CN116741869A - Device for improving responsivity of terahertz detector - Google Patents
Device for improving responsivity of terahertz detector Download PDFInfo
- Publication number
- CN116741869A CN116741869A CN202310584822.8A CN202310584822A CN116741869A CN 116741869 A CN116741869 A CN 116741869A CN 202310584822 A CN202310584822 A CN 202310584822A CN 116741869 A CN116741869 A CN 116741869A
- Authority
- CN
- China
- Prior art keywords
- ohmic contact
- layer
- gan
- responsivity
- contact layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000006911 nucleation Effects 0.000 claims abstract description 16
- 238000010899 nucleation Methods 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 230000002708 enhancing effect Effects 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 3
- 230000033228 biological regulation Effects 0.000 abstract description 2
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of electronic devices, in particular to a device for improving the responsivity of a terahertz detector, which comprises a substrate, wherein an AlN nucleation layer is arranged on the substrate, and a first n is arranged on the AlN nucleation layer + GaN ohmic contact layer as source and drain of device, at the first n + The GaN ohmic contact layer is an InAlN electron emission layer which is epitaxially grown, and n is epitaxially grown on the InAlN electron emission layer ‑ GaN active layer and second n + GaN ohmic contact layer forming grid electrode of device, first n + A fin electron gas channel penetrates through the GaN ohmic contact layer, grows from the substrate and penetrates through the grid electrode to be connected with the source electrode and the drain electrode; the device provided by the invention realizes the three-dimensional regulation and control of the grid electrode on the two-dimensional electron gas, so that the modulation capability of the grid electrode on a channel is enhanced, the length of the grid electrode is reduced, and the response speed of the device to terahertz waves is improved.
Description
Technical Field
The invention relates to the technical field of electronic devices, in particular to a device for improving the responsivity of a terahertz detector.
Background
Terahertz waves refer to electromagnetic waves with frequencies ranging from 0.1THz to 10THz, corresponding to frequency bands. Terahertz science is science that researches terahertz waves, which can penetrate many things. Terahertz was related to the field of infrared astronomy research for century ago, but has not received wide attention in scientific research and civil use.
Whereas terahertz waves have many advantageous characteristics not possessed by electromagnetic waves of other frequency bands, their broad and attractive development prospects are also due to the fact that several basic characteristics thereof are as follows:
(1) The terahertz wave has high penetrability and good penetrability to most of nonpolar substances, so that the terahertz wave can be used for scanning opaque objects, can be used for perspective imaging, and can effectively solve some problems existing in X-ray and ultrasonic imaging technologies at present. In the case of rescue at a fire scene, communication on a chaotic battlefield, or the like, terahertz waves can be transmitted with low loss in such an environment by virtue of their penetration, and thus can have potential development advantages.
(2) The bandwidth is very wide, so that a large amount of physical and chemical information is covered in the terahertz wave band, and for most polar molecules and biological macromolecules, the vibration frequency of the polar molecules and biological macromolecules is in the terahertz wave band range, so that the terahertz waves can be used for detecting the composition components of objects and distinguishing the physical and chemical characteristics of the objects.
(3) The terahertz wave is used for detecting substances with a high safety coefficient, because the quantum energy and the blackbody temperature are very low compared with electromagnetic waves in other wave bands, and the integrity of the substances can be well maintained in the detection process.
(4) The pulse period is short, and a typical terahertz pulse has a pulse width in the picosecond order, so that terahertz waves can be used for distinguishing time and sampling techniques. Meanwhile, the signal-to-noise ratio of the terahertz wave is higher than that of the far infrared pulse by several orders of magnitude, so that the terahertz wave has a certain inhibition effect on the far infrared background noise.
(5) The terahertz wave has good directivity, so that the terahertz wave is often used for short-distance communication in war so as to ensure the stability and reliability of the direction in the information transmission process and prevent the information from leaking.
Terahertz technology has been hindered in development, and the main difficulty is that effective detectors and emission sources are not available.
In recent years, with the rapid development of wireless communication, the demand for microwave power amplifiers for wireless communication systems has further increased. Heterojunction based devices are becoming increasingly popular. With the improvement of the process technology, the performance of the device is greatly improved.
Field Effect Transistors (FETs) are widely used in integrated chips. The FET includes a source, a drain, and a gate. By applying a bias to the gate, the current between the source and drain can be controlled. When the transistor is within a sub-threshold region (i.e., for gate-source voltages below the threshold voltage), the sub-threshold drain current of the FET is the current flowing between the source and drain of the FET. Since a large subthreshold slope improves the ratio between on-current and off-current, a large subthreshold slope (i.e., a small subthreshold swing) is generally desirable, and thus leakage current is reduced. Therefore, the improvement of the FET device can be based, so that the problem of improving the response speed of the terahertz detector is realized.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a device for improving the responsivity of the terahertz detector, and the response speed of the terahertz detector is further improved based on the improvement of the FET.
In order to solve the problems, the invention adopts the following technical scheme:
a device for improving the responsivity of a terahertz detector comprises a substrate, wherein an AlN nucleation layer is arranged on the substrate, and the thickness is 30-50nm;
on AlN nucleation layer is first n + GaN ohmic contact layer with thickness of 0.5-1.5 μm and doping concentration of 1-2 x 10 18 cm -3 Depositing metal Ti/Al/Ni/Au to form ohmic contact as a source electrode and a drain electrode of the device;
at the first n + An InAlN electron emission layer which grows epitaxially is arranged on the GaN ohmic contact layer, the thickness is 80-200nm, and the in component is 14% -22%;
epitaxially growing a doping concentration of 0.5-2 x 10 on the InAlN electron emission layer 17 cm -3 N with thickness of 0.5-2 μm - GaN active layer and second n + A GaN ohmic contact layer;
at the second n + Depositing metal Ti/Al/Ni/Au and n on GaN ohmic contact layer + GaN forms ohmic contact to form a grid electrode of the device;
first n + The GaN ohmic contact layer is penetrated out of a fin-type electron gas channel which grows from the substrate, penetrates through the grid electrode, is connected with the source electrode and the drain electrode, and is positioned below the deposited metal Ti/Al/Ni/Au.
As one implementation manner, the fin-type electron gas channel is a quadrangular prism, the bottom is gradually narrowed from the top to the bottom, and the area of the top is not less than 50% of the area of the top of the grid electrode; and the width of the top of the fin-type electron gas channel is less than or equal to 15 mu m.
As one embodiment, the fin electron gas channel includes a first opposing cylindrical surface and a second opposing cylindrical surface that are inclined at equal angles.
As one embodiment, the AlN nucleation layer has a thickness of 30-50nm and a length of 25-35 μm.
As an embodiment, the first n + The GaN ohmic contact layer has a thickness of 0.5-1.5 μm and a doping concentration of 1-2 x 10 18 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The second n + The GaN ohmic contact layer has a thickness of 100-400nm and a doping concentration of 1-2 x 10 18 cm -3 。
As one implementation mode, the substrate is a SiC substrate, and the thickness is 150-300 mu m.
As one embodiment, the gate length is 10-15 μm and the thickness of the deposited metal Ti/Al/Ni/Au is 30nm/120nm/50nm/160nm.
As one embodiment, the device has a length of 40-60 μm and a width of 25-35 μm.
As one embodiment, the InAlN electron emission layer, n - GaN active layer and second n + The GaN ohmic contact layer has a length of 10-15 μm.
As an embodiment, what is providedThe first n + The length of the part 100-300nm below the upper surface of the GaN ohmic contact layer is 10-15 μm, and the length of the other part is 25-35 μm.
The invention has the beneficial effects that: according to the device for improving the responsivity of the terahertz detector, based on the relevant characteristics of the InAlN material, the InAlN/GaN heterojunction is formed with the GaN material, a non-mismatched heterojunction interface can be formed with GaN, and the FET device structure is adopted, so that the three-dimensional regulation and control of the grid electrode on two-dimensional electron gas are realized, the capacity of modulating the channel by the grid electrode is enhanced, the length of the grid electrode is reduced, the speed of the device responding to terahertz waves is improved, and the integration level of the device is also improved.
Drawings
Fig. 1 is a schematic structural diagram of a device for improving the responsivity of a terahertz detector.
Detailed Description
The present invention will be described in further detail with reference to specific examples.
It should be noted that these examples are only for illustrating the present invention, and not for limiting the present invention, and simple modifications of the method under the premise of the inventive concept are all within the scope of the claimed invention.
Referring to fig. 1, the device for improving the responsivity of the terahertz detector comprises a substrate, wherein an AlN nucleation layer is arranged on the substrate, and the thickness is 30-50nm;
on AlN nucleation layer is first n + GaN ohmic contact layer with thickness of 0.5-1.5 μm and doping concentration of 1-2 x 10 18 cm -3 Depositing metal to form ohmic contact as the source electrode and the drain electrode of the device;
at the first n + An InAlN electron emission layer which grows epitaxially is arranged on the GaN ohmic contact layer, the thickness is 80-200nm, and the in component is 14% -22%;
epitaxially growing a doping concentration of 0.5-2 x 10 on the InAlN electron emission layer 17 cm -3 N with thickness of 0.5-2 μm - GaN active layer and second n + A GaN ohmic contact layer;
at the second n + Deposition of metal on GaN ohmic contact layerTi/Al/Ni/Au, and n + GaN forms ohmic contact to form a grid electrode of the device;
first n + The GaN ohmic contact layer is penetrated out of a fin-type electron gas channel which grows from the substrate, penetrates through the grid electrode, is connected with the source electrode and the drain electrode, and is positioned below the deposited metal Ti/Al/Ni/Au.
As one implementation manner, the fin-type electron gas channel is a quadrangular prism, and is arranged in a manner of gradually narrowing from bottom to top, and the area of the top is not less than 50% of that of the top of the grid electrode.
As one embodiment, the fin electron gas channel includes a first opposing cylindrical surface and a second opposing cylindrical surface that are inclined at equal angles.
As one embodiment, the AlN nucleation layer has a thickness of 30-50nm and a length of 25-35 μm.
As an embodiment, the first n + The GaN ohmic contact layer has a thickness of 0.5-1.5 μm and a doping concentration of 1-2 x 10 18 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The second n + The GaN ohmic contact layer has a thickness of 100-400nm and a doping concentration of 1-2 x 10 18 cm -3 。
As one implementation mode, the substrate is a SiC substrate, and the thickness is 150-300 mu m.
As one embodiment, the gate length is 10-15 μm and the thickness of the deposited metal Ti/Al/Ni/Au is 30nm/120nm/50nm/160nm.
As one embodiment, the device has a length of 40-60 μm and a width of 25-35 μm.
As one embodiment, the InAlN electron emission layer, n - GaN active layer and second n + The GaN ohmic contact layer has a length of 10-15 μm.
As an embodiment, the first n + The length of the part 100-300nm below the upper surface of the GaN ohmic contact layer is 10-15 μm, and the length of the other part is 25-35 μm.
The manufacturing process is as follows:
selecting a SiC substrate, reserving a fin type electronic air channelChannel, fin electron gas channel height is based on AlN nucleation layer, first n + GaN ohmic contact layer, inAlN electron emission layer, n - GaN active layer, second n + The whole height of the GaN ohmic contact layer is reserved, the width of the fin electron gas channel is 25-35 mu m consistent with that of the AlN nucleation layer, the length of the SiC substrate is 40-60 mu m, the width is 25-35 mu m, and the thickness is 30-50nm.
The fin-type electron gas channel is integrally a quadrangular prism, the bottom of the fin-type electron gas channel is gradually narrowed from the bottom to the top, and the area of the top of the fin-type electron gas channel is not less than 50% of the area of the top of the grid electrode; the width of the top of the fin-type electron gas channel is less than or equal to 15 mu m; the first and second opposing cylindrical surfaces of the fin electron gas channel are inclined together at equal angles.
An AlN nucleation layer grows on the SiC substrate, the length is 25-35 mu m, the thickness can be 30-50nm, the width is flush with the SiC substrate, and an MOCVD process is adopted to adopt trimethylaluminum and nitrogen as an aluminum source and a nitrogen source. Then growing a first n on the AlN nucleation layer by adopting an MOCVD process and using triethyl gallium and nitrogen as a gallium source and a nitrogen source + GaN ohmic contact layer adopts silane as n-type doping with doping concentration of 1-2 x 10 18 cm -3 First n + The whole thickness of the GaN ohmic contact layer is 0.5-1.5 mu m, metal Ti/Al/Ni/Au is deposited to form ohmic contact, and a source electrode and a drain electrode of the device are formed and connected with the fin-type electron gas channel. At the first n + On the GaN ohmic contact layer, an InAlN electron emission layer is epitaxially grown, the In component is 14% -22%, PMOCVD is adopted, trimethylaluminum, trimethylgallium, trimethylindium and ammonia gas are introduced In a pulse mode, so that III-group atoms have time to move on the surface before being combined with N atoms, trimethylaluminum and trimethylindium are introduced at different moments, the competition of Al atoms and In atoms on the N atoms can be avoided, and the crystallization quality of the material is improved. Epitaxially growing a layer with doping concentration of 0.5-2 x 10 on the InAlN electron emission layer by adopting MOCVD process 17 cm -3 Thickness of 0.5-2 mu mn - GaN active layer, gallium source and nitrogen source are triethyl gallium and nitrogen, silane gas is n-type doping source, flow of silane gas is changed, and regrowth doping concentration is 1-2 x 10 18 cm -3 Thickness of 100-Second n of 400nm + And a GaN ohmic contact layer. At the second n + Depositing metal Ti/Al/Ni/Au and n on GaN ohmic contact layer + GaN forms an ohmic contact and forms the gate of the device. The process of the epitaxial layer needing to be subjected to photo etching adopts a reactive ion RIE method and uses BCl 3 /Cl 3 And etching the GaN epitaxial layer by using an etching gas source. And carrying out rapid annealing treatment on the whole device in an argon atmosphere, so that the deposited metal and GaN form good ohmic contact.
Finally, it is noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be understood that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. The device for improving the responsivity of the terahertz detector is characterized by comprising a substrate, wherein an AlN nucleation layer is arranged on the substrate, and the thickness of the AlN nucleation layer is 30-50nm;
on AlN nucleation layer is first n + GaN ohmic contact layer with thickness of 0.5-1.5 μm and doping concentration of 1-2 x 10 18 cm -3 Depositing metal Ti/Al/Ni/Au to form ohmic contact as a source electrode and a drain electrode of the device;
at the first n + An InAlN electron emission layer which grows epitaxially is arranged on the GaN ohmic contact layer, the thickness is 80-200nm, and the in component is 14% -22%;
epitaxially growing a doping concentration of 0.5-2 x 10 on the InAlN electron emission layer 17 cm -3 N with thickness of 0.5-2 μm - GaN active layer and second n + A GaN ohmic contact layer;
at the second n + Depositing metal Ti/Al/Ni/Au and n on GaN ohmic contact layer + GaN forms ohmic contact to form a grid electrode of the device;
first n + The GaN ohmic contact layer is penetrated out of a fin-type electron gas channel which grows from the substrate, penetrates through the grid electrode, is connected with the source electrode and the drain electrode and is positionedUnder the deposited metal Ti/Al/Ni/Au.
2. The device for improving the responsivity of a terahertz detector according to claim 1, wherein the fin-shaped electron gas channel is a quadrangular prism, and is arranged in a manner that the bottom is gradually narrowed from the top, and the area of the top is not less than 50% of the area of the top of the grid electrode; and the width of the top of the fin-type electron gas channel is less than or equal to 15 mu m.
3. The device for improving the responsivity of a terahertz detector of claim 2, wherein the fin electron gas channel comprises a first opposing cylindrical surface and a second opposing cylindrical surface, the first opposing cylindrical surface and the second opposing cylindrical surface being inclined together at an equal angle.
4. The terahertz detector responsivity enhancing device according to claim 1, wherein the AlN nucleation layer has a thickness of 30-50nm and a length of 25-35 μm.
5. The terahertz detector responsivity-enhancing device of claim 1, wherein the first n + The GaN ohmic contact layer has a thickness of 0.5-1.5 μm and a doping concentration of 1-2 x 10 18 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The second n + The GaN ohmic contact layer has a thickness of 100-400nm and a doping concentration of 1-2 x 10 18 cm -3 。
6. The device for improving the responsivity of a terahertz detector according to claim 1, wherein the substrate is a SiC substrate with a thickness of 150-300 μm.
7. The device for improving the responsivity of a terahertz detector according to claim 1, wherein the gate length is 10-15 μm and the thickness of the deposited metal Ti/Al/Ni/Au is 30nm/120nm/50nm/160nm.
8. The device for improving the responsivity of a terahertz detector according to claim 1, wherein the device has a length of 40-60 μm and a width of 25-35 μm.
9. The terahertz detector responsivity-enhancing device of claim 1, wherein the InAlN electron emitting layer, n - GaN active layer and second n + The GaN ohmic contact layer has a length of 10-15 μm.
10. The terahertz detector responsivity-enhancing device of claim 1, wherein the first n + The length of the part 100-300nm below the upper surface of the GaN ohmic contact layer is 10-15 μm, and the length of the other part is 25-35 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310584822.8A CN116741869A (en) | 2023-05-23 | 2023-05-23 | Device for improving responsivity of terahertz detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310584822.8A CN116741869A (en) | 2023-05-23 | 2023-05-23 | Device for improving responsivity of terahertz detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116741869A true CN116741869A (en) | 2023-09-12 |
Family
ID=87916057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310584822.8A Pending CN116741869A (en) | 2023-05-23 | 2023-05-23 | Device for improving responsivity of terahertz detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116741869A (en) |
Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050133816A1 (en) * | 2003-12-19 | 2005-06-23 | Zhaoyang Fan | III-nitride quantum-well field effect transistors |
| CN101478006A (en) * | 2009-01-19 | 2009-07-08 | 西安电子科技大学 | Terahertz GaN Gunn diode based on conducting type SiC substrate and manufacturing process thereof |
| CN102522502A (en) * | 2012-01-10 | 2012-06-27 | 西安电子科技大学 | Terahertz GaN Gunn diode based on SiC substrate and manufacturing method thereof |
| US20130307027A1 (en) * | 2012-04-12 | 2013-11-21 | Jing Lu | Method for heteroepitaxial growth of high channel conductivity and high breakdown voltage nitrogen polar high electron mobility transistors |
| CN104051520A (en) * | 2013-03-15 | 2014-09-17 | 半导体元件工业有限责任公司 | High electron mobility semiconductor device and manufacturing method therefor |
| CN104465913A (en) * | 2014-11-26 | 2015-03-25 | 西安电子科技大学 | Resonance tunneling diode with double InGaN sub quantum wells and manufacturing method thereof |
| CN105355657A (en) * | 2015-11-27 | 2016-02-24 | 西安电子科技大学 | Insulated gate AlGaN/GaN high electron mobility transistor with multi-channel fin structure |
| CN105514176A (en) * | 2016-01-05 | 2016-04-20 | 扬州海科电子科技有限公司 | Terahertz GaN Gunn diode and manufacturing method thereof |
| CN105932041A (en) * | 2016-05-06 | 2016-09-07 | 西安电子科技大学 | N-face GaN-based fin high electron mobility transistor and manufacturing method |
| CN107516667A (en) * | 2017-08-24 | 2017-12-26 | 北京华进创威电子有限公司 | A kind of the GaN HEMT structure cells and device of more Two-dimensional electron gas channels |
| CN107527952A (en) * | 2017-08-28 | 2017-12-29 | 电子科技大学 | A kind of multilayer anode diode of Nano Fin grid structures |
| US20200220036A1 (en) * | 2019-01-08 | 2020-07-09 | Analog Devices, Inc | Semiconductor photodetector assembly |
| CN112531071A (en) * | 2020-12-18 | 2021-03-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz field effect detector based on thin barrier material and design method thereof |
| CN113078233A (en) * | 2021-03-04 | 2021-07-06 | 电子科技大学 | Silicon-based field effect tube terahertz detector with high responsivity |
| CN114361032A (en) * | 2021-11-23 | 2022-04-15 | 西安电子科技大学 | Low-contact-resistance GaN-based device and manufacturing method thereof |
| CN114864737A (en) * | 2022-04-13 | 2022-08-05 | 西安电子科技大学广州研究院 | Terahertz detector based on GaN MIS-HEMT structure and preparation method thereof |
| CN115274851A (en) * | 2022-07-01 | 2022-11-01 | 西安电子科技大学 | Enhanced radio frequency device based on P-GaN cap layer and Fin structure and preparation method thereof |
-
2023
- 2023-05-23 CN CN202310584822.8A patent/CN116741869A/en active Pending
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050133816A1 (en) * | 2003-12-19 | 2005-06-23 | Zhaoyang Fan | III-nitride quantum-well field effect transistors |
| CN101478006A (en) * | 2009-01-19 | 2009-07-08 | 西安电子科技大学 | Terahertz GaN Gunn diode based on conducting type SiC substrate and manufacturing process thereof |
| CN102522502A (en) * | 2012-01-10 | 2012-06-27 | 西安电子科技大学 | Terahertz GaN Gunn diode based on SiC substrate and manufacturing method thereof |
| US20130307027A1 (en) * | 2012-04-12 | 2013-11-21 | Jing Lu | Method for heteroepitaxial growth of high channel conductivity and high breakdown voltage nitrogen polar high electron mobility transistors |
| CN104051520A (en) * | 2013-03-15 | 2014-09-17 | 半导体元件工业有限责任公司 | High electron mobility semiconductor device and manufacturing method therefor |
| CN104465913A (en) * | 2014-11-26 | 2015-03-25 | 西安电子科技大学 | Resonance tunneling diode with double InGaN sub quantum wells and manufacturing method thereof |
| CN105355657A (en) * | 2015-11-27 | 2016-02-24 | 西安电子科技大学 | Insulated gate AlGaN/GaN high electron mobility transistor with multi-channel fin structure |
| CN105514176A (en) * | 2016-01-05 | 2016-04-20 | 扬州海科电子科技有限公司 | Terahertz GaN Gunn diode and manufacturing method thereof |
| CN105932041A (en) * | 2016-05-06 | 2016-09-07 | 西安电子科技大学 | N-face GaN-based fin high electron mobility transistor and manufacturing method |
| CN107516667A (en) * | 2017-08-24 | 2017-12-26 | 北京华进创威电子有限公司 | A kind of the GaN HEMT structure cells and device of more Two-dimensional electron gas channels |
| CN107527952A (en) * | 2017-08-28 | 2017-12-29 | 电子科技大学 | A kind of multilayer anode diode of Nano Fin grid structures |
| US20200220036A1 (en) * | 2019-01-08 | 2020-07-09 | Analog Devices, Inc | Semiconductor photodetector assembly |
| CN112531071A (en) * | 2020-12-18 | 2021-03-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz field effect detector based on thin barrier material and design method thereof |
| CN113078233A (en) * | 2021-03-04 | 2021-07-06 | 电子科技大学 | Silicon-based field effect tube terahertz detector with high responsivity |
| CN114361032A (en) * | 2021-11-23 | 2022-04-15 | 西安电子科技大学 | Low-contact-resistance GaN-based device and manufacturing method thereof |
| CN114864737A (en) * | 2022-04-13 | 2022-08-05 | 西安电子科技大学广州研究院 | Terahertz detector based on GaN MIS-HEMT structure and preparation method thereof |
| CN115274851A (en) * | 2022-07-01 | 2022-11-01 | 西安电子科技大学 | Enhanced radio frequency device based on P-GaN cap layer and Fin structure and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| ARULKUMARAN, S等: "Nano-channel_InAlN_GaN_Fin-HEMTs_for_ultra-high-speed_electronics", IEEE, 1 January 2015 (2015-01-01), pages 1 - 2 * |
| 靳晓琦: "异质结场效应管等离子波不稳定性与负微分电阻效应研究", 《中国优秀硕士学位论文全文数据库（信息科技辑）》, 15 May 2021 (2021-05-15), pages 10 - 26 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Yu et al. | Vertical architecture for enhancement mode power transistors based on GaN nanowires | |
| US7525130B2 (en) | Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same | |
| CN105006485B (en) | One kind is based on semimetallic FET and HEMT of topology and preparation method thereof | |
| CN102130159B (en) | High electron mobility transistor | |
| CN102931230B (en) | Aluminum gallium nitride does the gallium nitrate based HEMT of double heterojunction and the manufacture method of resistive formation | |
| CN102969341A (en) | Nitride high electronic mobility transistor extension structure of component gradually-changed ALyGal-yN buffer layer | |
| CN102646700A (en) | Epitaxial structure for nitride high electron mobility transistors of composite buffer layers | |
| CN105322009A (en) | Gallium nitride based high electronic mobility transistor epitaxial structure and manufacturing method therefor | |
| US11469101B2 (en) | Semiconductor structure and manufacturing method therefor | |
| CN100397655C (en) | Structure of improving gallium nitride base high electronic mobility transistor property and producing method | |
| CN113299553B (en) | Growth method of nitride high electron mobility transistor epitaxial material | |
| CN102544086B (en) | GaN-based high-electron-mobility transistor and manufacturing method thereof | |
| US11848205B2 (en) | Semiconductor structure and manufacturing method therefor | |
| CN109638074A (en) | High electron mobility transistor and preparation method thereof with n-p-n structure back potential barrier | |
| US20190115463A1 (en) | High Electron Mobility Transistor with Tunable Threshold Voltage | |
| CN116741869A (en) | Device for improving responsivity of terahertz detector | |
| CN116682850A (en) | Gallium nitride-based transistor | |
| CN106601790A (en) | Longitudinal modulated doped gallium-nitride-based field effect transistor structure and manufacturing method thereof | |
| CN110649098B (en) | Ballistic transport vertical transistor based on nano array and manufacturing method thereof | |
| CN104409492A (en) | Nitrogen polar GaN transistor | |
| RU160576U1 (en) | TRANSISTOR HETEROSTRUCTURE OF TYPE P-HEMT WITH VARIZONAL BARRIER AlX (Z) Ga1-X (Z) As | |
| Chen et al. | Emerging High power mm-Wave RF transistors | |
| CN204348720U (en) | A kind of composite channel MHEMT microwave oscillator | |
| JPH06188271A (en) | Field effect transistor | |
| CN103560146A (en) | Epitaxy structure for manufacturing GaN hetero-junction filed-effect transistor and growing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |