CN105590983B - 太阳能电池叠堆 - Google Patents

太阳能电池叠堆 Download PDF

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CN105590983B
CN105590983B CN201510763317.5A CN201510763317A CN105590983B CN 105590983 B CN105590983 B CN 105590983B CN 201510763317 A CN201510763317 A CN 201510763317A CN 105590983 B CN105590983 B CN 105590983B
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D·富尔曼
W·古特
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Azur Space Solar Power GmbH
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Abstract

太阳能电池叠堆具有第一半导体太阳能电池，其中，第一半导体太阳能电池具有由具有第一晶格常数的第一材料构成的pn结，并且该太阳能电池叠堆具有第二半导体太阳能电池，其中，第二半导体太阳能电池具有由具有第二晶格常数的第二材料构成的pn结，并且所述第一晶格常数比所述第二晶格常数小至少并且太阳能电池叠堆具有变质缓冲部，其中，变质缓冲部构造在第一半导体太阳能电池和第二半导体太阳能电池之间，并且变质缓冲部包括三个层的序列并且晶格常数在该序列中沿第二半导体太阳能电池的方向增加，并且变质缓冲部的层的晶格常数大于第一晶格常数，其中，缓冲部的两个层具有掺杂，并且其中，这些层之间的掺杂物浓度方面的差别大于4E17cm‑3。

Description

太阳能电池叠堆
技术领域
本发明涉及一种太阳能电池叠堆(Solarzellenstapel)。
背景技术
为了实现借助于太阳能电池将太阳光转化成电能的尽可能高的效率，数年来研究了由不同半导体材料构成的多结太阳能电池[W.Guter所著的《Optimierung von III-Vbasierten Hochleistungssolarzellen》，博士论文，康斯坦茨大学，物理系，2011年]。多结太阳能电池将入射光分布到多个相互堆叠的具有不同带隙能量的部分太阳能电池上。为了实现最高的效率，必须使半导体材料与其带隙能量彼此匹配，从而优选地串联电连接的部分太阳能电池中的每一个尽可能生成相同的电流。
只要该叠堆的各个部分电池的半导体材料具有相同的晶格常数，那么部分电池就能够借助外延方法加以制造。由Meusel等人所著的《III-VMULTIJUNCTION SOLAR CELLS-FROM CURRENT SPACE AND TERRESTRIAL PRODUCTS TO MODERN CELL ARCHITECTURES》(第五届世界光伏能源转换会议(WCPEC)，2010年，巴伦西亚，1AP.1.5)已知一种由AlInGaP、InGaAs、InGaNAs和Ge构成的晶格匹配的4结太阳能电池。出于尤其InGaNAs的部分电池的晶体质量的原因仅仅实现不充分的效率。
如果部分电池具有不同的晶格常数，则在第一替代方案中在两个部分电池之间使用变质缓冲层。由Guter等人所著的《DEVELOPMENT，QUALIFICATION AND PRODUCTION OFSPACE SOLAR CELLS WITH30％EOL EFFICIENCY》(欧洲航天动力会议，2014年，荷兰，诺德韦克豪特)已知由AlInGaP、AlInGaAs、InGaAs构成的部分电池、变质缓冲部和Ge的序列。此外，由Cornfeld等人所著的《Development of a four sub-cell inverted metamorphicmulti-junction(IMM)highly efficient AM0solar cell》(第35届IEEE光伏专家会议(PVSC)，2010年，美国，檀香山)已知一种由InGaP、GaAs构成的部分电池与第一变质缓冲部、第一InGaAs部分电池和第二变质缓冲部和第二InGaAs部分电池的另一序列。
发明内容
在此背景下，本发明的任务在于给出一种改进现有技术的装置。
所述任务通过具有权利要求1的特征的太阳能电池叠堆来解决。本发明的有利构型是从属权利要求的主题。
根据本发明的主题提供了一种太阳能电池叠堆，其具有第一半导体太阳能电池，其中，所述第一半导体太阳能电池具有由具有第一晶格常数的第一材料构成的pn结，并且所述太阳能电池叠堆具有第二半导体太阳能电池，其中，所述第二半导体太阳能电池具有由具有第二晶格常数的第二材料构成的pn结，并且所述第一晶格常数比所述第二晶格常数小至少并且所述太阳能电池叠堆具有变质缓冲部(metamorpher Puffer)，其中，所述变质缓冲部构造在所述第一半导体太阳能电池和所述第二半导体太阳能电池之间，并且所述变质缓冲部包括三个层的序列并且在所述序列中晶格常数沿所述第二半导体太阳能电池方向增加，并且所述变质缓冲部的层的晶格常数大于所述第一晶格常数，其中，所述缓冲部的两个层具有掺杂，其中，所述两个层之间的掺杂物浓度方面的差别大于4E17cm-3。
为清楚起见应当注意，第一半导体太阳能电池相较于第二半导体太阳能电池具有更小的晶格常数。下面，对于术语“半导体太阳能电池”也同义地使用术语“部分电池”。显然，具有最大带隙能量的部分电池构造在太阳能电池叠堆的朝向太阳的一侧上。下面，对于术语“太阳能电池叠堆”也同义地使用术语“叠堆状集成的多结太阳能电池”。
在光通过具有最大带隙能量的半导体太阳能电池之后，未被吸收的光、即更长波长的范围射到具有较小带隙能量的半导体太阳能电池上。只要存在用于太阳能电池叠堆的载体衬底，则该载体衬底总是与具有最小带隙能量的部分电池连接。应当注意，这两个半导体太阳能电池一起单片地集成。
在此，术语“掺杂物浓度”理解为缓冲部的相应层中的掺杂物的平均值。
有利的是，根据本发明的太阳能电池叠堆具有高的效率，其方式是，借助变质缓冲部使具有不同的晶格常数的两个太阳能电池相互叠堆。研究已经表明，缓冲部的区域中的掺杂显著地减小了位错(Versetzung)的数量，也即变质缓冲部的经掺杂的层变得更硬。借助于高品质的变质缓冲部，即借助于缓冲部的位错朝向周围活性区域的传播的抑制，也可以如此地选择带隙能量，使得根据本发明的太阳能电池叠堆的总效率相较于由晶格匹配的太阳能电池组成的叠堆而言提高了。
在一种扩展方案中，所述变质缓冲部的至少一个层具有第四晶格常数，其中，所述第四晶格常数大于所述第二半导体太阳能电池的晶格常数。优选地，在所述变质缓冲部的多个层中晶格常数沿所述第二半导体太阳能电池方向从层到层地分别增加至少
在一种优选的实施方式中，在变质缓冲部中，对于两个彼此紧邻的层，这两个层具有不同的掺杂物浓度。
在另一种实施方式中，在缓冲部的两个彼此紧邻的层中掺杂物浓度方面的区别大于因子5、优选大于因子7、最优选地大于因子10。显然，变质缓冲部的多个层或者具有n型掺杂或者具有p型掺杂。
优选地，在所述变质缓冲部中设有Zn和/或C和/或Mg和/或Be作为p型掺杂物并且设有Si和/或Te和/或Se作为n型掺杂物。研究已经表明，变质缓冲部的相应层内的掺杂物浓度基本上是恒定的、优选是恒定的。
在另一种扩展方案中，变质缓冲部包括多于三个层、优选地该缓冲部包括至少五个层、最优选地至少六个层。
在一种优选的实施方式中，变质缓冲部的两个层具有相同的掺杂物浓度。优选地，这两个层相互材料锁合地连接。
在另一种扩展方案中，在所述变质缓冲部的多个层的序列中，所述掺杂物浓度从层到层地首先增加并且随后又减小。有利的是，变质缓冲层内的掺杂物浓度不超过1E19cm-3，最优选不超过0.5E19cm-3。
显然，所述变质缓冲层不是隧道二极管的pn结的一部分。
在一种特别有利的实施中，设有Ge或者GaAs作为衬底层，其中，第一半导体太阳能电池和或第二半导体太阳能电池由材料Ge和或GaAs和或InGaAs和或InGaP构成。
在一种扩展方案中，所述叠堆的所有太阳能电池单片地集成和/或构造有光学反光镜。显然，光学反光镜布置在具有最小带隙能量的半导体太阳能电池之下。优选地，由金属来构造光学反光镜。借助反光镜能够将未被吸收的光子反射回具有最小带隙能量的半导体太阳能电池中并且增大光学路径。
附图说明
下面将参考附图详细地阐述本发明。在此，相似的部分附有相同的标记。所示出的实施方式是高度示意性的，也就是说距离以及水平延展和垂直延展不是严格符合比例的并且除非另有说明否则不具有可推导的相互几何关系。其中示出了：
图1a示出与二结半导体太阳能电池相关联的变质缓冲部的第一实施方式，
图1b示出用于在图1a中所示的二结半导体太阳能电池的晶格常数的变化过程，
图1c示出用于在图1a中所示的缓冲部的第一实施方式的掺杂的变化过程，
图2a示出变质缓冲部的第二实施方式，
图2b示出用于在图2a中所示的变质缓冲部的第二实施方式的掺杂的变化过程，
图2c示出用于在图2a中所示的缓冲部的第二实施方式的硬度的变化过程，
图3a示出变质缓冲部的第三实施方式，
图3b示出用于在图3a中所示的变质缓冲部的第三实施方式的掺杂的变化过程，
图3c示出用于在图3a中所示的缓冲部的第三实施方式的掺杂的替代变化过程。
具体实施方式
图1的示图示出太阳能电池叠堆10，其具有第一半导体太阳能电池20和第二半导体太阳能电池30以及在半导体太阳能电池20和第二半导体太阳能电池30之间构造的变质缓冲部40。
第一半导体太阳能电池20具有由具有第一晶格常数a1和第一带隙能量Eg1的第一材料构成的pn结。第二半导体太阳能电池30具有由具有第二晶格常数a2和第二带隙能量Eg2的第二材料构成的pn结。第二晶格常数a2大于第一晶格常数a1。太阳光射线通过第二半导体太阳能电池30并且随后透过缓冲部并且此后射到第一半导体太阳能电池20上。在一种未示出的实施方式中，太阳光射线通过第一半导体太阳能电池20并且随后透过缓冲部并且此后射到第二半导体太阳能电池30上。
在此，缓冲部40具有五个层41、42、43、44和45的序列，其中，缓冲部40的第一层41布置在第一半导体太阳能电池20与缓冲部40的第二层42之间，并且缓冲部40的第三层43布置在缓冲部40的第二层42与缓冲部40的第四层44之间，并且缓冲部40的第四层44布置在缓冲部40的第三层43与缓冲部40的第五层45之间，并且缓冲部40的第五层45布置在缓冲部40的第四层44和第二半导体太阳能电池30之间。在一种未示出的实施方式中，变质缓冲部40具有六个或者更多个层。在另一种也未示出的实施方式中，缓冲部40具有三个或者四个层。
图1b的示图示出用于在图1a中所示的二结半导体太阳能电池10的太阳能电池叠堆的以为单位的晶格常数A的变化过程。下面仅仅阐述与在图1a的示图中所示出的实施方式的区别。第一半导体太阳能电池20具有第一晶格常数a1，其中，对于整个第一半导体太阳能电池20来说第一晶格常数a1是恒定的。
在从第一半导体太阳能电池20到缓冲部40的第一层41的过渡处，晶格常数A跳跃到第一层41的晶格常数ap1，其中，第一层41的晶格常数ap1大于第一半导体太阳能电池20的晶格常数a1。
在从第一层41到第二层42的过渡处，晶格常数A跳跃到相较于第一层41的晶格常数ap1更大的、第二层42的晶格常数ap2，其中，晶格常数A从缓冲部40的层到层地分别增加至少
在从第二层42到第三层43的过渡处，晶格常数A跳跃到相较于第二层42的晶格常数ap2更大的、第三层43的晶格常数ap3。
在从第三层43到第四层44的过渡处，晶格常数A跳跃到相较于第三层43的晶格常数ap3更大的、第四层44的晶格常数ap4。
在从第四层44到第五层45的过渡处，晶格常数A跳跃到相较于第四层44的晶格常数ap4更小的、第五层45的晶格常数ap5，其中，第五层45的晶格常数ap5与第二半导体太阳能电池30的第二晶格常数a2同样大。通过在缓冲部40内第四层44的晶格常数最大并且尤其大于第二晶格常数a2的方式实现了缓冲部的高的缓和(Relaxation)。第一半导体太阳能电池20的晶格常数a1也比第二半导体太阳能电池30的第二晶格常数a2小至少
图1c的示图示出用于在图1a中所示的变质缓冲部40的多个层的以N/cm-3为单位的掺杂D的变化过程。下面仅仅阐述与图1a和1b的示图中所示的实施方式的区别。在此应当注意，在缓冲部的多个层之间的掺杂D变化的情况下，浓度方面的区别至少大于4E17N/cm-3。
从缓冲部40的第一层41中的掺杂物dp1的第一低浓度或者固有浓度出发，在从第一层41到第二层42的过渡处，掺杂D跳跃到相较于第一层41的掺杂dp1更大的、第二层42的掺杂dp2。
在从第二层42到三层43的过渡处，掺杂D跳跃到相较于第二层42的掺杂dp2更大的、第三层43的掺杂dp3。
在从第三层43到第四层44的过渡处，掺杂D跳跃到相较于第三层43的掺杂dp3更大的、第四层44的掺杂dp4。此后，第五层45的掺杂dp5保持在第四层44的水平上。换言之，在第四层44与第五层45之间在掺杂物浓度方面不存在区别并且dp4＝dp5适用。
图2a的示图示出变质缓冲部40的第二实施方式。下面仅仅阐述与前述实施方式的区别。缓冲部40再次总共具有五个层41、42、43、44和45。
图2b的示图示出用于在图2a中所示的变质缓冲部40的第二实施方式的掺杂D的变化过程。下面仅仅阐述与前述实施方式的区别。掺杂D以1E16N/cm3<ΔD<5e17N/cm3的跳跃从缓冲部40的一个层到缓冲部40的下一个层直至包括第四层44在内地增加。然而，缓冲部40的最后两个层44和45的掺杂dp4和dp5是恒定的。
图2c的示图示出用于在图2a中所示的缓冲部40的第二实施方式的硬度H的变化过程。硬度H跳跃性地从缓冲部40的第一层41到第二层42并且从第二层42到第三层43以及从第三层43到第四层44地增加，其中，缓冲部40的最后两个层44和45的硬度H保持恒定。
图3a的示图示出变质缓冲部40的第三实施方式。下面仅仅阐述与前述实施方式的区别。在此，第四层44和第五层45分别比缓冲部40的其他层略微更厚地构造。
图3b的示图示出用于在图3a中所示的变质缓冲部的第三实施方式的掺杂D的变化过程。下面仅仅阐述与前述实施方式的区别。掺杂D以1E16N/cm3<ΔD<5e16N/cm3的跳跃从缓冲部40的一个层到缓冲部40的下一个层直至包括第三层43在内地增加。掺杂从第三层43出发朝第四层44跳跃到比第三层43中的掺杂物浓度大了至少五倍的浓度，优选地，第三层43的掺杂到第四层44的掺杂至少以因子10来增加。
图3c示出用于在图3a中所示的变质缓冲部的第三实施方式的替代的掺杂D的变化过程。下面仅仅阐述与前述实施方式的区别。掺杂D从第一层41至包括第三层43在内是恒定地低的或者固有的并且从第三层43出发朝第四层44跳跃到大了至少1E18N/cm-3的浓度。

Claims (14)

1.一种太阳能电池叠堆(10)，其具有：
第一半导体太阳能电池(20)，其中，所述第一半导体太阳能电池(20)具有由具有第一晶格常数(a1)的第一材料构成的pn结；
第二半导体太阳能电池(30)，其中，所述第二半导体太阳能电池(30)具有由具有第二晶格常数(a2)的第二材料构成的pn结；
所述第一晶格常数(a1)比所述第二晶格常数(a2)小至少
变质缓冲部(40)，其中，所述变质缓冲部(40)构造在所述第一半导体太阳能电池(20)和所述第二半导体太阳能电池(30)之间；
所述变质缓冲部(40)包括至少三个层的序列并且所述变质缓冲部(40)的这些层的每个晶格常数(A)向着所述第二半导体太阳能电池(30)的方向增加；
所述变质缓冲部(40)的这些层的每个晶格常数(ap1，ap2，ap3，ap4，ap5)大于所述第一晶格常数(a1)，
其特征在于，
所述变质缓冲部(40)的至少三个层具有掺杂，其中，在这些层的每一个之间的掺杂物的浓度(N/cm-3)方面的差别从第一半导体太阳能电池到第二半导体太阳能电池递增地大于4E17N/cm3，并且
在所述变质缓冲部的这些层内所述掺杂物(D)的浓度遍及所述变质缓冲部不超过1E19N/cm3。
2.根据权利要求1所述的太阳能电池叠堆(10)，其特征在于，所述变质缓冲部(40)的一个层具有第四晶格常数(ap4)并且所述第四晶格常数(ap4)大于所述第二半导体太阳能电池(20)的晶格常数(a2)。
3.根据权利要求1或2所述的太阳能电池叠堆(10)，其特征在于，所述变质缓冲部(40)的晶格常数(A)沿所述第二半导体太阳能电池(30)的方向从层到层地分别增加至少
4.根据权利要求1或2所述的太阳能电池叠堆(10)，其特征在于，对于所述变质缓冲部(40)的两个彼此紧邻的层，这两个层具有所述掺杂物(D)的不同浓度。
5.根据权利要求1或2所述的太阳能电池叠堆(10)，其特征在于，对于所述缓冲部(40)的两个彼此紧邻的层，所述掺杂物(D)的浓度方面的差别大于因子5。
6.根据权利要求1或2所述的太阳能电池叠堆(10)，其特征在于，所述变质缓冲部(40)的层具有n型掺杂或者p型掺杂。
7.根据权利要求1或2所述的太阳能电池叠堆(10)，其特征在于，在所述变质缓冲部(40)中设有Zn和/或C和/或Mg和/或Be作为p型掺杂物并且设有Si和/或Te和/或Se作为n型掺杂物。
8.根据权利要求1或2所述的太阳能电池叠堆(10)，其特征在于，所述掺杂物的浓度在所述变质缓冲部的相应层内是恒定的。
9.根据权利要求1或2所述的太阳能电池叠堆(10)，其特征在于，所述变质缓冲部(40)包括多于五个层。
10.根据权利要求1或2所述的太阳能电池叠堆(10)，其特征在于，所述变质缓冲部(40)的两个层具有所述掺杂物的相同浓度。
11.根据权利要求1或2所述的太阳能电池叠堆(10)，其特征在于，在所述变质缓冲部(40)的多个层的序列中，所述掺杂物(D)的浓度从层到层地首先增加并且随后又减小。
12.根据权利要求1或2所述的太阳能电池叠堆(10)，其特征在于，变质缓冲部(40)的层不是隧道二极管的pn结的一部分。
13.根据权利要求1或2所述的太阳能电池叠堆(10)，其特征在于，设有Ge或者GaAs作为衬底层并且所述第一半导体太阳能电池(20)和/或所述第二半导体太阳能电池(30)由材料Ge和/或GaAs和/或InGaAs和/或InGaP构成。
14.根据权利要求1或2所述的太阳能电池叠堆(10)，其特征在于，所有半导体太阳能电池(20，30)是单片集成的和/或构造有光学反光镜。
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