CN105598825A - Method for improving copper film thickness consistency during alkaline CMP of GLSI silicon through holes - Google Patents
Method for improving copper film thickness consistency during alkaline CMP of GLSI silicon through holes Download PDFInfo
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- CN105598825A CN105598825A CN201510987683.9A CN201510987683A CN105598825A CN 105598825 A CN105598825 A CN 105598825A CN 201510987683 A CN201510987683 A CN 201510987683A CN 105598825 A CN105598825 A CN 105598825A
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- polishing
- copper film
- film thickness
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to a method for improving the copper film thickness consistency during alkaline CMP of GLSI silicon through holes. The method comprises the specific steps that the initial copper film thickness of a polished chip is measured, and a polishing pad is selected; the flow rate of FA/O polishing liquid is adjusted to 150-300 ml/min, the working pressure of a polishing machine is adjusted to 12-40 kPa, the rotating speed of a polishing head is adjusted to 30-120 rpm, the rotating speed of a polishing disk is adjusted to 30-120 rpm, the polishing time is adjusted to 60-300 seconds, and polishing begins; the polished chip is taken out and cleaned thoroughly after the polishing is completed, multiple test points are selected to measure the residual copper film thickness after the polishing, and the polishing rate is converted based on the difference of the copper film thicknesses before and after the polishing. The method has the advantages that the surface mass transfer and temperature uniformity of the polished chip are improved under the synergistic effect of an FA/O surfactant and the rotating speed of the polishing head/polishing disk, accordingly the copper film consistency is controlled, and non-consistency within the chip can be reduced to be below 3%.
Description
Technical field
The invention belongs to chemically mechanical polishing field, relate in particular to the method for copper film consistency of thickness in a kind of GLSI of raising silicon through hole alkalescence CMP.
Background technology
Along with the development of integrated circuit, the integrated level of chip is more and more higher, and some challenges of chip interconnects technology are also following, and Moore's Law has been gone to the limit in traditional two dimension encapsulation, therefore needs to research and develop new route. Three-dimensional IC integrated technology is just sweeping across semi-conductor industry, and through-silicon-via (TSV) technology is the most important core technology that 3D silicon is integrated and 3DIC is integrated. Its advantage comprises minimizing interconnect delay, increases bandwidth, reduces power consumption and reduces cost, and it is by between chip and chip, make vertical conducting between wafer and wafer, realizes the state-of-the-art technology interconnecting between chip. Making TSV processing step used has: (1) forms through hole by being etched in silicon crystal; (2) deposit oxide isolation layer; (3) depositing metal adhesion layer/barrier/seed layers; (4) by electrochemical reaction toward cement copper metal in through hole; (5) by chemically mechanical polishing (CMP), copper unnecessary on oxide isolation layer and barrier layer are removed. The integration mode of TSV processing procedure is very many, but all faces a common difficult problem. The structure of TSV as shown in Figure 1, reaches due to copper is filled up the electroplating time that the through hole of 300 μ m need to be longer deeply, can be at the copper film of crystal column surface deposit a layer thickness inequality. Thickness can reach 60 μ m, is 60 times more than of conventional interconnection line cement copper film thickness. Unnecessary copper film must be removed fast in order to enhance productivity, therefore the CMP technique of the unnecessary copper film of silicon through hole is had higher requirement. Although the removal speed of copper film has met production requirement now, but the restriction of the factor such as temperature distributing disproportionation because polished silicon wafer diameter is increasing, in polishing process, removing the uniformity of copper film thickness fails to solve so far, conforming quality directly affects the electrical quantity of device and the yield rate of product and quality product rate, solves the development of consistency problem to silicon through hole technology and applies significant. CNIO2248477A discloses a kind of cmp method, it is characterized in that, comprise: utilize rubbing head clamping wafer described wafer is carried out to chemically mechanical polishing on polishing disk, wherein in described CMP process, described rubbing head rotation and along the radially back and forth translation of described polishing disk, described reciprocal translation covers the radius of described polishing disk, but the uniformity of copper film thickness in polishing process is not described.
US7037350B2 discloses the polishing fluid that contains the light amine of nitric acid and polymer particle abrasive. In this patent, only three embodiment have only listed the removal speed of polishing fluid to copper, and the uniformity that it is removed to speed is also not mentioned.
US20030008599A1 discloses a kind of cmp method. The method is introduced Oxidizing and Reducing Agents by the different phase at polishing process and is changed copper polishing speed, the saucerization of copper after reduction polishing. But to the uniformity of copper film thickness in its polishing process not mentioned.
US20100130101A1 discloses cmp method, and the method is by being incorporated into different polishing fluid compositions on polishing pad with two pipelines, and on-line mixing becomes polishing fluid for polishing. Regulate polishing speed by the flow that regulates heterogeneity. But to the uniformity of copper film thickness in its polishing process not mentioned.
Summary of the invention
The object of the invention is to overcome the deficiency of above-mentioned technology, and the method for copper film consistency of thickness in a kind of GLSI of raising silicon through hole alkalescence CMP is provided, the preferential absorption principle by FA/O surfactant in polishing fluid in polishing process can be controlled Temperature Distribution and the quality transmission of reaction surface; Rotating speed by rubbing head and polishing disk can be controlled polished silicon wafer linear velocity, and copper film uniformity is significantly improved.
The present invention for achieving the above object, by the following technical solutions: a kind of method that improves copper film consistency of thickness in GLSI silicon through hole alkalescence CMP, is characterized in that: concrete steps are as follows:
One, measure the initial copper film thickness of polished silicon wafer, select polishing pad and repair with trimmer, the finishing time is 60s;
Two, adjust flow velocity 150-300mL/min, operating pressure 12kPa-40kPa, the rotating speed 30rpm-120rpm of rubbing head and the rotating speed 30pm-120rpm of polishing disk of polishing machine of FA/O polishing fluid, polishing time 60s-300s, starts polishing;
Three, after polishing finishes, polished silicon wafer is taken out, clean up, choose multiple test points and measure the residual copper film thickness after polishing, converse polishing speed with the copper film thickness difference before and after polishing, investigate speed uniformity, plated copper film is removed speed uniformity and is represented by heterogeneity in sheet, and in sheet, more the bright removal speed of novel uniformity is better for heterogeneity, and after polishing, copper film consistency of thickness is better.
Described FA/O polishing fluid is mainly made up of abrasive grains, FA/O chelating agent, FA/O surfactant, hydrogen peroxide and ultra-pure water; Abrasive grains content is weight percentage 1-30%, the content of FA/O chelating agent is weight percentage 1-10%, the content of FA/O surfactant is weight percentage 0.01-5%, the content of oxidant is weight percentage 0.01-3%, water is supplied content to percentage by weight 100%, and its pH value is preferably 9-12.
Described abrasive grains is the silica hydrosol of particle diameter 20-100nm.
Described ultrapure resistivity of water is 18.1M Ω .cm.
Described trimmer is diamond truer.
Beneficial effect: compared with prior art, can make polished surface adsorbate process the physical absorption state of easy cleaning in cmp method of the present invention, be conducive to the removal of surface contamination thing, reduce damage layer simultaneously. In addition, the rotating speed that rubbing head and polishing disk are set can make the linear velocity of polished silicon wafer reach optimal value, temperature and the quality transmission of polished silicon wafer margin and center are all reached unanimity, under the synergy of FA/O surfactant and rubbing head/polishing disk rotating speed, improve the uniformity of polished silicon wafer surface quality, thereby control the uniformity of copper film polishing speed, can make heterogeneity in sheet be down to below 3%.
Brief description of the drawings
Fig. 1 is the profile of TSV structure;
Fig. 2 adds activating agent in polishing, on wafer, the schematic diagram of speed difference appears in jog position.
Detailed description of the invention
Describe the specific embodiment of the present invention in detail below in conjunction with preferred embodiment.
The method that the invention provides copper film consistency of thickness in a kind of GLSI of raising silicon through hole alkalescence CMP, concrete steps are as follows:
One, with the initial copper film thickness of CornellRESMAP463FOUP four-point probe measurment polished silicon wafer, to select polishing pad and repair with trimmer, the finishing time is 60s;
Two, adjust flow velocity 150-300mL/min, operating pressure 12kPa-40kPa, the rotating speed 30rpm-120rpm of rubbing head and the rotating speed 30pm-120rpm of polishing disk of polishing machine of FA/O polishing fluid, polishing time 60s-300s, starts polishing;
Three, after polishing finishes, polished silicon wafer is taken out, clean up, choose multiple test points and measure the residual copper film thickness after polishing, converse polishing speed with the copper film thickness difference before and after polishing, investigate speed uniformity, plated copper film is removed speed uniformity and is represented by heterogeneity in sheet, and in sheet, more the bright removal speed of novel uniformity is better for heterogeneity, and after polishing, copper film consistency of thickness is better.
Described FA/O polishing fluid is mainly made up of abrasive grains, FA/O chelating agent, FA/O surfactant, hydrogen peroxide and ultra-pure water; Abrasive grains content is weight percentage 1-30%, the content of FA/O chelating agent is weight percentage 1-10%, the content of FA/O surfactant is weight percentage 0.01-5%, the content of oxidant is weight percentage 0.01-3%, water is supplied content to percentage by weight 100%, and its pH value is preferably 9-12. Described abrasive grains particle diameter is 20-100nm.
Described ultrapure resistivity of water is 18.1M Ω .cm.
FA/O polishing fluid preparation method: by other components mixing and stirring according to the above ratio except oxidant, oxidizer before using, stirs and can use.
Polishing pad adopts American I C1000-A2 type polishing pad. Described trimmer is diamond truer.
Embodiment 1
Preparation 2kgFA/O polishing fluid, carries out chemically mechanical polishing.
Get 1000g particle diameter 80nm silica hydrosol, add while stirring 50gFA/O II type chelating agent, then add while stirring 15gFA/O I type surfactant, join while stirring afterwards in deionized water 927.5g, finally add respectively while stirring 7.5g hydrogen peroxide; Polished silicon wafer is cleaned with absolute alcohol, and water is loaded into polished silicon wafer on polishing machine platform after rinsing residual alcohol well. Operating pressure: 27.4kpa; Rubbing head/polishing disk rotating speed: 65/60rpm; Flow: 225mL/min, polishing time 180s. Polishing finishes rear taking-up polished silicon wafer, and first water is rinsed well, water is dried up with nitrogen afterwards, polished silicon wafer is put into dustless box and send to sensing chamber. Result is: copper film is removed speed 1.94 μ m/min; In sheet, heterogeneity is 2.9%.
Embodiment 2
Preparation 2kgFA/O polishing fluid, carries out chemically mechanical polishing.
Get 1000g particle diameter 80nm silica hydrosol, add while stirring 50gFA/O II type chelating agent, then add while stirring 15gFA/O I type surfactant, join while stirring afterwards in deionized water 927.5g, finally add respectively while stirring 7.5g hydrogen peroxide; Polished silicon wafer is cleaned with absolute alcohol, and water is loaded into polished silicon wafer on polishing machine platform after rinsing residual alcohol well. Operating pressure: 27.4kpa; Rubbing head/polishing disk rotating speed: 85/80rpm; Flow: 225mL/min, polishing time 180s. Polishing finishes rear taking-up polished silicon wafer, and first water is rinsed well, water is dried up with nitrogen afterwards, polished silicon wafer is put into dustless box and send to sensing chamber. Result is: copper film is removed speed 1.92 μ m/min; In sheet, heterogeneity is 3.2%.
Embodiment 3
Preparation 2kgFA/O polishing fluid, carries out chemically mechanical polishing.
Get 1000g particle diameter 80nm silica hydrosol, add while stirring 50gFA/O II type chelating agent, then add while stirring 15gFA/O I type surfactant, join while stirring afterwards in deionized water 927.5g, finally add respectively while stirring 7.5g hydrogen peroxide; Polished silicon wafer is cleaned with absolute alcohol, and water is loaded into polished silicon wafer on polishing machine platform after rinsing residual alcohol well. Operating pressure: 27.4kpa; Rubbing head/polishing disk rotating speed: 105/100rpm; Flow: 225mL/min, polishing time 180s. Polishing finishes rear taking-up polished silicon wafer, and first water is rinsed well, water is dried up with nitrogen afterwards, polished silicon wafer is put into dustless box and send to sensing chamber. Result is: copper film is removed speed 1.91 μ m/min; In sheet, heterogeneity is 3.7%.
Embodiment 4
Preparation 2kgFA/O polishing fluid, carries out chemically mechanical polishing.
Get 1000g particle diameter 80nm silica hydrosol, add while stirring 50gFA/O II type chelating agent, then join while stirring in deionized water 942.5g, finally add respectively while stirring 7.5g hydrogen peroxide; Polished silicon wafer is cleaned with absolute alcohol, and water is loaded into polished silicon wafer on polishing machine platform after rinsing residual alcohol well. Operating pressure: 27.4kpa; Rubbing head/polishing disk rotating speed: 65/60rpm; Flow: 225mL/min, polishing time 180s. Polishing finishes rear taking-up polished silicon wafer, and first water is rinsed well, water is dried up with nitrogen afterwards, polished silicon wafer is put into dustless box and send to sensing chamber. Result is: copper film is removed speed 1.84 μ m/min; In sheet, heterogeneity is 11%.
Embodiment 5
Preparation 2kgFA/O polishing fluid, carries out chemically mechanical polishing.
Get 1000g particle diameter 80nm silica hydrosol, add while stirring 50gFA/O II type chelating agent, then join while stirring in deionized water 942.5g, finally add respectively while stirring 7.5g hydrogen peroxide; Polished silicon wafer is cleaned with absolute alcohol, and water is loaded into polished silicon wafer on polishing machine platform after rinsing residual alcohol well. Operating pressure: 27.4kpa; Rubbing head/polishing disk rotating speed: 80/40rpm; Flow: 225mL/min, polishing time 180s. Polishing finishes rear taking-up polished silicon wafer, and first water is rinsed well, water is dried up with nitrogen afterwards, polished silicon wafer is put into dustless box and send to sensing chamber. Result is: copper film is removed speed 1.69 μ m/min; In sheet, heterogeneity is 17%.
FA/O II type chelating agent, FA/O I type surfactant is Jingling Microelectric Material Co., Ltd., Tianjin commercial goods.
Operation principle
By the low surface tension in polishing fluid with sprawl effect and effectively improve quality and transmit uniformity and Temperature Distribution uniformity, prevent the appearance of the 300mm wafer epirelief heart, the recessed heart and the limit phenomenon of collapsing, simultaneously in CMP process, described rubbing head rotation and along the radially back and forth translation and cover the radius of polishing disk of described polishing disk, make the linear velocity convergence optimal value of polished silicon wafer, with the same function of FA/O surfactant and rubbing head/polishing disk rotating speed, uniformity is significantly improved. Realize overall planarization with this; The concavo-convex difference of local silicon through hole and medium, by the preferential absorption principle of FA/O surfactant, at the preferential adsorption activity agent molecule of recess layer, stops the quality transmission of recess, realizes two-forty, thereby realize local planarization and protrude under the condition of CMP.
Wherein the mechanism of action of Surfactant Effect absorption is: first it is scattered in water, in the time using silicon through hole copper film that surface energy is very high and newly throw minute surface, it is preferentially adsorbed on surface, cause is to have large molecule, between it and surface, be adsorbed as physical absorption, it can meet the requirement that reduces fresh surface energy, is easy to again the cleaning after absorption. When polishing, add activating agent, due to the low surface tension of activating agent with sprawl effect, accelerated the quality transmission of reactant and product.
Referring to 1,2,3 places in accompanying drawing 2 is damage peak, and it also has and remove speed around except the oriented removal rates that goes down, and 4,5,6,7 places are recess in Fig. 2, the only oriented removal rates that goes down, there is accelerating removal effect in peak place like this, realize low damage, high even curface.
Above-mentioned detailed description of the method for copper film consistency of thickness in this kind of GLSI of raising silicon through hole alkalescence CMP being carried out with reference to embodiment; illustrative instead of determinate; can list several embodiment according to institute's limited range; therefore in the variation and the amendment that do not depart under general plotting of the present invention, within should belonging to protection scope of the present invention.
Claims (5)
1. improve a method for copper film consistency of thickness in GLSI silicon through hole alkalescence CMP, its spyLevy and be: concrete steps are as follows:
One, measure the initial copper film thickness of polished silicon wafer, select polishing pad and with trimmer finishing, repairThe whole time is 60s;
Two, adjust the flow velocity 150-300mL/min of FA/O polishing fluid, the operating pressure of polishing machineRotating speed 30rpm-the 120rpm of 12kPa-40kPa, rubbing head and the rotating speed of polishing disk30pm-120rpm, polishing time 60s-300s, starts polishing;
Three, after polishing finishes, polished silicon wafer is taken out, clean up, choose multiple test points and measureResidual copper film thickness after polishing, converses polishing speed with the copper film thickness difference before and after polishing, investigatesSpeed uniformity, plated copper film is removed speed uniformity and is represented by heterogeneity in sheet, non-homogeneous in sheetMore the bright removal speed of novel uniformity is better for property, and after polishing, copper film consistency of thickness is better.
2. copper film thickness one in raising GLSI silicon through hole alkalescence CMP according to claim 1The method of causing property, is characterized in that: described FA/O polishing fluid mainly by abrasive grains, FA/O chelating agent,FA/O surfactant, hydrogen peroxide and ultra-pure water composition; Abrasive grains content is weight percentage 1The content of-30%, FA/O chelating agent is weight percentage 1-10%, the content of FA/O surfactantBe weight percentage 0.01-5%, the content of oxidant is weight percentage 0.01-3%, and water is mendedFoot content is to percentage by weight 100%, and its pH value is 9-12.
3. copper film thickness one in raising GLSI silicon through hole alkalescence CMP according to claim 2The method of causing property, is characterized in that: described abrasive grains is the silica water of particle diameter 20-100nmColloidal sol.
4. copper film thickness one in raising GLSI silicon through hole alkalescence CMP according to claim 2The method of causing property, is characterized in that: described ultrapure resistivity of water is 18.1M Ω .cm.
5. copper film thickness one in raising GLSI silicon through hole alkalescence CMP according to claim 1The method of causing property, is characterized in that: described trimmer is diamond truer.
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| CN201510987683.9A CN105598825A (en) | 2015-12-24 | 2015-12-24 | Method for improving copper film thickness consistency during alkaline CMP of GLSI silicon through holes |
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| CN201510987683.9A CN105598825A (en) | 2015-12-24 | 2015-12-24 | Method for improving copper film thickness consistency during alkaline CMP of GLSI silicon through holes |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115020222A (en) * | 2022-03-21 | 2022-09-06 | 康劲 | Method for adjusting copper and medium rate selection ratio by using rotating speed in GLSI preparation |
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| CN1220201A (en) * | 1997-10-22 | 1999-06-23 | 伊利诺斯工具工程有限公司 | Metal and fiberglass cleaning and polishing article |
| US20030203709A1 (en) * | 2002-04-30 | 2003-10-30 | Cheng-An Peng | Method of improving uniformity control on wafers during chemical mechanical polishing |
| CN101966688A (en) * | 2010-07-21 | 2011-02-09 | 河北工业大学 | Low-pressure CMP (Chemico-mechanical Polishing) method for grand-scale integrated circuit copper wiring surface |
| CN102690607B (en) * | 2007-02-27 | 2015-02-11 | 日立化成株式会社 | Metal polishing slurry and application thereof |
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2015
- 2015-12-24 CN CN201510987683.9A patent/CN105598825A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1220201A (en) * | 1997-10-22 | 1999-06-23 | 伊利诺斯工具工程有限公司 | Metal and fiberglass cleaning and polishing article |
| US20030203709A1 (en) * | 2002-04-30 | 2003-10-30 | Cheng-An Peng | Method of improving uniformity control on wafers during chemical mechanical polishing |
| CN102690607B (en) * | 2007-02-27 | 2015-02-11 | 日立化成株式会社 | Metal polishing slurry and application thereof |
| CN101966688A (en) * | 2010-07-21 | 2011-02-09 | 河北工业大学 | Low-pressure CMP (Chemico-mechanical Polishing) method for grand-scale integrated circuit copper wiring surface |
Non-Patent Citations (1)
| Title |
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| 李炎等: "铜膜高去除速率CMP碱性抛光液的研究", 《表而技术》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115020222A (en) * | 2022-03-21 | 2022-09-06 | 康劲 | Method for adjusting copper and medium rate selection ratio by using rotating speed in GLSI preparation |
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