CN113094941A - Method and system for optimizing comprehensive bandwidth of far infrared blocking impurity band detector - Google Patents
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Abstract
The invention provides a method and a system for optimizing the comprehensive bandwidth of a far infrared blocking impurity band detector, which comprises the following steps: obtaining a curve of the optimal value factor of the comprehensive bandwidth of the impurity band blocking detector along with the change of the thickness of the absorption layer through numerical simulation and data fitting; and extracting the thickness of the absorption layer corresponding to the optimal comprehensive bandwidth according to the curve, wherein the thickness of the absorption layer is used for manufacturing a blocking impurity band detector. The invention can extract the thickness of the absorption layer corresponding to the optimal comprehensive bandwidth aiming at the blocking impurity band detector obtained by different material systems and different process conditions, and the designed and manufactured blocking impurity band detector can obtain the optimal comprehensive bandwidth by balancing the response bandwidth and the transmission bandwidth, thereby avoiding repeated test pieces for optimizing the comprehensive bandwidth of the device, greatly shortening the research and development period and reducing the research and development cost.
Description
Technical Field
The invention relates to the technology of semiconductor optical detectors, in particular to a method and a system for optimizing the comprehensive bandwidth of a far infrared blocking impurity band detector.
Background
Far infrared radiation generally refers to electromagnetic waves having a wavelength between 14 μm and 1000 μm, which have characteristics of clothing penetration, fingerprint resolution, and nondestructive detection. Therefore, the far infrared technology can be widely applied to astronomical observation, atmosphere monitoring and contraband detection. In the field of astronomical observation, most asteroids and cosmic dust have a plurality of characteristic absorption peaks in a far infrared band, and gaseous stars can radiate far infrared rays through molecular rotation and vibration, so that high-performance deep space detection can be realized through a far infrared detector. In the atmosphere monitoring field, compare in traditional near-infrared and mid-infrared technique, the stratosphere not only can be surveyed to the far infrared technique, but also can extend detection range to the troposphere, consequently can promote environmental monitoring and atmospheric analysis ability through the far infrared technique. In the field of contraband detection, explosives, drugs and a plurality of contraband have a plurality of absorption peaks in a far infrared band, and the absorption peaks can be used for distinguishing fingerprint characteristics of specific contraband, so that the urban public safety early warning capability can be improved through a far infrared technology.
The Blocking Impurity Band (BIB) detector originates from extrinsic photoconduction, both belonging to the family of far infrared photodetectors. The working principle of the extrinsic photoconduction is that an impurity band is formed between a conduction band and a valence band through unintentional doping, electrons can jump from the impurity band to the conduction band through absorbing far infrared photon energy, and then can be directly collected by an electrode through a bent conduction band, so that conversion of far infrared radiation from an optical signal to an electric signal is realized. The structural difference between the BIB detector and the extrinsic photoconduction is the presence of a barrier layer, which serves to suppress dark current and shot noise. In addition, compared with the extrinsic photoconduction, the BIB detector has larger doping concentration and smaller device size, thereby having stronger radiation resistance and longer service life.
The bandwidth of the BIB detector comprises a response bandwidth and a transmission bandwidth, wherein the response bandwidth is defined as the full width at half maximum of a normalized spectral response curve and is characterized by the spectral response range of the detector; and the transmission bandwidth is defined as the reciprocal of the average transit time of the carriers and is characterized by the signal transmission speed of the detector. The sizes of the two bandwidths are directly determined by the thickness of the absorption layer, but the dependence relationship of the response bandwidth and the thickness of the absorption layer is just opposite to that of the transmission bandwidth and the thickness of the absorption layer, and the two bandwidths form a strong competitive relationship. In order to balance the response bandwidth and the transmission bandwidth of the detector and enable the BIB detector to have the optimal comprehensive bandwidth, the conventional method is to select a series of BIB detectors with different absorption layer thicknesses to directly perform flow sheet, then to select the BIB detectors preferentially according to the flow sheet result, and therefore time and economic cost are high.
Patent document CN106949962A discloses a method for optimizing response bandwidth of a terahertz detector for blocking an impurity band, in which a functional expression of the response bandwidth of the detector with respect to thicknesses of different absorption layers is obtained through numerical simulation and data fitting, and then the thickness of the absorption layer corresponding to the optimal response bandwidth can be extracted according to the functional expression, so that the response bandwidth of a BIB detector manufactured according to the thickness has an optimal value. However, since the response bandwidth and the transmission bandwidth are equally important for the BIB probe and have a strong competitive relationship, when the response bandwidth of the BIB probe takes an optimal value, the transmission bandwidth will be far away from the optimal value. Unlike the patent document CN106949962A, the present invention focuses on the comprehensive bandwidth, and proposes the concept of the optimal bandwidth figure of merit for the first time, and extracts the thickness of the absorption layer corresponding to the optimal comprehensive bandwidth by analyzing the relationship between the optimal bandwidth figure of merit and the thickness of the absorption layer.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a method and a system for optimizing the comprehensive bandwidth of a far infrared blocking impurity band detector.
The method for optimizing the comprehensive bandwidth of the far infrared impurity blocking band detector provided by the invention comprises the following steps:
a curve acquisition step: obtaining a curve of the optimal value factor of the comprehensive bandwidth of the impurity band blocking detector along with the change of the thickness of the absorption layer through numerical simulation and data fitting;
and a thickness calculation step: and extracting the thickness of the absorption layer corresponding to the optimal comprehensive bandwidth according to the curve, wherein the thickness of the absorption layer is used for manufacturing a blocking impurity band detector.
Preferably, the method specifically comprises:
step 1: constructing a structural model of the impurity blocking band detector;
step 2: constructing a corresponding physical model according to the structural model of the impurity blocking band detector;
and step 3: growing an experimental measurement sample, extracting key material parameters of a physical model of the impurity-blocking band detector, and completing construction of a numerical model of the impurity-blocking band detector;
and 4, step 4: the far infrared radiation is vertically irradiated to the impurity band blocking detector from the front side, and a fixed bias voltage U capable of enabling the impurity band blocking detector to normally work is selected according to the key material parameters of the physical model extracted in the step 3FObtaining the current positive electrode bias voltage U from the numerical model constructed in step 3A＝UFBlocking a spectral response curve of the impurity band detector, the spectral response curve being a barrierA curve of spectral responsivity R of the impurity band detector varying with incident wavelength lambda;
and 5: changing the thickness of the absorption layer of the numerical model in the step 4 to obtain the current positive electrode bias voltage UA＝UFThe spectral response of the impurity band blocking detector corresponding to different absorption layer thicknesses is a series of curves;
step 6: biasing the current positive electrode obtained in step 5 to a voltage UA＝UFThen, a series of curves of spectral responsivity of the impurity band blocking detector corresponding to different absorption layer thicknesses are subjected to peak value normalization processing to obtain a current positive electrode bias voltage UA＝UFThen, a series of curves of normalized spectral response of the blocking impurity band detector corresponding to different absorption layer thicknesses are obtained;
and 7: when the positive electrode bias voltage U is extractedA＝UFTime, response bandwidth BWRAccording to the thickness h of the absorbing layerAObtaining a fitted positive electrode bias voltage U according to the changed curveFLower response bandwidth BWRAccording to the thickness h of the absorbing layerAFunctional BW of a varying curveR(hA) Wherein the response bandwidth is the full width at half maximum of the normalized spectral response curve of the blocking impurity band detector;
and 8: obtaining the current positive electrode bias voltage U by the numerical model constructed in the step 3A＝UFThe electric field intensity distribution curve of the blocking impurity band detector is a curve of the electric field intensity E of the blocking impurity band detector changing along with the longitudinal position Y;
and step 9: changing the thickness of the absorption layer of the numerical model in step 8 to obtain the current positive electrode bias voltage UA＝UFThen, a series of curves of the electric field intensity distribution of the impurity band blocking detector corresponding to different absorption layer thicknesses are obtained;
step 10: obtaining the current positive electrode bias voltage U by the numerical model constructed in the step 3A＝UFBlocking a carrier mobility distribution curve of the impurity band detector, wherein the carrier mobility distribution curve is a curve of carrier mobility mu of the impurity band detector along with change of a longitudinal position Y;
step 11: improvement ofChanging the thickness of the absorption layer of the numerical model in step 10 to obtain the current positive electrode bias voltage UA＝UFThe distribution of the carrier mobility of the impurity band detector is blocked by a series of curves corresponding to different absorption layer thicknesses;
step 12: according to the corresponding relationship between the average transit time t of the carrier and the electric field intensity E and the carrier mobility mu, the current positive electrode bias voltage U obtained in the step 9 is utilizedA＝UFA series of curves of electric field intensity distribution of impurity-blocking band detector corresponding to different absorption layer thicknesses and the current positive electrode bias voltage U obtained in step 11A＝UFObtaining a series of curves of carrier mobility distribution of the impurity band detector corresponding to different absorption layer thicknesses to obtain fitting positive electrode bias voltage UFAverage transit time t of lower carrier with thickness h of absorbing layerAFunction t (h) of the curve of variationA)；
Step 13: based on the transmission bandwidth BWTCorresponding relation with carrier average transit time t and functional formula t (h) obtained in step 12A) To obtain a positive electrode bias voltage UFLower transmission bandwidth BWTAccording to the thickness h of the absorbing layerAVariable functional BWT(hA)；
Step 14: defining a detector comprehensive bandwidth figure of merit (FOM) and acquiring a curve of the FOM changing along with the thickness of the absorbing layer; in particular, a response bandwidth BW is definedRAnd transmission bandwidth BWTProduct of the n-th power of BWR·(BWT)nIntegrating a bandwidth figure of merit for the detector, wherein n is a weight factor of the transmission bandwidth;
step 15: determining the thickness of the absorption layer corresponding to the optimal comprehensive bandwidth according to a curve of the optimal factor of the comprehensive bandwidth of the detector along with the change of the thickness of the absorption layer;
step 16: and (3) sequentially growing an absorption layer and a barrier layer on the high-conductivity substrate by adopting the same material system and process conditions as those of the experimental measurement sample in the step (3), wherein the thickness of the absorption layer is designed to be the thickness of the absorption layer corresponding to the optimal comprehensive bandwidth obtained in the step (15), and then finishing the manufacture of the impurity band blocking detector.
Preferably, the step 1 comprises:
step 1.1: sequentially forming an absorption layer, a barrier layer, an electrode layer and a passivation layer on a high-conductivity substrate;
step 1.2: a positive electrode is formed on the electrode layer, and a negative electrode is formed on the high-conductivity substrate.
Preferably, the step 2 includes: the method comprises the steps of establishing a simultaneous Poisson equation, an electron-hole continuity equation, an electron-hole current density equation, adding a carrier recombination rate and a photogenerated carrier generation rate into the continuity equation through generating a recombination term, wherein the recombination term comprises SRH recombination, radiative recombination and Auger recombination, describing the carrier generation rate through a coupling absorption coefficient model by the photogenerated carrier generation term, and discretizing simultaneous iterative solution by a finite element method by considering the low-temperature freezeout effect, the potential barrier tunneling effect and the speed saturation effect of the carriers.
Preferably, the step 3 comprises: growing an absorption layer and a barrier layer on a high-conductivity substrate in sequence to serve as experimental measurement samples, extracting key material parameters of a physical model of the impurity band blocking detector, and completing construction of a numerical model of the impurity band blocking detector, wherein the key material parameters comprise: the carrier mobility and the lifetime of the sample, the doping concentration and the thickness of the substrate, the doping concentration and the thickness of the absorption layer and the doping concentration and the thickness of the barrier layer.
Preferably, the step 7 includes: current positive electrode bias voltage U obtained in step 6A＝UFExtracting positive electrode bias voltage U from a series of curves of normalized spectral response of impurity-blocking band detectors corresponding to different absorption layer thicknessesFLower response bandwidth BWRAccording to the thickness h of the absorbing layerACurve of variation by fitting the positive electrode bias voltage UFLower response bandwidth BWRAccording to the thickness h of the absorbing layerAThe changing curve is used for obtaining the positive electrode bias voltage UFLower response bandwidth BWRWith respect to different absorption layer thicknesses hAFunction of (BW)R(hA)。
Preferably, the step 12 comprises: according to the correspondence of the average transition time t of the carrier with the electric field intensity E and the carrier mobility muRelationships between
And using the current positive electrode bias voltage U obtained in step 9A＝UFA series of curves of electric field intensity distribution of the impurity band blocking detector corresponding to different absorption layer thicknesses, and the current positive electrode bias voltage U obtained in step 11A＝UFObtaining a series of curves of the carrier mobility distribution of the impurity band detector corresponding to different absorption layer thicknesses to obtain positive electrode bias voltage UFAverage transit time t of lower carrier with thickness h of absorbing layerACurve of variation by fitting the positive electrode bias voltage UFAverage transit time t of lower carrier with thickness h of absorbing layerAThe changing curve is used for obtaining the positive electrode bias voltage UFAverage transit time t of lower carriers with respect to different absorber layer thicknesses hAIs a function of t (h)A)。
Preferably, the step 13 includes: based on the transmission bandwidth BWTCorrespondence BW with carrier average transit time t T1/t and the functional formula t (h) obtained in step 12A) To obtain a positive electrode bias voltage UFLower transmission bandwidth BWTAccording to the thickness h of the absorbing layerAVariable functional BWT(hA)。
Preferably, said step 14 comprises: response Bandwidth BW obtained by step 7R(hA) Multiplying the transmission bandwidth BW obtained in the step 13T(hA) To the power of n, obtaining the optimal value factor FOM of the comprehensive bandwidth of the detector relative to the thickness h of different absorption layersABy FOM (h)A) And further obtaining a curve of the change of the comprehensive bandwidth figure of merit of the detector along with the thickness of the absorption layer.
The invention provides a system for optimizing the comprehensive bandwidth of a far infrared impurity blocking band detector, which comprises:
a curve acquisition module: obtaining a curve of the optimal value factor of the comprehensive bandwidth of the impurity band blocking detector along with the change of the thickness of the absorbing layer through numerical simulation and data fitting,
a thickness calculation module: and extracting the thickness of the absorption layer corresponding to the optimal comprehensive bandwidth according to the curve, wherein the thickness of the absorption layer is used for manufacturing a blocking impurity band detector.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention provides a method for optimizing the comprehensive bandwidth of a far infrared impurity-blocking band detector, which comprises the steps of firstly obtaining a curve of a superior factor of the comprehensive bandwidth of the detector along with the change of the thickness of an absorption layer through numerical simulation and data fitting, further extracting the thickness of the absorption layer corresponding to the optimal comprehensive bandwidth according to the curve, and then enabling the comprehensive bandwidth of the impurity-blocking band detector manufactured according to the thickness to have the optimal value, thereby providing a reliable basis for designing and manufacturing the high-performance far infrared impurity-blocking band detector.
2. The invention provides a method for optimizing the comprehensive bandwidth of a far infrared blocking impurity band detector, which can extract the thickness of an absorption layer corresponding to the optimal comprehensive bandwidth aiming at the blocking impurity band detector obtained by different material systems (comprising silicon-based, germanium-based and gallium arsenide-based) and different process conditions (comprising a gas phase epitaxy process, a liquid phase epitaxy process and a molecular beam epitaxy process).
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic diagram of a far infrared impurity band (BIB) detector;
FIG. 2 shows the current when the positive electrode is biased UAA series of curves of spectral response of the BIB detector corresponding to different absorption layer thicknesses when the voltage is 1V;
FIG. 3 shows the current when the positive electrode is biased UAA series of curves of normalized spectral response of the BIB detector corresponding to different absorption layer thicknesses when the value is 1V;
FIG. 4 shows the current when the positive electrode is biased UAResponse at 1VA fitted curve of which the bandwidth changes with the thickness of the absorbing layer;
FIG. 5 shows the current when the positive electrode is biased UAA series of curves of the electric field intensity distribution of the BIB detector corresponding to different absorption layer thicknesses when the electric field intensity distribution is 1V;
FIG. 6 shows the current when the positive electrode is biased UAWhen the voltage is 1V, a series of curves of BIB detector carrier mobility distribution corresponding to different absorption layer thicknesses are obtained;
FIG. 7 shows the current when the positive electrode is biased UAA fitted curve of the change of the average transit time of the carriers with the thickness of the absorbing layer when the voltage is 1V;
FIG. 8 shows the current when the positive electrode is biased UAA curve of the integrated bandwidth figure of merit varying with the thickness of the absorbing layer when the value is 1V;
in fig. 1: 1-a positive electrode; 2-a passivation layer; 3-an electrode layer; 4-a barrier layer; 5-an absorbing layer; 6-a negative electrode; 7-high conductivity substrate.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that it would be obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit of the invention. All falling within the scope of the present invention.
According to the method for optimizing the comprehensive bandwidth of the far infrared impurity-blocking band (BIB) detector, provided by the invention, a curve of a figure of merit factor of the comprehensive bandwidth of the detector along with the change of the thickness of the absorption layer is obtained through numerical simulation and data fitting. And extracting the thickness of the absorption layer corresponding to the optimal comprehensive bandwidth according to the curve, and designing and manufacturing the BIB detector according to the thickness. The method comprises the following steps:
step S1: constructing a structural model of a Blocking Impurity Band (BIB) detector;
sequentially forming an absorption layer, a barrier layer, an electrode layer and a passivation layer on a high-conductivity substrate, then forming a positive electrode on the electrode layer, and forming a negative electrode on the high-conductivity substrate; specifically, as shown in fig. 1, a heavily doped N-type absorption layer, an intrinsic barrier layer, a heavily doped N-type electrode layer, and a silicon nitride passivation layer are sequentially formed on an N-type high conductivity gallium arsenide substrate, and then a positive electrode is formed on the heavily doped N-type electrode layer, and a negative electrode is formed on the N-type high conductivity gallium arsenide substrate.
Step S2: constructing a corresponding physical model according to the structural model of the BIB detector;
specifically, a simultaneous Poisson equation, an equation of continuity of electrons and holes, an equation of current density of electrons and holes, and a carrier recombination rate and a photogenerated carrier generation rate are added into the equation of continuity by generating a recombination term, wherein the carrier recombination term comprises SRH recombination, radiative recombination and Auger recombination, the generation rate of the photogenerated carrier is described by a coupling absorption coefficient model by the photogenerated carrier generation term, in addition, a low-temperature freezeout effect, a potential barrier tunneling effect and a speed saturation effect of carriers need to be considered, and a finite element method is used for discretizing simultaneous iterative solution.
Step S3: growing an experimental measurement sample, extracting key material parameters of a physical model of the BIB detector, and completing construction of a numerical model of the BIB detector;
specifically, a heavily doped absorption layer and an intrinsic barrier layer are sequentially grown on a high-conductivity substrate to serve as experimental measurement samples, key material parameters of a physical model of the BIB detector are extracted, and the construction of a numerical model of the BIB detector is completed, wherein the key material parameters comprise: the carrier mobility and the service life of the sample, the doping concentration and the thickness of the substrate, the doping concentration and the thickness of the absorption layer and the doping concentration and the thickness of the barrier layer;
further, a Metal Organic Chemical Vapor Deposition (MOCVD) process is adopted, a heavily doped N-type absorption layer and an intrinsic barrier layer are sequentially grown on the N-type high-conductivity gallium arsenide substrate, and then the electron mobility mu is obtained by adopting a low-temperature Hall test methode＝6.71×105cm2Vs, hole mobility μh＝3.86×106cm2Vs, electron lifetime τe＝1×10-9s, hole lifetime τh＝1×10-9s, obtaining substrate doping concentration N by adopting an extended resistance analysis methodS＝4×1018cm-3Thickness of substrate hS350 μm, absorption layer doping concentration NA＝5×1015cm-3Thickness h of the absorption layerA35 μm, barrier doping concentration NB＝1×1013cm-3Thickness h of the barrier layerBAnd 8 μm, thereby completing the extraction of key material parameters of the physical model of the BIB detector.
Step S4: the far infrared radiation is vertically irradiated onto the BIB detector from the front side, and a fixed bias voltage U capable of enabling the BIB detector to normally work is selected according to the key material parameters of the physical model extracted in the step S3FThe current positive electrode bias voltage U is obtained from the numerical model constructed in step S3A＝UFThe spectral response curve of the BIB detector is a curve of the spectral response rate R of the BIB detector changing along with the incident wavelength lambda;
specifically, a fixed bias U is selected to enable the BIB detector to work normallyFWhen the positive electrode bias U is obtained by numerical simulation at 1VA＝UFThe spectral response curve of the BIB detector at 1V is shown in fig. 2 by the white circle symbol.
Step S5: changing the thickness of the absorption layer of the numerical model in step S4 to obtain the current positive electrode bias UA＝UFA series of curves of spectral response of the BIB detector corresponding to different absorption layer thicknesses; specifically, as shown in fig. 2.
Step S6: biasing the current positive electrode obtained in step S5 to UA＝UFThen, a series of curves of spectral responsivity of the BIB detector corresponding to different absorption layer thicknesses are subjected to peak value normalization processing to obtain a current positive electrode bias voltage UA＝UFThen, normalizing a series of curves of spectral response of the BIB detector corresponding to different absorption layer thicknesses; specifically, as shown in fig. 3.
Step S7: when the positive electrode bias voltage U is extractedA＝UFTime, response bandwidth BWRAccording to the thickness h of the absorbing layerAObtaining a fitted positive electrode bias voltage U according to the changed curveFLower response bandwidth BWRAccording to the thickness h of the absorbing layerAFunctional BW of a varying curveR(hA)；
Specifically, the current positive electrode bias voltage U obtained in step 6A＝UFWhen the voltage is 1V, extracting the response bandwidth BW under the bias of the 1V positive electrode from a series of curves of normalized spectral response of the BIB detector corresponding to different absorption layer thicknessesRAccording to the thickness h of the absorbing layerAThe curve of the change, as shown in FIG. 4, is obtained by fitting the response bandwidth BW under 1V positive electrode biasRAccording to the thickness h of the absorbing layerAThe variation curve is used for obtaining the response bandwidth BW under the bias of the positive electrode of 1VRWith respect to different absorption layer thicknesses hAFunction of (BW)R(hA)：
BWR(hA)＝101.28583+0.68641hA。
Step S8: the current positive electrode bias voltage U is obtained from the numerical model constructed in step S3A＝UFThe electric field intensity distribution curve of the time BIB detector; specifically, the current positive electrode bias voltage U is obtained by numerical simulationA＝UFThe electric field intensity distribution curve of the BIB detector at 1V is shown by the curve marked by the black diamond symbols in fig. 5.
Step S9: changing the thickness of the absorption layer of the numerical model in step S8 to obtain the current positive electrode bias UA＝UFA series of curves of the electric field intensity distribution of the BIB detector corresponding to different absorption layer thicknesses; specifically, as shown in fig. 5.
Step S10: the current positive electrode bias voltage U is obtained from the numerical model constructed in step S3A＝UFThe charge carrier mobility distribution curve of the time-BIB detector; specifically, the current positive electrode bias voltage U is obtained by numerical simulationA＝UFThe carrier mobility profile of the BIB detector at 1V is shown by the black diamond-shaped symbol in figure 6.
Step S11: changing the thickness of the absorption layer of the numerical model in step S10 to obtain the current positive electrode bias UA＝UFA series of curves of BIB detector carrier mobility distribution corresponding to different absorption layer thicknesses; specifically, as shown in fig. 6.
Step S12: according to carrier mean transit timeThe corresponding relationship between t and the electric field strength E and the carrier mobility μ is utilized, and the current positive electrode bias U obtained in step S9 is utilizedA＝UFA series of curves of the electric field intensity distribution of the BIB detector corresponding to different absorption layer thicknesses and the current positive electrode bias voltage U obtained in step S11A＝UFObtaining a series of curves of BIB detector carrier mobility distribution corresponding to different absorption layer thicknesses to obtain fitting positive electrode bias voltage UFAverage transit time t of lower carrier with thickness h of absorbing layerAFunction t (h) of the curve of variationA)；
Specifically, the average transit time t of the carrier is related to the electric field intensity E and the carrier mobility μ
And using the current positive electrode bias voltage U obtained in step S9A＝UFA series of curves of the electric field intensity distribution of the BIB detector corresponding to different absorption layer thicknesses (as shown in fig. 5) at 1V, and the current positive electrode bias U obtained in step S11A＝UFA series of curves (as shown in fig. 6) of the carrier mobility distribution of the BIB detector corresponding to different absorption layer thicknesses when the voltage is 1V are obtained, and the average transit time t of the carriers under the bias of the 1V positive electrode along with the thickness h of the absorption layer is obtainedAThe curve of the change, as shown in FIG. 7, is obtained by fitting the average transit time t of the carriers with the thickness h of the absorber layer under a 1V positive electrode biasAObtaining the average transition time t of the current carriers under the bias voltage of the 1V positive electrode and the thickness h of different absorption layersAIs a function of t (h)A)：
t(hA)＝1.02315×10-6exp(hA/30.64871)+6.21617×10-7。
Step S13: based on the transmission bandwidth BWTCorrespondence with the carrier average transit time t and the functional expression t (h) obtained in step S12A) To obtain a positive electrode bias voltage UFLower transmission bandwidth BWTAccording to the thickness h of the absorbing layerAVariable functional BWT(hA)；
In particular, according to the transmission bandwidth BWTAnd current carryingCorrespondence BW of sub-average transition time t T1/t and the functional formula t (h) obtained in step S12A) To obtain the transmission bandwidth BW under the bias of the positive electrode with 1VTAccording to the thickness h of the absorbing layerAVariable functional BWT(hA)：
Step S14: defining a detector comprehensive bandwidth figure of merit (FOM) and acquiring a curve of the FOM changing along with the thickness of the absorbing layer; in particular, a response bandwidth BW is definedRAnd transmission bandwidth BWTThe product of the n powers ofR·(BWT)nIntegrating a bandwidth figure of merit for the detector, wherein n is a weight factor of the transmission bandwidth;
further, the response bandwidth BW obtained by the step S7R(hA) The transmission bandwidth BW obtained by multiplying the step S13T(hA) N, wherein n takes a value of 0.2, to obtain a detector integrated bandwidth merit factor FOM for different absorption layer thicknesses hAThe function of (a):
further, a curve of the figure of merit factor of the integrated bandwidth of the detector along with the variation of the thickness of the absorption layer is obtained, as shown in fig. 8.
Step S15: determining the thickness of the absorption layer corresponding to the optimal comprehensive bandwidth according to a curve of the optimal factor of the comprehensive bandwidth of the detector along with the change of the thickness of the absorption layer; specifically, the thickness h of the absorption layer corresponding to the optimal integrated bandwidth is determined according to fig. 8A＝35.4μm。
Step S16: adopting the same material system and process conditions as those of the experimental measurement sample in the step S3 to sequentially grow an absorption layer and a barrier layer on the high-conductivity substrate, wherein the thickness of the absorption layer is designed to be the thickness h of the absorption layer corresponding to the optimal comprehensive bandwidth obtained in the step S15A35.4 μm, marking, ion implanting, and table topEtching, electrode manufacturing, surface passivation, corrosion tapping and electrode thickening processes are carried out to complete the manufacture of the BIB detector;
furthermore, the BIB detector is manufactured by utilizing the thickness of the absorption layer corresponding to the optimal comprehensive bandwidth obtained by the method for optimizing the comprehensive bandwidth of the far infrared impurity band detector, and the method comprises the following steps:
step A1: adopting the same material system and process conditions as the experimental measurement sample in the step S3, namely adopting a Metal Organic Chemical Vapor Deposition (MOCVD) process, sequentially growing a heavily doped N-type absorption layer with the thickness of 35.4 mu m and an intrinsic barrier layer with the thickness of 8 mu m on an N-type high-conductivity gallium arsenide substrate with the thickness of 350 mu m, wherein the doping concentrations of the substrate, the absorption layer and the barrier layer are respectively 4 multiplied by 1018cm-3、5×1015cm-3And 1X 1013cm-3；
Step A2: obtaining a mark area window on the barrier layer through a photoetching process, depositing Ni/Au double-layer metal by adopting an electron beam evaporation process, and then stripping with acetone to form a photoetching mark;
step A3: obtaining a window required by ion implantation on the barrier layer through a photoetching process, implanting silicon ions into the window area, and then forming an electrode layer through a rapid thermal annealing process;
step A4: obtaining a window required by etching on the electrode layer through a photoetching process, and longitudinally etching by 45 microns by adopting an inductively coupled plasma etching process to remove the electrode layer, the barrier layer and the absorption layer in the window area to form a photosensitive table top;
step A5: obtaining windows of a positive electrode area and a negative electrode area by utilizing a photoetching process, depositing three layers of Ni/Ge/Au metal by adopting an electron beam evaporation process, and then forming a positive ohmic contact electrode and a negative ohmic contact electrode after acetone stripping and annealing processes;
step A6: growing a silicon nitride passivation layer with the thickness of 500nm by adopting a plasma enhanced chemical vapor deposition process;
step A7: forming windows required for corrosion in the positive electrode area and the negative electrode area by utilizing a photoetching process, and then corroding silicon nitride in the electrode area by using a hydrofluoric acid buffer solution to finish electrode opening;
step A8: and obtaining the windows of the positive electrode area and the negative electrode area again by utilizing a photoetching process, depositing Ni/Au double-layer metal by adopting an electron beam evaporation process, and stripping by acetone to finish electrode thickening. And finishing the manufacture of the GaAs-based BIB detector with the optimal comprehensive bandwidth.
Those skilled in the art will appreciate that, in addition to implementing the system and its various devices, modules, units provided by the present invention as pure computer readable program code, the system and its various devices, modules, units provided by the present invention can be fully implemented by logically programming method steps in the form of logic gates, switches, application specific integrated circuits, programmable logic controllers, embedded microcontrollers and the like. Therefore, the system and various devices, modules and units thereof provided by the invention can be regarded as a hardware component, and the devices, modules and units included in the system for realizing various functions can also be regarded as structures in the hardware component; means, modules, units for performing the various functions may also be regarded as structures within both software modules and hardware components for performing the method.
In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.
Claims (10)
1. A method for optimizing the comprehensive bandwidth of a far infrared blocking impurity band detector is characterized by comprising the following steps:
a curve acquisition step: obtaining a curve of the optimal value factor of the comprehensive bandwidth of the impurity band blocking detector along with the change of the thickness of the absorption layer through numerical simulation and data fitting;
and a thickness calculation step: and extracting the thickness of the absorption layer corresponding to the optimal comprehensive bandwidth according to the curve, wherein the thickness of the absorption layer is used for manufacturing a blocking impurity band detector.
2. The method for optimizing the comprehensive bandwidth of the far infrared blocking impurity band detector as claimed in claim 1, wherein the method specifically comprises:
step 1: constructing a structural model of the impurity blocking band detector;
step 2: constructing a corresponding physical model according to the structural model of the impurity blocking band detector;
and step 3: growing an experimental measurement sample, extracting key material parameters of a physical model of the impurity-blocking band detector, and completing construction of a numerical model of the impurity-blocking band detector;
and 4, step 4: the far infrared radiation is vertically irradiated to the impurity band blocking detector from the front side, and a fixed bias voltage U capable of enabling the impurity band blocking detector to normally work is selected according to the key material parameters of the physical model extracted in the step 3FObtaining the current positive electrode bias voltage U from the numerical model constructed in step 3A＝UFThe spectral response curve of the time blocking impurity band detector is a curve of the spectral response rate R of the time blocking impurity band detector changing along with the incident wavelength lambda;
and 5: changing the thickness of the absorption layer of the numerical model in the step 4 to obtain the current positive electrode bias voltage UA＝UFThe spectral response of the impurity band blocking detector corresponding to different absorption layer thicknesses is a series of curves;
step 6: biasing the current positive electrode obtained in step 5 to a voltage UA＝UFA series of curves of spectral responsivity of the impurity band blocking detector corresponding to different absorption layer thicknessesThe line is subjected to peak value normalization processing to obtain a current positive electrode bias voltage UA＝UFThen, a series of curves of normalized spectral response of the blocking impurity band detector corresponding to different absorption layer thicknesses are obtained;
and 7: when the positive electrode bias voltage U is extractedA＝UFTime, response bandwidth BWRAccording to the thickness h of the absorbing layerAObtaining a fitted positive electrode bias voltage U according to the changed curveFLower response bandwidth BWRAccording to the thickness h of the absorbing layerAFunctional BW of a varying curveR(hA) Wherein the response bandwidth is the full width at half maximum of the normalized spectral response curve of the blocking impurity band detector;
and 8: obtaining the current positive electrode bias voltage U by the numerical model constructed in the step 3A＝UFThe electric field intensity distribution curve of the blocking impurity band detector is a curve of the electric field intensity E of the blocking impurity band detector changing along with the longitudinal position Y;
and step 9: changing the thickness of the absorption layer of the numerical model in step 8 to obtain the current positive electrode bias voltage UA＝UFThen, a series of curves of the electric field intensity distribution of the impurity band blocking detector corresponding to different absorption layer thicknesses are obtained;
step 10: obtaining the current positive electrode bias voltage U by the numerical model constructed in the step 3A＝UFBlocking a carrier mobility distribution curve of the impurity band detector, wherein the carrier mobility distribution curve is a curve of carrier mobility mu of the impurity band detector along with change of a longitudinal position Y;
step 11: changing the thickness of the absorption layer of the numerical model in step 10 to obtain the current positive electrode bias UA＝UFThe distribution of the carrier mobility of the impurity band detector is blocked by a series of curves corresponding to different absorption layer thicknesses;
step 12: according to the corresponding relationship between the average transit time t of the carrier and the electric field intensity E and the carrier mobility mu, the current positive electrode bias voltage U obtained in the step 9 is utilizedA＝UFA series of curves of the electric field intensity distribution of the impurity band blocking detector corresponding to different absorption layer thicknesses and obtained in step 11To when the positive electrode is biased UA＝UFObtaining a series of curves of carrier mobility distribution of the impurity band detector corresponding to different absorption layer thicknesses to obtain fitting positive electrode bias voltage UFAverage transit time t of lower carrier with thickness h of absorbing layerAFunction t (h) of the curve of variationA)；
Step 13: based on the transmission bandwidth BWTCorresponding relation with carrier average transit time t and functional formula t (h) obtained in step 12A) To obtain a positive electrode bias voltage UFLower transmission bandwidth BWTAccording to the thickness h of the absorbing layerAVariable functional BWT(hA)；
Step 14: defining a detector comprehensive bandwidth figure of merit (FOM) and acquiring a curve of the FOM changing along with the thickness of the absorbing layer; in particular, a response bandwidth BW is definedRAnd transmission bandwidth BWTProduct of the n-th power of BWR·(BWT)nIntegrating a bandwidth figure of merit for the detector, wherein n is a weight factor of the transmission bandwidth;
step 15: determining the thickness of the absorption layer corresponding to the optimal comprehensive bandwidth according to a curve of the optimal factor of the comprehensive bandwidth of the detector along with the change of the thickness of the absorption layer;
step 16: and (3) sequentially growing an absorption layer and a barrier layer on the high-conductivity substrate by adopting the same material system and process conditions as those of the experimental measurement sample in the step (3), wherein the thickness of the absorption layer is designed to be the thickness of the absorption layer corresponding to the optimal comprehensive bandwidth obtained in the step (15), and then finishing the manufacture of the impurity band blocking detector.
3. The method for optimizing the comprehensive bandwidth of a far infrared blocking impurity band detector as claimed in claim 2, wherein the step 1 comprises:
step 1.1: sequentially forming an absorption layer, a barrier layer, an electrode layer and a passivation layer on a high-conductivity substrate;
step 1.2: a positive electrode is formed on the electrode layer, and a negative electrode is formed on the high-conductivity substrate.
4. The method for optimizing the comprehensive bandwidth of a far infrared blocking impurity band detector as claimed in claim 2, wherein the step 2 comprises: the method comprises the steps of establishing a simultaneous Poisson equation, an electron-hole continuity equation, an electron-hole current density equation, adding a carrier recombination rate and a photogenerated carrier generation rate into the continuity equation through generating a recombination term, wherein the recombination term comprises SRH recombination, radiative recombination and Auger recombination, describing the carrier generation rate through a coupling absorption coefficient model by the photogenerated carrier generation term, and discretizing simultaneous iterative solution by a finite element method by considering the low-temperature freezeout effect, the potential barrier tunneling effect and the speed saturation effect of the carriers.
5. The method for optimizing the comprehensive bandwidth of a far infrared blocking impurity band detector as claimed in claim 2, wherein the step 3 comprises: growing an absorption layer and a barrier layer on a high-conductivity substrate in sequence to serve as experimental measurement samples, extracting key material parameters of a physical model of the impurity band blocking detector, and completing construction of a numerical model of the impurity band blocking detector, wherein the key material parameters comprise: the carrier mobility and the lifetime of the sample, the doping concentration and the thickness of the substrate, the doping concentration and the thickness of the absorption layer and the doping concentration and the thickness of the barrier layer.
6. The method for optimizing the integrated bandwidth of a far infrared blocking impurity band detector as set forth in claim 2, wherein said step 7 comprises: current positive electrode bias voltage U obtained in step 6A＝UFExtracting positive electrode bias voltage U from a series of curves of normalized spectral response of impurity-blocking band detectors corresponding to different absorption layer thicknessesFLower response bandwidth BWRAccording to the thickness h of the absorbing layerACurve of variation by fitting the positive electrode bias voltage UFLower response bandwidth BWRAccording to the thickness h of the absorbing layerAThe changing curve is used for obtaining the positive electrode bias voltage UFLower response bandwidth BWRWith respect to different absorption layer thicknesses hAFunction of (BW)R(hA)。
7. According to the claims2, the method for optimizing the comprehensive bandwidth of the far infrared blocking impurity band detector is characterized in that the step 12 comprises the following steps: according to the corresponding relation between the average transition time t of the carrier and the electric field intensity E and the carrier mobility mu
And using the current positive electrode bias voltage U obtained in step 9A＝UFA series of curves of electric field intensity distribution of the impurity band blocking detector corresponding to different absorption layer thicknesses, and the current positive electrode bias voltage U obtained in step 11A＝UFObtaining a series of curves of the carrier mobility distribution of the impurity band detector corresponding to different absorption layer thicknesses to obtain positive electrode bias voltage UFAverage transit time t of lower carrier with thickness h of absorbing layerACurve of variation by fitting the positive electrode bias voltage UFAverage transit time t of lower carrier with thickness h of absorbing layerAThe changing curve is used for obtaining the positive electrode bias voltage UFAverage transit time t of lower carriers with respect to different absorber layer thicknesses hAIs a function of t (h)A)。
8. The method for optimizing the integrated bandwidth of a far infrared blocking impurity band detector as set forth in claim 2, wherein said step 13 comprises: based on the transmission bandwidth BWTCorrespondence BW with carrier average transit time tT1/t and the functional formula t (h) obtained in step 12A) To obtain a positive electrode bias voltage UFLower transmission bandwidth BWTAccording to the thickness h of the absorbing layerAVariable functional BWT(hA)。
9. The method for optimizing the integrated bandwidth of a far infrared blocking impurity band detector as set forth in claim 2, wherein said step 14 comprises: response Bandwidth BW obtained by step 7R(hA) Multiplying the transmission bandwidth BW obtained in the step 13T(hA) To the power of n, obtaining the optimal value factor FOM of the comprehensive bandwidth of the detector relative to the thickness h of different absorption layersABy FOM (h)A)，And then obtaining a curve of the change of the optimal value factor of the comprehensive bandwidth of the detector along with the thickness of the absorption layer.
10. A system for optimizing the integrated bandwidth of a far infrared blocking contaminant band detector, comprising:
a curve acquisition module: obtaining a curve of the optimal value factor of the comprehensive bandwidth of the impurity band blocking detector along with the change of the thickness of the absorbing layer through numerical simulation and data fitting,
a thickness calculation module: and extracting the thickness of the absorption layer corresponding to the optimal comprehensive bandwidth according to the curve, wherein the thickness of the absorption layer is used for manufacturing a blocking impurity band detector.
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