CN105679746A - APD-TIA coaxial type photoelectric assembly - Google Patents
APD-TIA coaxial type photoelectric assembly Download PDFInfo
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- CN105679746A CN105679746A CN201610239672.7A CN201610239672A CN105679746A CN 105679746 A CN105679746 A CN 105679746A CN 201610239672 A CN201610239672 A CN 201610239672A CN 105679746 A CN105679746 A CN 105679746A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
Abstract
The invention discloses an APD-TIA coaxial type photoelectric assembly, and the sensitivity of the photoelectric assembly is improved. A trans-impedance amplifier, an avalanche diode and a diode filtering capacitor are arranged on a tube base of the APD-TIA coaxial type photoelectric assembly. Electric appliance elements are mutually electrically connected through gold leads, wherein the gold leads having critical influences on the performance include PD+ wires, signal wires and ground wires, the horizontal length of each PD+ wire is smaller than or equal to 0.3 mm, the camber height of each PD+ wire is smaller than or equal to 0.15 mm, the horizontal length of each signal wire is smaller than or equal to 1 mm, the camber height of each signal wire is smaller than or equal to 0.2 mm, the horizontal length of each ground wire is smaller than or equal to 0.4 mm, and the camber height of each ground wire is smaller than or equal to 0.15 mm. According to the invention, the structures of the gold leads at sensitive positions are optimized, and that is to say, the lengths and the camber heights of the gold leads are limited in a quantified manner, so that the parasitic resistance and the inductance of the gold leads are better lowered.
Description
Technical field
The present invention relates to optical communication field, particularly relate to a kind of APD-TIA coaxial type photoelectric subassembly.
Background technology
High speed APD-TIA coaxial type photoelectric subassembly, is widely used in optical communications industry, and such as EPON, Technical on SDH Network, Ethernet, optical fiber transport channel or other long-haul transmission systems, transfer rate is up to 10Gb/s. Existing APD-TIA coaxial type photoelectric subassembly, use common globe lens, common base, TIA (trans-impedanceamplifier, trans-impedance amplifier), APD (AvalanchePhotoDiode, avalanche photodide) etc. element composition, adopt spun gold lead-in wire to realize electrical connection between each element, but in prior art, radian and the horizontal length of spun gold lead-in wire strictly do not control, cause that dead resistance electric capacity is excessive, the strong influence sensitivity of photoelectric subassembly.
Summary of the invention
It is an object of the invention to provide a kind of APD-TIA coaxial type photoelectric subassembly, solve above technical problem.
For reaching this purpose, the present invention by the following technical solutions:
A kind of APD-TIA coaxial type photoelectric subassembly, for improving the sensitivity of photoelectric subassembly, including base, described base is provided with trans-impedance amplifier, avalanche diode and diode filter capacitor;
The PINA input of described trans-impedance amplifier is connected with the positive electrical of described avalanche diode by PD+ line; The outfan of described trans-impedance amplifier is electrically connected with two outfan PIN needle of described base by two holding wires; The earth terminal of described trans-impedance amplifier is electrically connected with base by ground wire; The negative electricity of described avalanche diode connects the positive pole of described diode filter capacitor, the minus earth of described diode filter capacitor;
Described PD+ line, described holding wire and described ground wire are the spun gold lead-in wire of arc;
The horizontal length of described PD+ line is less than or equal to 0.3 millimeter, and the camber of described PD+ line is less than or equal to 0.15 millimeter; The horizontal length of described holding wire is less than or equal to 1 millimeter, and the camber of described holding wire is less than or equal to 0.2 millimeter;The horizontal length of described ground wire is less than or equal to 0.4 millimeter, and the camber of described ground wire is less than or equal to 0.15 millimeter.
Adopt spun gold lead-in wire to be electrically connected between each electric elements, wherein, performance has the spun gold lead-in wire of critical impact include PD+ line, holding wire and ground wire, strictly controls its horizontal length and camber, the sensitivity of photoelectric subassembly can be improved.
Preferably, described APD-TIA coaxial type photoelectric subassembly also includes diode build-out resistor;
One end of described diode build-out resistor electrically connects the V of described baseAPDInput PIN needle; The other end of described diode build-out resistor electrically connects the negative pole of described avalanche diode.
Preferably, described outfan PIN needle is cylindrical;
The diameter of described outfan PIN needle is 0.2 millimeter.
Preferably, the breakdown voltage of described diode filter capacitor is 63 volts, and when 1KHz, 1Vrms, the capacitance of described diode filter capacitor is less than or equal to 470 pico farads.
Preferably, the breakdown voltage of described power filtering capacitor is 25 volts, and when 1KHz, 1Vrms, capacitance is less than or equal to 1000 pico farads.
Preferably, the breakdown voltage of described diode build-out resistor is 63 volts, and when 1KHz, 1Vrms, the resistance value of described diode build-out resistor is less than or equal to 100 ohm.
Preferably, described base is TO-46 base.
Preferably, described APD-TIA coaxial type photoelectric subassembly also includes power filtering capacitor;
The positive electrical of described power filtering capacitor 70 connects the V of described baseCCInput PIN needle, the minus earth of described power filtering capacitor.
Preferably, the external diameter of described TO-46 base is 4.6 millimeters.
Preferably, described APD-TIA coaxial type photoelectric subassembly also includes pipe cap, and described pipe cap is provided with non-spherical lens;
The axis of the axis of described non-spherical lens and described base is on the same line;
The front focal length of described non-spherical lens is 2.7 millimeters, and the rear object distance of described non-spherical lens is 1.24 millimeters.
Beneficial effects of the present invention: the embodiment of the present invention is by optimizing the structure of the spun gold lead-in wire of sensitive position, namely length and camber to spun gold lead-in wire are made and are determined quantitative limitation, thus better reducing dead resistance and the inductance of spun gold lead-in wire, improve the sensitivity of photoelectric subassembly.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
The overall structure schematic diagram of the APD-TIA coaxial type photoelectric subassembly that Fig. 1 provides for the embodiment of the present invention.
The structural representation of the base that Fig. 2 provides for the embodiment of the present invention.
The top view of the base that Fig. 3 provides for the embodiment of the present invention.
The structural representation of the PD+ line that Fig. 4 provides for the embodiment of the present invention.
The structural representation of the pipe cap that Fig. 5 provides for the embodiment of the present invention.
In figure:
10, pipe cap; 11, non-spherical lens; 12, cap body; 20, base; 21, input PIN needle; 22, outfan PIN needle; 30, trans-impedance amplifier; 40, diode build-out resistor; 50, diode filter capacitor; 60, avalanche diode; 70, power filtering capacitor; 81, ground wire; 82, holding wire; 83, PD+ line;90, pin.
Detailed description of the invention
Embodiments provide a kind of APD-TIA coaxial type photoelectric subassembly, for improving the sensitivity of photoelectric subassembly.
For making the goal of the invention of the present invention, feature, the advantage can be more obvious and understandable, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, the embodiments described below are only a part of embodiment of the present invention, and not all embodiment. Based on the embodiment in the present invention, all other embodiments that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
Technical scheme is further illustrated below in conjunction with accompanying drawing and by detailed description of the invention.
Refer to the overall structure schematic diagram of the APD-TIA coaxial type photoelectric subassembly that Fig. 1, Fig. 1 provide for the embodiment of the present invention. This APD-TIA coaxial type photoelectric subassembly includes pipe cap 10, base 20 and pin 90.
Refer to the structural representation of the base that Fig. 2, Fig. 2 provide for the embodiment of the present invention.
On base 20, epoxy is pasted with multiple electric elements, including trans-impedance amplifier 30, avalanche diode 60, diode build-out resistor 40, diode filter capacitor 50 and power filtering capacitor 70, concrete, according to coupling desired positions, use epoxy resin to be attached on base 20 by multiple electric elements, and pass through hot setting. Spun gold lead-in wire is adopted to be electrically connected between each electric elements.
Refer to the top view of the base 20 that Fig. 3, Fig. 3 provide for the embodiment of the present invention.
Wherein the spun gold lead-in wire of sensitive position mainly includes ground wire 81, holding wire 82 and PD+ line 83.
The outfan of trans-impedance amplifier 30 is electrically connected with two outfan PIN needle 22 of base 20 by two holding wires 82, and outfan PIN needle 22 includes OUTP pin and OUTN pin, and outfan PIN needle 22 is cylindrical, and diameter is 0.2 millimeter. The PINA input of trans-impedance amplifier 30 is connected with the positive electrical of avalanche diode 60 by PD+ line 83. Ground wire 81 includes many, and the line that trans-impedance amplifier 30 is connected with base 20 is ground wire 81, and the earth terminal of trans-impedance amplifier 30 is electrically connected with base 20 by ground wire 81. The negative electricity of avalanche diode 60 connects the positive pole of diode filter capacitor 50, the minus earth of diode filter capacitor 50. The positive electrical of power filtering capacitor 70 connects the V of described base 20CCInput PIN needle, the minus earth of described power filtering capacitor 70. The V of one end electrical connection base 20 of diode build-out resistor 40APDInput PIN needle; The negative pole of the other end electrical connection avalanche diode 60 of diode build-out resistor 40.
Described PD+ line 83, holding wire 82 and ground wire 81 are the spun gold lead-in wire of arc. Wherein, the structure of spun gold lead-in wire refer to the structural representation of the PD+ line that Fig. 4, Fig. 4 provide for the embodiment of the present invention. The structure of holding wire 82 and ground wire 81 and the structure proximate of PD+ line 83, simply size is likely to adjust to some extent.
PD+ line 83 includes line seat the 831, first bending section 832 and the second bending section 833, and the first bending section 832 and the second bending section 833 are structure as a whole. For ease of describing, with the putting position of the PD+ line 83 in Fig. 4 for benchmark, the upper end of the first bending section 832 and the right-hand member of the second bending section 833 connect, and junction presents a circular shape; Lower end and the line seat 831 of the first bending section 832 connect. Defining the left end of the second bending section 833 to the horizontal length that distance is PD+ line 83 between the lower end of the first bending section 832, the top of described junction is to the camber that distance is PD+ line 83 between the bottom of line seat 831.
Preferably, the horizontal length of PD+ line 83 is less than or equal to 0.3 millimeter, and the camber of PD+ line 83 is less than or equal to 0.15 millimeter.
Preferably, the horizontal length of holding wire 82 is less than or equal to 1 millimeter, and the camber of holding wire 82 is less than or equal to 0.2 millimeter; The horizontal length of ground wire 81 is less than or equal to 0.4 millimeter, and the camber of ground wire 81 is less than or equal to 0.15 millimeter.
Concrete, input PIN needle 21 includes VAPDInput PIN needle and VCCInput PIN needle.
Preferably, the breakdown voltage of diode filter capacitor 50 is 63 volts, and under 1KHz, 1Vrms (Voltagerootmeansquare, the root-mean-square of voltage) condition, the capacitance of described diode filter capacitor 50 is less than or equal to 470 pico farads.
Preferably, the breakdown voltage of described power filtering capacitor 70 is 25 volts, and when 1KHz, 1Vrms, capacitance is less than or equal to 1000 pico farads.
Preferably, the breakdown voltage of diode build-out resistor 40 is 63 volts, and when 1KHz, 1Vrms, the resistance value of described diode build-out resistor 40 is less than or equal to 100 ohm.
In the present embodiment, base 20 adopts TO-46 base, and the external diameter of described TO-46 base is 4.6 millimeters.
Structural representation please continue to refer to the pipe cap that Fig. 5, Fig. 5 provide for the embodiment of the present invention.
Pipe cap 10 is provided with non-spherical lens 11 and cap body 12. Non-spherical lens 11 is arranged in cap body 12, and the axis of the axis of non-spherical lens 11 and base 20 is on the same line.
Concrete, the front focal length LP of non-spherical lens 11 is 2.7 millimeters, and the rear object distance FF of non-spherical lens is 1.24 millimeters.
In the present embodiment, by strictly controlling camber and the horizontal length of spun gold lead-in wire, to reduce dead resistance and/or electric capacity as far as possible; Reduce the size of outfan PIN needle to 0.2 millimeter, avoid or reduce signal output distortion as much as possible; Newly increase a diode build-out resistor 40, filter out low frequency noise well; Optical signal coupling efficiency is about 90% by traditional common globe lens, and the present embodiment adopts non-spherical lens, and the coupling efficiency of optical signal is reached 98% by it, improves the coupling efficiency of light.
Under common testing conditions, namely input optical wavelength λ is 1550nm, pattern PRBS is 1031-1, error rate BER is 10-12, the sensitivity of existing APD-TIA coaxial type photoelectric subassembly is-25.3dBm, can not meet the data transmission applications of distance 80KM. And the APD-TIA coaxial type photoelectric subassembly that the present embodiment provides, its sensitivity is up to-26.7dBm.
The above, above example only in order to technical scheme to be described, is not intended to limit; Although the present invention being described in detail with reference to previous embodiment, it will be understood by those within the art that: the technical scheme described in foregoing embodiments still can be modified by it, or wherein portion of techniques feature is carried out equivalent replacement; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (10)
1. an APD-TIA coaxial type photoelectric subassembly, it is characterised in that include base, described base is provided with trans-impedance amplifier, avalanche diode and diode filter capacitor;
The PINA input of described trans-impedance amplifier is connected with the positive electrical of described avalanche diode by PD+ line; The outfan of described trans-impedance amplifier is electrically connected with two outfan PIN needle of described base by two holding wires; The earth terminal of described trans-impedance amplifier is electrically connected with base by ground wire;The negative electricity of described avalanche diode connects the positive pole of described diode filter capacitor, the minus earth of described diode filter capacitor;
Described PD+ line, described holding wire and described ground wire are the spun gold lead-in wire of arc;
The horizontal length of described PD+ line is less than or equal to 0.3 millimeter, and the camber of described PD+ line is less than or equal to 0.15 millimeter; The horizontal length of described holding wire is less than or equal to 1 millimeter, and the camber of described holding wire is less than or equal to 0.2 millimeter; The horizontal length of described ground wire is less than or equal to 0.4 millimeter, and the camber of described ground wire is less than or equal to 0.15 millimeter.
2. APD-TIA coaxial type photoelectric subassembly according to claim 1, it is characterised in that also include diode build-out resistor;
One end of described diode build-out resistor electrically connects the V of described baseAPDInput PIN needle; The other end of described diode build-out resistor electrically connects the negative pole of described avalanche diode.
3. APD-TIA coaxial type photoelectric subassembly according to claim 1, it is characterised in that described outfan PIN needle is cylindrical;
The diameter of described outfan PIN needle is 0.2 millimeter.
4. APD-TIA coaxial type photoelectric subassembly according to claim 1, it is characterised in that the breakdown voltage of described diode filter capacitor is 63 volts, when 1KHz, 1Vrms, the capacitance of described diode filter capacitor is less than or equal to 470 pico farads.
5. APD-TIA coaxial type photoelectric subassembly according to claim 1, it is characterised in that the breakdown voltage of described power filtering capacitor is 25 volts, and when 1KHz, 1Vrms, capacitance is less than or equal to 1000 pico farads.
6. APD-TIA coaxial type photoelectric subassembly according to claim 1, it is characterised in that the breakdown voltage of described diode build-out resistor is 63 volts, and when 1KHz, 1Vrms, the resistance value of described diode build-out resistor is less than or equal to 100 ohm.
7. APD-TIA coaxial type photoelectric subassembly according to claim 1, it is characterised in that described base is TO-46 base.
8. APD-TIA coaxial type photoelectric subassembly according to claim 1, it is characterised in that also include power filtering capacitor;
The positive electrical of described power filtering capacitor 70 connects the V of described baseCCInput PIN needle, the minus earth of described power filtering capacitor.
9. APD-TIA coaxial type photoelectric subassembly according to claim 7, it is characterised in that the external diameter of described TO-46 base is 4.6 millimeters.
10. APD-TIA coaxial type photoelectric subassembly according to claim 7, it is characterised in that also include pipe cap, described pipe cap is provided with non-spherical lens;
The axis of the axis of described non-spherical lens and described base is on the same line;
The front focal length of described non-spherical lens is 2.7 millimeters, and the rear object distance of described non-spherical lens is 1.24 millimeters.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610239672.7A CN105679746A (en) | 2016-04-15 | 2016-04-15 | APD-TIA coaxial type photoelectric assembly |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610239672.7A CN105679746A (en) | 2016-04-15 | 2016-04-15 | APD-TIA coaxial type photoelectric assembly |
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| CN201610239672.7A Pending CN105679746A (en) | 2016-04-15 | 2016-04-15 | APD-TIA coaxial type photoelectric assembly |
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| CN106019500A (en) * | 2016-08-04 | 2016-10-12 | 东莞铭普光磁股份有限公司 | Coaxial type photoelectric element |
| CN107452815A (en) * | 2017-07-31 | 2017-12-08 | 青岛海信宽带多媒体技术有限公司 | The optical device and optical module of a kind of coaxial packaging |
| CN109390301A (en) * | 2017-08-10 | 2019-02-26 | 中兴光电子技术有限公司 | Avalanche probe |
| CN117079975A (en) * | 2023-07-28 | 2023-11-17 | 厦门亿芯源半导体科技有限公司 | High-speed TIA (wireless local area network) 5G WIFI electromagnetic interference resisting method |
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| CN107452815A (en) * | 2017-07-31 | 2017-12-08 | 青岛海信宽带多媒体技术有限公司 | The optical device and optical module of a kind of coaxial packaging |
| CN109390301A (en) * | 2017-08-10 | 2019-02-26 | 中兴光电子技术有限公司 | Avalanche probe |
| CN117079975A (en) * | 2023-07-28 | 2023-11-17 | 厦门亿芯源半导体科技有限公司 | High-speed TIA (wireless local area network) 5G WIFI electromagnetic interference resisting method |
| CN117079975B (en) * | 2023-07-28 | 2024-04-30 | 厦门亿芯源半导体科技有限公司 | High-speed TIA (wireless local area network) 5G WIFI electromagnetic interference resisting method |
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Application publication date: 20160615 |