CN105525269B - A kind of magnetron sputtering apparatus - Google Patents
A kind of magnetron sputtering apparatus Download PDFInfo
- Publication number
- CN105525269B CN105525269B CN201610087812.3A CN201610087812A CN105525269B CN 105525269 B CN105525269 B CN 105525269B CN 201610087812 A CN201610087812 A CN 201610087812A CN 105525269 B CN105525269 B CN 105525269B
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- CN
- China
- Prior art keywords
- shutter
- magnetron sputtering
- sputtering apparatus
- target
- bulge
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of magnetron sputtering apparatus, designs the production field of display base plate.Wherein, magnetron sputtering apparatus includes sputtering chamber and is arranged in the indoor target of the sputtering chamber and shutter, and the first surface of the shutter towards the target is provided with multiple groove structures.Scheme using the present invention, in carrying out magnetron sputtering process, target particle is after the plate that is blocked blocks, it is deposited at groove structure, therefore understand some stress concentration to discharge in groove structure, to share the stress for blocking plate surface, being born at edge, the curved edge amount of deflection of shutter is made to reduce, avoids occurring to tilt phenomenon.In addition, groove structure also further increases the specific surface area of shutter, more target particles can be deposited, to extend the replacement cycle of shutter, and then improve the mobility of magnetron sputtering apparatus entirety.
Description
Technical field
The present invention relates to the production fields of display base plate, particularly relate to a kind of magnetron sputtering apparatus.
Background technology
Magnetron sputtering refers to (usually being installed by the substrate installation of substrate for film deposition with anode in cathode (being usually target)
Seat or plated film cavity wall) between plus a quadrature field and electric field, carry out vacuum coating sputter chamber in be filled with required for
Inert gas (be usually argon gas).Make argon gas ionize to form argon ion (positively charged) and electronics, argon ion exist by electric power
Accelerate bombardment target under the action of driving electric field, sputter a large amount of target particle, these target particles (particle or molecule) are heavy
Product forms a film on by substrate for film deposition.
In the prior art, it is needed in the sputtering chamber of magnetron sputtering apparatus using shutter come to the target grain sputtered
Son is blocked, and target Particle diffusion is prevented.After long-term use, the surface deposition targets particle on shutter is more and more,
Gradually form membranaceous figure layer so that the stress for blocking plate surface is increasing.Under the stress, shutter is very easy to hair
Change shape.Especially in large-sized equipment for being carried out magnetic sputtering by substrate for film deposition, due to sputtering chamber bigger, needing to be permitted
Multiple shutters are spliced, and the edge flexural deformation amount of deflection of each shutter is maximum, therefore are easy to happen in stitching portion
Cracking.
In view of this, currently needing a kind of technical solution that can reduce shutter curved edge amount of deflection.
Invention content
The invention aims to solve the shutter of magnetron sputtering apparatus to deposit certain target particle after, edge is easy
The problem of answering stress to bend.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of magnetron sputtering apparatus, including sputtering chamber and
It is arranged in the indoor target of the sputtering chamber and shutter, which is characterized in that first table of the shutter towards the target
Face is provided with multiple groove structures.
Optionally, the side wall of the groove structure and the interconnecting piece of bottom surface are arc-shaped.
Optionally, the first surface of the shutter is additionally provided with bulge-structure.
Optionally, the bulge-structure and the groove structure are multiple, and the bulge-structure and the groove structure exist
Row to the first surface of the shutter is alternately distributed on longitudinal direction.
Optionally, the side wall of the bulge-structure is connected with the side wall of the groove structure.
Optionally, the rounded rectangle in the bottom surface of the groove structure.
Optionally, the first surface of the shutter has doped with the first surface of particulate matter or the shutter
Stupefied line.
Optionally, the bulge-structure is the cone that top is circular flat.
Optionally, the bulge-structure is the bulge shape of smooth surface.
Optionally, the shutter is the side wall of the sputtering chamber.
Optionally, the fixed module for placing substrate, the shutter are arranged between the target and fixed module,
The shutter has a void region, and first surface is towards the target.
Wherein, the particle of the target can pass through the void region, be deposited on substrate under magnetron sputtering effect
In specified coating film area.
The above-mentioned technical proposal of the present invention has the beneficial effect that：
Scheme using the present invention, the target particle generated in magnetron sputtering process are deposited on after the plate that is blocked blocks
At groove structure, therefore understand some stress concentration and discharged in groove structure, plate surface, edge are blocked to share
The stress born makes the curved edge amount of deflection of shutter reduce, and avoids occurring to tilt phenomenon.In addition, groove structure is also into one
Step increases the specific surface area of shutter, can deposit more target particles, to extend the replacement cycle of shutter, in turn
Improve the mobility of magnetron sputtering apparatus entirety.
Description of the drawings
Fig. 1 is the structural schematic diagram of the magnetron sputtering apparatus of the present invention；
Fig. 2-Fig. 4 is the structural schematic diagram of the shutter of the magnetron sputtering apparatus of the present invention.
Specific implementation mode
To keep the technical problem to be solved in the present invention, technical solution and advantage clearer, below in conjunction with attached drawing and tool
Body embodiment is described in detail.
For magnetron sputtering apparatus in the prior art shutter deposition sputter waste after, marginal position is answering masterpiece
The problem of warpage/rupture is susceptible under, the present invention provides a solution.
On the one hand, the embodiment of the present invention provides a kind of magnetron sputtering apparatus, including sputtering chamber 1 and setting in sputtering chamber
Target 2 in room 1 and shutter 31,32.Wherein, shutter 31 is the side wall of sputtering chamber, when shutter 32 is magnetron sputtering
Used mask plate.
Further include the fixed module 5 for being useful for placing substrate 4 in sputtering chamber 1, the setting of mask plate 32 is in target 2 and is somebody's turn to do
Between fixed module 5, and there is void region (in Fig. 1 at dotted line).The void region region face to be coated with substrate 4 is set
It sets.Under electric field action, ion pair target 2 is bombarded, and target 2 is made to sputter a large amount of target particle 21.Target particle 21
It eventually by the void region of mask plate 32, is deposited in the coating film area specified on substrate 4, forms film 41.
Wherein, the first surface of shutter 31,32 towards target 2 is provided with multiple groove structure A.Carrying out magnetron sputtering
In the process, target particle 21 is deposited on after the plate 31,32 that is blocked blocks at groove structure A, therefore understands some stress collection
In discharged in groove structure A, to share shutter 31,32 surfaces, the stress born at edge, make shutter 31,
32 curved edge amount of deflection reduces, and avoids occurring to tilt phenomenon.In addition, groove structure A also further increases shutter 31,32
Specific surface area can deposit more target particles 21, to extend the replacement cycle of shutter 31,32, and then improve
The mobility of magnetron sputtering apparatus entirety.
It needs exist for being described, the being given for example only property of magnetron sputtering apparatus structure shown in FIG. 1 of the present embodiment
It introduces, in the actual environment, substrate, mask plate and plank can also be vertical placement, no longer carry out citing herein and repeat.
Further, corner angle should be avoided to occur as possible inside groove structure, because corner angle are easy to be broken in the case where stress is used as.
Therefore preferably, in the present embodiment, the side wall of groove structure and the interconnecting piece of bottom surface are arc-shaped.In addition, being into one
Step avoids shutter from being broken, and the present embodiment makes shutter using the material with certain plasticity.Wherein make material
Material is preferably aluminum or aluminum alloy, can further decrease the overall weight of shutter, personnel easy to operation are in magnetron sputtering apparatus
On shutter is replaced.
In addition, in order to avoid the waste for blocking plate surface deposition is fallen off, on the first surface of the present embodiment shutter
It is also provided with bulge-structure.In sputtering process, target particle can form membranaceous figure layer on shutter, therefore can lead to
The bulge-structure is crossed " to hang over " on the first surface of shutter.Meanwhile the first surface of the present embodiment shutter can also adulterate
There is particulate matter, or there is stupefied line, the degree of roughness of first surface can be increased, prevent from being deposited on the target particle on shutter
It slides.
In practical applications, the particulate matter of the present embodiment either stupefied line can be formed in shutter manufacturing process or
The figure layer for providing particulate matter or stupefied line can also be further processed on the first surface for the shutter made.
With reference to several realization methods, describe in detail to the covering plate of the magnetron sputtering apparatus of embodiment.
Realization method one
As shown in Fig. 2, the first surface of the shutter of this realization method one towards target be provided with multiple groove structure A and
Multiple bulge-structure B.Groove structure A and bulge-structure B be expert to or longitudinal direction on be alternately distributed.
Wherein, the bulge-structure B of this realization method one is the bulge shape of smooth surface, the side of side wall and groove structure A
Wall is connected, in the continuous wavy shaped configuration of upper presentation of the first surface of shutter.
In addition, the bottom surface of groove structure A is preferably rectangular, the design of the rectangular bottom surface can be effectively increased groove structure A
Volume, to accommodate more target particles, to extend the replacement cycle of shutter.The bottom surface of groove structure A and side wall simultaneously
Interconnecting piece it is arc-shaped, avoid corner angle from occurring.
As it can be seen that in this realization method one, groove structure and bulge-structure link up smoothly between each other without corner angle,
Segment difference i.e. on the entire first surface of shutter is to be less likely to occur to crack under stress by surface blending.
Realization method two
As shown in figure 3, the first surface of the shutter of this realization method two towards target be provided with multiple groove structure A and
Multiple bulge-structure B.It is the boundary position of groove structure A and bulge-structure B, the side of groove structure A at lateral dotted line in Fig. 3
The side wall of wall and bulge-structure B is mutually linked.
With further reference to Fig. 4, unlike realization method one, groove structure A and protrusion in this realization method two are tied
Structure B be expert to and longitudinal direction on be alternately distributed, formed similar to checkerboard type arrangement.In addition, it is round that bulge-structure B, which is top,
The cone of plane, the circular flat are to increase the effective area of deposition targets particle, and cone is in order to avoid occurring
Corner angle.
Compared to realization method one, the top surface of two groove structure of this realization method and bulge-structure being capable of deposition targets
Particle, therefore there is higher effective depositional area so that the replacement cycle of shutter is extended.
In conclusion being based on above-mentioned realization method one and realization method two, the present embodiment has the advantages that following several：
1. the design of groove makes inside part surface stress transfer to shutter, reduce stress suffered by shutter edge,
The deformation deflection at edge is set to reduce.
2. the design of groove can deposit more target particles, the service life of shutter is extended, and then is improved
The mobility of magnetron sputtering apparatus entirety.
3. the design of groove alleviates shutter weight, the installation workload of shutter is made to reduce, is conducive to improve work
Efficiency and safety.
4. the present embodiment only improves the first surface of shutter, there is no set conventional magnetron spatter film forming
Standby agent structure is improved, therefore the implementation cost of scheme is low, has very high practicability and applicability.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principles of the present invention, it can also make several improvements and retouch, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (9)
1. a kind of magnetron sputtering apparatus, including sputtering chamber and setting are in the indoor target of the sputtering chamber and shutter, spy
Sign is that the first surface of the shutter towards the target is provided with multiple groove structures, the first table of the shutter
Face is additionally provided with bulge-structure, and the bulge-structure is the cone that top is circular flat.
2. magnetron sputtering apparatus according to claim 1, which is characterized in that
The side wall of the groove structure and the interconnecting piece of bottom surface are arc-shaped.
3. magnetron sputtering apparatus according to claim 1, which is characterized in that
The bulge-structure and the groove structure be it is multiple, the bulge-structure and the groove structure be expert to on longitudinal direction
It is alternately distributed the first surface in the shutter.
4. magnetron sputtering apparatus according to claim 1, which is characterized in that
The side wall of the bulge-structure is connected with the side wall of the groove structure.
5. magnetron sputtering apparatus according to claim 1, which is characterized in that
The rounded rectangle in bottom surface of the groove structure.
6. magnetron sputtering apparatus according to claim 1, which is characterized in that
The first surface of the shutter has stupefied line doped with the first surface of particulate matter or the shutter.
7. magnetron sputtering apparatus according to claim 1, which is characterized in that
The bulge-structure is the bulge shape of smooth surface.
8. magnetron sputtering apparatus according to claim 1, which is characterized in that
The shutter is the side wall of the sputtering chamber.
9. magnetron sputtering apparatus according to claim 1, which is characterized in that further include：
Fixed module for placing substrate, the shutter are arranged between the target and fixed module, the shutter
With a void region, and first surface is towards the target；
Wherein, the particle of the target can pass through the void region under magnetron sputtering effect, be deposited on substrate and specify
Coating film area in.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610087812.3A CN105525269B (en) | 2016-02-16 | 2016-02-16 | A kind of magnetron sputtering apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610087812.3A CN105525269B (en) | 2016-02-16 | 2016-02-16 | A kind of magnetron sputtering apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105525269A CN105525269A (en) | 2016-04-27 |
| CN105525269B true CN105525269B (en) | 2018-10-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610087812.3A Expired - Fee Related CN105525269B (en) | 2016-02-16 | 2016-02-16 | A kind of magnetron sputtering apparatus |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107058960B (en) * | 2016-12-30 | 2019-04-30 | 武汉华星光电技术有限公司 | A kind of sputter |
| CN114047215B (en) * | 2021-10-20 | 2023-08-15 | 北京科技大学顺德研究生院 | Device and method for eliminating uneven charge on surface of sample to be measured |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201400713Y (en) * | 2009-03-06 | 2010-02-10 | 中国南玻集团股份有限公司 | Baffle plate structure of vacuum coating |
| CN201729871U (en) * | 2010-06-17 | 2011-02-02 | 北京清华阳光能源开发有限责任公司 | Shielding device of magnetically-controlled sputtering target |
| CN201962346U (en) * | 2010-11-09 | 2011-09-07 | 宁波江丰电子材料有限公司 | Anti-adhesion plate structure for vacuum sputtering |
| CN102069359B (en) * | 2011-01-04 | 2012-12-19 | 宁波江丰电子材料有限公司 | Method for processing defensive move plate structure |
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| CN105525269A (en) | 2016-04-27 |
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