CN105632901A - 一种采用干式刻蚀方法获得碳化硅衬底的方法 - Google Patents
一种采用干式刻蚀方法获得碳化硅衬底的方法 Download PDFInfo
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- CN105632901A CN105632901A CN201610072249.2A CN201610072249A CN105632901A CN 105632901 A CN105632901 A CN 105632901A CN 201610072249 A CN201610072249 A CN 201610072249A CN 105632901 A CN105632901 A CN 105632901A
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- Prior art keywords
- gas
- silicon carbide
- etching
- reaction chamber
- vacuum
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000005530 etching Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 title claims abstract description 26
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 24
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 239000007789 gas Substances 0.000 claims abstract description 42
- 238000006243 chemical reaction Methods 0.000 claims abstract description 32
- 239000012159 carrier gas Substances 0.000 claims abstract description 9
- 238000001312 dry etching Methods 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 229910052756 noble gas Inorganic materials 0.000 claims description 2
- 238000003754 machining Methods 0.000 abstract description 3
- 238000005086 pumping Methods 0.000 abstract 8
- 238000010438 heat treatment Methods 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610072249.2A CN105632901B (zh) | 2016-02-02 | 2016-02-02 | 一种采用干式刻蚀方法获得碳化硅衬底的方法 |
Applications Claiming Priority (1)
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CN201610072249.2A CN105632901B (zh) | 2016-02-02 | 2016-02-02 | 一种采用干式刻蚀方法获得碳化硅衬底的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105632901A true CN105632901A (zh) | 2016-06-01 |
CN105632901B CN105632901B (zh) | 2018-05-25 |
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CN201610072249.2A Active CN105632901B (zh) | 2016-02-02 | 2016-02-02 | 一种采用干式刻蚀方法获得碳化硅衬底的方法 |
Country Status (1)
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CN (1) | CN105632901B (zh) |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54106100A (en) * | 1978-02-07 | 1979-08-20 | Sharp Corp | Vapor phase chemically depositing method for silicon carbide |
JPH10261615A (ja) * | 1997-03-17 | 1998-09-29 | Fuji Electric Co Ltd | SiC半導体の表面モホロジー制御方法およびSiC半導体薄膜の成長方法 |
CN102592976A (zh) * | 2012-03-22 | 2012-07-18 | 西安电子科技大学 | P型重掺杂碳化硅薄膜外延制备方法 |
WO2013027995A2 (en) * | 2011-08-22 | 2013-02-28 | Lg Innotek Co., Ltd. | Process of surface treatment for wafer |
CN103422164A (zh) * | 2013-08-13 | 2013-12-04 | 西安电子科技大学 | 一种N型4H-SiC同质外延掺杂控制方法 |
CN103578925A (zh) * | 2012-07-26 | 2014-02-12 | 住友电气工业株式会社 | 制造碳化硅衬底的方法 |
JP2014044975A (ja) * | 2012-08-24 | 2014-03-13 | Panasonic Corp | SiC基板のエッチング方法 |
CN103820768A (zh) * | 2014-03-11 | 2014-05-28 | 中国科学院半导体研究所 | 4H-SiC衬底上同质快速外延生长4H-SiC外延层的方法 |
CN104538290A (zh) * | 2014-12-31 | 2015-04-22 | 中国科学院半导体研究所 | 一种h2微刻蚀进行碳化硅离子激活的方法 |
CN104952708A (zh) * | 2014-03-24 | 2015-09-30 | 三菱电机株式会社 | 碳化硅半导体装置的制造方法 |
-
2016
- 2016-02-02 CN CN201610072249.2A patent/CN105632901B/zh active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54106100A (en) * | 1978-02-07 | 1979-08-20 | Sharp Corp | Vapor phase chemically depositing method for silicon carbide |
JPH10261615A (ja) * | 1997-03-17 | 1998-09-29 | Fuji Electric Co Ltd | SiC半導体の表面モホロジー制御方法およびSiC半導体薄膜の成長方法 |
WO2013027995A2 (en) * | 2011-08-22 | 2013-02-28 | Lg Innotek Co., Ltd. | Process of surface treatment for wafer |
CN102592976A (zh) * | 2012-03-22 | 2012-07-18 | 西安电子科技大学 | P型重掺杂碳化硅薄膜外延制备方法 |
CN103578925A (zh) * | 2012-07-26 | 2014-02-12 | 住友电气工业株式会社 | 制造碳化硅衬底的方法 |
JP2014044975A (ja) * | 2012-08-24 | 2014-03-13 | Panasonic Corp | SiC基板のエッチング方法 |
CN103422164A (zh) * | 2013-08-13 | 2013-12-04 | 西安电子科技大学 | 一种N型4H-SiC同质外延掺杂控制方法 |
CN103820768A (zh) * | 2014-03-11 | 2014-05-28 | 中国科学院半导体研究所 | 4H-SiC衬底上同质快速外延生长4H-SiC外延层的方法 |
CN104952708A (zh) * | 2014-03-24 | 2015-09-30 | 三菱电机株式会社 | 碳化硅半导体装置的制造方法 |
CN104538290A (zh) * | 2014-12-31 | 2015-04-22 | 中国科学院半导体研究所 | 一种h2微刻蚀进行碳化硅离子激活的方法 |
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Publication number | Publication date |
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CN105632901B (zh) | 2018-05-25 |
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Effective date of registration: 20170110 Address after: Tonghui trunk road 100176 Beijing city Daxing District economic and Technological Development Zone No. 17 hospital Applicant after: BEIJING CENTURY GOLDRAY SEMICONDUCTOR Co.,Ltd. Address before: Tonghui trunk road 101111 Beijing city Daxing District economic and Technological Development Zone No. 17 hospital Applicant before: BEIJING HUAJINCHUANGWEI ELECTRONICS Co.,Ltd. |
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Effective date of registration: 20231025 Address after: Room JZ2467, Yard 2, Junzhuang Road, Junzhuang Town, Mentougou District, Beijing, 102399 (cluster registration) Patentee after: Beijing Xingyun Lianzhong Technology Co.,Ltd. Address before: No. 17 Courtyard, Tonghui Ganqu Road, Economic and Technological Development Zone Patentee before: BEIJING CENTURY GOLDRAY SEMICONDUCTOR Co.,Ltd. |
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