CN105540578A - 硫掺杂石墨烯量子点的共燃制备方法 - Google Patents

硫掺杂石墨烯量子点的共燃制备方法 Download PDF

Info

Publication number
CN105540578A
CN105540578A CN201610110239.3A CN201610110239A CN105540578A CN 105540578 A CN105540578 A CN 105540578A CN 201610110239 A CN201610110239 A CN 201610110239A CN 105540578 A CN105540578 A CN 105540578A
Authority
CN
China
Prior art keywords
quantum dot
graphene quantum
preparation
sulfur doping
cofiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610110239.3A
Other languages
English (en)
Other versions
CN105540578B (zh
Inventor
唐利斌
姬荣斌
项金钟
高树雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kunming Institute of Physics
Original Assignee
Kunming Institute of Physics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kunming Institute of Physics filed Critical Kunming Institute of Physics
Priority to CN201610110239.3A priority Critical patent/CN105540578B/zh
Publication of CN105540578A publication Critical patent/CN105540578A/zh
Application granted granted Critical
Publication of CN105540578B publication Critical patent/CN105540578B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/80Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/80Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/01Particle morphology depicted by an image
    • C01P2004/03Particle morphology depicted by an image obtained by SEM
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/01Particle morphology depicted by an image
    • C01P2004/04Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/60Optical properties, e.g. expressed in CIELAB-values

Landscapes

  • Carbon And Carbon Compounds (AREA)

Abstract

硫掺杂石墨烯量子点的共燃制备方法,涉及石墨烯量子点的制备方法,尤其是一种采用价格低廉的液体石蜡和二硫化碳作为原材料,采用共燃法进行制备的硫掺杂石墨烯量子点的共燃制备方法。本发明的硫掺杂石墨烯量子点的共燃制备方法,通过异质硫原子的掺杂,来有效地调制石墨烯量子点的结构和能级,从而调制石墨烯量子点光电性质,其特征在于硫掺杂石墨烯量子点通过共燃、超声等制备方法得到。本发明的硫掺杂石墨烯量子点的共燃制备方法,整体技术路线创新,价格低廉,共燃法制备得到硫掺杂碳纳米球,再经过超声液相剥离,成功制备出硫掺杂石墨烯量子点,具有优异的光电性质,增加了石墨烯量子点的额外能级,有效地改变了石墨烯量子点的性能。

Description

硫掺杂石墨烯量子点的共燃制备方法
技术领域
本发明涉及石墨烯量子点的制备方法,尤其是一种采用价格低廉的液体石蜡和二硫化碳作为原材料,采用共燃法进行制备的硫掺杂石墨烯量子点的共燃制备方法。
背景技术
近年来,石墨烯量子点的制备及其掺杂技术备受关注。石墨烯量子点是厚度为0.5~1.5nm、粒径为10nm左右的石墨烯单层或少层石墨烯碎片,其表面含有羰基、羟基、羧基等基团使其具有良好的水溶性,并具有优异的化学惰性、良好的生物兼容性、无毒性、低淬灭性以及稳定的化学特性,同时还具有比石墨烯更大的表面积、更好的表面嫁接性,可以通过π-π共轭结合引入较多的官能团,使其成为重要的碳纳米材料,已经成为凝聚态物理、光电信息和材料科学等领域的研究前沿。
尽管石墨烯量子点具有如此多的优点,但石墨烯量子点能带结构单一的特点限制了其更广泛的应用,通过对石墨烯量子点进行异质原子掺杂,可以有效地调制其能级结构,从而改变其光电性能。异质原子的引入,可以使石墨烯量子点的能级结构更加多元化,还可以改变石墨烯量子点的导电类型,成为p型或n型掺杂量子点,从而可以广泛应用于探测器、发光二极管、太阳能电池、超级电容器、锂离子电池、荧光材料等领域中。
发明内容
本发明所要解决的就是现有石墨烯量子点能带结构单一的问题,提供一种采用价格低廉的液体石蜡和二硫化碳作为原材料,采用共燃法进行制备的硫掺杂石墨烯量子点的共燃制备方法。
本发明的硫掺杂石墨烯量子点的共燃制备方法,通过异质硫原子的掺杂,来有效地调制石墨烯量子点的结构和能级,从而调制石墨烯量子点光电性质,其特征在于硫掺杂石墨烯量子点通过共燃、超声等制备方法得到:
(1)共燃:取液体石蜡与二硫化碳,均匀混合后点燃,在火焰上方放置载玻片,待燃烧熄灭后收集载玻片上的硫掺杂碳纳米球;
(2)超声液相剥离:在硫掺杂碳纳米球中加入分散剂,利用超声进行液相剥离后再进行离心分离,收取上层清液,得到硫掺杂石墨烯量子点溶液;
(3)干燥:将步骤(2)得到的硫掺杂石墨烯量子点溶液加热干燥后就能得到硫掺杂石墨烯量子点。
所述的步骤(1)中液体石蜡与二硫化碳的质量比为5:1。
所述的步骤(1)中的载玻片设置在火焰上方25-30cm处。
所述的步骤(1)中的超声频率为53KHz。
所述的步骤(2)中的分散剂为N-甲基吡咯烷酮,每100ml的N-甲基吡咯烷酮加入0.5g的硫掺杂碳纳米球加入进行混合。
所述的步骤(2)中超声处理时间为5h,离心处理速度为8000转/分,离心时间为25~30min。
所述的步骤(2)中加热干燥温度为80℃。
本发明的硫掺杂石墨烯量子点的共燃制备方法,采用共燃、超声以及离心分离等方法进行制备,有效地调制石墨烯量子点的结构和能级,从而调制石墨烯量子点光电性质,具有以下效果及优点:
1、整体技术路线创新,采用可行、易得的液态石蜡作为碳源,价格低廉,共燃法制备得到硫掺杂碳纳米球,再经过超声液相剥离,成功制备出了硫掺杂石墨烯量子点;
2、此方法制备硫掺杂石墨烯量子操作可行,制备得到的硫掺杂石墨烯量子点具有优异的光电性质,通过硫元素的掺杂,增加了石墨烯量子点的额外能级,有效地改变了石墨烯量子点的性能;
3、硫掺杂浓度可调;
4、量子点尺寸均匀,呈现单分散特性;
5、此方法材料容易得到,成本低廉,方法简单,可用于大规模生产。
附图说明
图1为硫掺杂石墨烯量子点的XRD图。
图2为硫掺杂碳纳米材料及硫掺杂石墨烯量子点的FT-IR图。
图3为硫掺杂石墨烯量子点TEM图。
图4为硫掺杂石墨烯量子点水溶液的UV-Vis吸收光谱图。
图5为硫掺杂石墨烯量子点水溶液的光致发光(PL)谱。
图6为硫掺杂碳纳米球的SEM图。
图7为硫掺杂石墨烯量子点的Raman光谱图。
具体实施方式
实施例1:一种硫掺杂石墨烯量子点的共燃制备方法,通过异质硫原子的掺杂,来有效地调制石墨烯量子点的结构和能级,从而调制石墨烯量子点光电性质,该硫掺杂石墨烯量子点通过共燃、超声等制备方法得到:
(1)共燃:用吸管取5g液体石蜡与1g二硫化碳,均匀混合后装入干净的纯白色棉灯芯瓶中点燃,在火焰上方25-30cm处用镊子夹住洁净的载玻片,收集燃烧过程中产生的硫掺杂碳纳米球,待燃烧熄灭后将载玻片上的硫掺杂碳纳米球全部收集起来;
(2)超声液相剥离:在硫掺杂碳纳米球中加入分散剂,该分散剂选用N-甲基吡咯烷酮,取0.5g硫掺杂碳纳米球,放入100ml的N-甲基吡咯烷酮中,利用频率为53KHz的超声进行液相剥离,超声时间为5h,后再进行离心分离,离心处理速度为8000转/分,离心时间为25~30min,然后收取上层清液,得到硫掺杂石墨烯量子点溶液;
(3)干燥:将步骤(2)得到的硫掺杂石墨烯量子点溶液加热至80℃,待干燥后就能得到硫掺杂石墨烯量子点。
实施例2:一种硫掺杂石墨烯量子点的共燃制备方法,通过异质硫原子的掺杂,来有效地调制石墨烯量子点的结构和能级,从而调制石墨烯量子点光电性质,该硫掺杂石墨烯量子点通过共燃、超声等制备方法得到:
(1)共燃:用吸管取5g液体石蜡与1g二硫化碳,均匀混合后装入干净的纯白色棉灯芯瓶中点燃,在火焰上方25-30cm处用镊子夹住洁净的载玻片,收集燃烧过程中产生的硫掺杂碳纳米球,待燃烧熄灭后将载玻片上的硫掺杂碳纳米球全部收集起来;
(2)超声液相剥离:在硫掺杂碳纳米球中加入分散剂,该分散剂选用N-甲基吡咯烷酮,取0.25g硫掺杂碳纳米球,放入50ml的N-甲基吡咯烷酮中,利用频率为53KHz的超声进行液相剥离,超声时间为5h,后再进行离心分离,离心处理速度为8000转/分,离心时间为25~30min,然后收取上层清液,得到硫掺杂石墨烯量子点溶液;
(3)干燥:将步骤(2)得到的硫掺杂石墨烯量子点溶液加热至80℃,待干燥后就能得到硫掺杂石墨烯量子点。

Claims (7)

1.一种硫掺杂石墨烯量子点的共燃制备方法,通过异质硫原子的掺杂,来有效地调制石墨烯量子点的结构和能级,从而调制石墨烯量子点光电性质,其特征在于硫掺杂石墨烯量子点通过共燃、超声等制备方法得到:
(1)共燃:取液体石蜡与二硫化碳,均匀混合后点燃,在火焰上方放置载玻片,待燃烧熄灭后收集载玻片上的硫掺杂碳纳米球;
(2)超声液相剥离:在硫掺杂碳纳米球中加入分散剂,利用超声进行液相剥离后再进行离心分离,收取上层清液,得到硫掺杂石墨烯量子点溶液;
(3)干燥:将步骤(2)得到的硫掺杂石墨烯量子点溶液加热干燥后就能得到硫掺杂石墨烯量子点。
2.如权利要求1所述的硫掺杂石墨烯量子点的共燃制备方法,其特征在于所述的步骤(1)中液体石蜡与二硫化碳的质量比为5:1。
3.如权利要求1所述的硫掺杂石墨烯量子点的共燃制备方法,其特征在于所述的步骤(1)中的载玻片设置在火焰上方25-30cm处。
4.如权利要求1所述的硫掺杂石墨烯量子点的共燃制备方法,其特征在于所述的步骤(1)中的超声频率为53KHz。
5.如权利要求1所述的硫掺杂石墨烯量子点的共燃制备方法,其特征在于所述的步骤(2)中的分散剂为N-甲基吡咯烷酮,每100ml的N-甲基吡咯烷酮加入0.5g的硫掺杂碳纳米球加入进行混合。
6.如权利要求1所述的硫掺杂石墨烯量子点的共燃制备方法,其特征在于所述的步骤(2)中超声处理时间为5h,离心处理速度为8000转/分,离心时间为25~30min。
7.如权利要求1所述的硫掺杂石墨烯量子点的共燃制备方法,其特征在于所述的步骤(2)中加热干燥温度为80℃。
CN201610110239.3A 2016-02-29 2016-02-29 硫掺杂石墨烯量子点的共燃制备方法 Active CN105540578B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610110239.3A CN105540578B (zh) 2016-02-29 2016-02-29 硫掺杂石墨烯量子点的共燃制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610110239.3A CN105540578B (zh) 2016-02-29 2016-02-29 硫掺杂石墨烯量子点的共燃制备方法

Publications (2)

Publication Number Publication Date
CN105540578A true CN105540578A (zh) 2016-05-04
CN105540578B CN105540578B (zh) 2017-11-28

Family

ID=55820215

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610110239.3A Active CN105540578B (zh) 2016-02-29 2016-02-29 硫掺杂石墨烯量子点的共燃制备方法

Country Status (1)

Country Link
CN (1) CN105540578B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106587032A (zh) * 2017-02-07 2017-04-26 昆明物理研究所 溴掺杂石墨烯量子点液相剥离制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102225758A (zh) * 2011-04-13 2011-10-26 昆明物理研究所 一种石墨烯量子点的超声波化学制备方法
CN104860308A (zh) * 2015-05-20 2015-08-26 哈尔滨工业大学 一种应用燃烧合成法制备掺氮石墨烯的方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102225758A (zh) * 2011-04-13 2011-10-26 昆明物理研究所 一种石墨烯量子点的超声波化学制备方法
CN104860308A (zh) * 2015-05-20 2015-08-26 哈尔滨工业大学 一种应用燃烧合成法制备掺氮石墨烯的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
YUZHI HAN等: "Non-metal single/dual doped carbon quantum dots: a general flame synthetic method and electro-catalytic properties", 《THE ROYAL SOCIETY OF CHEMISTRY》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106587032A (zh) * 2017-02-07 2017-04-26 昆明物理研究所 溴掺杂石墨烯量子点液相剥离制备方法
CN106587032B (zh) * 2017-02-07 2019-04-26 昆明物理研究所 溴掺杂石墨烯量子点液相剥离制备方法

Also Published As

Publication number Publication date
CN105540578B (zh) 2017-11-28

Similar Documents

Publication Publication Date Title
Semeniuk et al. Future perspectives and review on organic carbon dots in electronic applications
Wei et al. Graphene quantum dots prepared from chemical exfoliation of multiwall carbon nanotubes: An efficient photocatalyst promoter
Jiao et al. Synthesis of Z-scheme g-C3N4/PPy/Bi2WO6 composite with enhanced visible-light photocatalytic performance
Lai et al. Photoresponse of polyaniline-functionalized graphene quantum dots
CN104401981B (zh) 一种三原色荧光的含氮的氧化石墨烯量子点的制备方法
CN104150473A (zh) 一种氮掺杂石墨烯量子点的化学制备方法
Gao et al. Facile preparation of sulphur-doped graphene quantum dots for ultra-high performance ultraviolet photodetectors
CN102190296A (zh) 一种水溶性石墨烯量子点的水热制备方法
CN111606319B (zh) 碳纳米卷及其制备方法和应用以及碳纳米带
CN104340965A (zh) 一种荧光碳量子点的宏量制备方法
CN105197917A (zh) 氮掺杂石墨烯量子点分散液的制备方法
Xiong et al. Chemically synthesized carbon nanorods with dual polarized emission
CN108219785B (zh) 一种高荧光强度硅掺杂碳量子点及其光化学合成方法与应用
Li et al. Two-dimensional monoelemental germanene nanosheets: facile preparation and optoelectronic applications
Hsiao et al. Dual-sized carbon quantum dots enabling outstanding silicon-based photodetectors
CN106118646A (zh) 一类黄光发射碳量子点的廉价制备方法
CN105600780B (zh) 氯掺杂石墨烯量子点的共燃制备方法
CN107195725A (zh) 石墨烯/TiO2纳米柱阵列肖特基结紫外光电探测器及其制备方法
Chen et al. S-scheme heterojunction BP/WO3 with tight interface firstly prepared in magnetic stirring reactor for enhanced photocatalytic degradation of hazardous contaminants under visible light
CN105540578A (zh) 硫掺杂石墨烯量子点的共燃制备方法
Zhao et al. Recent progress of carbon dots for air pollutants detection and photocatalytic removal: synthesis, modifications, and applications
CN105271200B (zh) 氟掺杂石墨烯量子点及其制备方法
CN102851022A (zh) 一种荧光硅纳米颗粒的制备方法
CN102338941A (zh) 碲化镉量子点接枝石墨烯-碳纳米管复合薄膜光开关材料及制备
CN115851271B (zh) 一种氮掺杂荧光碳点的制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant