CN105720144A - 一种硅衬底氮化物紫外led芯片结构及其实现方法 - Google Patents
一种硅衬底氮化物紫外led芯片结构及其实现方法 Download PDFInfo
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- CN105720144A CN105720144A CN201610171718.6A CN201610171718A CN105720144A CN 105720144 A CN105720144 A CN 105720144A CN 201610171718 A CN201610171718 A CN 201610171718A CN 105720144 A CN105720144 A CN 105720144A
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- 229910015363 Au—Sn Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
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- 229910017083 AlN Inorganic materials 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (10)
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CN201610171718.6A CN105720144B (zh) | 2016-03-24 | 2016-03-24 | 一种硅衬底氮化物紫外led芯片结构及其实现方法 |
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CN201610171718.6A CN105720144B (zh) | 2016-03-24 | 2016-03-24 | 一种硅衬底氮化物紫外led芯片结构及其实现方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110137319A (zh) * | 2019-05-21 | 2019-08-16 | 芜湖德豪润达光电科技有限公司 | Led外延结构及其制作方法 |
CN110459652A (zh) * | 2018-05-08 | 2019-11-15 | 中国科学院宁波材料技术与工程研究所 | AlGaN基紫外LED器件及其制备方法与应用 |
CN111146314A (zh) * | 2018-11-06 | 2020-05-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | 提高氮化物半导体紫外发光二极管取光效率的方法及应用 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007123450A (ja) * | 2005-10-26 | 2007-05-17 | Matsushita Electric Works Ltd | 光学部品の製造方法及び発光素子 |
CN101969092A (zh) * | 2010-09-16 | 2011-02-09 | 兰红波 | 垂直结构金属衬底准光子晶体hb-led芯片及制造方法与应用 |
CN102347411A (zh) * | 2010-07-23 | 2012-02-08 | Lg伊诺特有限公司 | 发光器件、包括发光器件的发光器件封装以及照明系统 |
CN103996755A (zh) * | 2014-05-21 | 2014-08-20 | 天津三安光电有限公司 | 一种氮化物发光二极管组件的制备方法 |
CN105070805A (zh) * | 2015-08-17 | 2015-11-18 | 晶能光电(常州)有限公司 | 一种硅基氮化物紫外led外延结构及其实现方法 |
CN105144345A (zh) * | 2013-03-15 | 2015-12-09 | 晶体公司 | 与赝配电子和光电器件的平面接触 |
TW201607076A (zh) * | 2014-07-02 | 2016-02-16 | Ushio Electric Inc | Led元件 |
-
2016
- 2016-03-24 CN CN201610171718.6A patent/CN105720144B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007123450A (ja) * | 2005-10-26 | 2007-05-17 | Matsushita Electric Works Ltd | 光学部品の製造方法及び発光素子 |
CN102347411A (zh) * | 2010-07-23 | 2012-02-08 | Lg伊诺特有限公司 | 发光器件、包括发光器件的发光器件封装以及照明系统 |
CN101969092A (zh) * | 2010-09-16 | 2011-02-09 | 兰红波 | 垂直结构金属衬底准光子晶体hb-led芯片及制造方法与应用 |
CN105144345A (zh) * | 2013-03-15 | 2015-12-09 | 晶体公司 | 与赝配电子和光电器件的平面接触 |
CN103996755A (zh) * | 2014-05-21 | 2014-08-20 | 天津三安光电有限公司 | 一种氮化物发光二极管组件的制备方法 |
TW201607076A (zh) * | 2014-07-02 | 2016-02-16 | Ushio Electric Inc | Led元件 |
CN105070805A (zh) * | 2015-08-17 | 2015-11-18 | 晶能光电(常州)有限公司 | 一种硅基氮化物紫外led外延结构及其实现方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110459652A (zh) * | 2018-05-08 | 2019-11-15 | 中国科学院宁波材料技术与工程研究所 | AlGaN基紫外LED器件及其制备方法与应用 |
CN111146314A (zh) * | 2018-11-06 | 2020-05-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | 提高氮化物半导体紫外发光二极管取光效率的方法及应用 |
CN110137319A (zh) * | 2019-05-21 | 2019-08-16 | 芜湖德豪润达光电科技有限公司 | Led外延结构及其制作方法 |
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Effective date of registration: 20210826 Address after: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Applicant after: LATTICE POWER (JIANGXI) Corp. Address before: 213164 No.7, Fengxiang Road, Wujin high tech Industrial Development Zone, Changzhou City, Jiangsu Province Applicant before: LATTICE POWER (CHANGZHOU) Corp. |
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Address after: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Patentee after: Jingneng optoelectronics Co.,Ltd. Address before: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Patentee before: LATTICE POWER (JIANGXI) Corp. |