CN105514194A - 太阳电池模块及其制备方法 - Google Patents
太阳电池模块及其制备方法 Download PDFInfo
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- CN105514194A CN105514194A CN201510645050.XA CN201510645050A CN105514194A CN 105514194 A CN105514194 A CN 105514194A CN 201510645050 A CN201510645050 A CN 201510645050A CN 105514194 A CN105514194 A CN 105514194A
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- 238000000034 method Methods 0.000 title abstract description 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000005452 bending Methods 0.000 claims abstract description 28
- 238000002360 preparation method Methods 0.000 claims description 21
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- 239000000945 filler Substances 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 9
- 238000003475 lamination Methods 0.000 claims description 8
- 239000005341 toughened glass Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 3
- 229910001174 tin-lead alloy Inorganic materials 0.000 claims description 3
- 229910001316 Ag alloy Inorganic materials 0.000 claims 2
- OLXNZDBHNLWCNK-UHFFFAOYSA-N [Pb].[Sn].[Ag] Chemical compound [Pb].[Sn].[Ag] OLXNZDBHNLWCNK-UHFFFAOYSA-N 0.000 claims 2
- 239000011521 glass Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 11
- 239000011669 selenium Substances 0.000 description 6
- 239000005864 Sulphur Substances 0.000 description 4
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910020816 Sn Pb Inorganic materials 0.000 description 3
- 229910020922 Sn-Pb Inorganic materials 0.000 description 3
- 229910008783 Sn—Pb Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- AYYDQAPGXGQRJP-UHFFFAOYSA-L [H]O[Zn]S Chemical compound [H]O[Zn]S AYYDQAPGXGQRJP-UHFFFAOYSA-L 0.000 description 1
- VXBQWHONIUDFBB-UHFFFAOYSA-M [In+]=S.[OH-] Chemical compound [In+]=S.[OH-] VXBQWHONIUDFBB-UHFFFAOYSA-M 0.000 description 1
- ZYQNKFKPTUYGMQ-UHFFFAOYSA-N [In]=[Se].[Zn] Chemical compound [In]=[Se].[Zn] ZYQNKFKPTUYGMQ-UHFFFAOYSA-N 0.000 description 1
- VXHLJOXNEJYXQP-UHFFFAOYSA-N [O-2].[Zn+2].[SeH2] Chemical compound [O-2].[Zn+2].[SeH2] VXHLJOXNEJYXQP-UHFFFAOYSA-N 0.000 description 1
- MTCBSBWAJGPHEJ-UHFFFAOYSA-N [Se].[In]=S Chemical compound [Se].[In]=S MTCBSBWAJGPHEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229960004643 cupric oxide Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- IGUXCTSQIGAGSV-UHFFFAOYSA-K indium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[In+3] IGUXCTSQIGAGSV-UHFFFAOYSA-K 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
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- H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
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Abstract
本发明公开太阳电池模块及其制备方法、太阳能发电系统及互连带。本发明的太阳电池模块为由多个太阳电池单元通过互连带串联或并联而成的太阳能模块,上述互连带呈之字形,以降低由上述太阳电池模块的弯曲所产生的张力。
Description
技术领域
本发明涉及太阳电池模块及其制备方法。更详细地,涉及太阳电池模块及其制备方法,上述太阳电池模块及其制备方法的特征在于,形成用于使多个太阳电池单元相连的之字形互连带,以降低由太阳电池模块的弯曲所产生的张力(Tension)。
背景技术
太阳电池的作用是使太阳能转换为电能,上述太阳电池使用作为半导体材料的硅、砷化镓、碲化镉、硫化镉、磷化铟或它们的复合材料,而且一般使用硅材料。
上述太阳电池是借助扩散法来使半导体材料正负(positive-negative)接合而制备的,上述太阳电池单元利用受光时导通少量电流的光电效应(photovoltaiceffect),大部分普通的太阳电池由大面积的正负接合二极管形成,当在上述正负接合二极管的两极端产生的电动势与外部电路相连接时,上述太阳电池单元行使单位太阳电池、电池单位的作用。
按照如上所述的方式构成的电池单位,由于其电动势较低,因此,通过使多个电池单元相连接而构成具有适当电动势的太阳电池模块(PhotovoltaicModule)后使用。
在太阳电池模块的本体配置有多个电池单元,并且由包覆有铅的互连带(InterconnectionRibbon)使上述电池单元相连接。最终,互连带与总线带串联或并联,上述互连带与上下配置的电池单元相连接,上述总线带与外部端子相连接。在这种太阳电池模块中,通过使用互连带使太阳电池单元与总线带相连接来实现模块化的热粘合工艺称为标移(tabbing)。
根据现有的技术,在弯曲太阳电池模块时,随着在上述互连带中产生张力(Tension),会导致上述互连带和电池单元之间的接触部分分离的问题。
为了改善如上所述的问题,实际上需要具有如下特征的太阳电池模块及其制备方法,即,形成用于使多个太阳电池单元相连的之字形互连带,以降低由太阳电池模块的弯曲所产生的张力(Tension)。相关技术有韩国公开特许第10-2014-0105635号。
发明内容
本发明的目的在于解决上述问题,本发明可通过形成用于使多个太阳电池单元相连的之字形互连带,可降低由太阳电池模块的弯曲所产生的张力。
用于实现上述目的的本发明的太阳电池模块,由多个太阳电池单元通过互连带串联或并联,上述互连带呈之字形(Zigzag),以降低由上述太阳电池模块的弯曲所产生的张力(Tension)。
此时,上述互连带的长度可以与如下的最小曲率半径成反比:上述最小曲率半径为在上述太阳电池模块能够以最大程度弯曲的状态下的半径。
此时,用于使上述多个太阳电池单元中的第一太阳电池单元和第二太阳电池单元之间相连接的第一互连带的长度与用于使上述多个太阳电池单元中的第二太阳电池单元和第三太阳电池单元之间相连接的第二互连带的长度可不相同。
此时,上述互连带可由包覆有含铅(Pb)合金的的铜(Cu)电极构成。
此时,上述含铅(Pb)合金可为锡-铅合金(Sn-Pb)或锡-铅-银(Sn-Pb-Ag)合金。
此时,上述太阳电池单元可包含柔性(Flexible)材质的基板。
并且,用于实现上述目的的本发明的太阳电池模块的制备方法,上述太阳电池模块由多个太阳电池单元通过互连带串联或并联而成,上述太阳电池模块的制备方法包括:在形成于太阳电池单元的母线(busbar)上标移(tabbing)互连带,上述互连带呈之字形(Zigzag),以降低由上述太阳电池模块的弯曲所产生的张力(Tension)的步骤;利用附着于上述母线的互连带,使太阳电池单元相互接合,从而使太阳电池单元相连的步骤;依次层叠强化玻璃、填料板(EVASheet)、已连接的上述太阳电池单元、填料板及背板(BackSheet)之后执行层压(lamination)的步骤;以及接入上述太阳电池模块的端子的步骤。
此时,上述互连带的长度可以与如下的最小曲率半径成反比:上述最小曲率半径为在上述太阳电池模块能够以最大程度弯曲的状态下的半径。
此时,用于使上述多个太阳电池单元中的第一太阳电池单元和第二太阳电池单元之间相连接的互连带的长度与用于使上述多个太阳电池单元中的第二太阳电池单元和第三太阳电池单元之间相连接的第二互连带的长度可不相同。
此时,上述互连带由包覆有含铅(Pb)合金的铜(Cu)电极构成。
此时,上述含铅(Pb)合金可为锡-铅(Sn-Pb)合金或锡-铅-银(Sn-Pb-Ag)合金。
并且,用于实现上述目的的本发明的太阳能发电系统包括太阳电池模块,上述太阳电池模块由多个太阳电池单元通过互连带串联或并联,上述互连带呈之字形,以降低由太阳电池单元的弯曲所产生的张力。
并且,用于实现上述目的的本发明的互连带,用于执行多个太阳电池单元间的串联或并联,上述互连带呈之字形,以降低由太阳能模块的弯曲所产生的张力,上述太阳能模块由多个太阳电池单元相连而成。
此时,上述互连带的长度可以与如下的最小曲率半径成反比:上述最小曲率半径为在上述太阳电池模块能够以最大程度弯曲的状态下的半径。
根据本发明,本发明具有如下效果,通过形成用于使多个太阳电池单元相连的之字形互连带,可降低由太阳能模块的弯曲所产生的张力。
附图说明
图1为示出太阳电池单元借助现有互连带相连的状态的主视图。
图2为示出太阳电池单元借助现有互连带相连的状态的俯视图。
图3为借助现有互连带形成的太阳电池模块的俯视图。
图4为借助现有互连带形成的太阳电池模块的主视图。
图5为示出借助现有互连带形成的太阳电池模块中所存在的问题的图。
图6为示出太阳电池单元借助本发明的互连带相连的状态的主视图。
图7为本发明的太阳电池模块的主视图。
图8为用于说明本发明的太阳电池模块效果的图。
图9为本发明的太阳电池模块的制备方法的流程图。
附图标记的说明
100:太阳电池模块10:基板
20:第一电极30:光吸收层
40:缓冲层50:透明电极
60:第二电极70:互连带
具体实施方式
参照附图对本发明进行如下详细的说明。其中,将省略重复说明、可使本发明的要旨产生不必要的混淆的公知功能及结构有关详细说明。
本发明的实施方式是为了向本发明所属技术领域的普通技术人员更加完整地说明本发明而提供的。因此,为了更加明确地进行说明,可放大图中要素的形状及大小等。
本发明公开互连带、包含上述互连带的太阳电池模块及其制备方法和太阳能发电系统,在上述太阳电池模块中,至少两个太阳电池单元通过互连带和总线带串联或并联,上述互连带呈之字形,以降低由太阳电池模块的弯曲所产生的张力。
以下,参照附图对与本发明相对应的现有技术进行具体地说明。
图1为示出太阳电池单元借助现有互连带相连的状态的主视图。图2为示出太阳电池单元借助现有互连带相连的状态的俯视图。图3为借助现有互连带形成的太阳电池模块的俯视图。图4为借助现有互连带形成的太阳电池模块的主视图。图5为示出借助现有互连带形成的太阳电池模块中所存在的问题的图。
参照图1,一般情况下,单位太阳电池单元可包括:基板1、第一电极2、光吸收层3、缓冲层4、透明电极5、第二电极6。为了使一个单位太阳电池单元和另一个太阳电池单元相连,使用互连带7。
在参照图1及图2时,太阳电池单元通过上述互连带7相连接,如图3及图4所示,随着执行层压(lamination),形成太阳电池模块。
参照图5,在弯曲上述太阳电池模块时,由于现有的互连带受到张力,因此,会引起连接部分T分离的问题。
以下,参照附图对本发明进行具体地说明。
图6为示出太阳电池单元借助本发明的互连带相连的状态的主视图。图7为本发明的太阳电池模块的主视图。图8为用于说明本发明的太阳电池模块效果的图。图9为本发明的太阳电池模块的制备方法的流程图。
参照图6可知,本发明的互连带70呈之字形,以降低由太阳电池模块的弯曲所产生的张力。
如上所述,用于构成太阳电池模块的太阳电池单元可包括:基板10、第一电极20、光吸收层30、缓冲层40、透明电极50、第二电极60。此时,上述基板10可为柔性(flexible)的基板。
作为有关太阳电池单元结构的具体说明,上述第一电极20可为镍、铜、钼中的一种。
并且,上述光吸收层30可为选自由铜-铟-硒(Cu-In-Se)、铜-铟-硫(Cu-In-S)、铜-镓-硫(Cu-Ga-S)、铜-镓-硒(Cu-Ga-Se)、铜-铟-镓-硒(Cu-In-GA-Se)、铜-铟-镓-硒(硫,硒)(CU-In-Ga-Se(S,Se))、铜-铟-铝-镓-(硫,硒)(Cu-In-Ai-Ga-(S,Se))及铜-铟-铝-镓-硒-硫(Cu-In-Al-Ga-Se-S)的铜铟硒(CIS)/铜铟镓硒(CIGS)类化合物组成的组中的一种。
并且,上述缓冲层40可包含硫化镉(CdS)、硫化锌镉(CdZnS)、硫化锌(ZnS)、硫化氧化锌(Zn(S,O))、氢氧化硫化锌(Zn(OH,S))、硒化锌(ZnSe)、硫化铟硒(ZnInS)、硒化铟锌(ZnInSe)、氧化镁锌(ZnMgO)、硒化氢氧化锌(Zn(Se,OH))、氧化锡锌(ZnSnO)、氧化锌(ZnO)、硒化铟(InSe)、氢氧化铟(InOH)、氢氧化硫化铟(In(OH,S))、氢过氧化硫化铟(In(OOH,S))、硫化氧化铟(In(S,O))中的至少一种。
并且,上述第二电极60可包含氧化锌、氧化钾、氧化铝、氧化铟、氧化铅、氧化铜、氧化钛、氧化锡、氧化铁、二氧化锡、铟锡氧化物中的至少一种。
并且,上述互连带70可由包覆有含铅(Pb)合金的铜(Cu)电极构成,优选地,上述含铅(Pb)合金可为锡-铅(Sn-Pb)合金或锡-铅-银(Sn-Pb-Ag)合金。但是,上述实施例仅表示优选实施例,本发明不局限于上述例示。
参照图7,图7为本发明的太阳电池模块100。具体地,如上所述,太阳电池单元通过互连带相连接,依次层叠强化玻璃、填料板(EVASheet)、已连接的上述太阳电池单元、填料板及背板后,执行层压(lamination),从而生成太阳电池模块100,上述互连带呈之字形,以降低由太阳电池模块的弯曲所产生的张力。
一般情况下,太阳能发电系统包括:太阳电池单元、太阳电池模块、太阳能板、太阳电池串(array)、电力转换装置(PCS)及蓄电装置等。上述太阳电池模块起到将太阳能转换为电能的作用。在太阳电池模块中一般配置有多个太阳电池单元,太阳电池单元之间通过互连带相连,并且上述太阳电池模块包括玻璃、填料(EVA)及背板。
上述玻璃用于保护太阳电池单元免受外部的碰撞,上述玻璃可使用强化玻璃。玻璃可具有防水、绝缘及防紫外线的功能。玻璃的形状可为四角形、或者可根据设置环境或设计制备圆形等多种形状。
并且,在玻璃的下部面形成有保护膜。保护膜可使用防紫外线膜等,上述防紫外线膜有助于屏蔽经玻璃向太阳电池单元传递的紫外线等来延长太阳电池单元的使用寿命。然而,若玻璃本身具有充分的防紫外线功能,则可省略保护膜。
强化玻璃是通过如下方式制备的玻璃,即,以接近于软化温度的500℃至600℃的温度对成形板玻璃进行加热,并借助压缩的冷气使上述板玻璃骤冷,使玻璃表面压缩变形,使内部拉伸变形,从而形成强化玻璃,相比于普通玻璃,上述强化玻璃具有弯曲强度、耐冲击性及耐热性优秀的特征,从而保护太阳电池单元免受外部侵扰并有效透过太阳光。
填料是用于延长太阳电池模块寿命的必备材料,上述填料位于太阳电池单元的前后面,并起到可防止太阳电池单元的破损的缓冲材料的作用及通过粘结前面的玻璃和后面的背板起到封入太阳电池单元的作用。
背板105可使用氟树脂类的氟化物/聚对苯二甲酸乙二醇酯/氟化物(Tedlar/PET/Tedlar,TPT)及聚对苯二甲酸乙二醇酯(poly-ethyleneterephthalate,PET)类的合成树脂,上述背板起到防水、绝缘及防紫外线等功能。
参照图8对本发明的效果进行具体地说明,本发明具有如下效果,在本发明的太阳电池模块弯曲时,随着用于使太阳电池单元相连的互连带呈之字形,可降低太阳电池模块的弯曲所产生的张力。
作为实施例,上述互连带的长度可与如下的最小曲率半径成反比:上述最小曲率半径为在上述太阳电池模块能够以最大程度弯曲状态下的半径。
即,弯曲程度越大,之字形形态的互连带长度可越长。
并且,用于使上述多个太阳电池单元中的第一太阳电池单元和第二太阳电池单元之间相连接的第一互连带的长度与用于使上述多个太阳电池单元中的第二太阳电池单元和第三太阳电池单元之间相连接的第二互连带的长度可不相同。
具体地,继续参照图8,由使第一太阳电池单元和第二太阳电池单元相连的第一互连带所产生的张力T1大于由使第二太阳电池单元和第三太阳电池单元相连的第二互连带所产生的张力T2,因此,在这种情况下,上述第一互连带的长度可大于上述第二互连带的长度。
即,由多个互连带所产生的张力各不相同,因此,基于这种特点,相互不同的多个互连带的长度可各不相同。
参照图9,在本发明的太阳电池模块的制备方法中,上述太阳电池模块由多个太阳电池单元通过互连带串联或并联而成,上述太阳电池模块的制备方法包括以下步骤:
步骤S100,在形成于太阳电池单元的母线上标移(tabbing)互连带,上述互连带呈之字形,以降低由上述太阳电池模块的弯曲所产生的张力;
步骤S110,利用附着于上述母线的互连带,使太阳电池单元相互接合,从而使太阳电池单元相连;
步骤S120,依次层叠强化玻璃、填料板、已连接的上述太阳电池单元、填料板及背板后执行层压;
步骤S130,接入上述太阳电池模块的端子,并结束太阳电池模块的制备。
上述太阳电池模块的制备方法的太阳电池模块与上述本发明的太阳电池模块相同,因此,将省略对重复内容的说明。
如上所述,根据本发明的太阳电池模块及制备方法、互连带及太阳能发电系统,本发明具有如下优点,通过形成用于使多个太阳电池单元相连的之字形互连带,可降低由太阳能模块的弯曲所产生的张力,从而可防止互连带的分离。
如上所述,本发明不局限于如上所述的实施例的结构和方法,上述各实施例的整体或一部分也可相互组合,以实现上述实施例的多种变形。
Claims (14)
1.一种太阳电池模块,由多个太阳电池单元通过互连带串联或并联而成,其特征在于,
上述互连带呈之字形,以降低由上述太阳电池模块的弯曲所产生的张力。
2.根据权利要求1所述的太阳电池模块,其特征在于,上述互连带的长度与如下的最小曲率半径成反比:上述最小曲率半径为在上述太阳电池模块能够以最大程度弯曲的状态下的半径。
3.根据权利要求1所述的太阳电池模块,其特征在于,用于使上述多个太阳电池单元中的第一太阳电池单元和第二太阳电池单元之间相连接的第一互连带的长度与用于使上述多个太阳电池单元中的第二太阳电池单元和第三太阳电池单元之间相连接的第二互连带的长度不相同。
4.根据权利要求1所述的太阳电池模块,其特征在于,上述互连带由包覆有含铅合金的铜电极构成。
5.根据权利要求4所述的太阳电池模块,其特征在于,上述含铅合金为锡-铅合金或锡-铅-银合金。
6.根据权利要求1所述的太阳电池模块,其特征在于,上述太阳电池单元包含柔性材质的基板。
7.一种太阳电池模块的制备方法,上述太阳电池模块由多个太阳电池单元通过互连带串联或并联而成,上述太阳电池模块的制备方法的特征在于,包括:
在形成于太阳电池单元的母线上标移互连带的步骤,上述互连带呈之字形,以降低由上述太阳电池模块的弯曲所产生的张力;
利用附着于上述母线的互连带,使太阳电池单元相互接合,从而使太阳电池单元相连的步骤;
依次层叠强化玻璃、填料板、已连接的上述太阳电池单元、填料板及背板之后执行层压的步骤;以及
接入上述太阳电池模块的端子的步骤。
8.根据权利要求7所述的太阳电池模块的制备方法,其特征在于,上述互连带的长度与如下的最小曲率半径成反比:上述最小曲率半径为在上述太阳电池模块能够以最大程度弯曲的状态下的半径。
9.根据权利要求7所述的太阳电池模块的制备方法,其特征在于,用于使上述多个太阳电池单元中的第一太阳电池单元和第二太阳电池单元之间相连接的互连带的长度与用于使上述多个太阳电池单元中的第二太阳电池单元和第三太阳电池单元之间相连接的第二互连带的长度不相同。
10.根据权利要求7所述的太阳电池模块的制备方法,其特征在于,上述互连带由包覆有含铅合金的铜电极构成。
11.根据权利要求10所述的太阳电池模块的制备方法,其特征在于,上述含铅合金为锡-铅合金或锡-铅-银合金。
12.一种太阳能发电系统,其特征在于,包括权利要求1至6中任一项所述的太阳电池模块。
13.一种互连带,用于执行多个太阳电池单元间的串联或并联,上述互连带的特征在于,上述互连带呈之字形,以降低由太阳能模块的弯曲所产生的张力,上述太阳能模块由多个太阳电池单元相连而成。
14.根据权利要求13所述的互连带,其特征在于,上述互连带的长度与如下的最小曲率半径成反比:上述最小曲率半径为在上述太阳电池模块能够以最大程度弯曲的状态下的半径。
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CN109950351A (zh) * | 2019-03-19 | 2019-06-28 | 天津三安光电有限公司 | 一种可弯折柔性太阳电池及其制备方法 |
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