CN103915526A - Avalanche photodiode coupler with heat dissipation device - Google Patents
Avalanche photodiode coupler with heat dissipation device Download PDFInfo
- Publication number
- CN103915526A CN103915526A CN201410103619.5A CN201410103619A CN103915526A CN 103915526 A CN103915526 A CN 103915526A CN 201410103619 A CN201410103619 A CN 201410103619A CN 103915526 A CN103915526 A CN 103915526A
- Authority
- CN
- China
- Prior art keywords
- coupler
- heat dissipation
- avalanche photodiode
- heat abstractor
- apd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000017525 heat dissipation Effects 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000013307 optical fiber Substances 0.000 claims abstract description 12
- 238000010923 batch production Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000003754 machining Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses an avalanche photodiode coupler with a heat dissipation device. The avalanche photodiode coupler comprises the heat dissipation device and a coupler body. The heat dissipation device is composed of a substrate and a fin. The substrate is provided with a through hole. One side of the coupler body is provided with an optical fiber patch cord joint, and the other side of the coupler body is provided with an APD joint. A reducing through hole is formed inside the optical fiber patch cord joint. A cavity is formed inside the APD joint. The avalanche photodiode coupler is characterized in that the heat dissipation device is additionally arranged on the coupler body. By the avalanche photodiode coupler with the heat dissipation device, the APD heat dissipation effect is enhanced, the structure is reasonable, machining is convenient, installing is easy, and the requirement for batch production and use is met.
Description
Technical field
The invention belongs to photoelectric detection technology field, be specifically related to a kind of avalanche photodiode coupler that carries heat abstractor.
Background technology
Avalanche photo diode (APD) has the advantages such as fast response time, quantum efficiency is high, noise is little, is the important devices that faint optical signal is transformed into the signal of telecommunication.But the gain meeting of APD is fluctuateed with the variation of this device ambient temperature of living in, affects the stability of application system, thereby it is very important to keep it to be operated in temperature constant state.
In order to keep its gain stability, micro semiconductor refrigerator and APD overall package can be made to APD assembly, if application number is 201110309963.6 to disclose a kind of APD-TIA coaxial type photoelectric subassembly and manufacture method with function of temperature control, in the course of the work, make semiconductor cooler refrigeration or heat according to the variation of ambient temperature, thereby making APD working temperature keep constant.But in the time that micro semiconductor refrigerator freezes, the heat producing as can not be fast towards periphery environment scatter and disappear, refrigeration will be subject to very big weakening.Existing radiating mode mainly relies on APD coupler natural heat dissipation, and efficiency is lower.
Summary of the invention
The object of this invention is to provide a kind of avalanche photodiode coupler that carries heat abstractor, make up the deficiency of existing coupler structure design, to meet the demand of producing and applying.
A kind of avalanche photodiode coupler that carries heat abstractor of the present invention, comprises heat abstractor and coupler body; Described heat abstractor is made up of substrate and fin, has through hole on substrate; Described coupler body one side is optical fiber jumper terminal, and opposite side is APD joint; There is reducing through hole optical fiber jumper terminal inside; There is cavity APD joint inside;
it is characterized in that: on coupler body, increase heat abstractor.
As preferred version of the present invention: heat abstractor is made up of main heat abstractor and auxiliary radiating device, and main heat abstractor is identical with the substrate size of auxiliary radiating device, and both fit tightly, and main heat abstractor is positioned at auxiliary radiating device top.
A kind of avalanche photodiode coupler that carries heat abstractor of the present invention is compared with existing coupler, due to the present invention on the basis of existing technology, installed heat abstractor additional, can increase heat dissipation capacity, avoid gathering of heat.Coupler structure of the present invention is reasonable, easy to process, and the needs that meet batch production, use are installed simply.
Accompanying drawing explanation
Fig. 1 is the cutaway view of a kind of avalanche photodiode coupler that carries heat abstractor of the present invention;
Fig. 2 is the cutaway view of coupler body;
Fig. 3 is the cutaway view of inner core;
Fig. 4 is the cutaway view of main heat abstractor and auxiliary radiating device.
Embodiment
embodiment 1:
Fig. 1 is the cutaway view of a kind of avalanche photodiode coupler that carries heat abstractor of the present invention; Fig. 2 is the cutaway view of coupler body; Fig. 3 is the cutaway view of inner core; Fig. 4 is the cutaway view of main heat abstractor and auxiliary radiating device.As shown in above-mentioned accompanying drawing, a kind of avalanche photodiode coupler that carries heat abstractor of the present invention, comprises heat abstractor 1 and coupler body 2.
Described heat abstractor 1 is made up of main heat abstractor 4 and auxiliary radiating device 5.Main heat abstractor 4 materials are aluminium section bar, are of a size of 50mm × 30mm × 22.5mm; Substrate 4a thickness 4.6mm; On substrate 4a, each side uniform 3 fin 4c, are highly 17.9mm, and thickness is 1.1mm, and spacing is 7mm; In substrate 4a, there is in the heart a threaded through hole 4b, diameter 18mm, pitch is 0.75mm; Two screw 4d are positioned on substrate 4a longitudinal centre line, are 12.25mm apart from substrate 4a center, and screw thread specification is M3 × 0.5.Auxiliary radiating device 5 materials are aluminium section bar, are of a size of 50mm × 30mm × 3mm; Substrate 5a thickness 1.5mm; On substrate 5a, each side uniform 4 fin 5c, are highly 1.5mm, and thickness is 1mm, and spacing is 1.7mm; In substrate 5a, there is in the heart the through hole 5b that a diameter is 18mm; The through hole 5d that two diameters are 3mm is positioned on substrate 5a longitudinal centre line, is 12.25mm apart from substrate 5a center.When assembling, use M3 × 0.5 screw to connect main heat abstractor 4 and auxiliary radiating device 5.
Described coupler body 2 is made up of brass, chrome-faced, and a side is optical fiber jumper terminal 2a, opposite side is for being with externally threaded APD joint 2d.The specification of optical fiber jumper terminal 2a external screw-thread 2f is M8 × 0.75, top has a width and is 2.2mm, is highly the breach 2e of 2mm, inside has reducing through hole 2b, the diameter in three holes is respectively 6.1mm, 4.35mm and 6.4mm from top to bottom, and the degree of depth is respectively 3.8mm, 2.75mm and 1.7mm; Optical fiber jumper terminal 2a can be connected with FC optical fiber jumper terminal.APD joint 2d outside has the external screw thread 2g of M18 × 0.75, is connected with the through hole 4b on main heat abstractor 4, and inside is cavity 2c, and diameter is 14mm, and the degree of depth is 6.5mm, for placing APD.
Can in described optical fiber jumper terminal 2a, inner core 3 be installed; The stainless steel cylinder 3a that inner core 3 is respectively 4.35mm and 6.4mm by diameter forms, and is highly respectively 6mm, 1.5mm; Inner core 3 inside have reducing through hole 3b, and from top to bottom, the diameter in two holes is respectively 2.5mm, 0.8mm, and the degree of depth is respectively 6.5mm, 1mm.
When assembling, smear uniformly the sticking heat conductive silica gel of one deck tool in cavity 2c inside.
embodiment 2:
In the present embodiment, described main heat abstractor 4 materials are brass; Substrate 4a is upper, and each side uniform 5 fin 4c, are highly 17.9mm, and thickness is 1.1mm, and spacing is 3.5mm; Substrate 4a thickness 4.6mm; In the present embodiment, remaining part structure is identical with embodiment 1; The present embodiment can strengthen coupler radiating effect.
embodiment 3:
In the present embodiment, described optical fiber jumper terminal 2a inside has reducing through hole 2b, and from top to bottom, two bore dias are respectively 6.1mm, 2.5mm, and the degree of depth is respectively 3.8mm, 4.45mm, and inner core 3 is not installed, and remaining part structure is identical with embodiment 1.
embodiment 4:
In the present embodiment, auxiliary radiating device 5 is not installed, remaining part structure is identical with embodiment 1.
Claims (1)
1. a kind of avalanche photodiode coupler that carries heat abstractor of the present invention, comprises heat abstractor (1) and coupler body (2); Described heat abstractor (1) is made up of substrate (1a) and fin (1c), has through hole (1b) on substrate (1a); Described coupler body (2) one sides are optical fiber jumper terminal (2a), and opposite side is APD joint (2d); There is reducing through hole (2b) optical fiber jumper terminal (2a) inside; There is cavity (2c) APD joint (2d) inside;
it is characterized in that: on coupler body (2), increase heat abstractor (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410103619.5A CN103915526B (en) | 2014-03-20 | 2014-03-20 | A kind of avalanche photodiode coupler carrying heat abstractor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410103619.5A CN103915526B (en) | 2014-03-20 | 2014-03-20 | A kind of avalanche photodiode coupler carrying heat abstractor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103915526A true CN103915526A (en) | 2014-07-09 |
| CN103915526B CN103915526B (en) | 2016-08-17 |
Family
ID=51041057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410103619.5A Expired - Fee Related CN103915526B (en) | 2014-03-20 | 2014-03-20 | A kind of avalanche photodiode coupler carrying heat abstractor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103915526B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204383A (en) * | 2016-03-17 | 2017-09-26 | 联华电子股份有限公司 | It is tired to collapse type light detector elements and preparation method thereof |
| CN107370009A (en) * | 2017-07-20 | 2017-11-21 | 成都聚芯光科通信设备有限责任公司 | Radiating efficiency can be improved is closely assembled optical fiber cooling mechanism |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2867589Y (en) * | 2005-06-09 | 2007-02-07 | 华南师范大学 | Secondary package device of avalanche diode for infrared detection |
| CN102412240A (en) * | 2011-10-13 | 2012-04-11 | 武汉华工正源光子技术有限公司 | APD-TIA (Avalanche Photodiode-Transfer-Impedance Amplifier) coaxial photoelectric module with temperature control function and fabrication method thereof |
| CN202979546U (en) * | 2012-11-12 | 2013-06-05 | 武汉维康科技有限责任公司 | Double-face radiator |
| CN103617968A (en) * | 2013-12-06 | 2014-03-05 | 中国电子科技集团公司第四十四研究所 | Packaging device of APD focal plane |
| CN203774353U (en) * | 2014-03-20 | 2014-08-13 | 中国计量学院 | Avalanche photodiode coupler with cooling device |
-
2014
- 2014-03-20 CN CN201410103619.5A patent/CN103915526B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2867589Y (en) * | 2005-06-09 | 2007-02-07 | 华南师范大学 | Secondary package device of avalanche diode for infrared detection |
| CN102412240A (en) * | 2011-10-13 | 2012-04-11 | 武汉华工正源光子技术有限公司 | APD-TIA (Avalanche Photodiode-Transfer-Impedance Amplifier) coaxial photoelectric module with temperature control function and fabrication method thereof |
| CN202979546U (en) * | 2012-11-12 | 2013-06-05 | 武汉维康科技有限责任公司 | Double-face radiator |
| CN103617968A (en) * | 2013-12-06 | 2014-03-05 | 中国电子科技集团公司第四十四研究所 | Packaging device of APD focal plane |
| CN203774353U (en) * | 2014-03-20 | 2014-08-13 | 中国计量学院 | Avalanche photodiode coupler with cooling device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204383A (en) * | 2016-03-17 | 2017-09-26 | 联华电子股份有限公司 | It is tired to collapse type light detector elements and preparation method thereof |
| CN107370009A (en) * | 2017-07-20 | 2017-11-21 | 成都聚芯光科通信设备有限责任公司 | Radiating efficiency can be improved is closely assembled optical fiber cooling mechanism |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103915526B (en) | 2016-08-17 |
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| ASS | Succession or assignment of patent right |
Owner name: CHINA JILIANG UNIVERSITY Free format text: FORMER OWNER: XIANG JIANGTENG Effective date: 20150706 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20150706 Address after: Hangzhou City, Zhejiang province 310018 Jianggan District Xiasha Higher Education Park source Street No. 258 China Jiliang University Applicant after: China Jiliang University Address before: 310018 School of quality and safety engineering, China Jiliang University, Xiasha 258, Jianggan District, Zhejiang, Hangzhou Applicant before: Xiang Jiangteng |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Xinqun Inventor after: Xiang Jiangteng Inventor after: Yuan Changming Inventor before: Xiang Jiangteng Inventor before: Wang Xinqun Inventor before: Yuan Changming |
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| COR | Change of bibliographic data | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160817 Termination date: 20200320 |