CN113078233A - Silicon-based field effect tube terahertz detector with high responsivity - Google Patents
Silicon-based field effect tube terahertz detector with high responsivity Download PDFInfo
- Publication number
- CN113078233A CN113078233A CN202110239270.8A CN202110239270A CN113078233A CN 113078233 A CN113078233 A CN 113078233A CN 202110239270 A CN202110239270 A CN 202110239270A CN 113078233 A CN113078233 A CN 113078233A
- Authority
- CN
- China
- Prior art keywords
- region
- parasitic
- silicon
- drain
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 28
- 239000010703 silicon Substances 0.000 title claims abstract description 28
- 230000005669 field effect Effects 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000003071 parasitic effect Effects 0.000 claims description 35
- 230000009467 reduction Effects 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 3
- 230000002141 anti-parasite Effects 0.000 abstract 1
- 239000003096 antiparasitic agent Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 31
- 230000004888 barrier function Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- ZADPBFCGQRWHPN-UHFFFAOYSA-N boronic acid Chemical compound OBO ZADPBFCGQRWHPN-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
Abstract
A silicon-based field effect tube terahertz detector with high responsivity belongs to the technical field of terahertz detection. The parasitic-reduction nested substrate comprises a working area and a parasitic-reduction area, wherein the working area is positioned above the parasitic-reduction area and is positioned between the source area and the drain area; the source region comprises a source region and a source electrode, the drain region comprises a drain region and a drain electrode, and the gate region comprises a gate oxide layer and a gate electrode. The invention adopts the anti-parasitic nested substrate, thereby effectively improving the responsivity of the detector and optimizing the performance of the device; and the method is compatible with a CMOS process, has the advantages of high integration level, low cost and mature technology, and has extremely high application value and potential.
Description
Technical Field
The invention belongs to the technical field of terahertz detection, and particularly relates to a silicon-based field effect tube terahertz detector with high responsivity.
Background
Terahertz waves generally refer to electromagnetic waves with oscillation frequency within the range of 0.1 THz-10 THz, and have important scientific research value in the fields of biomedicine, communication and the like due to the unique spectrum characteristics. Among them, the terahertz detection technology is an important part of the research in the terahertz field, has important applications in the fields of security inspection, nondestructive imaging, high-capacity data communication and the like, and has recently received general attention from researchers at home and abroad.
In the research on terahertz detectors, plasma wave type detectors have become a hot research point in the field of terahertz detectors in recent years due to the characteristics of high sensitivity, small size and operation at room temperature. The working principle of the plasma wave type detector is as follows: the terahertz wave excites a channel electronic layer in the field effect tube to form plasma wave, and the plasma wave has strong hydrodynamics nonlinearity, so that a direct current response voltage is generated at a drain end of the device under the asymmetric boundary conditions of source end coupling and drain end open circuit (or large resistor connection), and response to terahertz signals is realized.
In the plasma wave type detector, the silicon-based field effect transistor type detector has the natural advantages of low cost and high integration level due to the compatibility with the CMOS process. However, in the actual working process of the silicon-based field effect transistor detector, the parasitic capacitance existing inside the silicon-based field effect transistor detector can affect the asymmetric boundary condition of the plasma wave during working, the reaction of the plasma wave in the channel to the terahertz signal is weakened, and the responsivity of the detector is reduced.
Disclosure of Invention
The invention aims to provide a silicon-based field effect transistor terahertz detector which can inhibit parasitic capacitance and has high responsivity, aiming at the defects in the background technology.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a terahertz detector of a silicon-based field effect transistor with high responsivity is characterized by comprising a parasitical embedded substrate, a source electrode region, a drain electrode region and a grid electrode region;
the parasitic-reduction nested substrate comprises an operating region 111 and a parasitic-reduction region 110, wherein the operating region 111 is positioned above the parasitic-reduction region 110 and is positioned between a source region 120 and a drain region 130;
the source region includes a source region 120, and a source electrode 121 located above the source region 120, the source electrode and the source region forming an ohmic contact;
the drain region comprises a drain region 130 and a drain electrode 131 positioned above the drain region 130, and the drain electrode and the drain region form ohmic contact;
the gate region includes a gate oxide layer 140 and a gate electrode 141 on the gate oxide layer, and the gate oxide layer is located on the working region 111 and is adjacent to the source electrode 121 and the drain electrode 131 on the left and right, respectively.
Further, the parasitic reduction region 110 and the working region 111 are of the same doping type, and the doping concentration of the parasitic reduction region 110 is lower than that of the working region 111 by at least two orders of magnitude.
Further, the doping concentration of the working region 111 is 1017～1018cm-3。
Furthermore, the source region 120, the drain region 130, the parasitic reduction region 110, and the working region 111 are all made of silicon or germanium.
Further, the material of the gate oxide layer 140 is silicon dioxide or hafnium oxide.
Further, the material of the source electrode 121 and the drain electrode 131 may be Al, Au, or Ag; the gate electrode 141 is made of polysilicon, Al, Au, or Ag.
The working principle of the invention is as follows:
according to the silicon-based field effect tube terahertz detector with high responsivity, the parasitic reduction nested substrate is adopted, and the highly doped working area in the parasitic reduction nested substrate enables a plasma wave formed by a channel electronic layer to generate sensitive reaction on a terahertz signal when the detector works. Meanwhile, the parasitic barrier capacitance formed by the source drain region and the substrate is effectively reduced by the low-doped parasitic reduction region, the unnecessary charging and discharging phenomenon of the terahertz signal to the substrate parasitic capacitance is inhibited, the boundary condition of the plasma wave during working is improved, the terahertz signal is fully acted on the plasma wave in the channel layer, and the responsivity of the detector is effectively improved.
Compared with the prior art, the invention has the beneficial effects that:
according to the silicon-based field effect tube terahertz detector with high responsivity, the parasitic-reduction nested substrate is adopted, the responsivity of the detector is effectively improved, and the performance of a device is optimized; and the method is compatible with a CMOS process, has the advantages of high integration level, low cost and mature technology, and has extremely high application value and potential.
Drawings
FIG. 1 is a schematic structural diagram of a high-responsivity silicon-based field effect tube terahertz detector obtained in an embodiment of the invention in a front view;
FIG. 2 is a schematic structural diagram of a terahertz detector of a silicon-based field effect transistor based on a traditional structure, obtained by comparison in the invention;
FIG. 3 is a graph comparing responsivity versus gate voltage curves of terahertz detectors obtained by the embodiment of the invention and the comparative example in operation;
fig. 4 is a graph comparing potential barrier (parasitic) capacitance-gate voltage curves formed by a source region and a substrate under the working conditions of the terahertz detector obtained in the embodiment of the invention and the terahertz detector obtained in the comparative example;
FIG. 5 is a graph comparing potential barrier (parasitic) capacitance formed by a drain region and a substrate with a gate voltage curve under the working conditions of the terahertz detector obtained in the embodiment of the invention and the terahertz detector obtained in the comparative example;
FIG. 6 is a response curve of a terahertz detector obtained in example of the present invention and comparative example 1 in relation to frequency under operating conditions;
fig. 7 is a relationship curve of responsivity and terahertz signal amplitude when the terahertz detectors obtained in the embodiment of the present invention and the comparative example 1 work.
Detailed Description
The technical scheme of the invention is detailed below by combining the accompanying drawings and the embodiment.
Examples
FIG. 1 is a schematic structural diagram of a high-responsivity silicon-based field effect tube terahertz detector obtained in an embodiment of the invention in a front view; the transistor comprises a parasitic reduction region 110, a working region 111, a source region 120, a source electrode 121, a drain region 130, a drain electrode 131, a gate oxide layer 140 and a gate electrode 141 which are arranged from bottom to top in sequence. The parasitic reduction embedded substrate is formed by the parasitic reduction area 110 and the working area 111 and is made of silicon; the parasitic reduction region 110 is doped with P-type boron with a doping concentration of 1016cm-3The length is 500nm and the thickness is 1 μm; the working region 111 is doped with P-type boronAt a concentration of 1018cm-3The length is 300nm and the thickness is 100 nm; the source region 120 and the drain region 130 are made of silicon and doped with N-type arsenic with a doping concentration of 1020cm-3The length is 100nm and the thickness is 100 nm; the gate oxide layer is made of silicon dioxide, is positioned on the upper surface of the working area, and has the thickness of 1nm and the length of 300 nm; the source electrode 121 and the drain electrode 131 are made of metal aluminum and have the thickness of 10nm, the source electrode 121 is positioned above the source region 120 to form ohmic contact, and the drain electrode 131 is positioned above the drain region 130 to form ohmic contact; the gate electrode 141 is made of polysilicon and has a thickness of 10nm, and is located on the gate oxide layer 140.
Comparative example
FIG. 2 is a schematic structural diagram of a terahertz detector of a silicon-based field effect transistor based on a traditional structure, obtained by comparison in the invention; the device comprises a substrate region 210, a source region 220, a source electrode 221, a drain region 230, a drain electrode 231, a gate oxide layer 240 and a gate electrode 241.
Comparative example 1: the substrate region 210 is made of silicon and doped with P-type boron with a doping concentration of 1018cm-3The length is 500nm and the thickness is 1 μm; the source region 220 and the drain region 230 are made of silicon and doped with N-type arsenic with a doping concentration of 1020cm-3The length is 100nm and the thickness is 100 nm; the gate oxide layer 240 is made of silicon dioxide, covers between the source electrode and the drain electrode, and has the length of 300nm and the thickness of 1 nm; the source electrode 221 and the drain electrode 231 are made of metal aluminum and have the thickness of 10nm, the source electrode 221 is positioned above the source region 220 to form ohmic contact, and the drain electrode 231 is positioned above the drain region 230 to form ohmic contact; the gate electrode 241 is made of polysilicon with a thickness of 10nm and is located on the gate oxide layer 240.
Comparative example 2: the substrate region 210 is made of silicon and doped with P-type boron with a doping concentration of 1016cm-3The length is 500nm and the thickness is 1 μm; the source region 220 and the drain region 230 are made of silicon and doped with N-type arsenic with a doping concentration of 1020cm-3The length is 100nm and the thickness is 100 nm; the gate oxide layer 240 is made of silicon dioxide, covers between the source electrode and the drain electrode, and has the length of 300nm and the thickness of 1 nm; the source electrode 221 and the drain electrode 231 are made of metal aluminum and have a thickness of 10nm, and the source electrode 221 is located above the source region 220Forming an ohmic contact, wherein the drain electrode 231 is positioned above the drain region 230 to form an ohmic contact; the gate electrode 241 is made of polysilicon with a thickness of 10nm and is located on the gate oxide layer 240.
FIG. 3 is a graph comparing responsivity-gate voltage curves of terahertz detectors obtained in the example of the invention, the comparative example 1 (comparative example of doping a substrate with a working region) and the comparative example 2 (comparative example of doping a substrate with a parasitic region) in operation; the signal received by the device in the practical application process is simulated by adopting the sine wave terahertz signal with the amplitude of 1mV and the frequency of 700GHz, and the sine wave terahertz signal is applied to the grid electrode of the detector, so that the terahertz detector in the embodiment has the responsivity improved by more than 30% compared with that of a comparative detector. Comparison of the example with a substrate and working region doping comparative example (comparative example 1) shows that the introduction of the parasitic reduction nested substrate leads to performance improvement of a detector adopting the structure of the invention. In addition, the responsivity curve of the substrate and the doping comparative example of the parasitic reduction region (comparative example 2) and the embodiment is combined to show that the existence of the working region in the parasitic reduction nested substrate enables plasma waves generated in a channel to sensitively react to terahertz signals, and if only the existence of the parasitic reduction region (namely the doping comparative example of the substrate and the parasitic reduction region) is adopted in the embodiment, the responsivity is not improved, but is deteriorated.
Fig. 4 is a graph comparing potential barrier (parasitic) capacitance-gate voltage curves formed by a source region and a substrate under the working conditions of the terahertz detectors obtained in the embodiment of the present invention, the comparative example 1 (comparative example for doping a substrate with a working region) and the comparative example 2 (comparative example for doping a substrate with a parasitic region); as can be seen, the barrier capacitance of the source region and the substrate of the embodiment is slightly lower than that of the substrate and the parasitic region doping comparison example, and is reduced by about 50% compared with that of the substrate and the working region doping comparison example. The low-doped parasitic reduction region in the parasitic reduction nested substrate can effectively reduce parasitic barrier capacitance formed by the source region and the substrate, so that the working condition of plasma waves in the detector during working is improved, and the improvement of responsivity is obtained.
Fig. 5 is a graph comparing potential barrier (parasitic) capacitance-gate voltage curves formed by a drain region and a substrate under the working conditions of the terahertz detectors obtained in the embodiment of the invention, the comparative example 1 (comparative example of doping a substrate with a working region) and the comparative example 2 (comparative example of doping a substrate with a parasitic reduction region); as can be seen, the barrier capacitance of the drain region and the substrate of the embodiment is slightly lower than that of the substrate and the parasitic region doping comparative example, and is reduced by about 50% compared with that of the substrate and the working region doping comparative example. The parasitic barrier capacitance formed by the drain region and the substrate can be effectively reduced by the low-doped parasitic reduction region in the parasitic reduction nested substrate, so that the working condition of plasma waves in the detector during working is improved, and the improvement of the responsivity is obtained.
FIG. 6 is a response curve of a terahertz detector obtained in example of the present invention and comparative example 1 in relation to frequency under operating conditions; fig. 7 is a relationship curve of responsivity and terahertz signal amplitude when the terahertz detectors obtained in the embodiment of the present invention and the comparative example 1 work. As can be seen from FIGS. 6 and 7, under the condition of applying the terahertz signal excitation with the amplitude of 1mV, the responsivity of the detector of comparative example 1 at 300 GHz-1 THz is 5.09 μ V-6.83 μ V, and the responsivity of the detector of example at 300 GHz-1 THz is 8.51 μ V-8.18 μ V.
Claims (6)
1. A terahertz detector of a silicon-based field effect transistor with high responsivity is characterized by comprising a parasitical embedded substrate, a source electrode region, a drain electrode region and a grid electrode region;
the parasitic-reduction nested substrate comprises a working region (111) and a parasitic-reduction region (110), wherein the working region (111) is positioned above the parasitic-reduction region (110) and is positioned between a source region (120) and a drain region (130);
the source region comprises a source region (120) and a source electrode (121) positioned above the source region (120);
the drain region comprises a drain region (130) and a drain electrode (131) positioned above the drain region (130);
the grid region comprises a grid oxide layer (140) and a grid electrode (141) positioned on the grid oxide layer, wherein the grid oxide layer is positioned on the working region (111) and is respectively adjacent to the source electrode (121) and the drain electrode (131) on the left and the right.
2. A thz detector according to claim 1, wherein the parasitical region and the active region are of the same doping type, and the doping concentration of the parasitical region is at least two orders of magnitude lower than that of the active region.
3. The terahertz detector of the silicon-based field effect transistor with high responsivity of claim 2, wherein the doping concentration of the working region is 1017～1018cm-3。
4. The terahertz detector of the silicon-based field effect transistor with high responsivity of claim 1, wherein the source region, the drain region, the parasitic reduction region and the working region are made of silicon or germanium.
5. The terahertz detector for the silicon-based field effect transistor with the high responsivity, according to claim 1, is characterized in that the material of the gate oxide layer is silicon dioxide or hafnium oxide.
6. The terahertz detector of the silicon-based field effect transistor with high responsivity of claim 1, wherein the source electrode and the drain electrode are made of Al, Au or Ag; the gate electrode is made of polysilicon, Al, Au or Ag.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110239270.8A CN113078233A (en) | 2021-03-04 | 2021-03-04 | Silicon-based field effect tube terahertz detector with high responsivity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110239270.8A CN113078233A (en) | 2021-03-04 | 2021-03-04 | Silicon-based field effect tube terahertz detector with high responsivity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113078233A true CN113078233A (en) | 2021-07-06 |
Family
ID=76609886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110239270.8A Pending CN113078233A (en) | 2021-03-04 | 2021-03-04 | Silicon-based field effect tube terahertz detector with high responsivity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113078233A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116741869A (en) * | 2023-05-23 | 2023-09-12 | 苏州科技大学 | Device for improving responsivity of terahertz detector |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030205765A1 (en) * | 2000-04-03 | 2003-11-06 | Nec Corporation | Semiconductor device and method for manufacturing the same |
| CN202513189U (en) * | 2012-03-20 | 2012-10-31 | 深圳信息职业技术学院 | Photoelectric detector, optoelectronic integrated circuit and optical communication system |
| CN105633215A (en) * | 2016-03-04 | 2016-06-01 | 中国电子科技集团公司第五十研究所 | Method for optimizing thickness of baffle layer of blocking impurity band detector |
| CN112436071A (en) * | 2020-11-02 | 2021-03-02 | 天津大学 | Silicon-based grating grid terahertz detector based on frequency selective surface |
-
2021
- 2021-03-04 CN CN202110239270.8A patent/CN113078233A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030205765A1 (en) * | 2000-04-03 | 2003-11-06 | Nec Corporation | Semiconductor device and method for manufacturing the same |
| CN202513189U (en) * | 2012-03-20 | 2012-10-31 | 深圳信息职业技术学院 | Photoelectric detector, optoelectronic integrated circuit and optical communication system |
| CN105633215A (en) * | 2016-03-04 | 2016-06-01 | 中国电子科技集团公司第五十研究所 | Method for optimizing thickness of baffle layer of blocking impurity band detector |
| CN112436071A (en) * | 2020-11-02 | 2021-03-02 | 天津大学 | Silicon-based grating grid terahertz detector based on frequency selective surface |
Non-Patent Citations (2)
| Title |
|---|
| Z.LIU等: "A CMOS Fully Integrated 860-GHz Terahertz Sensor", 《IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY 》 * |
| Z.Y.LIU等: "Design of 1-THz field effect transistor detectors in 180-nm standard CMOS process", 《PROC.OF SPIE》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116741869A (en) * | 2023-05-23 | 2023-09-12 | 苏州科技大学 | Device for improving responsivity of terahertz detector |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Feldmann et al. | Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics | |
| CN103021492B (en) | The manufacture method of silit horizontal PIN type minisize nuclear battery | |
| Liebhaber et al. | Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub) oxides (a-SiOx: H, 0< x< 2) | |
| CN103400888A (en) | High-gain AlGaN ultraviolet avalanche photodetector and preparation method thereof | |
| CN106711275B (en) | A kind of semiconductor photosensor | |
| CN113078233A (en) | Silicon-based field effect tube terahertz detector with high responsivity | |
| Litvinenko et al. | Concept of photovoltaic transducer on a base of modified p–n junction solar cell | |
| Deng et al. | Band alignment and electrical properties of NiO/β-Ga2O3 heterojunctions with different β-Ga2O3 orientations | |
| CN103489937B (en) | Asymmetrical channel quantum dot field effect photon detector | |
| CN107452820A (en) | A kind of homogeneity interface two dimension δ doping type PIN ultraviolet detectors | |
| Yang et al. | The role of front-surface charges in interdigitated back contact silicon heterojunction solar cells | |
| Chen et al. | Comprehensive analysis of optoelectronic performance of ultraviolet phototransistors based on AlGaN/GaN heterostructure | |
| CN103033276B (en) | Silicon carbide (SIC) temperature sensor and manufacturing method thereof | |
| CN108054180A (en) | A kind of charge coupling device based on graphene/insulating layer/semiconductor structure | |
| CN105140277B (en) | A kind of Terahertz sensor based on tunneling transistor arrangement | |
| Kopfer et al. | Capacitance–voltage characterization of silicon oxide and silicon nitride coatings as passivation layers for crystalline silicon solar cells and investigation of their stability against x-radiation | |
| CN109686810A (en) | Side grid field effect transistor terahertz detector and preparation method thereof | |
| Lu et al. | High-responsivity molybdenum diselenide photodetector with dirac electrodes | |
| CN108152336A (en) | A kind of two-dimensional material source follower with gas sensing | |
| CN208738250U (en) | Display panel | |
| Jiang et al. | Scanning capacitance spectroscopy on n+-p asymmetrical junctions in multicrystalline Si solar cells | |
| CN106876421A (en) | A kind of semiconductor photosensor based on Dynamic Coupling effect and preparation method thereof | |
| CN107240616B (en) | InGaAs/InP photistor infrared detectors with intrinsic layer structure | |
| Troeger et al. | Al2O3-TiOx as full area passivating contacts for silicon surfaces utilizing oxygen scavenging titanium interlayers | |
| CN106449768B (en) | A kind of JFET pipe |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210706 |