CN105684089A - 刷新速率调整 - Google Patents

刷新速率调整 Download PDF

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CN105684089A
CN105684089A CN201380079157.1A CN201380079157A CN105684089A CN 105684089 A CN105684089 A CN 105684089A CN 201380079157 A CN201380079157 A CN 201380079157A CN 105684089 A CN105684089 A CN 105684089A
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row
refresh rate
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M.K.贝内迪特
E.L.波佩
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Hewlett Packard Enterprise Development LP
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    • G11C11/406Management or control of the refreshing or charge-regeneration cycles
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Abstract

一种技术包括确定存储器的行已经以阈值速率被激活。紧接在达到阈值速率之后,可以增加针对存储器的行和存储器的相邻行的刷新速率。在增加之后,刷新速率可以被返回到默认速率。

Description

刷新速率调整
背景技术
存储器设备包括用于存储数据值的存储器单元。存储器设备的示例性类型是动态随机存取存储器(DRAM)设备。随着存储器制造技术提高,存储器单元的特征尺寸已经减小,以增加存储器设备中的存储器单元的密度。增加存储器单元密度提供了在存储器设备中增加的存储容量。然而,随着存储器单元的特征尺寸减小,存储器设备可能变得更加容易受错误影响。
附图说明
图1是根据示例性实现的系统的框图。
图2是根据示例性实现的系统的框图。
图3-7是根据示例性实现的描绘与图1或图2的系统相关联的技术的流程图。
具体实施方式
计算系统可以出于不同目的而利用各种存储器。一种类型的存储器,即易失性存储器可能由于其有利的操作特性而被用作系统存储器。随着易失性存储器进步,某些特征已经引起了以前没有遇到的错​​误。例如,动态随机存取存储器(DRAM)设备以把组件放置得彼此比先前可能的更接近的特征尺寸被制造。当控制器重复访问相同或接近的存储器位置时,在接近的位置中存在影响存储器的电势。
更具体地,电荷可以被选择性地存储在动态随机存取存储器(DRAM)设备的基于电容器的存储器单元中以表示相应的存储数据。因为漏电流使存储的电荷降级,所以DRAM设备的存储器单元定期地刷新,这涉及读取存储在DRAM的设备存储器单元中的数据并且将该数据重写回存储器单元。
以足够高的速率对给定行的重复激活(例如,每刷新周期约几千次的激活)可能使存储在相邻字线中的数据降级(由DRAM特征的相对接近的间距导致的在DRAM中自然发生),即使这些字线被周期性地刷新。该重复激活错误可以被定义为行锤(row hammer)错误。换言之,当激活速率超过特定阈值时,周期性刷新间隔可能不足以保持所存储的数据。
在本公开中,描述了减轻上述问题的方法和系统。更具体地,公开了一种具有检测和识别攻击者行的能力的存储器控制器。当这样的行被识别时,存储器控制器可以实行增加的刷新速率。只要发生持续激活,存储器控制器就可以保持增加的刷新速率。在激活减退时,存储器控制器可以使刷新速率恢复回到默认速率。这可以消除单方面增加刷新速率的高性能成本,同时保持针对行锤效应的保护水平。
参考图1,图示了根据本公开的示例的系统的框图。系统100包括存储器设备102和存储器控制器104。
存储器设备102可以是包括容易受行锤错误影响的字线和位线阵列的任何存储器。为了本公开的目的,附图中讨论的存储器设备将被称为动态随机存取存储器(DRAM),然而,本公开不限于此。另外,DRAM可以与其他DRAM一起布置,以形成双列直插存储器模块(DIMM)。
存储器控制器104是管理去到和来自存储器设备102的数据流的电路。尽管被图示为独立组件,但是存储器控制器104不限于此。相反,存储器控制器104可以被集成到诸如微处理器(未图示)的其他组件中。此外,参考存储器控​​制器104讨论的各个方面可以被包含到存储器设备102中。
在图示的示例中,系统100包括容易受到包括行锤错误的各种类型的错误影响的存储器设备102。耦合到存储器设备102的存储器控制器104用于响应于确定存储器的行的激活速率106接近行锤速率而调整存储器设备的一区域在一段时间内的刷新速率108,该区域包括存储器的行和存储器的相邻行。
在一个示例中,存储器控制器104可以与各种规范兼容,各种规范包括但不限于双数据速率3(DDR3)或双数据速率4(DDR4)。存储器控制器104由于其架构而可以具有用于检测和识别攻击者行的能力,其中攻击者行是在一段时间内接收预定数目的激活的存储器设备102的行。在其他示例中,攻击者行可以经由除了存储器控制器104之外的组件来确定。
在各种示例中,识别攻击者行可以包括确定激活速率106,激活速率106是在影响行锤错误之前行可以在一段时间中接收的激活的数目。该激活速率160可以被确定为使得存储器控制器104具有足够的余量来在行锤错误发生之前识别和减轻行锤效应。
响应于识别出激活速率106和攻击者行(例如,存储器设备的受影响的行),存储器控制器104可以调整包括存储器的行和存储器的一个或多个相邻行的区域的刷新速率108,或者替代地调整存储器的行和存储器的相邻行的刷新速率。调整刷新速率108可以包括增加刷新速率。在各种示例中,增加的刷新速率108可以变化,但是在至少一个示例中,增加的刷新速率是默认速率的两倍(2×默认速率)。增加的刷新速率108可以在增加的刷新速率发起之后持续一段时间。在各种示例中,该一段时间可以是预定的,使得增加的刷新速率在识别之后的固定时间量内发生,或者替代地,可以是动态的,使得只要激活速率保持高于预定阈值,就保持增加的刷新速率108。
参考图2,根据本公开的示例图示了另一系统图。系统200包括具有多个字线的存储器设备202。存储器设备202被耦合到存储器控制器204。存储器设备202和存储器控制器204通常可以类似于参考图1所讨论的那些。
在图2中,存储器控制器204可以监视存储器设备202的字线210的激活速率206。存储器控制器204可以确定字线210中的一个的激活速率是否是在一段时间(例如默认刷新时段)内接收预定数目的激活。预定数目的激活指示存储器的行正在接近行锤速率,其中,行锤速率是可能影响存储器的其他行的激活速率。
响应于确定了存储器210的行的激活速率接近行锤速率,存储器控制器可以调整在图2中标识为212的存储器的行和存储器的相邻行的刷新速率。在各种示例中,调整存储器的行和存储器的相邻行的刷新速率可以包括调整存储器设备的刷新速率、存储器设备的一区域的刷新速率或所识别的行的刷新速率。刷新速率可以增加到某一倍数(诸如2倍)。一旦增加,存储器控制器204就可以保持增加的刷新速率208达一段时间。
在一个示例中,可以基于在接近行锤速率之后存储器的行的激活速率保持高于阈值的时间长度来确定所述一段时间。换言之,一旦增加,存储器控制器就可以利用一个或多个其他阈值作为基于其确定增加的刷新速率应当被保持多久的度量。
在另一示例中,存储器控制器204用于保持增加的刷新速率208,直至存储器的行的激活速率减小为低于阈值达一段时间。阈值可以被确定为使得存在低可能性在该减小之后不久必须增加刷新速率。设想了其他实施例。
参考图3-7,图示了根据本公开的示例的各种流程图。流程图仅仅是为了说明的目的,并且不意在将本公开限制为操作的任何具体顺序,他们也不意图指示所有操作对于所有示例都是必要的。相反,在各种示例中,操作可以按与所包括的附图中图示的哪些顺序不同的顺序发生。
参考图3,图示了根据本公开的示例的第一流程图300。流程图300可以开始并且前进到302,其中存储器控制器(例如图1-2中图示的存储器控制器)可以确定存储器的行是否已经以阈值速率被激活,其中,阈值速率小于行锤速率。如果存储器控制器确定了存储器的行没有大于阈值速率被激活,则该方法可以如所示那样连续监视。
相反,如果存储器控制器确定了存储器的行已经大于阈值速率被激活,则流程图可以继续到304,其中存储器控制器可以增加存储器的行和存储器的相邻行的刷新速率。刷新速率的增加可以响应于302处的确定,并且可以防止或减轻行锤错误。
响应于增加刷新速率,存储器控制器可以在306处减小存储器的行和存储器的相邻行的刷新速率。减小刷新速率可以基于在增加之后的存储器规定。如本文使用的存储器规定是用于减小刷新速率的预定操作特性或规则。紧接在减小刷新速率之后,流程图可以结束。结束可以包括对存储器设备的多个字线的激活速率的继续监视。
参考图4,图示了根据本公开的示例的另一流程图。流程图400可以开始,并且继续到402,其中存储器控制器可以确定是否已经以阈值速率激活存储器的行,其中阈值速率小于行锤速率。在各种示例中,阈值速率可以被确定为使得达到阈值速率的行不触发行锤错误,但是相当有可能应当接收额外的激活。如果存储器控制器确定阈值尚未被满足,则存储器控制器可以继续监视存储器设备的行。
相反,如果存储器控制器确定存储器的行已经以阈值速率被激活,则流程图可以继续到404,其中存储器控制器可以把刷新速率增加到2倍。在各种其他示例中,增加到的倍数可以变化。紧接在404处增加刷新速率之后,存储器控制器可以监视存储器的行,以在406处确定存储器的行是否以阈值速率被持续激活。
如果存储器控制器确定存储器的行持续以阈值速率被访问,则存储器控制器可以保持增加的刷新速率,并且在406处继续监视。相反,如果存储器控制器确定激活速率没有高于阈值速率,则存储器控制器可以在410处基于存储器规定来减小存储器的行和存储器的相邻行的刷新速率。在各种示例中,在减小刷新速率之前,存储器控制器可以插入延迟408以在410处在向减小的刷新速率移动时实现迟滞。
紧接在减小刷新速率之后,该方法可以结束。在各种示例中,结束可包括在402处继续监视各种阈值速率。
参考图5,图示了根据各种示例的另一流程图。流程图500可以开始并且前进到502,其中存储器控制器可以确定存储器的行是否已经以阈值速率被激活,其中阈值速率小于行锤速度。在各种示例中,阈值速率可以被确定为使得达到阈值速率的行不触发行锤错误,但是相当有可能应当接收额外激活。如果存储器控制器确定了阈值尚未被满足,则存储器控制器可以继续监视存储器设备的行。
相反,如果存储器控制器例如通过确定激活计数在一段时间中已经达到预定阈值来确定阈值已经被满足,存储器的行的激活速率接近行锤速率,则存储器控制器可以在504处把刷新速率增加到2倍。紧接在504处增加了刷新速率之后,存储器控制器可以在506处启动计时器。然后,存储器控制器可以在506处确定定时器是否已经期满。紧接在计时器期满之后,存储器控制器然后可以减小存储器的行和存储器的相邻行的刷新速率。刷新速率可以减小到默认刷新速率。然后,该方法可以结束。在各种示例中,结束可以包括在502处继续监视存储器设备。
参考图6,图示了另一流程图。流程图600可以开始并且前进到602,其中计算设备可以监视存储器设备中的存储器的行的激活速率。计算设备可以在604处确定存储器的行的激活速率是否接近行锤速率。响应于确定激活速率没有接近行锤速率,计算设备可以在602处继续监视激活速率。
相反,如果计算设备在604处做出了激活速率接近行锤速率的确定,则计算设备可以调整存储器的行和存储器的相邻行的刷新速率,直至存储器的行的激活速率减小。然后,该方法可以结束。如前所述,在各种示例中,结束可以包括继续监视激活速率。
参考图7,根据示例图示了另一流程图。流程图700可以开始并且前进到702,其中计算设备可以监视存储器的行的激活速率。基于监视,计算设备可以确定激活计数在一段时间期间是否已经达到了预定阈值。如果计算设备没有确定激活计数已经达到预定阈值,则计算设备可以继续监视激活速率。
相反,如果计算设备在704处确定了激活计数高于阈值,则计算设备可以在706处把刷新速率增加到预设倍数。计算设备可以在存储器的行的激活速率之后增加刷新速率达一段时间。紧接在预设的一段时间期满708之后,计算设备可以将刷新速率返回到默认刷新速率。然后,该方法可以结束。如先前所解释的,结束可以包括继续监视一个或多个存储器设备的激活速率。
虽然本文已经公开了有限数目的示例,但是受益于本公开的本领域技术人员将认识到很多修改和变化。意图是所附权利要求涵盖所有这样的修改和变化。

Claims (15)

1.一种方法,包括:
通过存储器控制器来确定存储器的行已经以阈值速率被激活,其中,所述阈值速率小于行锤速率;
响应于所述确定,通过所述存储器控制器来增加针对包含存储器的行和存储器的相邻行的区域的刷新速率以防止行锤错误;以及
基于在所述增加之后的存储器规定,通过所述存储器控制器来减小针对包含存储器的行和存储器的相邻行的所述区域的刷新速率。
2.根据权利要求1所述的方法,其中,基于所述存储器规定来减小针对包含存储器的行和存储器的相邻行的所述区域的刷新速率包括基于一段时间的期满来减小刷新速率。
3.根据权利要求1所述的方法,进一步包括:
经由所述存储器控制器来监视在增加所述刷新速率之后的存储器的行,以确定所述存储器的行是否继续以所述阈值速率被激活;并且
其中,基于所述存储器规定来减小针对包含存储器的行和存储器的相邻行的区域的刷新速率包括基于所述监视指示所述存储器的行没有以阈值速率被激活来减小所述刷新速率。
4.根据权利要求3所述的方法,进一步包括:
在所述监视指示所述存储器的行没有以阈值速率被激活之后,所述存储器控制器延迟所述减小达一段时间。
5.根据权利要求1所述的方法,其中,增加所述刷新速率包括把所述刷新速率增加到2倍。
6.根据权利要求1所述的方法,其中,增加针对包含所述存储器的行和存储器的相邻行的区域的刷新速率包括:增加针对包括所述存储器的行和所述存储器的相邻行的设备的刷新速率。
7.根据权利要求1所述的方法,其中,减小针对包含所述存储器的行和存储器的相邻行的区域的刷新速率包括:使所述刷新速率返回到默认刷新速率。
8.一种方法,包括:
通过计算设备监视存储器设备中的存储器的行的激活速率;
通过所述计算设备来确定所述存储器的行的激活速率接近行锤速率;以及
通过所述计算设备调整针对所述存储器的行和存储器的相邻行的刷新速率,直至所述存储器的行的激活速率减小。
9.根据权利要求8所述的方法,其中,确定所述存储器的行的激活速率接近行锤速率包括:确定激活计数已经在一段时间中达到预定阈值。
10.根据权利要求8所述的方法,其中,调整针对所述存储器的行和存储器的相邻行的刷新速率包括:把针对包括所述存储器的行和所述存储器的相邻行的区域的刷新速率增加到预设倍数,直至所述存储器的行的激活速率减小到预定阈值。
11.根据权利要求8所述的方法,其中,调整针对所述存储器的行和所述存储器的相邻行的刷新速率包括:调整针对包括所述存储器的行的所述存储器设备的区域的刷新速率。
12.根据权利要求8所述的方法,其中,调整针对包含所述存储器的行和所述存储器的相邻行的区域的刷新速率包括:在所述存储器的行的激活速率减小之后,调整刷新速率达一段时间。
13.一种系统,包括:
存储器设备;以及
耦合到所述存储器设备的存储器控制器,所述存储器控制器用于响应于确定存储器的行的激活速率接近行锤速率来调整存储器的行和存储器的相邻行的刷新速率达一段时间。
14.根据权利要求13所述的系统,其中,所述一段时间是基于所述存储器的行的激活速率在接近所述行锤速率之后保持高于阈值的时间长度来确定的。
15.根据权利要求13所述的方法,其中,所述存储器控制器用于增加所述存储器的行和存储器的相邻行的刷新速率,直至所述存储器的行的激活速率减小到低于阈值达一段时间。
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