CN205263365U - Light path structure of optical receiver - Google Patents
Light path structure of optical receiver Download PDFInfo
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- CN205263365U CN205263365U CN201521136324.4U CN201521136324U CN205263365U CN 205263365 U CN205263365 U CN 205263365U CN 201521136324 U CN201521136324 U CN 201521136324U CN 205263365 U CN205263365 U CN 205263365U
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- photodiode array
- lens
- prism
- optical receiver
- channel structure
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Abstract
The utility model provides a light path structure of optical receiver, include: pottery lock pin, lens, heat sink, demultiplexer, lens array, prism and photodiode array, demultiplexer, lens array and prism set up respectively in on heat sink, lens set up in demultiplexer keeps away from one side of lens array, the pottery lock pin set up in one side of demultiplexer is kept away from to lens, the prism set up in lens array keeps away from one side of demultiplexer, the photodiode array shines the photodiode array of formula for the back of the body, the photodiode array set up in the top of prism. The utility model discloses a photodiode array that the back of the body shines the formula make the light path only from its lower surface incident, so the prism refraction that will solely make progress in the light path for the lower surface vertical incident that the back of the body shines the photodiode array of formula is followed to light, and then changed the light path structure, can make product technology become simple.
Description
Technical field
The utility model relates to a kind of receiver, relates in particular to the simple optical receiver of a kind of technique.
Background technology
Taking video, cloud computing, Internet of Things as the emerging service of representative increases severely to bandwidth demand, promote optical transport network and upgrade fast along the route of 40G, 100G, 100G optical communication network product and technology are ripe gradually.
As one of Primary Component in 100GLR4 module, the element of realizing light splitting in its optical fiber receive module is called DEMUX(De-Multiplexer), be demodulation multiplexer or shunt, DEMUX mainly contains two schemes, and one is AWGPLC(PlanarLightwaveCircuit) be, with waveguiding structure, the mixed light of four kinds of wavelength of input is divided into four tunnels by wavelength. Another is to adopt glass Block-filter, and four each filter of filter are transmissivity and reflectivity of four wavelength period customizations of pin, by four different filter the light of four kinds of wavelength separately.
What existing optical receiver adopted the is photodiode array according to formula just, so, certainly exists so several problems: the first, the photosurface of positive illuminated photodiode array is little generally only has 20um, and coupling technique difficulty is high; The second, the light path complexity of the little prism of assembling with reflecting surface, positioning requirements precision is high; Three, at this photodiode chip plane that lead-in wire the connects optical axis lower than light path place that needs in just according to formula structure, and the lead-in wire joint face that nearly all original paper all connects higher than needs lead-in wire, so, the porcelain mouth of lead-in wire connection device need to descend in darker shell, the risk that makes lead-in wire connect technique strengthens, and easily breaks the porcelain mouth of product or lead-in wire connection device; Four, need the weldering of dark chamber, the lead-in wire connection device of existing dark chamber weldering is expensive, has increased the cost of product.
Summary of the invention
Technical problem to be solved in the utility model is to provide a kind of by the optical receiver that changes light channel structure and then Product Process is simplified.
To this, the utility model provides a kind of light channel structure of optical receiver, comprise: ceramic insertion core, lens, heat sink, demodulation multiplexer, lens arra, prism and photodiode array, described demodulation multiplexer, lens arra and prism be arranged at respectively described heat sink on, described lens are arranged at the side of described demodulation multiplexer away from lens arra, described ceramic insertion core is arranged at the side of described lens away from demodulation multiplexer, described prism is arranged at the side of described lens arra away from demodulation multiplexer, described photodiode array is the photodiode array of back-illuminated type, described photodiode array is arranged at the top of described prism.
Further improvement of the utility model is, described prism comprises reflecting surface, and described reflecting surface is arranged at described prism away from a heat sink side, and described photodiode array is mounted on described reflecting surface.
Further improvement of the utility model is, described prism comprises the reflecting surface of 45 degree.
Further improvement of the utility model is, also comprises optical axis, and the center line of described ceramic insertion core, lens, demodulation multiplexer and lens arra is all positioned on same level line with described optical axis.
Further improvement of the utility model is, also comprises conductive metal wire, and described photodiode array is connected to outside trans-impedance amplifier by conductive metal wire.
Further improvement of the utility model is, one end of described conductive metal wire is arranged at the upper surface of described photodiode array.
Further improvement of the utility model is, also comprises the solder side for connecting conductive metal wire, and the other end of described conductive metal wire is arranged at the upper surface of described solder side.
Further improvement of the utility model is, the horizontal level of described solder side is higher than the horizontal level of optical axis.
Further improvement of the utility model is, described solder side is arranged at described heat sink upper surface.
Further improvement of the utility model is, the upper surface horizontal level of described photodiode array is higher than the horizontal level of described optical axis.
Compared with prior art, the beneficial effects of the utility model are: by the photodiode array of back-illuminated type make light path only from its lower surface incident, so prism upwards reflects light in light path, make the lower surface vertical incidence of light from the photodiode array of back-illuminated type, and then change light channel structure, can make Product Process become simple, concrete advantage is: first, photodiode array etching by back-illuminated type lens arrangement can receive more light energy, be equivalent to increase the photosurface of photodiode, make it be increased to 30um-40um from 20um of the prior art, greatly reduce coupling difficulty, the second, require also greatly to reduce with the placement accuracy between 45 prisms of degree reflecting surface and the photodiode array of back-illuminated type, three, the technique that needs the plane of the photodiode of lead-in wire connection higher than optical axis, lead-in wire to be connected is simple, four, do not need the weldering of dark chamber, use common lead-in wire connection device just can complete the connection technique of conductive metal wire, greatly reduce Product Process complexity, saved man power and material, reduced product cost.
Brief description of the drawings
Fig. 1 is the structural representation of a kind of embodiment of the utility model.
Detailed description of the invention
Below in conjunction with accompanying drawing, preferably embodiment of the present utility model is described in further detail.
As shown in Figure 1, this example provides a kind of light channel structure of optical receiver, comprise: ceramic insertion core 101, lens 102, heat sink 103, demodulation multiplexer 104, lens arra 105, prism 106 and photodiode array 201, described demodulation multiplexer 104, lens arra 105 and prism 106 are arranged at respectively on described heat sink 103, described lens 102 are arranged at the side of described demodulation multiplexer 104 away from lens arra 105, described ceramic insertion core 101 is arranged at the side of described lens 102 away from demodulation multiplexer 104, described prism 106 is arranged at the side of described lens arra 105 away from demodulation multiplexer 104, the photodiode array 201 that described photodiode array 201 is back-illuminated type, described photodiode array 201 is arranged at the top of described prism 106.
This routine described demodulation multiplexer 104 is DEMUX, also claims shunt; Described photodiode array 201 is PD array, namely Photodiode array.
In prior art, just be arranged at the below of prism according to the photodiode array of formula, export from ceramic insertion core at receiving optical signals and arrive lens, the input port that is coupled into demodulation multiplexer through lens makes the optical signal of different wave length be separated through demodulation multiplexer, the light scioptics array of each passage converges the reflection through the prism with reflecting surface again, light just focuses on the upper surface according to the photodiode array of formula vertically downward, the upper surface of described photodiode array is exactly photosurface, completes opto-electronic conversion; This just according to the positive sensitization of photodiode array of formula, photosurface is at the upper surface of photodiode array, and light is directly incident on its upper surface just can complete opto-electronic conversion.
What this example adopted is the photodiode array 201 of back-illuminated type, back side sensitization, light will be from back surface incident, the general lens arrangement that all can have an etching, can further converge light, thereby receive more light energy, its photosurface is the region between etching lens and upper surface generally, upper surface setting is the pin of some electrical connections.
The receiving optical signals that this example is exported from ceramic insertion core 101 arrives lens 102, described optical signal comprises the mixed light of 1295.56nm, 1300.06nm, 1304.59nm and tetra-kinds of wavelength of 1309.14nm, then the input port that is coupled into demodulation multiplexer 104 through lens 102 makes different wave length optical signal through demodulation multiplexer 104 is by separately, the light scioptics array 105 of each passage converges the reflection of passing through again prism 106, on light is vertical, incide on the lens of photodiode array 201 of back-illuminated type, finally converge to its photosurface, complete opto-electronic conversion.
With respect to prior art just according to for the 100GLR4 optical fiber receive module of the photodiode array structures of formula, it is exactly photodiode array 201 and light path part structure that this example has adopted the difference of the 100GLR4 optical fiber receive module maximum of photodiode array 201 structures of back-illuminated type, the photodiode array 201 of back-illuminated type only from its lower surface incident, so prism 106 upwards reflects light in light path, make the lower surface vertical incidence of light from the photodiode array 201 of back-illuminated type, and then changed light path and make Product Process simply a lot.
As shown in Figure 1, this routine described prism 106 comprises reflecting surface, and described reflecting surface is arranged at described prism 106 away from a side of heat sink 103, and described photodiode array 201 is mounted on described reflecting surface; Described prism 106 preferably includes the reflecting surface of 45 degree; This example also comprises optical axis 108, conductive metal wire 110 and solder side 109 for being connected conductive metal wire 110, and the center line of described ceramic insertion core 101, lens 102, demodulation multiplexer 104 and lens arra 105 is all positioned on same level line with described optical axis 108; Described photodiode array 201 is connected to outside trans-impedance amplifier by conductive metal wire 110; One end of described conductive metal wire 110 is arranged at the upper surface of described photodiode array 201; Also comprise, the other end of described conductive metal wire 110 is arranged at the upper surface of described solder side 109; The horizontal level of described solder side 109 is higher than the horizontal level of optical axis 108; Described solder side 109 is arranged at described heat sink 103 upper surface; The upper surface horizontal level of described photodiode array 201 is higher than the horizontal level of described optical axis 108. The quantity of described conductive metal wire 110 is many, and for realizing the connection between photodiode array 201 and TIA, described TIA is Trans-impedanceamplifier.
This example by the photodiode array of back-illuminated type make light path only from its lower surface incident, so prism 106 upwards reflects light in light path, make the lower surface vertical incidence of light from the photodiode array 201 of back-illuminated type, thereby having changed light channel structure makes Product Process become simple, concrete advantage is: first, photodiode array 201 etchings by back-illuminated type lens 102 structures can receive more light energy, be equivalent to increase the photosurface of photodiode, make it be increased to 30um-40um from 20um of the prior art, greatly reduce coupling difficulty, the second, the placement accuracy between the prism 106 with 45 degree reflectings surface and the photodiode array 201 of back-illuminated type requires also greatly to reduce, three, the technique that needs the plane of the photodiode of lead-in wire connection higher than optical axis 108, lead-in wire to be connected is simple, as can be seen from Figure 1, the upper surface of electric diode array 201 and solder side 109 are all higher than the optical axis 108 at the center of optical element line places such as described ceramic insertion core 101, lens 102, demodulation multiplexer 104 and lens arra 105, four, do not need the weldering of dark chamber, because this routine solder side 109 than prior art too high about 0.85mm, therefore, use common lead-in wire connection device just can complete the connection technique of conductive metal wire 110, greatly reduce Product Process complexity, save man power and material, reduced product cost, especially be suitable in the optical receiver of 100G.
The detailed description of the invention of the above is preferred embodiments of the present utility model; not limit concrete practical range of the present utility model with this; scope of the present utility model comprises and is not limited to this detailed description of the invention, and the equivalence that all shapes according to the utility model, structure are done changes all in protection domain of the present utility model.
Claims (10)
1. the light channel structure of an optical receiver, it is characterized in that, comprise: ceramic insertion core, lens, heat sink, demodulation multiplexer, lens arra, prism and photodiode array, described demodulation multiplexer, lens arra and prism be arranged at respectively described heat sink on, described lens are arranged at the side of described demodulation multiplexer away from lens arra, described ceramic insertion core is arranged at the side of described lens away from demodulation multiplexer, described prism is arranged at the side of described lens arra away from demodulation multiplexer, described photodiode array is the photodiode array of back-illuminated type, described photodiode array is arranged at the top of described prism.
2. the light channel structure of optical receiver according to claim 1, is characterized in that, described prism comprises reflecting surface, and described reflecting surface is arranged at described prism away from a heat sink side, and described photodiode array is mounted on described reflecting surface.
3. the light channel structure of optical receiver according to claim 2, is characterized in that, described prism comprises the reflecting surface of 45 degree.
4. according to the light channel structure of the optical receiver described in claims 1 to 3 any one, it is characterized in that, also comprise optical axis, the center line of described ceramic insertion core, lens, demodulation multiplexer and lens arra is all positioned on same level line with described optical axis.
5. the light channel structure of optical receiver according to claim 4, is characterized in that, also comprises conductive metal wire, and described photodiode array is connected to outside trans-impedance amplifier by conductive metal wire.
6. the light channel structure of optical receiver according to claim 5, is characterized in that, one end of described conductive metal wire is arranged at the upper surface of described photodiode array.
7. the light channel structure of optical receiver according to claim 6, is characterized in that, also comprises the solder side for connecting conductive metal wire, and the other end of described conductive metal wire is arranged at the upper surface of described solder side.
8. the light channel structure of optical receiver according to claim 7, is characterized in that, the horizontal level of described solder side is higher than the horizontal level of optical axis.
9. the light channel structure of optical receiver according to claim 7, is characterized in that, described solder side is arranged at described heat sink upper surface.
10. the light channel structure of optical receiver according to claim 4, is characterized in that, the upper surface horizontal level of described photodiode array is higher than the horizontal level of described optical axis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521136324.4U CN205263365U (en) | 2015-12-30 | 2015-12-30 | Light path structure of optical receiver |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521136324.4U CN205263365U (en) | 2015-12-30 | 2015-12-30 | Light path structure of optical receiver |
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| Publication Number | Publication Date |
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| CN205263365U true CN205263365U (en) | 2016-05-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201521136324.4U Expired - Fee Related CN205263365U (en) | 2015-12-30 | 2015-12-30 | Light path structure of optical receiver |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109683216A (en) * | 2019-01-18 | 2019-04-26 | 武汉光迅科技股份有限公司 | A kind of asymmetric lens and optical device |
| CN110888203A (en) * | 2018-11-28 | 2020-03-17 | 祥茂光电科技股份有限公司 | Photodiode array with integrated backside lens and multichannel transceiver module implementing the same |
-
2015
- 2015-12-30 CN CN201521136324.4U patent/CN205263365U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110888203A (en) * | 2018-11-28 | 2020-03-17 | 祥茂光电科技股份有限公司 | Photodiode array with integrated backside lens and multichannel transceiver module implementing the same |
| CN110888203B (en) * | 2018-11-28 | 2022-10-28 | 祥茂光电科技股份有限公司 | Photodiode array with integrated backside lens and multichannel transceiver module implementing the same |
| CN109683216A (en) * | 2019-01-18 | 2019-04-26 | 武汉光迅科技股份有限公司 | A kind of asymmetric lens and optical device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170509 Address after: 518000, Guangdong, Nanshan District, Taoyuan Shenzhen street, 1213 cents Xian Road, the crown Yao Ling Industrial Zone, 2 District, 7, 1-3, 1268 cents Xian Road, the crown of red ridge industrial north 4, 2 Building East Patentee after: XGIGA COMMUNICATION TECHNOLOGY Co.,Ltd. Address before: 518000 Kam B-1001, Kam Kam garden, Kam Lung garden, Shenzhen, Guangdong, Nanshan District Patentee before: Wu Shuai |
|
| TR01 | Transfer of patent right | ||
| CP02 | Change in the address of a patent holder |
Address after: 518000 room a1101201 301 401 501, building 13, Junfeng Industrial Park, Chongqing Road, Heping community, Fuhai street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: XGIGA COMMUNICATION TECHNOLOGY Co.,Ltd. Address before: 518000, Guangdong, Nanshan District, Taoyuan Shenzhen street, 1213 cents Xian Road, the crown Yao Ling Industrial Zone, 2 District, 7, 1-3, 1268 cents Xian Road, the crown of red ridge industrial north 4, 2 Building East Patentee before: XGIGA COMMUNICATION TECHNOLOGY Co.,Ltd. |
|
| CP02 | Change in the address of a patent holder | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160525 Termination date: 20211230 |
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| CF01 | Termination of patent right due to non-payment of annual fee |