CN105702585A - 一种薄膜晶体管和显示基板及其制作方法、显示器件 - Google Patents

一种薄膜晶体管和显示基板及其制作方法、显示器件 Download PDF

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CN105702585A
CN105702585A CN201610201212.5A CN201610201212A CN105702585A CN 105702585 A CN105702585 A CN 105702585A CN 201610201212 A CN201610201212 A CN 201610201212A CN 105702585 A CN105702585 A CN 105702585A
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CN105702585B (zh
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杨丽娟
周如
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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Hefei BOE Optoelectronics Technology Co Ltd
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Abstract

本发明涉及显示技术领域，公开了一种薄膜晶体管和显示基板及其制作方法、显示器件。所述制作方法在形成源电极和漏电极的构图工艺中，首先在源漏金属层上形成平坦层，提供平坦表面，然后在平坦层上形成光刻胶，从而光刻胶的厚度一致，曝光均匀，能够严格控制源电极和漏电极的线宽，即使源电极和漏电极之间的间隔距离较小，由于不存在光刻胶过度曝光的现象，因此也不容易出现短接的问题，适用于高分辨率的产品中，并保证产品的良率。

Description

一种薄膜晶体管和显示基板及其制作方法、显示器件
技术领域
本发明涉及显示技术领域，特别是涉及一种薄膜晶体管和显示基板及其制作方法、显示器件。
背景技术
薄膜晶体管液晶显示器件(TFT-LCD)具有亮度好、对比度高、功耗低、体积小、重量轻等优点，得到越来越多地广泛应用。随着市场对分辨率的要求越来越高，为了兼顾高开口率和低功耗的性能，薄膜晶体管(TFT)的尺寸越来越小。对于薄膜晶体管制作工艺而言，沟道尺寸的微小化程度是整个薄膜晶体管性能的关键。其中，薄膜晶体管的沟道由有源层位于源电极和漏电极之间的部分形成。
参见图2所示，对于薄膜晶体管的沟道，在形成源电极1和漏电极2的制程中，希望源电极1和漏电极2之间的间隔距离(对应沟道的宽度)A一致。但是，结合图1a和1b所示，由于源电极1和漏电极2下面的膜层表面存在台阶，不平整，在形成源电极1和漏电极2的制程中，涂覆在源漏金属层10上的光刻胶20在跨越台阶时，厚度会有改变：台阶上的光刻胶厚度d比其他区域的厚度d＇小。当这个厚度差异较大时，在对光刻胶20进行曝光后，会使得台阶上的光刻胶20过度曝光，而台阶下的光刻胶20曝光不足。在对光刻胶20显影后，以光刻胶20为阻挡刻蚀形成的源电极1和漏电极2，其位于台阶下部分的线宽比位于台阶上部分的线宽要大，即，沟道位于台阶下部分的宽度比位于台阶上部分的宽度要小。在沟道尺寸比曝光机精度大、曝光机有足够的Margin的情况下，尽管源电极1和漏电极2位于台阶下部分的线宽较大，也不会发生短接现象。但是，对于高分辨率产品，沟道尺寸已经越来越接近曝光机极限，这就导致在源电极1和漏电极2的制程中经常会因为沟道宽度过小，发生短接不良，如图1a中线框B内所示。
发明内容
本发明提供一种薄膜晶体管和显示基板及其制作方法、显示器件，用以解决源电极和漏电极形成在不平整表面上时，若两者间隔距离较小容易发生短接的问题。
为解决上述技术问题，本发明实施例中提供一种薄膜晶体管的制作方法，包括：
形成源漏金属层；
在所述源漏金属层上形成平坦层；
对所述平坦层和源漏金属层进行构图工艺，形成源电极和漏电极。
本发明实施例中还提供一种显示基板的制作方法，所述显示基板包括薄膜晶体管，所述制作方法包括：
采用如上所述的制作方法形成薄膜晶体管。
本发明实施例中还提供一种薄膜晶体管，所述薄膜晶体管包括有源层、源电极和漏电极，采用如上所述的制作方法制得，所述有源层包括位于所述源电极和漏电极之间的第一部分，所述第一部分从靠近源电极的一侧到靠近漏电极一侧的宽度一致。
本发明实施例中还提供一种显示基板，包括如上所述的薄膜晶体管。
本发明实施例中还提供一种显示器件，包括如上所述的显示基板。
本发明的上述技术方案的有益效果如下：
上述技术方案中，在形成源电极和漏电极的构图工艺中，首先在源漏金属层上形成平坦层，提供平坦表面，然后在平坦层上形成光刻胶，从而光刻胶的厚度一致，曝光均匀，能够严格控制源电极和漏电极的线宽，即使源电极和漏电极之间的间隔距离较小，由于不存在光刻胶过度曝光的现象，因此也不容易出现短接的问题，适用于高分辨率的产品中，并保证产品的良率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1a表示现有技术中源电极和漏电极发生短接不良的示意图；
图1b表示现有技术中在源漏金属层上形成光刻胶时的结构示意图；
图2表示本发明实施例中源电极和漏电极之间的位置关系图；
图3表示本发明实施例中源电极和漏电极的制作流程图一；
图4表示本发明实施例中源电极和漏电极的制作流程图二；
图5-图8表示本发明实施例中薄膜晶体管的制作过程示意图。
具体实施方式
随着TFT-LCD的分辨率越来越高，为了兼顾开口率和低功耗的性能，薄膜晶体管的尺寸越来越小。对于小尺寸的薄膜晶体管，沟道的制作是整个工艺的关键步骤，决定了整个薄膜晶体管的性能。其中，薄膜晶体管的沟道由有源层位于源电极和漏电极之间的部分形成。
当源电极和漏电极形成在不平整表面时，在制作源电极和漏电极的构图工艺中，不平整的表面会导致光刻胶的厚度不均匀，而较薄的光刻胶会曝光过度。此时，若源电极和漏电极的间隔距离较小，容易发生短接的问题。尤其当源电极和漏电极的间隔距离接近曝光机极限时，很容易发生短接的问题。
为了解决上述技术问题，本发明在制作源电极和漏电极时，首先在源漏金属层上形成平坦层，提供平坦表面，从而在平坦层上形成的光刻胶厚度一致，曝光均匀，能够严格控制源电极和漏电极的线宽，即使源电极和漏电极之间的间隔距离较小，由于不存在光刻胶过度曝光的现象，因此也不容易出现短接的问题，适用于高分辨率的产品中，并保证产品的良率。
下面将结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。
实施例一
本实施例中提供一种薄膜晶体管的制作方法，包括：
形成源漏金属层；
在所述源漏金属层上形成平坦层；
对所述平坦层和源漏金属层进行构图工艺，形成源电极和漏电极。
通过上述步骤形成的源电极和漏电极不容易发生短接的问题，保证了小尺寸薄膜晶体管的性能。
在形成源电极和漏电极后，可以去除源电极和漏电极上的平坦层。
所述薄膜晶体管的制作方法还包括形成栅电极和有源层，通过所述栅电极打开或关闭薄膜晶体管。当薄膜晶体管打开时，所述有源层位于源电极和漏电极之间的部分形成薄膜晶体管的导电沟道。
本发明的技术方案尤其适用于源电极和漏电极形成在不平整表面上的情况，例如：底栅型薄膜晶体管、底栅共面型薄膜晶体管。
其中，所述平坦层可以由光刻胶制得，也可以由树脂等有机材料制得，或氧化硅、氮化硅等无机绝缘材料制得。所述平坦层的厚度较大，能够抹平不平整表面，提供平坦表面。制备源电极和漏电极的源漏金属层的材料可以选择Cu，Al，Ag，Mo，Cr，Nd，Ni，Mn，Ti，Ta，W等金属以及这些金属的合金，所述源漏金属层可以是单层结构或者多层结构，多层结构比如Cu\Mo，Ti\Cu\Ti，Mo\Al\Mo等。
本实施例中，所述平坦层由光刻胶制得。具体的，所述平坦层可以由正性光刻胶制得。由于正性光刻胶只有经过曝光后，才能通过显影或剥离工艺去除。因此，为了便于后续工艺中去除平坦层，在对所述源漏金属层进行构图工艺，形成源电极和漏电极的步骤之前还包括：
直接对所述平坦层进行曝光。
经过上述步骤处理后，在形成源电极和漏电极的构图工艺中，所述平坦层可以通过光刻胶的显影或剥离工艺去除，工艺简单。进一步地，如图1所示，对所述平坦层和源漏金属层进行构图工艺，形成源电极和漏电极的构图工艺具体包括：
在所述平坦层上形成光刻胶层；
利用掩膜板对所述光刻胶层进行曝光，显影后形成光刻胶保留区域和光刻胶不保留区域，所述显影工艺还用于去除光刻胶不保留区域的平坦层，所述光刻胶保留区域对应源电极和漏电极所在的区域，所述光刻胶不保留区域对应其他区域；
去除所述光刻胶不保留区域的源漏金属层，形成源电极和漏电极的图案；
剥离剩余的平坦层，形成源电极和漏电极。
当然，所述平坦层也可以由负性光刻胶制得。由于负性光刻胶可以直接通过显影和剥离工艺去除，不需要曝光，相对于正性光刻胶，省略了直接对整个平坦层进行曝光的工艺。则，如图4所示，对所述平坦层和源漏金属层进行构图工艺，形成源电极和漏电极的步骤具体包括：
在所述平坦层上形成光刻胶层；
利用掩膜板对所述光刻胶层进行曝光，显影后形成光刻胶保留区域和光刻胶不保留区域，所述显影工艺还用于去除光刻胶不保留区域的平坦层，所述光刻胶保留区域对应源电极和漏电极所在的区域，所述光刻胶不保留区域对应其他区域；
去除所述光刻胶不保留区域的源漏金属层，形成源电极和漏电极的图案；
剥离剩余的平坦层，形成源电极和漏电极。
本实施例的所述平坦层由光刻胶制得，能够简化平坦层的去除工艺。在实际应用时，所述平坦层也可以由有机绝缘材料或无机绝缘材料制得，则形成源电极和漏电极的构图工艺具体包括：
在所述平坦层上形成光刻胶层；
利用掩膜板对所述光刻胶层进行曝光，显影后形成光刻胶保留区域和光刻胶不保留区域，所述光刻胶保留区域对应源电极和漏电极所在的区域，所述光刻胶不保留区域对应其他区域；
去除所述光刻胶不保留区域的平坦层和源漏金属层，形成源电极和漏电极的图案；
剥离剩余的光刻胶，并去除剩余的平坦层，形成源电极和漏电极。
上述步骤中，去除源漏金属层的工艺具体可以为湿法刻蚀工艺，去除平坦层的工艺具体可以为干法刻蚀工艺。
结合图5-图8所示，以底栅型薄膜晶体管为例，本实施例中薄膜晶体管的制作方法具体包括：
提供一透明的基底100，如：石英基底、玻璃基底、树脂基底；
在基底100上形成栅电极3，栅电极3的材料可以是Cu，Al，Ag，Mo，Cr，Nd，Ni，Mn，Ti，Ta，W等金属以及这些金属的合金，可以是单层结构或者多层结构，多层结构比如Cu\Mo，Ti\Cu\Ti，Mo\Al\Mo等；
形成覆盖栅电极3的栅绝缘层101，栅绝缘层101的材料可以为氮氧化物，如：SiNX、SiO2、SiON；
在栅绝缘层101上形成有源层4，有源层4可以为硅半导体，如：单晶硅或多晶硅，也可以为金属氧化物半导体，如：HIZO、ZnO、TiO2、CdSnO、MgZnO、IGO、IZO、ITO或IGZO；
在有源层4上源漏金属层10，如图5所示；
在源漏金属层10上形成平坦层200，平坦层200由正性光刻胶制得；
直接对平坦层200进行曝光；
对平坦层200和源漏金属层10进行构图工艺，形成源电极1和漏电极，具体包括：
在平坦层200上涂覆光刻胶层300，刻胶层300的厚度一致，如图6所示；
利用掩膜板对光刻胶层300进行曝光，曝光均匀，显影后形成光刻胶保留区域和光刻胶不保留区域，所述显影工艺还用于去除光刻胶不保留区域的平坦层200，如图7所示，所述光刻胶保留区域对应源电极和漏电极所在的区域，所述光刻胶不保留区域对应其他区域；
去除所述光刻胶不保留区域的源漏金属层，形成源电极1和漏电极的图案；
剥离剩余的平坦层，形成源电极1和漏电极，如图8所示。
至此完成薄膜晶体管的制作。需要说明的是，附图中仅示意出源电极1的制作过程，漏电极与源电极1的制作过程相同，不再重复示意。
本实施例中还提供一种显示基板的制作方法，包括：
采用上述的制作方法形成薄膜晶体管。
通过上述步骤形成的显示基板，能够实现小尺寸的薄膜晶体管，并保证薄膜晶体管的性能，提高开口率，适用于高分辨率的产品。
其中，所述显示基板可以为液晶显示器件的薄膜晶体管阵列基板、有源矩阵有机发光二极管显示器件的显示基板等。
实施例二
基于同一发明构思，结合图2和图8所示，本实施例中提供一种薄膜晶体管，所述薄膜晶体管包括栅电极3、有源层4、源电极1和漏电极2。
所述薄膜晶体管采用实施例一的制作方法制得，有源层3包括位于源电极1和漏电极之间的第一部分，所述第一部分用于形成薄膜晶体管的沟道，且所述第一部分从靠近源电极1的一侧到靠近漏电极2一侧的宽度A一致，即，源电极1和漏电极2之间的间隔距离一致，在制作小尺寸薄膜晶体管时，能够保证源电极1和漏电极2不会发生短接的问题，提高产品的良率。
本实施例中还提供一种显示基板和显示器件，所述显示基板包括上述的薄膜晶体管，所述一种显示器件包括所述显示基板，能够实现高分辨率的产品，并保证薄膜晶体管的性能，提高产品的良率。
所述显示器件可以为显示面板、电子纸、手机、平板电脑、电视机、液晶显示器、有机发光二极管显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和替换，这些改进和替换也应视为本发明的保护范围。

Claims (12)

1.一种薄膜晶体管的制作方法，包括：
形成源漏金属层；
在所述源漏金属层上形成平坦层；
对所述平坦层和源漏金属层进行构图工艺，形成源电极和漏电极。
2.根据权利要求1所述的制作方法，其特征在于，所述平坦层由光刻胶制得。
3.根据权利要求2所述的制作方法，其特征在于，所述平坦层由正性光刻胶制得；
对所述源漏金属层进行构图工艺，形成源电极和漏电极的步骤之前还包括：
直接对所述平坦层进行曝光。
4.根据权利要求3所述的制作方法，其特征在于，对所述平坦层和源漏金属层进行构图工艺，形成源电极和漏电极的步骤包括：
在所述平坦层上形成光刻胶层；
利用掩膜板对所述光刻胶层进行曝光，显影后形成光刻胶保留区域和光刻胶不保留区域，所述显影工艺还用于去除光刻胶不保留区域的平坦层，所述光刻胶保留区域对应源电极和漏电极所在的区域，所述光刻胶不保留区域对应其他区域；
去除所述光刻胶不保留区域的源漏金属层，形成源电极和漏电极的图案；
剥离剩余的平坦层，形成源电极和漏电极。
5.根据权利要求2所述的制作方法，其特征在于，所述平坦层由负性光刻胶制得，对所述平坦层和源漏金属层进行构图工艺，形成源电极和漏电极的步骤具体包括：
在所述平坦层上形成光刻胶层；
利用掩膜板对所述光刻胶层进行曝光，显影后形成光刻胶保留区域和光刻胶不保留区域，所述显影工艺还用于去除光刻胶不保留区域的平坦层，所述光刻胶保留区域对应源电极和漏电极所在的区域，所述光刻胶不保留区域对应其他区域；
去除所述光刻胶不保留区域的源漏金属层，形成源电极和漏电极的图案；
剥离剩余的平坦层，形成源电极和漏电极。
6.根据权利要求1所述的制作方法，其特征在于，所述平坦层由有机树脂制得。
7.根据权利要求1所述的制作方法，其特征在于，所述平坦层由氮化硅或氧化硅制得。
8.根据权利要求1所述的制作方法，其特征在于，所述制作方法具体包括：
形成栅电极；
形成覆盖所述栅电极的栅绝缘层；
在所述栅绝缘层上形成有源层；
在所述有源层上源漏金属层；
在所述源漏金属层上形成平坦层；
对所述平坦层和源漏金属层进行构图工艺，形成源电极和漏电极。
9.一种显示基板的制作方法，所述显示基板包括薄膜晶体管，其特征在于，所述制作方法包括：
采用权利要求1-8任一项所述的制作方法形成薄膜晶体管。
10.一种薄膜晶体管，所述薄膜晶体管包括有源层、源电极和漏电极，其特征在于，采用权利要求1-8任一项所述的制作方法制得，所述有源层包括位于所述源电极和漏电极之间的第一部分，所述第一部分从靠近源电极的一侧到靠近漏电极一侧的宽度一致。
11.一种显示基板，其特征在于，包括权利要求10所述的薄膜晶体管。
12.一种显示器件，其特征在于，包括权利要求11所述的显示基板。
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CN103745955A (zh) * 2014-01-03 2014-04-23 京东方科技集团股份有限公司 显示装置、阵列基板及其制造方法
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US20120320299A1 (en) * 2006-06-30 2012-12-20 Kim Young-Joo Liquid crystal display device and method for fabricating the same
CN104681567A (zh) * 2013-12-02 2015-06-03 乐金显示有限公司 具有金属氧化物半导体的薄膜晶体管基板及其制造方法
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