CN101901783B - Method for cleaning chip surface after polishing aluminum wire in super large scale integrated circuit - Google Patents
Method for cleaning chip surface after polishing aluminum wire in super large scale integrated circuit Download PDFInfo
- Publication number
- CN101901783B CN101901783B CN2010102316778A CN201010231677A CN101901783B CN 101901783 B CN101901783 B CN 101901783B CN 2010102316778 A CN2010102316778 A CN 2010102316778A CN 201010231677 A CN201010231677 A CN 201010231677A CN 101901783 B CN101901783 B CN 101901783B
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- Prior art keywords
- polishing
- water
- throwing
- chip surface
- aluminum wire
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- 238000005498 polishing Methods 0.000 title claims abstract description 51
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000004140 cleaning Methods 0.000 title claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000007788 liquid Substances 0.000 claims abstract description 20
- 230000007935 neutral effect Effects 0.000 claims abstract description 14
- 238000003756 stirring Methods 0.000 claims abstract description 12
- 239000004094 surface-active agent Substances 0.000 claims abstract description 11
- 238000005260 corrosion Methods 0.000 claims abstract description 9
- 230000007797 corrosion Effects 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 9
- 239000003112 inhibitor Substances 0.000 claims abstract 2
- 239000002738 chelating agent Substances 0.000 claims description 9
- 238000000637 aluminium metallisation Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 abstract description 5
- 229910021641 deionized water Inorganic materials 0.000 abstract description 5
- 239000013522 chelant Substances 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract 1
- 238000005303 weighing Methods 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 8
- 230000003628 erosive effect Effects 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 239000012530 fluid Substances 0.000 description 6
- 229910021645 metal ion Inorganic materials 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Detergent Compositions (AREA)
Abstract
The invention relates to a method for cleaning a chip surface after polishing an aluminum wire in a super large scale integrated circuit, which is characterized by comprising the following steps of: preparing a water polishing liquid; weighing deionized water in weight percentage, adding 0.5-5% of surfactant, 0.1-5% of FA/O chelant type II and 0.01-5% of FA/O rust inhibitor type II while uniformly stirring, and preparing into a neutral water polishing liquid after uniform stirring; and after the chemical mechanical polishing (CMP) of the aluminum wire, immediately polishing the workpiece by using the neutral water polishing liquid in a high flow method so as to clean the surface. The invention has the advantage that water polishing is used before a polishing disk stops rotating after CMP, high flow water polishing is used to clean the chip surface, and no corrosion on equipment is produced; non-uniformly distributed polishing liquid and large particles remaining on the chip surface can be washed away quickly, so that a clean and perfect polishing surface can be obtained.
Description
Technical field
The invention belongs to polishing technology, relate in particular to a kind of chip surface after polishing aluminum wire in super large scale integrated circuit clean treatment method.
Background technology
At present, use maximum integrated circuits and be still the above product of 90 nanometers, its wiring metal is an aluminium.Chemico-mechanical polishing (CMP) technology is a very important link in the very lagre scale integrated circuit (VLSIC) multilayer wiring technology; Surface smoothness, roughness and surperficial pickup after the chemico-mechanical polishing (CMP) of ULSI multilayer aluminium wiring directly has influence on following one deck wiring of aluminium; Influence breakdown characteristics, interfacial state and the minority carrier life time of circuit, be directly connected to the performance quality and the rate of finished products of IC device.In the CMP process, can introduce large amount of organic, particle, especially heavy metal ion.Because metallic aluminium is more active, the surface that CMP is newly exposed is easy to oxidized, behind the CMP the residual polishing fluid of crystal face still with aluminium generation chemical reaction.Because the surface energy that CMP is newly exposed is very high, bulky grain and the metal ion around the absorption very easily, and behind CMP, form chemisorbed with the pickup thing in very short time, and be difficult to remove, pollute; Because the residual polishing fluid skewness of wafer surface behind the CMP, add that surface adsorption is oarse-grained to stop, therefore; Chemical corrosion is inhomogeneous on the surface, forms the heterogeneity pit, and oxidation is also inhomogeneous; Form non-homogeneousization oxidation, reduce surface quality and do not reach requirement.Traditional CMP post-processing approach is, after CMP finishes, lifts polishing disk and use deionized water rinsing, because time lag, and only use deionized water rinsing, and treatment effect is undesirable, and organic substance, bulky grain and metal ion stain seriously.
Summary of the invention
The present invention is in order to overcome deficiency of the prior art; A kind of simple and easy to do, pollution-free, clean chip surface after polishing aluminum wire in super large scale integrated circuit clean treatment method is provided; After the aluminum wire in super large scale integrated circuit wafer polishing finishes; The method of using neutral water throwing immediately instead reduces wafer surface ability and surface tension, avoids unsymmetrical corrosion and particle, adsorption of metal ions and bonding.
The present invention realizes that through following technical scheme a kind of chip surface after polishing aluminum wire in super large scale integrated circuit clean treatment method is characterized in that: concrete steps are following for realizing above-mentioned purpose,
(1) preparation liquid throwing water: count by weight (part)
Remove ionized water, add surfactant 0.5%-5% while stirring, FA/OII type chelating agent 0.1-5%, FA/O II type resistance erosion (oxygen) agent 0.01-5% is prepared into neutral liquid throwing water after stirring;
(2) do not lift polishing disk after the polishing in the aluminium metallization chemical mechanical polishing operation and use above-mentioned neutral liquid throwing water to adopt the method for big flow that workpiece is carried out water throwing immediately, so that surface cleaning.
The flow of the big flow water throwing of said neutral liquid throwing water is 1000ml/min～5000ml/min, and the time is 0.5～2 minute, and workpiece pressure is zero or only keeps the pressure of polishing disk own wt to workpiece during water throwing.
Beneficial effect: do not stop the polishing disk rotation behind the CMP and promptly use water throwing instead; Select the neutral aqueous solution that contains surfactant, chelating agent, resistance erosion (oxygen) agent etc. for use; Carry out big flow water throwing and come the clean wafer surface; Equipment is not had corrosion, and can the polishing fluid that residue in the wafer surface skewness and organic substance, bulky grain be washed away rapidly, can obtain cleaning, perfect polished surface; Select for use surfactant that chip surface after polishing tension force is reduced rapidly, make the aqueous solution, improve the cleaning chip surface effect in the wafer surface uniform spreading; The chelating agent of selecting for use can with the metal remained ion formation chemical bond that reacts, generate the big molecule chelate of solubility, effectively control metal ion and adsorb, in big flow aqueous solution effect disengaging wafer surface down in wafer surface; Resistance erosion (oxygen) agent of selecting for use can form the unimolecule passivating film at chip surface after polishing, stops the polishing fluid of wafer surface uneven distribution to continue to form non-uniform corrosion and oxidation with the matrix reaction, improves the perfection of chip surface after polishing.
Embodiment
Below in conjunction with preferred embodiment, to details are as follows according to embodiment provided by the invention:
A kind of chip surface after polishing aluminum wire in super large scale integrated circuit clean treatment method, concrete steps are following,
(1) preparation liquid throwing water: count by weight (part)
Remove ionized water, add surfactant 0.5%-5% while stirring, FA/OII type chelating agent 0.1-5%, FA/O II type resistance erosion (oxygen) agent 0.01-5% is prepared into neutral liquid throwing water after stirring;
(2) do not lift polishing disk after the polishing in the aluminium metallization chemical mechanical polishing operation and use above-mentioned neutral liquid throwing water to adopt the method for big flow that workpiece is carried out water throwing immediately, so that surface cleaning.
The flow of the big flow water throwing of said neutral liquid throwing water is 1000ml/min～5000ml/min, and the time is 0.5～2 minute, and workpiece pressure is zero or only keeps the pressure of polishing disk own wt to workpiece during water throwing.
Described surfactant is the commercially available FA/O I of Jingling Microelectric Material Co., Ltd., Tianjin type surfactant, O
π-7 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
7-H), O
π-10 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
10-H) or JFC a kind of.
Said FA/O II type chelating agent is Jingling Microelectric Material Co., Ltd., Tianjin commercial goods.
Said FA/O II type resistance erosion (oxygen) agent, concentration is 0.01～5%.Be Jingling Microelectric Material Co., Ltd., Tianjin commercial goods.
Embodiment 1
The clean method of handling of chip surface after polishing aluminum wire in super large scale integrated circuit
Remove ionized water 3000g, put into FA/O I type surfactant 100g while stirring, FA/O II type chelating agent 50g claims that then 5g resistance erosion (oxygen) agent adds aforesaid liquid with 200g deionized water dilution back, and dissolving stirs fast.After CMP finishes, use above-mentioned liquid throwing water immediately instead and carried out water throwing 1 minute, observe any surface finish and do not have corrosion figure and defective such as vaporific with the flow of 1000ml/min.
Embodiment 2
The clean method of handling of chip surface after polishing aluminum wire in super large scale integrated circuit
Remove ionized water 3400g, put into FA/O I type surfactant 100g while stirring, FA/O II type chelating agent 50g claims that then 10g resistance erosion (oxygen) agent adds aforesaid liquid with 200g deionized water dilution back, and dissolving stirs fast.After CMP finishes, adopt above-mentioned liquid throwing water to carry out water throwing 0.6 minute immediately, observe any surface finish and do not have corrosion figure and defective such as vaporific with the flow of 4000ml/min.
Adopt acting as of technology:
Phenomenons such as surface energy height, big, the residual polishing fluid skewness of surface tension, contamination organic substance, bulky grain, metal ion behind the polishing aluminum wire in super large scale integrated circuit; After alkaline polishing is just accomplished; Before polishing disk stops, carrying out water throwing with method of the present invention immediately, under the polishing disk rotation status, can remove bulky grain, adopt the method for the neutral water throwing of big flow; Can residual polishing fluid be washed away; Add surfactant, chelating agent, resistance erosion (oxygen) agent etc. in the aqueous solution, can reduce surface tension rapidly, make metal ion form soluble chelate; Form the unimolecule passivating film in wafer surface and prevent that wafer surface from producing unsymmetrical corrosion and oxidation, thereby obtain cleaning, perfect polished surface.
The above only is preferred embodiment of the present invention, is not structure of the present invention is done any pro forma restriction.Every foundation technical spirit of the present invention all still belongs in the scope of technical scheme of the present invention any simple modification, equivalent variations and modification that above embodiment did.
Claims (1)
1. chip surface after polishing aluminum wire in super large scale integrated circuit clean treatment method, it is characterized in that: concrete steps are following,
(1) preparation liquid throwing water: count by weight (part)
Remove ionized water; Add surfactant 0.5%-5% while stirring; The FA/OII type chelating agent 0.1-5% of Jingling Microelectric Material Co., Ltd., Tianjin commercial goods; The FA/O II type corrosion inhibitor 0.01-5% of Jingling Microelectric Material Co., Ltd., Tianjin commercial goods is prepared into neutral liquid throwing water after stirring;
(2) not lifting polishing disk after the polishing in the aluminium metallization chemical mechanical polishing operation uses above-mentioned neutral liquid throwing water to adopt the method for big flow that workpiece is carried out water throwing immediately; So that surface cleaning; The flow of the big flow water throwing of said neutral liquid throwing water is 1000ml/min-5000ml/min; Time is 0.5-2 minute, and workpiece pressure is zero or only keeps the pressure of polishing disk own wt to workpiece during water throwing.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102316778A CN101901783B (en) | 2010-07-21 | 2010-07-21 | Method for cleaning chip surface after polishing aluminum wire in super large scale integrated circuit |
| PCT/CN2010/080471 WO2012009939A1 (en) | 2010-07-21 | 2010-12-30 | Processing method for cleaning wafer surface after polishing aluminum wiring of vlsi |
| US13/598,567 US20120318293A1 (en) | 2010-07-21 | 2012-08-29 | Method of cleaning wafer surfaces after polishing aluminum wirings in ultra large scale integrated circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102316778A CN101901783B (en) | 2010-07-21 | 2010-07-21 | Method for cleaning chip surface after polishing aluminum wire in super large scale integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101901783A CN101901783A (en) | 2010-12-01 |
| CN101901783B true CN101901783B (en) | 2012-05-30 |
Family
ID=43227204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102316778A Expired - Fee Related CN101901783B (en) | 2010-07-21 | 2010-07-21 | Method for cleaning chip surface after polishing aluminum wire in super large scale integrated circuit |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20120318293A1 (en) |
| CN (1) | CN101901783B (en) |
| WO (1) | WO2012009939A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101901783B (en) * | 2010-07-21 | 2012-05-30 | 河北工业大学 | Method for cleaning chip surface after polishing aluminum wire in super large scale integrated circuit |
| CN102543700B (en) * | 2010-12-23 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Method for forming aluminum metal gate |
| CN109326501B (en) * | 2017-07-31 | 2021-06-22 | 上海新昇半导体科技有限公司 | Cleaning method for semiconductor wafer after final polishing |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1858131A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Polishing liquid for grinding and polishing lithium niobate optical wafer |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3556883A (en) * | 1967-07-21 | 1971-01-19 | Mitsubishi Edogawa Kagaku Kk | Method for chemically polishing copper or copper alloy |
| JPS61291984A (en) * | 1985-06-18 | 1986-12-22 | Ichiro Shibauchi | Production of rustproof material |
| JP4516176B2 (en) * | 1999-04-20 | 2010-08-04 | 関東化学株式会社 | Substrate cleaning solution for electronic materials |
| US6395693B1 (en) * | 1999-09-27 | 2002-05-28 | Cabot Microelectronics Corporation | Cleaning solution for semiconductor surfaces following chemical-mechanical polishing |
| US6461227B1 (en) * | 2000-10-17 | 2002-10-08 | Cabot Microelectronics Corporation | Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition |
| WO2005021147A2 (en) * | 2003-02-06 | 2005-03-10 | William Marsh Rice University | High strength polycrystalline ceramic spheres |
| US7247566B2 (en) * | 2003-10-23 | 2007-07-24 | Dupont Air Products Nanomaterials Llc | CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers |
| JP4316406B2 (en) * | 2004-03-22 | 2009-08-19 | 株式会社フジミインコーポレーテッド | Polishing composition |
| EP1879223A4 (en) * | 2005-05-06 | 2009-07-22 | Asahi Glass Co Ltd | Composition for copper wiring polishing and method of polishing surface of semiconductor integrated circuit |
| CN1865387A (en) * | 2005-05-17 | 2006-11-22 | 安集微电子（上海）有限公司 | Buffing slurry |
| CN1858137A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Sapphire lining material polishing liquid and its preparing method |
| CN100400722C (en) * | 2006-06-06 | 2008-07-09 | 河北工业大学 | Method for removing quadric stress of semiconductor silicon chip |
| CN1944613A (en) * | 2006-06-07 | 2007-04-11 | 天津晶岭电子材料科技有限公司 | Cleaning agent for integrated circuit substrate silicon chip and its cleaning method |
| CN100491072C (en) * | 2006-06-09 | 2009-05-27 | 河北工业大学 | Method for controlling disc-like pit during chemically mechanical polishing for ULSI multiple-layered copper wiring |
| CN1861723A (en) * | 2006-06-09 | 2006-11-15 | 河北工业大学 | Silicon mono crystal substrate material polishing fluid and preparation process thereof |
| CN100392808C (en) * | 2006-06-23 | 2008-06-04 | 河北工业大学 | Method for removing integrated circuit wafer surface contaminant by electromechanical process |
| CN101092541A (en) * | 2006-06-23 | 2007-12-26 | 天津晶岭电子材料科技有限公司 | Finishing polish liquid in use for silicon wafer |
| US20100273330A1 (en) * | 2006-08-23 | 2010-10-28 | Citibank N.A. As Collateral Agent | Rinse formulation for use in the manufacture of an integrated circuit |
| CN101750913A (en) * | 2008-12-05 | 2010-06-23 | 安集微电子（上海）有限公司 | Cleaning solution for removing residues on photoresist layer |
| CN101901783B (en) * | 2010-07-21 | 2012-05-30 | 河北工业大学 | Method for cleaning chip surface after polishing aluminum wire in super large scale integrated circuit |
-
2010
- 2010-07-21 CN CN2010102316778A patent/CN101901783B/en not_active Expired - Fee Related
- 2010-12-30 WO PCT/CN2010/080471 patent/WO2012009939A1/en active Application Filing
-
2012
- 2012-08-29 US US13/598,567 patent/US20120318293A1/en not_active Abandoned
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1858131A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Polishing liquid for grinding and polishing lithium niobate optical wafer |
Non-Patent Citations (1)
| Title |
|---|
| 张西慧，等.硅衬底清洗液中FA/O螯合剂的应用研究.《电子器件》.2006,第29卷(第3期), * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101901783A (en) | 2010-12-01 |
| US20120318293A1 (en) | 2012-12-20 |
| WO2012009939A1 (en) | 2012-01-26 |
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