CN109273554A - A kind of graphene-based built in field indium gallium arsenic detector - Google Patents
A kind of graphene-based built in field indium gallium arsenic detector Download PDFInfo
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- CN109273554A CN109273554A CN201811002938.1A CN201811002938A CN109273554A CN 109273554 A CN109273554 A CN 109273554A CN 201811002938 A CN201811002938 A CN 201811002938A CN 109273554 A CN109273554 A CN 109273554A
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 44
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 44
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 42
- 239000010410 layer Substances 0.000 claims abstract description 69
- 239000000463 material Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000002356 single layer Substances 0.000 claims abstract description 22
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
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Abstract
The present invention relates to a kind of graphene-based built in field indium gallium arsenic detectors, it uses indium phosphide for substrate material, successively grows up indium gallium arsenic material layer, one layer of silicon oxide dielectric layer that the indium gallium arsenic material layer, one layer of intrinsic indium gallium arsenic material layer, one layer of n of one layer of p doping are adulterated on substrate；It is shifted in silicon oxide dielectric layer middle section or deposits single-layer graphene layer, single-layer graphene layer two sides grow source electrode and drain electrode on silicon oxide dielectric layer, grow back-gate electrode under InP substrate.Single-layer graphene has the conductivity and mobility of superelevation；On the other hand under the effect of p-n junction built in field, the drift motion of photo-generated carrier greatly increases source-drain current, greatly enhances detector detectivity.
Description
Technical field
The present invention relates to a kind of semiconductor devices, in particular to a kind of graphene-based built in field indium gallium arsenic detector.
Background technique
In nature, temperature is higher than any object of absolute zero, all can constantly radiated infrared spectral line around, object
The radiation that body issues, will get to infrared receiving device by propagation in atmosphere.Due to carbon dioxide, vapor etc. in atmosphere
Gas can generate selective absorbing and Particle Scattering to infra-red radiation, make infra-red radiation that different degrees of decaying occur.Usually will
Atmospheric window is divided into short-wave infrared (1~3 μm), medium-wave infrared (3~6 μm) and LONG WAVE INFRARED (6~15 μm).
Infrared detection technique is that hot spot or image acquisition target are formed by using the infra-red radiation difference between target and background
And background information.According to the difference of detection target wavelength, selected detector is also different, in short-wave infrared field of detecting, indium
Gallium arsenic (InGaAs) infrared detector is due to its stability with room temperature working characteristics and indium gallium arsenic Material growth by blueness
It looks at.
Single-layer graphene is to have now been found that most thin two-dimensional layer material, due to its superior high-specific surface area, superelevation
The physicochemical characteristics such as carrier mobility, good mechanical property, in crowds such as opto-electronic device, optical composite material, sensors
It is multi-field to be widely used.
Summary of the invention
The present invention be directed to the problem of, propose a kind of graphene-based built in field indium gallium arsenic detector, pass through built-in electricity
Field makes to generate charge inducing in graphene layer, to enhance detector-source, electric leakage electrode current, enhances photodetection, to adapt to
The demand of Novel electronic devices high speed development.
The technical solution of the present invention is as follows: a kind of graphene-based built in field indium gallium arsenic detector, uses indium phosphide for substrate
Material successively grows up the indium gallium arsenic material layer of one layer of p doping on substrate, one layer of intrinsic indium gallium arsenic material layer, one layer of n mix
Miscellaneous indium gallium arsenic material layer, one layer of silicon oxide dielectric layer；Single-layer graphene is shifted or deposited in silicon oxide dielectric layer middle section
Layer, single-layer graphene layer two sides grow source electrode and drain electrode on silicon oxide dielectric layer, grow backgate under InP substrate
Electrode.
The InP substrate material thickness is 330 μm~370 μm.
The indium gallium arsenic layer thickness of the p doping is 0.95 μm, wherein mixing Zn concentration is 4 × 1018cm-3。
The intrinsic indium gallium arsenic layer thickness is 1.5 μm.
The indium gallium arsenic layer thickness of the n doping is 1 μm, and mixing Si concentration is 2 × 1018cm-3。
The silicon oxide dielectric layer is with a thickness of 90nm~300nm.
The single-layer graphene thickness degree is in 1nm or less.
The source electrode and drain electrode is the metal electrode that good Ohmic contact is formed with single-layer graphene layer.
The back-gate electrode is the metal electrode that good Ohmic contact is formed between InP substrate.
The beneficial effects of the present invention are: the graphene-based built in field indium gallium arsenic detector of the present invention, the graphene of use
Material thickness is nanometer scale, and save unit component occupies space, is conducive to device high-density development；Single-layer graphene tool
There are the conductivity and mobility of superelevation, improves detector performance；Under the effect of p-n junction built in field, the drift of photo-generated carrier
Shifting movement greatly increases source-drain current, greatly enhances detector detectivity.
Detailed description of the invention
Fig. 1 is the graphene-based built in field InGaAs panel detector structure schematic side view of the present invention；
Fig. 2 is that the graphene-based built in field InGaAs panel detector structure of the present invention illustrates the direction A top view.
Specific embodiment
When making the structure, well-known traditional handicraft in semiconductor technology can be used.It is used herein to show
Example understands the mode that embodiment herein can be carried out, and further such that those skilled in the art just for the sake of help
It can implement embodiment herein.Thus, example herein should not be interpreted as limiting the range of embodiment herein.
The basic conception that only the invention is illustrated in a schematic way is illustrated provided in the present embodiment, then schema only show and
Related component in the present invention rather than component count when according to actual implementation, shape and size are drawn, and when actual implementation is each
Kenel, quantity and the ratio of component can arbitrarily change for one kind, and its assembly layout kenel may also be increasingly complex.
A kind of embodiment 1: graphene-based built in field indium gallium arsenic detector
Firstly, using indium phosphide for substrate material, and substrate is cleaned, 1 material thickness of indium phosphide (InP) substrate is 330 μm
~370 μm.
Then 1 is grown upwards in turn on InP substrate 1 using Metallo-Organic Chemical Vapor deposition (MOCVD) technology)
With a thickness of 0.95 μm, mixing Zn concentration is 4 × 1018cm-3P doped indium gallium arsenic (InGaAs) material layer 2；2) with a thickness of 1.5 μm
Intrinsic indium gallium arsenic material layer 3；3) with a thickness of 1 μm, mixing Si concentration is 2 × 1018cm-3N doped indium gallium arsenic material layer 4.
The SiO of chemical vapor deposition (PECVD) the deposition techniques thickness 90nm of using plasma enhancing later2Dielectric layer 5,
Underlayer temperature is 330 ± 20 DEG C, RF power is 40 ± 10W.
Dry method transfer techniques are used again, and single-layer graphene layer 6 is transferred to SiO2On dielectric layer 5, thickness in monolayer is
0.334nm, single-layer graphene layer 6 are located at SiO2Dielectric layer middle section, graphene-based built in field InGaAs is visited as shown in Figure 2
Survey the direction device structural representation A top view.
Metal electrode is finally deposited, in SiO26 two sides of single-layer graphene layer deposit source electrode 7 and leakage respectively on dielectric layer 5
Electrode 8, the center deposit back-gate electrode 9 under InP substrate 1, deposits metal electrode, vacuum degree using ion beam sputtering process
It is 2~5 × 10-2Pa, ion beam energy are 80eV~250eV.
Source electrode 7 and drain electrode 8 are Ti/Pt/Au metal electrode, form good Ohmic contact with single-layer graphene layer 6；
Back-gate electrode 9 forms good Ohmic contact between Cr/Au metal electrode, with InP substrate 1.
A kind of embodiment 2: graphene-based built in field indium gallium arsenic detector
Firstly, using indium phosphide for substrate material, and clean substrate.
Then 1 is successively grown on InP substrate 1 using Metallo-Organic Chemical Vapor deposition (MOCVD) technology) thickness
It is 0.95 μm, mixing Zn concentration is 4 × 1018cm-3P doped indium gallium arsenic material layer 2；2) with a thickness of 1.5 μm of intrinsic indium gallium arsenic material
The bed of material 3；3) with a thickness of 1 μm, mixing Si concentration is 2 × 1018cm-3N doped indium gallium arsenic material layer 4.
The SiO of chemical vapor deposition (PECVD) the deposition techniques thickness 200nm of using plasma enhancing later2Dielectric layer
5, underlayer temperature is 330 ± 20 DEG C, RF power is 40 ± 10W.
One layer of single-layer graphene 6, thickness in monolayer 0.334nm are directly grown using CVD method again.It is shifted by transfer techniques
To SiO2On dielectric layer 5.
Metal electrode is finally deposited, metal electrode is deposited using ion beam sputtering process, vacuum degree is 2~5 × 10-2Pa,
Ion beam energy is 80eV~250eV.
A kind of embodiment 3: novel graphite alkenyl built in field InGaAs detector
Firstly, using indium phosphide for substrate material, and clean substrate.
Then 1 is successively grown on InP substrate 1 using Metallo-Organic Chemical Vapor deposition (MOCVD) technology) thickness
It is 0.95 μm, mixing Zn concentration is 4 × 1018cm-3P doped indium gallium arsenic material layer 2；2) with a thickness of 1.5 μm of intrinsic indium gallium arsenic material
The bed of material 3；3) with a thickness of 1 μm, mixing Si concentration is 2 × 1018cm-3N doped indium gallium arsenic material layer 4.
The SiO of chemical vapor deposition (PECVD) the deposition techniques thickness 300nm of using plasma enhancing later2Dielectric layer
5, underlayer temperature is 330 ± 20 DEG C, RF power is 40 ± 10W.
One layer of single-layer graphene 6, thickness in monolayer 0.334nm are prepared using chemical liquid phase synthetic method again.By shifting skill
Art is transferred to SiO2On dielectric layer 5.
Metal electrode is finally deposited, metal electrode is deposited using ion beam sputtering process, vacuum degree is 2~5 × 10-2Pa,
Ion beam energy is 80eV~250eV.
Claims (9)
1. a kind of graphene-based built in field indium gallium arsenic detector, which is characterized in that use indium phosphide for substrate material, successively exist
The indium gallium arsenic that the indium gallium arsenic material layer, one layer of intrinsic indium gallium arsenic material layer, one layer of n of one layer of p doping are adulterated is grown up on substrate
Material layer, one layer of silicon oxide dielectric layer；It is shifted in silicon oxide dielectric layer middle section or deposits single-layer graphene layer, in silica
Single-layer graphene layer two sides grow source electrode and drain electrode on dielectric layer, grow back-gate electrode under InP substrate.
2. graphene-based built in field indium gallium arsenic detector according to claim 1, which is characterized in that the indium phosphide lining
Bottom material is with a thickness of 330 μm~370 μm.
3. graphene-based built in field indium gallium arsenic detector according to claim 2, which is characterized in that the indium of the p doping
Gallium arsenic layer thickness is 0.95 μm, wherein mixing Zn concentration is 4 × 1018cm-3。
4. graphene-based built in field indium gallium arsenic detector according to claim 2, which is characterized in that the intrinsic indium gallium arsenic
Layer thickness is 1.5 μm.
5. graphene-based built in field indium gallium arsenic detector according to claim 2, which is characterized in that the indium of the n doping
Gallium arsenic layer thickness is 1 μm, and mixing Si concentration is 2 × 1018cm-3。
6. graphene-based built in field indium gallium arsenic detector according to claim 2, which is characterized in that the silica medium
Layer is with a thickness of 90nm~300nm.
7. graphene-based built in field indium gallium arsenic detector according to claim 2, which is characterized in that the single-layer graphene
Thickness degree is in 1nm or less.
8. graphene-based built in field indium gallium arsenic detector according to claim 2, which is characterized in that the source electrode and leakage
Electrode is the metal electrode that good Ohmic contact is formed with single-layer graphene layer.
9. graphene-based built in field indium gallium arsenic detector according to claim 2, which is characterized in that the back-gate electrode is
The metal electrode of good Ohmic contact is formed between InP substrate.
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| CN201811002938.1A CN109273554A (en) | 2018-08-30 | 2018-08-30 | A kind of graphene-based built in field indium gallium arsenic detector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114002515A (en) * | 2021-12-31 | 2022-02-01 | 南京高华科技股份有限公司 | Electric field sensor and preparation method thereof |
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Application publication date: 20190125 |