CN105047574A - Spacing-variable measuring method for transverse broadening of N zone of mercury-cadmium-telluride detector - Google Patents
Spacing-variable measuring method for transverse broadening of N zone of mercury-cadmium-telluride detector Download PDFInfo
- Publication number
- CN105047574A CN105047574A CN201510295755.3A CN201510295755A CN105047574A CN 105047574 A CN105047574 A CN 105047574A CN 201510295755 A CN201510295755 A CN 201510295755A CN 105047574 A CN105047574 A CN 105047574A
- Authority
- CN
- China
- Prior art keywords
- junction
- spacing
- pair
- voltage
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a spacing-variable measuring method for the transverse broadening of the N zone of a mercury-cadmium-telluride detector. The method comprises that a series of ion implantation mask layers with PN junctions of different spacings are designed on a prepared ZnS barrier layer and a mercury-cadmium-telluride infrared chip whose marks are aligned in a photoetching process, a passivation layer and metalized ohmic contact are prepared by routine technology after ion implantation, test figures of a series of PN junction broadenings of different spacings are peeled and obtained, a low-temperature cold probe system tests the voltage and current of each PN junction, and the width of the transverse broadening is determined by combining analysis on the current and voltage test result with the spacing of each PN junction. The method is simple in operation, and provides convenience for analyzing the width of the PN junction online.
Description
Technical field:
The present invention relates to Infrared Detectors manufacturing process technology, be specifically related to the method for testing of the N district width extending transversely of HgCdTe infrared focal plane detector PN junction.
Background technology:
Infrared focal plane array device had not only had the imaging sensor of advanced person that infrared information obtains but also have the information processing function, earth observation from space, electrooptical countermeasures, Search/Track, with and the military-civil field such as industrial thermal imaging and guided missile precise guidance have important and apply widely.Due to its irreplaceable importance and functions, infrared focal plane array device technology of preparing is listed in the high technology item given priority to.
Under the driving energetically of senior infrared application system, the important development stage that it is the third generation infrared focal plane detector of feature that Infrared Detectors technology has entered with large face battle array, miniaturization and multicolor etc.A new generation's infrared focal plane detector develops towards large face battle array, long alignment and intelligent direction.Along with the expansion of detector size and improving constantly of photosensitive first integrated level, require that the pixel dimension of infrared detector photosensitive sense element array constantly reduces.This is for infrared focal plane photovoltaic detector, must by accurately controlling the physical dimension of PN junction, and to guarantee high density, little pixel dimension Infrared Detectors still has the photoelectric properties such as high responsiveness and detectivity.Therefore, accurately measure in time and feed back PN junction transverse width and control extremely important to the design and processes of Infrared Detectors.
The laser beam induced current method of usual employing is a kind of method accurately can measuring PN junction two-dimensional.But, the method must separately design test structure and to be encapsulated into test Dewar measure under liquid nitrogen temperature, process Complicated Periodic is longer, cannot realize on-line testing, thus affects the timely judgement of infrared focal plane detector ion implantation technology.In the HgCdTe Infrared Detectors preparation process of reality, can measure and feed back PN junction two-dimensional structure information in time extremely important, raising technological design accuracy and saving technique preparation cost are had very important significance.But the domestic pertinent literature that there is not yet about the wide on-line testing method of HgCdTe infrared focal plane detector PN junction is reported at present.
Summary of the invention:
Based on the problems referred to above, the object of this invention is to provide a kind of change measurement method for distance for the horizontal broadening in mercury-cadmium tellurid detector N district.
For achieving the above object, first the present invention adopts the chip having prepared ZnS barrier layer and alignment mark; Then by photoetching process, the ion implantation mask of a series of different spacing PN junction is designed; Prepare passivation layer and metallized Ohmic contact by common process again after ion implantation, peel off and obtain the resolution chart of a series of different spacing PN junction broadening; Finally, with low temperature cold probe system, current/voltage test is carried out to often pair of PN junction, and by judging horizontal broadening width in conjunction with current/voltage test result analysis and often pair of PN junction spacing.
The method of testing of the horizontal broadening in cadmium-telluride-mercury infrared detector N district of technique scheme is as follows:
1) photoetching implantation hand-hole: on the infrared chip of the mercury cadmium telluride preparing ZnS barrier layer and alignment mark, adopts positive photoresist photoetching to obtain the implantation hand-hole pair of a series of different spacing, and often pair of ion implantation pitch of holes is from 0 μm of change 10 μm;
2) boron ion implantation: ion energy is 120-180KeV, dosage is 1 × 10
13-1 × 10
15cm
-2, line is 50-200 μ A, soaks in acetone and remove photoresist after injection, obtains the PN junction pair of a series of spacing from 0 μm of change 10 μm;
3) passivation and corroding electrode hole: adopt conventional CdTe and ZnS dual layer passivation technique.Adopt positive photoresist photoetching to output corroding electrode hole again on each PN hand-hole, corrode in freezing point pure hydrochloric acid, soak clock after drying up in acetone and remove photoresist;
4) metal electrode preparation: adopt positive photoresist photoetching to output metal electrode at each electrode hole and prepare hole, electron beam evaporation equipment is used to prepare Sn and Au that thickness is respectively 30nm, 100nm, soak in acetone after taking out sample, stripping metal and removal photoresist;
5) current/voltage test: use Keithly4200 low temperature cold probe test system to carry out test spacing from 0 μm of change, 10 μm often pair PN junction current-voltage characteristic;
6) test result analysis: analyze the Changing Pattern of spacing from 0 μm of change, 10 μm often pair PN junction current-voltage characteristic, if motional impedance presents a steady state value with voltage, be judged to be that two PN junctions are communicated with, the PN junction characteristic that motional impedance presents two Opposite direction connections with voltage is then judged to be that two PN junctions are not communicated with;
7) the horizontal broadening in PN junction N district judges: by conjunction with the connectedness of different spacing often pair PN junction and the relation of often pair of PN junction spacing, judge the horizontal broadening width in PN junction N district.
Advantage of the present invention is: dexterously by design often pair of photosensitive first spacing, yardstick test is become electrical testing, effectively can avoid the error because yardstick measuring accuracy brings.This change measurement method for distance, has that technique is simple, simple operation, result of determination is directly perceived and can the feature such as on-line testing analysis.
Accompanying drawing illustrates:
Fig. 1 is process chart.
Fig. 2 be become distance measurement method different spacing PN to metallization after schematic diagram, wherein Fig. 2 (a) be the often pair of different spacing N district schematic diagram becoming distance measurement method, and Fig. 2 (b) is the often pair of different spacing N district schematic diagram being with metallic electrode.
Fig. 3 is for becoming distance measurement method different spacing PN to probe current voltage characteristic test result cold under 80K, the current-voltage characteristic test result of single PN under the different injection condition of Fig. 3 (a), Fig. 3 (b) different spacing PN is to current-voltage characteristic test result.
Embodiment:
Below in conjunction with accompanying drawing, with example, embodiments of the present invention are elaborated:
1) photoetching implantation hand-hole: on the infrared chip of the mercury cadmium telluride preparing ZnS barrier layer and alignment mark, positive photoresist photoetching is adopted to obtain the implantation hand-hole pair of a series of different spacing, often pair of ion implantation pitch of holes changes 10 μm, as shown in Fig. 2 (a) from 0 μm;
2) boron ion implantation: ion energy is 120-180KeV, dosage is 1 × 10
13-1 × 10
15cm
-2, line is 50-200 μ A.Soak in acetone after injection, remove photoresist;
3) passivation and corroding electrode hole: adopt conventional CdTe and ZnS dual layer passivation technique.Positive photoresist photoetching is adopted to output corroding electrode hole again on each PN hand-hole.Corrode in freezing point pure hydrochloric acid, soak in acetone after drying up and remove photoresist;
4) metal electrode preparation: adopt positive photoresist photoetching to output metal electrode at each electrode hole and prepare hole.Electron beam evaporation equipment is used to prepare Sn and Au that thickness is respectively 30nm, 100nm.Soak in acetone after taking out sample, with syringe impact peel metal and removal photoresist, obtain as shown in Fig. 2 (b);
5) current/voltage test: use Keithly4200 test macro to each PN junction to carrying out current-voltage characteristic test, test result as shown in Figure 3;
6) test result analysis: analyze the Changing Pattern of spacing from 0 μm of change, 10 μm often pair PN junction current-voltage characteristic, if motional impedance presents a steady state value with voltage, be judged to be that two PN junctions are communicated with, the PN junction characteristic that motional impedance presents two Opposite direction connections with voltage is then judged to be that two PN junctions are not communicated with;
7) the horizontal broadening of PN junction judges: by conjunction with the connectedness of different spacing often pair PN junction and the relation of often pair of PN junction spacing, judge the horizontal broadening width in PN junction N district.
As can be seen from the current/voltage test result of each PN junction of Fig. 3 (a), the PN junction performance no significant difference of different injection condition; From the current/voltage test result that each PN junction of Fig. 3 (b) is right, can judge that PN junction is to when spacing is 1 μm, motional impedance is a steady state value with change in voltage; And after spacing is greater than 2 μm, motional impedance presents two back-to-back PN junction characteristics with change in voltage.Therefore the one-sided broadening in each N district should be less than 0.5 μm, and the horizontal broadening in each N district is less than 1 μm.
Claims (1)
1., for a change measurement method for distance for the horizontal broadening in mercury-cadmium tellurid detector N district, its feature comprises the steps:
1) photoetching implantation hand-hole: on the infrared chip of the mercury cadmium telluride preparing ZnS barrier layer and alignment mark, adopts positive photoresist photoetching to obtain the implantation hand-hole pair of a series of different spacing, and often pair of ion implantation pitch of holes is from 0 μm of change 10 μm;
2) boron ion implantation: ion energy is 120-180KeV, dosage is 1 × 10
13-1 × 10
15cm
-2, line is 50-200 μ A, soaks in acetone and remove photoresist after injection, obtains the PN junction pair of a series of spacing from 0 μm of change 10 μm;
3) passivation and corroding electrode hole: adopt conventional CdTe and ZnS dual layer passivation technique.Adopt positive photoresist photoetching to output corroding electrode hole again on each PN hand-hole, corrode in freezing point pure hydrochloric acid, soak clock after drying up in acetone and remove photoresist;
4) metal electrode preparation: adopt positive photoresist photoetching to output metal electrode at each electrode hole and prepare hole, electron beam evaporation equipment is used to prepare Sn and Au that thickness is respectively 30nm, 100nm, soak in acetone after taking out sample, stripping metal and removal photoresist;
5) current/voltage test: use Keithly4200 low temperature cold probe test system to carry out test spacing from 0 μm of change, 10 μm often pair PN junction current-voltage characteristic;
6) test result analysis: analyze the Changing Pattern of spacing from 0 μm of change, 10 μm often pair PN junction current-voltage characteristic, if motional impedance presents a steady state value with voltage, be judged to be that two PN junctions are communicated with, the PN junction characteristic that motional impedance presents two Opposite direction connections with voltage is then judged to be that two PN junctions are not communicated with;
7) the horizontal broadening in PN junction N district judges: by conjunction with the connectedness of different spacing often pair PN junction and the relation of often pair of PN junction spacing, judge the horizontal broadening width in PN junction N district.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510295755.3A CN105047574B (en) | 2015-06-02 | 2015-06-02 | A kind of change measurement method for distance for the horizontal broadening in mercury-cadmium tellurid detector N areas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510295755.3A CN105047574B (en) | 2015-06-02 | 2015-06-02 | A kind of change measurement method for distance for the horizontal broadening in mercury-cadmium tellurid detector N areas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105047574A true CN105047574A (en) | 2015-11-11 |
| CN105047574B CN105047574B (en) | 2017-08-25 |
Family
ID=54454019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510295755.3A Active CN105047574B (en) | 2015-06-02 | 2015-06-02 | A kind of change measurement method for distance for the horizontal broadening in mercury-cadmium tellurid detector N areas |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105047574B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107342219A (en) * | 2017-06-29 | 2017-11-10 | 中国电子科技集团公司第十研究所 | A kind of wet etching method of p-type HgCdTe composite film contact holes |
| CN109378280A (en) * | 2018-11-21 | 2019-02-22 | 中国科学院上海技术物理研究所 | A kind of test structure for high density face battle array performance verification |
| CN111403502A (en) * | 2020-03-30 | 2020-07-10 | 中国电子科技集团公司第十一研究所 | Method for preparing contact electrode of infrared detector chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1812140A (en) * | 2005-12-06 | 2006-08-02 | 淮阴师范学院 | Ion injectivity optimizing method for photovoltaic infrared detector tellerium-cadmium-mercury materials |
| CN101170150A (en) * | 2007-11-21 | 2008-04-30 | 中国科学院上海技术物理研究所 | Cleaning method for ion injection damage layer of plane Te-Cd optical voltage part |
| CN101226971A (en) * | 2008-02-01 | 2008-07-23 | 中国科学院上海技术物理研究所 | Method for reducing ion implantation damage influence of mercury cadmium telluride photovoltaic device |
| US9455369B2 (en) * | 2009-12-01 | 2016-09-27 | Selex Galileo Limited | Infra red detectors and methods of manufacturing infra red detectors using MOVPE |
-
2015
- 2015-06-02 CN CN201510295755.3A patent/CN105047574B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1812140A (en) * | 2005-12-06 | 2006-08-02 | 淮阴师范学院 | Ion injectivity optimizing method for photovoltaic infrared detector tellerium-cadmium-mercury materials |
| CN101170150A (en) * | 2007-11-21 | 2008-04-30 | 中国科学院上海技术物理研究所 | Cleaning method for ion injection damage layer of plane Te-Cd optical voltage part |
| CN101226971A (en) * | 2008-02-01 | 2008-07-23 | 中国科学院上海技术物理研究所 | Method for reducing ion implantation damage influence of mercury cadmium telluride photovoltaic device |
| US9455369B2 (en) * | 2009-12-01 | 2016-09-27 | Selex Galileo Limited | Infra red detectors and methods of manufacturing infra red detectors using MOVPE |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107342219A (en) * | 2017-06-29 | 2017-11-10 | 中国电子科技集团公司第十研究所 | A kind of wet etching method of p-type HgCdTe composite film contact holes |
| CN109378280A (en) * | 2018-11-21 | 2019-02-22 | 中国科学院上海技术物理研究所 | A kind of test structure for high density face battle array performance verification |
| CN109378280B (en) * | 2018-11-21 | 2023-09-12 | 中国科学院上海技术物理研究所 | Test structure for high-density area array performance verification |
| CN111403502A (en) * | 2020-03-30 | 2020-07-10 | 中国电子科技集团公司第十一研究所 | Method for preparing contact electrode of infrared detector chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105047574B (en) | 2017-08-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105489693B (en) | Based on the sub- device of two-dimensional layer thin-film material p g n heterojunction photovoltaics | |
| CN105047574A (en) | Spacing-variable measuring method for transverse broadening of N zone of mercury-cadmium-telluride detector | |
| CN105633215B (en) | Optimization stops the method for impurity band detector barrier layer thickness | |
| CN102460126B (en) | Material or device characterisation with non-homogeneous photoexcitation | |
| KR20180074575A (en) | High Frequency Lock-In Thermography Using Single Photon Detectors | |
| CN106482829B (en) | The dynamic of single-photon detector and static combined test system and its test method | |
| US9465069B2 (en) | Method for the extraction of recombination characteristics at metallized semiconductor surfaces | |
| Langenkamp et al. | Classification of shunting mechanisms in crystalline silicon solar cells | |
| Lemaire et al. | Open‐circuit voltage decay: moving to a flexible method of characterisation | |
| US3415992A (en) | Extended area semiconductor radiation detectors and a novel readout arrangement | |
| Buerkle et al. | Ionizing radiation detector for environmental awareness in FPGA-based flight computers | |
| CN102214723A (en) | Semiconductor radiation sensing device and manufacturing method thereof | |
| US6465857B1 (en) | Semiconductor particle detector and a method for its manufacture | |
| US3870887A (en) | Optical image position indicator means using time and phase delay sensing | |
| Ventosinos et al. | Estimation of carrier mobilities and recombination lifetime in halide perovskites films using the moving grating technique | |
| CN2938404Y (en) | Test device for measuring PN junction current | |
| US3863072A (en) | Semiconductor localization detector | |
| CN105097599B (en) | Test domain, detection structure and its detection method of a kind of leakage current | |
| Redfern et al. | Low temperature saturation of p–n junction laser beam induced current signals | |
| CN103308205B (en) | A kind of measuring method of resistance temperature measurement calorimeter | |
| CN114137022A (en) | Thermopile type heat flux density sensor | |
| Shacham‐Diamand et al. | Haynes–Shockley experiment on n‐type HgCdTe | |
| CN111898077A (en) | Method for obtaining resistance value of parallel resistor of solar cell | |
| JP2008134143A (en) | Verification structure and verification method of infrared thermal image array module | |
| Kasemann et al. | Reliable hot‐spot classification in 10 ms using ultra‐fast lock‐in thermography |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |