CN102412240A - APD-TIA (Avalanche Photodiode-Transfer-Impedance Amplifier) coaxial photoelectric module with temperature control function and fabrication method thereof - Google Patents
APD-TIA (Avalanche Photodiode-Transfer-Impedance Amplifier) coaxial photoelectric module with temperature control function and fabrication method thereof Download PDFInfo
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- CN102412240A CN102412240A CN2011103099636A CN201110309963A CN102412240A CN 102412240 A CN102412240 A CN 102412240A CN 2011103099636 A CN2011103099636 A CN 2011103099636A CN 201110309963 A CN201110309963 A CN 201110309963A CN 102412240 A CN102412240 A CN 102412240A
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
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- H01L2924/19101—Disposition of discrete passive components
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- H01L2924/30111—Impedance matching
Abstract
The invention discloses an Avalanche Photodiode-Transfer-Impedance Amplifier (APD-TIA) coaxial photoelectric module with a temperature control function and a fabrication method thereof. The APD-TIA coaxial photoelectric module mainly comprises a TO56 base with eight pins plus one pin, a thermoelectric cooler (TEC), an AIN (aluminium nitride) ceramic circuit substrate, an APD, a TIA, a RC (resistor-capacitor) filter module, a thermistor, a first filter capacitor and a second filter capacitor, wherein the TEC as a first layer is attached on the upper surface of the coaxial TO56 base, the AIN ceramic circuit substrate as a second layer is attached on the upper surface of the TEC, and the ADP, the TIA, the thermistor, the RC filter module, the first filter capacitor and the second filter capacitor are arranged on the surface of the AIN ceramic circuit substrate to form a third layer. The coaxial photoelectric module has the advantages of small size, good temperature characteristic, stable photoelectric properties and high reliability.
Description
Technical field
The present invention relates to the high-speed optical signal receiving unit designing technique of fiber optic communication field, relate in particular to a kind of avalanche multiplication type photodiode (APD)-transimpedance preamplifier (TIA) coaxial type photoelectric subassembly and manufacturing approach with function of temperature control.
Background technology
Because the continuous progress of the market demand and photoelectron and integrated circuit technique, the downlink transfer speed of optical access network E-PON and G-PON has reached 10Gb/s at present.In optical access network, receive the light signal that transmits from optical fiber, need adopt the photoelectric subassembly of the miniaturization sealing of forming by photodiode and low-noise preamplifier at the light-receiving front end.
Photodiode is distinguished by structure and performance index, mainly contains two kinds of forms: a kind of is the photodiode (PIN-PD) with PIN type, and another kind is avalanche multiplication photodiode (APD).PIN-PD only has the opto-electronic conversion effect; And APD not only has the opto-electronic conversion effect, and inside also has the photomultiplier transit effect.They are combined with transimpedance preamplifier (TIA, Transfer-Impedance Amplifier) respectively, can constitute PIN-TIA photoelectric subassembly and APD-TIA photoelectric subassembly.These photoelectric subassemblys divide from packing forms, further can be divided into butterfly type, coaxial TO type.Because coaxial TO type photoelectric subassembly has advantages such as volume is little, simple in structure, cheap, thereby is widely used.And PIN-TIA coaxial type photoelectric subassembly receiving sensitivity is high not as APD-TIA coaxial type photoelectric subassembly.This is because APD inside can provide 8～12 times avalanche optoelectronic multiplication.Compare with speed, the essentially identical PIN-TIA assembly of TIA technical indicator, the receiving sensitivity of APD-TIA coaxial type photoelectric subassembly will exceed 6～8dBm.So in the Optical Receivers of high speed, middle and long distance, front end assemblies adopts APD-TIA coaxial type photoelectric subassembly usually.
Though APD-TIA coaxial type photoelectric subassembly optical receiver sensitivity is higher than PIN-TIA assembly, aspect consistency of performance and ease of use, be not so good as the PIN-TIA assembly.APD is fit to puncture voltage (V
b) device that in 0.90～0.95V scope, uses, because APD internal structure and technology making more complicated, critical process is restive, causes the performance characteristics of each APD tube core to be not quite similar, and like puncture voltage deviation is to a certain degree often arranged; And APD is relatively responsive to temperature, and when higher or photoelectric current is big when ambient temperature, not only puncture voltage will change (minimizing), the photomultiplier transit factor (M
p) reduce, and excessive multiplication noise will increase, thus cause optical receiver sensitivity to descend.Though automatic gain of light control (AGC) can be set in the Optical Receivers with APD-TIA photoelectric subassembly, and it is inoperative to limit luminous sensitivity., transmission range lower in transmission rate is short, the less demanding occasion of optical receiver sensitivity, because APD-TIA assembly caloric value and little, optical receiver sensitivity generally has bigger surplus capacity, and temperature control seems not to be very necessary.But up to more than the 10Gb/s, the optical fiber receive module of transmission range more than 20 km, the stable of the optical receiver sensitivity of APD-TIA assembly has been exactly a key issue concerning speed.
In general, influencing the stable principal element of APD-TIA assembly optical receiver sensitivity, is the stability of APD just bias voltage, light multiplication factor and excessive multiplication noise.Here, said APD just bias voltage, the bias voltage of correspondence when promptly obtaining the optimal light multiplier effect.Therefore, the optimum sensitivity that the APD-TIA assembly is obtained not only need be sought the bias voltage under the optimal light multiplication factor, also will keep the basicly stable of APD-TIA assembly temperature.Usually require the case temperature of APD-TIA assembly should remain in 15 ℃～35 ℃ scopes Celsius.Especially when ambient temperature surpassed 70 ℃, inner APD-TIA temperature still need maintain in 15 ℃～35 ℃ scopes.So, guarantee the temperature stability of the APD-TIA coaxial type photoelectric subassembly of 10Gb/s, exactly a key technical problem that needs to be resolved hurrily.
The mode of existing solution APD-TIA assembly temperature stability and best multiplication problem, the method that adopts the just bias voltage temperature to compensate usually.Here, the compensation of said just bias voltage temperature is the APD just bias voltage that arrives according to actual measurement and the relation of temperature, writes it in the special-purpose single-chip microcomputer memory; According to the compensation requirement under the specified temp, work out just bias voltage-temperature control program, and be kept in the EEPROM (EEPROM) then; At last, utilize the output of this procedure auto-control bias voltage.Its main process is: the APD just bias voltage that will under different temperatures, record is in advance noted, and is kept in the assembly single-chip microcomputer memory; In working order down,, compare, make the judgement of quantum of compensation with the just bias voltage in the single-chip microcomputer memory and the relation of temperature according to the measured temperature of temperature sensor; Operation is kept at the just bias voltage-temperature control program among the EEPROM then, adopts single-chip microcomputer to control.Analog/digital (A/D) conversion method that Here it is controls by single-chip microcomputer.Therefore, carry out precision temperature compensation and effectively control, will note APD different temperatures and just bias voltage relationship in advance.It is thus clear that, in this temperature compensation act, there are two problems:
The first, to survey the temperature-just bias voltage relationship of each APD in whole operating temperature range in advance; Because its implementation process takes time and effort; In fact feasible degree is also little, and owing to restrictions such as cost (comprising testing cost) and delivery dates, also can not survey each APD.If but do not do this test; But replace actual temperature-bias relation of each APD with the temperature of statistical-just bias voltage relationship; And statistical temperature-just bias voltage relationship carried out linearization process, become pervasive temperature-optimal bias relation.The result who does like this will cause control deviation, thereby cause some optical fiber receive module change of sensitivity, will produce compensation under the serious situation and lose efficacy and error code, and this must cause that the total failure rate of assembly will increase.
The second, this temperature-slideback is difficult in reaching optimal light multiplication state in the full temperature scope of same assembly.Because it is after temperature-the just bias voltage relationship is made linearization process, bigger at some temperature range possible deviation.Deviation is arranged slightly, and optical receiver sensitivity will change.And the noise that causes under the high temperature also can't compensate.
Summary of the invention
In view of this; Main purpose of the present invention is to provide a kind of avalanche multiplication type photodiode (APD) with function of temperature control-transimpedance preamplifier (TIA) coaxial type photoelectric subassembly and manufacturing approach; Adopt TEC, temperature test circuit and control circuit to control and keep the substantially constant of APD die temperature; Or the inner ADP die temperature of coaxial TO type photoelectric subassembly is maintained in 15 ℃～35 ℃ scopes all the time; So that the good stable maintenance of optimum Working of APD debugging, and then the sensitivity of light stable receiving unit.
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of avalanche multiplication type photodiode APD-transimpedance preamplifier TIA coaxial type photoelectric subassembly with function of temperature control, this photoelectric subassembly mainly comprises TO56 pedestal, TEC TEC, AlN ceramic circuit board, avalanche photodide APD, transimpedance amplifier TIA, RC filtering unit, thermistor, first filter capacitor, second filter capacitor of 8+1 pin; Wherein, said TEC be attached to said coaxial type TO56 pedestal upper surface as ground floor; The upper surface of said TEC is close to the AIN ceramic circuit board as the second layer; Surface at said AIN ceramic circuit board constitutes the 3rd layer by ADP, TIA, thermistor, RC filtering unit, first filter capacitor and second filter capacitor.
Wherein, said photoelectric subassembly further comprises the pipe cap that is positioned at said the 3rd layer band non-spherical lens.
In the 8+1 pin of said coaxial type TO56 pedestal; Wherein 6 pins are vertical with said pedestal base plane; And be respectively said TEC, APD, TIA, thermistor power supply, and other 2 radio frequency output pins as this APD-TIA photoelectric subassembly ,+1 pin is a TO earthing of casing pin.
Said coaxial type TO56 pedestal is provided with the control circuit of being made up of TEC, thermistor and peripheral circuit.
Said pedestal lower surface is carved and is scraped out concave-convex type, and carries out the periphery blackout and handle.
The AlN ceramic circuit board is housed on the chill surface of said TEC.
The circuit transition piece further is housed on the said ceramic substrate.
Be laid with the put area of APD tube core, TIA integrated circuit, thermistor, filtering unit on the said ceramic substrate, also be manufactured with supply lines, holding wire, microstrip transmission line and ground wire.
Also be provided with the alignment mark of APD die center location on the said AlN ceramic circuit board, be used for die center and aim at the non-globe lens central axis of pipe cap.
A kind of manufacturing approach of the coaxial photoelectric subassembly of APD-TIA with function of temperature control comprises the steps:
A, under condition Celsius 280 ℃, adopt golden tin (AuSn) scolder, TEC vacuum-sintering is had on the TO56 pedestal of 8+1 pin;
B, under condition Celsius 139 ℃, adopt the weldering of bismuth tin (BiSn) eutectic that the AlN ceramic circuit board is fixed on the chill surface of TEC, and on this substrate the welding circuit transition block;
C, according to the alignment mark of the APD die center that is provided with on said AlN ceramic circuit board location; Adopt conducting resinl that the APD tube core is installed in assigned position on the AlN ceramic circuit board; And in the nitrogen of drying, place under 85 ℃ of temperature and toasted 2 hours, carry out the DC characteristic test then; And adopt same quadrat method, TIA, thermistor, first filter capacitor, second filter capacitor are installed in assigned position on the said AlN ceramic circuit board, and carry out hot setting;
D, last adopts the spun gold thermocompression bonding that the pin of above-mentioned parts and this photoelectric subassembly is coupled together.
The APD-TIA coaxial type photoelectric subassembly and the manufacturing approach of band function of temperature control provided by the present invention have the following advantages:
1) APD temperature precision is controlled.In the very little coaxial type TO photoelectric subassembly in inner space, placed very little TEC (TEC) and the temperature element of volume, (in the module) is provided with temperature-control circuit outside.Like this,, can control in real time in the inner APD temperature of TO, the deviation that does not exist in the temperature compensation act just bias voltage and temperature-compensating in real time to exist, thus can guarantee that the APD die temperature is constant in prescribed limit.
2) optical receiver sensitivity is stable.The receiving sensitivity of Optical Receivers is basically by the photoelectric subassembly decision that contains APD-TIA.If APD and TIA temperature constant, and in the temperature range of regulation, work, so, it is stable that this optical receiver sensitivity performance just can keep, and this transmission to high-speed optical signal is crucial.
3) assembly life-span is long, reliability is high.Photoelectric subassembly and optical module are worked under long term high temperature, can cause light, electrical property degeneration, thereby finish its working life too early.Keeping crucial photoelectric device in normal temperature environment (15 ℃～35 ℃) work down, is to prolong the effective method of working life.The 10Gb/s APD-TIA coaxial type TO56 photoelectric subassembly that adopts technology of the present invention to make can be worked under the normal temperature scope of regulation for a long time.
4) volume little, at a high speed, high density.Small size is the target that optical communication is pursued with optical module.Coaxial type photoelectric subassembly according to the invention; In TO56 pedestal space; High Density Packaging TEC (TEC), AlN ceramic substrate, APD, TIA, thermistor, RC filtering unit, its volume be have function of temperature control, XMD type light emission component TOSA 1/ 8～1/4.
5) photoelectric subassembly that utilizes technology of the present invention to make can carry out thermoelectric method of temperature-control by, has to transfer to survey to save time, monitor real-time advantage; Be each APD-TIA photoelectric subassembly, can pass through following 15 ℃～35 ℃ concise and to the point debugging of normal temperature, find out optimum Working and technical parameter; And in work thereafter; Through automatic temperature-adjusting control (ATC), it is in and keeps preferable operating state, do not exist and adopt noise problem under compensate that pervasive temperature-the just bias voltage relationship brings and the high temperature in the temperature compensation act; Thereby long working life, reliability is high.
Description of drawings
Fig. 1 is the inner assembling of the 10Gb/s APD-TIA coaxial type TO56 photoelectric subassembly with function of temperature control sketch map of embodiments of the invention;
Fig. 2 is said coaxial type TO56 photoelectric subassembly pedestal components and parts distribution map;
Fig. 3 is the pin layout viewing of coaxial type TO56 photoelectric subassembly;
Fig. 4 is the TEC structural representation;
Fig. 5 is an AlN ceramic circuit board circuit diagram;
Fig. 6 is the APD chip structure sketch map of 10Gb/s;
Fig. 7 is coaxial type TO56 photoelectric subassembly pipe cap figure.
[critical piece symbol description]
1: TO56 pedestal with 8+1 pin;
2: TEC (TEC, ThermoElectrisic Cooler);
The 3:AlN ceramic circuit board;
4: eight external metal pins;
5:10Gb/s avalanche photodide (APD, Avalanche Photo Diode);
6:10Gb/s transimpedance amplifier (TIA, Transfer-Impedance Amplifier);
The 7:RC filtering unit;
8: thermistor;
9: the first filter capacitors;
10: the second filter capacitors;
11: the pipe cap of band non-spherical lens.
Embodiment
Below in conjunction with accompanying drawing and embodiments of the invention photoelectric subassembly of the present invention and manufacturing approach are done further detailed explanation.
With existing 10Gb/s APD-TIA coaxial type TO56 photoelectric subassembly is example, and this photoelectric subassembly has only 4 pins.Because the TO inner space is very narrow and small, be placed in TO56 inside to a plurality of components and parts such as TEC, thermistor, 10Gb/s APD and 10Gb/s TIA, must solve following key issue:
A) the TO shell should have 8 pins (not comprising earthing of casing pin) owing to need lay 4 components and parts again, but also must have two independently pin export as radio frequency, therefore, existing 4 pins can not be satisfied the demand;
B) the TO base interior should be able to be held TEC, and this is the most basic condition;
C) TEC can satisfy the dissipation power requirement of loosing, and this is the requirement of the key technical indexes;
D) TEC is last should have the good ceramic circuit board of heat conduction, on substrate, can assemble components and parts such as APD, TIA;
E) requirement of heat radiation should be satisfied in the shell outside;
F) technological feasibility of considered High Density Packaging comprises problems such as anti-electromagnetic interference, heat conduction;
G) should solve 10 Gb/s high-speed radio-frequency signals output problem, comprise problems such as bandwidth, impedance matching.
The present invention important solving the problems of the technologies described above, wherein:
Be temperature, the optical receiver sensitivity stability problem of solution 10Gb/s APD-TIA coaxial type TO56 photoelectric subassembly, and reach the effect of miniaturization, practicability.Photoelectric subassembly of the present invention has been set up specific pin according to existing TO56 base size; Through the required dissipation power of primary Calculation, find the TEC (TEC) that satisfies dissipation power and small size requirement, and designed the AlN ceramic circuit board.Consider the riding position and the size of the inner pedestal components and parts of TO, adopt the mode of the outside heat radiation of shell, and utilized the packaging technology of high density components and parts.
Adopt the 10Gb/s APD-TIA coaxial type TO56 photoelectric subassembly of technical scheme design of the present invention, its internal base plate area and volume and general T O56 are similar; But component number, arrangement mode and number of pin and general optical fiber receive module differ widely on the inner pedestal, and the heat radiation form on its shell surface is also different with general TO optical fiber receive module.In narrow and small TO56 space, space, so many components and parts be assemble, and pin and heat dissipation problem solved, this is former not to have.
Particularly, the method that the 10Gb/s APD-TIA coaxial type TO56 photoelectric subassembly with temperature controlled function according to the invention is adopted the steps include:
The first, calculate the required dissipation power of photoelectric subassembly and provide the TEC maximum diffipation power, be specially:
According to measured data; And learn through calculating: the required maximum diffipation power of 10Gb/s APD is 35mW; The required maximum diffipation power of 10Gb/s TIA is 3.3 * 0.12 ≈ 400mW; The optical fiber receive module maximum diffipation power is 440～450mW, considers heat dissipation problem under the hot environment, and the present invention considers that the maximum diffipation power of TEC is 700 mW.
The second, seek the TEC that satisfies dissipation power and volume, be specially:
Consider practicability, cost and standardization issue, TEC does not make particular design; We have adopted the TEC of a latest fashion, and its dissipation power is 700mW, and volume is 1.80 mm * 2.65 mm.Satisfy set designing requirement fully.
The 3rd, consider TO version and required number of pin and arrange design, consider practicability, cost and standardization issue again, design in conjunction with existing TO56 version.Existing TO56 interior space dimension satisfies the requirement of laying of TEC and other components and parts basically; But general T O56 has only 4 pins at most, can not satisfy and adopt technical scheme design of the present invention to have the requirement of the 10Gb/s APD-TIA coaxial type photoelectric subassembly of temperature controlled function.Because photoelectric subassembly of the present invention, inside should be placed APD tube core, TIA-IC (power supply and radio frequency output), thermistor and RC filtering unit, two radio frequency output pins must be arranged also.Therefore, 8 pins and 1 grounding leg should be arranged at least.For this reason, specialized designs of the present invention have the TO56 pedestal of 8+1 pin, and link up with TO supplier, obtained supplier's approval.This just provides a feasible approach for the present invention's practicability from now on reducing cost.
The 4th, adopt temperature control measures such as TEC, thermistor to realize APD automatic temperature-adjusting control (ATC).And APD ATC is a core of the present invention.
Inner at photoelectric subassembly of the present invention, temperature sensor, TEC are set, at assembly outside (in the module) the bridge type temperature-adjusting circuit is set, promptly constitute the ATC circuit structure.Wherein temperature sensor adopts thermistor, and the temperature refrigerator is exactly TEC.When variations in temperature, through thermistor temperature detecting, the bridge type temperature-adjusting circuit compares, and provides TEC adjustment current-order, the supply current of TEC is changed, thereby control TEC chill surface temperature delicately, reaches the purpose of also accurate in real time control APD temperature.ATC technology that Here it is.
The 5th, design heat radiation, insulation and the good ceramic circuit board of microwave property.The APD-TIA assembly has also been considered insulation, microwave property requirement except that having considered that heat radiation requires, adopted insulation, pcb board that microwave property is good.Usually the PCB substrate is to adopt polytetrafluoroethylene PCB or 99% Al
2O
3Ceramic, its heat radiation and microwave property can not satisfy the requirement of 10Gb/s high speed transmission of signals, and the AlN ceramic substrate that the present invention adopts has good heat radiation, insulation and microwave property, can satisfy the above high speed transmission of signals requirement of 10Gb/s.The present invention has designed required AlN ceramic substrate, and on this substrate, has designed components and parts arrange position and supply line, signal line and ground wire.For the high-speed line holding wire, also to consider resistance matching problem, problems of Signal Integrity such as anti-electromagnetic interference.
The 6th, increase the pedestal area and carry out the surface blackening processing to realize the good external heat radiation.Coaxial type TO photoelectric subassembly cumulative volume is very little, and area of dissipation is also very little.In order to strengthen radiating effect, must increase TO surface area and heat radiation radianting capacity as much as possible, for this reason, carry out mechanical carving groove at the TO base part and handle, and carry out the top layer blackout at base part and handle.
The 7th, carry out the consideration of the feasibility of technology making.When the components and parts of assembling photoelectric subassembly inside, consider the feasibility that technology is made; Because different components and parts welding temperatures, adhesive method maybe be different.Among the present invention, adopt golden tin (AuSn) scolder to have TEC vacuum-sintering on the TO56 pedestal of 8+1 pin for 280 ℃ earlier, adopt 139 ℃ of bismuth tin (BiSn) eutectic welderings to be fixed on the AlN ceramic circuit board on the chill surface of TEC then; Adopt other components and parts of conducting resinl bonding then.
The 8th, adopt non-spherical lens to improve coupling efficiency.For improving the coupling efficiency that input optical signal gets into the APD photosurface, the focusing optical element that embeds in the TO pipe cap adopts non-spherical lens.
As shown in Figure 1; 10Gb/s APD-TIA coaxial type TO56 the photoelectric subassembly that has function of temperature control; By coaxial type TO56 pedestal 1, TEC (TEC with particular design 8+1 pin; ThermoElectrisic Cooler) 2 the compositions such as pipe cap 11 of 10Gb/s avalanche photodide (APD, Avalanche Photo Diode) 5,10Gb/s transimpedance amplifier (TIA) 6, AlN ceramic circuit board 3, thermistor 8, RC filtering unit 7, first filter capacitor 9, second filter capacitor 10 and band non-spherical lens.
Fig. 2 is 10Gb/s APD-TIA coaxial type TO56 photoelectric subassembly pedestal components and parts distribution maps; As shown in Figure 2; This round TO56 pedestal 1 diameter is 5.6 mm; The inner effective area that can place components and parts is merely 2.0mm * 2.8 mm, in this narrow area, is divided into three layers, lays 8 components and parts that vary in size respectively.
Wherein, to be close to the upper surface of coaxial type TO56 pedestal 1 be ground floor to TEC2; At the upper surface of this TEC2, being close to AlN ceramic circuit board 3 is the second layer; On the surface of this ceramic circuit board 3, assemble 10Gb/s APD 5 respectively, it is a not naked pipe core of encapsulation; In addition, also lay 10Gb/s and go out (TIA) 6, thermistor 8, RC filtering unit 7, first filter capacitor 9, second filter capacitor 10, they constitute the 3rd layer on the round TO56 pedestal 1.
Fig. 3 is the pin configuration figure of 10Gb/s APD-TIA coaxial type TO56 photoelectric subassembly, and is as shown in Figure 3, is respectively front view and bottom view.Be distributed with 8 pins of particular design on it, wherein 6 pins are vertical with the pedestal base plane, give TEC, APD, TIA, thermistor power supply respectively, and leg diameter is 0.2mm; Other 2 pins are as the radio frequency output pin of 10Gb/s APD-TIA photoelectric subassembly, and its diameter is 0.4mm; And+1 pin (not marking among the figure) is the grounding pin of TO shell.
Wherein, in eight metal pins, 4 (1), 4 (2) pins for TEC2 power supply, this pin rugosity (diameter) should satisfy and flows through maximum current (about 350mA) requirement, satisfies the requirement of dispelling the heat; 4 (3), 4 (4) is the radiofrequency signal output requirement of transimpedance amplifier (TIA) 6, promptly satisfies bandwidth and impedance matching requirement; 4 (5) for giving the pin of TIA6 direct current supply through RC filtering unit 7; 4 (6) are the energization pins to 10Gb/sAPD 5 bias voltages; 4 (7), 4 (8) is the pinouts of thermistor 8, because this thermistor is a counter-jib of Wien bridge circuit, so need establish two pins of going out.
Fig. 4 is the used TEC2 structural representation of 10Gb/s APD-TIA coaxial type TO56 photoelectric subassembly, and it is divided into front view and end view.TEC overall dimension is 1.8mm * 2.6mm * 0.8 mm, and its maximal work voltage and current is respectively 2.2V and 0.35A, and maximum diffipation power is 700mW.As temperature-sensing element, the thermistor nominal resistance is 10K Ω, and its overall dimension is 0.3 mm * 0.8 mm.
Fig. 5 is the used AlN ceramic circuit board of a 10Gb/sAPD-TIA coaxial type TO56 photoelectric subassembly circuit diagram; As shown in Figure 5; Be laid with the put area of 10Gb/s APD tube core, 10Gb/s TIA integrated circuit (IC), thermistor, RC filtering unit on the ceramic substrate, also be manufactured with supply lines, holding wire, microstrip transmission line and ground wire.The AlN ceramic circuit board is provided with the alignment mark of 10Gb/s APD die center location, so that non-globe lens central axis is aimed in die center and the pipe cap.Centring allows peak excursion less than ± 10 microns.
Assembling for components and parts on the AlN ceramic circuit board is a manufacture process, the steps include:
At first, adopt AuSn scolder and vacuum-sintering (280 ℃) technology, on TEC vacuum-sintering TO56 pedestal;
Secondly, adopt BiSn eutectic weldering (under 139 ℃ of conditions Celsius) to be fixed on the AlN ceramic circuit board on the chill surface of TEC, and on its substrate the welding circuit transition block.
Then, according to alignment mark, adopt conducting resinl to be installed in assigned position on the AlN ceramic circuit board to 10Gb/s APD tube core, and in filling drying nitrogen, toasted 2 hours down at 85 ℃; Carry out the DC characteristic test then; Adopt same quadrat method, be installed in assigned position on the AlN ceramic circuit board to 10Gb/s TIA, thermistor, filtering unit, and make necessary electric performance test.It should be noted that to increasing the TO56 radiating effect, carve at the pedestal lower surface and scrape out concave-convex type, and carry out the periphery blackout and handle.
Adopt conducting resinl to be placed in assigned position to 10Gb/s APD, TIA, thermistor and first, second filter capacitor respectively again, and pass through hot setting.
At last, adopt the spun gold thermocompression bonding to couple together corresponding components and parts.10Gb/s APD-TIA coaxial type TO56 photoelectric subassembly with function of temperature control of the present invention has that volume is little, good temp characteristic, photoelectric properties are stable and characteristics such as reliability height.
Fig. 6 is a 10Gb/s APD chip structure sketch map.In when assembling, should be according to the APD tube core alignment mark that is provided with on the AlN ceramic circuit board, so that non-globe lens central axis is aimed in die center and the pipe cap, this is one of key of technology making.
Fig. 7 is coaxial type TO56 photoelectric subassembly pipe cap figure.For improving optical coupling efficiency, the focusing optical element adopts non-spherical lens in the pipe cap.Being coupled and aligned with laser welding also is the key of technology making, should accurately debug, and operates meticulously.
The above is merely preferred embodiment of the present invention, is not to be used to limit protection scope of the present invention.
Claims (10)
1. avalanche multiplication type photodiode APD-transimpedance preamplifier TIA coaxial type photoelectric subassembly with function of temperature control; It is characterized in that this photoelectric subassembly mainly comprises TO56 pedestal, TEC TEC, AlN ceramic circuit board, avalanche photodide APD, transimpedance amplifier TIA, RC filtering unit, thermistor, first filter capacitor, second filter capacitor of 8+1 pin; Wherein, said TEC be attached to said coaxial type TO56 pedestal upper surface as ground floor; The upper surface of said TEC is close to the AIN ceramic circuit board as the second layer; Surface at said AIN ceramic circuit board constitutes the 3rd layer by ADP, TIA, thermistor, RC filtering unit, first filter capacitor and second filter capacitor.
2. the APD-TIA coaxial type photoelectric subassembly of band function of temperature control as claimed in claim 1 is characterized in that said photoelectric subassembly further comprises the pipe cap that is positioned at said the 3rd layer band non-spherical lens.
3. the APD-TIA coaxial type photoelectric subassembly of band function of temperature control as claimed in claim 1; It is characterized in that; In the 8+1 pin of said coaxial type TO56 pedestal, wherein 6 pins are vertical with said pedestal base plane, and are respectively said TEC, APD, TIA, thermistor power supply; Other 2 radio frequency output pins as this APD-TIA photoelectric subassembly ,+1 pin is a TO earthing of casing pin.
4. the APD-TIA coaxial type photoelectric subassembly of band function of temperature control as claimed in claim 1 is characterized in that, said coaxial type TO56 pedestal is provided with the control circuit of being made up of TEC, thermistor and peripheral circuit.
5. the APD-TIA coaxial type photoelectric subassembly of band function of temperature control as claimed in claim 1 is characterized in that, said pedestal lower surface is carved and scraped out concave-convex type, and carries out the periphery blackout and handle.
6. the APD-TIA coaxial type photoelectric subassembly of band function of temperature control as claimed in claim 1 is characterized in that, the AlN ceramic circuit board is housed on the chill surface of said TEC.
7. the APD-TIA coaxial type photoelectric subassembly of band function of temperature control as claimed in claim 1 is characterized in that, the circuit transition piece further is housed on the said ceramic substrate.
8. like the APD-TIA coaxial type photoelectric subassembly of claim 6 or 7 described band function of temperature control; It is characterized in that; Be laid with the put area of APD tube core, TIA integrated circuit, thermistor, filtering unit on the said ceramic substrate, also be manufactured with supply lines, holding wire, microstrip transmission line and ground wire.
9. like the APD-TIA coaxial type photoelectric subassembly of claim 1 or 6 described band function of temperature control; It is characterized in that; Also be provided with the alignment mark of APD die center location on the said AlN ceramic circuit board, be used for die center and aim at the non-globe lens central axis of pipe cap.
10. the manufacturing approach with the coaxial photoelectric subassembly of APD-TIA of function of temperature control is characterized in that, comprises the steps:
A, under condition Celsius 280 ℃, adopt golden tin (AuSn) scolder, TEC vacuum-sintering is had on the TO56 pedestal of 8+1 pin;
B, under condition Celsius 139 ℃, adopt the weldering of bismuth tin (BiSn) eutectic that the AlN ceramic circuit board is fixed on the chill surface of TEC, and on this substrate the welding circuit transition block;
C, according to the alignment mark of the APD die center that is provided with on said AlN ceramic circuit board location; Adopt conducting resinl that the APD tube core is installed in assigned position on the AlN ceramic circuit board; And in the nitrogen of drying, place under 85 ℃ of temperature and toasted 2 hours, carry out the DC characteristic test then; And adopt same quadrat method, and TIA, thermistor, first filter capacitor, second filter capacitor are installed in assigned position on the said AlN ceramic circuit board, and carry out hot setting, make necessary electric performance test then;
D, last adopts the spun gold thermocompression bonding that the pin of above-mentioned parts and this photoelectric subassembly is coupled together.
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