CN103915526B - A kind of avalanche photodiode coupler carrying heat abstractor - Google Patents
A kind of avalanche photodiode coupler carrying heat abstractor Download PDFInfo
- Publication number
- CN103915526B CN103915526B CN201410103619.5A CN201410103619A CN103915526B CN 103915526 B CN103915526 B CN 103915526B CN 201410103619 A CN201410103619 A CN 201410103619A CN 103915526 B CN103915526 B CN 103915526B
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- CN
- China
- Prior art keywords
- substrate
- heat abstractor
- apd
- coupler
- optical fiber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000013307 optical fiber Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 abstract description 3
- 238000010923 batch production Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a kind of avalanche photodiode coupler carrying heat abstractor, including heat abstractor and coupler body；Described heat abstractor is made up of substrate and fin, and substrate has through hole；Described coupler body side is optical fiber jumper terminal, and opposite side is APD joint；Diameter bore is had inside optical fiber jumper terminal；Cavity is had inside APD joint；It is characterized in that: on coupler body, add heat abstractor.Present invention enhances APD radiating effect, rational in infrastructure, easy to process, install simple, meet batch production, the needs used.
Description
Technical field
The invention belongs to photoelectric detection technology field, be specifically related to a kind of avalanche photodiode coupler carrying heat abstractor.
Background technology
Avalanche photo diode (APD) has the advantages such as fast response time, quantum efficiency is high, noise is little, is the faint optical signal important devices that is transformed into the signal of telecommunication.But the gain of APD can be fluctuated with the change of this device local environment temperature, affects the stability of application system, thus it is particularly significant to keep it to be operated in temperature constant state.
In order to keep its gain stability, micro semiconductor refrigerator and APD overall package can be made APD assembly, as Application No. 201110309963.6 discloses APD-TIA coaxial type photoelectric subassembly and the manufacture method of a kind of band function of temperature control, in the course of the work, change according to environment temperature makes semiconductor cooler refrigeration or heats, so that APD operating temperature keeps constant.But when micro semiconductor refrigerator freezes, produced heat is as can not be quickly scattered and disappeared to surrounding environment, and refrigeration will greatly be weakened.Existing radiating mode relies primarily on APD coupler natural heat dissipation, inefficient.
Summary of the invention
It is an object of the invention to provide a kind of avalanche photodiode coupler carrying heat abstractor, make up the deficiency of existing coupler structure design, with satisfied production and the demand of application.
A kind of avalanche photodiode coupler carrying heat abstractor of the present invention, including heat abstractor and coupler body；Described heat abstractor is made up of substrate and fin, and substrate has through hole；Described coupler body side is optical fiber jumper terminal, and opposite side is APD joint；Diameter bore is had inside optical fiber jumper terminal；Cavity is had inside APD joint；It is characterized in that: on coupler body, add heat abstractor.
Preferred version as the present invention: heat abstractor is made up of primary heat sink and auxiliary radiating device, primary heat sink is identical with the substrate size of auxiliary radiating device, and both fit tightly, and primary heat sink is positioned at above auxiliary radiating device.
A kind of avalanche photodiode coupler of heat abstractor that carries of the present invention, compared with existing coupler, due to the present invention on the basis of existing technology, has installed heat abstractor additional, it is possible to increase heat dissipation capacity, it is to avoid gathering of heat.Coupler structure of the present invention is reasonable, easy to process, installs simple, meets batch production, the needs used.
Accompanying drawing explanation
Fig. 1 is the sectional view of a kind of avalanche photodiode coupler carrying heat abstractor of the present invention；
Fig. 2 is the sectional view of coupler body；
Fig. 3 is the sectional view of inner core；
Fig. 4 is the sectional view of primary heat sink and auxiliary radiating device.
Detailed description of the invention
Embodiment
1
:
Fig. 1 is the sectional view of a kind of avalanche photodiode coupler carrying heat abstractor of the present invention；Fig. 2 is the sectional view of coupler body；Fig. 3 is the sectional view of inner core；Fig. 4 is the sectional view of primary heat sink and auxiliary radiating device.As shown in above-mentioned accompanying drawing, a kind of avalanche photodiode coupler carrying heat abstractor of the present invention, including heat abstractor 1 and coupler body 2.
Described heat abstractor 1 is made up of primary heat sink 4 and auxiliary radiating device 5.Primary heat sink 4 material is aluminium section bar, a size of 50mm × 30mm × 22.5mm；Substrate 4a thickness 4.6mm；On substrate 4a, the most uniform 3 fin 4c, highly it is 17.9mm, thickness is 1.1mm, and spacing is 7mm；Having a threaded through hole 4b, diameter 18mm in substrate 4a in the heart, pitch is 0.75mm；Two screw 4d are positioned on substrate 4a longitudinal centre line, and distance substrate 4a center is 12.25mm, and screw thread specification is M3 × 0.5.Auxiliary radiating device 5 material is aluminium section bar, a size of 50mm × 30mm × 3mm；Substrate 5a thickness 1.5mm；On substrate 5a, the most uniform 4 fin 5c, highly it is 1.5mm, thickness is 1mm, and spacing is 1.7mm；The through hole 5b of an a diameter of 18mm is had in the heart in substrate 5a；The through hole 5d of two a diameter of 3mm is positioned on substrate 5a longitudinal centre line, and distance substrate 5a center is 12.25mm.M3 × 0.5 screw is used to connect primary heat sink 4 and auxiliary radiating device 5 during assembling.
Described coupler body 2 is made up of brass, chrome-faced, and side is optical fiber jumper terminal 2a, and opposite side is for carrying externally threaded APD joint 2d.The specification of optical fiber jumper terminal 2a external screw-thread 2f is M8 × 0.75, top have width be 2.2mm, height be 2mm breach 2e, inside has diameter bore 2b, the diameter in three holes is respectively 6.1mm, 4.35mm and 6.4mm from top to bottom, and the degree of depth is respectively 3.8mm, 2.75mm and 1.7mm；Optical fiber jumper terminal 2a can be connected with FC optical fiber jumper terminal.Having the external screw thread 2g of M18 × 0.75 outside APD joint 2d, be connected with the through hole 4b in primary heat sink 4, inside is cavity 2c, a diameter of 14mm, and the degree of depth is 6.5mm, is used for placing APD.
Inner core 3 can be installed in described optical fiber jumper terminal 2a；Inner core 3 is made up of the stainless steel cylinder 3a of diameter respectively 4.35mm and 6.4mm, and height is respectively 6mm, 1.5mm；Inner core 3 is internal has diameter bore 3b, and from top to bottom, the diameter in two holes is respectively 2.5mm, 0.8mm, and the degree of depth is respectively 6.5mm, 1mm.
During assembling, cavity 2c inner homogeneous smear one layer have sticking heat conductive silica gel.
Embodiment
2
:
In the present embodiment, described primary heat sink 4 material is brass；On substrate 4a, the most uniform 5 fin 4c, highly it is 17.9mm, thickness is 1.1mm, and spacing is 3.5mm；Substrate 4a thickness 4.6mm；In the present embodiment, remaining part structure is same as in Example 1；The present embodiment can strengthen coupler radiating effect.
Embodiment
3
:
In the present embodiment, having diameter bore 2b inside described optical fiber jumper terminal 2a, from top to bottom, two bore dias are respectively 6.1mm, 2.5mm, and the degree of depth is respectively 3.8mm, 4.45mm, do not install inner core 3, and remaining part structure is same as in Example 1.
Embodiment
4
:
In the present embodiment, not installing auxiliary radiating device 5, remaining part structure is same as in Example 1.
Claims (1)
1. carry an avalanche photodiode coupler for heat abstractor, including heat abstractor (1) and coupler body (2)；Described coupler body (2) side is optical fiber jumper terminal (2a), and opposite side is APD joint (2d)；Optical fiber jumper terminal (2a) is internal diameter bore (2b)；APD joint (2d) is internal cavity (2c)；It is characterized in that: described heat abstractor (1) is made up of primary heat sink (4) and auxiliary radiating device (5)；Described primary heat sink (4) includes substrate (4a) and fin (4c), and on substrate (4a), the most uniform 3 fins (4c), have a threaded through hole (4b) in substrate (4a) in the heart；Two screws (4d) are also had to be positioned on substrate (4a) longitudinal centre line；Described auxiliary radiating device (5) includes substrate (5a) and fin (5c), and on substrate (5a), the most uniform 4 fins (5c), have the through hole (5b) of an a diameter of 18mm in substrate (5a) in the heart；The through hole (5d) also having two a diameter of 3mm is positioned on substrate (5a) longitudinal centre line, uses screw to connect primary heat sink (4) and auxiliary radiating device (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410103619.5A CN103915526B (en) | 2014-03-20 | 2014-03-20 | A kind of avalanche photodiode coupler carrying heat abstractor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410103619.5A CN103915526B (en) | 2014-03-20 | 2014-03-20 | A kind of avalanche photodiode coupler carrying heat abstractor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103915526A CN103915526A (en) | 2014-07-09 |
| CN103915526B true CN103915526B (en) | 2016-08-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410103619.5A Expired - Fee Related CN103915526B (en) | 2014-03-20 | 2014-03-20 | A kind of avalanche photodiode coupler carrying heat abstractor |
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| CN (1) | CN103915526B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204383B (en) * | 2016-03-17 | 2020-02-21 | 联华电子股份有限公司 | Avalanche photodetector element and method for manufacturing the same |
| CN107370009A (en) * | 2017-07-20 | 2017-11-21 | 成都聚芯光科通信设备有限责任公司 | Radiating efficiency can be improved is closely assembled optical fiber cooling mechanism |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2867589Y (en) * | 2005-06-09 | 2007-02-07 | 华南师范大学 | Secondary package device of avalanche diode for infrared detection |
| CN202979546U (en) * | 2012-11-12 | 2013-06-05 | 武汉维康科技有限责任公司 | Double-face radiator |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412240A (en) * | 2011-10-13 | 2012-04-11 | 武汉华工正源光子技术有限公司 | APD-TIA (Avalanche Photodiode-Transfer-Impedance Amplifier) coaxial photoelectric module with temperature control function and fabrication method thereof |
| CN103617968B (en) * | 2013-12-06 | 2016-01-20 | 中国电子科技集团公司第四十四研究所 | The packaging system of APD focal plane array chip |
| CN203774353U (en) * | 2014-03-20 | 2014-08-13 | 中国计量学院 | Avalanche photodiode coupler with cooling device |
-
2014
- 2014-03-20 CN CN201410103619.5A patent/CN103915526B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2867589Y (en) * | 2005-06-09 | 2007-02-07 | 华南师范大学 | Secondary package device of avalanche diode for infrared detection |
| CN202979546U (en) * | 2012-11-12 | 2013-06-05 | 武汉维康科技有限责任公司 | Double-face radiator |
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| Publication number | Publication date |
|---|---|
| CN103915526A (en) | 2014-07-09 |
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| ASS | Succession or assignment of patent right |
Owner name: CHINA JILIANG UNIVERSITY Free format text: FORMER OWNER: XIANG JIANGTENG Effective date: 20150706 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20150706 Address after: Hangzhou City, Zhejiang province 310018 Jianggan District Xiasha Higher Education Park source Street No. 258 China Jiliang University Applicant after: China Jiliang University Address before: 310018 School of quality and safety engineering, China Jiliang University, Xiasha 258, Jianggan District, Zhejiang, Hangzhou Applicant before: Xiang Jiangteng |
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| C14 | Grant of patent or utility model | ||
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| CB03 | Change of inventor or designer information |
Inventor after: Wang Xinqun Inventor after: Xiang Jiangteng Inventor after: Yuan Changming Inventor before: Xiang Jiangteng Inventor before: Wang Xinqun Inventor before: Yuan Changming |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160817 Termination date: 20200320 |