CN102194903A - 一种具有渐变缓冲层太阳能电池 - Google Patents

一种具有渐变缓冲层太阳能电池 Download PDF

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CN102194903A
CN102194903A CN2010101429213A CN201010142921A CN102194903A CN 102194903 A CN102194903 A CN 102194903A CN 2010101429213 A CN2010101429213 A CN 2010101429213A CN 201010142921 A CN201010142921 A CN 201010142921A CN 102194903 A CN102194903 A CN 102194903A
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李荣仁
林宣乐
李世昌
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Epistar Corp
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Abstract

一反向变质多接面(IMM)太阳能电池，包括一支持基板；一底电池位于支持基板之上；一渐变缓冲层位于底电池之上；一中间电池位于渐变缓冲层之上；以及一顶电池位于中间电池之上。

Description

一种具有渐变缓冲层太阳能电池
技术领域
本发明关于一光电元件，尤其关于一种具有渐变缓冲层的太阳能电池。
背景技术
光电元件包括许多种类，例如发光二极管(Light-emitting Diode；LED)、太阳能电池(Solar Cell)或光电二极管(Photo Diode)等。
由于石化能源短缺，且人们对环保重要性的认知提高，因此人们近年来不断地积极研发替代能源与再生能源的相关技术，其中以太阳能电池最受瞩目。主要是因为太阳能电池可直接将太阳能转换成电能，且发电过程中不会产生二氧化碳或氮化物等有害物质，不会对环境造成污染。太阳能电池中又以InGaP/GaAs/Ge的三接面太阳能电池最具发展潜力，然而InGaP、GaAs和Ge的彼此的晶格常数不匹配，由Ge电池向上依序成长GaAs电池与InGaP电池时，晶格之间会形成晶格错位，产生应力，破坏外延的品质，降低太阳能电池的能量转换效率。
反向变质多接面(Inverted Metamorphic Multijunction；IMM)太阳能电池是在一成长基板上依序先成长晶格常数匹配的GaInP电池及GaAs电池，接着再成长晶格常数与GaInP电池及GaAs电池不匹配的InGaAs电池，将一支持基板与InGaAs电池接合后移除成长基板，形成反向变质多接面(IMM)太阳能电池。如此改善GaInP电池及GaAs电池的外延品质，提高太阳电池的能量转换效率。但是在能隙较低的InGaAs电池仍会产生晶格错位，降低InGaAs电池的外延品质。
上述如太阳能电池等的光电元件可包括基板及电极，可进一步地经由焊块或胶材将基板与一基座连接，而形成一发光装置或一吸光装置。另外，基座更具有至少一电路，经由一导电结构，例如金属线，电连接光电元件的电极。
发明内容
第一实施例的一反向变质多接面(IMM)太阳能电池至少包括一支持基板；一底电池位于支持基板之上；一渐变缓冲层位于底电池之上；一中间电池位于渐变缓冲层之上；以及一顶电池位于中间电池之上。
附图说明
附图用以促进对本发明的理解，为本说明书的一部分。附图的实施例配合实施方式的说明用以解释本发明的原理。
图1为依据本发明的第一实施例的剖面图。
图2为依据本发明的第一实施例的渐变缓冲层的剖面图。
主要元件符号说明
1：太阳能电池
10：支持基板
12：底电池
14：渐变缓冲层
141：第一缓冲层
142、144、146、148：渐变附属层
143、145、147：碲掺杂中间层
149：第二缓冲层
16：中间电池
18：顶电池
具体实施方式
本发明的实施例会被详细地描述，并且示出在附图中，相同或类似的部分会以相同的标号在各附图以及说明出现。
如图1所示，一反向变质多接面(IMM)太阳能电池1包括一支持基板10；一底电池12位于支持基板10之上；一渐变缓冲层14位于底电池12之上；一中间电池16位于渐变缓冲层14之上；以及一顶电池18位于中间电池16之上。顶电池18的能隙大于中间电池16与底电池12的能隙，其材料包括InGaP、InGaAs、AlGaAs或AlGaInP。中间电池16的能隙大于底电池12的能隙，其材料包括GaAs、GaInP、InGaAs、GaAsSb或InGaAsN。底电池12的材料包括Ge、GaAs或InGaAs。顶电池18、中间电池16与底电池12可以吸收不同频谱的光线并产生电流。
如图2所示，渐变缓冲层14包括一第一缓冲层141位于底电池12与中间电池16之间；多个渐变附属层142、144、146与148位于第一缓冲层141与中间电池16之间；多个碲掺杂中间层143、145与147位于彼此相邻的多个渐变附属层142、144、146与148之间；以及一第二缓冲层149位于渐变附属层148与中间电池16之间。本实施例的渐变附属层以142、144、146与148四层为例，但不限于此，渐变附属层的数量亦可为大于四或小于四。本实施例的碲掺杂中间层以143、145与147三层为例，但不限于此，碲掺杂中间层的数量亦可为大于三或小于三。第一缓冲层141的材料包括InGaAs、GaAs、AlGaAs、InGaP或AlGaInP；第二缓冲层149的材料包括GaAs。多个附属渐变层142、144、146与148的材料包括InxGa(1-x)P、InxGa(1-x)As或(AlyGa(1-y))xIn(1-x)As，其中多个渐变附属层的In含量x自靠近支持基板往远离支持基板的方向递减，且0＜x＜1，0＜y＜1。多个渐变附属层142、144、146与148仅被掺杂n型杂质，例如硅、硒或硫，浓度约为E17cm-3-E20cm-3，未被掺杂碲(Te)。多个碲掺杂中间层143、145与147被掺杂碲(Te)与n型杂质，厚度约为
Figure GSA00000057436800031
其中n型杂质例如为硅、硒或硫，浓度约为E17cm-3-E20cm-3，碲浓度约为E17cm-3-E20cm-3。多个碲掺杂中间层143、145与147的材料包括InxGa(1-x)P、InGaAs或AlInGaAs，0＜x＜1。以碲掺杂中间层143为例，形成碲掺杂中间层143的方法包括在成长气室形成渐变附属层144之后，持续通入形成渐变附属层144的气体，同时通入具有n型杂质的Si2H6与具有碲杂质的DETe以形成碲掺杂中间层143，上述同时通入具有杂质的反应气体的时间约为1-90秒，碲掺杂中间层145与147的形成方法与碲掺杂中间层143类似。由于反向变质多接面(IMM)太阳能电池1是在一成长基板(未显示)上依序先成长晶格常数匹配的顶电池18及中间电池16，接着再成长晶格常数与顶电池18及中间电池16不匹配的底电池12，将一支持基板10与底电池12接合后移除成长基板，形成反向变质多接面(IMM)太阳能电池1，所以底电池12与中间电池16之间会产生晶格错位。渐变缓冲层14可减少底电池12与中间电池16之间晶格错位的产生，碲可改善渐变附属层142、144、146与148的外延品质，有助渐变缓冲层14降低因底电池12与中间电池16晶格常数不匹配所产生的应力，提升底电池12的外延品质。
上述实施例仅为示例性说明本发明的原理及其功效，而并非用于限制本发明。任何本发明所属技术领域中普通技术人员均可在不违背本发明的技术原理及精神的情况下，对上述实施例进行修改及变化。因此本发明的权利保护范围由权利要求书所限定。

Claims (8)

1.一太阳能电池，包括：
一支持基板；
一底电池，位于该支持基板之上；
一渐变缓冲层，位于该底电池之上，包括：
多个渐变附属层，其中该多个渐变附属层不被掺杂碲；以及
多个碲掺杂中间层，位于任二相邻的该多个渐变附属层之间；
一中间电池，位于该渐变缓冲层之上；以及
一顶电池，位于该中间电池之上。
2.根据权利要求1所述的太阳能电池，其中该多个渐变附属层包括n型杂质。
3.根据权利要求1所述的太阳能电池，其中该多个渐变附属层的材料为选自由InxGa(1-x)P、InxGa(1-x)As与(AlyGa(1-y))xIn(1-x)As所构成的群组，0＜x＜1，0＜y＜1。
4.根据权利要求3所述的太阳能电池，其中该多个渐变附属层的In含量x自靠近该支持基板往远离该支持基板的方向递减。
5.根据权利要求1所述的太阳能电池，其中该多个碲掺杂中间层包括n型杂质。
6.根据权利要求1所述的太阳能电池，其中该多个碲掺杂中间层的材料为选自由InxGa(1-x)P、InGaAs与AlInGaAs所构成的群组，0＜x＜1。
7.根据权利要求1所述的太阳能电池，其中该渐变缓冲层还包括：
一第一缓冲层，位于该底电池与该多个渐变附属层之间；以及
一第二缓冲层，位于该中间电池与该多个渐变附属层之间。
8.根据权利要求7所述的太阳能电池，其中该第一缓冲层的材料为选自由InGaAs、GaAs、AlGaAs、InGaP与AlGaInP所构成的群组；以及该第二缓冲层的材料包括GaAs。
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CN111384152A (zh) * 2018-12-28 2020-07-07 晶元光电股份有限公司 半导体元件

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