CN105603515B - 一种用于多晶铸锭炉的导流装置 - Google Patents
一种用于多晶铸锭炉的导流装置 Download PDFInfo
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- CN105603515B CN105603515B CN201610082952.1A CN201610082952A CN105603515B CN 105603515 B CN105603515 B CN 105603515B CN 201610082952 A CN201610082952 A CN 201610082952A CN 105603515 B CN105603515 B CN 105603515B
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- guiding device
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- 238000009826 distribution Methods 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
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- 229910002804 graphite Inorganic materials 0.000 claims description 11
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 286
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (22)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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CN201710856055.6A CN107513763B (zh) | 2016-02-03 | 2016-02-03 | 一种用于多晶铸锭炉的导流装置 |
CN201710856086.1A CN107541775B (zh) | 2016-02-03 | 2016-02-03 | 一种用于多晶铸锭炉的导流装置 |
CN201610082952.1A CN105603515B (zh) | 2016-02-03 | 2016-02-03 | 一种用于多晶铸锭炉的导流装置 |
Applications Claiming Priority (1)
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CN201610082952.1A CN105603515B (zh) | 2016-02-03 | 2016-02-03 | 一种用于多晶铸锭炉的导流装置 |
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CN201710856086.1A Division CN107541775B (zh) | 2016-02-03 | 2016-02-03 | 一种用于多晶铸锭炉的导流装置 |
CN201710856055.6A Division CN107513763B (zh) | 2016-02-03 | 2016-02-03 | 一种用于多晶铸锭炉的导流装置 |
Publications (2)
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CN105603515A CN105603515A (zh) | 2016-05-25 |
CN105603515B true CN105603515B (zh) | 2017-12-08 |
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CN201710856055.6A Active CN107513763B (zh) | 2016-02-03 | 2016-02-03 | 一种用于多晶铸锭炉的导流装置 |
CN201710856086.1A Active CN107541775B (zh) | 2016-02-03 | 2016-02-03 | 一种用于多晶铸锭炉的导流装置 |
CN201610082952.1A Active CN105603515B (zh) | 2016-02-03 | 2016-02-03 | 一种用于多晶铸锭炉的导流装置 |
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CN201710856055.6A Active CN107513763B (zh) | 2016-02-03 | 2016-02-03 | 一种用于多晶铸锭炉的导流装置 |
CN201710856086.1A Active CN107541775B (zh) | 2016-02-03 | 2016-02-03 | 一种用于多晶铸锭炉的导流装置 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000158096A (ja) * | 1998-11-27 | 2000-06-13 | Mitsubishi Materials Corp | 鋳造装置 |
WO2012143385A1 (en) * | 2011-04-19 | 2012-10-26 | Rec Wafer Pte. Ltd. | An arrangement for manufacturing crystalline silicon ingots |
CN103556220A (zh) * | 2013-11-14 | 2014-02-05 | 乐山新天源太阳能科技有限公司 | 多晶硅铸锭炉 |
CN103896270A (zh) * | 2012-12-31 | 2014-07-02 | 江苏双良新能源装备有限公司 | 多晶硅高温尾气热交换器之高温尾气防冲件可调结构 |
CN104131344A (zh) * | 2014-07-17 | 2014-11-05 | 大连理工大学 | 高压吹气分离高杂质熔硅的装置及其方法 |
CN104952760A (zh) * | 2014-03-24 | 2015-09-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种进气装置及半导体加工设备 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8926751B2 (en) * | 2010-12-02 | 2015-01-06 | National Central University | Gas flow guiding device for use in crystal-growing furnace |
CN102517634B (zh) * | 2011-12-23 | 2014-12-17 | 江苏协鑫硅材料科技发展有限公司 | 多晶硅铸锭炉的气流控制结构及其使用方法 |
CN202626351U (zh) * | 2012-02-14 | 2012-12-26 | 江苏协鑫硅材料科技发展有限公司 | 一种用于多晶硅铸锭炉的进气排杂装置 |
CN103590103B (zh) * | 2013-10-24 | 2016-04-27 | 江苏大学 | 一种多晶硅铸锭炉氩气导流系统及其导流方法 |
CN103541003B (zh) * | 2013-11-14 | 2016-08-17 | 乐山新天源太阳能科技有限公司 | 多晶硅铸锭炉 |
CN203530488U (zh) * | 2013-11-14 | 2014-04-09 | 乐山新天源太阳能科技有限公司 | 多晶硅铸锭炉 |
-
2016
- 2016-02-03 CN CN201710856055.6A patent/CN107513763B/zh active Active
- 2016-02-03 CN CN201710856086.1A patent/CN107541775B/zh active Active
- 2016-02-03 CN CN201610082952.1A patent/CN105603515B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000158096A (ja) * | 1998-11-27 | 2000-06-13 | Mitsubishi Materials Corp | 鋳造装置 |
WO2012143385A1 (en) * | 2011-04-19 | 2012-10-26 | Rec Wafer Pte. Ltd. | An arrangement for manufacturing crystalline silicon ingots |
CN103896270A (zh) * | 2012-12-31 | 2014-07-02 | 江苏双良新能源装备有限公司 | 多晶硅高温尾气热交换器之高温尾气防冲件可调结构 |
CN103556220A (zh) * | 2013-11-14 | 2014-02-05 | 乐山新天源太阳能科技有限公司 | 多晶硅铸锭炉 |
CN104952760A (zh) * | 2014-03-24 | 2015-09-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种进气装置及半导体加工设备 |
CN104131344A (zh) * | 2014-07-17 | 2014-11-05 | 大连理工大学 | 高压吹气分离高杂质熔硅的装置及其方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107513763A (zh) | 2017-12-26 |
CN107541775B (zh) | 2019-09-20 |
CN107513763B (zh) | 2019-11-08 |
CN107541775A (zh) | 2018-01-05 |
CN105603515A (zh) | 2016-05-25 |
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Inventor after: Wang Huiyong Inventor after: Other inventors requested not to be named Inventor before: Chen Ge Inventor before: Other inventors requested not to be named |
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TA01 | Transfer of patent application right |
Effective date of registration: 20171031 Address after: 431800 No. 8, Jing Qian Road, Xinshi Town, Jingshan County, Jingmen, Hubei Applicant after: Jingshan new universal machine Co., Ltd. Address before: The new town of Fengtai County in Anhui province 232170 city of Huainan Chen Xiang Cun Hou Xiang Zi No. 112 Applicant before: Chen Ge |
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TA01 | Transfer of patent application right | ||
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Inventor after: Wang Huiyong Inventor before: Chen Ge Inventor before: Request not to publish name |
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Effective date of registration: 20171120 Address after: 431800 No. 8, Jing Qian Road, Xinshi Town, Jingshan County, Jingmen, Hubei Applicant after: Jingshan new universal machine Co., Ltd. Address before: The new town of Fengtai County in Anhui province 232170 city of Huainan Chen Xiang Cun Hou Xiang Zi No. 112 Applicant before: Chen Ge |