CN105603516A - Heat cycling system of polycrystalline silicon ingot furnace - Google Patents
Heat cycling system of polycrystalline silicon ingot furnace Download PDFInfo
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- CN105603516A CN105603516A CN201610142652.8A CN201610142652A CN105603516A CN 105603516 A CN105603516 A CN 105603516A CN 201610142652 A CN201610142652 A CN 201610142652A CN 105603516 A CN105603516 A CN 105603516A
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- heat
- center
- crucible
- polycrystalline silicon
- graphite
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a heat cycling system of a polycrystalline silicon ingot furnace. A heating system corresponds to a center plate copper electrode and a center plate heater which are arranged in the middle of a crucible, the middle of the crucible is provided with a center plate heating groove corresponding to the center plate heater, and the center plate heater is arranged in the center plate heating groove; the lower surface of a heat dissipation platform is provided with a ring of a transverse insulating groove in the thickness direction, and the peripheral end face of the heat dissipation platform is provided with a ring of a longitudinal insulating groove in the width direction; the transverse insulating groove and the longitudinal insulating groove are both filled with insulating materials. According to the heat cycling system, rapid heating of silicon materials contained in the middle can be achieved, center heat is effectively controlled to be transmitted to the periphery and controlled to be transmitted to the four corners, therefore, the emission efficiency of the center heat is improved, and the emission efficiency of peripheral heat is reduced; accordingly, the uniformity of heat exchange is effectively controlled, the crystal growth uniformity is effectively controlled, the ingot quality of polycrystalline silicon is improved, and the product qualification rate of polycrystalline silicon is increased.
Description
Technical field
The present invention relates to a kind of polycrystalline silicon battery plate production technical field, particularly a kind of polysilicon castingIngot stove, especially a kind of upgrading of polycrystalline silicon ingot or purifying furnace heat circulating system.
Background technology
The production process of polycrystalline silicon battery plate comprises: crucible spraying → filler → ingot casting → cut into piece →Line is slit into sheet → cleaning-drying → detection → packaging, and wherein, casting polycrystalline silicon ingot is one important workSkill, the quality of polycrystalline silicon ingot casting will directly affect conversion efficiency and the quality of solar cell.
Casting polycrystalline silicon ingot, is that the crucible after filler is placed in ingot furnace, through furnace chamber find time,Heating, fusing, long crystalline substance, annealing, cooling after, complete the casting of silicon ingot. Polysilicon in prior artIn ingot furnace, be provided with top heater and side heater, top heater and side heater are made as oneBody, fixes by top copper electrode and body of heater, and top heater and side heater provide heat. ?In the whole process of polycrystal silicon ingot casting, top heater and side heater are by thermal-radiating sideFormula is to the outside silicon material heating in crucible, and outside is passed through in the intensification of the middle part silicon material in crucible completelyThe heat transmission of silicon material completes, and therefore, has following problem: 1. due to top heater and sideHeater heats the outside silicon material that is positioned at crucible by thermal-radiating mode, cannot be in cruciblePortion's silicon material heats, so the intensification of the middle part silicon material in crucible is completely by outside silicon material in crucibleHeat transmission realize, and the temperature difference of outside silicon material in crucible and middle part silicon material is very large, make earthenwareIt is just very long that in crucible, the temperature of silicon material reaches the even required time, thus waste electric energy; In long brilliant processIn, because the outside temperature difference in silicon material is large, the silicon material of fusing can be because there is annularly flow, the temperature difference in the temperature differenceLarger, annularly flow is larger, when long crystalline substance, can cause the destruction to crystal grain, affects silicon ingot quality.
In addition be to dispel the heat and realize long crystalline substance by the cooling platform of bottom in long brilliant process, still,This cooling platform is smooth tabular cooling platform in the prior art, because heat is from centre to looseDispelling the heat and cause heat radiation uneven in hot platform bottom and two ends, in long brilliant process, there will be convex crystal face, shapeBecome dislocation, deposition impurity, affected polysilicon quality, and four corners is easy to not retain moltenlyThe silicon materialization of changing is complete, therefore can not reach the effect of producing whole ingot.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of polycrystalline silicon ingot or purifying furnace, by its heatThe transformation of the circulatory system is to improve its heating and radiating efficiency.
For achieving the above object, technical scheme of the present invention is as follows:
A kind of polycrystalline silicon ingot or purifying furnace heat circulating system, described ingot furnace comprises: body of heater, on described body of heaterBe provided with aspirating hole, in described body of heater, be provided with heat-preservation guard shield, in described heat-preservation guard shield, be provided with crucible,The graphite guard shield of corresponding described crucible, top heater and the sidepiece heater of corresponding described graphite guard shieldAnd be positioned at the cooling platform of described graphite guard shield bottom, described top heater and sidepiece heater byBe arranged on the external heat copper electrode control at described body of heater top to realize graphite guard shield top and sidepieceExternal heat, described heat-preservation guard shield and cooling platform prop up by the graphite that is arranged on described bottom of furnace bodyPost supports, and described cooling platform supports described graphite guard shield, the backplanes support institute of described graphite guard shieldState crucible;
Described heating system also comprises the dull and stereotyped copper electrode in center and the center flat board at corresponding described crucible middle partHeater, the middle part of described crucible is provided with the dull and stereotyped heating in center of corresponding described center panel heaterGroove, described center panel heater is arranged in the dull and stereotyped heating tank in described center;
Described cooling platform through-thickness arranges the horizontal heat dam of a circle, described cooling fins at lower surfacePlatform broad ways arranges the longitudinal heat dam of a circle at surrounding end face; Described horizontal heat dam with longitudinally everyIn heat channel, be all filled with heat-barrier material;
Described graphite guard shield comprises the graphite side that is arranged on described crucible sidepiece, and described in being arranged onThe graphite base plate of crucible bottom, described graphite side is by draw-in groove and the described graphite base plate of length directionThe fixture block engagement connection of circumferentially protruding; On described graphite base plate, be positioned at circumferential fixture block inner side and be provided with collectionLiquid bath.
Wherein, the length of the dull and stereotyped heating tank in described center equals 1/2nd of described crucible width.
Wherein, the dull and stereotyped copper electrode in described center is arranged in described aspirating hole.
Wherein, the dull and stereotyped heating tank in described center is by the dull and stereotyped groove in the center that is arranged on described crucible centerWall surrounds, integrated the casting of base plate of the dull and stereotyped cell wall in described center and described crucible.
Wherein, the depth H 1 of described horizontal heat dam is less than the thickness H of described cooling platform and equals instituteState 1/2nd of cooling platform thickness H.
Wherein, the degree of depth of described longitudinal heat dam is less than 1/4th of described cooling platform width.
Wherein, the depth H 1 of described horizontal heat dam is less than described longitudinal heat dam and described cooling platformDistance H 2 between lower surface.
Wherein, the described collecting tank ring-type that is square, the lateral wall of described collecting tank is along short transverse and instituteThe madial wall of stating graphite side is concordant, and the internal diameter of described collecting tank is less than the external diameter of described crucible.
Wherein, the degree of depth of described collecting tank is less than 1/2nd of described graphite base plate thickness.
By technique scheme, polycrystalline silicon ingot or purifying furnace provided by the invention:
1. the heating system after its upgrading is because dull and stereotyped heating is introduced in the centre position at crucible,Can realize the Fast Heating of centre position silicon material, and because slab construction setting has reduced follow-up cuttingCut the generation of clout, greatly improved production efficiency and product percent of pass;
2. it passes through the upgrading to cooling system, thereby effectively control centre's heat is to the biography of surroundingDefeated, and control the transmission of heat to four corners, thus increase distributing efficiency and falling of middle heatLow surrounding heat distribute efficiency, thereby effectively control the uniformity of heat exchange, effectively control long brilliantThe uniformity also improves the ingot quality of polysilicon;
3. it passes through the protruding fixture block of a circle on graphite base plate, and coordinates collecting tank to recycle, evenThere is silicon liquid overflow situation, also can avoid silicon liquid and enter due to the blocking-up of the liquid collecting of collecting tank and fixture blockEnter ingot furnace, effectively guaranteed the processing safety of ingot furnace and reduced the wasting of resources.
Brief description of the drawings
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, will describe embodiment belowIn the accompanying drawing of required use be briefly described.
Fig. 1 is the disclosed polycrystalline silicon ingot or purifying furnace structural representation of the embodiment of the present invention;
Fig. 2 is the plan structure schematic diagram of the disclosed crucible of the embodiment of the present invention;
Fig. 3 is that the disclosed cooling platform master of the embodiment of the present invention looks sectional structure schematic diagram;
Fig. 4 is the structural representation of looking up of the disclosed cooling platform of the embodiment of the present invention;
Fig. 5 is the structural representation of the disclosed crucible assembly of the embodiment of the present invention.
Numeral in figure:
11. body of heater 12. heat-preservation guard shield 13. graphite pillars
14. cooling platform 15. graphite guard shield 16. top heater
17. sidepiece heater 18. external heat copper electrode 19. aspirating holes
Dull and stereotyped copper electrode 21. center panel heater 22. crucibles in 20. centers
The horizontal heat dam of the 23. centers dull and stereotyped heating tank 25. in dull and stereotyped cell wall 24. centers
26. longitudinal heat dam 27. graphite side 28. graphite base plates
29. fixture block 30. collecting tanks
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is enteredRow is described clearly and completely.
With reference to figure 1, polycrystalline silicon ingot or purifying furnace provided by the invention comprises: body of heater 11, arranges on body of heater 11There is aspirating hole 19, in body of heater 11, be provided with heat-preservation guard shield 12, in heat-preservation guard shield 12, be provided with crucible22, top heater 16 and the side of the graphite guard shield 15 of corresponding crucible 22, corresponding graphite guard shield 15Portion's heater 17 and be positioned at the cooling platform 14 of graphite guard shield 15 bottoms, top heater 16 withSidepiece heater 17 is controlled to realize stone by the external heat copper electrode 18 that is arranged on body of heater 11 topsThe external heat of China ink guard shield 15 tops and sidepiece, heat-preservation guard shield 12 and cooling platform 14 are by being arranged onThe graphite pillar 13 of body of heater 11 bottoms supports, and cooling platform 14 supports graphite guard shield 15, graphiteThe backplanes support crucible 22 of guard shield 15; Heating system also comprises the center flat board at corresponding crucible 22 middle partsCopper electrode 20Ji center panel heater 21, the dull and stereotyped copper electrode 20 in center is arranged in aspirating hole 19;The middle part of crucible 22 is provided with the dull and stereotyped heating tank 24 in panel heater 21 center, corresponding center, centerPanel heater 21 is arranged in the dull and stereotyped heating tank 24 in center.
With reference to figure 2, crucible 22 comprises base plate, sidewall and is positioned at center and is arranged on base plateThe dull and stereotyped cell wall 23 in center, the dull and stereotyped cell wall 23 in center surrounds the dull and stereotyped heating tank 24 in flat center,Integrated the casting of base plate of the dull and stereotyped cell wall 23 in center and crucible 22; The length of the dull and stereotyped heating tank 24 in centerEqual 1/2nd of crucible 22 width.
With reference to figure 3 and 4, cooling platform 14 through-thickness arrange the horizontal heat dam of a circle at lower surface25 is heat insulation to realize horizontal cross, and it is vertical that cooling platform 14 broad ways arrange a circle at surrounding end faceVertically longitudinally heat insulation to realize to heat dam 26; Laterally heat dam 25 is all filled out with longitudinally heat dam 26 is interiorBe filled with heat-barrier material; Wherein, the depth H 1 of horizontal heat dam 25 is less than the thickness H of cooling platform 14And equal 1/2nd of cooling platform 14 thickness H, longitudinally the degree of depth of heat dam 26 is less than cooling fins/ 4th of platform 14 width, laterally the depth H 1 of heat dam 25 is less than longitudinal heat dam 26 with looseDistance H 2 between hot platform 14 lower surfaces.
With reference to figure 5, graphite guard shield 15 comprises the graphite side 27 that is arranged on crucible 22 sidepieces, andBe arranged on the graphite base plate 28 of crucible 22 bottoms, graphite side 27 is by draw-in groove and the stone of length directionFixture block 29 engagement connections that China ink base plate 28 circumferentially protrudes; On graphite base plate 28, be positioned at circumferential fixture block29 inner sides are provided with collecting tank 30; Wherein, collecting tank 30 ring-type that is square, the outside of collecting tank 30Wall is concordant with the madial wall of graphite side 27 along short transverse, and the internal diameter of collecting tank 30 is less than crucible 22External diameter, the degree of depth of collecting tank 30 is less than 1/2nd of graphite base plate 28 thickness.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field can be realized or makeUse the present invention. To be aobvious for those skilled in the art to the multiple amendment of these embodimentAnd easily see, General Principle as defined herein can not depart from the spirit or scope of the present inventionIn situation, realize in other embodiments. Therefore, the present invention will can not be restricted to shown in this articleThese embodiment, but to meet consistent with principle disclosed herein and features of novelty the widestScope.
Claims (9)
1. a polycrystalline silicon ingot or purifying furnace heat circulating system, described ingot furnace comprises: body of heater, described body of heaterOn be provided with aspirating hole, in described body of heater, be provided with heat-preservation guard shield, in described heat-preservation guard shield, be provided with earthenwareThe graphite guard shield of crucible, corresponding described crucible, top heater and the sidepiece of corresponding described graphite guard shield addHot device and be positioned at the cooling platform of described graphite guard shield bottom, described top heater heats with sidepieceDevice by the external heat copper electrode control that is arranged on described body of heater top realizing graphite guard shield top andThe external heat of sidepiece, described heat-preservation guard shield and cooling platform are by being arranged on the stone of described bottom of furnace bodyChina ink pillar supports, and described cooling platform supports described graphite guard shield, and the base plate of described graphite guard shield props upSupport described crucible, it is characterized in that:
Described heating system also comprises the dull and stereotyped copper electrode in center and the center flat board at corresponding described crucible middle partHeater, the middle part of described crucible is provided with the dull and stereotyped heating in center of corresponding described center panel heaterGroove, described center panel heater is arranged in the dull and stereotyped heating tank in described center;
Described cooling platform through-thickness arranges the horizontal heat dam of a circle, described cooling fins at lower surfacePlatform broad ways arranges the longitudinal heat dam of a circle at surrounding end face; Described horizontal heat dam with longitudinally everyIn heat channel, be all filled with heat-barrier material;
Described graphite guard shield comprises the graphite side that is arranged on described crucible sidepiece, and described in being arranged onThe graphite base plate of crucible bottom, described graphite side is by draw-in groove and the described graphite base plate of length directionThe fixture block engagement connection of circumferentially protruding; On described graphite base plate, be positioned at circumferential fixture block inner side and be provided with collectionLiquid bath.
2. polycrystalline silicon ingot or purifying furnace heat circulating system according to claim 1, is characterized in that, instituteThe length of stating the dull and stereotyped heating tank in center equals 1/2nd of described crucible width.
3. polycrystalline silicon ingot or purifying furnace heat circulating system according to claim 2, is characterized in that, instituteThe dull and stereotyped copper electrode in the center of stating is arranged in described aspirating hole.
4. polycrystalline silicon ingot or purifying furnace heat circulating system according to claim 3, is characterized in that, instituteThe dull and stereotyped heating tank in the center of stating is surrounded by the dull and stereotyped cell wall in the center that is arranged on described crucible center, described inIntegrated the casting of base plate of the dull and stereotyped cell wall in center and described crucible.
5. polycrystalline silicon ingot or purifying furnace heat circulating system according to claim 1, is characterized in that, instituteThe depth H 1 of stating horizontal heat dam is less than the thickness H of described cooling platform and equals described cooling platform thick/ 2nd of a degree H.
6. polycrystalline silicon ingot or purifying furnace heat circulating system according to claim 5, is characterized in that, instituteThe degree of depth of stating longitudinal heat dam is less than 1/4th of described cooling platform width.
7. polycrystalline silicon ingot or purifying furnace heat circulating system according to claim 6, is characterized in that, instituteThe depth H 1 of stating horizontal heat dam is less than between described longitudinal heat dam and described cooling platform lower surfaceDistance H 2.
8. polycrystalline silicon ingot or purifying furnace heat circulating system according to claim 1, is characterized in that, instituteState the collecting tank ring-type that is square, the lateral wall of described collecting tank is along short transverse and described graphite sideMadial wall is concordant, and the internal diameter of described collecting tank is less than the external diameter of described crucible.
9. polycrystalline silicon ingot or purifying furnace heat circulating system according to claim 8, is characterized in that, instituteThe degree of depth of stating collecting tank is less than 1/2nd of described graphite base plate thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610142652.8A CN105603516A (en) | 2016-03-14 | 2016-03-14 | Heat cycling system of polycrystalline silicon ingot furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610142652.8A CN105603516A (en) | 2016-03-14 | 2016-03-14 | Heat cycling system of polycrystalline silicon ingot furnace |
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| CN105603516A true CN105603516A (en) | 2016-05-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610142652.8A Pending CN105603516A (en) | 2016-03-14 | 2016-03-14 | Heat cycling system of polycrystalline silicon ingot furnace |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201104102Y (en) * | 2007-08-23 | 2008-08-20 | 浙江精工科技股份有限公司 | Graphite crucible for polysilicon ingot furnace |
| CN102912414A (en) * | 2012-10-15 | 2013-02-06 | 天津英利新能源有限公司 | Polycrystalline silicon ingot production furnace and crucible thereof |
| CN204151459U (en) * | 2014-10-28 | 2015-02-11 | 江苏美科硅能源有限公司 | A kind of insulation ingot furnace |
| CN204151458U (en) * | 2014-10-09 | 2015-02-11 | 浙江硅宏电子科技有限公司 | A kind of polycrystalline ingot furnace |
-
2016
- 2016-03-14 CN CN201610142652.8A patent/CN105603516A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201104102Y (en) * | 2007-08-23 | 2008-08-20 | 浙江精工科技股份有限公司 | Graphite crucible for polysilicon ingot furnace |
| CN102912414A (en) * | 2012-10-15 | 2013-02-06 | 天津英利新能源有限公司 | Polycrystalline silicon ingot production furnace and crucible thereof |
| CN204151458U (en) * | 2014-10-09 | 2015-02-11 | 浙江硅宏电子科技有限公司 | A kind of polycrystalline ingot furnace |
| CN204151459U (en) * | 2014-10-28 | 2015-02-11 | 江苏美科硅能源有限公司 | A kind of insulation ingot furnace |
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Application publication date: 20160525 |
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