CN105633215A - Method for optimizing thickness of baffle layer of blocking impurity band detector - Google Patents
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Abstract
The invention provides a method for optimizing thickness of a baffle layer of a blocking impurity band detector. The method comprises the following steps of acquiring optimal thickness of the baffle layer of the blocking impurity band detector. By the thickness, the detector can acquire high response rate and also has low noise, and the high-performance blocking impurity detector is designed and fabricated according to the optimized result. The method has the advantages that the corresponding optimal thickness of the baffle layer can be extracted with regard to blocking impurity band detectors obtained through different material systems and different epitaxial processes, the detector designed therefrom can have optimal value in performance, thus, repeated test piece is prevented in order to improve the device performance, and the development cost is greatly reduced.
Description
Technical field
The present invention relates to semiconductor light detector technology, specifically, it relates to a kind of method optimizing stop impurity band detector barrier layer thickness.
Background technology
The emission spectrum of the many cold targets in space all concentrates on Terahertz (THz) section of composing, existing space-based infrared system or ground radar cannot be adopted to detect, and space-based terahertz detection system can make up this deficiency, greatly improve the success ratio of target detect. In recent years, space-based terahertz detection technology develops rapidly, and Application Areas relates to atmospheric surveillance and celestial observation, and reason is as follows:
1) in air, the rotation and vibration spectrum of most material composition is all positioned at THz spectrum section;
2) the blackbody radiation peak value of planet, cosmic dust and newborn star is all positioned at THz spectrum section;
3) due to the Doppler effect that universe accelerative expanse brings, it is the strongest that the radiation signal from remote galaxy composes section at THz.
In order to meet the extreme requirement such as high resolution, Large visual angle and high frame per second that space-based is applied, terahertz detector must possess the stringent conditions such as face highly sensitive, big battle array and high response speed. Stop that impurity band detector has extremely high response speed (ps magnitude) and sensitivity (noise equivalent power about 10 in 0.9��20THz range of frequency-17��10-19W��Hz-1/2), array scale can reach 2048 �� 2048, occupies first of all terahertz detectors, and without the need to being operated at extremely low temperature (about 12K), is the first-selected detector of the applicable space-based Terahertz application generally acknowledged in the world.
Stop impurity band (BlockedImpurityBand, BIB) detector can be divided into silicon base, germanium base and GaAs based three classes, they are successfully mounted in Si Pice space visual telescope (SpitzerSpaceTelescope, SST), Zhan Musi Webb Telescope (JamesWebbSpaceTelescope, etc. JWST) above satellite, for the application of space-based Terahertz serves keying action. The constitutional features of BIB detector is that the blocking layer of an intrinsic and the absorption layer of a heavy doping are sandwiched between positive and negative electrode, the terahertz emission of normal incidence can directly be absorbed by the absorption layer through blocking layer, transition of electron is formed between impurity band and conduction band, electronics after transition can be collected by positive electrode by bending conduction band, thus completes the conversion of optical signal to electrical signal. The performance of BIB detector pursues high responsiveness and low noise, blocking layer is as the functional layer of its structure, the effect with restraint speckle, but the existence on blocking layer also can reduce the responsiveness of detector, and responsiveness and noise the change of barrier layer thickness is all more responsive.
Therefore, the performance improving BIB detector by optimizing the thickness on blocking layer seems particularly important. The present invention sets about research from the performance of BIB detector, investigates barrier layer thickness to the impact of responsiveness and noise, and the optimization design of this detector will be had certain directive significance by gained result.
Summary of the invention
For defect of the prior art, it is an object of the invention to provide a kind of method optimizing stop impurity band detector barrier layer thickness.
Optimize, according to provided by the invention, the method stopping impurity band detector barrier layer thickness, comprise the steps:
Step 1: build the structural models stopping impurity band (BIB) detector;
Step 2: build corresponding physical model according to the structural models of BIB detector;
Step 3: preparation experiment measure sample, extracts the critical material parameter of the physical model of BIB detector;
Step 4: terahertz emission is irradiated to device from front vertical, and the critical material parameter choose fixed bias U according to the physical model extracted in step 3F, obtain as positive electrode bias voltage U=U by numerical simulationFTime device normalization method response spectrum, and extract peak wavelength ��P;
Step 5: change barrier layer thickness, is obtained as positive electrode bias voltage U=U by numerical simulationFTime, ��PCorresponding peak response rate RPWith barrier layer thickness hBThe curve of change, obtains the function formula R of this curve of matchingP(hB);
Step 6: obtain light current I under different blocking layer thickness respectively by numerical simulationLThe a series of curves changed with positive electrode bias voltage U, wherein, described light current ILIt is the electric current passed through when device is subject to Terahertz irradiation;
Step 7: obtain as positive electrode bias voltage U=UFTime, light current ILWith barrier layer thickness hBThe curve of change, obtains the function formula I of this curve of matchingL(hB);
Step 8: according to light current ILWith noise current spectral density niCorresponding relation and the function formula I of step 7 gainedL(hB), obtain noise current spectral density niWith barrier layer thickness hBThe function formula n of changei(hB);
Step 9: definition detector figure of merit, and obtain the curve that detector figure of merit changes with barrier layer thickness;
Step 10: determine best barrier layer thickness with the curve that barrier layer thickness changes according to detector figure of merit.
Preferably, described step 1 comprises:
Step 1.1: form absorption layer, blocking layer and electrode layer in high conductive substrate successively;
Step 1.2: form positive electrode on electrode layer, forms negative potential in high conductive substrate.
Preferably, described step 2 comprises: the vertical Poisson equation of connection, the equation of continuity in electronics and hole, the equation of current density in electronics and hole, and Carrier recombination rate and photo-generated carrier production rate are added in equation of continuity by generation compound item, wherein said Carrier recombination item comprises SRH compound, radiative recombination and auger recombination, photo-generated carrier produces the production rate that item describes current carrier by coupling uptake factor model, need to consider the low temperature freeze-out effect of current carrier in addition, tunnel penetration effect and Velocity saturation effect, solve with Finite Element Method discretize simultaneous iteration.
Preferably, described step 5 comprises: fixing positive electrode bias voltage U is the fixed bias U described in step 4F, and fix the �� that incident wavelength X is step 4 gainedP, change barrier layer thickness, obtain �� by numerical simulationPCorresponding peak response rate RPWith barrier layer thickness hBThe curve of change, obtains peak response rate R by this curve of matchingPAbout different blocking layer thickness hBFunction formula RP(hB)��
Preferably, described step 7 comprises: the different blocking layer thickness h obtained in step 6BLower light current ILIn a series of curves changed with positive electrode bias voltage U, fixing positive electrode bias voltage U is the fixed bias U described in step 4F, obtain the curve that light current under this positive electrode bias voltage changes with barrier layer thickness, obtain light current I by this curve of matchingLAbout different blocking layer thickness hBFunction formula IL(hB)��
Preferably, described step 8 comprises: according to light current ILWith noise current spectral density niCorresponding relationAnd step 7 gained function formula IL(hB), obtain noise current spectral density niWith barrier layer thickness hBThe function formula n of changei(hB)��
Preferably, described step 9 comprises: definition peak response rate RPWith noise current spectral density niBusiness, i.e. RP/niFor detector figure of merit, by step 5 gained function formula RP(hB) divided by step 8 gained function formula ni(hB), obtain the curve that detector figure of merit changes with barrier layer thickness.
Preferably, described step 10 comprises: the detector figure of merit R obtained according to step 9P/niWith barrier layer thickness hBThe curve of change, by RP/niH corresponding when getting maximum valueBIt is defined as best barrier layer thickness.
Compared with prior art, the present invention has following useful effect:
1, the method optimizing stop impurity band detector barrier layer thickness provided by the invention, first obtain stopping the best barrier layer thickness of impurity band detector by numerical simulation and data fitting, this thickness also has low noise while detector can be made to obtain high responsiveness, for design and make high-performance stop impurity band detector provide reliable foundation.
2, the method optimizing stop impurity band detector barrier layer thickness provided by the invention, corresponding best barrier layer thickness can be extracted for the stop impurity band detector that differing materials system (comprising: silicon base, germanium base and GaAs based) and different epitaxy technique (comprising: vapour phase epitaxy, rheotaxy and molecular beam epitaxy) obtain, the detector performance thus designed will have optimum value, avoid to improve device performance and carry out test piece repeatedly, therefore more reliably convenient, significantly reduce R&D costs simultaneously.
Accompanying drawing explanation
By reading with reference to the detailed description that non-limiting example is done by the following drawings, the other features, objects and advantages of the present invention will become more obvious:
Fig. 1 is the structural representation that mesa stops impurity band detector;
Fig. 2 is the normalization method response spectrum contrast that numerical simulation and experiment measurement obtains when positive electrode bias voltage is fixed on 3V;
Fig. 3 is the matched curve that peak response rate changes with barrier layer thickness when positive electrode bias voltage is fixed on 3V;
Fig. 4 be under different blocking layer thickness light current with a series of curves of positive electrode bias variations;
Fig. 5 is the matched curve that light current changes with barrier layer thickness when positive electrode bias voltage is fixed on 3V;
Fig. 6 is the curve that detector figure of merit changes with barrier layer thickness.
In Fig. 1:
1-negative potential;
2-electrode layer;
3-positive electrode;
4-electrode layer;
5-negative potential.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in detail. The technician contributing to this area is understood the present invention by following examples further, but does not limit the present invention in any form. It should be appreciated that to those skilled in the art, without departing from the inventive concept of the premise, it is also possible to make some changes and improvements. These all belong to protection scope of the present invention.
The method stopping impurity band (BIB) detector barrier layer thickness is optimized, the rule that the method obtains BIB explorer response rate by numerical simulation and data fitting and noise current spectral density changes with barrier layer thickness according to provided by the invention. While making detector obtain high responsiveness, also there is low noise, the business of definition peak response rate and noise current spectral density is detector figure of merit, determine best barrier layer thickness by analyzing figure of merit with the rule that barrier layer thickness change, and then design according to the result after optimization and made BIB terahertz detector. Its step is as follows:
Step S1: build the structural models stopping impurity band (BIB) detector;
Namely in high conductive substrate, form absorption layer, blocking layer and electrode layer successively, on electrode layer, then form positive electrode, and form negative potential in high conductive substrate; Specifically, as shown in Figure 1, lead the N-type electrode layer forming the N-type absorption layer of heavy doping, the blocking layer of intrinsic and heavy doping on silicon substrate successively at N-type height, on electrode layer, then form positive electrode, and form negative potential in high conductive substrate.
Step S2: build corresponding physical model according to the structural models of BIB detector;
Specifically, join the equation of current density in equation of continuity, electronics and the hole of standing Poisson equation, electronics and hole, and Carrier recombination rate and photo-generated carrier production rate are added equation of continuity by generation compound item, wherein Carrier recombination item comprises SRH compound, radiative recombination and auger recombination, photo-generated carrier produces item and describes its production rate by coupling uptake factor model, need in addition to consider the low temperature freeze-out effect of current carrier, tunnel penetration effect and Velocity saturation effect, solve with Finite Element Method discretize simultaneous iteration.
Step S3: preparation experiment measure sample, extracts the critical material parameter of the physical model of BIB detector;
Specifically, high conductive substrate grows the absorption layer of heavy doping and the blocking layer of intrinsic successively, in this, as experiment measuring sample, the critical material parameter of measurement comprises: the carrier mobility of sample and life-span, substrate doping and thickness, absorption layer doping content and thickness, blocking layer doping content and thickness.
Further, namely lead the blocking layer of N-type absorption layer and the intrinsic growing heavy doping on silicon substrate successively at N-type height, then adopt the method for low temperature Hall test to obtain electronic mobility ��e=1.21 �� 107cm2/ Vs, hole mobility ��h=1.03 �� 106cm2/ Vs, electron lifetime ��e=1 �� 10-3S, hole life-span ��h=3 �� 10-4S, adopts the method for spreading resistance analysis to obtain substrate doping NS=2 �� 1019cm-3, substrate thickness hS=450 ��m, absorption layer doping content NA=5 �� 1017cm-3, absorption layer thickness hA=30 ��m, blocking layer doping content NB=1 �� 1013cm-3, barrier layer thickness hB=8 ��m.
Step S4: terahertz emission is irradiated to device from front vertical, and the critical material parameter choose fixed bias U according to the physical model extracted in step S3F, obtain as positive electrode bias voltage U=U by numerical simulationFTime device normalization method response spectrum, and extract peak wavelength ��P;
Specifically, described normalization method response spectrum refers to the corresponding relation of the response after peak value normalization method and incident wavelength, and peak wavelength refers to the incident wavelength that peak value of response is corresponding; Choose a fixed bias UF=3V, is obtained as positive electrode bias voltage U=U by numerical simulationFNormalization method response spectrum (Fig. 2) of device during=3V, as shown in Figure 2, simulation and experiment meet better, prove the reliability of model construction of the present invention and parameter extracting method, extract peak wavelength �� by Fig. 2P=25 ��m.
Step S5: change barrier layer thickness, is obtained as positive electrode bias voltage U=U by numerical simulationFTime, ��PCorresponding peak response rate RPWith barrier layer thickness hBThe curve of change, obtains function formula R by this curve of matchingP(hB);
Specifically, fixing positive electrode bias voltage U is the fixed bias U described in step S4F=3V, and fix the �� that incident wavelength X is step S4 gainedP=25 ��m, matching obtains RP(hB) expression formula as follows:
RP(hB)=55.57605-5.10224hB��
Step S6: obtain light current I under different blocking layer thickness respectively by numerical simulationLThe a series of curves changed with positive electrode bias voltage U, wherein, described light current ILIt is the electric current passed through when device is subject to Terahertz irradiation; Specifically, as shown in Figure 4.
Step S7: the different blocking layer thickness h obtained in step s 6BLower light current ILIn a series of curves changed with positive electrode bias voltage U, fixing positive electrode bias voltage U is the fixed bias U described in step S4F=3V, obtains light current I under this positive electrode bias voltageLWith barrier layer thickness hBThe curve of change, obtains function formula I by this curve of matchingL(hB):
Step S8: according to light current ILWith noise current spectral density niCorresponding relationAnd step S7 gained function formula IL(hB), obtain noise current spectral density niWith barrier layer thickness hBThe rule n of changei(hB), wherein unit charge electricity q=1.60218 �� 10-19C, ni(hB) expression formula as follows:
Step S9: definition peak response rate RPWith noise current spectral density niBusiness, i.e. RP/niFor detector figure of merit, by step S5 gained function formula RP(hB) divided by step S8 gained function formula ni(hB), obtain the curve that detector figure of merit changes with barrier layer thickness; Specifically, as shown in Figure 6.
Step S10: the detector figure of merit R obtained according to step S9P/niWith barrier layer thickness hBThe curve of change, by RP/niH corresponding when getting maximum valueBIt is defined as best barrier layer thickness; Specifically, as shown in Figure 6, h is worked asBWhen=5.6 ��m, detector figure of merit RP/niGetting maximum value, namely for the BIB detector of the present embodiment, best barrier layer thickness is 5.6 ��m.
Step S11: adopt the material system identical with experiment measuring sample in step S3 and processing condition to grow the absorption layer of heavy doping and the blocking layer of intrinsic in high conductive substrate successively, wherein, barrier layer thickness is designed to the best barrier layer thickness of step S10 gained, then completes element manufacturing through seven step process such as label creating, ion implantation, table top etching, electrode fabrication, surface passivation, corrosion perforate and electrode thickenings;
Further, utilize provided by the invention optimization to stop that the best barrier layer thickness that the method for impurity band detector barrier layer thickness obtains carries out element manufacturing, comprise the steps:
Steps A 1: adopting the material system identical with experiment measuring sample in step S3 and processing condition to lead the intrinsic blocking layer of heavy doping absorption layer and 5.6 �� m-thick growing 30 �� m-thick on silicon substrate successively at the height of 450 �� m-thick, wherein the doping content on substrate, absorption layer and blocking layer is respectively 2 �� 1019cm-3��5��1017cm-3With 1 �� 1013cm-3;
Steps A 2: obtain mark regional window by photoetching process over the barrier layer, adopt electron beam evaporation process depositing Ti/Au double-level-metal, then form photo-etching mark after acetone is peeled off;
Steps A 3: obtain window needed for ion implantation by photoetching process over the barrier layer, injects phosphonium ion at window area, then forms electrode layer through rapid thermal anneal process;
Steps A 4: obtain the required window of etching by photoetching process on electrode layer, adopt dark silicon etching process longitudinally etching 36 ��m to remove the electrode layer of window area, blocking layer and absorption layer, form photosensitive table top;
Steps A 5: utilize photoetching process to obtain positive and negative electrode regional window, adopt electron beam evaporation process depositing Ti/Al/Ni/Au tetra-layers of metal, then peels off through acetone and forms positive and negative Ohm contact electrode after annealing process;
Steps A 6: the silicon nitride passivation adopting plasma enhanced chemical vapor deposition technique growth 500nm thick;
Steps A 7: utilize photoetching process to form the required window of corrosion in positive and negative electrode region, then with the silicon nitride in buffered hydrofluoric acid solution corrosion target region, complete electrode;
Steps A 8: utilize photoetching process again to obtain positive and negative electrode regional window, adopts electron beam evaporation process deposition Ni/Au double-level-metal, then completes electrode after acetone is peeled off and thickeies. The silicon base so far with optimum performance stops that the making of impurity band detector is complete.
Above specific embodiments of the invention are described. It is understood that the present invention is not limited to above-mentioned particular implementation, those skilled in the art can make a variety of changes within the scope of the claims or revise, and this does not affect the flesh and blood of the present invention.
Claims (8)
1. optimize the method stopping impurity band detector barrier layer thickness for one kind, it is characterised in that, comprise the steps:
Step 1: build the structural models stopping impurity band BIB detector;
Step 2: build corresponding physical model according to the structural models of BIB detector;
Step 3: preparation experiment measure sample, extracts the critical material parameter of the physical model of BIB detector;
Step 4: terahertz emission is irradiated to device from front vertical, and the critical material parameter choose fixed bias U according to the physical model extracted in step 3F, obtain as positive electrode bias voltage U=U by numerical simulationFTime device normalization method response spectrum, and extract peak wavelength ��P;
Step 5: change barrier layer thickness, is obtained as positive electrode bias voltage U=U by numerical simulationFTime, ��PCorresponding peak response rate RPWith barrier layer thickness hBThe curve of change, obtains the function formula R of this curve of matchingP(hB);
Step 6: obtain light current I under different blocking layer thickness respectively by numerical simulationLThe a series of curves changed with positive electrode bias voltage U, wherein, described light current ILIt is the electric current passed through when device is subject to Terahertz irradiation;
Step 7: obtain as positive electrode bias voltage U=UFTime, light current ILWith barrier layer thickness hBThe curve of change, obtains the function formula I of this curve of matchingL(hB);
Step 8: according to light current ILWith noise current spectral density niCorresponding relation and the function formula I of step 7 gainedL(hB), obtain noise current spectral density niWith barrier layer thickness hBThe function formula n of changei(hB);
Step 9: definition detector figure of merit, and obtain the curve that detector figure of merit changes with barrier layer thickness;
Step 10: determine best barrier layer thickness with the curve that barrier layer thickness changes according to detector figure of merit.
2. the method optimizing stop impurity band detector barrier layer thickness according to claim 1, it is characterised in that, described step 1 comprises:
Step 1.1: form absorption layer, blocking layer and electrode layer in high conductive substrate successively;
Step 1.2: form positive electrode on electrode layer, forms negative potential in high conductive substrate.
3. the method optimizing stop impurity band detector barrier layer thickness according to claim 1, it is characterized in that, described step 2 comprises: the vertical Poisson equation of connection, the equation of continuity in electronics and hole, the equation of current density in electronics and hole, and Carrier recombination rate and photo-generated carrier production rate are added in equation of continuity by generation compound item, wherein said Carrier recombination item comprises SRH compound, radiative recombination and auger recombination, photo-generated carrier produces the production rate that item describes current carrier by coupling uptake factor model, need to consider the low temperature freeze-out effect of current carrier in addition, tunnel penetration effect and Velocity saturation effect, solve with Finite Element Method discretize simultaneous iteration.
4. the method optimizing stop impurity band detector barrier layer thickness according to claim 1, it is characterised in that, described step 5 comprises: fixing positive electrode bias voltage U is the fixed bias U described in step 4F, and fix the �� that incident wavelength X is step 4 gainedP, change barrier layer thickness, obtain �� by numerical simulationPCorresponding peak response rate RPWith barrier layer thickness hBThe curve of change, obtains peak response rate R by this curve of matchingPAbout different blocking layer thickness hBFunction formula RP(hB)��
5. the method optimizing stop impurity band detector barrier layer thickness according to claim 1, it is characterised in that, described step 7 comprises: the different blocking layer thickness h obtained in step 6BLower light current ILIn a series of curves changed with positive electrode bias voltage U, fixing positive electrode bias voltage U is the fixed bias U described in step 4F, obtain the curve that light current under this positive electrode bias voltage changes with barrier layer thickness, obtain light current I by this curve of matchingLAbout different blocking layer thickness hBFunction formula IL(hB)��
6. the method optimizing stop impurity band detector barrier layer thickness according to claim 1, it is characterised in that, described step 8 comprises: according to light current ILWith noise current spectral density niCorresponding relationAnd step 7 gained function formula IL(hB), obtain noise current spectral density niWith barrier layer thickness hBThe function formula n of changei(hB), wherein unit charge electricity q=1.60218 �� 10-19C��
7. the method optimizing stop impurity band detector barrier layer thickness according to claim 1, it is characterised in that, described step 9 comprises: definition peak response rate RPWith noise current spectral density niBusiness, i.e. RP/niFor detector figure of merit, by step 5 gained function formula RP(hB) divided by step 8 gained function formula ni(hB), obtain the curve that detector figure of merit changes with barrier layer thickness.
8. the method optimizing stop impurity band detector barrier layer thickness according to claim 1, it is characterised in that, described step 10 comprises: the detector figure of merit R obtained according to step 9P/niWith barrier layer thickness hBThe curve of change, by RP/niH corresponding when getting maximum valueBIt is defined as best barrier layer thickness.
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| CN106949962A (en) * | 2017-03-08 | 2017-07-14 | 中国电子科技集团公司第五十研究所 | Optimization stops the method for impurity band terahertz detector responsive bandwidth |
| CN108133977A (en) * | 2017-11-15 | 2018-06-08 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | The method of optimization blocking impurity band detector operating temperature |
| CN109920877A (en) * | 2019-01-30 | 2019-06-21 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | The preparation method for dividing furnace extension type silicon substrate to stop impurity band terahertz detector |
| CN110188379A (en) * | 2019-04-16 | 2019-08-30 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | The optimization method and device of far infrared blocking impurity band detector absorber thickness |
| CN111191403A (en) * | 2019-12-25 | 2020-05-22 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Method for optimizing BIB detector response rate and BIB detector |
| CN111428364A (en) * | 2020-03-24 | 2020-07-17 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Method, system and medium for optimally blocking noise of impurity band detector |
| CN113078233A (en) * | 2021-03-04 | 2021-07-06 | 电子科技大学 | Silicon-based field effect tube terahertz detector with high responsivity |
| CN113094941A (en) * | 2021-03-04 | 2021-07-09 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Method and system for optimizing comprehensive bandwidth of far infrared blocking impurity band detector |
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| CN106949962A (en) * | 2017-03-08 | 2017-07-14 | 中国电子科技集团公司第五十研究所 | Optimization stops the method for impurity band terahertz detector responsive bandwidth |
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| CN111191403A (en) * | 2019-12-25 | 2020-05-22 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Method for optimizing BIB detector response rate and BIB detector |
| CN111191403B (en) * | 2019-12-25 | 2023-02-24 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Method for optimizing BIB detector response rate and BIB detector |
| CN111428364A (en) * | 2020-03-24 | 2020-07-17 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Method, system and medium for optimally blocking noise of impurity band detector |
| CN111428364B (en) * | 2020-03-24 | 2022-04-01 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Method, system and medium for optimally blocking noise of impurity band detector |
| CN113078233A (en) * | 2021-03-04 | 2021-07-06 | 电子科技大学 | Silicon-based field effect tube terahertz detector with high responsivity |
| CN113094941A (en) * | 2021-03-04 | 2021-07-09 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Method and system for optimizing comprehensive bandwidth of far infrared blocking impurity band detector |
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