CN111191403A - Method for optimizing BIB detector response rate and BIB detector - Google Patents

Method for optimizing BIB detector response rate and BIB detector Download PDF

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CN111191403A
CN111191403A CN201911357959.XA CN201911357959A CN111191403A CN 111191403 A CN111191403 A CN 111191403A CN 201911357959 A CN201911357959 A CN 201911357959A CN 111191403 A CN111191403 A CN 111191403A
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detector
bib
working
bias voltage
layer
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CN111191403B (en
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王晓东
陈雨璐
王兵兵
张传胜
童武林
胡永山
张皓星
刘文辉
陈栋
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Shanghai Institute of Microwave Technology CETC 50 Research Institute
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Shanghai Institute of Microwave Technology CETC 50 Research Institute
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Abstract

The invention provides a method for optimizing BIB detector response rate and a BIB detector. The invention can extract the relation between the optimal working temperature and the working bias voltage aiming at the BIB detector obtained by different material systems and different process conditions, thereby obtaining the optimal working conditions including the working bias voltage and the corresponding optimal working temperature, and the working bias voltage and the working temperature of the detector are set according to the optimal working conditions, so that the response rate of the detector has the optimal value, thereby avoiding the repeated setting of the working conditions of the detector for optimizing the response rate, greatly shortening the debugging period of the detector and improving the debugging accuracy.

Description

Method for optimizing BIB detector response rate and BIB detector
Technical Field
The invention relates to the technology of semiconductor photoelectric detectors, in particular to a method for optimizing BIB detector response rate and a BIB detector.
Background
The Blocking Impurity Band (BIB) detector is a far infrared photodetector, and its development originated from intrinsic and extrinsic photoconductive detectors. The early intrinsic photoconductive detector has the working principle that valence band electrons absorb photon transition to a conduction band, so that the number of conduction band electrons and the number of valence band holes are increased, and the conductivity of the detector is increased; the extrinsic photoconductive detector developed later is based on the intrinsic photoconductive detector and utilizes doping to construct an impurity energy band between a conduction band and a valence band, electrons of the impurity energy band can directly transit to the conduction band by absorbing photons, thereby reducing the energy of the absorbed photons and extending the wavelength of response radiation, and besides, compared with the intrinsic photoconductive, the extrinsic photoconductive has another advantage that the absorption efficiency of incident radiation and the quantum efficiency of the detector are improved; however, the disadvantages of the extrinsic photoconductive detector remain evident, wherein the large dark current and its shot noise are two key issues that limit the further development of the extrinsic photoconductive detector, because the introduction of the impurity band forms a dark current conduction path, i.e. the impurity band conductance, between the conduction band and the valence band of the detector.
The BIB detector can well solve the bottleneck encountered by the extrinsic photoconductive detector, because the BIB detector is additionally provided with an intrinsic barrier layer on the basis of the structure of the extrinsic photoconductive detector, and the existence of the barrier layer can effectively inhibit the conduction of impurity bands, thereby greatly reducing the dark current and the shot noise of the detector. In addition, because the doping concentration of the BIB detector is generally higher than that of the extrinsic photoconductive detector, the structural size required by the BIB detector for absorbing the same amount of radiation is obviously smaller than that of the extrinsic photoconductive detector, and therefore the BIB detector has stronger radiation resistance and longer service life. The responsivity is defined as the magnitude of a current signal excited by unit target radiation energy as a key index for representing the performance of the BIB detector, and the numerical value of the responsivity directly represents the detection capability of the BIB detector. The working bias voltage and the working temperature of the detector are collectively called as the working conditions of the detector, the index of the response rate depends on the setting of the working conditions of the detector to a great extent, and in order to achieve the optimal response rate, the working conditions of the detector are preferentially set after being debugged for many times in the existing method.
Patent document No. CN107017315A discloses a blocking impurity band detector of a back electrode structure, comprising: a high conductivity silicon substrate; the silicon-doped phosphorus absorption layer is arranged on the high-conductivity silicon substrate; the high-purity silicon barrier layer is arranged on the silicon-doped phosphorus absorption layer; the electrode transition region is arranged on the high-purity silicon barrier layer; the positive electrode area is arranged on the electrode transition area, and a positive electrode lead is arranged on the positive electrode area; the negative electrode area is arranged at the bottom of the high-conductivity silicon substrate; the metal substrate, the negative electrode region is connected with the metal substrate through the conductive silver adhesive, and a negative electrode lead is arranged on the metal substrate. The invention has the following beneficial effects: the negative electrode and the metal substrate are bonded together by using the silver adhesive, gold wires are respectively led out from the positive electrode and the metal substrate through a lead bonding process and are respectively connected to adjacent pins of the metal substrate, the negative electrode is prevented from being etched by deep holes in the traditional preparation method, and the problem that the traditional etching process damages devices is solved. However, the patent does not investigate how to improve the detector responsivity of the blocking impurity band.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a method for optimizing the response rate of a BIB detector and the BIB detector.
According to one aspect of the present invention, there is provided a method of optimizing the responsivity of a BIB detector, comprising the steps of:
step 1: constructing a structural model of the impurity blocking zone BIB detector;
step 2: constructing a corresponding physical model according to the constructed structural model of the BIB detector;
and step 3: manufacturing a BIB material sample, extracting key physical parameters of the BIB material sample, inputting the extracted key physical parameters into a constructed physical model, and completing construction of a numerical model of the BIB detector;
and 4, step 4: the far infrared radiation is vertically irradiated on the detector from the front side, and the fixed temperature T which can enable the detector to normally work is selected according to the constructed numerical modelAAnd a fixed bias UAThe working temperature T is obtained by numerical simulationO＝TAAnd a working bias voltage UO＝UAThe spectral responsivity curve of the time detector is the curve of the responsivity R of the time detector changing along with the incident wavelength lambda;
and 5: constant bias U at different valuesALower, respectively changing the operating temperature TOTo obtain different fixed bias voltages UALower, different working temperature TOCorresponding to a series of curves of spectral responsivity of the detector, and extracting the peak wavelength lambda of the detectorPCorresponding peak response rate RPDependent on the operating temperature TOA series of curves that vary;
step 6: working bias voltage U obtained according to step 5OEqual to different fixed bias voltages UAValue of, λPCorresponding peak response rate RPDependent on the operating temperature TOExtracting optimal working temperature T of the detector by a series of curvesOptBias voltage U with operationOObtaining the optimal working temperature T of the fitting detector by the changed curveOptBias voltage U with operationOFunction T of the curve of variationOpt(UO) Wherein the detector has an optimum operating temperature TOptIs the peak value responsivity R of the detectorPWorking temperature T corresponding to optimal valueO；
And 7: the optimal working temperature T of the detector obtained according to the step 6OptWith respect to different operating biases UOAnd the set working bias voltage UODetermining an optimum operating condition for optimizing the detector response rate, wherein the optimum operating condition is determined by the operating bias UOAnd corresponding optimum operating temperature TOptAnd (4) forming.
And 8: sequentially growing an absorption layer and a barrier layer on the high-conductivity substrate by adopting the same material system and process conditions as the BIB material sample in the step 3, and then completing the preparation of the BIB detector by adopting a micro-nano process;
and step 9: and (3) placing the prepared BIB detector in a cryostat through a packaging process, and then setting the working bias voltage and the working temperature of the BIB detector according to the optimal working condition determined in the step (9) through the electrical interface and the thermal interface of the cryostat respectively, so that the response rate of the prepared BIB detector has an optimal value.
Preferably, the step 1 comprises the steps of:
step 1.1: sequentially forming an absorption layer, a barrier layer, an electrode layer and a passivation layer on a high-conductivity substrate;
step 1.2: a positive electrode is formed on the electrode layer, and a negative electrode is formed on the high-conductivity substrate.
Preferably, the step 2 includes: the method comprises the steps of establishing a simultaneous Poisson equation, an electron-hole continuity equation, an electron-hole current density equation, adding a carrier recombination rate and a photogenerated carrier generation rate into the continuity equation through a generated recombination term, wherein the carrier recombination term comprises SRH recombination, radiative recombination and Auger recombination, describing the carrier generation rate through a coupling absorption coefficient model by the photogenerated carrier generation term, considering the low-temperature freezeout effect, the barrier tunneling effect and the speed saturation effect of the carriers, and discretizing simultaneous iterative solution by a finite element method.
Preferably, the step 3 comprises: growing a heavily doped absorption layer and an intrinsic barrier layer on a high-conductivity substrate in sequence to serve as a BIB material sample, and measuring and extracting key physical parameters of the BIB material sample, wherein the measured key physical parameters comprise: the carrier mobility and the lifetime of the sample, the doping concentration and the thickness of the substrate, the doping concentration and the thickness of the absorption layer and the doping concentration and the thickness of the barrier layer.
Preferably, the step 5 comprises the steps of:
step 5.1: varying the operating temperature TOThe working bias voltage U is obtained by numerical simulationO＝UAAnd (3) extracting a series of curves of the spectral responsivity of the detector corresponding to different working temperatures, and extracting the peak wavelength lambda of the detectorP；
Step 5.2: current working bias voltage U obtained according to step 5.1O＝UAAt different working temperatures TOExtracting the working bias voltage U according to a series of curves of the spectral responsivity of the corresponding detectorO＝UAWhen is lambdaPCorresponding peak response rate RPDependent on the operating temperature TOA profile of change;
step 5.3: varying the fixed bias UAThe value of (D) is different from the value of (D) to fix the bias voltage UAAnd repeating the steps 5.1 and 5.2 to obtain the working bias voltage UOEqual to different fixed bias voltages UAWhen the value is positive, a series of curves of the spectral responsivity of the detector corresponding to different working temperatures are obtained; and extracting the working bias voltage U from the series of curvesOEqual to different bias voltages UAValue of, λPCorresponding peak response rate RPDependent on the operating temperature TOA series of curves of change.
Preferably, the micro-nano process flow in the step 8 includes: photoetching mark manufacturing, electronic collection layer manufacturing, photosensitive table top manufacturing, ohmic electrode manufacturing, passivation layer manufacturing, electrode hole manufacturing and thickened electrode manufacturing.
Preferably, the method for preparing the BIB detector by adopting the micro-nano process specifically comprises the following steps:
step A1: growing a heavily doped N-type absorption layer and an intrinsic barrier layer on the substrate in sequence by adopting the same material system and process conditions as the BIB material sample in the step 3;
step A2: obtaining a mark area window on the barrier layer through a photoetching process, depositing Ti/Au double-layer metal by adopting an electron beam evaporation process, and then completing photoetching mark manufacture after acetone stripping;
step A3: obtaining a window required by ion injection on the barrier layer through a photoetching process, injecting tellurium ions into the window area, and then completing the manufacture of the electron collection layer after a rapid thermal annealing process;
step A4: obtaining a window required by etching on the electron collecting layer through a photoetching process, and then longitudinally etching by adopting an inductively coupled plasma etching process to remove the electron collecting layer, the barrier layer and the absorption layer in the window area to finish the manufacture of the photosensitive table top;
step A5: obtaining windows of a positive electrode area and a negative electrode area by utilizing a photoetching process, depositing three layers of Ni/Ge/Au metal by adopting an electron beam evaporation process, and then completing the manufacture of an ohmic electrode after acetone stripping and annealing processes;
step A6: adopting a plasma enhanced chemical vapor deposition process to grow silicon nitride to finish the manufacture of the passivation layer;
step A7: forming a window required for corrosion in an ohmic electrode area by utilizing a photoetching process, and then corroding silicon nitride in the electrode area by using a hydrofluoric acid buffer solution to complete the manufacture of an electrode hole;
step A8: and (3) obtaining the window of the ohmic electrode area again by utilizing a photoetching process, depositing Ni/Au double-layer metal by adopting an electron beam evaporation process, and then stripping by acetone to finish the manufacture of the thickened electrode.
Preferably, the flow of the packaging process in the step 9 includes: a detector scribe, a detector patch, and a detector lead.
According to another aspect of the present invention, a BIB detector is provided, which optimizes the response rate of the BIB detector using the method for optimizing the response rate of the BIB detector.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the method for optimizing the response rate of the impurity-blocking band detector, firstly, a function expression of the optimal working temperature of the detector about different working bias voltages is obtained through numerical simulation and data fitting, then the corresponding optimal working temperature is extracted according to the function expression and the set working bias voltages, and the response rate of the manufactured impurity-blocking band detector can be optimized under the set working bias voltages by the working temperature, so that a reliable basis is provided for designing and manufacturing the high-performance impurity-blocking band detector.
2. The method for optimizing the response rate of the impurity band blocking detector can extract the relation between the optimal working temperature and the working bias voltage aiming at the impurity band blocking detector obtained by different material systems (comprising silicon-based, germanium-based and gallium arsenide-based) and different process conditions (comprising a gas phase epitaxy process, a liquid phase epitaxy process and a molecular beam epitaxy process), thereby obtaining the optimal working condition comprising the working bias voltage and the corresponding optimal working temperature, and setting the working bias voltage and the working temperature of the detector according to the optimal working condition, so that the response rate of the detector has the optimal value, thereby avoiding the repeated setting of the working condition of the detector for optimizing the response rate, greatly shortening the debugging period of the detector and improving the debugging accuracy.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
fig. 1 is a schematic structural diagram of a blocking impurity band detector according to the present invention.
FIG. 2 shows the operating bias UOA series of curves for the spectral responsivity of the detector for different operating temperatures at 0.82V.
FIG. 3 shows the operating bias UOA series of curves of detector spectral responsivity at different operating temperatures at 0.85V.
FIG. 4 shows the operating bias UOA series of curves for the spectral responsivity of the detector for different operating temperatures at 0.88V.
FIG. 5 shows the operating bias UOA series of curves of detector spectral responsivity at different operating temperatures at 0.91V.
Fig. 6 is a series of curves of peak responsivity as a function of operating temperature for different operating biases.
Fig. 7 is a fitted curve of optimum operating temperature as a function of operating bias.
The figures show that:
1-highly conductive substrate 5-passivation layer
2-absorbing layer 6-positive electrode
3-barrier layer 7-negative electrode
4-electrode layer
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that it would be obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit of the invention. All falling within the scope of the present invention.
In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.
The method for optimizing the response rate of the impurity band blocking detector starts with the performance of the BIB detector, inspects the influence of the working condition of the detector on the response index of the detector, and the obtained result has certain guiding significance on the optimization design of the detector. Firstly, a function formula of the optimal working temperature of the detector about different working bias voltages is obtained through numerical simulation and data fitting, then the corresponding optimal working temperature is extracted according to the function formula and the set working bias voltages, and the response rate of the manufactured impurity band blocking detector can be optimal under the set working bias temperatures. The method has the advantages that the relation between the optimal working temperature and the working bias voltage can be extracted from the impurity band blocking detector obtained by aiming at different material systems and different process conditions, so that the optimal working conditions including the working bias voltage and the corresponding optimal working temperature are obtained, the working bias voltage and the working temperature of the detector are set according to the optimal working conditions, the response rate of the detector has the optimal value, the repeated setting of the working conditions of the detector for optimizing the response rate is avoided, the debugging period of the detector is greatly shortened, and the debugging accuracy is improved.
The method for optimizing the BIB detector response rate comprises the following steps:
step 1: constructing a structural model of the impurity blocking zone BIB detector;
step 1.1: sequentially forming an absorption layer, a barrier layer, an electrode layer and a passivation layer on a high-conductivity substrate;
step 1.2: forming a positive electrode on the electrode layer, and forming a negative electrode on the high-conductivity substrate;
preferably, as shown in fig. 1, a heavily doped N-type absorption layer, an intrinsic barrier layer, a heavily doped N-type electrode layer and a silicon nitride passivation layer are sequentially formed on an N-type high conductivity gallium arsenide substrate, and then a positive electrode is formed on the heavily doped N-type electrode layer and a negative electrode is formed on the N-type high conductivity gallium arsenide substrate;
step 2: constructing a corresponding physical model according to the constructed structural model of the BIB detector; specifically, a simultaneous Poisson equation, an equation of continuity of electrons and holes, an equation of current density of electrons and holes, and adding a carrier recombination rate and a photogenerated carrier generation rate into the equation of continuity through generating a recombination term, wherein the carrier recombination term comprises SRH recombination, radiative recombination and Auger recombination, the photogenerated carrier generation term describes the generation rate of carriers through a coupling absorption coefficient model, and besides, a low-temperature freezeout effect, a potential barrier tunneling effect and a speed saturation effect of the carriers need to be considered, and discretizing simultaneous iterative solution is carried out by a finite element method;
and step 3: manufacturing a BIB material sample, extracting key physical parameters of the BIB material sample, inputting the extracted key physical parameters into a constructed physical model, and completing construction of a numerical model of the BIB detector; specifically, a heavily doped absorption layer and an intrinsic barrier layer are sequentially grown on a high-conductivity substrate to serve as a BIB material sample, and key physical parameters of the BIB material sample are measured and extracted, wherein the measured key physical parameters comprise: the carrier mobility and the service life of the sample, the doping concentration and the thickness of the substrate, the doping concentration and the thickness of the absorption layer and the doping concentration and the thickness of the barrier layer;
preferably, a heavily doped N-type absorption layer and an intrinsic barrier layer are sequentially grown on an N-type high-conductivity gallium arsenide substrate, and then the electron mobility mu is obtained by adopting a low-temperature Hall test methode＝6.71×105cm2Vs, hole mobility μh＝3.86×106cm2Vs, electron lifetime τe＝1×10-9s, hole lifetime τh＝1×10-9s, obtaining substrate doping concentration N by adopting an extended resistance analysis methodS＝4×1018cm-3Thickness of substrate h S350 μm, absorption layer doping concentration NA＝5×1015cm-3Thickness h of the absorption layer A40 μm, barrier doping concentration NB＝1×1013cm-3Thickness h of the barrier layerB＝8μm；
And 4, step 4: the far infrared radiation is vertically irradiated on the detector from the front side, and the fixed temperature T which can enable the detector to normally work is selected according to the constructed numerical modelAAnd a fixed bias UAThe working temperature T is obtained by numerical simulationO＝TAAnd a working bias voltage UO＝UAThe spectral responsivity curve of the time detector is the curve of the responsivity R of the time detector changing along with the incident wavelength lambda;
and 5: constant bias U at different valuesALower, respectively changing the operating temperature TOTo obtain different fixed bias voltages UALower, different working temperature TOCorresponding to a series of curves of spectral responsivity of the detector, and extracting the peak wavelength lambda of the detectorPCorresponding peak response rate RPDependent on the operating temperature TOA series of curves that vary;
step 5.1: varying the operating temperature TOThe working bias voltage U is obtained by numerical simulationO＝UAAnd (3) extracting a series of curves of the spectral responsivity of the detector corresponding to different working temperatures, and extracting the peak wavelength lambda of the detectorP；
Step 5.2: current working bias voltage U obtained according to step 5.1O＝UAAt different working temperatures TOExtracting the working bias voltage U according to a series of curves of the spectral responsivity of the corresponding detectorO＝UAWhen is lambdaPCorresponding peak response rate RPDependent on the operating temperature TOA profile of change;
step 5.3: varying the fixed bias UAThe value of (D) is different from the value of (D) to fix the bias voltage UAAnd repeating the steps 5.1 and 5.2 to obtain the working bias voltage UOEqual to different fixed bias voltages UAWhen the value is positive, a series of curves of the spectral responsivity of the detector corresponding to different working temperatures are obtained; and extracting the working bias voltage U from the series of curvesOEqual to different bias voltages UAValue of, λPCorresponding peak response rate RPDependent on the operating temperature TOA series of curves that vary;
preferably, a fixed temperature T is selected that enables the detector to operate properlyA6.2K and a fixed bias UA0.82V, obtained by numerical simulationO＝TA6.2K and operating bias UO＝UAThe spectral responsivity curve of the detector at 0.82V, as shown by the curve identified by the black diamond symbols in fig. 2; varying the operating temperature TOThe working bias voltage U is obtained by numerical simulationO＝UAAt 0.82V, different working temperature TOA series of corresponding curves of the spectral responsivity of the detector are extracted to obtain the peak wavelength lambda of the detectorP263 μm; according to the working bias voltage U as shown in FIG. 2O＝UAWhen the voltage is equal to 0.82V, extracting a series of curves of the spectral responsivity of the detector corresponding to different working temperatures to obtain the current working bias voltage UO＝UAPeak response rate R at 0.82VPDependent on the operating temperature TOThe curves of variation, as shown by the curves identified by the black square symbols in FIG. 6; change the fixed bias voltage to be UA＝0.85V、UA0.88V and UA0.91V, respectively, to obtain the current operating bias UO＝UA0.85V, 0.88V and 0.91V, different working temperatures TOA series of curves corresponding to the spectral responsivity of the detector, as shown in FIGS. 3-5, are extracted as the operating bias voltage UO＝UAλ is 0.85V, 0.88V and 0.91VPCorresponding peak response rate RPDependent on the operating temperature TOA series of curves of variation, as shown in fig. 6;
step 6: working bias voltage U obtained according to step 5OEqual to different fixed bias voltages UAValue of, λPCorresponding peak response rate RPDependent on the operating temperature TOExtracting optimal working temperature T of the detector by a series of curvesOptBias voltage U with operationOObtaining the optimal working temperature T of the fitting detector by the changed curveOptBias voltage U with operationOFunction T of the curve of variationOpt(UO) Wherein the detector has an optimum operating temperature TOptIs the peak value responsivity R of the detectorPWorking temperature T corresponding to optimal valueO；
Preferably, the bias voltage U is different according to the operation as shown in FIG. 6OLower peak response rate RPDependent on the operating temperature TOExtracting optimal working temperature T of the detector by a series of curvesOptBias voltage U with operationOThe curve of the change, as shown in FIG. 7, is the optimum operating temperature TOptAnd the working bias voltage UOHaving a linear relationship by fitting the optimum operating temperature T of the detectorOptBias voltage U with operationOObtaining the optimal working temperature T of the detector by the changed curveOptWith respect to different operating biases UOBy function of (A) TOpt(UO)：
TOpt＝9.42851UO-2.19227；
And 7: the optimal working temperature T of the detector obtained according to the step 6OptWith respect to different operating biases UOAnd the set working bias voltage UODetermining an optimum operating condition for optimizing the detector response rate, wherein the optimum operating condition is determined by the operating bias UOAnd corresponding optimum operating temperature TOptComposition is carried out;
preferably according to the functional formula TOpt(UO) And a set working bias UOExtracting corresponding optimum working temperature T as 1VOpt6.5K, and then determining the optimal operating conditions (U) that optimize the detector response rateO＝1V，TOpt＝6.5K)；
And 8: sequentially growing an absorption layer and a barrier layer on the high-conductivity substrate by adopting the same material system and process conditions as the BIB material sample in the step 3, and then completing the preparation of the BIB detector by adopting a micro-nano process; the micro-nano process flow comprises the following steps: photoetching mark manufacturing, electronic collection layer manufacturing, photosensitive table top manufacturing, ohmic electrode manufacturing, passivation layer manufacturing, electrode hole manufacturing and thickened electrode manufacturing;
preferably, the method for preparing the BIB detector by adopting the micro-nano process specifically comprises the following steps:
step A1: adopting the same material system and process conditions as the BIB material sample in the step S3 to sequentially grow a heavily doped N-type absorption layer with the thickness of 40 microns and an intrinsic barrier layer with the thickness of 8 microns on an N-type high-conductivity gallium arsenide substrate with the thickness of 350 microns, wherein the doping concentrations of the substrate, the absorption layer and the barrier layer are respectively 4 multiplied by 1018cm-3、5×1015cm-3And 1X 1013cm-3；
Step A2: obtaining a mark area window on the barrier layer through a photoetching process, depositing Ti/Au double-layer metal by adopting an electron beam evaporation process, and then completing photoetching mark manufacture after acetone stripping;
step A3: obtaining a window required by ion injection on the barrier layer through a photoetching process, injecting tellurium ions into the window area, and then completing the manufacture of the electron collection layer after a rapid thermal annealing process;
step A4: obtaining a window required by etching on the electron collecting layer through a photoetching process, and then longitudinally etching by 50 microns by adopting an inductively coupled plasma etching process to remove the electron collecting layer, the barrier layer and the absorption layer in the window area to finish the manufacture of the photosensitive table-board;
step A5: obtaining windows of a positive electrode area and a negative electrode area by utilizing a photoetching process, depositing three layers of Ni/Ge/Au metal by adopting an electron beam evaporation process, and then completing the manufacture of an ohmic electrode after acetone stripping and annealing processes;
step A6: adopting a plasma enhanced chemical vapor deposition process to grow silicon nitride with the thickness of 500nm to finish the manufacture of a passivation layer;
step A7: forming a window required for corrosion in an ohmic electrode area by utilizing a photoetching process, and then corroding silicon nitride in the electrode area by using a hydrofluoric acid buffer solution to complete the manufacture of an electrode hole;
step A8: and (3) obtaining the window of the ohmic electrode area again by utilizing a photoetching process, depositing Ni/Au double-layer metal by adopting an electron beam evaporation process, and then stripping by acetone to finish the manufacture of the thickened electrode. Finishing the manufacture of the GaAs-based BIB detector;
and step 9: placing the prepared BIB detector in a cryostat through a packaging process, and then setting the working bias voltage and the working temperature of the BIB detector according to the optimal working condition determined in the step 9 through the electrical interface and the thermal interface of the cryostat respectively, so that the response rate of the prepared BIB detector has an optimal value;
preferably, the prepared gallium arsenide-based BIB detector is placed in a cryostat through packaging process flows of a detector scribing sheet, a detector paster, a detector lead wire and the like, and then the working bias voltage and the working temperature of the gallium arsenide-based BIB detector are respectively set to be (U) through an electrical interface and a thermal interface of the cryostatO＝1V，TOpt6.5K), the responsivity of the fabricated gaas-based BIB detector will have the optimum value.
According to the BIB detector provided by the invention, as shown in fig. 1, the method for optimizing the responsivity of the BIB detector is adopted to optimize the responsivity of the BIB detector, and the responsivity of the BIB detector has an optimal value.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.

Claims (9)

1. A method of optimizing the responsivity of a BIB probe comprising the steps of:
step 1: constructing a structural model of the impurity blocking zone BIB detector;
step 2: constructing a corresponding physical model according to the constructed structural model of the BIB detector;
and step 3: manufacturing a BIB material sample, extracting key physical parameters of the BIB material sample, inputting the extracted key physical parameters into a constructed physical model, and completing construction of a numerical model of the BIB detector;
and 4, step 4: the far infrared radiation is vertically irradiated on the detector from the front side, and the fixed temperature T which can enable the detector to normally work is selected according to the constructed numerical modelAAnd a fixed bias UAThe working temperature T is obtained by numerical simulationO＝TAAnd a working bias voltage UO＝UAThe spectral responsivity curve of the time detector is the curve of the responsivity R of the time detector changing along with the incident wavelength lambda;
and 5: constant bias U at different valuesALower, respectively changing the operating temperature TOTo obtain different fixed bias voltages UALower, different working temperature TOCorresponding to a series of curves of spectral responsivity of the detector, and extracting the peak wavelength lambda of the detectorPCorresponding peak response rate RPDependent on the operating temperature TOA series of curves that vary;
step 6: working bias voltage U obtained according to step 5OEqual to different fixed bias voltages UAValue of, λPCorresponding peak response rate RPDependent on the operating temperature TOExtracting optimal working temperature T of the detector by a series of curvesOptBias voltage U with operationOObtaining the optimal working temperature T of the fitting detector by the changed curveOptBias voltage U with operationOFunction T of the curve of variationOpt(UO) Wherein the detector has an optimum operating temperature TOptIs the peak value responsivity R of the detectorPWorking temperature T corresponding to optimal valueO；
And 7: the optimal working temperature T of the detector obtained according to the step 6OptWith respect to different operating biases UOAnd the set working bias voltage UODetermining an optimum operating condition for optimizing the detector response rate, wherein the optimum operating condition is determined by the operating bias UOAnd corresponding optimum operating temperature TOptAnd (4) forming.
And 8: sequentially growing an absorption layer and a barrier layer on the high-conductivity substrate by adopting the same material system and process conditions as the BIB material sample in the step 3, and then completing the preparation of the BIB detector by adopting a micro-nano process;
and step 9: and (3) placing the prepared BIB detector in a cryostat through a packaging process, and then setting the working bias voltage and the working temperature of the BIB detector according to the optimal working condition determined in the step (9) through the electrical interface and the thermal interface of the cryostat respectively, so that the response rate of the prepared BIB detector has an optimal value.
2. The method for optimizing BIB detector responsivity of claim 1 wherein step 1 comprises the steps of:
step 1.1: sequentially forming an absorption layer, a barrier layer, an electrode layer and a passivation layer on a high-conductivity substrate;
step 1.2: a positive electrode is formed on the electrode layer, and a negative electrode is formed on the high-conductivity substrate.
3. The method of optimizing BIB probe responsivity of claim 1 wherein step 2 comprises: the method comprises the steps of establishing a simultaneous Poisson equation, an electron-hole continuity equation, an electron-hole current density equation, adding a carrier recombination rate and a photogenerated carrier generation rate into the continuity equation through a generated recombination term, wherein the carrier recombination term comprises SRH recombination, radiative recombination and Auger recombination, describing the carrier generation rate through a coupling absorption coefficient model by the photogenerated carrier generation term, considering the low-temperature freezeout effect, the barrier tunneling effect and the speed saturation effect of the carriers, and discretizing simultaneous iterative solution by a finite element method.
4. The method of optimizing BIB probe responsivity of claim 1 wherein step 3 comprises: growing a heavily doped absorption layer and an intrinsic barrier layer on a high-conductivity substrate in sequence to serve as a BIB material sample, and measuring and extracting key physical parameters of the BIB material sample, wherein the measured key physical parameters comprise: the carrier mobility and the lifetime of the sample, the doping concentration and the thickness of the substrate, the doping concentration and the thickness of the absorption layer and the doping concentration and the thickness of the barrier layer.
5. The method for optimizing BIB detector responsivity of claim 1 wherein said step 5 comprises the steps of:
step 5.1: varying the operating temperature TOThe working bias voltage U is obtained by numerical simulationO＝UAAnd (3) extracting a series of curves of the spectral responsivity of the detector corresponding to different working temperatures, and extracting the peak wavelength lambda of the detectorP；
Step 5.2: current working bias voltage U obtained according to step 5.1O＝UAAt different working temperatures TOExtracting the working bias voltage U according to a series of curves of the spectral responsivity of the corresponding detectorO＝UAWhen is lambdaPCorresponding peak response rate RPDependent on the operating temperature TOA profile of change;
step 5.3: varying the fixed bias UAThe value of (D) is different from the value of (D) to fix the bias voltage UAAnd repeating the steps 5.1 and 5.2 to obtain the working bias voltage UOEqual to different fixed bias voltages UAWhen the value is positive, a series of curves of the spectral responsivity of the detector corresponding to different working temperatures are obtained; and extracting the working bias voltage U from the series of curvesOEqual to different bias voltages UAValue of, λPCorresponding peak response rate RPDependent on the operating temperature TOA series of curves of change.
6. The method for optimizing BIB detector responsivity according to claim 1, wherein the micro-nano process flow in the step 8 comprises: photoetching mark manufacturing, electronic collection layer manufacturing, photosensitive table top manufacturing, ohmic electrode manufacturing, passivation layer manufacturing, electrode hole manufacturing and thickened electrode manufacturing.
7. The method for optimizing the BIB detector response rate according to claim 1, wherein the method for preparing the BIB detector by adopting a micro-nano process specifically comprises the following steps:
step A1: growing a heavily doped N-type absorption layer and an intrinsic barrier layer on the substrate in sequence by adopting the same material system and process conditions as the BIB material sample in the step 3;
step A2: obtaining a mark area window on the barrier layer through a photoetching process, depositing Ti/Au double-layer metal by adopting an electron beam evaporation process, and then completing photoetching mark manufacture after acetone stripping;
step A3: obtaining a window required by ion injection on the barrier layer through a photoetching process, injecting tellurium ions into the window area, and then completing the manufacture of the electron collection layer after a rapid thermal annealing process;
step A4: obtaining a window required by etching on the electron collecting layer through a photoetching process, and then longitudinally etching by adopting an inductively coupled plasma etching process to remove the electron collecting layer, the barrier layer and the absorption layer in the window area to finish the manufacture of the photosensitive table top;
step A5: obtaining windows of a positive electrode area and a negative electrode area by utilizing a photoetching process, depositing three layers of Ni/Ge/Au metal by adopting an electron beam evaporation process, and then completing the manufacture of an ohmic electrode after acetone stripping and annealing processes;
step A6: adopting a plasma enhanced chemical vapor deposition process to grow silicon nitride to finish the manufacture of the passivation layer;
step A7: forming a window required for corrosion in an ohmic electrode area by utilizing a photoetching process, and then corroding silicon nitride in the electrode area by using a hydrofluoric acid buffer solution to complete the manufacture of an electrode hole;
step A8: and (3) obtaining the window of the ohmic electrode area again by utilizing a photoetching process, depositing Ni/Au double-layer metal by adopting an electron beam evaporation process, and then stripping by acetone to finish the manufacture of the thickened electrode.
8. The method for optimizing BIB detector responsivity of claim 1 wherein the flow of the packaging process in step 9 comprises: a detector scribe, a detector patch, and a detector lead.
9. A BIB detector, characterized in that the method of optimizing the response rate of a BIB detector according to any of claims 1-8 is used to optimize the response rate of a BIB detector.
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