CN108054180A - A kind of charge coupling device based on graphene/insulating layer/semiconductor structure - Google Patents
A kind of charge coupling device based on graphene/insulating layer/semiconductor structure Download PDFInfo
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- CN108054180A CN108054180A CN201810082542.6A CN201810082542A CN108054180A CN 108054180 A CN108054180 A CN 108054180A CN 201810082542 A CN201810082542 A CN 201810082542A CN 108054180 A CN108054180 A CN 108054180A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
Abstract
The invention discloses a kind of charge coupling device based on graphene/insulating layer/semiconductor structure, several pixels including forming array, the pixel includes grid, Semiconductor substrate, insulating layer, source electrode, drain electrode and graphene film successively from bottom to top；The source electrode and the drain electrode horizontal interval are arranged in the upper surface of the insulating layer；The graphene film be covered in the source electrode, drain electrode and its between insulating layer upper surface.Incident light is irradiated to the charge coupling device surface of the present invention, is absorbed by Semiconductor substrate.Due to the special nature of graphene film, it can effectively collect carrier by capacitive couplings, the photo-signal of generation is directly from single pixel structure output, realize local reading, random read take, without horizontal transfer charge mode between the pixel of traditional devices, fundamentally change the charge signal playback mode of charge coupling device, improve Whole Response speed, linear dynamic range and the reliability of imaging system.
Description
Technical field
The invention belongs to image sensor technologies fields, are related to image sensor devices structure more particularly to one kind is based on
The charge coupling device of graphene/insulating layer/semiconductor structure.
Background technology
Charge coupling device (CCD) imaging sensor can directly convert optical signals into analog current signal, electric current letter
Number by amplification and analog-to-digital conversion, realize acquisition, storage, transmission, processing and the reproduction of image.It can be according to being radiated at its face
On light generate corresponding charge signal, the digital signal of " 0 " or " 1 " is being converted by analog-digital converter chip, it is this
Digital signal can preserve i.e. receipts optical signal by flash memory or hard disk card and be converted into computer after overcompression and program arrangement
The electronic image signal that can be identified can carry out testee accurately to measure, analyze.Traditional CCD is sensed with cmos image
Device compare have better image quality, but due to CCD by the way of charge lateral transport between pixel output data, system
Whole Response speed it is slow, as long as and wherein there are one pixel transmission break down, the data that may result in an entire row can not
Normal transmission, therefore control the yields of CCD more difficult.
Graphene is the cellular two dimensional surface crystal film being made of individual layer sp2 hydbridized carbon atoms, have excellent power,
The performances such as heat, light, electricity.Different from common metal, graphene is a kind of with transparent and flexible New Two Dimensional conductive material.Stone
It black alkene and is covered in semiconductor oxide piece and may be constructed simple fet structure, preparation process is simple, is easily transferred to any
On substrate.Since graphene translucency is very high, the quantum efficiency of Traditional photovoltaic device can be improved.
The content of the invention
In order to solve the above technical problems, the present invention provides a kind of charge based on graphene/insulating layer/semiconductor structure
Coupled apparatus.
A kind of charge coupling device based on graphene/insulating layer/semiconductor structure of the present invention, it is described including pixel
Pixel includes grid, Semiconductor substrate, insulating layer, source electrode, drain electrode and graphene film successively from bottom to top；The source electrode and institute
State the upper surface that drain electrode horizontal interval is arranged in the insulating layer；The graphene film be covered in the source electrode, drain electrode and its
Between insulating layer upper surface.
As preferred technical solution, the Semiconductor substrate is that semiconductor is lightly doped.
As preferred technical solution, the Semiconductor substrate is n-type lightly-doped silicon, and insulating layer is silica.
As preferred technical solution, drain region, the buried channel are provided between the Semiconductor substrate and insulating layer
Layer adulterates for n-type, and the Semiconductor substrate is adulterated for p-type.
As preferred technical solution, the Semiconductor substrate is low energy gap width semiconductor.
As preferred technical solution, the graphene film is divided into two sections, and one section is n-type doped graphene, and one section is p
Type doped graphene is respectively overlay on the source electrode and drain electrode, is connected on insulating layer, forms PN junction.
As preferred technical solution, the insulating layer is the low material of Ultroviolet absorptivity.
As preferred technical solution, the Semiconductor substrate is wide bandgap semiconductor.
As preferred technical solution, the insulating layer is high dielectric constant.
As preferred technical solution, light injects the charge coupling device by lower section, improves the flexibility used.
The operation principle of graphene film is in the application：Graphene forms MIS structure with insulating layer, Semiconductor substrate,
As gate voltage gradually increases, silicon base will enter spent condition from electron accumulation.If grid voltage is sufficiently large, semiconductor-insulator layer
Interface will form hole inversion layer.But if grid voltage is pulse signal, and needs certain service life is generated due to minority carrier
Inversion layer will not occur immediately in time, and still maintaining the state exhausted, (thickness ratio that exhausts at this moment is maximally depleted layer thickness
It is also big)；What this majority carrier had been depleted completely, it should occur and not occur the semiconductor table of inversion layer for the moment
Surface state is known as deep spent condition.Into deep spent condition, width of depletion region increase.When incident light is irradiated to device area, silicon
Depletion region absorbs incident light and simultaneously generates electron-hole pair, and quantum efficiency is close to 100%；If Semiconductor substrate is n-type, in height
Electron stream is collected by graphene under fast grid electric field action, and the fermi level of graphene is caused to rise.Due to the special energy of graphene
Band structure, the conductance of graphene can corresponding proportional variation.After so applying fixed bias to graphene, pass through graphene
Electric current can synchronously reflect the quantity of electric charge of potential well memory storage, and read without repeatedly transfer.
Charge coupled array is widely used, such as imaging and monitoring.The application be based on graphene/insulating layer/
The charge coupling device of semiconductor structure can use standard semi-conductor processes to make photodetector array.Pass through wire bonding
Method, with the top electrode of gold thread or metal interconnecting wires each element in charge coupled array and traditional signal processing electricity
The electrode on road connects, and all CCD pixels of photodetector array can be obtained using traditional signal processing circuit
Data.
A kind of charge coupling device based on graphene/insulating layer/semiconductor structure of the present invention has below beneficial to effect
Fruit：
1. incident light is irradiated to the application charge coupling device surface, absorbed by graphene and Semiconductor substrate.Pulse is inclined
Pressure is added to device back-gate electrode, and Semiconductor substrate enters deep spent condition, in the photo-generated carrier (both hole and electron that depletion layer generates
It is right) separated under device inside electric field action, electronics is collected by graphene, so as to form larger photo-signal, have compared with
Big linear dynamic range；
2. graphene cost of material is relatively low, device architecture is simple, is easy to manufacture on a large scale, and compatible with CMOS technology；
3. graphene enhances absorbing incident light, compared to traditional polysilicon electrode, greatly improves as transparent electrode
Conventional charge coupled apparatus has widened the response spectrum of imaging sensor in ultraviolet and infrared band quantum efficiency；
4. due to the special nature of graphene film, carrier can be effectively collected by capacitive couplings, generation
Photo-signal directly from single pixel structure output, realizes local reading, random read take, without the pixel of traditional devices
Between horizontal transfer charge mode, fundamentally change charge coupling device charge signal playback mode, improve imaging system
Whole Response speed, linear dynamic range and reliability.
5. graphene has higher gain in itself, since charge coupling device can constantly accumulate photogenerated charge
Point, even if can also obtain very big photoelectric respone under low light environment.
Description of the drawings
Fig. 1 is the structure diagram of the charge coupling device in embodiment 1-6；
Fig. 2 is operated in 0~-30V for charge coupling device, and duty cycle is 532nm, light under 20% 1kHz pulse grid voltages
Energy is 0~120mW/cm2The optical response plot of laser and its in light energy in 0~4mW/cm2Graph；
Fig. 3 is within a gate voltage pulse cycle, and the photoresponse with the 1550nm laser irradiation devices of varying strength is bent
Line chart；
Fig. 4 is the structure diagram of the charge coupling device in embodiment 7；
Fig. 5 is the structure diagram of the charge coupling device in embodiment 8；
Fig. 6 is the energy band diagram of the charge coupling device in embodiment 8.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment belongs to the scope of protection of the invention.
Embodiment 1
As shown in Figure 1, a kind of charge coupling device based on graphene/insulating layer/semiconductor structure of the present embodiment, bag
Several pixels of composition array are included, pixel includes grid 1, n-type lightly-doped silicon Semiconductor substrate 2, titanium dioxide successively from bottom to top
Silicon insulating layer 3, source electrode 4, drain electrode 5 and graphene film 6；Source electrode 4 and 5 horizontal intervals of drain electrode are arranged in silicon dioxide insulating layer 3
Upper surface；Graphene film 6 be covered in source electrode 4, drain electrode 5 and its between silicon dioxide insulating layer 3 upper surface.
Wherein, the material of grid 1 is made as gallium-indium alloy, and the thickness of n-type lightly-doped silicon Semiconductor substrate 2 is 300~500
μm, resistivity is 1~10 Ω cm, and the thickness of silicon dioxide insulating layer 3 is 10~100nm, source electrode 4 and 5 material therefors that drain
For chrome gold alloy, the size of graphene film 6 is 100 μm of 100 μ m.
Pulse grid voltage is added to the charge coupling device of the present embodiment so that it can exhaust working condition into deep, realizes light
Son absorbs.Source electrode 4 and drain electrode 5 directly apply fixed-bias transistor circuit, realize nondestructive readout of the charge on graphene in potential well.Wherein grid
The cathode of voltage is connected on the grid 1 of device, and the anode of gate voltage is connected on the source electrode 4 of charge coupling device, in source electrode 4
Between drain electrode 5 plus 1V is biased, as shown in Figure 1.
The method for preparing above-mentioned charge coupling device pixel, comprises the following steps：
(1) in the upper surface oxidation growth silicon dioxide insulating layer 3 of n-type lightly-doped silicon Semiconductor substrate 2, n-type used is light
The resistivity for adulterating silicon semiconductor substrate 2 is 1~10 Ω cm；The thickness of silicon dioxide insulating layer 3 is 100nm~200nm, raw
Long temperature is 900~1200 DEG C；
(2) figure of top electrode sum is gone out in 3 photomask surface of silicon dioxide insulating layer, then using electron beam evaporation technique,
Then the chromium adhesion layer source electrode 4 that growth thickness is about 5nm first grows the gold electrode drain electrode 5 of 60nm；
(3) graphene is covered in the upper surface of the upper surface of top electrode (source electrode 4 and drain electrode 5) and silicon dioxide insulating layer 3
Film 6；Wherein, the transfer method of graphene film 6 is：6 surface of graphene film is uniformly coated into a strata methacrylic acid
Methyl esters (PMMA) film, be then placed in etching solution 4 it is small when erosion removal copper foil, leave thin by the graphene of PMMA supports
Film；Silicon dioxide insulating layer 3 and top electrode (source electrode 4 are transferred to after the PMMA graphene films 6 supported are cleaned with deionized water
With the upper surface of drain electrode 5)；Finally with acetone and isopropanol removal PMMA；Wherein, etching solution is by CuSO4, HCl and water composition,
CuSO4：HCl：H2O=10g:45ml:50ml；
(4) region area of graphene is defined by photoetching process (secondary photoetching), photoresist is made to cover entire metal electricity
Polar region domain passes through oxygen plasma reactive ion etching technology (Oxygen plasma ICP-RIE), power and etch period
Respectively 75W 3 minutes, etches away the extra graphene outside photoresist, after the completion of etching, is cleaned simultaneously with acetone and isopropanol
Remove remaining photoresist；
(5) prepared at 2 back side of n-type lightly-doped silicon Semiconductor substrate and 2 Ohmic contact of n-type lightly-doped silicon Semiconductor substrate
Metal gates 1.
The charge coupling device of the present embodiment uses n-type lightly-doped silicon Semiconductor substrate 2, and gate voltage is operated in 0~-30V,
Duty cycle is under 20% 1kHz pulse grid voltages, and 532nm, light energy are 0~120mW/cm2The optical response plot of laser and its
In light energy in 0~4mW/cm2Graph it is as shown in Figure 2.Figure it is seen that prepared device is in 0~4mW/cm2Tool
There is the good linearity；And photoelectric current is larger, it was demonstrated that device can be applied to image sensor array.
More than structure is based on, larger response is generated in infrared band using the interfacial state of silicon-silica, improves Charged Couple
The responsiveness of device.
Semiconductor substrate 2 used be n-type lightly-doped silicon, insulating layer 3 be silica, the interface between silicon and silica
State can absorb infrared light and generate electron hole pair, and being transferred to makes the conductance of graphene generate variation in graphene, finally lead
Cause the output current variation on graphene.Although the quantum efficiency that interfacial state absorbs infrared light is extremely low, since the charge of CCD accumulates
It is allocated as using and the gain effect of graphene itself, can still obtain larger response.As shown in figure 3, in a gate voltage
In pulse period, with the 1550nm laser irradiation devices of varying strength, it is seen that it is responded substantially, and responsiveness is about 50mA/W, is
50 times of commercial infrared probe.Its response wave length scope is surveyed as 200~2000nm.
Embodiment 2
As shown in Figure 1, a kind of charge coupling device based on graphene/insulating layer/semiconductor structure of the present embodiment, bag
Several pixels of composition array are included, pixel includes grid 1, n-type lightly-doped silicon Semiconductor substrate 2, titanium dioxide successively from bottom to top
Silicon insulating layer 3, source electrode 4, drain electrode 5 and graphene film 6；Source electrode 4 and 5 horizontal intervals of drain electrode are arranged in silicon dioxide insulating layer 3
Upper surface；Graphene film 6 be covered in source electrode 4, drain electrode 5 and its between silicon dioxide insulating layer 3 upper surface.
Wherein, the material of grid 1 is made as gallium-indium alloy, and the thickness of n-type lightly-doped silicon Semiconductor substrate 2 is 300~500
μm, resistivity is 1~10 Ω cm, and the thickness of silicon dioxide insulating layer 3 is 50~70nm, and source electrode 4 and 5 material therefors of drain electrode are
Chrome gold alloy, the size of graphene film 6 is 3 μm of 3 μ m.
Pulse grid voltage is added to the charge coupling device of the present embodiment so that it can exhaust working condition into deep, realizes light
Son absorbs.Source electrode 4 and drain electrode 5 directly apply fixed-bias transistor circuit, realize nondestructive readout of the charge on graphene in potential well.Wherein grid
The cathode of voltage is connected on the grid 1 of device, and the anode of gate voltage is connected on the source electrode 4 of charge coupling device, in source electrode 4
Between drain electrode 5 plus 1V is biased, as shown in Figure 1.
By reducing Pixel Dimensions, while thickness of insulating layer is thinned, and then reduces the oxidation layer capacitance of device, reduce device
Whole RC constants are so as to improving the operating rate of device.Therefore the Pixel Dimensions of the present embodiment are reduced to 3 μm or so of 3 μ m.
From the principle of interference of light, in insulating layer of thin-film, when its thickness meets d=λ/(4n), wherein λ is incidence
Wavelength, n are the refractive index of material, and the reflectivity of light can be made to reach minimum, thus for this system of silicon-silica,
The thickness of silicon dioxide insulating layer 3 can be contracted to 50~70nm, to improve its light transmittance in ultraviolet band, promote charge
Coupled apparatus is in the response performance of ultraviolet band.
By the way that silicon chip substrate thickness is thinned to the transmission depth of light, and light is allowed to reduce gold from silicon chip substrate back surface incident
Belong to the stop of electrode pair light, charge is read from the positive graphene of silicon chip substrate.Compare commercial CCD, Charged Couple
The quantum efficiency of device is promoted to 90%~95%.
Embodiment 3
As shown in Figure 1, a kind of charge coupling device based on graphene/insulating layer/semiconductor structure of the present embodiment, bag
Several pixels of composition array are included, pixel includes grid 1, low energy gap width semiconductor 2, insulating layer 3, source electrode successively from bottom to top
4th, drain electrode 5 and graphene film 6；Source electrode 4 and 5 horizontal intervals of drain electrode are arranged in the upper surface of insulating layer 3；Graphene film 6 covers
Cover source electrode 4, drain electrode 5 and its between insulating layer 3 upper surface.
Wherein, make the material of grid 1 as gallium-indium alloy, low energy gap width semiconductor 2 using germanium Ge, indium antimonide InSb,
Indium gallium arsenic InGaAs or group Ⅲ-Ⅴ compound semiconductor, thickness are 300~500 μm, and resistivity is 1~10 Ω cm, is insulated
The thickness of layer 3 is 10~100nm, and source electrode 4 and 5 material therefors of drain electrode are chrome gold alloy, and the size of graphene film 6 is 100 μm
×100μm。
Pulse grid voltage is added to the charge coupling device of the present embodiment so that it can exhaust working condition into deep, realizes light
Son absorbs.Source electrode 4 and drain electrode 5 directly apply fixed-bias transistor circuit, realize nondestructive readout of the charge on graphene in potential well.Wherein grid
The cathode of voltage is connected on the grid 1 of device, and the anode of gate voltage is connected on the source electrode 4 of charge coupling device, in source electrode 4
Between drain electrode 5 plus 1V is biased, as shown in Figure 1.
The charge coupling device structure of the present embodiment replaces low energy gap width semiconductor and generates larger sound in infrared band
It answers, improves the responsiveness of charge coupling device.
It can be realized in a variety of semiconductors due to exhausting this state deeply.Therefore Semiconductor substrate 2 is used into narrow taboo
Bandwidth semiconductor such as germanium Ge, indium antimonide InSb, indium gallium arsenic InGaAs, group Ⅲ-Ⅴ compound semiconductor etc., these semiconductors can
Directly to absorb infrared photon, larger responsiveness and quantum efficiency are generated.But it should be noted that semiconductor-insulator stratum boundary
Face should have good interfacial characteristics, flood optical response signal to prevent heat from generating excessive velocities.Infrared band can expand
Exhibition is to 5 μm or more.
Embodiment 4
As shown in Figure 1, a kind of charge coupling device based on graphene/insulating layer/semiconductor structure of the present embodiment, bag
Several pixels of composition array are included, pixel includes grid 1, wide bandgap semiconductor 2, insulating layer 3, source electrode successively from bottom to top
4th, drain electrode 5 and graphene film 6；Source electrode 4 and 5 horizontal intervals of drain electrode are arranged in the upper surface of insulating layer 3；Graphene film 6 covers
Cover source electrode 4, drain electrode 5 and its between insulating layer 3 upper surface.
Wherein, the material of grid 1 is made as gallium-indium alloy, and the thickness of wide bandgap semiconductor 2 is 300~500 μm, electricity
Resistance rate is 1~10 Ω cm, and the thickness of insulating layer 3 is 10~100nm, and source electrode 4 and 5 material therefors that drain is chrome gold alloys, stone
The size of black alkene film 6 is 100 μm of 100 μ m.
Pulse grid voltage is added to the charge coupling device of the present embodiment so that it can exhaust working condition into deep, realizes light
Son absorbs.Source electrode 4 and drain electrode 5 directly apply fixed-bias transistor circuit, realize nondestructive readout of the charge on graphene in potential well.Wherein grid
The cathode of voltage is connected on the grid 1 of device, and the anode of gate voltage is connected on the source electrode 4 of charge coupling device, in source electrode 4
Between drain electrode 5 plus 1V is biased, as shown in Figure 1.
More than structure is based on, wide bandgap semiconductor is replaced and generates larger response in ultraviolet band, improve Charged Couple
The responsiveness of device makes charge coupling device only absorb the light of ultraviolet band.
It can be realized in a variety of semiconductors due to exhausting this state deeply.Therefore Semiconductor substrate 2 is prohibited using wide
Bandwidth semiconductor such as gallium nitride GaN, carborundum SiC etc., these semiconductors can directly absorb ultraviolet photon, can generate compared with
Big responsiveness and quantum efficiency.But it should be noted that semiconductor-insulator bed boundary should have good interfacial characteristics,
Optical response signal is flooded to prevent heat from generating excessive velocities, reduces the interference of visible ray.
Embodiment 5
As shown in Figure 1, a kind of charge coupling device based on graphene/insulating layer/semiconductor structure of the present embodiment, bag
Several pixels of composition array are included, it is low that pixel includes grid 1, Semiconductor substrate 2, Ultroviolet absorptivity successively from bottom to top
Insulating layer 3, source electrode 4, drain electrode 5 and graphene film 6 made of material；Source electrode 4 and 5 horizontal intervals of drain electrode are arranged in insulating layer 3
Upper surface；Graphene film 6 be covered in source electrode 4, drain electrode 5 and its between insulating layer 3 upper surface.
Wherein, the material of grid 1 is made as gallium-indium alloy, and the thickness of Semiconductor substrate 2 is 300~500 μm, and resistivity is
1~10 Ω cm, the thickness of insulating layer 3 made of the low material of Ultroviolet absorptivity are 10~100nm, source electrode 4 and drain electrode 5
Material therefor is chrome gold alloy, and the size of graphene film 6 is 100 μm of 100 μ m.
Pulse grid voltage is added to the charge coupling device of the present embodiment so that it can exhaust working condition into deep, realizes light
Son absorbs.Source electrode 4 and drain electrode 5 directly apply fixed-bias transistor circuit, realize nondestructive readout of the charge on graphene in potential well.Wherein grid
The cathode of voltage is connected on the grid 1 of device, and the anode of gate voltage is connected on the source electrode 4 of charge coupling device, in source electrode 4
Between drain electrode 5 plus 1V is biased, as shown in Figure 1.
Since the translucency of graphene is preferable, the reflectivity of ultraviolet light can be reduced from design by improving ultraviolet response,
From the point of view of insulating layer is reduced to the absorption of ultraviolet light, the responsiveness in ultraviolet band of charge coupling device is improved.It is based on
Silica is larger to the absorption of ultraviolet light, selects the insulating layer material to Ultroviolet absorptivity bottom, such as using silicon nitride or
The insulating layer material less to ultraviolet band light absorption such as high dielectric constant material.
Embodiment 6
As shown in Figure 1, a kind of charge coupling device based on graphene/insulating layer/semiconductor structure of the present embodiment, bag
Several pixels of composition array are included, pixel includes grid 1, Semiconductor substrate 2, high dielectric constant and is made successively from bottom to top
Insulating layer 3, source electrode 4, drain electrode 5 with graphene film 6；Source electrode 4 and 5 horizontal intervals of drain electrode are arranged in the upper surface of insulating layer 3；
Graphene film 6 be covered in source electrode 4, drain electrode 5 and its between insulating layer 3 upper surface.
Wherein, the material of grid 1 is made as gallium-indium alloy, and the thickness of Semiconductor substrate 2 is 300~500 μm, and resistivity is
1~10 Ω cm, the thickness of insulating layer 3 made of high dielectric constant material are 10~100nm, source electrode 4 and 5 material therefors that drain
For chrome gold alloy, the size of graphene film 6 is 100 μm of 100 μ m.
Pulse grid voltage is added to the charge coupling device of the present embodiment so that it can exhaust working condition into deep, realizes light
Son absorbs.Source electrode 4 and drain electrode 5 directly apply fixed-bias transistor circuit, realize nondestructive readout of the charge on graphene in potential well.Wherein grid
The cathode of voltage is connected on the grid 1 of device, and the anode of gate voltage is connected on the source electrode 4 of charge coupling device, in source electrode 4
Between drain electrode 5 plus 1V is biased, as shown in Figure 1.
Insulating layer made of high dielectric constant has enhancing capacitance coupling effect, reduces grid voltage, reduces the work of power consumption
With.
Embodiment 7
As shown in Figure 4, a kind of charge coupling device based on graphene/insulating layer/semiconductor structure of the present embodiment, bag
Several pixels of composition array are included, pixel includes grid 1, Semiconductor substrate 2, insulating layer 3, source electrode 4, drain electrode successively from bottom to top
5 and graphene film；Source electrode 4 and 5 horizontal intervals of drain electrode are arranged in the upper surface of insulating layer 3；Graphene film 6 is covered in source electrode
4th, drain electrode 5 and its between insulating layer 3 upper surface；Graphene film is divided into two sections, and one section is n-type doped graphene 61, and one
Section is p-type doped graphene 62, is respectively overlay on source electrode 4 and drain electrode 5 and (does not limit n-type doped graphene 61 and p-type doping stone
Black alkene 62 is respectively overlay on source electrode 4 and drain electrode 5 or drain electrode 5 and source electrode 4), it is connected on insulating layer 3, forms PN junction.
Wherein, the material of grid 1 is made as gallium-indium alloy, and the thickness of Semiconductor substrate 2 is 300~500 μm, and resistivity is
1~10 Ω cm, the thickness of insulating layer 3 is 10~100nm, and source electrode 4 and 5 material therefors of drain electrode are chrome gold alloy, and graphene is thin
The size of film 6 is 100 μm of 100 μ m.
Pulse grid voltage is added to the charge coupling device of the present embodiment so that it can exhaust working condition into deep, realizes light
Son absorbs.Source electrode 4 and drain electrode 5 directly apply fixed-bias transistor circuit, realize nondestructive readout of the charge on graphene in potential well.Wherein grid
The cathode of voltage is connected on the grid 1 of device, and the anode of gate voltage is connected on the source electrode 4 of charge coupling device, in source electrode 4
Between drain electrode 5 plus 1V is biased, as shown in Figure 4.
Since the doping of graphene can be replaced, PN junction by artificial regulation and control with the PN junction that pure graphene is formed
Dark current very little, and response can be generated to light, improve photoresponse while reducing dark current, reduce charge-coupled device
The power consumption of part.
Embodiment 8
As shown in Figure 5, a kind of charge coupling device based on graphene/insulating layer/semiconductor structure of the present embodiment, bag
Include composition array several pixels, pixel from bottom to top successively include grid 1, p-type adulterate Semiconductor substrate 2, insulating layer 3,
Source electrode 4, drain electrode 5 and graphene film 6；Source electrode 4 and 5 horizontal intervals of drain electrode are arranged in the upper surface of insulating layer 3；Graphene film
6 be covered in source electrode 4, drain electrode 5 and its between insulating layer 3 upper surface；It is provided between Semiconductor substrate 2 and insulating layer 3
The drain region 7 of the n-type doping opposite with silicon base doping type.
Wherein, the material of grid 1 is made as gallium-indium alloy, and the thickness of the Semiconductor substrate 2 of p-type doping is 300~500 μ
M, resistivity are 1~10 Ω cm, and the thickness of insulating layer 3 is 10~100nm, and source electrode 4 and 5 material therefors of drain electrode close for chrome gold
Gold, the size of graphene film 6 is 100 μm of 100 μ m；The thickness of the drain region 7 of n-type doping is 2 μm, and resistivity is 1~10
Ω·cm。
Pulse grid voltage is added to the charge coupling device of the present embodiment so that it can exhaust working condition into deep, realizes light
Son absorbs.Source electrode 4 and drain electrode 5 directly apply fixed-bias transistor circuit, realize nondestructive readout of the charge on graphene in potential well.Wherein grid
The cathode of voltage is connected on the grid 1 of device, and the anode of gate voltage is connected on the source electrode 4 of charge coupling device, in source electrode 4
Between drain electrode 5 plus 1V is biased, as shown in Figure 5.
Drain region 7 is fully- depleted, as can be seen that the photogenerated charge of accumulation leaves surface from the energy band diagram of Fig. 6, is stored
In potential trough in vivo, reduce surface recombination, so as to improve charge transfer efficiency, reduce dark current.
Surface channel CCD can influence the transfer velocity of charge, and the heat generation in the case of details in a play not acted out on stage, but told through dialogues due to the presence of surface state
Higher, and there is one layer of doped layer opposite with Semiconductor substrate doping type on Buried Channel CCD surface, which is completely depleted,
The photogenerated charge of accumulation leaves surface, reduces the dark noise that surface heat generation is brought, improves transfer efficiency, optimize charge coupling
The operating rate of clutch part.
Moreover, it will be appreciated that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
Using specification as an entirety, the technical solutions in each embodiment can also be properly combined, forms those skilled in the art
It is appreciated that other embodiment.The doping of the n-type of involved Semiconductor substrate or other functional layers, p-type are mixed in the application
It is miscellaneous, merely for convenience of description, stated as special case.Doping type (n-type is changed to p-type, p-type is changed to n-type) is exchanged, is only caused
Device carrier type (electronics or hole) exchanges, the operation principle without influencing device, therefore without departing from this explanation
The scope of book.
Claims (10)
1. a kind of charge coupling device based on graphene/insulating layer/semiconductor structure, several pixels including forming array,
It is characterized in that, the pixel is thin including grid, Semiconductor substrate, insulating layer, source electrode, drain electrode and graphene successively from bottom to top
Film；The source electrode and the drain electrode horizontal interval are arranged in the upper surface of the insulating layer；The graphene film is covered in institute
State source electrode, drain electrode and its between insulating layer upper surface.
2. a kind of charge coupling device based on graphene/insulating layer/semiconductor structure according to claim 1, special
Sign is that the Semiconductor substrate is that semiconductor is lightly doped.
3. a kind of charge coupling device based on graphene/insulating layer/semiconductor structure according to claim 2, special
Sign is that the Semiconductor substrate is n-type lightly-doped silicon, and insulating layer is silica.
4. a kind of charge coupling device based on graphene/insulating layer/semiconductor structure according to claim 1, special
Sign is, drain region is provided between the Semiconductor substrate and insulating layer, the drain region adulterates for n-type, described partly to lead
Body substrate adulterates for p-type.
5. a kind of charge coupling device based on graphene/insulating layer/semiconductor structure according to claim 1, special
Sign is that the Semiconductor substrate is low energy gap width semiconductor.
6. a kind of charge coupling device based on graphene/insulating layer/semiconductor structure according to claim 1, special
Sign is that the graphene film is divided into two sections, and one section is n-type doped graphene, and one section is p-type doped graphene, is covered respectively
It covers on the source electrode and drain electrode, is connected on insulating layer, form PN junction.
7. a kind of charge coupling device based on graphene/insulating layer/semiconductor structure according to claim 1, special
Sign is that the insulating layer is the low material of Ultroviolet absorptivity.
8. a kind of charge coupling device based on graphene/insulating layer/semiconductor structure according to claim 1, special
Sign is that the Semiconductor substrate is wide bandgap semiconductor.
9. a kind of charge coupling device based on graphene/insulating layer/semiconductor structure according to claim 1, special
Sign is that the insulating layer is high dielectric constant.
10. a kind of charge coupling device based on graphene/insulating layer/semiconductor structure according to claim 1, special
Sign is that light injects the charge coupling device by lower section.
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