CN104979420B - A kind of quantum dot field-effect single-photon detector based on microcavity - Google Patents
A kind of quantum dot field-effect single-photon detector based on microcavity Download PDFInfo
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Abstract
The present invention relates to a kind of quantum dot field-effect single-photon detector based on microcavity, its structure includes substrate, cushion, lower speculum multilayer film, barrier layer, doped layer, separation layer, absorbed layer, quantum dot layer, contact layer and electrode.It is characterized in that, detector uses δ doping techniques, a two-dimensional electron gas structure is formed in absorbed layer and separation layer interface, and it is used as conductive channel, grid applies back bias voltage when device works, absorbed after photon incidence in absorbed layer, produce electron hole pair, captured by quantum dot in hole, electronics enters conductive channel, single photon detection is realized to the regulating and controlling effect of conductive channel using quantum dot trapped hole, simultaneously upper reflector is used as by the use of air/semiconductor interface, a micro-cavity structure is formed between lower speculum, incident photon is set to obtain resonant check after entering intracavitary, it can greatly improve the light absorpting ability and photoresponse ability of detector.Panel detector structure involved in the present invention is simple, volume very little, has the characteristics of low dark count rate, high-gain and high sensitivity, is easy to integrate with other opto-electronic devices.
Description
Technical field
The invention belongs to semiconductor photoelectronic device field, more particularly to a kind of base that atomic low light signals are detected
In the quantum dot field-effect single-photon detector of microcavity.
Background technology
As a kind of atomic low light signals Detection Techniques, high efficiency single photon detection is due to its huge theory value and war
Slightly Research Significance has become most one of popular domain of international research in recent years.Single-photon detecting survey technology be not only contemporary optics,
Information science, quantum communications, accurate photoelectric measurement, hypersensitivity detection etc. forward position degree field there is an urgent need to the technology
Fast development also bring the breakthrough of seriation new principle, new ideas and new device simultaneously, formed brand-new
Branch of section --- single photon detection and manipulation physics, and constantly promote molectronics, surface plasma laser optics,
The development of the new branch of science such as infrared photon and related high-technology field.
By development for many years, existing a variety of ripe types of single-photon detector at present, wherein with photomultiplier and
Avalanche diode is Typical Representative, and these detectors just support the scientific research of forefront from occur always, and
Various fields are widely used.However, in the last few years with the continuous progress of information technology, the detection spirit to optical signal
Sensitivity requires more and more higher.Quantum information technology rapid development particularly including quantum key distribution, quantum calculation etc.,
Extremely harsh performance requirement is proposed to single-photon detector, such as number of photons resolution ratio, counting rate and detection efficient are all remote
Far beyond existing device performance.Therefore, the exploration and research of high-performance novel single-photon detector, has become single photon
Detection Techniques develop key issue urgently to be resolved hurrily.
The content of the invention
In view of the above-mentioned problems, the present invention proposes a kind of quantum dot field-effect single-photon detector based on microcavity, device junction
Structure is simple, volume very little, is easy to be integrated with other opto-electronic devices.Its technical scheme is：Detector is using δ doping skills
Art, a two-dimensional electron gas structure is formed in absorbed layer and separation layer interface, and be used as conductive channel, grid when device works
Apply back bias voltage, absorbed after photon incidence in absorbed layer, produce electron hole pair, hole is captured by quantum dot, and electronics enters
Conductive channel, single photon detection is realized to the regulating and controlling effect of conductive channel using quantum dot trapped hole；Simultaneously using air/
Interface makes incident photon enter after intracavitary as a micro-cavity structure is formed between upper reflector, with lower speculum
Resonant check is obtained, so as to increase substantially the light absorpting ability of detector and photoresponse ability.
To achieve the above object, the invention provides a kind of quantum dot field-effect single-photon detector knot based on microcavity
Structure, it is characterised in that including：
(1) substrate, the substrate is GaAs substrates, for entering the epitaxial growth of row detector layers of material thereon；
(2) cushion, the cushion are GaAs materials, are grown on substrate；
(3) speculum multilayer film under, the lower speculum multilayer film are AlAs/Al0.15Ga0.85As materials, are grown on cushion
On；
(4) barrier layer, the barrier layer are Al0.26Ga0.74As materials, it is grown on lower speculum multilayer film；
(5) delta doping layer, the doped layer are adulterated for Si- δ, are grown on barrier layer；
(6) separation layer, the separation layer are Al0.26Ga0.74As materials, are grown on doped layer；
(7) absorbed layer, the absorbed layer are GaAs materials, are grown on separation layer；
(8) quantum dot layer, the quantum dot layer are InAs quantum dots, are grown on absorbed layer；
(9) contact layer, contact layer GaAs materials, is grown on quantum dot layer；
(10) source electrode, drain electrode and gate electrode, by the way that deposit forms on the contact layer after photoetching corrosion.
The features of the present invention and effect are as follows：
1.Quantum dot field-effect single-photon detector of the present invention based on microcavity is using second order photoconduction machine
System, its gain is derived from current-carrying electron conductivity and the sensitiveness of photo-generated carrier is fettered to quantum dot, thus has high photoelectricity
Lead gain and photon resolution capability.
2.Quantum dot field-effect single-photon detector of the present invention based on microcavity is used as conduction using two-dimensional electron gas
Passage, wherein two-dimensional electron gas be formed by be δ doping GaAs/Al0.26Ga0.74As heterojunction structures, i.e. GaAs layers are not mixed
It is miscellaneous, the Al of broad-band gap0.26Ga0.74As material layers side is provided with a delta doping layer, and the two-dimensional electron gas of delta doping layer and GaAs layers leads to
Cross space separation layer to separate, so as to avoid influence of the ionized impurity to two-dimensional electron gas, make in conductive channel with very high
Electron mobility.
3.Quantum dot field-effect single-photon detector of the present invention based on microcavity employs one kind without upper reflector
Micro-cavity structure design, actually make use of air/semiconductor interface as microcavity upper reflector, while speculum under microcavity
It is placed between cushion and separation layer, so as to avoid influence of the series resistance of microcavity speculum to detector photoelectric respone.
Due to the effect of microcavity, incident photon is obtained resonant check after entering intracavitary, detector can greatly be improved
Light absorpting ability and photoresponse ability；On the other hand due to the wavelength selectivity of microcavity, outside noise can be greatly reduced
Interference, reduce the dark count rate of detector.
Brief description of the drawings
Quantum dot field-effect single-photon detector structures of the Fig. 1 based on microcavity
Fig. 2 quantum dot field-effect single photon detection mechanism schematic diagrames
Embodiment
It is as follows to the detailed description of the invention with reference to accompanying drawing：
Quantum dot field-effect single-photon detector structure based on microcavity as shown in figure 1, substrate (1), cushion (2), under
Speculum multilayer film (3), barrier layer (4), doped layer (5), separation layer (6), absorbed layer (7), quantum dot layer (8), contact layer
(9), drain electrode (10), gate electrode (11), source electrode (12), GaAs contact layers/air contact surfaces (13).Wherein, substrate (1) is
GaAs substrates, for entering the epitaxial growth of row detector layers of material thereon；Cushion (2) is GaAs materials, is grown on lining
On bottom (1), effect is to form high quality epitaxial surface, to reduce stress of the substrate (1) between epitaxial layer；Lower speculum multilayer
Film (3) is the AlAs/Al of alternate cycle growth0.15Ga0.85As materials, it is grown on cushion (2), multilayer film logarithm is more, under
The reflectivity of speculum is higher, and the light absorbs humidification of detector microcavity is more obvious；Barrier layer (4) is Al0.26Ga0.74As materials
Material, is grown on lower speculum multilayer film (3)；Doped layer (5) adulterates for Si- δ, is grown on barrier layer (4), effect is to lead
Electric channel provides free electron；Separation layer (6) is Al0.26Ga0.74As materials, it is grown on doped layer (5), effect is to detection
The conductive channel and doped layer (5) of device carry out space isolation, reduce influence of doped layer (5) impurity to conductive channel；Absorbed layer
(7) it is GaAs materials, is grown on separation layer (6), effect is that incident light is absorbed, and produces electron-hole pair；Quantum
Point layer (8) is InAs quantum dots, is grown on absorbed layer (7), and effect is to capture and fetter photohole；Contact layer (9) GaAs
Material, it is grown on quantum dot layer (8), effect contributes to form good Ohmic contact；Drain electrode (10), gate electrode
(11), source electrode (12) is that effect is provided for detector by being formed to being deposited after device photoetching corrosion on contact layer (9)
Required operating voltage.
Quantum dot field-effect single photon detection mechanism is as shown in Fig. 2 gate electrode (11) applies back bias voltage when detector works
(15) after, photon (16) is incident, is absorbed in absorbed layer (7) and produce light induced electron (17) and photohole (18).In grid electricity
Under pole (11) back bias voltage (2) effect, light induced electron (17) enters two-dimensional electron gas conductive channel (19) and participates in conduction, simultaneously because
Quantum dot confinement effect, photohole (18) are captured by quantum dot layer (8).Inside detector, quantum dot constraint photohole
(18) equivalent to the particle of positively charged after, so as to weaken the intensity of additional grid electric field, the increasing of conductive channel (19) conductance is caused
Add.Therefore, whenever a photohole (18) is captured, the decrease of electric-field intensity is will result in, substantial amounts of electronics (20) is existed
Drain electrode (13) is transported to from source electrode (12) under source-drain voltage, until the hole in quantum dot valence band is answered by the electronics in conduction band
Conjunction is fallen.A large amount of electronics (20) in photohole (18) life time, which transport, is formed current break, so as in source electrode
(12) a photoelectric current pulse is produced between drain electrode (10), single photon can be achieved by detecting each photoelectric current pulse
Detection.
Claims (13)
1. a kind of quantum dot field-effect single-photon detector based on microcavity, it is characterised in that detector is using second order photoconduction
Mechanism, its gain are derived from the sensitiveness that current-carrying electron conductivity fetters photo-generated carrier to quantum dot, are increased using the resonance of microcavity
Epistasis improves the light absorpting ability and photoresponse ability of detector；
Its structure includes：
Substrate (1), the substrate (1) are used for the epitaxial growth for entering row detector layers of material thereon；
Cushion (2), the cushion (2) are grown on substrate (1)；
Lower speculum multilayer film (3), the lower speculum multilayer film (3) are grown on cushion (2)；
Barrier layer (4), the barrier layer (4) are grown on lower speculum multilayer film (3)；
Delta doping layer (5), the delta doping layer (5) are grown on barrier layer (4)；
Separation layer (6), the separation layer (6) are grown on delta doping layer (5)；
Absorbed layer (7), the absorbed layer (7) are grown on separation layer (6)；
Quantum dot layer (8), the quantum dot layer (8) are grown on absorbed layer (7)；
Contact layer (9), the contact layer (9) are grown on quantum dot layer (8)；
Drain electrode (10), gate electrode (11), source electrode (12), by photoetching corrosion, it is deposited on contact layer (9)；
GaAs contact layer/air contact surfaces (13) are formed between the upper surface of contact layer (9) and air.
2. the quantum dot field-effect single-photon detector according to claim 1 based on microcavity, it is characterised in that the lining
Bottom (1) is GaAs substrates.
3. the quantum dot field-effect single-photon detector according to claim 1 based on microcavity, it is characterised in that described slow
It is GaAs materials to rush layer (2).
4. the quantum dot field-effect single-photon detector according to claim 1 based on microcavity, it is characterised in that under described
Speculum multilayer film (3) is the AlAs/Al of 20 pairs of alternating growths0.15Ga0.85As material layers.
5. the quantum dot field-effect single-photon detector according to claim 1 based on microcavity, it is characterised in that the gesture
Barrier layer (4) is Al0.26Ga0.74As materials.
6. the quantum dot field-effect single-photon detector according to claim 1 based on microcavity, it is characterised in that the δ
Doped layer (5) adulterates for Si- δ.
7. the quantum dot field-effect single-photon detector according to claim 1 based on microcavity, it is characterised in that it is described every
Absciss layer (6) is Al0.26Ga0.74As materials.
8. the quantum dot field-effect single-photon detector according to claim 1 based on microcavity, it is characterised in that the suction
It is GaAs materials to receive layer (7).
9. the quantum dot field-effect single-photon detector according to claim 1 based on microcavity, it is characterised in that the amount
Son point layer (8) is InAs quantum dots.
10. the quantum dot field-effect single-photon detector according to claim 1 based on microcavity, it is characterised in that described
Contact layer (9) is GaAs materials.
11. the quantum dot field-effect single-photon detector according to claim 1 based on microcavity, it is characterised in that detection
The Al of device0.26Ga0.74As separation layers (6) and GaAs absorbed layers (7) constitute a heterojunction structure, the shape at two kinds of material interfaces
Into two-dimensional electron gas；For detector using two-dimensional electron gas as conductive channel, passage both ends are respectively source electrode (12) and electric leakage
Pole (10)；Simultaneously because delta doping layer (5) employs δ doping techniques, the two-dimensional electron gas conductive channel of detector is with higher
Electron mobility.
12. the quantum dot field-effect single-photon detector according to claim 2 based on microcavity, it detects mechanism and is,
After photon incidence, absorbed in absorbed layer (7) and produce light induced electron and photohole, under the effect of gate electrode (11) back bias voltage
Light induced electron enters conductive channel and participates in conduction, simultaneously because quantum dot confinement effect, photohole are captured by quantum dot；Quantum
The intensity that additional grid electric field is weakened after photohole is captured and fettered to point, causes the increase of conductive channel conductance, that is, forms
Photoconductive gain.
13. the quantum dot field-effect single-photon detector according to claim 1 based on microcavity, it is characterised in that
Between GaAs contact layers/air contact surfaces (13) and lower speculum multilayer film (3), micro-cavity structure is formd；Incident light enters in a subtle way
Resonant check is obtained after chamber, makes detector that there is higher efficiency of light absorption and optical responsivity；Simultaneously because the wavelength choosing of microcavity
Selecting property, the interference of outside noise can be greatly reduced, make detector that there is relatively low dark count rate.
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| WO2017094277A1 (en) * | 2015-12-01 | 2017-06-08 | シャープ株式会社 | Avalanche photodiode |
| CN108565311B (en) * | 2017-11-30 | 2019-08-23 | 中国科学院微电子研究所 | Photodetector and its production method |
| CN110808298B (en) * | 2019-11-14 | 2021-07-06 | 中国电子科技集团公司第四十四研究所 | Graded potential barrier low-dark-current mesa photodiode and manufacturing method thereof |
| CN110970511A (en) * | 2019-12-29 | 2020-04-07 | 中国科学院西安光学精密机械研究所 | All-solid-state photon enhanced thermionic emission photoelectric conversion device with nano spacer layer |
| WO2022157888A1 (en) * | 2021-01-21 | 2022-07-28 | 三菱電機株式会社 | Avalanche photodiode |
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| US7462859B2 (en) * | 2006-10-02 | 2008-12-09 | Hrl Laboratories, Llc | Quantum well design for a coherent, single-photon detector with spin resonant transistor |
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Patent Citations (4)
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| GB2352087B (en) * | 1999-07-10 | 2002-06-26 | Toshiba Res Europ Ltd | Photon detector |
| CN101335309A (en) * | 2008-07-30 | 2008-12-31 | 中国科学院上海技术物理研究所 | Method for enhancing dynamic range of quantum dot resonance tunneling diode photodetector |
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