CN111428364A - Method, system and medium for optimally blocking noise of impurity band detector - Google Patents
Method, system and medium for optimally blocking noise of impurity band detector Download PDFInfo
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Abstract
The invention provides a method, a system and a medium for optimizing and blocking noise of a detector in an impurity band. The method has the advantages that the relation between the extracted noise spectrum density and the thickness of the blocking layer of the blocking impurity band detector obtained by different material systems and different process conditions can be aimed at, the customized blocking layer thickness under specific working bias voltage and specific working temperature can be obtained, the noise spectrum density of the detector designed and manufactured by the method can meet the design requirements, repeated test pieces for optimizing the noise design of the detector are avoided, the research and development period of the detector is greatly shortened, and the research and development cost is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric detectors, in particular to a method, a system and a medium for optimally blocking noise of an impurity band detector.
Background
The terahertz wave is generally an electromagnetic wave with the wavelength of 30-3000 mu m (the frequency is 0.1-10 THz), has high reflectivity to metal and high transmittance to most dielectric materials and nonpolar materials, can be made into a terahertz human body security inspection instrument for detecting and identifying human body hidden objects by utilizing the characteristics, and can also be made into a terahertz nondestructive inspection instrument for detecting internal defects of aerospace materials. In addition, terahertz waves also have fingerprint characteristics, thermal effects and cloud and mist penetration capacity, so the terahertz technology has wide application prospects in the fields of biomedical treatment, atmospheric monitoring, astronomical observation and the like, for example: in the field of biological medical treatment, the terahertz technology can be used for diagnosis and treatment of cancer, because biomacromolecules such as cancer cells and the like have a plurality of characteristic absorption peaks for identification in a terahertz spectrum, and the thermal effect of terahertz waves can promote the vibration activation of enzymes, DNA and other organic macromolecules in vivo forming the cells and strengthen the repair mechanism of the DNA, so that the cancer cells are inhibited; in the field of atmosphere monitoring, compared with the classical infrared technology (only the atmosphere of the stratosphere can be monitored), the monitoring range of the terahertz technology can completely cover the stratosphere to the wide airspace of the troposphere, so that the technical guarantee is provided for acquiring richer monitoring information; in the field of astronomical observation, the terahertz technology can be used for observing radiation signals from remote galaxies, gas stars and new stars, and provides a technical means for modern leading edge scientific researches such as universe explosion, black holes, dark substances, gravitational waves and the like.
Currently, the research on terahertz technology mainly focuses on terahertz sources and terahertz detectors. The terahertz detector comprises a Schottky diode, a bolometer, a thermionic bolometer, a superconducting-insulator-superconducting mixer, a superconducting tunnel junction detector, a superconducting phase change edge detector, a quantum well detector, an impurity blocking band detector and the like, and different detectors correspond to different detection principles. For example: the Schottky diode realizes terahertz detection by improving response frequency based on a microwave technology; and a Blocking Impurity Band (BIB) detector realizes terahertz detection by reducing response frequency based on an infrared technology. Compared with a non-refrigeration detector Schottky diode, the BIB detector is a refrigeration detector and has the advantages of high sensitivity, large area array, wide spectrum band and the like. The BIB detector can be implemented based on three material systems (i.e., silicon-based, germanium-based, and gallium arsenide-based). Among them, the silicon-based BIB detector (with a cutoff frequency of 6THz) is most widely used because silicon materials are the most mature among three material systems; germanium-based BIB detectors can lower the cut-off frequency to 1.4THz because the confinement energy of shallow impurity levels in germanium materials (11.3meV) is much lower than that of silicon materials (45.6 meV); the gaas BIB detector can further reduce the cutoff frequency to 0.4THz because the shallow impurity levels in the gaas material have a very low confinement energy (5.6 meV).
The noise spectral density, which is a key index for characterizing the performance of the BIB detector, is defined as the effective noise current of the detector in a unit bandwidth, and the magnitude of the effective noise current is determined by the working bias voltage, the working temperature and the thickness of the blocking layer of the detector. The operating bias and temperature of the probe are collectively referred to as the operating conditions of the probe, and from an engineering design point of view, the operating bias of the probe is determined by the observation mode of the load (edge observation or earth observation), while the operating temperature of the probe is determined by the efficiency, power and weight of the refrigerator together, except that the thickness of the barrier layer is determined by the probe itself. Therefore, it is desirable to develop noise engineering of the barrier thickness prior to detector flow sheet to achieve a tailored barrier thickness at a specific operating bias and a specific operating temperature. Aiming at the noise design of the BIB detector, the conventional method is to design a series of BIB detectors with different barrier layer thicknesses for test pieces, and then the test pieces are preferentially selected according to test piece results, so that the time and the economic cost are high.
Patent document CN105633215A (application number: 201610125888.0) discloses a method for optimizing the thickness of a blocking layer of a blocking impurity band detector, which first obtains the optimal blocking layer thickness of the blocking impurity band detector through numerical simulation and data fitting, wherein the optimal blocking layer thickness enables the detector to obtain high response rate and low noise, and then designs and manufactures a high-performance blocking impurity band detector according to the optimized result.
Disclosure of Invention
In view of the shortcomings in the prior art, it is an object of the present invention to provide a method, system and medium for optimally blocking the noise of an impurity band detector.
The method for optimally blocking the noise of the impurity band detector comprises the following steps:
step 1: constructing a structural model of the impurity blocking band detector;
step 2: a physical model constructed according to the structural model;
and step 3: manufacturing a material sample of the impurity blocking zone, extracting physical parameters of the material sample, inputting the physical parameters into a physical model, and completing construction of a numerical model of the impurity blocking zone detector;
and 4, step 4: selecting the fixed temperature T of the detector according to the numerical model1And fixed barrier thickness h1The working temperature T is obtained by numerical simulationO＝T1And the thickness h of the barrier layerB＝h1Dark current characteristic curve of time detector, wherein the dark currentThe current passing through the detector during no terahertz radiation is detected, and the dark current characteristic curve is the dark current I of the detectorDInclined to U along with workOA profile of change;
and 5: thickness h of the fixed barrier at different values1Lower, respectively changing the operating temperature TOTo obtain different fixed barrier layer thicknesses h1Lower, different working temperature TOA corresponding detector dark current characteristic curve;
step 6: selecting working bias voltage U of detector according to observation mode of loadOTo a fixed bias U1According to the dark current characteristic curve of the detector, the current working bias voltage U is extractedO＝U1While, different barrier layer thicknesses hBCorresponding dark current IDDependent on the operating temperature TOA change curve;
and 7: selecting the working temperature T of the detector according to the efficiency, power and weight of the refrigeratorOTo a fixed temperature T2According to the current working bias voltage UO＝U1While, different barrier layer thicknesses hBCorresponding dark current IDDependent on the operating temperature TOChange curve, extracting the working temperature TO＝T2And a working bias voltage UO＝U1Time, detector dark current IDDependent on the thickness h of the barrier layerBCurve of variation according to noise spectral density NSDAnd dark current IDThe corresponding relation of (A) is obtained as the working temperature TO＝T2And a working bias voltage UO＝U1Time, detector noise spectral density NSDDependent on the thickness h of the barrier layerBObtaining a fitting working temperature T by the changed curve2And a working bias voltage U1Lower detector noise spectral density NSDDependent on the thickness h of the barrier layerBFunction of the curve of variation NSD(hB)；
And 8: according to the functional formula NSD(hB) By reverse-pushing to obtain the functional formula hB(NSD) According to the functional formula hB(NSD) And noise spectral density NSDExtracting the thickness h of the customized barrier layerB；
And step 9: sequentially growing an absorption layer and a barrier layer on the high-conductivity substrate by adopting the same material system and process conditions as those of the impurity band blocking material sample, wherein the thickness of the barrier layer is the customized barrier layer thickness hBAnd finishing the preparation of the impurity blocking band detector by adopting a micro-nano process.
Preferably, the step 1 comprises:
step 1.1: sequentially forming an absorption layer, a barrier layer, an electrode layer and a passivation layer on a high-conductivity substrate;
step 1.2: a positive electrode is formed on the electrode layer, and a negative electrode is formed on the high-conductivity substrate.
Preferably, the step 2 includes: the method comprises the steps of establishing a simultaneous Poisson equation, an electron-hole continuity equation, an electron-hole current density equation, adding a carrier recombination rate and a photon-generated carrier generation rate into the continuity equation through generating a recombination term, wherein the carrier recombination term comprises SRH recombination, radiative recombination and Auger recombination, and discretizing simultaneous iterative solution by a finite element method according to a low-temperature freezeout effect, a barrier tunneling effect and a speed saturation effect of carriers.
Preferably, the step 3 comprises: growing a heavily doped absorption layer and an intrinsic barrier layer on a high-conductivity substrate in sequence to serve as an impurity band blocking material sample, and measuring and extracting physical parameters of the impurity band blocking material sample, wherein the measured physical parameters comprise: the carrier mobility and the lifetime of the sample, the doping concentration and the thickness of the substrate, the doping concentration and the thickness of the absorption layer and the doping concentration and the thickness of the barrier layer.
Preferably, the step 5 comprises:
step 5.1: varying the operating temperature TOThe thickness h of the barrier layer is obtained by numerical simulationB＝h1At different working temperatures TOA series of curves of corresponding detector dark current characteristics;
step 5.2: varying the thickness h of the fixed barrier1The thickness h of the fixed barrier layer with different values is selected1And repeating the step 5.1 until the thickness h of the barrier layer is obtainedBEqual to the thickness h of the different fixed barrier layers1At different working temperaturesDegree TOA series of curves corresponding to the dark current characteristics of the detector.
Preferably, the step 7 includes: noise spectral density NSDAnd dark current IDHas a corresponding relationship of
Wherein the unit charge capacity q is 1.60218 × 10-19C。
Preferably, the step 9 comprises: the preparation process of the micro-nano process comprises the following steps: photoetching mark manufacturing, electronic collection layer manufacturing, photosensitive table top manufacturing, ohmic electrode manufacturing, passivation layer manufacturing, electrode hole manufacturing and thickened electrode manufacturing.
The system for optimally blocking the noise of the impurity band detector provided by the invention comprises the following components:
module M1: constructing a structural model of the impurity blocking band detector;
module M2: a physical model constructed according to the structural model;
module M3: manufacturing a material sample of the impurity blocking zone, extracting physical parameters of the material sample, inputting the physical parameters into a physical model, and completing construction of a numerical model of the impurity blocking zone detector;
module M4: selecting the fixed temperature T of the detector according to the numerical model1And fixed barrier thickness h1The working temperature T is obtained by numerical simulationO＝T1And the thickness h of the barrier layerB＝h1A dark current characteristic curve of the time detector, wherein the dark current is a current passing through the time detector when no terahertz radiation is generated, and the dark current characteristic curve is a dark current I of the time detectorDInclined to U along with workOA profile of change;
module M5: thickness h of the fixed barrier at different values1Lower, respectively changing the operating temperature TOTo obtain different fixed barrier layer thicknesses h1Lower, different working temperature TOA corresponding detector dark current characteristic curve;
module M6: selecting working bias voltage U of detector according to observation mode of loadOTo a fixed bias U1According to the dark current characteristic curve of the detector, the current working bias voltage U is extractedO＝U1While, different barrier layer thicknesses hBCorresponding dark current IDDependent on the operating temperature TOA change curve;
module M7: selecting the working temperature T of the detector according to the efficiency, power and weight of the refrigeratorOTo a fixed temperature T2According to the current working bias voltage UO＝U1While, different barrier layer thicknesses hBCorresponding dark current IDDependent on the operating temperature TOChange curve, extracting the working temperature TO＝T2And a working bias voltage UO＝U1Time, detector dark current IDDependent on the thickness h of the barrier layerBCurve of variation according to noise spectral density NSDAnd dark current IDThe corresponding relation of (A) is obtained as the working temperature TO＝T2And a working bias voltage UO＝U1Time, detector noise spectral density NSDDependent on the thickness h of the barrier layerBObtaining a fitting working temperature T by the changed curve2And a working bias voltage U1Lower detector noise spectral density NSDDependent on the thickness h of the barrier layerBFunction of the curve of variation NSD(hB)；
Module M8: according to the functional formula NSD(hB) By reverse-pushing to obtain the functional formula hB(NSD) According to the functional formula hB(NSD) And noise spectral density NSDExtracting the thickness h of the customized barrier layerB；
Module M9: sequentially growing an absorption layer and a barrier layer on the high-conductivity substrate by adopting the same material system and process conditions as those of the impurity band blocking material sample, wherein the thickness of the barrier layer is the customized barrier layer thickness hBAnd finishing the preparation of the impurity blocking band detector by adopting a micro-nano process.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention can lead the noise frequency spectrum density to meet the design requirement, thereby providing reliable basis for designing and manufacturing the high-performance blocking impurity band terahertz detector;
2. the method for optimizing the noise design of the impurity band blocking detector provided by the invention can extract the relation between the noise spectral density and the thickness of the blocking layer aiming at the impurity band blocking detector obtained by different material systems (comprising silicon-based, germanium-based and gallium arsenide-based) and different process conditions (comprising a gas phase epitaxy process, a liquid phase epitaxy process and a molecular beam epitaxy process), and further obtain the customized blocking layer thickness under specific working bias voltage and specific working temperature, so that the noise spectral density of the designed and manufactured detector meets the design requirement, repeated test pieces for optimizing the noise design of the detector are avoided, the research and development period of the detector is greatly shortened, and the research and development cost is reduced.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic diagram of a blocking impurity band detector;
FIG. 2 shows the thickness h of the barrier layerBA series of graphs of dark current characteristics of the detector corresponding to different working temperatures at 4 mu m;
FIG. 3 shows the thickness h of the barrier layerBA series of graphs of dark current characteristics of the detector corresponding to different working temperatures at 6 mu m;
FIG. 4 shows the thickness h of the barrier layerBA series of graphs of dark current characteristics of the detector corresponding to different working temperatures at the time of 8 mu m;
FIG. 5 shows the thickness h of the barrier layerBA series of graphs of dark current characteristics of the detector corresponding to different working temperatures at 10 mu m;
FIG. 6 shows the operating bias UOA series of graphs (linear coordinates) of dark current versus operating temperature for different barrier layer thicknesses at 3V;
FIG. 7 shows the operating bias UOA series of graphs (logarithmic scale) of dark current versus operating temperature for different barrier layer thicknesses at 3V;
FIG. 8 shows the operating temperature T O6K and operating bias U O3V time detectorA graph of dark current as a function of barrier layer thickness;
FIG. 9 shows the operating temperature T O6K and operating bias UOA fitting curve graph of the detector noise frequency spectrum density along with the change of the thickness of the barrier layer when the curve is 3V;
the figures show that: 1-a high conductivity substrate; 2-an absorbing layer; 3-a barrier layer; 4-an electrode layer; 5-a passivation layer; 6-positive electrode; 7-negative electrode.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that it would be obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit of the invention. All falling within the scope of the present invention.
The method for optimizing the noise design of the BIB detector provided by the invention comprises the following steps:
step 1: constructing a structural model of a Blocking Impurity Band (BIB) detector;
step 1.1: sequentially forming an absorption layer, a barrier layer, an electrode layer and a passivation layer on a high-conductivity substrate;
step 1.2: forming a positive electrode on the electrode layer, and forming a negative electrode on the high-conductivity substrate;
specifically, as shown in fig. 1, a heavily doped N-type absorption layer, an intrinsic barrier layer, a heavily doped N-type electrode layer, and a silicon nitride passivation layer are sequentially formed on an N-type high conductivity silicon substrate, and then a positive electrode is formed on the heavily doped N-type electrode layer, and a negative electrode is formed on the N-type high conductivity silicon substrate.
Step 2: constructing a corresponding physical model according to the structural model of the BIB probe constructed in the step S1;
specifically, a simultaneous Poisson equation, an equation of continuity of electrons and holes, an equation of current density of electrons and holes, and a carrier recombination rate and a photon-generated carrier generation rate are added into the equation of continuity by generating recombination terms, wherein the carrier recombination terms comprise SRH recombination, radiative recombination and Auger recombination, and besides, a low-temperature freezeout effect, a potential barrier tunneling effect and a speed saturation effect of carriers need to be considered, and a simultaneous iterative solution is discretized by a finite element method.
And step 3: manufacturing a BIB material sample, extracting key physical parameters of the BIB material sample, inputting the extracted key physical parameters into the physical model constructed in the step 2, and completing construction of a numerical model of the BIB detector;
specifically, a heavily doped absorption layer and an intrinsic barrier layer are sequentially grown on a high-conductivity substrate to serve as a BIB material sample, and key physical parameters of the BIB material sample are measured and extracted, wherein the measured key physical parameters comprise: the carrier mobility and the lifetime of the sample, the doping concentration and the thickness of the substrate, the doping concentration and the thickness of the absorption layer and the doping concentration and the thickness of the barrier layer.
Further, a heavily doped N-type absorption layer and an intrinsic barrier layer are sequentially grown on an N-type high-conductivity silicon substrate by adopting a Vapor Phase Epitaxy (VPE) process to serve as a silicon-based BIB material sample, and then the electron mobility mu is obtained by adopting a low-temperature Hall test methode＝3.95×106cm2Vs, hole mobility μh＝3.84×105cm2Vs, electron lifetime τe＝1×10-3s, hole lifetime τh＝3×10-4s, obtaining substrate doping concentration N by adopting an extended resistance analysis methodS＝2×1019cm-3Thickness of substrate hS450 μm, absorption layer doping concentration NA＝6×1017cm-3Thickness h of the absorption layerA30 μm, barrier doping concentration NB＝1×1013cm-3Thickness h of the barrier layerB＝4μm。
And 4, step 4: selecting a fixed temperature T which enables the detector to normally work according to the numerical model constructed in the step 31And fixed barrier thickness h1The working temperature T is obtained by numerical simulationO＝T1And the thickness h of the barrier layerB＝h1A dark current characteristic curve of the time detector, wherein the dark current is a current passing through the detector during no terahertz irradiation, and the dark current characteristic curve is detectionDark current I of the deviceDInclined to U along with workOA profile of change;
specifically, a fixed temperature T is selected to enable the detector to work normally15K and fixed barrier thickness h 14 μm, obtained by numerical simulation, as the operating temperature TO＝T15K and barrier thickness hB＝h1The dark current characteristic curve of the detector at 4 μm is shown by the curve marked by the black hexagonal symbol in fig. 2.
And 5: thickness h of the fixed barrier at different values1Lower, respectively changing the operating temperature TOTo obtain different fixed barrier layer thicknesses h1Lower, different working temperature TOA series of curves of corresponding detector dark current characteristics;
step 5.1: varying the operating temperature TOThe thickness h of the barrier layer is obtained by numerical simulationB＝h1At different working temperatures TOA series of curves of corresponding detector dark current characteristics;
step 5.2: varying the thickness h of the fixed barrier1The thickness h of the fixed barrier layer with different values is selected1And repeating the step 5.1 to obtain the thickness h of the barrier layerBEqual to the thickness h of the different fixed barrier layers1At different working temperatures TOA series of curves of corresponding detector dark current characteristics;
in particular, the operating temperature T is variedOThe thickness h of the barrier layer is obtained by numerical simulationB＝h1At 4 μm, different working temperatures TOA series of curves corresponding to the dark current characteristics of the detector, as shown in fig. 2; varying the thickness h of the fixed barrier1Is selected to be the thickness h of the fixed barrier layer 16 μm, 8 μm and 10 μm, respectively, to obtain the thickness of the barrier layer hB＝h 16 μm, 8 μm and 10 μm, different working temperatures TOA series of curves for the corresponding detector dark current characteristics are shown in fig. 3-5.
Step 6: selecting the working bias voltage U of the detector according to the observation mode (edge observation or earth observation) of the loadOTo a fixed bias voltageU1Then according to the thickness h of the barrier layer obtained in step 5BEqual to the thickness h of the different fixed barrier layers1At different working temperatures TOExtracting the current bias voltage U of the corresponding detectorO＝U1While, different barrier layer thicknesses hBCorresponding dark current IDDependent on the operating temperature TOA series of curves that vary;
in particular, the operating bias U of the probe is selected according to the observation mode of the load (for example: observation to earth)OTo a fixed bias U 13V, then according to step 5, the thickness h of the barrier layerB＝h 16 μm, 8 μm and 10 μm, different working temperatures TOExtracting the current bias voltage U of the corresponding detectorO＝U1At 3V, different barrier layer thicknesses hBCorresponding dark current IDDependent on the operating temperature TOA series of curves of change as shown in fig. 6-7.
And 7: the working temperature T of the detector is selected according to the efficiency, power and weight compromise of the refrigeratorOTo a fixed temperature T2Then according to the working bias voltage U obtained in step 6O＝U1While, different barrier layer thicknesses hBCorresponding dark current IDDependent on the operating temperature TOA series of curves of change, extracting the working temperature TO＝T2And a working bias voltage UO＝U1Time, detector dark current IDDependent on the thickness h of the barrier layerBThe curve of the variation, in turn, according to the noise spectral density NSDAnd dark current IDThe corresponding relation of (A) is obtained as the working temperature TO＝T2And a working bias voltage UO＝U1Time, detector noise spectral density NSDDependent on the thickness h of the barrier layerBObtaining a fitting working temperature T by the changed curve2And a working bias voltage U1Lower detector noise spectral density NSDDependent on the thickness h of the barrier layerBFunction of the curve of variation NSD(hB)；
In particular, according to the efficiency of the pulse tube refrigerator,Selecting working temperature T of detector in power and weight compromiseOTo a fixed temperature T 26K, then according to the current operating bias U obtained in step 6O＝U1At 3V, different barrier layer thicknesses hBCorresponding dark current IDDependent on the operating temperature TOA series of curves of change, extracting the working temperature TO＝T 26K and operating bias UO＝U1When 3V, the detector dark current IDDependent on the thickness h of the barrier layerBThe curves of change, as shown in fig. 8; and then according to the noise spectral density NSDAnd dark current IDThe corresponding relation of (1):
wherein the unit charge capacity q is 1.60218 × 10-19C, obtaining the working temperature TO＝T 26K and operating bias UO＝U1Detector noise spectral density N at 3VSDDependent on the thickness h of the barrier layerBThe curves of change, as shown in fig. 9; obtaining a fitting working temperature T 26K and operating bias U1Detector noise spectral density N at 3VSDDependent on the thickness h of the barrier layerBFunction of the curve of variation NSD(hB)：
And 8: functional formula N obtained in step 7SD(hB) Is reversely deduced to obtain hB(NSD) According to said functional formula hB(NSD) And designed noise spectral density NSDExtracting the corresponding customized barrier thickness hB；
Specifically, the functional formula N obtained in step 7SD(hB) Is reversely deduced to obtain hB(NSD) Expression (c):
according to said function formula hB(NSD) And designed noise spectral density NSD＝2×10-12A/Hz1/2Extracting the corresponding customized barrier thickness hB＝12.74μm。
And step 9: adopting the same material system and process conditions as the BIB material sample in the step 3 to sequentially grow an absorption layer and a barrier layer on the high-conductivity substrate, wherein the thickness of the barrier layer is designed to be the thickness h of the customized barrier layer obtained in the step 8BThen, the BIB detector is prepared through micro-nano process flows of photoetching mark manufacturing, electronic collection layer manufacturing, photosensitive table surface manufacturing, ohmic electrode manufacturing, passivation layer manufacturing, electrode hole manufacturing, thickened electrode manufacturing and the like;
specifically, the method for manufacturing the detector by utilizing the thickness of the customized blocking layer obtained by the method for optimizing the noise design of the BIB detector comprises the following steps:
step A1, growing a heavily doped N-type absorption layer with the thickness of 30 microns and an intrinsic barrier layer with the thickness of 12.74 microns on an N-type high-conductivity silicon substrate with the thickness of 450 microns in sequence by adopting the same material system and process conditions as those of the silicon-based BIB material sample in the step 3 and adopting a Vapor Phase Epitaxy (VPE) process, wherein the doping concentrations of the substrate, the absorption layer and the barrier layer are respectively 2 × 1019cm-3、6×1017cm-3And 1 × 1013cm-3；
Step A2: obtaining a mark area window on the barrier layer through a photoetching process, depositing Ti/Au double-layer metal by adopting an electron beam evaporation process, and then completing photoetching mark manufacture after acetone stripping;
step A3: obtaining a window required by ion injection on the barrier layer through a photoetching process, injecting phosphorus ions into the window area, and then completing the manufacture of the electron collection layer after a rapid thermal annealing process;
step A4: obtaining a window required by etching on the electrode layer through a photoetching process, and longitudinally etching by 45 microns by adopting a deep silicon etching process to remove the electron collecting layer, the barrier layer and the absorption layer in the window area to finish the manufacture of the photosensitive table top;
step A5: obtaining windows of a positive electrode area and a negative electrode area by utilizing a photoetching process, depositing four layers of metals of Ti/Al/Ni/Au by adopting an electron beam evaporation process, and then completing the manufacture of an ohmic electrode after acetone stripping and annealing processes;
step A6: adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) process to grow silicon nitride with the thickness of 500nm to finish the manufacture of a passivation layer;
step A7: forming a window required for corrosion in an ohmic electrode area by utilizing a photoetching process, and then corroding silicon nitride in the electrode area by using a hydrofluoric acid buffer solution to complete the manufacture of an electrode hole;
step A8: and (3) obtaining the window of the ohmic electrode area again by utilizing a photoetching process, depositing Ni/Au double-layer metal by adopting an electron beam evaporation process, and then stripping by acetone to finish the manufacture of the thickened electrode. And finishing the preparation of the silicon-based BIB detector with the noise spectral density meeting the design requirement.
In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.
Those skilled in the art will appreciate that, in addition to implementing the systems, apparatus, and various modules thereof provided by the present invention in purely computer readable program code, the same procedures can be implemented entirely by logically programming method steps such that the systems, apparatus, and various modules thereof are provided in the form of logic gates, switches, application specific integrated circuits, programmable logic controllers, embedded microcontrollers and the like. Therefore, the system, the device and the modules thereof provided by the present invention can be considered as a hardware component, and the modules included in the system, the device and the modules thereof for implementing various programs can also be considered as structures in the hardware component; modules for performing various functions may also be considered to be both software programs for performing the methods and structures within hardware components.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.
Claims (9)
1. A method for optimizing blocking of impurity band detector noise, comprising:
step 1: constructing a structural model of the impurity blocking band detector;
step 2: a physical model constructed according to the structural model;
and step 3: manufacturing a material sample of the impurity blocking zone, extracting physical parameters of the material sample, inputting the physical parameters into a physical model, and completing construction of a numerical model of the impurity blocking zone detector;
and 4, step 4: selecting the fixed temperature T of the detector according to the numerical model1And fixed barrier thickness h1The working temperature T is obtained by numerical simulationO＝T1And the thickness h of the barrier layerB＝h1A dark current characteristic curve of the time detector, wherein the dark current is a current passing through the time detector when no terahertz radiation is generated, and the dark current characteristic curve is a dark current I of the time detectorDInclined to U along with workOA profile of change;
and 5: thickness h of the fixed barrier at different values1Lower, respectively changing the operating temperature TOTo obtain different fixed barrier layer thicknesses h1Lower, different working temperature TOA corresponding detector dark current characteristic curve;
step 6: selecting working bias voltage U of detector according to observation mode of loadOTo a fixed bias U1According to the dark current characteristic curve of the detector, the current working bias voltage U is extractedO＝U1While, different barrier layer thicknesses hBCorresponding dark current IDAt workTemperature TOA change curve;
and 7: selecting the working temperature T of the detector according to the efficiency, power and weight of the refrigeratorOTo a fixed temperature T2According to the current working bias voltage UO＝U1While, different barrier layer thicknesses hBCorresponding dark current IDDependent on the operating temperature TOChange curve, extracting the working temperature TO＝T2And a working bias voltage UO＝U1Time, detector dark current IDDependent on the thickness h of the barrier layerBCurve of variation according to noise spectral density NSDAnd dark current IDThe corresponding relation of (A) is obtained as the working temperature TO＝T2And a working bias voltage UO＝U1Time, detector noise spectral density NSDDependent on the thickness h of the barrier layerBObtaining a fitting working temperature T by the changed curve2And a working bias voltage U1Lower detector noise spectral density NSDDependent on the thickness h of the barrier layerBFunction of the curve of variation NSD(hB)；
And 8: according to the functional formula NSD(hB) By reverse-pushing to obtain the functional formula hB(NSD) According to the functional formula hB(NSD) And noise spectral density NSDExtracting the thickness h of the customized barrier layerB；
And step 9: sequentially growing an absorption layer and a barrier layer on the high-conductivity substrate by adopting the same material system and process conditions as those of the impurity band blocking material sample, wherein the thickness of the barrier layer is the customized barrier layer thickness hBAnd finishing the preparation of the impurity blocking band detector by adopting a micro-nano process.
2. The method for optimizing blocking of impurity band detector noise according to claim 1, wherein said step 1 comprises:
step 1.1: sequentially forming an absorption layer, a barrier layer, an electrode layer and a passivation layer on a high-conductivity substrate;
step 1.2: a positive electrode is formed on the electrode layer, and a negative electrode is formed on the high-conductivity substrate.
3. The method for optimizing blocking of impurity band detector noise according to claim 1, wherein said step 2 comprises: the method comprises the steps of establishing a simultaneous Poisson equation, an electron-hole continuity equation, an electron-hole current density equation, adding a carrier recombination rate and a photon-generated carrier generation rate into the continuity equation through generating a recombination term, wherein the carrier recombination term comprises SRH recombination, radiative recombination and Auger recombination, and discretizing simultaneous iterative solution by a finite element method according to a low-temperature freezeout effect, a barrier tunneling effect and a speed saturation effect of carriers.
4. The method for optimizing blocking of impurity band detector noise according to claim 1, wherein said step 3 comprises: growing a heavily doped absorption layer and an intrinsic barrier layer on a high-conductivity substrate in sequence to serve as an impurity band blocking material sample, and measuring and extracting physical parameters of the impurity band blocking material sample, wherein the measured physical parameters comprise: the carrier mobility and the lifetime of the sample, the doping concentration and the thickness of the substrate, the doping concentration and the thickness of the absorption layer and the doping concentration and the thickness of the barrier layer.
5. The method for optimizing blocking of impurity band detector noise according to claim 1, wherein said step 5 comprises:
step 5.1: varying the operating temperature TOThe thickness h of the barrier layer is obtained by numerical simulationB＝h1At different working temperatures TOA series of curves of corresponding detector dark current characteristics;
step 5.2: varying the thickness h of the fixed barrier1The thickness h of the fixed barrier layer with different values is selected1And repeating the step 5.1 until the thickness h of the barrier layer is obtainedBEqual to the thickness h of the different fixed barrier layers1At different working temperatures TOA series of curves corresponding to the dark current characteristics of the detector.
6. Optimized blocking of impurity band detector noise according to claim 1Acoustic method, characterized in that said step 7 comprises: noise spectral density NSDAnd dark current IDHas a corresponding relationship of
Wherein the unit charge capacity q is 1.60218 × 10-19C。
7. The method for optimizing blocking of impurity band detector noise according to claim 1, wherein said step 9 comprises: the preparation process of the micro-nano process comprises the following steps: photoetching mark manufacturing, electronic collection layer manufacturing, photosensitive table top manufacturing, ohmic electrode manufacturing, passivation layer manufacturing, electrode hole manufacturing and thickened electrode manufacturing.
8. A system for optimally blocking contaminant band detector noise, comprising:
module M1: constructing a structural model of the impurity blocking band detector;
module M2: a physical model constructed according to the structural model;
module M3: manufacturing a material sample of the impurity blocking zone, extracting physical parameters of the material sample, inputting the physical parameters into a physical model, and completing construction of a numerical model of the impurity blocking zone detector;
module M4: selecting the fixed temperature T of the detector according to the numerical model1And fixed barrier thickness h1The working temperature T is obtained by numerical simulationO＝T1And the thickness h of the barrier layerB＝h1A dark current characteristic curve of the time detector, wherein the dark current is a current passing through the time detector when no terahertz radiation is generated, and the dark current characteristic curve is a dark current I of the time detectorDInclined to U along with workOA profile of change;
module M5: thickness h of the fixed barrier at different values1Lower, respectively changing the operating temperature TOTo obtain different fixed barrier layer thicknesses h1Lower, different working temperature TOA corresponding detector dark current characteristic curve;
module M6: selecting working bias voltage U of detector according to observation mode of loadOTo a fixed bias U1According to the dark current characteristic curve of the detector, the current working bias voltage U is extractedO＝U1While, different barrier layer thicknesses hBCorresponding dark current IDDependent on the operating temperature TOA change curve;
module M7: selecting the working temperature T of the detector according to the efficiency, power and weight of the refrigeratorOTo a fixed temperature T2According to the current working bias voltage UO＝U1While, different barrier layer thicknesses hBCorresponding dark current IDDependent on the operating temperature TOChange curve, extracting the working temperature TO＝T2And a working bias voltage UO＝U1Time, detector dark current IDDependent on the thickness h of the barrier layerBCurve of variation according to noise spectral density NSDAnd dark current IDThe corresponding relation of (A) is obtained as the working temperature TO＝T2And a working bias voltage UO＝U1Time, detector noise spectral density NSDDependent on the thickness h of the barrier layerBObtaining a fitting working temperature T by the changed curve2And a working bias voltage U1Lower detector noise spectral density NSDDependent on the thickness h of the barrier layerBFunction of the curve of variation NSD(hB)；
Module M8: according to the functional formula NSD(hB) By reverse-pushing to obtain the functional formula hB(NSD) According to the functional formula hB(NSD) And noise spectral density NSDExtracting the thickness h of the customized barrier layerB；
Module M9: sequentially growing an absorption layer and a barrier layer on the high-conductivity substrate by adopting the same material system and process conditions as those of the impurity band blocking material sample, wherein the thickness of the barrier layer is the customized barrier layer thickness hBAnd finishing the preparation of the impurity blocking band detector by adopting a micro-nano process.
9. A computer-readable storage medium, in which a computer program is stored which, when being executed by a processor, carries out the steps of the method according to any one of claims 1 to 7.
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