CN210134179U - Single crystal ingot furnace - Google Patents
Single crystal ingot furnace Download PDFInfo
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- CN210134179U CN210134179U CN201920312384.9U CN201920312384U CN210134179U CN 210134179 U CN210134179 U CN 210134179U CN 201920312384 U CN201920312384 U CN 201920312384U CN 210134179 U CN210134179 U CN 210134179U
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Abstract
The utility model provides a single crystal ingot furnace, including thermal-insulated cage, and locate the crucible in the thermal-insulated cage, radiating block and heater, the relative both sides of crucible are located to the heater, the bottom of crucible is located to the radiating block, the thermal-insulated cage includes the top heat insulating board, bottom heat insulating board and a plurality of lateral part heat insulating board, a plurality of lateral part heat insulating boards enclose to establish in order forming first open end and second open end, the bottom heat insulating board includes first bottom heat insulating board and the second bottom heat insulating board that sets up to crucible direction interval along the second open end, first bottom heat insulating board is used for the closing cap second open end, in the thermal-insulated cage is located to second bottom heat insulating board, the middle part of second bottom heat insulating board is equipped. A second bottom heat insulation plate is additionally arranged in the heat insulation cage, and an exhaust hole is formed in the middle of the second bottom heat insulation plate to control the heat discharge direction. Finally, the uniformity of the temperature in the crucible is improved, the dislocation of the silicon ingot is reduced, and the quality of the silicon ingot is improved.
Description
Technical Field
The utility model belongs to the technical field of monocrystalline silicon production, concretely relates to single crystal ingot furnace.
Background
At present, the size of a monocrystalline silicon ingot furnace in China is upgraded from the size of G5 to the size of G8. However, with the increase of the size of the ingot furnace, when the monocrystalline silicon is produced, the heat dissipation of the bottom of the crucible is faster than that of the side wall of the crucible, so that the temperature of the bottom of the crucible is lower than that of the side wall of the crucible, the uniformity of the temperature in the crucible is difficult to ensure, the convection effect and the impurity removal effect of a melt are poor, and finally the quality of the monocrystalline silicon is reduced.
At present, someone adopts to make heating device be used for directly heating the crucible at the crucible outer wall from inside to outside around heating device and heat preservation sleeve in proper order, and the heat preservation sleeve is used for preserving the heat. Energy waste caused by large-area heating is avoided, and heating effectiveness and uniformity of a temperature field are guaranteed. However, the above-mentioned device is complicated in structure and high in cost, and is not suitable for mass production.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides a single crystal ingot furnace adds second bottom heat insulating board in the thermal-insulated cage to set up the exhaust hole at the middle part of second bottom heat insulating board, with the thermal discharge direction of control. Therefore, heat can be accumulated at the bottom of the crucible, the temperature of the bottom of the crucible is increased, and the problem that the temperature of the bottom of the crucible is lower than that of the side wall of the crucible due to too fast heat dissipation is solved. Finally, the uniformity of the temperature in the crucible is improved, and the quality of the silicon ingot is improved.
The utility model provides a single crystal ingot furnace, which comprises a heat insulation cage, a crucible arranged in the heat insulation cage, a heat dissipation block and a heater, wherein the heater is arranged at two opposite sides of the crucible, the heat dissipation block is arranged at the bottom of the crucible, the heat insulation cage comprises a top heat insulation plate, a bottom heat insulation plate and a plurality of side heat insulation plates, the side heat insulation plates are arranged in an enclosing way to form a first opening end and a second opening end, the top heat insulation plate is used for covering the first opening end, the bottom heat insulation plate is used for covering the second opening end, the side heat insulation plates can move along the direction vertical to the bottom surface of the crucible, the opening direction of the crucible faces to the top heat insulation plate, the bottom comprises a first bottom heat insulation plate and a second bottom heat insulation plate which are arranged at intervals along the second opening end to the crucible direction, the first bottom heat insulation plate is used for covering the second opening end, the second bottom heat insulation plate is arranged in the heat insulation cage, and a vent hole is formed in the middle of the second bottom heat insulation plate.
The utility model discloses the first aspect provides a single crystal ingot furnace through add second bottom heat insulating board in thermal-insulated cage to set up the exhaust hole at the middle part of second bottom heat insulating board, with the thermal direction of discharging of control. So that the heat discharged from the side heat-insulating panels can move down along the side heat-insulating panels and continue to move toward the exhaust holes in the middle along the second bottom heat-insulating panels, and finally flow out of the exhaust holes. Therefore, heat can be accumulated at the bottom of the crucible, the temperature of the bottom of the crucible is increased, and the problem that the temperature of the bottom of the crucible is lower than that of the side wall of the crucible due to too fast heat dissipation is solved. Finally, the uniformity of the temperature in the crucible is improved, and the quality of the silicon ingot is improved.
Wherein the vertical distance between the first bottom insulation panel and the second bottom insulation panel is 50-200 mm.
Wherein the vertical distance between the first bottom heat insulation board and the side heat insulation board is 5-10mm, and the vertical distance between the top heat insulation board and the side heat insulation board is 5-10 mm.
And one end of the side heat-insulating plate, which is close to the second opening end, is provided with a fire blocking block, and the vertical distance between the second bottom heat-insulating plate and the fire blocking block is 5-10 mm.
Wherein the area of the exhaust holes accounts for 5-15% of the total area of the second bottom heat insulation plate.
Wherein the area of the exhaust hole is 3-30mm2。
Wherein the thickness of the first bottom thermal insulation panel and the second bottom thermal insulation panel is 40-100 mm.
Wherein, the shape of exhaust hole is triangle-shaped, square, polygon or circular.
And a support assembly is arranged between the first bottom heat insulation plate and the second bottom heat insulation plate so as to realize the spaced arrangement of the first bottom heat insulation plate and the second bottom heat insulation plate.
The single crystal ingot furnace further comprises a plurality of supporting columns, the supporting columns penetrate through the bottom heat insulation plate to be connected with the heat dissipation block, and the first bottom heat insulation plate and the second bottom heat insulation plate are fixedly connected with the supporting columns.
Drawings
In order to more clearly illustrate the technical solution in the embodiments of the present invention, the drawings required to be used in the embodiments of the present invention will be described below.
FIG. 1 is a schematic structural view of a single crystal ingot furnace in an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of the single crystal ingot furnace during exhausting in the embodiment of the present invention.
Reference numerals:
the heat insulation device comprises a heat insulation cage-1, a side heat insulation plate-11, a top heat insulation plate-12, a bottom heat insulation plate-13, a first bottom heat insulation plate-131, a second bottom heat insulation plate-132, an exhaust hole-1321, a crucible-2, a heater-3, a radiating block-4, a fire blocking block-5 and a support column-6.
Detailed Description
The following is a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations are also considered as the protection scope of the present invention.
Referring to fig. 1-2, an embodiment of the present invention provides a single crystal ingot furnace, including a thermal insulation cage 1, and a crucible 2, a heat dissipation block 4 and a heater 3 arranged in the thermal insulation cage 1, the heater 3 is arranged on two opposite sides of the crucible 2, the heat dissipation block 4 is arranged on the bottom of the crucible 2, the thermal insulation cage 1 includes a top thermal insulation plate 12, a bottom thermal insulation plate 13 and a plurality of side thermal insulation plates 11, a plurality of the side thermal insulation plates 11 are arranged to form a first open end and a second open end, the top thermal insulation plate 12 is used for covering the first open end, the bottom thermal insulation plate 13 is used for covering the second open end, a plurality of the side thermal insulation plates 11 can move along a direction perpendicular to the bottom surface of the crucible 2, the opening direction of the crucible 2 faces the top thermal insulation plate 12, the bottom thermal insulation plate 13 includes a first bottom 131 and a second bottom thermal insulation plate 131 arranged at intervals along the direction of the crucible 2, and a heater 3 A bottom insulating plate 132, the first bottom insulating plate 131 is used for covering the second open end, the second bottom insulating plate 132 is arranged in the heat insulation cage 1, and a vent 1321 is arranged in the middle of the second bottom insulating plate 132.
In the conventional monocrystalline silicon ingot furnace, the heat at the bottom of the crucible 2 is lost more quickly and more than the heat at the side wall of the crucible 2 due to the existence of the radiating block 4. Therefore, the temperature at the bottom of the crucible 2 will be lower than the temperature at the side wall of the crucible 2. Preferably, the bottom of crucible 2 near the sidewall of crucible 2 will have a lower temperature than the bottom of crucible 2 further from the sidewall of crucible 2, i.e., the bottom of crucible 2 will have a lower temperature on both sides than the center of the bottom of crucible 2, and thus the bottom of crucible 2 will have a "W" shape. Due to the non-uniformity of the temperature in the crucible 2, the produced silicon ingot will eventually have excessive dislocations and the quality will also be degraded.
The embodiment of the utility model provides a pair of single crystal ingot furnace through add second bottom heat insulating board 132 in thermal-insulated cage 1 to set up exhaust hole 1321 at the middle part of second bottom heat insulating board 132, with the thermal discharge direction of control. So that the heat discharged from the side heat insulating panels 11 can move down along the side heat insulating panels 11 and continue along the second bottom heat insulating panel 132 toward the middle exhaust holes 1321, and finally flow out of the exhaust holes 1321. Thus, heat is accumulated at the bottom of the crucible 2, and the temperature at the bottom of the crucible 2 is increased to compensate for the fact that the temperature at the bottom of the crucible 2 is lower than the temperature at the side wall of the crucible 2 due to too fast heat dissipation. Finally, the uniformity of the temperature in the crucible 2 is improved, the dislocation of the silicon ingot is reduced, and the quality of the silicon ingot is improved.
In the preferred embodiment of the present invention, the vertical distance between the first bottom heat-insulating board 131 and the second bottom heat-insulating board 132 is 50 to 200 mm. The first bottom heat insulating plate 131 and the vertical distance between the second bottom heat insulating plates 132 may affect the distance from the second bottom heat insulating plates 132 to the heat radiating block 4 at the bottom of the crucible 2. When the vertical distance between the first bottom heat insulating plate 131 and the second bottom heat insulating plate 132 is too large, the second bottom heat insulating plate 132 is too close to the heat dissipation block 4 at the bottom of the crucible 2, and the heat is too concentrated at this time, so that the temperature at the bottom of the crucible 2 is higher than the temperature at the side wall of the crucible 2. When the vertical distance between the first bottom heat insulating plate 131 and the second bottom heat insulating plate 132 is too small, the second bottom heat insulating plate 132 is too far away from the heat radiating block 4 at the bottom of the crucible 2, so that the temperature of the bottom of the crucible 2 is still lower than that of the sidewall of the crucible 2. Therefore, the vertical distance between the first bottom heat-insulating plate 131 and the second bottom heat-insulating plate 132 of the present invention is 50-200mm, so that the temperature in the crucible 2 is the same, and the uniformity of the temperature in the crucible 2 is improved. Preferably, the vertical distance between the first bottom heat insulation plate 131 and the second bottom heat insulation plate 132 is 70-180 mm. More preferably, the vertical distance between the first bottom insulation panel 131 and the second bottom insulation panel 132 is 100 and 150 mm.
In a preferred embodiment of the present invention, the vertical distance between the first bottom heat-insulating plate 131 and the side heat-insulating plate 11 is 5 to 10mm, and the vertical distance between the top heat-insulating plate 12 and the side heat-insulating plate 11 is 5 to 10 mm. Because the utility model discloses a plurality of lateral part heat insulating boards 11 can follow the direction removal of 2 bottom surfaces of perpendicular to crucible, reciprocate promptly, consequently, first bottom heat insulating board 131 with have gapped between top heat insulating board 12 and the lateral part heat insulating board 11, nevertheless the clearance is too big, can make the air enter in heat-insulating cage 1, further influence single crystal silicon ingot's quality. Preferably, the vertical distance between the first bottom heat insulation panel 131 and the side heat insulation panel 11 is 6-9mm, and the vertical distance between the top heat insulation panel 12 and the side heat insulation panel 11 is 6-9 mm. More preferably, the vertical distance between the first bottom heat insulation panel 131 and the side heat insulation panel 11 is 7-8mm, and the vertical distance between the top heat insulation panel 12 and the side heat insulation panel 11 is 7-8 mm.
In the preferred embodiment of the present invention, a fire stop block 5 is provided at one end of the side heat insulation plate 11 close to the second open end, and the vertical distance between the second bottom heat insulation plate 132 and the fire stop block 5 is 5-10 mm. The utility model discloses make second bottom heat insulating board 132 with vertical distance between the firestop piece 5 is 5-10mm, not only can make lateral part heat insulating board 11 reciprocate freely to can make more heats flow to the exhaust hole 1321 at middle part along second bottom heat insulating board 132, avoid the heat to flow from the both sides of second bottom heat insulating board 132, lead to the temperature of unable improvement crucible 2 bottom. Preferably, the vertical distance between the second bottom heat insulation plate 132 and the firestop block 5 is 6-9 mm. More preferably, the vertical distance between the second bottom heat insulation plate 132 and the firestop block 5 is 7-8 mm.
In a preferred embodiment of the present invention, the area of the exhaust holes 1321 accounts for 5% -15% of the total area of the second bottom insulation board 132. The area ratio of the vent 1321 affects the temperature of the bottom of the crucible 2, and if the area ratio of the vent 1321 is too small, heat is concentrated, and the temperature of the bottom of the crucible 2 is further increased. If the area ratio of the vent holes 1321 is too large, the heat discharge is accelerated, and the temperature of the bottom of the crucible 2 is lowered, failing to meet the intended requirement. Preferably, the area of the exhaust holes 1321 is 7 to 13% of the total area of the second bottom heat insulating panel 132. More preferably, the area of the exhaust holes 1321 is 9 to 11% of the total area of the second bottom heat insulating panel 132.
In the preferred embodiment of the present invention, the area of the exhaust hole 1321 is 3-30mm2. The area of the second bottom heat insulating plate 132 can be estimated from the area of the exhaust holes 1321 and the area ratio of the exhaust holes 1321. Preferably, the exhaust hole 1321 has an area of 7-25mm2. More preferably, the area of the exhaust hole 1321 is 15-20mm2。
In the preferred embodiment of the present invention, the thickness of the first bottom heat-insulating plate 131 and the second bottom heat-insulating plate 132 is 40 to 100 mm. The thickness of the first and second bottom insulation panels 131 and 132 may affect the insulation. The thickness is too thick, the heat preservation condition is too good, the heat discharge is slowed down, and the temperature at the bottom of the crucible 2 is too high. And the thickness is too thin, the heat preservation effect is reduced, the heat discharge is accelerated, and the temperature at the bottom of the crucible 2 is too low. Preferably, the thickness of the first and second bottom heat insulation panels 131 and 132 is 50 to 90 mm. More preferably, the thickness of the first and second bottom heat insulation panels 131 and 132 is 60 to 80 mm.
In a preferred embodiment of the present invention, the vent 1321 is triangular, square, polygonal or circular. Preferably, the vent 1321 is circular in shape.
In a preferred embodiment, a support assembly is provided between the first bottom insulating panel 131 and the second bottom insulating panel 132 to enable the first bottom insulating panel 131 and the second bottom insulating panel 132 to be spaced apart. The utility model discloses a supporting component makes first bottom heat insulating board 131 and second bottom heat insulating board 132 separate, realizes first bottom heat insulating board 131 with second bottom heat insulating board 132 realizes the interval setting. Preferably, the support assembly comprises a support block or column 6 or the like.
In the preferred embodiment of the present invention, the single crystal ingot furnace further comprises a plurality of supporting pillars 6, a plurality of the supporting pillars 6 pass through the bottom heat-insulating plate 13 and the heat-dissipating block 4 are connected, the first bottom heat-insulating plate 131 and the second bottom heat-insulating plate 132 are fixedly connected to the supporting pillars 6. The first and second bottom heat insulation plates 131 and 132 may be coupled to the support posts 6 to achieve a spaced arrangement. And one end of the supporting column 6 extending into the heat insulation cage 1 is connected with the radiating block 4, and the other end can be connected with other parts.
The foregoing detailed description has provided the embodiments of the present invention, and the principles and embodiments of the present invention are described and illustrated herein, which are merely provided to assist in understanding the methods and their core concepts of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the specific implementation and application scope, to sum up, the content of the present specification should not be understood as the limitation of the present invention.
Claims (10)
1. A single crystal ingot furnace is characterized by comprising a heat insulation cage, a crucible, a heat dissipation block and a heater, wherein the crucible, the heat dissipation block and the heater are arranged in the heat insulation cage, the heater is arranged on two opposite sides of the crucible, the heat dissipation block is arranged at the bottom of the crucible, the heat insulation cage comprises a top heat insulation plate, a bottom heat insulation plate and a plurality of side heat insulation plates, the side heat insulation plates are arranged in an enclosing mode to form a first opening end and a second opening end, the top heat insulation plate is used for covering the first opening end, the bottom heat insulation plate is used for covering the second opening end, the side heat insulation plates can move in a direction perpendicular to the bottom surface of the crucible, the opening direction of the crucible faces towards the top heat insulation plate, the bottom heat insulation plate comprises a first bottom heat insulation plate and a second bottom heat insulation plate which are arranged in an interval, the first bottom heat insulation plate is used for covering the second opening end, the second bottom heat insulation plate is arranged in the heat insulation cage, and a vent hole is formed in the middle of the second bottom heat insulation plate.
2. The single crystal ingot furnace of claim 1, wherein the vertical distance between the first bottom heat insulating plate and the second bottom heat insulating plate is 50mm to 200 mm.
3. The single crystal ingot furnace of claim 1, wherein the vertical distance between the first bottom heat insulating plate and the side heat insulating plates is 5-10mm, and the vertical distance between the top heat insulating plate and the side heat insulating plates is 5-10 mm.
4. The single crystal ingot furnace of claim 1, wherein the side heat shields are provided with a firestop block at an end adjacent to the second open end, and the vertical distance between the second bottom heat shield and the firestop block is 5-10 mm.
5. The single crystal ingot furnace of claim 1, wherein the area of the vent comprises 5% to 15% of the total area of the second bottom heat shield.
6. The single crystal ingot furnace of claim 5, wherein the vent holes have an area of 3-30mm2。
7. The single crystal ingot furnace of claim 1, wherein the first bottom heat insulating plate and the second bottom heat insulating plate have a thickness of 40 to 100 mm.
8. The single crystal ingot furnace of claim 1, wherein the vent holes are triangular, square or circular in shape.
9. The single crystal ingot furnace as set forth in claim 1, wherein a support assembly is disposed between the first bottom thermal shield and the second bottom thermal shield to space the first bottom thermal shield from the second bottom thermal shield.
10. The single crystal ingot furnace as set forth in claim 9, further comprising a plurality of support posts, wherein the plurality of support posts penetrate through the bottom heat shield to be connected with the heat sink, and wherein the first bottom heat shield and the second bottom heat shield are fixedly connected with the support posts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920312384.9U CN210134179U (en) | 2019-03-12 | 2019-03-12 | Single crystal ingot furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920312384.9U CN210134179U (en) | 2019-03-12 | 2019-03-12 | Single crystal ingot furnace |
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| CN210134179U true CN210134179U (en) | 2020-03-10 |
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| CN201920312384.9U Active CN210134179U (en) | 2019-03-12 | 2019-03-12 | Single crystal ingot furnace |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111394790A (en) * | 2020-04-26 | 2020-07-10 | 新余学院 | Low-impurity polycrystalline silicon ingot furnace |
| CN117230522A (en) * | 2023-11-15 | 2023-12-15 | 江苏鑫瑞崚新材料科技有限公司 | Metal single crystal preparation device |
-
2019
- 2019-03-12 CN CN201920312384.9U patent/CN210134179U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111394790A (en) * | 2020-04-26 | 2020-07-10 | 新余学院 | Low-impurity polycrystalline silicon ingot furnace |
| CN117230522A (en) * | 2023-11-15 | 2023-12-15 | 江苏鑫瑞崚新材料科技有限公司 | Metal single crystal preparation device |
| CN117230522B (en) * | 2023-11-15 | 2024-01-26 | 江苏鑫瑞崚新材料科技有限公司 | Metal single crystal preparation device |
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