏度。 本实施例中的MEMS声音传感器能够作为振动传感器工作，从而在用户处于嘈杂环境中时，可以将其与人体的声音传导组织(如耳骨)进行接触，通过检测人说话时引起的固态物质的振动实现对声音的检测，整个检测过程中不会受到环境噪声的干扰，使得整个MEMS声音传感器具有较高的信噪比。
上述MEMS声音传感器，由于空气可以直接由质量块310与背板200之间的间隙d进入引起振膜300的振动或者由机械振动引起振膜300的振动，因此背板200以及振膜300上均可以不开设声孔，从而使得背板200中的电极面积较大，确保MEMS声音传感器具有高电容变化，进一步提高了检测过程的灵敏度。同时，通过采用本实施例中的MEMS声音传感器的结构，背板200上无需被切断来释放质量块310，从而使得背板200具有整面结构，进而使得整个MEMS声音传感器具有较高电容变化。再者，振膜300覆盖背板200的有效区域，同样为整面结构，具有较大的面积，从而使得可以形成质量较大的质量块310，并使得整个MEMS声音传感器具有较高的电容变化。
在一实施例中，背板200上开设有声孔230，如图1所示。通过在背板200上开设声孔230，气流可以通过声孔230进入到间隙10中，以降低阻尼效应。在本实施例中，声孔230设置在背板200上靠近连接柱400的区域，质量块310所在区域下方未开设声孔230。在一实施例中，声孔230也可以设置在靠近质量块310的区域，如图2所示。可以理解，声孔230也可以设置在整个背板200上裸露于背洞112的区域，如图3所示。图4为另一实施例中的MEMS声音传感器的剖视图，在本实施例中，背板200中未开设有声孔，而仅在振膜300上开设有声孔320。声孔320开设在振膜300上位于质量块310和连接柱400之间的区域。在其他的实施例中，背板200和振膜300上可以同时设置有声孔，如图5和图6所示。此时，背板200上无需整面开设声孔230。
在一实施例中，质量块310包括第一部分。第一部分形成于振膜300上朝向背板200的一面。第一部分上朝向振膜300的一面还设置有防粘连部330。防粘连部330与背板200之间存在有间隙d。在一实施例中，间隙d可以足 够小，从而使得由背板200和振膜300所形成的电容结构具有高电容变化，进而使得MEMS声音传感器具有非常高的灵敏度。具体地，防粘连部330可以为凸起结构，如图1所示。第一部分、防粘连部330与振膜300所在的材料层在同一工艺步骤中形成后通过刻蚀工艺形成第一部分以及防粘连部330，也即第一部分、防粘连部330与振膜300的材料相同且为一体结构。
在一实施例中，质量块310还可以包括第二部分(图中未示)。第二部分形成于振膜300上远离背板200的一面，也即与第一部分相对设置。通过增加第二部分可以得到质量更大的质量块，以提高灵敏度。第二部分可以在振膜300形成后，通过额外的曝光、显影以及刻蚀工序形成在振膜300上。第二部分和振膜300具有相同的材料，并与振膜300形成一个整体结构。
质量块310的质量可以调整，从而实现对整个质量块310的质量调整，进而实现对整个MEMS振动传感器的感应频段的调整。在本实施例中，MEMS声音传感器的频率检测范围为20Hz～20KHz。
在一实施例中，基板110可以直接为硅衬底。可以理解，基板110也还可以为其他基底结构，比如SOI基底。在本实施例中，背板200包括第一导电层210和保护层220。其中，第一导电层210通过第一绝缘层120与基板110连接。第一导电层210为图形化层(图中未示)，以形成背板电极以及振膜的电极引出区域。第一绝缘层120可以为介电氧化层，比如采用二氧化硅等。保护层220包覆第一导电层210，如图1所示。保护层220为钝化层，通过将第一导电层210进行包覆，可以确保被包覆的第一导电层210空气中的腐蚀性气体隔离，并且可以避免在不良环境如潮湿环境下的背板200和振膜300之间的漏电。保护层220可以采用氮化硅(silicon nitride)、富硅氮化硅(si-rich silicon nitride)。在一实施例中，保护层220表面必须是或者处理成非亲水性，也即保护层220的表面均为非亲水性表面。例如若有很薄的氧化硅材料没有完全被移除干净，因而附在保护层上，也会造成保护层具亲水性(hydrophilic)；或者是保护层氮化硅(silicon nitride)、富硅氮化硅(si-rich silicon nitride)本身半导体工艺完毕后，还是具有一 定程度的亲水性，这时候我们可以对MEMS传感器做防粘涂料(anti-stiction coating)，改变保护层表面特性，使其变成非亲水表面。
在本实施例中，第一导电层210为图形化的导电层。第一导电层210可以为多晶硅层、硅锗化合物(SiGe)层或者金属层。其中，金属层的金属可以为铝(Al)、铝铜合金(AlCu)、铂(Pt)以及金(Au)等。在本实施例中，第一导电层210和振膜300的材料均为多晶硅(poly Si)。具体地，第一导电层210包括彼此分开的背板电极和振膜引出区(图中未示)。背板电极作为电容的一个电极，振膜300作为电容的另外一个电极，二者形成电容结构。振膜引出区与连接柱400的第二端400b连接，以将振膜300所在的电极引出。此时，MEMS声音传感器还包括第二绝缘层130、背板电极引出电极140和振膜引出电极150。第二绝缘层130设置于第一导电层210上。第二绝缘层130和第一绝缘层120均可以为介电氧化层，比如采用二氧化硅制备得到。背板电极引出电极140形成在第二绝缘层130上，并且贯穿整个第二绝缘层130后与第一导电层210中的背板电极连接，以将背板电极引出。振膜引出电极150同样形成在第二绝缘层130上，且贯穿整个第二绝缘层130后与第二导电层210中的振膜引出区连接。在本实施例中，上述MEMS声音传感器上还形成有背板焊盘162和振膜焊盘164，如图1所示。背板焊盘162形成在背板引出电极140上，振膜焊盘164形成在振膜引出电极150上，分别实现背板电极、振膜300与外部的电气连接。
在一实施例中，振膜300、质量块310、背板电极引出电极140、振膜引出电极150以及连接柱400中的导电层所在的材料层均在同一工艺步骤中形成，也即振膜300、质量块310、背板电极引出电极140、振膜引出电极150以及连接柱400中的导电层的材料相同。在本实施例中，振膜300、质量块310、背板电极引出电极140、振膜引出电极150以及连接柱400中的导电层均通同一多晶硅沉积制程步骤形成。具体地，先在背板200上形成第二绝缘层130，然后对第二绝缘层130进行刻蚀形成对应于背板电极引出电极140、振膜引出电极150以及连接柱400的贯穿区域后，在整个表面进行材料填充， 形成一个整的材料层。由于需要填充前面刻蚀的槽洞，此时形成的导电层的厚度较厚，此时需要用CMP(Chemical Mechanical Polishing process,机械化学研磨制程)或者硅刻蚀制程把形成的导电层如多晶硅材料层刻蚀到想要的振膜300的厚度。接下来再对材料层进行刻蚀，从而形成相互独立的振膜300、背板电极引出电极140以及振膜引出电极150。在一实施例中，振膜300可以此采用单晶珪、多晶硅、氮化硅、富硅氮化硅、硅锗化合物(SiGe)或者金属等。其中，金属可以为铝(Al)、铝铜合金(AlCu)、铂(Pt)以及金(Au)等。因此，材料层也可以采用前述任意一种材料。当振膜300采用氮化硅或者富硅氮化硅作为材料时，还需要在表面加一层导电材料当做振膜300的电极。在本实施例中，振膜300的边缘区域与整个MEMS声音传感器的其他区域完全隔离，也即振膜300完全由连接柱400进行固定支撑，而无需借用其他的固定结构对振膜300的周边进行固定。振膜300的周边都是悬空的，可以释放残余应力，从而使得振膜300具有较高的灵敏度。在一实施例中，振膜300进行了必要的掺杂或者离子注入。掺杂可以为N型掺杂也可以为P型掺杂，从而使得振膜300具有较好的导电性能。在一实施例中，当背板200中的导电层采用多晶硅或者硅锗化合物时，同样需要掺杂或者离子注入(doping or ion implantation)，使得背板具有较好的导电性能。
在一实施例中，第一绝缘层120上靠近背洞112的一侧设置有限位层170。限位层170为刻蚀阻挡层，可以采用与保护层220相同的材料制备而成，比如均采用氮化硅。通过设置限位层170可以准确控制背板200下方材料层，也即第一绝缘层120(也可以称之为牺牲层)中氧化珪材料的移除位置和移除量，来确定刻蚀终点。通过对控制背板200下方第一绝缘层120中氧化珪材料的移除位置和移除量进行精准控制，可以实现对产品性能的严格控制，比如实现对背板200的刚性的控制，进而可以提升产品良率。传统的背洞刻蚀过程中，通常需要对刻蚀时间进行控制来控制刻蚀终点，这个过程具有较多的可变和影响因素，从而导致最终制备得到的产品性能无法满足使用需求。在本案中，刻蚀终点可以直接根据通过限位层170的位置来确定，从而可以 有效解决上述问题。
在一实施例中，振膜300包括多个相互独立运动的膜片330，如图7所示。在本实施例中，振膜300包括四个对称分布的膜片330，并且每个膜片330具有相同的结构，也即其上形成有相同的质量块310。通过将振膜300设置为多个独立运动的膜片330，可以进一步提高振动检测过程中的灵敏度。在一实施例中，振膜300上的各膜片330至少两个具有不同的结构，也即为不对称分布。此时，不同膜片330上均设置有质量块310，每个膜片330上的质量块310可以相同也可以不同，其被设置到对应于膜片330的频率检测范围，比如频率检测范围为20Hz～20KHz例如，可以在振膜300中设置有对应于低频的第一膜片、对应于中频的第二膜片以及对应于高频的第三膜片，从而可以利用第一膜片来实现低频检测100Hz～1KHz的频率检测，第二模块来实现1KHz～10KHz的频率检测，而第三膜片则实现10KHz～20KHz的频率检测。在其他的实施例中，不同的膜片330对应于不同的频段，从而使得MEMS声音传感器具有较宽的频段检测范围，实现满足用户对多频段的检测需求。
在一实施例中，各膜片330之间设置有绝缘层以实现各膜片330之间的电性绝缘，使得各膜片330能够相互独立对相应频段的声音进行检测。各膜片330均通过连接柱400引出至背板200上的对应的振膜引出电极150中，以通过振膜引出电极150连接至相应的焊盘。此时连接柱400中同样包括多个相互电性绝缘的引出区域，背板200中也设置有多个振膜引出电极150以将每个膜片330引出至相应的焊盘，也即此时各膜片330具有相互独立的电路路径。在其他的实施例中，各膜片330也可以采用同一电路路径进行引出。此情況下，负责感测对应频率波段的膜片330与背板形成电容，产生变容变化讯号，从而由ASIC芯片相应去处理该变化讯号。其他频率波段的膜片330，电容变化讯号较小，ASIC此时不去处理。
在一实施例中，连接柱400的第一端400a与振膜300是一体形成的，因此不会带来阻抗问题，从而无需额外增加相应的阻抗匹配结构，整体的导电性能较好。并且，二者一体形成使得振膜300与连接柱400之间具有较为可 靠的连接关系，足够抵抗外部机械冲击。
在一实施例中，第二端400b的部分材料嵌入背板200的第一导电层210中。第二端400b与背板200中的第一导电层210中的振膜引出区电性连接，从而使得连接柱400可以通过该振膜引出区将振膜300所在电极进行引出。第二端400b至少部分的材料嵌入是指连接柱400上部分的层体结构嵌入第一导电层210中或者连接柱400上所有的层体结构都嵌入第一导电层210中。在本实施例中，连接柱400可以嵌入第一导电层210内部或者嵌入并贯穿第一导电层210。因此，连接柱400的第二端400b可以部分不进行嵌入，而部分嵌入第一导电层210内或者嵌入并贯穿第一导电层210。连接柱400的第二端400b还可以全部均进行嵌入，但是部分嵌入第一导电层210内，其余则嵌入并贯穿第一导电层210。可以理解，连接柱400的第二端400b也可以全部嵌入第一导电层210内或者全部嵌入并贯穿第一导电层210。在本实施例中，连接柱400的形状、结构和数目均不作特别限定。例如，连接柱400的横截面可以为圆形、矩形、椭圆形、半圆等，只要其能够起到支撑悬挂作用即可。在本案中均以连接柱400为圆柱形为例进行说明。连接柱400的数目可以一个也可以为两个以上。连接柱400的数目也可以根据MEMS声音传感器的尺寸进行确定，比如随着MEMS声音传感器的尺寸的增大相应的增加连接柱400的数目或者调整连接柱400的横截面积等。
上述MEMS声音传感器，连接柱400采用嵌入背板200的方式将振膜300固定支撑在背板200上。由于将连接柱400嵌入背板200，使得连接柱400具有与背板200的垂直接合面积和水平接合面积，也即增加了连接柱400与背板200之间的接合面积，具有较好的机械连接强度，从而可以提高振膜300的抗吹击与抗跌落、滚动、滚筒测试等机械冲击力量的性能。并且，振膜300四周无需其他固定结构来对其进行支撑固定，从而可以较大程度提高整个振膜300的灵敏度，满足人们的使用需求。
传统的MEMS声音传感器，其振膜机械灵敏度易受半导体工艺残留应力影响，个别MEMS声音传感器容易有变异的情况，造成灵敏度一致性下降，甚至 有振膜应力分布不均，造成不稳定(bi-stable)形变的可能性产生，使得最终MEMS麦克风声学性能在使用上有不稳定的情况，甚至超出规格。本申请中的MEMS声音传感器能有较高的机械强度，能够提升抗各种机械冲击力量的能力，利用悬吊式并强化连接柱400与背板200的结合强度，使振膜300能够自由地顺应外界的机械冲击力量，使振膜300成为一种柔性振膜(compliance diaphragm)，不与外界机械冲击力量抵抗。并且本申请中的振膜300无外围的固定点或者固支点(diaphragm anchor)，也即振膜外围全部切开，此设计可使半导体工艺造成的残留应力释放，大大提高MEMS声音传感器的性能一致性与可生产制造性，放宽生产制造的制造公差容忍度，使生产制造良率更高。在其他的实施例中，也可以在振膜300的周边设置一些类似弹簧的连接结构，与基板110进行连接。可以理解，本实施例中的连接柱400嵌入背板200从而将振膜300固定支撑在背板200的结构并不限于图1所示的结构中，还可以适用于其他比如具有双背板或者双振膜的MEMS声音传感器中。
在一实施例中，连接柱400为一个。具体地，连接柱400位于振膜300的中心。其中，振膜300为圆形，连接柱400为圆柱，也即连接柱400的中心轴与振膜300的圆心相交。通过将连接柱400设置成关于振膜300的中心对称，可以使得声压从振膜300的边缘区域进入间隙10后能够产生最对称的压力作用在振膜300上，以提高振膜300的灵敏度。
在一实施例中，连接柱400可以为多个。多个连接柱400关于振膜300的中心对称分布，从而使得振膜300的各处受力均匀。例如，连接柱400可以为四个，对称分布在振膜300的中心四周。在一实施例中，多个连接柱400均设置在振膜300的中心至边缘的距离的二分之一区域以内，从而确保对振膜300起到较好的支撑性能并确保振膜300具有较高的灵敏度。
在一实施例中，连接柱400中嵌入第一导电层210的深度大于或等于第一导电层210的厚度的三分之一，使得连接柱400具有与背板200的垂直接合面积和水平接合面积，也即增加了连接柱400与背板200之间的接合面积，从而确保背板200与连接柱400之间抵抗外界机械冲击的能力更强，满足振 膜300的抗吹击与抗跌落、滚动以及滚筒测试等机械冲击力量的性能要求。
参见图1，在本实施例中，连接柱400包括相互间隔设置的第三绝缘层410和第二导电层420。由于连接柱400为圆柱，因此第三绝缘层410和第二导电层420投影在背板200上的形状也即其俯视图均为环形结构。第三绝缘层410和第二导电层420的层数可以根据需要设置，通常从连接柱400的中心起依次为第三绝缘层410、第二导电层420、第三绝缘层410……直至最外层的第二导电层420。在图1所示的实施例中，第二导电层420和第三绝缘层410均为两层。其中，第三绝缘层410在制备时与基板110上方的第二绝缘层130在同一道工序中进行制备得到，本实施例中仅仅是为了进行区分将其分别命名为第二绝缘层130和第三绝缘层410。因此，第二绝缘层130和第三绝缘层410的材料相同，均为介电氧化层。
第二导电层420的第一端与振膜300一体形成并电连接。第二导电层420的第二端嵌入第一导电层210。第二导电层420的第二端可以嵌入第一导电层210内部，也可以嵌入并贯穿第一导电层210。在本实施例中，振膜300、第二导电层420以及第一导电层210的材料相同，例如均为多晶硅。因此，第二导电层420嵌入第一导电层210时属于同种材料的嵌入，不会带来阻抗问题，从而无需额外增加相应的阻抗匹配结构，整体的导电性能较好。
第二导电层420可以包括两种类型，即包括第一类型导电层和第二类型导电层。其中，第一类型导电层的第二端嵌入到第一导电层210内，其嵌入深度大于或者等于第一导电层210的厚度的三分之一并小于第一导电层210的厚度。第二类型导电层的第二端则嵌入并贯穿整个第一导电层210。连接柱400中的第二导电层420可以全部为第一类型导电层也可以全部为第二类型导电层。可以理解，连接柱400中的第二导电层420也可同时包含有第一类型导电层和第二类型导电层。在图1中，第二导电层420均为第二类型导电层。
在一实施例中，第三绝缘层410同样可以嵌入第一导电层210内部，从而进一步增加连接柱400与背板200的接合面积，提高连接柱400连接背板 200的机械强度。第三绝缘层410并不会嵌入并贯穿第一导电层210，也即第三绝缘层410嵌入的深度大于第一导电层210的厚度的三分之一且小于第一导电层210的厚度。当第三绝缘层410嵌入并贯穿第一导电层210时，在释放第一绝缘层120(例如为二氧化硅时)的时候，就会攻击到第三绝缘层410的材料，会使贯穿背板200的第三绝缘层410的材料被蚀刻而不存在。
在一实施例中，背板200上远离振膜300的一面形成有凸起240。凸起240与背板200为一体形成，也即二者为一整体结构。连接柱400上的第二类型导电层会延伸至该凸起240内，从而进一步增加了连接柱400与背板200的接合面积，提高了振膜300连接的机械强度。第二类型导电层延伸至凸起240内。凸起240包裹住第二类型导电层延伸至该区域内的部分。在本实施例中，从仰视角度来看，凸起240为整面结构。在其他的实施例中，当连接柱400为方形时，凸起240也可以为中空的方形结构，或者整面结构。凸起240的厚度可以不做限制。在本案中，先在基板110上形成第一绝缘层120然后在第一绝缘层120上形成第一导电层210。如果需要形成凸起240，则需要在形成第一导电层210之前，先对第一绝缘层120进行刻蚀，形成对应的凹槽结构后在第一绝缘层120上方形成整层的导电层结构，从而在形成具有该凸起结构的第一导电层210。通过直接在背板200上形成凸起240可以在一定程度提高背板200的刚性。
在一实施例中，连接柱400还包括承载部(图中未示)。承载部与背板200上远离振膜300的一面连接。承载部至少与连接柱400中的部分第二类型导电层连接，形成铆钉结构。连接柱400嵌入背板200可以提供水平方向上的作用力以实现对振膜300的固定，而承载部430的增加可以增大与背板200的水平接触面积，可以增加在竖直方向上的支撑力，从而使得在两个方向上具有支撑力，使得连接柱400的支撑强度较强，振膜300的稳固性较好。在制备过程中，连接柱400中的第二导电层420的边缘位于承载部的边缘内，因此在制备过程中能有较大的对准误差容忍度，工艺比较好做，不会出现脱裂或者刻蚀难对准的问题。
在一实施例中，上述MEMS声音传感器可以作为加速度传感器，用来实现对加速度的检测。具体地，可以根据MEMS声音传感器的电容变化来实现对作用在质量块310上的外力的检测，从而根据质量块310的质量计算得到当前的加速度。通过上述MEMS声音传感器来作为加速度传感器，可以实现MEMS声音传感器的多功能化，并且具有相对于传统的梳齿状的加速度传感器更为简单的结构，且振膜300和背板200都是整面结构，具有极高的电容。
本申请一实施例还提供一种MEMS麦克风，如图8所示。该MEMS麦克风包括印刷电路板610以及设置在印刷电路板610上的MEMS声音传感器620和集成电路630。集成电路630也可以称之为ASIC芯片。其中，该MEMS声音传感器620采用前述任一实施例所述的MEMS麦克风。本案并不对MEMS麦克风的结构做特别限定。
在一实施例中，该MEMS麦克风采用倒装工艺(flip chip)进行封装，也即MEMS声音传感器620和集成电路630均采用倒装工艺集成在印刷电路板610上。具体地，MEMS声音传感器620和集成电路630通过不打线的方式直接与印制电路板610上的焊盘连接。比如在本案中，MEMS声音传感器620和集成电路630通过锡球640连接在印制电路板610上，从而实现MEMS声音传感器620和集成电路630与印制电路板610的电性连接。采用这种倒装工艺，可以避免由于引线接合所引起的噪声问题，从而使得整个MEMS麦克风具有较高的信噪比(Signal-Noise Ratio，SNR)。可以理解，为加强MEMS声音传感器620以及集成电路630与印制电路板610之间连接的稳固性，也可以增加其他的固定方式对其进一步进行固定，比如，采用封装胶来进行固定。
上述MEMS麦克风还包括封装壳体650。封装壳体650与印制电路板610相互配合形成用于容纳MEMS声音传感器620和集成电路630的容纳空间。在本实施例中，封装壳体650和印制电路板610上均未设置有供气流穿过的穿孔。此时，上述MEMS麦克风作为用于通过对说话过程中引起的骨头(如耳骨)或者固体物质的振动进行检测来实现对声音的检测并转换为电信号输出。此时，将印制电路板610所在的一侧靠近耳骨或者其他固体物质，从而使得振 膜300非常靠近振动源(图8～图10中，箭头表示振动源)，整个传导路径较短，极大地增强了在倒装结构下的传感信号的有效性，使得MEMS麦克风具有较高的信噪比。
在其他的实施例中，也可以在封装壳体650上靠近MEMS声音传感器620的区域设置用于供气流穿过的穿孔652,如图9所示。在其他的实施例中，也可以直接在印制电路板610上开设穿孔612，如图10所示。此时，MEMS麦克风中的MEMS声音传感器620即可根据声压或者气压变化引起的电容变化来进行声音检测，也可以根据振动所引起的电容变化来进行声音检测。集成电路630可以根据预设算法对检测到的信号进行处理后并输出。
本申请一实施例还提供一种电子设备，包括设备本体以及设置在设备本体上的MEMS麦克风。该MEMS麦克风采用前述任一实施例所述的MEMS声音传感器制备得到。该电子设备可以为手机、数码相机、笔记本电脑、个人数字助理、MP3播放器、助听器、电视、电话、会议系统、有线耳机、无线耳机、录音笔、录音设备、线控器等等。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (23)

  1. 一种MEMS声音传感器，用于通过空气声压变化和机械振动中的至少一种来检测声音，所述MEMS声音传感器包括：
    基板，所述基板上形成有背洞；
    背板，设置于所述基板上方，且部分区域被所述背洞所裸露；
    振膜，与所述背板相对设置且与所述背板之间存在间隙；所述振膜与所述背板构成电容结构；以及
    连接柱，包括相对设置的第一端和第二端；所述连接柱的第一端与所述振膜的中间区域电性连接；所述连接柱的第二端与所述背板固定连接；以将所述振膜固定支撑在所述背板上；
    其中，所述振膜的边缘区域设置有至少一个质量块；所述质量块与所述背板之间存在间隙。
  2. 根据权利要求1所述的MEMS声音传感器，其特征在于，所述振膜的边缘区域与所述MEMS声音传感器中的其他结构完全分离。
  3. 根据权利要求2所述的MEMS声音传感器，其特征在于，所述振膜和所述背板中的至少一个上形成有声孔。
  4. 根据权利要求2所述的MEMS声音传感器，其特征在于，所述振膜包括多个相互独立运动的膜片；每个所述膜片上设置有至少一个质量块；所述膜片上的质量块被设置到对应于所述膜片的频率检测范围。
  5. 根据权利要求4所述的MEMS声音传感器，其特征在于，所述振膜至少包括第一膜片、第二膜片和第三膜片；所述第一膜片的频率检测范围为100Hz～1KHz；所述第二膜片的频率检测范围为1KHz～10KHz；所述第三膜片的频率检测范围为10KHz～20KHz。
  6. 根据权利要求4所述的MEMS声音传感器，其特征在于，所述振膜中的各膜片具有不同的频率检测范围。
  7. 根据权利要求2所述的MEMS声音传感器，其特征在于，所述质量块包括第一部分；所述第一部分设置于所述振膜上朝向所述背板的一面；所述 第一部分与所述背板之间存在有间隙。
  8. 根据权利要求7所述的MEMS声音传感器，其特征在于，所述第一部分上朝向所述背板的一面设置防粘连部；所述防粘连部和所述背板之间存在有间隙。
  9. 根据权利要求7所述的MEMS声音传感器，其特征在于，所述质量块还包括第二部分；所述第二部分设置于所述振膜上远离所述背板的一面。
  10. 根据权利要求7所述的MEMS声音传感器，其特征在于，所述背板包括第一导电层和保护层；所述保护层通过第一绝缘层与所述基板连接；所述保护层包覆所述第一导电层；所述连接柱的第二端至少部分的材料嵌入所述第一导电层。
  11. 根据权利要求10所述的MEMS声音传感器，其特征在于，所述第一绝缘层中设置有限位层，所述限位层用于限定所述背板下方的材料层在刻蚀过程中的移除位置与移除量。
  12. 根据权利要求10所述的MEMS声音传感器，其特征在于，所述第一导电层包括彼此分开的背板电极和所述振膜引出区；所述MEMS声音传感器还包括第二绝缘层、背板电极引出电极和振膜引出电极；所述第二绝缘层设置于所述保护层上；所述背板电极引出电极设置于所述第二绝缘层上并贯穿所述第二绝缘层和所述保护层后与所述背板电极连接；所述振膜引出电极设置于所述第二绝缘层上并贯穿所述第二绝缘层和所述保护层后与所述振膜引出区连接；所述振膜引出区域与所述连接柱的第二端电性连接。
  13. 根据权利要求12所述的MEMS声音传感器，其特征在于，所述振膜、所述质量块、所述背板电极引出电极和所述振膜引出电极所在的材料层在同一工艺步骤中形成。
  14. 根据权利要求10所述的MEMS声音传感器，其特征在于，所述连接柱包括相互间隔设置的第二导电层和第三绝缘层；所述第二导电层的第一端与所述振膜电性连接；所述第二导电层的第二端嵌入所述第一导电层内。
  15. 根据权利要求14所述的MEMS声音传感器，其特征在于，所述第二 导电层包括第一类型导电层和第二类型导电层中的至少一种导电层；所述第一类型导电层的第二端嵌入至所述第一导电层内；所述第二类型导电层的第二端嵌入并贯穿所述第一导电层。
  16. 根据权利要求15所述的MEMS声音传感器，其特征在于，所述背板上远离所述振膜的一面形成有一体化的凸起；所述第二类型导电层的第二端延伸至所述凸起内。
  17. 根据权利要求15所述的MEMS声音传感器，其特征在于，所述连接柱还包括承载部；所述承载部至少与部分所述第二类型导电层的第二端连接。
  18. 根据权利要求14～17任一所述的MEMS声音传感器，其特征在于，所述第三绝缘层的第一端与所述振膜连接；所述第三绝缘层的第二端嵌入所述第一导电层内。
  19. 根据权利要求1～18任一所述MEMS声音传感器，其特征在于，所述MEMS声音传感器作为加速度传感器。
  20. 一种MEMS麦克风，包括印刷电路板、设置于所述印刷电路板上的MEMS声音传感器和设置于所述印刷电路板上的集成电路；其特征在于，所述MEMS麦克风采用如权利要求1～19任一所述的MEMS声音传感器。
  21. 根据权利要求20所述的MEMS麦克风，其特征在于，所述MEMS声音传感器和所述集成电路采用倒装工艺集成在所述印刷电路板上。
  22. 根据权利要求20所述的MEMS麦克风，其特征在于，还包括封装壳体；所述封装壳体与所述印制电路板相互配合形成用于容纳所述MEMS声音传感器和所述集成电路的容纳空间；
    所述封装壳体和所述印制电路板上均未开设供气流穿过的穿孔，或者所述封装壳体或者所述印制电路板在靠近所述MEMS麦克风的区域开设有供气流穿过的穿孔。
  23. 一种电子设备，包括设备本体以及设置在所述设备本体上的MEMS麦克风；其特征在于，所述MEMS麦克风采用如权利要求20～22任一所述的MEMS麦克风。
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US20150256916A1 (en) * 2014-03-04 2015-09-10 Knowles Electronics, Llc Programmable Acoustic Device And Method For Programming The Same
CN108513241A (zh) * 2018-06-29 2018-09-07 歌尔股份有限公司 振动传感器和音频设备

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