CN105633189A - 液相合成的超薄无机钙钛矿CsPbBr3纳米片可见光探测器 - Google Patents

液相合成的超薄无机钙钛矿CsPbBr3纳米片可见光探测器 Download PDF

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CN105633189A
CN105633189A CN201610048282.1A CN201610048282A CN105633189A CN 105633189 A CN105633189 A CN 105633189A CN 201610048282 A CN201610048282 A CN 201610048282A CN 105633189 A CN105633189 A CN 105633189A
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light detector
visible
cspbbr
nanometer sheet
electrode
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宋继中
董宇辉
李建海
薛洁
许蕾梦
王涛
曾海波
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Nanjing University of Science and Technology
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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Abstract

本发明公开了一种液相合成的超薄无机钙钛矿CsPbBr3纳米片可见光探测器,包括如下步骤:在干净的PET柔性衬底上沉积电极层;刻蚀沉积的电极层得到电极;取CsPbBr3纳米片的分散液在电极上成膜,制成所述的柔性的可见光探测器。该柔性可见光探测器表现出优异的性能,在532?nm的辐照下开关比大于103,且响应速度很快,达到微秒级别。其柔性性能优异,弯折多次性能依然稳定。

Description

液相合成的超薄无机钙钛矿CsPbBr3纳米片可见光探测器
技术领域
本发明涉及一种液相合成超薄无机钙钛矿CsPbBr3纳米片组装的柔性可见光探测器,属于光探测器领域。
技术背景
可见光探测器在可见光通讯、成像感应、生物医学传感等军事和工业领域均具有许多重大的应用。随着各领域技术的逐步发展,要求光电探测器具备低成本,高灵敏度等特点。有机无机杂化钙钛矿材料所具有的高量子效率,可溶液加工,波长易调等突出优势引起了各国研究者的大量关注,使得这种材料在太阳能电池,光电探测器,LED等光电器件中得到广泛应用。然而其稳定性差是限制其实际应用的最大障碍,我们需要既能保留这类材料的优异光电性能,又能具有更好稳定性的材料,全无机钙钛矿纳米晶材料的出现有助于解决这一问题。
全无机钙钛矿纳米晶把有机无机杂化钙钛矿材料的优异光电性能与无机钙钛矿材料的稳定性结合起来,具有优异的光吸收能力、可调的带隙等优点。这些优势使得其在光电探测器、光通讯等领域具有广阔的前景。
而二维材料的优势在于它具有原子级别厚度、高的载流子迁移率以及较好的稳定性,可用于各种超薄、柔性以及高性能的光电子领域。综合以上优势,二维超薄纳米片状的钙钛矿具有很广阔的前景和研究价值。
发明内容
本发明的目的在于提供一种液相合成的、超薄无机钙钛矿CsPbBr3纳米片可见光探测器。
本发明可通过如下技术方案实现,一种液相合成的超薄无机钙钛矿CsPbBr3纳米片可见光探测器,由如下步骤制备:
1)在干净的PET柔性衬底上沉积一定厚度的电极层;
2)刻蚀沉积的电极层得到一定间隔的电极;
3)取适量CsPbBr3纳米片的分散液在电极上成膜。
步骤1)中,所述电极层为ITO或Au;所述电极层的厚度为80~100nm。
步骤2)中,所述的电极间隔为3~20μm。
步骤3)中,所述的成膜采用旋涂法或者离心成膜法,旋涂转速为2000r/min,离心成膜转速为6000r/min;CsPbBr3纳米片的分散液采用的溶剂为甲苯,溶液的浓度为1.3*10-4mol/L。
本发明的优点是:1)本发明提供了一种液相合成的、超薄无机钙钛矿CsPbBr3纳米片组装的可见光探测器,制备工艺简单;2)本发明提供了一种柔性的全无机钙钛矿可见光探测器,其性能优异且柔性性能稳定;3)本发明的可见光探测器响应速度快,可达到几十微秒,满足快速响应的需求。
附图说明
图1为本发明实施例1所用的CsPbBr3纳米片的TEM透射图。
图2为本发明实施例1制备的可见光探测器结构示意图。
图3为本发明实施例1制备的可见光探测器响应度图谱。
图4为本发明实施例1制备可见光探测器的明暗电压-电流(I-V)曲线图。
图5为本发明实施例1制备可见光探测器的电流-时间响应(I-t)曲线图。
图6为本发明实施例1制备的可见光探测器的柔性稳定性表征图。
具体实施方式
以下通过具体的实施例对本发明作进一步的描述。
本发明是在PET衬底上沉积了一定间距的电极材料,然后通过旋涂或离心成膜的方法组装CsPbBr3纳米片薄膜,得到高性能的CsPbBr3无机钙钛矿纳米片柔性可见光探测器。
实施例1
本实施例所述的液相合成的、超薄无机钙钛矿CsPbBr3纳米片组装的可见光探测器,具体包括如下步骤:
1)在干净的PET柔性衬底上沉积80nm厚的Au电极材料;
2)刻蚀沉积的电极层得到间隔为20μm,长度为1cm的电极;
3)取适量CsPbBr3纳米片的分散液在电极层上通过离心法成膜,采用的CsPbBr3纳米片TEM透射图见图1,其结构示意图见图2,其响应度见图3,随着电压增加响应度依次提高,其明暗电压-电流关系见图4,电流-时间响应见图5,其响应速度很快,可达微秒级别,其柔性稳定性表征图见图6。
实施例2
与实施例1类似,区别在于,将实施例1的步骤1)中的电极厚度改为100nm,其他条件保持一致,制得CsPbBr3无机钙钛矿纳米晶可见光探测器。
实施例3
与实施例1类似,区别在于,将实施例1的步骤2)中的电极间距改为10nm,其他条件保持一致,制得CsPbBr3无机钙钛矿纳米晶可见光探测器。
实施例4
与实施例1类似,区别在于,将实施例1的步骤3)中的离心法成膜改为旋涂,其转速为2000r/min,其他条件保持一致,制得CsPbBr3无机钙钛矿纳米晶可见光探测器。

Claims (4)

1.一种CsPbBr3纳米片可见光探测器,其特征在于,由如下步骤制备:
1)在干净的PET柔性衬底上沉积电极层;
2)刻蚀沉积的电极层得到电极;
3)取CsPbBr3纳米片的分散液在电极上成膜。
2.如权利要求1所述的CsPbBr3纳米片可见光探测器,其特征在于,步骤1)中,所述电极层为ITO或Au;所述电极层的厚度为80~100nm。
3.如权利要求1所述的CsPbBr3纳米片可见光探测器,其特征在于,步骤2)中,电极间隔为3~20μm。
4.如权利要求1所述的CsPbBr3纳米片可见光探测器,其特征在于,步骤3)中,所述的成膜采用旋涂法或者离心成膜法,旋涂转速为2000r/min,离心成膜转速为6000r/min;CsPbBr3纳米片的分散液采用的溶剂为甲苯,溶液的浓度为1.3*10-4mol/L。
CN201610048282.1A 2016-01-22 2016-01-22 液相合成的超薄无机钙钛矿CsPbBr3纳米片可见光探测器 Pending CN105633189A (zh)

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CN106024923A (zh) * 2016-07-26 2016-10-12 南京工业大学 一种全溶液法制备全碳柔性光探测器及其制备方法
CN106006722A (zh) * 2016-06-24 2016-10-12 中国科学院合肥物质科学研究院 斜方相碘化铯铅单晶纳米线的制备方法和用途
CN106784162A (zh) * 2017-01-19 2017-05-31 西安交通大学 沉积CsPbBr3纳米片薄膜光电探测器的制备方法
CN106784147A (zh) * 2016-12-27 2017-05-31 南京理工大学 多孔增强高性能全无机钙钛矿可见光探测器制备方法
CN106847956A (zh) * 2017-03-08 2017-06-13 中国工程物理研究院材料研究所 一种基于全无机钙钛矿单晶的辐射探测器及其制备方法
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CN107722962A (zh) * 2016-08-12 2018-02-23 京东方科技集团股份有限公司 发光材料及其制备方法、纳米片膜材、背光源和显示装置
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CN109119495A (zh) * 2018-08-22 2019-01-01 西南交通大学 一种柔性光电探测器及其制备方法
CN109904243A (zh) * 2019-01-25 2019-06-18 南京理工大学 基于界面优化的类纸基柔性紫外光探测器及其制备方法
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