CN110188379A - The optimization method and device of far infrared blocking impurity band detector absorber thickness - Google Patents
The optimization method and device of far infrared blocking impurity band detector absorber thickness Download PDFInfo
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
- 239000000463 material Substances 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
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- 238000012360 testing method Methods 0.000 description 3
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- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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Abstract
The present invention provides a kind of optimization method and device of far infrared blocking impurity band detector absorber thickness, includes the following steps: the parameter for obtaining the physical model for stopping impurity band detector, and building stops the numerical model of impurity band detector；The curve for stopping the response rate R of impurity band detector to change with incident wavelength λ is obtained according to the numerical model；The thickness for changing the absorbed layer in numerical model obtains corresponding spectral responsivity curve, obtains the peak wavelength λ of spectral responsivity curveP；Obtain fitting positive electrode bias UFLower peak response rate RPWith absorber thickness TAbsThe functional expression of the curve of variation；It obtains fitting and stops impurity band detector production cost CmWith absorber thickness TAbsThe functional expression of the curve of variation；Optimal absorption thickness degree is obtained according to the functional expression of acquisition.The present invention, which has the advantage that, to be fitted to obtain functional expression of the sexual valence specific factor of detector about different absorber thickness by numerical simulation and data, extracts optimal absorption thickness degree according to the functional expression.
Description
Technical field
The present invention relates to semiconductor photodetector technologies, specifically, stop impurity band to be visited more particularly to a kind of far infrared
Survey the optimization method and device of device absorber thickness.
Background technique
Far infrared generally refers to wavelength between 25 microns~500 microns of electromagnetic wave.Far infrared, which has, significantly to be worn
Saturating ability and fingerprint characteristic, therefore before the fields such as astronomical observation, atmospheric monitoring and prohibited items detection are with wide application
Scape.In astronomical observation field, almost all of planet and cosmic dust have apparent characteristic absorption peak in far infrared band, and
And can be emitting far-infrared by intramolecule rotation and vibration gaseous state nebula, therefore height may be implemented using far infrared deterctor
Performance deep space exploration.In atmospheric monitoring field, compared to traditional near-infrared and middle infrared technique, far infrared detection can not only be received
Collect stratospheric information, and investigative range can be extended to troposphere, therefore environment can be promoted using far infrared deterctor and supervised
Survey and atmospheric analysis ability.In prohibited items detection field, the prohibited items such as explosive and drugs have all in far infrared band
More absorption peaks, these absorption peaks can be used as fingerprint characteristic explosive and drugs for identification, therefore utilize far infrared deterctor
The monitoring of new generation of city public safety and pre-alarming system can be constructed.
Stopping impurity band (BIB) detector is a kind of far infrared deterctor, its advantage is detectivity height, array
Scale is big and response spectral coverage is wide.It (is silicon substrate, germanium base and GaAs respectively that BIB detector can be divided into three classes from material angle
Base), the spectral response of silicon substrate BIB detector can cover 5 microns~40 microns, and technology is the most mature in three classes detector and answers
With the most extensively, this is mainly attributed to the good uniformity of silicon materials, stability and reliability.Although silicon substrate BIB detector can
With by adulterating a variety of III group or V group element (such as: phosphorus, boron, gallium) Lai Shixian to silicon materials, but silicon mixes arsenic (Si:As) and silicon
Mixing two kinds of detectors of antimony (Si:Sb) is still the BIB detector that current performance is best, most widely used, is appointed in multinomial space science
Application is obtained in business.The extensible response wave length of germanium base BIB detector is to 200 microns, current state-of-the-art germanium base BIB detector
It is developed by Japanese space agency, and has disposed and be carried in the infrared telescope in space SPICA that will emit.GaAs base BIB
Detector can further extend response wave length to 500 microns, and wavelength extends ability and attracted academia and engineering circles
Common concern.
For the absorbed layer of BIB detector as one of key function layer, effect is to convert far infrared radiation to photoproduction load
Stream, then transports photo-generated carrier under the action of electric field, so that detector completion is subsequent to photo-generated carrier
Collection process.Absorber thickness, which has the cost performance of BIB detector, to be significantly affected, if on the one hand absorber thickness is too thin,
The incident photon-to-electron conversion efficiency of far infrared radiation will reduce；If on the other hand absorber thickness is too thick, photo-generated carrier transports effect
Rate will decline and the production cost of detector will increase, therefore optimize to the absorber thickness of BIB detector just aobvious
It obtains particularly important.In practical application, in order to obtain optimal absorption thickness degree and improve the cost performance of BIB detector, the prior art
It is to be used on a selective basis after BIB detector is carried out multiple test piece, the time is higher with economic cost.
Summary of the invention
For the defects in the prior art, it is an object of that present invention to provide a kind of far infrared resistances for solving above-mentioned technical problem
Keep off the optimization method and device of impurity band detector absorber thickness.
In order to solve the above technical problems, far infrared of the present invention stops the optimization method of impurity band detector absorber thickness,
Include the following steps:
Step 1, the parameter for stopping the physical model of impurity band detector is obtained, building stops the numerical value of impurity band detector
Model；
Step 2, changed according to the response rate R that the numerical model obtains blocking impurity band detector with incident wavelength λ
Curve, the response rate R are spectral responsivity curve with the curve that incident wavelength λ changes；
Step 3, the thickness for changing the absorbed layer in numerical model obtains corresponding spectral responsivity curve, obtains spectrum and rings
Should rate curve peak wavelength λP；
Step 4, fitting positive electrode bias U is obtainedFLower peak response rate RPWith absorber thickness TAbsThe letter of the curve of variation
Numerical expression RP(TAbs)；
Step 5, it obtains fitting and stops impurity band detector production cost CmWith absorber thickness TAbsThe letter of the curve of variation
Numerical expression Cm(TAbs)；
Step 6, optimal absorption thickness degree is obtained according to the functional expression that step 4 and step 5 obtain.
Preferably, step 1 includes:
Step 1.1, building stops the structural model of impurity band detector；
Step 1.2, according to the structural model building physical model for stopping impurity band detector；
Step 1.3, the parameter for stopping the physical model of impurity band detector is obtained, building stops the number of impurity band detector
It is worth model.
Preferably, step 2 includes:
Step 2.1, far infrared radiation is irradiated to from front vertical and is stopped on impurity band detector；
Step 2.2, it obtains and works as UA=UFWhen stop the curve that changes with incident wavelength λ of response rate R of impurity band detector；
Wherein
UAFor the positive electrode bias for stopping impurity band detector, UFTo stop the fixation of impurity band detector normal work inclined
Pressure.
Preferably, step 3 includes:
Step 3.1, change the thickness of the absorbed layer in numerical model；
Step 3.2, the corresponding curve for stopping impurity band detector spectral response rate of different absorber thickness is obtained；
Step 3.3, the peak wavelength λ for stopping the curve of impurity band detector spectral response rate is obtainedP。
Preferably, step 4 includes:
Step 4.1, peak response rate R is obtainedPWith absorber thickness TAbsThe curve of variation；
Step 4.2, fitting positive electrode bias U is obtainedFLower peak response rate RPWith absorber thickness TAbsThe curve of variation
Functional expression；Wherein
Peak response rate RPWith peak wavelength λPIt is corresponding.
Preferably, step 5 includes:
Step 5.1, it obtains and stops impurity band detector production cost CmWith absorber thickness TAbsThe curve of variation；
Step 5.2, it obtains fitting and stops impurity band detector production cost CmWith absorber thickness TAbsThe curve of variation
Function.
Preferably, step 6 includes:
Step 6.1, peak response rate R is definedPWith detector production cost CmQuotient, i.e. RP/CmFor detector cost performance because
Son, the functional expression R as obtained by step 4P(TAbs) divided by step 5 gained functional expression Cm(TAbs), obtain detector sexual valence specific factor
RP/CmWith absorber thickness TAbsThe curve of variation,；
Step 6.2, according to detector cost performance factor RP/CmWith absorber thickness TAbsThe curve of variation, by RP/CmIt takes most
Corresponding T when big valueAbsIt is determined as optimal absorption thickness degree.
Preferably, structural model includes:
High conductive substrate；
Absorbed layer, barrier layer and electrode layer, absorbed layer, barrier layer and electrode layer are sequentially laminated in high conductive substrate；
Contact hole, contact hole perforation are arranged on absorbed layer, barrier layer, electrode layer；
Passivation layer, passivation layer deposition is in absorbed layer, barrier layer, electrode layer and high conductive substrate；
Electrode group, electrode group setting are connect in high conductive substrate and electrode layer, respectively with high conductive substrate and electrode layer.
Preferably, electrode group includes positive electrode and negative electrode；Positive electrode is formed on electrode layer, is formed in high conductive substrate
Negative electrode.
A kind of device, device stop the optimization method of impurity band detector absorber thickness to be fabricated by far infrared.
Compared with prior art, the present invention has the advantage that
1) the present invention provides optimization far infrared stop impurity band detector absorber thickness method, pass through number first
Value simulation and data are fitted to obtain functional expression of the sexual valence specific factor of detector about different absorber thickness, and then according to described
Functional expression extracts optimal absorption thickness degree, then the cost performance highest of the blocking impurity band detector made according to the thickness, from
And impurity band detector is stopped to provide reliable foundation to design and making high performance-price ratio far infrared.
2) the present invention provides optimization far infrared stop the method for impurity band detector absorber thickness, can be for not
Same material system (including: silicon substrate, germanium base and GaAs base) and different technology conditions (include: process for vapor phase epitaxy, liquid phase epitaxy
Technique and molecular beam epitaxial process) obtained blocking impurity band detector extracts corresponding optimal absorption thickness degree, thus sets
It counts and the detector that makes has high response rate while also has low production cost, and can be avoided to improve device
Cost performance carries out test piece repeatedly, therefore the present invention also has the advantages that the R&D cycle is short and researches and develops at low cost.
Detailed description of the invention
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other feature mesh of the invention
And advantage will become more apparent upon.
Fig. 1 is the structural schematic diagram that far infrared stops impurity band (BIB) detector；
Fig. 2 is as positive electrode bias UAThe one of the corresponding BIB detector spectral response rate of difference absorber thickness when=1V
Serial curve；
Fig. 3 is as positive electrode bias UAThe matched curve that peak response rate changes with absorber thickness when=1V；
Fig. 4 is as positive electrode bias UAThe matched curve that detector production cost changes with absorber thickness when=1V；
Fig. 5 is the curve that detector sexual valence specific factor changes with absorber thickness；
Fig. 6 is flow chart.
In figure:
1- passivation layer 2- negative electrode 3- positive electrode
The barrier layer 4- electrode layer 5- 6- absorbed layer
7- high conductive substrate
Specific embodiment
The present invention is described in detail combined with specific embodiments below.Following embodiment will be helpful to the technology of this field
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, several variations can also be made and changed.
As shown in Fig. 1~Fig. 6, the optimization far infrared provided according to the present invention stops impurity band (BIB) detector absorbed layer
The method of thickness, this method are fitted to obtain BIB detector peak response rate and production cost with suction by numerical simulation and data
Receive the rule of layer thickness variation.In order to make detector obtain highest cost performance, defines peak response rate and be produced into detector
The quotient of sheet is detector sexual valence specific factor, has been determined by analysis detector sexual valence specific factor with the rule that absorber thickness changes
Optimal absorption thickness degree, and then designed according to the result after optimization and made far infrared BIB detector.Such as Fig. 1 to Fig. 5 institute
Show, detailed step is as follows:
Step S1: building stops the structural model of impurity band (BIB) detector；
Absorbed layer, barrier layer, electrode layer and passivation layer are sequentially formed in high conductive substrate, are then formed on electrode layer
Positive electrode, and negative electrode is formed in high conductive substrate；Specifically, as shown in Figure 1, being led in gallium arsenide substrate successively in N-type height
Formed the N-type absorbed layer of heavy doping, intrinsic barrier layer, heavy doping N-type electrode layer and silicon nitride passivation, then heavily doped
Positive electrode is formed on miscellaneous N-type electrode layer, and leads in N-type height and forms negative electrode in gallium arsenide substrate, thus completes GaAs
The building of base BIB panel detector structure model.
Step S2: corresponding physical model is constructed according to the structural model of BIB detector；
Specifically, simultaneous Poisson's equation, electronics and the continuity equation in hole, electronics and the equation of current density in hole,
And continuity equation is added by generating compound term in Carrier recombination rate and photo-generated carrier generation rate, wherein carrier is multiple
Closing item includes SRH compound, radiation recombination and auger recombination, and photo-generated carrier generates item by coupling absorption coefficient model to describe
Its generation rate additionally needs the low temperature freeze-out effect, tunnel penetration effect and speed saturation effect, the use that consider carrier limited
First method discretization simultaneous iteration solves.
Step S3: production BIB detector samples are extracted the critical material parameter of the physical model of BIB detector, are completed
The building of BIB detector numerical model；
Specifically, BIB detector samples are made in high conductive substrate, extract the crucial material of the physical model of BIB detector
Expect parameter, complete BIB detector numerical model building, the critical material parameter include: sample carrier mobility and
Service life, substrate doping and thickness, absorbed layer doping concentration and thickness, barrier layer doping concentration and thickness.
Further, i.e., GaAs base BIB detector samples are made in the high conductive substrate of N-type GaAs, are then used
The method of low temperature Hall test obtains electron mobility μe=6.71 × 105cm2/ Vs, hole mobility μh=3.86 × 106cm2/
Vs, electron lifetime τe=1 × 10-9S, hole life τh=1 × 10-9S obtains substrate doping using the method that spreading resistance is analyzed
Concentration NSub=4 × 1018cm-3, substrate thickness TSub=350 μm, absorbed layer doping concentration NAbs=5 × 1015cm-3, absorb thickness
Spend TAbs=35 μm, barrier layer doping concentration NBlo=1 × 1013cm-3, barrier layer thickness TBlo=8 μm, thus complete GaAs base
The extraction of the critical material parameter of BIB detector physical model.
Step S4: the object that far infrared radiation is irradiated on BIB detector from front vertical, and is extracted according to step S3
The critical material parameter of reason model chooses the fixed-bias transistor circuit U that BIB detector can be made to work normallyF, constructed by step S3
Numerical model is obtained as positive electrode bias UA=UFWhen BIB detector spectral responsivity curve, the spectral responsivity curve is
The curve changed for BIB detector response rate R with incident wavelength λ；
Specifically, the fixed-bias transistor circuit U that GaAs base BIB detector can be made to work normally is chosenF=1V, by Numerical-Mode
It is quasi- to obtain as positive electrode bias UA=UFThe spectral responsivity curve of GaAs base BIB detector when=1V, as in Fig. 2 it is hollow fall
Shown in the curve of triangle mark.
Step S5: changing the step the absorber thickness of numerical model described in S4, obtains as positive electrode bias UA=UFWhen,
Then it is a series of to extract spectral responsivity for a series of curves of the corresponding BIB detector spectral response rate of different absorber thickness
The peak wavelength λ of curveP, the peak wavelength is the corresponding incident wavelength of peak response；Specifically, as shown in Fig. 2, simultaneously thus
Extract peak wavelength λP=264 μm.
Step S6: it extracts and works as positive electrode bias UA=UFWhen, λPCorresponding peak response rate RPWith absorber thickness TAbsBecome
The curve of change obtains fitting positive electrode bias UFLower peak response rate RPWith absorber thickness TAbsThe functional expression R of the curve of variationP
(TAbs)；
Specifically, a system of the corresponding BIB detector spectral response rate of the different absorber thickness obtained in step s 5
In column curve, fixed positive electrode bias UAFor fixed-bias transistor circuit U described in step S4F=1V, and fixed incident wavelength λ is step S5
The λ of extractionP=264 μm, extract the corresponding peak response rate R of the lower 264 μm of incident wavelengths of 1V positive electrode biasPWith absorber thickness
TAbsThe curve of variation, as shown in figure 3, passing through the corresponding peak response rate R of the fitting lower 264 μm of incident wavelengths of 1V positive electrode biasP
With absorber thickness TAbsThe curve of variation obtains peak response rate RPAbout different absorber thickness TAbsFunctional expression RP
(TAbs):
RP(TAbs)=- 0.23621+0.55322TAbs-0.00718(TAbs)2+3.0005×10-5(TAbs)3。
Step S7: a series of BIB detector samples of small-scale production difference absorber thickness are extracted detector and are produced into
This CmWith absorber thickness TAbsThe curve of variation obtains fitting detector production cost CmWith absorber thickness TAbsThe song of variation
The functional expression C of linem(TAbs)；
Specifically, a series of GaAs bases of small-scale production difference absorber thickness in gallium arsenide substrate are led in N-type height
BIB detector samples extract detector production cost CmWith absorber thickness TAbsThe curve of variation, as shown in figure 4, by quasi-
Close detector production cost CmWith absorber thickness TAbsThe curve of variation obtains detector production cost CmAbout different absorbed layers
Thickness TAbsFunctional expression Cm(TAbs):
Step S8: detector sexual valence specific factor is defined, and obtains detector sexual valence specific factor with absorber thickness TAbsVariation
Curve；
Specifically, peak response rate R is definedPWith detector production cost CmQuotient, i.e. RP/CmFor detector cost performance because
Son, the functional expression R as obtained by step S6P(TAbs) divided by functional expression C obtained by step S7m(TAbs), obtain detector sexual valence specific factor
With absorber thickness TAbsThe curve of variation, as shown in Figure 5.
Step S9: according to detector sexual valence specific factor with absorber thickness TAbsThe curve of variation determines optimal absorption thickness
Degree；
Specifically, as shown in figure 5, the detector cost performance factor R obtained according to step S8P/CmWith absorber thickness TAbs
The curve of variation, works as TAbsAt=36 μm, RP/CmTen thousand yuan of 1.96409A/W are maximized, that is, is directed to the GaAs of the present embodiment
Base BIB detector, optimal absorption layer is with a thickness of 36 μm.
Step S10: existed using material system identical with BIB detector samples in step S3 and step S7 and process conditions
Absorbed layer and barrier layer are successively grown in high conductive substrate, wherein absorber thickness is designed as the resulting optimal absorption thickness of step S9
Degree, by photo-etching mark production, electrode layer production, table top production, Ohmic electrode production, passivation layer production, electrode hole production and
It thickeies the techniques such as electrode fabrication and completes the production of BIB detector；
Further, the method for impurity band detector absorber thickness is stopped using optimization far infrared provided by the invention
Obtained optimal absorption thickness degree carries out the production of BIB detector, includes the following steps:
Step A1: use material system identical with experiment measurement sample in step S3 and process conditions in the N of 350 μ m-thicks
Type height leads the intrinsic blocking layer of heavily doped N-type absorbed layer and 8 μ m-thicks that 36 μ m-thicks are successively grown in gallium arsenide substrate, wherein serving as a contrast
The doping concentration at bottom, absorbed layer and barrier layer is respectively 4 × 1018cm-3、5×1015cm-3With 1 × 1013cm-3；
Step A2: marked region window is obtained by photoetching process over the barrier layer, is deposited using electron beam evaporation process
Then Ni/Au double-level-metal completes photo-etching mark production after acetone is removed；
Step A3: over the barrier layer by photoetching process obtain ion implanting needed for window, window area injection silicon from
Then son completes electrode layer production by rapid thermal anneal process；
Step A4: it is obtained on electrode layer by photoetching process and etches required window, carved using inductively coupled plasma
Etching technique longitudinally etches 46 μm of electrode layer, barrier layer and absorbed layers to remove window area, completes photosensitive table top production；
Step A5: obtaining positive and negative electrode regional window using photoetching process, deposits Ni/Ge/ using electron beam evaporation process
Then Au three-layer metal completes positive and negative Ohmic electrode production after acetone removing and annealing process；
Step A6: using plasma enhances the silicon nitride layer of chemical vapor deposition process growth 500nm thickness, completes passivation
Layer production；
Step A7: then window needed for being formed and corroded in positive and negative electrode region using photoetching process uses buffered hydrofluoric acid solution
The silicon nitride in corroding electrode region completes the production of positive and negative electrode hole；
Step A8: it obtains positive and negative electrode regional window again using photoetching process, is deposited using electron beam evaporation process
Then Ni/Au double-level-metal is completed to thicken electrode fabrication after acetone is removed.So far with the GaAs base of the best price/performance ratio
The production of BIB detector finishes.
The present invention also provides a kind of device, device is stopped the optimization method of impurity band detector absorber thickness by far infrared
It is fabricated.
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, those skilled in the art can make a variety of changes or modify within the scope of the claims, this not shadow
Ring substantive content of the invention.In the absence of conflict, the feature in embodiments herein and embodiment can any phase
Mutually combination.
Claims (10)
1. the optimization method that a kind of far infrared stops impurity band detector absorber thickness, which comprises the steps of:
Step 1, the parameter for stopping the physical model of impurity band detector is obtained, building stops the Numerical-Mode of impurity band detector
Type；
Step 2, the curve for stopping the response rate R of impurity band detector to change with incident wavelength λ is obtained according to the numerical model,
The response rate R is spectral responsivity curve with the curve that incident wavelength λ changes；
Step 3, the thickness for changing the absorbed layer in numerical model obtains corresponding spectral responsivity curve, obtains spectral responsivity
The peak wavelength λ of curveP；
Step 4, fitting positive electrode bias U is obtainedFLower peak response rate RPWith absorber thickness TAbsThe functional expression of the curve of variation
RP(TAbs)；
Step 5, it obtains fitting and stops impurity band detector production cost CmWith absorber thickness TAbsThe functional expression of the curve of variation
Cm(TAbs)；
Step 6, optimal absorption thickness degree is obtained according to the functional expression that step 4 and step 5 obtain.
2. far infrared according to claim 1 stops the optimization method of impurity band detector absorber thickness, feature exists
In step 1 includes:
Step 1.1, building stops the structural model of impurity band detector；
Step 1.2, according to the structural model building physical model for stopping impurity band detector；
Step 1.3, the parameter for stopping the physical model of impurity band detector is obtained, building stops the Numerical-Mode of impurity band detector
Type.
3. far infrared according to claim 1 stops the optimization method of impurity band detector absorber thickness, feature exists
In step 2 includes:
Step 2.1, far infrared radiation is irradiated to from front vertical and is stopped on impurity band detector；
Step 2.2, it obtains and works as UA=UFWhen stop the curve that changes with incident wavelength λ of response rate R of impurity band detector；Wherein
UAFor the positive electrode bias for stopping impurity band detector, UFFor the fixed-bias transistor circuit for stopping impurity band detector to work normally.
4. far infrared according to claim 1 stops the optimization method of impurity band detector absorber thickness, feature exists
In step 3 includes:
Step 3.1, change the thickness of the absorbed layer in numerical model；
Step 3.2, the corresponding curve for stopping impurity band detector spectral response rate of different absorber thickness is obtained；
Step 3.3, the peak wavelength λ for stopping the curve of impurity band detector spectral response rate is obtainedP。
5. far infrared according to claim 1 stops the optimization method of impurity band detector absorber thickness, feature exists
In step 4 includes:
Step 4.1, peak response rate R is obtainedPWith absorber thickness TAbsThe curve of variation；
Step 4.2, fitting positive electrode bias U is obtainedFLower peak response rate RPWith absorber thickness TAbsThe function of the curve of variation
Formula；Wherein
Peak response rate RPWith peak wavelength λPIt is corresponding.
6. far infrared according to claim 1 stops the optimization method of impurity band detector absorber thickness, feature exists
In step 5 includes:
Step 5.1, it obtains and stops impurity band detector production cost CmWith absorber thickness TAbsThe curve of variation；
Step 5.2, it obtains fitting and stops impurity band detector production cost CmWith absorber thickness TAbsThe function of the curve of variation.
7. far infrared according to claim 1 stops the optimization method of impurity band detector absorber thickness, feature exists
In step 6 includes:
Step 6.1, peak response rate R is definedPWith detector production cost CmQuotient, i.e. RP/CmFor detector sexual valence specific factor, lead to
Cross step 4 gained functional expression RP(TAbs) divided by step 5 gained functional expression Cm(TAbs), obtain detector cost performance factor RP/CmWith
Absorber thickness TAbsThe curve of variation,；
Step 6.2, according to detector cost performance factor RP/CmWith absorber thickness TAbsThe curve of variation, by RP/CmIt is maximized
When corresponding TAbsIt is determined as optimal absorption thickness degree.
8. far infrared according to claim 2 stops the optimization method of impurity band detector absorber thickness, feature exists
In structural model includes:
High conductive substrate；
Absorbed layer, barrier layer and electrode layer, absorbed layer, barrier layer and electrode layer are sequentially laminated in high conductive substrate；
Contact hole, contact hole perforation are arranged on absorbed layer, barrier layer, electrode layer；
Passivation layer, passivation layer deposition is in absorbed layer, barrier layer, electrode layer and high conductive substrate；
Electrode group, electrode group setting are connect in high conductive substrate and electrode layer, respectively with high conductive substrate and electrode layer.
9. far infrared according to claim 8 stops the optimization method of impurity band detector absorber thickness, feature exists
In electrode group includes positive electrode and negative electrode；Positive electrode is formed on electrode layer, forms negative electrode in high conductive substrate.
10. a kind of device, which is characterized in that device far infrared as described in claim 1 to 9 any one stops impurity band to be visited
The optimization method for surveying device absorber thickness is fabricated.
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